CN101705381B - Method for producing gallium-magnesium alloy or indium-magnesium alloy - Google Patents
Method for producing gallium-magnesium alloy or indium-magnesium alloy Download PDFInfo
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- CN101705381B CN101705381B CN2009102327816A CN200910232781A CN101705381B CN 101705381 B CN101705381 B CN 101705381B CN 2009102327816 A CN2009102327816 A CN 2009102327816A CN 200910232781 A CN200910232781 A CN 200910232781A CN 101705381 B CN101705381 B CN 101705381B
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- magnesium alloy
- indium
- gallium
- magnesium
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Abstract
The invention discloses a method for producing a gallium-magnesium alloy or indium-magnesium alloy, which comprises the following steps: mixing metal gallium and magnesium or metal indium and magnesium in a certain ratio, and putting the mixture in graphite crucible; and loading the graphite crucible in a vacuum furnace, sealing the vacuum furnace, vacuumizing to lower than 10-4Mpa, stopping vacuumization, filling hydrogen, vacuumizing again (the vacuum degree is the same as the first vacuumization), filling hydrogen again for 10 to 30min, raising the temperature to between 500 and 700DEG C, melting the two metals in the graphite crucible, stirring for 20 to 40min, stopping the stirring and heating, cooling to lower than 50DEG C, and taking the alloy out from the furnace.
Description
Technical field
The present invention relates to the production method of a kind of High-efficient Production gallium-magnesium alloy or indium-magnesium alloy, belong to field of new.
Background technology
Gallium-magnesium alloy and indium-magnesium alloy are mainly used in the production high-purity metal organic compound, and the method efficient of producing gallium-magnesium alloy or indium-magnesium alloy at present is low, the production cost height.
Summary of the invention
At the deficiencies in the prior art, the present invention has designed the production method of a kind of gallium-magnesium alloy or indium-magnesium alloy, and its technical scheme is:
The production method of a kind of gallium-magnesium alloy or indium-magnesium alloy,
Gallium and MAGNESIUM METAL or indium metal and MAGNESIUM METAL are prepared burden according to a certain percentage, insert plumbago crucible, in the vacuum oven of packing into, sealing is evacuated down to and is lower than 10
-4Mpa stops to vacuumize, and then charges into hydrogen, after vacuumizing (vacuum tightness is the same) again, after feeding hydrogen 10-30min again, be warmed up to 500-700 ℃, treat in the plumbago crucible two kinds of metal meltings after, begin to stir, behind the 20-40min, stop to stir, and stop heating, to be cooled to below 50 ℃, can come out of the stove.
The beneficial effect of the invention:
Technology is simple, and effect is remarkable.
Embodiment
Below by specific embodiment technical solution of the present invention is described in further detail.
[embodiment 1]
A kind of production method of gallium-magnesium alloy:
Gallium and MAGNESIUM METAL are prepared burden according to a certain percentage, insert plumbago crucible, in the vacuum oven of packing into, sealing is evacuated down to and is lower than 10
-4Mpa stops to vacuumize, and then charges into hydrogen, after vacuumizing (vacuum tightness is the same) again, after feeding hydrogen 10-30min again, be warmed up to 500-700 ℃, treat in the plumbago crucible two kinds of metal meltings after, begin to stir, behind the 20-40min, stop to stir, and stop heating, to be cooled to below 50 ℃, can come out of the stove.
Gallium-magnesium alloy is mainly used in produces high-purity metal organic compound trimethyl-gallium, triethyl-gallium, and these two kinds of materials are mainly used in MOCVD.
[embodiment 2]
A kind of production method of indium-magnesium alloy:
Indium metal and MAGNESIUM METAL are prepared burden according to a certain percentage, insert plumbago crucible, in the vacuum oven of packing into, sealing is evacuated down to and is lower than 10
-4Mpa stops to vacuumize, and then charges into hydrogen, after vacuumizing (vacuum tightness is the same) again, after feeding hydrogen 10-30min again, be warmed up to 500-700 ℃, treat in the plumbago crucible two kinds of metal meltings after, begin to stir, behind the 20-40min, stop to stir, and stop heating, to be cooled to below 50 ℃, can come out of the stove.
Indium-magnesium alloy is mainly used in produces high-purity metal organic compound trimethyl indium, triethylindium, is the indium source of metal organic chemical vapor deposition (being called for short MOCVD), metal organic molecular beam epitaxy technology growth Semiconductor Microstructure Materials such as (being called for short MOMBE).
Though the present invention with preferred embodiment openly as above; but they are not to be used for limiting the present invention; anyly be familiar with this skill person; without departing from the spirit and scope of the invention; from when can doing various variations or retouching, so being as the criterion of should being defined with the application's claim protection domain of protection scope of the present invention.
Claims (1)
1. the production method of gallium-magnesium alloy or indium-magnesium alloy, its step be,
With gallium and MAGNESIUM METAL, perhaps indium metal and MAGNESIUM METAL are prepared burden according to a certain percentage, insert plumbago crucible, in the vacuum oven of packing into, seal, and are evacuated down to be lower than 10
-4MPa stops to vacuumize, and then charges into hydrogen, is evacuated down to be lower than 10 again
-4Behind the MPa, feed hydrogen 10-30min again after, be warmed up to 500-700 ℃, treat in the plumbago crucible two kinds of metal meltings after, begin to stir, behind the 20-40min, stop to stir, and stop heating, to be cooled to below 50 ℃, can come out of the stove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102327816A CN101705381B (en) | 2009-12-01 | 2009-12-01 | Method for producing gallium-magnesium alloy or indium-magnesium alloy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102327816A CN101705381B (en) | 2009-12-01 | 2009-12-01 | Method for producing gallium-magnesium alloy or indium-magnesium alloy |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101705381A CN101705381A (en) | 2010-05-12 |
| CN101705381B true CN101705381B (en) | 2011-04-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2009102327816A Expired - Fee Related CN101705381B (en) | 2009-12-01 | 2009-12-01 | Method for producing gallium-magnesium alloy or indium-magnesium alloy |
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| CN (1) | CN101705381B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103484699B (en) * | 2013-09-10 | 2016-01-06 | 中南大学 | A kind of sealing of the Mg-based master alloy containing low melting point metal element melting and casting method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4119704A (en) * | 1975-02-14 | 1978-10-10 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process for making gallium arsenide or phosphide |
| CN1804084A (en) * | 2005-12-28 | 2006-07-19 | 赣州虔东实业（集团）有限公司 | Rare earth gallium alloy and method for preparing the same |
| CN101235451A (en) * | 2008-01-28 | 2008-08-06 | 刘君 | Gallium-aluminum alloy, preparation method and application thereof in hydrogen preparation field |
-
2009
- 2009-12-01 CN CN2009102327816A patent/CN101705381B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4119704A (en) * | 1975-02-14 | 1978-10-10 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process for making gallium arsenide or phosphide |
| CN1804084A (en) * | 2005-12-28 | 2006-07-19 | 赣州虔东实业（集团）有限公司 | Rare earth gallium alloy and method for preparing the same |
| CN101235451A (en) * | 2008-01-28 | 2008-08-06 | 刘君 | Gallium-aluminum alloy, preparation method and application thereof in hydrogen preparation field |
Non-Patent Citations (1)
| Title |
|---|
| 章义平等.镓-镁二元相图研究.《杭州大学学报》.1988,第15卷(第1期), * |
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| CN101705381A (en) | 2010-05-12 |
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Owner name: NANJING CHINA GERMANIUM TECHNOLOGY CO., LTD. Free format text: FORMER NAME: NANJING GERMANIUM TECHNOLOGY CO., LTD. |
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Address after: 211165 general road, Jiangning Development Zone, Jiangsu, Nanjing, China, No. 718 Patentee after: CHINA GERMANIUM CO., LTD. Address before: 211165 general road, Jiangning Development Zone, Jiangsu, Nanjing, China, No. 718 Patentee before: Nanjing Germanium Technology Co., Ltd. |
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Granted publication date: 20110420 Termination date: 20171201 |