CN101717569A - Polyarylether nitrile / dissaving phthalocyanine copper dielectric film and preparation method thereof - Google Patents
Polyarylether nitrile / dissaving phthalocyanine copper dielectric film and preparation method thereof Download PDFInfo
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- CN101717569A CN101717569A CN200910310566A CN200910310566A CN101717569A CN 101717569 A CN101717569 A CN 101717569A CN 200910310566 A CN200910310566 A CN 200910310566A CN 200910310566 A CN200910310566 A CN 200910310566A CN 101717569 A CN101717569 A CN 101717569A
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- Prior art keywords
- dissaving
- nitrile
- phthalocyanine copper
- phthalonitrile
- dielectric film
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- VVOPUZNLRVJDJQ-UHFFFAOYSA-N phthalocyanine copper Chemical compound [Cu].C12=CC=CC=C2C(N=C2NC(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2N1 VVOPUZNLRVJDJQ-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 150000002825 nitriles Chemical class 0.000 title claims abstract description 27
- 229920000090 poly(aryl ether) Polymers 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 229910021591 Copper(I) chloride Inorganic materials 0.000 claims abstract description 24
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 claims abstract description 24
- 229940045803 cuprous chloride Drugs 0.000 claims abstract description 24
- 229920006391 phthalonitrile polymer Polymers 0.000 claims abstract description 24
- -1 poly (arylene ether nitrile Chemical class 0.000 claims description 16
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical group CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 15
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 15
- 239000002994 raw material Substances 0.000 claims description 11
- 238000010792 warming Methods 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 4
- 238000005303 weighing Methods 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 abstract description 4
- 239000003989 dielectric material Substances 0.000 abstract description 3
- 238000002156 mixing Methods 0.000 abstract description 3
- XQZYPMVTSDWCCE-UHFFFAOYSA-N phthalonitrile Chemical compound N#CC1=CC=CC=C1C#N XQZYPMVTSDWCCE-UHFFFAOYSA-N 0.000 abstract 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 29
- 239000005357 flat glass Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 3
- 239000013557 residual solvent Substances 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 238000007669 thermal treatment Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000012764 mineral filler Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention belongs to the field of high polymer dielectric material, in particular to a polyarylether nitrile / dissaving phthalocyanine copper dielectric film and a preparation method thereof. The polyarylether nitrile / dissaving phthalocyanine copper dielectric film of the invention is acquired by forming film after mixing polyarylether nitrile, bis phthalonitrile and cuprous chloride. The weight ratio between the sum of the weight of the bis phthalonitrile and cuprous chloride and the weight of the polyarylether nitrile is 10 to 40: 60 to 90. The mole ratio of the bis phthalonitrile and the cuprous chloride is 2.5 to 3.5: 0.5 to 1.5. The polyarylether nitrile / dissaving phthalocyanine copper dielectric film of the invention is uniform and compact, has excellent dielectric property and mechanical property, and solves the problems of the prior art that the dielectric loss is high and the mechanical property of the film is decreased due to over-high padding.
Description
Technical field
The invention belongs to polymer dielectric material field, particularly a kind of polyarylether nitrile/dissaving phthalocyanine copper dielectric film and preparation method thereof.
Background technology
The high energy storage capacitor film that is applied in the particular surroundings requires dielectric substance should possess high mechanical property and resistance toheat when possessing high dielectric property, and traditional inorganic dielectric substance has possessed very high specific inductivity but mechanical property is too poor.In the last few years, the material that metal phthalocyanine (as CuPc) and derivative and polyaniline oligomer etc. contain conjugated structure often is used to prepare high dielectric material, though they have higher dielectric constant, but its dielectric loss is also higher, and the higher molecular material is difficult to processing, is difficult for preparing big area, high dielectric thin film that kindliness is good.
Combining preparation polymer-based metal phthalocyanine composite membrane with polymer phase is one of main means that overcome these shortcomings, the method of above-claimed cpd by grafting, blend is incorporated in the polymeric system, because thereby polymeric matrix forms the dielectric loss that insulation material layer can reduce packing material greatly, but have higher dielectric constant equally, be easy to advantages such as processing, excellent mechanical property, thermal property but also possessed macromolecular material.
The preparation method of polyarylether nitrile/dissaving phthalocyanine copper dielectric film prepares dissaving phthalocyanine copper earlier in the prior art, then dissaving phthalocyanine copper is mixed with poly (arylene ether nitrile).Wherein, 200 ℃ of reactions in the N-Methyl pyrrolidone solvent generated dissaving phthalocyanine copper in 2～6 hours by bi-phthalonitrile and cuprous chloride, and its synthetic route is as follows:
But the mechanical property of the polyarylether nitrile/dissaving phthalocyanine copper dielectric film that makes by aforesaid method is often relatively poor, and the loading level that will reach high specific inductivity mineral filler will be very high, make that the dielectric loss of matrix material is very high, processing characteristics also can descend.
Summary of the invention
First technical problem that the present invention will solve provides a kind of high strength, low-loss polyarylether nitrile/dissaving phthalocyanine copper dielectric film.
Polyarylether nitrile/dissaving phthalocyanine copper dielectric film of the present invention is to be obtained by film forming after poly (arylene ether nitrile), bi-phthalonitrile and the cuprous chloride blend.
Further, the weight sum of bi-phthalonitrile and cuprous chloride and the weight ratio of poly (arylene ether nitrile) are 10～40: 60～90, and the mol ratio of bi-phthalonitrile and cuprous chloride is 2.5～3.5: 0.5～1.5.
Optimum, the weight sum of bi-phthalonitrile and cuprous chloride and the weight ratio of poly (arylene ether nitrile) are 10～40: 60～90, the mol ratio of bi-phthalonitrile and cuprous chloride is 3: the 1 o'clock dielectric film better performances of making.
Solvent is a N-Methyl pyrrolidone during blend, and the weight ratio of N-Methyl pyrrolidone and three kinds of raw material gross weights is 85～95: 5～15, is preferably 90: 10.
Second technical problem that the present invention will solve provides the preparation method of above-mentioned polyarylether nitrile/dissaving phthalocyanine copper dielectric film, and its step is as follows:
(1) take by weighing raw material according to following weight proportion: the weight sum of bi-phthalonitrile and cuprous chloride and the weight ratio of poly (arylene ether nitrile) are 10～40: 60～90, and wherein the mol ratio of bi-phthalonitrile and cuprous chloride is 2.5～3.5: 0.5～1.5; Three kinds of raw materials are dissolved in N-Methyl pyrrolidone, and the weight ratio of N-Methyl pyrrolidone and three kinds of raw material gross weights is 85～95: 5～15;
(2) solution film forming that makes of step (1) promptly.
Further, to be the solution that makes in 180～220 ℃ be poured on after refluxing 2～6 hours the described film forming of step (2) makes film on the flat board, flat board placed under 160～200 ℃ of temperature dried by the fire 4～6 hours, be warming up to 240～260 ℃ of bakings 1～4 hour then, be cooled to room temperature promptly.
Preferably, the mol ratio of step (1) bi-phthalonitrile and cuprous chloride is 3: 1.The weight ratio of N-Methyl pyrrolidone and three kinds of raw material gross weights is 90: 10.
Step (2) reflux temperature is 200 ℃; Flat board places under 160～200 ℃ of temperature and dried by the fire 4～6 hours, is warming up to 250 ℃ of bakings 1～4 hour then.
The present invention joins bi-phthalonitrile, cuprous chloride and poly (arylene ether nitrile) in the solvent simultaneously and reacts, in poly (arylene ether nitrile) solution, react the generation dissaving phthalocyanine copper by bi-phthalonitrile and cuprous chloride, dissaving phthalocyanine copper molecule and poly aromatic ether nitrile high molecular chain uniform mixing, original position is compound; Promptly water film dissaving phthalocyanine copper is dispersed in the poly (arylene ether nitrile) matrix, both improved the specific inductivity of polyarylether nitrile/dissaving phthalocyanine copper laminated film, also improved mechanical properties in films, also have very low dielectric loss simultaneously by in-situ blending.
Description of drawings
Fig. 1 is the section SEM of film in the embodiment of the invention 1.
Fig. 2 is an appearance of films photo in the embodiment of the invention 2.
Embodiment
Poly (arylene ether nitrile) of the present invention is provided by Sichuan Feiya New Materials Co., Ltd., and the preparation method is with reference to Chinese patent 200810305720.3.
Embodiment 1
12.68 gram poly (arylene ether nitrile)s, 1.31 gram bi-phthalonitriles, 0.01 gram cuprous chloride are dissolved in 140 milliliters of N-Methyl pyrrolidone together, solution steadily is poured on the clean sheet glass at 200 ℃ of backflow stirring reactions after 4 hours, make it into adhesion of film on sheet glass, with sheet glass lie in a horizontal plane in the baking oven 200 ℃ of vacuum conditions down baking 4 hours to remove residual solvent, be warming up to 250 ℃ of thermal treatments 2 hours then, slowly cool to room temperature at last and obtain the polyarylether nitrile/dissaving phthalocyanine copper laminated film, thickness is 0.05～0.1mm.The cross-section morphology of its film is seen Fig. 1, and dielectric properties (25 ℃ of probe temperatures, test frequency 100Hz) and mechanical property see Table 1:
The dielectric properties and the mechanical property of the dielectric film of table 1 embodiment 1 preparation
Embodiment 2
10.56 gram poly (arylene ether nitrile)s, 2.62 gram bi-phthalonitriles, 0.02 gram cuprous chloride are dissolved in 130 milliliters of N-Methyl pyrrolidone together, solution steadily is poured on the clean sheet glass at 200 ℃ of backflow stirring reactions after 4 hours, make it into adhesion of film on sheet glass, with sheet glass lie in a horizontal plane in the baking oven 200 ℃ of vacuum conditions down baking 4 hours to remove residual solvent, be warming up to 250 ℃ of thermal treatments 2 hours then, slowly cool to room temperature at last and obtain the polyarylether nitrile/dissaving phthalocyanine copper laminated film, thickness is 0.05～0.1mm.Its appearance of films pattern is seen Fig. 2, and dielectric properties (25 ℃ of probe temperatures, test frequency 100Hz) and mechanical property see Table 2:
The dielectric properties and the mechanical property of the dielectric film of table 2 embodiment 2 preparations
Embodiment 3
6.16 gram poly (arylene ether nitrile)s, 2.62 gram bi-phthalonitriles, 0.02 gram cuprous chloride are dissolved in N-Methyl pyrrolidone together, and wherein N-Methyl pyrrolidone is 85 milliliters.Solution steadily is poured on the clean sheet glass at 200 ℃ of backflow stirring reactions after 3 hours, make it into adhesion of film on sheet glass, with sheet glass lie in a horizontal plane in the baking oven 200 ℃ of vacuum conditions down baking 4 hours to remove residual solvent, be warming up to 250 ℃ of thermal treatments 2 hours then, slowly cool to room temperature at last and obtain the polyarylether nitrile/dissaving phthalocyanine copper laminated film, thickness is 0.05～0.1mm.Its dielectric properties (25 ℃ of probe temperatures, test frequency 100Hz) and mechanical property see Table 3:
The dielectric properties and the mechanical property of the dielectric film of table 3 embodiment 3 preparations
Claims (10)
1. polyarylether nitrile/dissaving phthalocyanine copper dielectric film, it is characterized in that: it is to be obtained by film forming after poly (arylene ether nitrile), bi-phthalonitrile and three kinds of raw material blend of cuprous chloride.
2. polyarylether nitrile/dissaving phthalocyanine copper dielectric film according to claim 1, it is characterized in that: the weight sum of bi-phthalonitrile and cuprous chloride and the weight ratio of poly (arylene ether nitrile) are 10～40: 60～90, and the mol ratio of bi-phthalonitrile and cuprous chloride is 2.5～3.5: 0.5～1.5.
3. polyarylether nitrile/dissaving phthalocyanine copper dielectric film according to claim 2 is characterized in that: the mol ratio of bi-phthalonitrile and cuprous chloride is 3: 1.
4. according to each described polyarylether nitrile/dissaving phthalocyanine copper dielectric film of claim 1～3, it is characterized in that: solvent is a N-Methyl pyrrolidone during blend.
5. polyarylether nitrile/dissaving phthalocyanine copper dielectric film according to claim 4 is characterized in that: the weight ratio of N-Methyl pyrrolidone and three kinds of raw material gross weights is 85～95: 5～15.
6. the preparation method of polyarylether nitrile/dissaving phthalocyanine copper dielectric film is characterized in that, step is as follows:
(1) take by weighing raw material according to following weight proportion: the weight sum of bi-phthalonitrile and cuprous chloride and the weight ratio of poly (arylene ether nitrile) are 10～40: 60～90, and wherein the mol ratio of bi-phthalonitrile and cuprous chloride is 2.5～3.5: 0.5～1.5; Three kinds of raw materials are dissolved in N-Methyl pyrrolidone, and the weight ratio of N-Methyl pyrrolidone and three kinds of raw material gross weights is 85～95: 5～15;
(2) solution film forming that makes of step (1) promptly.
7. the preparation method of polyarylether nitrile/dissaving phthalocyanine copper dielectric film according to claim 6, it is characterized in that: step (2) film is to be poured on after 180～220 ℃ of solution refluxed 2～6 hours to make film on the flat board, flat board is placed under 160～200 ℃ of vacuum conditions baking 4～6 hours, be warming up to 240～260 ℃ of bakings 1～4 hour then, be cooled to room temperature.
8. the preparation method of polyarylether nitrile/dissaving phthalocyanine copper dielectric film according to claim 7 is characterized in that: step (2) flat board placed under 160～200 ℃ of vacuum conditions baking 4～6 hours, was warming up to 250 ℃ of bakings 1～4 hour then.
9. according to the preparation method of claim 6 or 7 described polyarylether nitrile/dissaving phthalocyanine copper dielectric films, it is characterized in that: the mol ratio of step (1) bi-phthalonitrile and cuprous chloride is 3: 1.
10. according to the preparation method of claim 6 or 7 described polyarylether nitrile/dissaving phthalocyanine copper dielectric films, it is characterized in that: the weight ratio of step (1) N-Methyl pyrrolidone and three kinds of raw material gross weights is 90: 10.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101914278A (en) * | 2010-08-27 | 2010-12-15 | 绵阳鸿琪新材料科技有限公司 | Poly(arylene ether nitrile)/carbon nanotube thin film and preparation method thereof |
| CN101928452A (en) * | 2010-07-23 | 2010-12-29 | 电子科技大学 | Poly(arylene ether nitrile) and aluminum oxide composite insulating heat-conduction material and preparation method thereof |
| CN113388137A (en) * | 2021-05-21 | 2021-09-14 | 电子科技大学 | Preparation method of high-strength high-temperature-resistant poly (arylene ether nitrile) film |
| CN114806035A (en) * | 2022-05-09 | 2022-07-29 | 葛焕军 | Preparation method of POSS-copper phthalocyanine dielectric monomer modified polystyrene material |
-
2009
- 2009-11-27 CN CN2009103105663A patent/CN101717569B/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101928452A (en) * | 2010-07-23 | 2010-12-29 | 电子科技大学 | Poly(arylene ether nitrile) and aluminum oxide composite insulating heat-conduction material and preparation method thereof |
| CN101928452B (en) * | 2010-07-23 | 2012-04-25 | 电子科技大学 | Poly(arylene ether nitrile) and aluminum oxide composite insulating heat-conduction material and preparation method thereof |
| CN101914278A (en) * | 2010-08-27 | 2010-12-15 | 绵阳鸿琪新材料科技有限公司 | Poly(arylene ether nitrile)/carbon nanotube thin film and preparation method thereof |
| CN101914278B (en) * | 2010-08-27 | 2012-07-25 | 绵阳鸿琪新材料科技有限公司 | Poly(arylene ether nitrile)/carbon nanotube thin film and preparation method thereof |
| CN113388137A (en) * | 2021-05-21 | 2021-09-14 | 电子科技大学 | Preparation method of high-strength high-temperature-resistant poly (arylene ether nitrile) film |
| CN113388137B (en) * | 2021-05-21 | 2022-04-15 | 电子科技大学 | Preparation method of high-strength high-temperature-resistant poly (arylene ether nitrile) film |
| CN114806035A (en) * | 2022-05-09 | 2022-07-29 | 葛焕军 | Preparation method of POSS-copper phthalocyanine dielectric monomer modified polystyrene material |
| CN114806035B (en) * | 2022-05-09 | 2024-04-19 | 深圳市嘉凯勒实业有限公司 | Preparation method of POSS-copper phthalocyanine dielectric monomer modified polystyrene material |
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Denomination of invention: Polyarylether nitrile / dissaving phthalocyanine copper dielectric film and preparation method thereof Effective date of registration: 20150416 Granted publication date: 20110810 Pledgee: Sichuan Jintang financing Company limited by guarantee Pledgor: Sichuan Feiya New Materials Co., Ltd. Registration number: 2015510000013 |
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