CN101724344A - Polishing liquid of silicon carbide substrate - Google Patents
Polishing liquid of silicon carbide substrate Download PDFInfo
- Publication number
- CN101724344A CN101724344A CN200810155745A CN200810155745A CN101724344A CN 101724344 A CN101724344 A CN 101724344A CN 200810155745 A CN200810155745 A CN 200810155745A CN 200810155745 A CN200810155745 A CN 200810155745A CN 101724344 A CN101724344 A CN 101724344A
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- Prior art keywords
- silicon carbide
- carbide substrate
- polishing
- polishing liquid
- silicon
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention relates to a formulation of a polishing liquid used for processing a silicon carbide substrate in the optoelectronic field. The polishing liquid of the silicon carbide substrate comprises sol silicon dioxide (SiO2) with the particle diameter of 20 nm to 50 nm, deionized water, sodium hydroxide (NaOH) and polyoxyethylene amide by the weight ratio of 1:2:0.01:0.06. By using the polishing liquid for polishing, a processing damaged layer produced in the process of grinding the silicon carbide substrate can be effectively removed, the roughness (RMS) of the polishing surface of the substrate is ensured to be less than 0.3 nm, the polishing time of the silicon carbide substrate is shortened and the production cost is reduced.
Description
Affiliated technical field
The present invention relates to the silicon carbide substrate surface working that optoelectronic areas uses.
Background technology
Silicon carbide (SiC) crystal is the important base mateiral of optoelectronic areas, and it is to produce the indispensable substrate material of GaN film.
Poor quality's silicon carbide substrate can not grown thereon and is satisfied the required GaN film of photodiode (LED).And the quality of silicon carbide substrate is guaranteed by the glossing of silicon carbide substrate, and the prescription of polishing fluid and quality are the key factors of the quality of finish of decision silicon carbide substrate.
Summary of the invention
The present invention proposes a kind of prescription of polishing fluid of new silicon carbide substrate, and the prescription of this polishing fluid not only can improve the quality of finish of silicon carbide substrate, and can reduce the tooling cost of silicon carbide substrate.
The silicon carbide substrate polishing fluid is formed: particle diameter is 20 nanometers～50 Nano sol type silicon-dioxide (SiO
2), deionized water, sodium hydroxide (NaOH), polyoxyethylate amide.Their mass ratio is: silicon-dioxide: deionized water: sodium hydroxide: polyoxyethylate amide=1: 2: 0.01: 0.06.
Silicon-dioxide is as polishing material, and it has lower hardness, adopts the silicon-dioxide of approximate spherical shapes, and smaller particles diameter (20 nanometers～50 nanometers) by chemically machinery polished, thereby obtains good glazed surface.Deionized water has higher purity.Sodium hydroxide is the adjustment that is used for polishing fluid pH value.Polyoxyethylate amide can make the long-time placement of silicon carbide substrate polishing fluid not precipitate as suspension agent.
The invention effect
The invention has the beneficial effects as follows: use this polishing fluid to polish, can effectively eliminate the machining damage layer that produces in the silicon carbide substrate grinding process, guarantee roughness (RMS)＜0.3 nanometer of substrate polished surface, use this polishing fluid can shorten the process period of silicon carbide substrate simultaneously, reduce production costs.
Claims (1)
1. the polishing fluid of silicon carbide substrate composition is: particle diameter is 20 nanometers～50 Nano sol type silicon-dioxide (SiO
2), deionized water, sodium hydroxide (NaOH), polyoxyethylate amide.Their mass ratio is: silicon-dioxide: deionized water: sodium hydroxide: polyoxyethylate amide=1: 2: 0.01: 0.06.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810155745A CN101724344A (en) | 2008-10-14 | 2008-10-14 | Polishing liquid of silicon carbide substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810155745A CN101724344A (en) | 2008-10-14 | 2008-10-14 | Polishing liquid of silicon carbide substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101724344A true CN101724344A (en) | 2010-06-09 |
Family
ID=42445925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810155745A Pending CN101724344A (en) | 2008-10-14 | 2008-10-14 | Polishing liquid of silicon carbide substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101724344A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8860040B2 (en) | 2012-09-11 | 2014-10-14 | Dow Corning Corporation | High voltage power semiconductor devices on SiC |
| US8940614B2 (en) | 2013-03-15 | 2015-01-27 | Dow Corning Corporation | SiC substrate with SiC epitaxial film |
| CN104312440A (en) * | 2014-10-28 | 2015-01-28 | 清华大学 | Chemical mechanical polishing composition |
| US9018639B2 (en) | 2012-10-26 | 2015-04-28 | Dow Corning Corporation | Flat SiC semiconductor substrate |
| US9017804B2 (en) | 2013-02-05 | 2015-04-28 | Dow Corning Corporation | Method to reduce dislocations in SiC crystal growth |
| US9279192B2 (en) | 2014-07-29 | 2016-03-08 | Dow Corning Corporation | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology |
| US9738991B2 (en) | 2013-02-05 | 2017-08-22 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion |
| US9797064B2 (en) | 2013-02-05 | 2017-10-24 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion |
| CN112029417A (en) * | 2020-09-30 | 2020-12-04 | 常州时创新材料有限公司 | Polishing composition for silicon carbide CMP and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1836842A (en) * | 2006-04-19 | 2006-09-27 | 山东大学 | Surface polishing method for major diameter high hardness 6H-SiC monocrystalline sheet |
| CN1947944A (en) * | 2006-08-11 | 2007-04-18 | 周海 | Technique for nanometer grade super smooth processing gallium phosphide wafer |
| CN101050338A (en) * | 2007-05-11 | 2007-10-10 | 江苏海迅实业有限公司 | Polishing fluid of Nano silicon dioxide grinding material in use for processing microcrystalline glass, and preparation method |
| CN101096577A (en) * | 2006-06-30 | 2008-01-02 | 天津晶岭电子材料科技有限公司 | Antifreeze polishing liquid and preparation method thereof |
-
2008
- 2008-10-14 CN CN200810155745A patent/CN101724344A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1836842A (en) * | 2006-04-19 | 2006-09-27 | 山东大学 | Surface polishing method for major diameter high hardness 6H-SiC monocrystalline sheet |
| CN101096577A (en) * | 2006-06-30 | 2008-01-02 | 天津晶岭电子材料科技有限公司 | Antifreeze polishing liquid and preparation method thereof |
| CN1947944A (en) * | 2006-08-11 | 2007-04-18 | 周海 | Technique for nanometer grade super smooth processing gallium phosphide wafer |
| CN101050338A (en) * | 2007-05-11 | 2007-10-10 | 江苏海迅实业有限公司 | Polishing fluid of Nano silicon dioxide grinding material in use for processing microcrystalline glass, and preparation method |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8860040B2 (en) | 2012-09-11 | 2014-10-14 | Dow Corning Corporation | High voltage power semiconductor devices on SiC |
| US9337277B2 (en) | 2012-09-11 | 2016-05-10 | Dow Corning Corporation | High voltage power semiconductor device on SiC |
| US9165779B2 (en) | 2012-10-26 | 2015-10-20 | Dow Corning Corporation | Flat SiC semiconductor substrate |
| US9018639B2 (en) | 2012-10-26 | 2015-04-28 | Dow Corning Corporation | Flat SiC semiconductor substrate |
| US9738991B2 (en) | 2013-02-05 | 2017-08-22 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion |
| US9017804B2 (en) | 2013-02-05 | 2015-04-28 | Dow Corning Corporation | Method to reduce dislocations in SiC crystal growth |
| US9797064B2 (en) | 2013-02-05 | 2017-10-24 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion |
| US8940614B2 (en) | 2013-03-15 | 2015-01-27 | Dow Corning Corporation | SiC substrate with SiC epitaxial film |
| US9279192B2 (en) | 2014-07-29 | 2016-03-08 | Dow Corning Corporation | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology |
| US10002760B2 (en) | 2014-07-29 | 2018-06-19 | Dow Silicones Corporation | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology |
| CN104312440B (en) * | 2014-10-28 | 2016-04-27 | 清华大学 | A kind of chemical-mechanical polishing compositions |
| CN104312440A (en) * | 2014-10-28 | 2015-01-28 | 清华大学 | Chemical mechanical polishing composition |
| CN112029417A (en) * | 2020-09-30 | 2020-12-04 | 常州时创新材料有限公司 | Polishing composition for silicon carbide CMP and preparation method thereof |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20100609 |