CN101698485B - Method for manufacturing non-solid electrolyte high-frequency tantalum capacitor electrolyte by using silica sol - Google Patents
Method for manufacturing non-solid electrolyte high-frequency tantalum capacitor electrolyte by using silica sol Download PDFInfo
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- CN101698485B CN101698485B CN2009100672188A CN200910067218A CN101698485B CN 101698485 B CN101698485 B CN 101698485B CN 2009100672188 A CN2009100672188 A CN 2009100672188A CN 200910067218 A CN200910067218 A CN 200910067218A CN 101698485 B CN101698485 B CN 101698485B
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- silicon
- silica sol
- frequency
- tantalum capacitor
- solid electrolyte
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Abstract
The invention relates to a method for manufacturing non-solid electrolyte high-frequency tantalum capacitor electrolyte by using silica sol. The method comprises the following steps: (1) purifying elemental silicon and ensuring that the purity of the purified elemental silicon is more than or equal to 99.9 percent; (2) stirring deionized water and the elemental silicon in a ratio of 1:10-20, adding 0.1 to 5 percent sodium hydroxide for reaction, wherein the reaction temperature is between 55 and 100 DEG C, the reaction time is 30 to 60min, the temperature control precision is controlled at +/- 0.5 DEG C, and the pH value of the formed silica sol is between 8.0 and 9.0; (3) cooling and standing the reaction products for 200 to 500min; (4) carrying out filtration under diminished pressure to ensure that the grain diameter is less than 10nm; and (5) carrying out centrifugal separation for 600 to 300s to obtain a finished product of the silica sol, wherein the density is between 1.15 and 1.17g/cm3 and the purity is more than or equal to 99.99 percent. The method has the advantages that: the non-solid electrolyte high-frequency tantalum capacitor manufactured by the method has the performance of high temperature resistance, low leakage current, 50 to 100 KHZ operating frequency, large high-frequency equivalent capacitance, small ESR, high reliability and the like.
Description
Technical field
The invention belongs to technical field of electronic components, relate to a kind of improvement of electrical condenser production method.
Background technology
Development along with electronic science and technology, non-solid ionogen high frequency tantalum capacitor has a wide range of applications, in order to satisfy the application request of field complete machine power supplys such as space flight, aviation, that non-solid ionogen high frequency tantalum capacitor must have is high temperature resistant, low-leakage current, operating frequency 50KHZ ~ 100KHZ, high frequency equivalent electric capacity are big, ESR is little, performances such as high reliability, it is crucial reaching the non-solid electrolysis tantalum capacitor of these premium propertiess used for electrolyte silicon sol.General non-solid tantalum electrolytic capacitor electrolytic solution adopts sulfuric acid, vitriol, chromic salt, silicate, phosphoric acid salt, ethyl acetate, ethylene glycol etc. can not satisfy above-mentioned requirement on electric performance.
Summary of the invention
The objective of the invention is: a kind of method for manufacturing non-solid electrolyte high-frequency tantalum capacitor electrolyte by using silica sol is provided, this manufacture method can make silicon sol have high purity, resistant to elevated temperatures characteristics, has good nano-grade size and good dispersing uniformity.
Principle of work of the present invention is:
To be used to make the raw-material elemental silicon of non-solid electrolyte high-frequency tantalum capacitor electrolyte by using through purifying, under the effect of catalyzer sodium hydroxide, close silicic acid with the deionized water water generation reaction, silicate hydrate is polymerization gradually in water medium, by monomer dewater voluntarily aggregate into diprotic acid gradually, triprotic acid is to polyploid, rise to required size dimension gradually, form the aqueous solution of silicate hydrate, be silicon sol.Its reaction formula is:
In this section, control such as reaction conditions such as catalyzer, temperature, reaction times is extremely important, has guaranteed the silicon sol grain size and the dispersed uniform that synthesize.Repeatedly the stage trapping method is removed impurity, obtains the high-purity nano grade silica sol.
Manufacture method of the present invention is:
1, the starting material elemental silicon that will make non-solid electrolyte high-frequency tantalum capacitor electrolyte by using silica sol is purified, elemental silicon purity 〉=99.9% after the purification.
2, be that 4M Ω .cm～10M Ω .cm deionized water fully stirs in the ratio with elemental silicon 1: 10～20 with resistivity, the sodium hydroxide of adding 0.1%～5%, temperature of reaction is 55 ℃～100 ℃, temperature-controlled precision ± 0.5 ℃, reaction times 30min～60min, PH8.0～9.0 of formation silicon sol.
3, silicon sol is cooled to room temperature, leaves standstill 200min～500min under super-clean environment.
4, the silicon sol after leaving standstill is carried out filtration under diminished pressure on suction filter, pressure-controlling is 1 * 10
-3～1 * 10
-4Pa, silicon sol particle diameter after filtering should be less than 10nm.
5, the silicon sol behind the suction filtration is adopted high speed centrifugation separation stage by stage, the centrifuge speed of fs will be a little less than the centrifuge speed of subordinate phase.Disengaging time 60s～300s, isolated liquid is the silicon sol finished product, density 1.15～1.17g/cm
3, purity 〉=99.99%.
The invention has the beneficial effects as follows:
That the non-solid ionogen high frequency tantalum capacitor that adopts the present invention to produce has is high temperature resistant, low-leakage current, operating frequency 50KHZ～100KHZ, high frequency equivalent electric capacity are big, and ESR is little, performances such as high reliability.
Embodiment
Embodiment 1
1, the starting material elemental silicon that will make non-solid electrolyte high-frequency tantalum capacitor electrolyte by using silica sol is purified, elemental silicon purity 〉=99.9% after the purification.
2, be that 4M Ω .cm～10M Ω .cm deionized water is in fully stirring with 1: 13 ratio of elemental silicon with resistivity, add 4% sodium hydroxide, temperature of reaction is 80 ℃, temperature-controlled precision ± 0.5 ℃, reaction times 40min～50min, PH8.0～9.0 of formation silicon sol.
3, silicon sol is cooled to room temperature, leaves standstill 250min～400min under super-clean environment.
4, the silicon sol after leaving standstill is carried out filtration under diminished pressure on suction filter, pressure-controlling is 1 * 10
-3～1 * 10
-4Pa, silicon sol particle diameter after filtering should be less than 10nm.
5, the silicon sol behind the suction filtration is adopted high speed centrifugation separation stage by stage, the centrifuge speed of fs will be a little less than the centrifuge speed of subordinate phase.Disengaging time 120s～300s, isolated liquid is the silicon sol finished product, density 1.15～1.17g/cm
3, purity 〉=99.99%.
Product feature of the present invention is as follows:
Product appearance; Translucent colloidal liquid is creamy white.
PH value: 8.0～9.0;
SiO
2Content 26%～27%;
Na
2O content≤0.3%;
Density 1.15～1.17g/cm
3
Median size＜10nm;
Purity 〉=99.99%;
Temperature profile＞200 ℃.
Claims (1)
1. method for manufacturing non-solid electrolyte high-frequency tantalum capacitor electrolyte by using silica sol, its method is:
A, the starting material elemental silicon that will make non-solid electrolyte high-frequency tantalum capacitor electrolyte by using silica sol are purified elemental silicon purity 〉=99.9% after the purification;
B, be that 4M Ω .cm～10M Ω .cm deionized water fully stirs in the ratio with elemental silicon 1: 10～20 with resistivity, the sodium hydroxide of adding 0.1%～5%, temperature of reaction is 55 ℃～100 ℃, temperature-controlled precision ± 0.5 ℃, reaction times 30min～60min, pH8.0～9.0 of formation silicon sol;
C, silicon sol are cooled to room temperature, leave standstill 200min～500min under super-clean environment;
D, the silicon sol after leaving standstill is carried out filtration under diminished pressure on suction filter, pressure-controlling is 1 * 10
-3～1 * 10
-4Pa, silicon sol particle diameter after filtering should be less than 10nm;
F, adopt stage by stage high speed centrifugation to separate the silicon sol behind the suction filtration, the centrifuge speed of fs will be a little less than the centrifuge speed of subordinate phase, disengaging time 60s～300s, and isolated liquid is the silicon sol finished product, density 1.15～1.17g/cm
3, purity 〉=99.99%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100672188A CN101698485B (en) | 2009-07-03 | 2009-07-03 | Method for manufacturing non-solid electrolyte high-frequency tantalum capacitor electrolyte by using silica sol |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100672188A CN101698485B (en) | 2009-07-03 | 2009-07-03 | Method for manufacturing non-solid electrolyte high-frequency tantalum capacitor electrolyte by using silica sol |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101698485A CN101698485A (en) | 2010-04-28 |
| CN101698485B true CN101698485B (en) | 2011-10-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009100672188A Expired - Fee Related CN101698485B (en) | 2009-07-03 | 2009-07-03 | Method for manufacturing non-solid electrolyte high-frequency tantalum capacitor electrolyte by using silica sol |
Country Status (1)
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|---|---|
| CN (1) | CN101698485B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112908706B (en) * | 2021-02-04 | 2022-10-11 | 广州金立电子有限公司 | High-reliability capacitor and preparation method thereof |
| CN112908704B (en) * | 2021-02-04 | 2022-10-11 | 广州金立电子有限公司 | Electrolyte of high-temperature-resistant capacitor and capacitor |
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2009
- 2009-07-03 CN CN2009100672188A patent/CN101698485B/en not_active Expired - Fee Related
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| Publication number | Publication date |
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| CN101698485A (en) | 2010-04-28 |
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