CN101705086B - Face-type structural 3(8-hydroxyquinoline) aluminium nano and micro materials and preparation method thereof - Google Patents
Face-type structural 3(8-hydroxyquinoline) aluminium nano and micro materials and preparation method thereof Download PDFInfo
- Publication number
- CN101705086B CN101705086B CN2009102178652A CN200910217865A CN101705086B CN 101705086 B CN101705086 B CN 101705086B CN 2009102178652 A CN2009102178652 A CN 2009102178652A CN 200910217865 A CN200910217865 A CN 200910217865A CN 101705086 B CN101705086 B CN 101705086B
- Authority
- CN
- China
- Prior art keywords
- nano
- face
- oxine
- aluminium
- alq
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000463 material Substances 0.000 title claims abstract description 59
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 17
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 17
- 239000004411 aluminium Substances 0.000 title claims abstract description 16
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 title claims abstract description 16
- 239000005725 8-Hydroxyquinoline Substances 0.000 title abstract 2
- 229960003540 oxyquinoline Drugs 0.000 title abstract 2
- 239000011521 glass Substances 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000843 powder Substances 0.000 claims description 8
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 239000011343 solid material Substances 0.000 claims description 3
- 238000002061 vacuum sublimation Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 16
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 abstract description 6
- 238000000137 annealing Methods 0.000 abstract description 4
- -1 compound small molecule Chemical class 0.000 abstract description 4
- 239000012528 membrane Substances 0.000 abstract description 4
- 150000001875 compounds Chemical class 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000007669 thermal treatment Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 239000002086 nanomaterial Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000008204 material by function Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000006392 deoxygenation reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000002189 fluorescence spectrum Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000005493 condensed matter Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- JVZRCNQLWOELDU-UHFFFAOYSA-N gamma-Phenylpyridine Natural products C1=CC=CC=C1C1=CC=NC=C1 JVZRCNQLWOELDU-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005298 paramagnetic effect Effects 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Landscapes
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to the technical field of organic/coordination compounds photoelectric materials and devices. The invention provides a coordination compound small molecule 3(8-hydroxyquinoline) aluminium(Alq3) nano and micro material and a preparation method thereof, in particular to a face-type structural Alq3 nano and micro material prepared by amorphous membrane annealing (heat treatment) and a method thereof. The luminous peak positions of the face-type Alq3 nano and micro material and the memebrane material obtained in the invention are in a range of 465-475nm, the nano and micro material is in a rod-like structure, the diameter is 200-5000nm, the length is 3-50 mu m. The thickness of the luminous membrane constituted by the nano and micro material which is in a rod-like structure is between 200-5000nm, and the materials can be used for preparing ITO glass and can be used for preparing organic photoelectric devices.
Description
Technical field
The technical field that the present invention relates to belongs to organic and devices field, the invention relates to a kind of title complex small molecules three (oxine) aluminium (Alq
3) nano and micro materials and preparation method thereof, especially make face-type structural Alq through amorphous membrance annealing (thermal treatment)
3Nano and micro materials and method.
Background technology
Through formula Alq3 face formula Alq3
The organic semiconductor luminescent material is being brought into play crucial effects at organic electroluminescent in the various fields such as field-effect transistor and solar cell, Alq
3Receive as the organic semiconductor luminescent material of classics always and to pay close attention to widely and to study.As a typical title complex, Alq
3Molecule has through formula and two kinds of isometry body structures of face formula (seeing following formula).Relevant research proof Alq
3Molecule is generally existing through the formula structure, and face formula Alq
3Molecule can be through high-temperature heat treatment through formula Alq
3Obtain (J.Physics:Condensed Matter, 2005,17,6271-6283, Paramagnetic defect centres in crystalline Alq
3Advanced FunctionalMaterials, 2003,13,108-112, Preparation and characterization ofblue-luminescent tris (8-hydroxyquinaline) aluminum (Alq
3)).Some are arranged about Alq recent years
3The report of nano and micro materials (Advanced Functional Materials; 2006; 16; 1985-1991, Photoluminescence and electroluminescence fromtris (8-hydroxyquinoline) aluminum nanowires prepared by adsorbent-assistedphysical vapor deposition; Advanced Functional Materials, 2006,16,819-823, Crystallization of amorphous tris (8-hydroxyquinoline) aluminum nanoparticles andtransformation to nanowires; Advanced Materials, 2008,20,2747-2750, Alq
3Nanorods:Promising building blocks for optical devices.), but all these nano and micro materials all are by through formula structure Alq
3Molecule constitutes, and does not have face formula Alq
3The report of nano and micro materials.How to prepare Alq in addition
3Receive mems thin film material, especially face formula Alq
3The micron film material of receiving also is a very important problem, because face formula Alq
3The micron film material of receiving can be used for the preparation and the assembling of some photoelectric devices.
Summary of the invention
The object of the invention just provides three (oxine) aluminium (fac-Alq of face-type structural
3) preparation method of nano and micro materials (comprising thin-film material) and this nano and micro materials.
Because method provided by the invention can prepare the Alq of face-type structural
3Nano and micro materials, therefore solved face formula Alq
3Be applied to the obstacle of device, provided by the invention formula Alq
3Nano micro-material can be used for (comprising thin-film material) assembling or the preparation of organic electro-optic device.The invention provides a kind of organic film thermal treatment (annealing) method, this method is through heating two Alq that closely stack
3The evaporated film material prepares face formula Alq
3Nano and micro materials and thin-film material.Control through thermal treatment temp and time can obtain high-quality formula Alq
3Nano and micro materials and thin-film material.And prove provided by the present invention formula Alq
3Nano and micro materials has the hole transport characteristic.
The face formula Alq that the present invention obtains
3The luminous peak position of nano and micro materials and thin-film material is at 465～475nm, and nano and micro materials is club shaped structure, diameter 200～5000nm, length 3～50 μ m.Be light-emitting film thickness that club-shaped material constitutes between 200～5000nm by nano and micro materials, said material can prepare on ito glass, and can be used to prepare organic electro-optic device.
The objective of the invention is to realize: the Alq that adopts the amorphous membrance heat-treating methods that prepared beforehand is accomplished through following technical scheme
3Amorphous membrance carries out anneal, again through the surface deposition of closely placing is face-to-face had Alq
3The substrate of film is annealed, and makes Alq
3Realize the growth of nano and micro materials and the transformation of crystalline phase, thereby prepared face formula Alq
3Nano and micro materials.
May further comprise the steps:
1, be substrate (can prepare electrode in advance in the substrate) with glass (comprising silica glass, ito glass) or silicon chip, in substrate vacuum moulding machine prepare thickness be 50～2000nm through formula Alq
3Amorphous membrance;
2, with two depositing Al q
3It (is Alq that the substrate of amorphous membrance is stacked together relatively
3Amorphous membrance stacks face-to-face), and be placed in the Glass Containers (container bottom add in advance 100～500mg through formula Alq
3Pressed powder), under nitrogen atmosphere, under 380～400 ℃ of hot conditionss, annealed 30～60 minutes;
3, stop heating, cool to room temperature under nitrogen atmosphere can obtain face formula Alq
3Nano and micro materials (film).
Alq
3The introducing of pressed powder can make the certain Alq of maintenance in the high temperature lower-glass container
3Vp can effectively prevent suprabasil Alq
3Thereby the film volatilization breaks away from substrate.
Above-mentioned Alq
3Amorphous thin film is to adopt high vacuum (10
-5～10
-6Holder) mode of vapor deposition prepares, at annealing stage with nitrogen as shielding gas, with two Alq that made
3Amorphous membrance be placed in the heating container face-to-face and heat-treat, and continue 30～60 minutes.If thermal treatment temp is about 380～400 ℃, then obtain face formula Alq
3Nano and micro materials (blue light-emitting has cavity transmission ability); If thermal treatment temp is about 300～320 ℃, then obtain through formula Alq
3Nano material (green light has electron transport ability).Therefore through the control of thermal treatment temp, the present invention can provide the Alq of different phases
3Nano material.As initial Alq
3When amorphous thin film thickness acquires a certain degree (about 500nm), the Alq that in substrate, forms
3The nanometer rod uniform spreading forms film, therefore the invention provides a kind ofly can prepare Alq
3The method of nano film material.Need to prove that method provided by the invention not only is fit to preparation Alq
3Nano and micro materials also is fit to other organic or complex molecule constitutes nano material of preparation, like phenylpyridine or derivatives thereof complex of iridium, Gaq
3, porphyrin compound, phthalocyanine compound etc.
Description of drawings
Fig. 1: face formula (fac-) structure Alq
3Fluorescent microscope photo (a) and stereoscan photograph (b);
Fig. 2: face formula Alq
3Receive the current voltage characteristic of micron film;
Fig. 3: through formula (mer-) structure Alq
3Fluorescent microscope photo (a) and stereoscan photograph (b);
Fig. 4: through formula Alq
3Receive the current voltage characteristic of micron film;
Fig. 5: face formula Alq
3The fluorescence spectrum of nano and micro materials.
Embodiment
Below in conjunction with embodiment the present invention is done further elaboration, rather than will limit the invention with this.
Embodiment 1: preparation face formula Alq
3Receive micron film
1: utilize through formula Alq
3Be feedstock production Alq
3Amorphous thin film
Will be through formula Alq
3Solid material is purified through conventional vacuum-sublimation method, is used to prepare amorphous thin film after the room temperature deposition, and this method of purification can be prepared purified through formula Alq
3Powder.With the silica glass is substrate, and (vacuum tightness is about 10 to utilize the vacuum evaporation appearance
-5～10
-6Holder) heating evaporation is above-mentioned through formula Alq under the temperature condition of 230 ℃ (± 10 ℃)
3Powder, thus in substrate, prepare the Alq that thickness is 50～2000nm through vacuum-deposited method
3Amorphous membrance.
2: face formula Alq
3Receive the preparation of micron film
Be coated with Alq with two
3The silica glass basal surface opposite of amorphous membrance is positioned in the Glass Containers, that container bottom has is a certain amount of (100～500mg) through formula Alq
3Pressed powder vacuumizes deoxygenation with Glass Containers, charges into nitrogen then, and container is heated to 390 ℃, keeps this temperature 45 minutes, stops heating afterwards, and naturally cools to room temperature, can on two pieces of quartz glass substrate surfaces, obtain face formula Alq respectively
3Nano and micro materials.Above-mentioned whole process (from beginning to be heated to cool to room temperature) keeps being in the container nitrogen atmosphere protection down.Fluorescent microscope photo and stereoscan photograph proof is the nano-micrometre material of face-type structural what substrate surface obtained material, and the material of acquisition is club shaped structure, diameter 200～5000nm, and length 3～50 is m 4., and is as shown in Figure 1.As shown in Figure 5, face formula Alq
3In the fluorescence spectrum of nano and micro materials, the luminous peak position of nano and micro materials is 472nm.
Embodiment 2: with face formula Alq
3The nanometer micrometer structure film is single carrier transfer device of active coating
1: make Alq
3Amorphous membrance method such as embodiment 1 are said;
2: preparation face formula Alq
3It is said to receive micron film such as embodiment 1;
3: preparation is based on face formula Alq
3Single carrier transfer device of nanometer micrometer structure ultrathin membrane
Device architecture is: [ITO/ face formula Alq
3(1000nm)/LiF (15nm)/Au (2000nm)].At ITO surface preparation face formula Alq
3Receive micron film, be that anode, LiF and Au are composite cathode with ITO.Conducting performance test proof face formula Alq
3The mems thin film of receiving has good cavity and injects and transport property, and the concrete experimental data of device performance is as shown in Figure 2.Along with the increase of voltage, the electric current of device increases gradually, when strength of electric field reaches 16 * 10
4The volt/centimetre the time, current density reaches 300 milliamperes/square centimeter, and face formula Alq is described
3Nano and micro materials has good cavity transmission ability.
Embodiment 3: double-basis sheet legal system is equipped with through formula Alq
3Receive micron film
1: utilize through formula Alq
3Be feedstock production Alq
3Amorphous thin film
With Alq
3Solid material is purified through conventional vacuum-sublimation method, and the sample of room temperature deposition is used to prepare amorphous thin film, and this method of purification can be prepared purified through formula Alq
3Powder.With the silica glass is substrate, and (vacuum tightness is 10 to utilize the vacuum evaporation appearance
-5～10
-6Holder) heating evaporation Alq under the temperature condition of 230 ℃ (± 10 ℃)
3, prepare the Alq that thickness is 50～2000nm through vacuum-deposited method
3Amorphous membrance.
2: through formula Alq
3The preparation of nano and micro materials
Be coated with Alq with two
3The silica glass basal surface opposite of amorphous membrance is positioned in the Glass Containers, that container bottom has is a certain amount of (100～500mg) through formula Alq
3Pressed powder vacuumizes deoxygenation with Glass Containers, charges into nitrogen then, and container is heated to 300 ℃, keeps this temperature 45 minutes, stops heating afterwards, and naturally cools to room temperature, can on two pieces of quartz glass base kilsyth basalt faces, obtain respectively through formula Alq
3Nano and micro materials.Above-mentioned whole process (from beginning to be heated to cool to room temperature) keeps being in the container nitrogen atmosphere protection down.Fluorescent microscope photo and stereoscan photograph proof obtain the nano material through the formula structure that is of material, and the material of acquisition is club shaped structure, and diameter 200～5000nm length 3～50 is m 4., and is as shown in Figure 3.
Embodiment 4: with through formula Alq
3The nanometer micrometer structure film is single carrier transfer device of active coating
1: synthetic Alq
3Amorphous membrance method such as embodiment 1 are said
2: preparation is through formula Alq
3It is said to receive micron film such as instance 1
3: preparation is based on through formula Alq
3Single carrier transfer device of nanometer micrometer structure ultrathin membrane
Device architecture is: [ITO/ is through formula Alq
3(1000nm)/LiF (15nm)/Au (2000nm)].In the ITO surface preparation through formula Alq
3Receive micron film, be that anode, LiF and Au are composite cathode with ITO.The conducting performance test proof is through formula Alq
3The cavity transmission ability of mems thin film received is very poor, and the concrete experimental data of device performance is as shown in Figure 4.Along with the increase of voltage, the electric current of device increases very slow gradually, when strength of electric field reaches 16 * 10
4The volt/centimetre the time, current density reaches 30 * 10
-7Milliampere/square centimeter is explained through formula Alq
3Nano and micro materials has the good electron transmittability.
Claims (5)
1. a face-type structural three (oxine) aluminium nano and micro film; It is characterized in that: this thickness of receiving micron film is 200～5000nm; Luminous peak position is at 465～475nm; Nano and micro materials by being club shaped structure, diameter 200～5000nm, length 3～50 μ m constitutes, and this is received micron film and is prepared by following steps
1) in substrate vacuum moulding machine prepare thickness be 50～2000nm through formula three (oxine) aluminium amorphous membrance;
2) substrate with two deposition three (oxine) aluminium amorphous membrances is stacked together relatively; And be placed in the Glass Containers; Glass Containers bottom add in advance 100～500mg through formula three (oxine) aluminium pressed powder, under nitrogen atmosphere, under 380～400 ℃ of hot conditionss, annealed 30～60 minutes;
3) stop heating, cool to room temperature under nitrogen atmosphere can obtain face formula three (oxine) aluminium nano and micro film.
2. face-type structural three as claimed in claim 1 (oxine) aluminium nano and micro film, it is characterized in that: substrate is silica glass, ito glass or silicon chip.
3. face-type structural three as claimed in claim 1 (oxine) aluminium nano and micro film, it is characterized in that: vacuum-deposited vacuum tightness is 10
-5～10
-6Holder.
4. face-type structural three as claimed in claim 1 (oxine) aluminium nano and micro film; It is characterized in that: will purify through the vacuum-sublimation method through formula three (oxine) aluminium solid material, and be used for preparation after the room temperature deposition through formula three (oxine) aluminium amorphous thin film.
5. any one described face-type structural three (oxine) aluminium nano and micro film of claim 1～4 is in the application that is used to prepare aspect the organic electro-optic device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102178652A CN101705086B (en) | 2009-11-18 | 2009-11-18 | Face-type structural 3(8-hydroxyquinoline) aluminium nano and micro materials and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102178652A CN101705086B (en) | 2009-11-18 | 2009-11-18 | Face-type structural 3(8-hydroxyquinoline) aluminium nano and micro materials and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101705086A CN101705086A (en) | 2010-05-12 |
| CN101705086B true CN101705086B (en) | 2012-11-07 |
Family
ID=42375343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009102178652A Active CN101705086B (en) | 2009-11-18 | 2009-11-18 | Face-type structural 3(8-hydroxyquinoline) aluminium nano and micro materials and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101705086B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106058046B (en) * | 2016-08-09 | 2019-01-01 | 苏州华莱德电子科技有限公司 | A kind of organometallic complex p-n junction nanometer crystal preparation method |
| CN106207011B (en) * | 2016-08-09 | 2018-02-27 | 苏州华莱德电子科技有限公司 | Microwave radiation technology crystalline controlling organic electroluminescence device preparation method |
| CN113667937B (en) * | 2021-07-30 | 2023-06-06 | 华南师范大学 | Alq 3 Preparation method and application of nanowire horizontal array |
-
2009
- 2009-11-18 CN CN2009102178652A patent/CN101705086B/en active Active
Non-Patent Citations (1)
| Title |
|---|
| Bingshe Xu et al.《Preparation and performance of a new type of blue light-emitting material δ-Alq3》.《Journal of Luminescence》.2006,第122-123卷 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101705086A (en) | 2010-05-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Liu et al. | Soft template‐controlled growth of high‐quality CsPbI3 films for efficient and stable solar cells | |
| Cui et al. | Coaxial Organic p‐n Heterojunction Nanowire Arrays: One‐Step Synthesis and Photoelectric Properties | |
| Wang et al. | Au‐Doped Polyacrylonitrile–Polyaniline Core–Shell Electrospun Nanofibers Having High Field‐Effect Mobilities | |
| WO2013015460A1 (en) | Graphene sheet, transparent electrode having same, active layer, and display device, electronic device, optoelectronic device, battery, solar cell, and dye-sensitized solar cell including same | |
| US20120061658A1 (en) | Structural templating for organic electronic devices having an organic film with long range order | |
| CN111739961B (en) | Based on ordered SnO2Nanorod array inorganic perovskite solar cell and preparation method thereof | |
| CN113481602B (en) | Preparation method of infinite layer type nickelate film with superconducting property | |
| CN100491604C (en) | Condensed aromatic organic semiconductor single-crystal micro/nano materials and their preparation method and application | |
| CN101705086B (en) | Face-type structural 3(8-hydroxyquinoline) aluminium nano and micro materials and preparation method thereof | |
| CN108807675A (en) | A kind of preparation method of solar battery of surface passivation perovskite thin film | |
| Ku et al. | Solvent engineering for fast growth of centimetric high-quality CH 3 NH 3 PbI 3 perovskite single crystals | |
| CN101271956A (en) | Method for polymer-assistant depositing high temperature superconducting coating conductor superconducting layer | |
| Han et al. | Significance of Ambient Temperature Control for Highly Reproducible Layered Perovskite Light-Emitting Diodes | |
| CN100511751C (en) | An organic field effect transistor and manufacture method thereof | |
| Zhang et al. | Fabrication and physical properties of self-assembled ultralong polymer/small molecule hybrid microstructures | |
| CN104022221A (en) | Method for preparing ultra-thin and large organic small molecule single crystal wafer layer and high-quality bottom grid top contact field effect transistor of ultra-thin and large organic small molecule single crystal wafer layer | |
| CN106207011B (en) | Microwave radiation technology crystalline controlling organic electroluminescence device preparation method | |
| CN101693528B (en) | Method for growing ZnSe monocrystal nanowire | |
| Han et al. | Photophysical and electrical properties of organic waveguide nanorods of perylene-3, 4, 9, 10-tetracarboxylic dianhydride | |
| CN106058046B (en) | A kind of organometallic complex p-n junction nanometer crystal preparation method | |
| CN102263036A (en) | Method for preparing CdS/ZnS nanometer wire heterojunction | |
| CN101950786A (en) | Method for preparing silicon-based light emitting diode (LED) | |
| Zhou et al. | Vacuum Processed Metal Halide Perovskite Light‐Emitting Diodes | |
| Liu et al. | High‐Efficiency Blue‐Emission Crystalline Organic Light‐Emitting Diodes by Engineering Thermally Activated Delayed Fluorescence Nanoaggregates | |
| CN113193122B (en) | Perovskite thin film based on PbCl2 buffer layer and preparation method and application thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170818 Address after: Room 5, building A, zone, No. 2499, Wei Shan Road, high tech Zone, Changchun, Jilin, China Patentee after: Jilin University Science Park Development Center Address before: 130023 No. 2699 Qianjin Street, Changchun, Jilin, Chaoyang District Patentee before: Jilin University |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20171009 Address after: 130012 Jilin province Changchun high tech District No. 3333 North Street North Grand Changchun science and technology park a first floor of building C2-1 Patentee after: Jilin Jida Incubator Co. Ltd. Address before: Room 5, building A, zone, No. 2499, Wei Shan Road, high tech Zone, Changchun, Jilin, China Patentee before: Jilin University Science Park Development Center |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20171129 Address after: 130000 Jilin province Changchun Beihu Sheng Technology Development Zone No. 3333 North Street North Lake Science and technology park a B1-1 8 storey building 801 room 002 block Patentee after: Jilin meta synthetic electronic material Limited by Share Ltd Address before: 130012 Jilin province Changchun high tech District No. 3333 North Street North Grand Changchun science and technology park a first floor of building C2-1 Patentee before: Jilin Jida Incubator Co. Ltd. |
|
| TR01 | Transfer of patent right | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 130000 Jilin province Changchun Beihu Sheng Technology Development Zone No. 3333 North Street North Lake Science and technology park a B1-1 8 storey building 801 room 002 block Patentee after: Jilin Yuanhe Electronic Material Co.,Ltd. Address before: 130000 Jilin province Changchun Beihu Sheng Technology Development Zone No. 3333 North Street North Lake Science and technology park a B1-1 8 storey building 801 room 002 block Patentee before: Jilin meta synthetic electronic material Limited by Share Ltd. |
|
| CP01 | Change in the name or title of a patent holder |