CN101705086B - Face-type structural 3(8-hydroxyquinoline) aluminium nano and micro materials and preparation method thereof - Google Patents
Face-type structural 3(8-hydroxyquinoline) aluminium nano and micro materials and preparation method thereof Download PDFInfo
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- CN101705086B CN101705086B CN2009102178652A CN200910217865A CN101705086B CN 101705086 B CN101705086 B CN 101705086B CN 2009102178652 A CN2009102178652 A CN 2009102178652A CN 200910217865 A CN200910217865 A CN 200910217865A CN 101705086 B CN101705086 B CN 101705086B
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- 239000000463 material Substances 0.000 title claims abstract description 59
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 17
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 17
- 239000004411 aluminium Substances 0.000 title claims abstract description 16
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 title claims abstract description 16
- 239000005725 8-Hydroxyquinoline Substances 0.000 title abstract 2
- 229960003540 oxyquinoline Drugs 0.000 title abstract 2
- 239000011521 glass Substances 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000843 powder Substances 0.000 claims description 8
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 239000011343 solid material Substances 0.000 claims description 3
- 238000002061 vacuum sublimation Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 16
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 abstract description 6
- 238000000137 annealing Methods 0.000 abstract description 4
- -1 compound small molecule Chemical class 0.000 abstract description 4
- 239000012528 membrane Substances 0.000 abstract description 4
- 150000001875 compounds Chemical class 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000007669 thermal treatment Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 239000002086 nanomaterial Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000008204 material by function Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000006392 deoxygenation reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000002189 fluorescence spectrum Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000005493 condensed matter Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- JVZRCNQLWOELDU-UHFFFAOYSA-N gamma-Phenylpyridine Natural products C1=CC=CC=C1C1=CC=NC=C1 JVZRCNQLWOELDU-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005298 paramagnetic effect Effects 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2009102178652A CN101705086B (en) | 2009-11-18 | 2009-11-18 | Face-type structural 3(8-hydroxyquinoline) aluminium nano and micro materials and preparation method thereof |
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CN2009102178652A CN101705086B (en) | 2009-11-18 | 2009-11-18 | Face-type structural 3(8-hydroxyquinoline) aluminium nano and micro materials and preparation method thereof |
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CN101705086A CN101705086A (en) | 2010-05-12 |
CN101705086B true CN101705086B (en) | 2012-11-07 |
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CN2009102178652A Active CN101705086B (en) | 2009-11-18 | 2009-11-18 | Face-type structural 3(8-hydroxyquinoline) aluminium nano and micro materials and preparation method thereof |
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CN (1) | CN101705086B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106207011B (en) * | 2016-08-09 | 2018-02-27 | 苏州华莱德电子科技有限公司 | Microwave radiation technology crystalline controlling organic electroluminescence device preparation method |
CN106058046B (en) * | 2016-08-09 | 2019-01-01 | 苏州华莱德电子科技有限公司 | A kind of organometallic complex p-n junction nanometer crystal preparation method |
CN113667937B (en) * | 2021-07-30 | 2023-06-06 | 华南师范大学 | Alq 3 Preparation method and application of nanowire horizontal array |
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2009
- 2009-11-18 CN CN2009102178652A patent/CN101705086B/en active Active
Non-Patent Citations (1)
Title |
---|
Bingshe Xu et al.《Preparation and performance of a new type of blue light-emitting material δ-Alq3》.《Journal of Luminescence》.2006,第122-123卷 * |
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CN101705086A (en) | 2010-05-12 |
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Effective date of registration: 20170818 Address after: Room 5, building A, zone, No. 2499, Wei Shan Road, high tech Zone, Changchun, Jilin, China Patentee after: Jilin University Science Park Development Center Address before: 130023 No. 2699 Qianjin Street, Changchun, Jilin, Chaoyang District Patentee before: Jilin University |
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Effective date of registration: 20171009 Address after: 130012 Jilin province Changchun high tech District No. 3333 North Street North Grand Changchun science and technology park a first floor of building C2-1 Patentee after: Jilin Jida Incubator Co. Ltd. Address before: Room 5, building A, zone, No. 2499, Wei Shan Road, high tech Zone, Changchun, Jilin, China Patentee before: Jilin University Science Park Development Center |
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Effective date of registration: 20171129 Address after: 130000 Jilin province Changchun Beihu Sheng Technology Development Zone No. 3333 North Street North Lake Science and technology park a B1-1 8 storey building 801 room 002 block Patentee after: Jilin meta synthetic electronic material Limited by Share Ltd Address before: 130012 Jilin province Changchun high tech District No. 3333 North Street North Grand Changchun science and technology park a first floor of building C2-1 Patentee before: Jilin Jida Incubator Co. Ltd. |
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Address after: 130000 Jilin province Changchun Beihu Sheng Technology Development Zone No. 3333 North Street North Lake Science and technology park a B1-1 8 storey building 801 room 002 block Patentee after: Jilin Yuanhe Electronic Material Co.,Ltd. Address before: 130000 Jilin province Changchun Beihu Sheng Technology Development Zone No. 3333 North Street North Lake Science and technology park a B1-1 8 storey building 801 room 002 block Patentee before: Jilin meta synthetic electronic material Limited by Share Ltd. |
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