CN101724344A - Polishing liquid of silicon carbide substrate - Google Patents

Polishing liquid of silicon carbide substrate Download PDF

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Publication number
CN101724344A
CN101724344A CN 200810155745 CN200810155745A CN101724344A CN 101724344 A CN101724344 A CN 101724344A CN 200810155745 CN200810155745 CN 200810155745 CN 200810155745 A CN200810155745 A CN 200810155745A CN 101724344 A CN101724344 A CN 101724344A
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CN
China
Prior art keywords
silicon carbide
carbide substrate
polishing
polishing liquid
nm
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CN 200810155745
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Chinese (zh)
Inventor
周海
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周海
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Priority to CN 200810155745 priority Critical patent/CN101724344A/en
Publication of CN101724344A publication Critical patent/CN101724344A/en

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Abstract

The invention relates to a formulation of a polishing liquid used for processing a silicon carbide substrate in the optoelectronic field. The polishing liquid of the silicon carbide substrate comprises sol silicon dioxide (SiO2) with the particle diameter of 20 nm to 50 nm, deionized water, sodium hydroxide (NaOH) and polyoxyethylene amide by the weight ratio of 1:2:0.01:0.06. By using the polishing liquid for polishing, a processing damaged layer produced in the process of grinding the silicon carbide substrate can be effectively removed, the roughness (RMS) of the polishing surface of the substrate is ensured to be less than 0.3 nm, the polishing time of the silicon carbide substrate is shortened and the production cost is reduced.

Description

碳化硅基片的抛光液 The polishing liquid of the silicon carbide substrate

所属技术领域 Those of skill

[0001 ] 本发明涉及光电子领域使用的碳化硅基片表面加工。 [0001] The present invention relates to the surface of the silicon carbide substrate used in the field of optoelectronic processing.

背景技术 Background technique

[0002] 碳化硅(SiC)晶体是光电子领域重要的基础材料,它是生产GaN薄膜不可缺少的衬底材料。 [0002] The silicon carbide (SiC) crystal is an important base material optoelectronics, which is indispensable for the production of GaN thin film substrate material.

[0003] 质量不好的碳化硅基片,在其上长不出满足发光二极管(LED)所需的GaN薄膜。 [0003] The poor quality of the silicon carbide substrate in which a GaN thin film could not satisfy the long light emitting diode (LED) is required. 而碳化硅基片的质量由碳化硅基片的抛光工艺来保证,抛光液的配方和质量是决定碳化硅基片的抛光质量的关键因素。 And the quality of the silicon carbide substrate by a polishing process to ensure that the silicon carbide substrate, and the mass of the polishing liquid formulation is a critical factor in determining the quality of polishing of the silicon carbide substrate.

发明内容 SUMMARY

[0004] 本发明提出一种新的碳化硅基片的抛光液的配方,该抛光液的配方不仅能够提高碳化硅基片的抛光质量,而且能够降低碳化硅基片的加工成本。 [0004] The present invention provides a new formulation of the polishing liquid of the silicon carbide substrate, the polishing liquid formulation can not only improve the quality of polishing the silicon carbide substrate, and can reduce processing costs of the silicon carbide substrate.

[0005] 碳化硅基片抛光液组成是:颗粒直径为20纳米〜50纳米溶胶型二氧化硅(Si02), 去离子水,氢氧化钠(NaOH),聚氧乙烯酰胺。 [0005] The silicon carbide substrate polishing liquid composition was: particle diameter of 20 nm ~ 50 nanometers silica sol (Si02), deionized water, sodium hydroxide (NaOH), polyoxyethylene amides. 它们的质量比是:二氧化硅:去离子水:氢氧 A mass ratio is: Silica: deionized water: hydrogen

化钠:聚氧乙烯酰胺=i : 2 : o.oi : o.oe。 Sodium: polyoxyethylene amide = i: 2: o.oi: o.oe.

[0006] 二氧化硅作为抛光材料,它具有较低的硬度,采用近似球状外形的二氧化硅,较小 [0006] silica as a polishing material having a lower hardness, the shape of nearly spherical silica using smaller

的颗粒直径(20纳米〜50纳米),通过化学机械抛光,从而获得良好的抛光表面。 Particle diameter (20 nm ~ 50 nm), by chemical mechanical polishing to obtain a good polished surface. 去离子水具有较高的纯度。 Deionized water has a higher purity. 氢氧化钠是用于对抛光液PH值的调整。 Sodium hydroxide is used to adjust PH value of the polishing. 聚氧乙烯酰胺作为悬浮剂,能够 Polyoxyethylene amide as a suspending agent, can be

使得碳化硅基片抛光液长时间放置不沉淀。 So that the silicon carbide substrate is placed a polishing liquid for a long time does not precipitate.

[0007] 发明效果 [0007] Effect of the Invention

[0008] 本发明的有益效果是:使用本抛光液进行抛光,能够有效消除碳化硅基片磨削过程中产生的加工损伤层,保证基片抛光面的粗糙度(RMS) < 0. 3纳米,同时使用该抛光液能够縮短碳化硅基片的加工时间,降低生产成本。 [0008] Advantageous effects of the present invention are: polishing using the polishing liquid, can effectively eliminate the silicon carbide substrate processing damage layer produced in the grinding process, to ensure that the roughness of the polished surface of the substrate (RMS) <0. 3 nanometers while using the polishing liquid of the silicon carbide substrate can be shortened processing time and reduce production costs.

Claims (1)

  1. 碳化硅基片的抛光液组成是:颗粒直径为20纳米~50纳米溶胶型二氧化硅(SiO2),去离子水,氢氧化钠(NaOH),聚氧乙烯酰胺。 The polishing solution composition is the silicon carbide substrate: particle diameter of 20 nm to 50 nm silica sol (SiO2), deionized water, sodium hydroxide (NaOH), polyoxyethylene amides. 它们的质量比是:二氧化硅∶去离子水∶氢氧化钠∶聚氧乙烯酰胺=1∶2∶0.01∶0.06。 A mass ratio is: Silica: deionized water: NaOH: = 1:2:0.01:0.06 polyoxyethylene amide.
CN 200810155745 2008-10-14 2008-10-14 Polishing liquid of silicon carbide substrate CN101724344A (en)

Priority Applications (1)

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CN101724344A true CN101724344A (en) 2010-06-09

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
CN104312440A (en) * 2014-10-28 2015-01-28 清华大学 Chemical mechanical polishing composition
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1836842A (en) * 2006-04-19 2006-09-27 山东大学 Surface polishing method for major diameter high hardness 6H-SiC monocrystalline sheet
CN1947944A (en) * 2006-08-11 2007-04-18 周海 Technique for nanometer grade super smooth processing gallium phosphide wafer
CN101050338A (en) * 2007-05-11 2007-10-10 江苏海迅实业有限公司 Polishing fluid of Nano silicon dioxide grinding material in use for processing microcrystalline glass, and preparation method
CN101096577A (en) * 2006-06-30 2008-01-02 天津晶岭电子材料科技有限公司 Antifreeze polishing liquid and preparation method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1836842A (en) * 2006-04-19 2006-09-27 山东大学 Surface polishing method for major diameter high hardness 6H-SiC monocrystalline sheet
CN101096577A (en) * 2006-06-30 2008-01-02 天津晶岭电子材料科技有限公司 Antifreeze polishing liquid and preparation method thereof
CN1947944A (en) * 2006-08-11 2007-04-18 周海 Technique for nanometer grade super smooth processing gallium phosphide wafer
CN101050338A (en) * 2007-05-11 2007-10-10 江苏海迅实业有限公司 Polishing fluid of Nano silicon dioxide grinding material in use for processing microcrystalline glass, and preparation method

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9337277B2 (en) 2012-09-11 2016-05-10 Dow Corning Corporation High voltage power semiconductor device on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9165779B2 (en) 2012-10-26 2015-10-20 Dow Corning Corporation Flat SiC semiconductor substrate
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
US10002760B2 (en) 2014-07-29 2018-06-19 Dow Silicones Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
CN104312440B (en) * 2014-10-28 2016-04-27 清华大学 A kind of chemical-mechanical polishing compositions
CN104312440A (en) * 2014-10-28 2015-01-28 清华大学 Chemical mechanical polishing composition

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