CN101694989B - Monolithic filter component based on acoustic interface waves and integrated with MEMS switches and manufacture method thereof - Google Patents
Monolithic filter component based on acoustic interface waves and integrated with MEMS switches and manufacture method thereof Download PDFInfo
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- CN101694989B CN101694989B CN2009101678694A CN200910167869A CN101694989B CN 101694989 B CN101694989 B CN 101694989B CN 2009101678694 A CN2009101678694 A CN 2009101678694A CN 200910167869 A CN200910167869 A CN 200910167869A CN 101694989 B CN101694989 B CN 101694989B
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Abstract
The invention discloses a monolithic filter component based on acoustic interface waves and integrated with MEMS switches and a manufacture method thereof. The component is formed by integrating one group or more groups of acoustic interface filters and corresponding MEMS switches distributed around each group of acoustic interface filters, wherein the acoustic interface filters are vertical to each other and are arranged into a layered structure; a signal input electrode, a signal output electrode and a grounding electrode of each MEMS switch are all connected with a corresponding bonding pad for encapsulation by leads; the signal output electrode of each filter is connected with the signal input electrode of each MEMS switch by a lead; and the signal input electrode of each filter is connected with the signal output electrode of each MEMS switch by a lead. The filter component overcomes the defects of switch and the filter separation and gigantic size in the prior art, realizes the longitudinal arrangement of the filters and the integration of the filters and the switches and greatly reduces the size of the filter component.
Description
Technical field
The present invention relates to the switching gate filter assembly, be specifically related to a kind of acoustic boundary wave filter assembly integrated morphology and relative production technology by mems switch control.
Background technology
Along with the development of technology is intercepted in frequency hopping communication and wireless, people portability of equipment such as intercept to frequency hopping communication and wireless and have higher requirement.At present, frequency hopping communication, the wireless transceiver filter assembly of intercepting are to be made up of discrete component entirely, and device volume is huge, has occupied the big quantity space of transceiver.
SAW filter is widely used in the filter assembly field with the advantage of its arrowband, low-loss, high rectangle degree; But owing to be difficult to realize integrated with switch; And the parallel arranged of a plurality of filters has increased the wiring difficulty of switch; Cause filter assembly bulky, need a kind of filter assembly Integrated Solution badly to realize the miniaturization of filter assembly.
United States Patent (USP) 7151424B2 utilizes the boundary wave principle, the part-single-ended resonator of ladder-type filter is distributed in the sandwich construction, and adopts through hole to realize that circuit connects, thereby must reduce the volume of filter significantly.But this patent is not mentioned the parallel arranged that how to adopt this structure to realize a plurality of filters, and does not realize the integrated of switch and filter, and is limited for the effect of dwindling the filter assembly volume.
Summary of the invention
Problem to be solved by this invention is: how a kind of monolithic filter component based on acoustic boundary wave, integrated with MEMS switches is provided; This filter assembly overcome that switch separates with filter in the prior art, bulky shortcoming; Realize vertical arrangement and filter and switch integrated of filter, dwindled the volume of filter assembly significantly.
Technical problem proposed by the invention is to solve like this: a kind of monolithic filter component based on acoustic boundary wave, integrated with MEMS switches is provided, comprises some acoustic boundary wave filters and mems switch, it is characterized in that:
1. said acoustic boundary wave filter sets gradually substrate, insulating barrier, filter electrode layer, piezoelectric film and insulating barrier from bottom to up, also comprises singal input electrode, signal output electrode, absorbent treatment and metal level;
2. said mems switch comprises grounding electrode, exciting electrode, singal input electrode, signal output electrode, also comprises the salient point that is arranged on the signal contact zone, the cavity pillar under the signal output electrode, the bridge rete on the output electrode, the dielectric insulation layer on exciting electrode;
3. this assembly by one group or several groups of mutual vertical arrangements and the above-mentioned acoustic boundary wave filter that becomes layer structure be distributed in every group of acoustic boundary wave filter around corresponding mems switch integrated; The singal input electrode of mems switch, signal output electrode, drive electrode, grounding electrode all are connected with lead-in wire with the encapsulation corresponding bonding pad; The singal input electrode of filter is through the signal output electrode of lead-in wire connection input mems switch, and the signal output electrode of filter connects the singal input electrode of output mems switch through lead-in wire.
A kind of manufacture method of the monolithic filter component based on acoustic boundary wave filter, integrated with MEMS switches, this method are made acoustic boundary wave filter earlier, make mems switch then, specifically may further comprise the steps:
(1) the acoustic boundary wave filter is made and may further comprise the steps:
1. growth high rigidity insulating barrier on substrate utilizes stripping technology then, the spin coating photoresist, and filter anti-phase figure is exposed in photoetching, and sputter prepares metal film, removes unnecessary photoresist and electrode, obtains the filter electrode figure;
2. utilize stripping technology, spin coating photoresist on the filter electrode figure, unnecessary photoresist is removed in photoetching; Only stay the photoresist on the extraction electrode; The sputter preparation has the piezoelectric film of preferred orientation, removes photoresist, and exposes extraction electrode; Utilize chemico-mechanical polishing or etch-back techniques polishing film then, remove because the piezoelectric film that interdigital electrode causes is uneven;
3. adopt 2. identical stripping technology, extraction electrode is lived in protection with photoresist, on piezoelectric membrane, prepares absorbent treatment, metal level and high rigidity insulating barrier then, accomplishes the making of ground floor filter;
4. after ground floor acoustic boundary wave filter has been made; On continue to make second layer acoustic boundary wave filter; Each acoustic boundary wave filter is vertical arrangement or stacked arrangement each other; 1. concrete manufacture method repeat-3., after in the end one deck filter completes, accomplish the making of filter;
Between piezoelectric membrane and insulating barrier, can also add absorbent treatment and metal level; Only need step 3. in before the insulating barrier preparation, preparation absorbent treatment or metal level earlier on piezoelectric film, and then prepare insulating barrier; Wherein, the glossing of step in 2. also can be accomplished back enforcement in the insulating barrier preparation;
(2) mems switch is made and may further comprise the steps:
1. on the insulating material on the substrate, apply photoresist, the photoresist of mems switch position is removed in photoetching, on insulating barrier, makes the salient point figure by lithography, and insulating barrier is carried out corrosion thinning, obtains salient point, removes photoresist;
2. on above-mentioned insulating barrier, apply photoresist, make co-planar waveguide and bottom electrode figure then above that by lithography, the preparation lower electrode layer is removed unnecessary photoresist and redundance electrode;
3. after above-mentioned photoetching process, on bottom electrode, apply photoresist, unnecessary photoresist is removed in photoetching, exposes the exciting electrode figure, and growth one deck electrode gap absciss layer on exciting electrode is removed whole photoresists subsequently then;
4. after above-mentioned steps, spin coating one deck photoresist again, mems switch part photoresist is removed in photoetching, prepares sacrifice layer and supporting layer then, and removes unnecessary photoresist and sacrificial layer material;
5. on above-mentioned sacrifice layer, apply photoresist, make contacting metal, top electrode figure by lithography, sputter growth electrode layer is removed photoresist and electrode redundance then, obtains top electrode and electrode layer release window;
6. on top electrode, apply photoresist, make the figure of release window by lithography, preparation bridge rete is removed unnecessary photoresist and bridge film then, obtains bridge mould layer release window;
7. releasing sacrificial layer obtains the air gap structure, accomplishes mems switch and makes;
(3) encapsulation:
Utilize pressure welding; With lead-in wire the signal output electrode of input mems switch and the singal input electrode of acoustic boundary wave filter are linked together; The signal output electrode of the singal input electrode of output mems switch and acoustic boundary wave filter links together; And corresponding bonding pad is gone up in other electrodes and encapsulation weld, block encapsulation at last.
Manufacture method according to the monolithic filter component based on acoustic boundary wave filter, integrated with MEMS switches provided by the present invention; It is characterized in that; Sacrifice layer discharges and adopts wet etching or plasma etching in the mems switch making step; If expendable material is germanium metal or silicon dioxide, then adopt wet etching, corrosive agent is dilution hydrogen peroxide solution or dilute hydrofluoric acid solution; If expendable material is a polyimides, then adopt the oxygen plasma etching.
Beneficial effect of the present invention: through employing acoustic boundary wave filter stratiform structure, thereby realized vertically arranging of filter, avoided filter to arrange, reduced the area of filter significantly on same surface.Through adopting special MEMS technology, overcome the compatible difficult problem of MEMS technology and SAW device manufacture craft, realized the wafer-level package of the integrated and filter assembly of mems switch and filter.
Description of drawings
Fig. 1 is based on filter assembly vertical view acoustic boundary wave, integrated with MEMS switches;
Fig. 2 is a layer structure acoustic boundary wave filter sectional view;
Fig. 3 is each layer filter plane graph, is used to describe each layer filter size, arranges and the electrode lead-out mode;
Fig. 4 is the sectional view of mems switch;
Fig. 5 is the vertical view of mems switch.
Embodiment
Below in conjunction with accompanying drawing the present invention is further described:
The present invention proposes a kind of based on filter assembly structure acoustic boundary wave, integrated with MEMS switches; Layer structure acoustic boundary wave filter and one group or several groups that comprises one group or several groups of vertical arranged is distributed in the mems switch around the filter, adopts related process to realize the integrated of filter and mems switch.Wherein:
1. described acoustic boundary wave filter is followed successively by substrate, insulating barrier, filter electrode layer, piezoelectric film, absorbent treatment, metal level, insulating barrier from bottom to top; Wherein insulating barrier on the substrate and absorbent treatment, metal level can be accepted or rejected according to actual conditions; Each layer film distributing order of filter is not limited to this above-mentioned this a kind of order; Can continue stack film interface wave filter according to a definite sequence as required; To increase height and technology difficulty is the vertical arranged that cost realizes a plurality of filters, has greatly dwindled device volume.
2. described mems switch comprises exciting electrode, grounding electrode, singal input electrode, signal output electrode, also comprises the salient point that is arranged on the signal contact zone, the cavity pillar under the signal output electrode, the bridge rete on the output electrode, the dielectric insulation layer on exciting electrode.
In order to realize said structure, the present invention proposes the process implementing scheme of making this integrated filter assembly.Because the making of layer structure boundary wave filter need be used glossing, and the cavity structure of mems switch can not receive too big ambient pressure, so the present invention proposes to make earlier boundary wave filter, the embodiment of making mems switch again.
The boundary wave filter is made and may further comprise the steps:
1. growth high rigidity insulating barrier on substrate utilizes then and peels off (lift-off) technology, and the spin coating photoresist makes the filter figure by lithography, and sputter prepares metal film, removes unnecessary photoresist and electrode, obtains the filter electrode figure;
2. utilize stripping technology; Spin coating photoresist on the filter electrode figure, unnecessary photoresist is removed in photoetching, only stays the photoresist on the extraction electrode; The sputter preparation has the piezoelectric film of preferred orientation; Remove photoresist, utilize chemico-mechanical polishing (CMP) or eat-back (etch-back) technological polishing film, remove because the piezoelectric film that interdigital electrode causes is uneven;
3. adopt 2. identical stripping technology, extraction electrode is lived in protection with photoresist, on piezoelectric film, prepares absorbent treatment, metal level then; Continue preparation high rigidity insulating barrier then above that; Wherein, the glossing of step in 2. also can be accomplished in this step, accomplishes the making of ground floor filter;
4. after the ground floor filter has been made, on continue to make second layer filter, 1. concrete manufacture method repeat-3., after in the end one deck filter completes, accomplish the making of filter;
After filter completes, begin to make mems switch, mems switch is made and may further comprise the steps:
1. on the insulating material on the substrate, apply photoresist, the photoresist of mems switch position is removed in photoetching, on insulating barrier, makes the salient point figure by lithography, and insulating barrier is carried out corrosion thinning, obtains salient point, removes photoresist;
2. on above-mentioned insulating barrier, apply photoresist, make co-planar waveguide and bottom electrode figure then above that by lithography, the preparation lower electrode layer is removed unnecessary photoresist and redundance electrode;
3. after above-mentioned photoetching process, on bottom electrode, apply photoresist, unnecessary photoresist is removed in photoetching, exposes the exciting electrode figure, and growth one deck electrode gap absciss layer on exciting electrode is removed whole photoresists subsequently then;
4. after above-mentioned steps, spin coating one deck photoresist again, mems switch part photoresist is removed in photoetching, prepares sacrifice layer and supporting layer then, and removes unnecessary photoresist and sacrificial layer material;
5. on above-mentioned sacrifice layer, apply photoresist, make contacting metal, top electrode figure by lithography, sputter growth electrode layer is removed photoresist and electrode redundance then, obtains top electrode and electrode layer release window;
6. on top electrode, apply photoresist, make the figure of release window by lithography, preparation bridge rete is removed unnecessary photoresist and bridge film then, obtains bridge mould layer release window;
7. releasing sacrificial layer obtains the air gap structure, accomplishes mems switch and makes;
Utilize pressure welding; With lead-in wire the signal output electrode of input mems switch and the singal input electrode of acoustic boundary wave filter are linked together; The signal output electrode of the singal input electrode of output mems switch and acoustic boundary wave filter links together; And corresponding bonding pad is gone up in other electrodes and encapsulation weld, block encapsulation at last.
Below, will be with reference to accompanying drawing, provide description based on the monolithic filter component of acoustic boundary wave, integrated with MEMS switches according to preferred embodiment of the present invention.
Fig. 1 is the vertical view that is used to explain according to the preferred embodiment of the monolithic filter component based on acoustic boundary wave, integrated with MEMS switches of the present invention.Wherein 1 be respectively ground floor, the second layer, the 3rd layer, the 4th layer filter for bank of filters, 1A, 1B, 1C, 1D; Be centered around 2,3,4,5,6,7,8,9 around 1 and be mems switch; Wherein 2,7 be respectively the ground floor filter input, output switch; 9,4 be respectively second layer filter input, output switch; 3,6 be respectively the 3rd layer of filter input, output switch, 8,5 are respectively input, the output switch of the 4th layer of filter; 10,12,15,17,19,21,22,24 is the grounding electrode end of bank of filters; 11,13,23,25 is the singal input electrode end of bank of filters; 14,16,18,20 is the signal output electrode end of bank of filters; 26,27,32,33 signal output electrode ends for the input mems switch; 28,29,30,31 singal input electrode ends for the output mems switch; 34,35,36,37 is the grounding electrode end of mems switch; 38,39,44,45 singal input electrode ends for the input mems switch; 40,41,42,43 signal output electrode ends for the output mems switch; 46,47,48,49,50,51,52,53 is the drive electrode end of mems switch; 54 for connecting lead-in wire; Mems switch and filter, each signal input output end of mems switch, earth terminal all are connected with lead-in wire with the encapsulation corresponding bonding pad.
The filter input/output port all is connected with mems switch, can improve the isolation between each filter like this.In transceiver, the input/output port of input and output mems switch, bank of filters relation can be exchanged, thereby realizes the control of filter assembly to receiving and transmitting signal.Driving voltage simultaneously to the corresponding input and output mems switch of each filter to controlling; When driving voltage is applied to the drive electrode of MEMS; 2 mems switch closures of gating, signal passes through from the corresponding filter of this mems switch, thereby realizes the gating of this road signal.
In this embodiment, the boundary wave filter construction is as shown in Figure 2, and the ground floor filter construction upwards was followed successively by the end of from: 59 substrates, 60 insulating barriers, 61 interdigital electrode layers, 62 piezoelectric layers, 63 absorbent treatments, 64 metal levels, 65 insulating barriers; The insulating barrier, other structures are not with the ground floor filter on having substrate, substrate for second layer filter; The maximum layer filter construction is followed successively by from bottom to top: 76 interdigital electrode layers, 77 piezoelectric layers, 78 insulating barriers.The not special restriction of the filter number of plies, but be generally less than 4 layers.Like the needs more filter of arranging, can in same plane, arrange a plurality of stratiform bank of filters.
Insulating barrier 60 mainly is the insulating properties that is used to improve electrode substrate on the substrate base 59, suitably selects material, can also improve the temperature stability of device, the velocity of sound of piezoelectric membrane; Interdigital electrode layer 61 is used for excitation and receives sound wave, thereby realizes filtering, is the main design part of boundary wave filter, is directly connected to the frequency response characteristic of filter; Piezoelectric layer 62 is equivalent to the piezoelectric substrate of SAW filter, and its quality and high orientation are the guarantees of high performance filter; Absorbent treatment 63 is used for sound wave is decayed, and prevents that sound wave is leaked to the upper strata filter, thus the clutter reduction signal; Metal level 64 is used for electromagnetic shielding, prevent that electromagnetism is straight-through, thereby the band that improves filter suppresses outward, and it can also play the effect of heat radiation in addition; Insulating barrier 65 can serve as the substrate of second layer filter.
For compatible with semiconductor technology, filter assembly is preferably disposed on the silicon chip; Insulating barrier 60,65,70,75,78 materials are insulation and the material that certain degree of hardness is arranged, and in this preferred embodiment, select silicon nitride; The not special restriction of boundary wave filter electrode 61,66,71,76 materials, but aluminium or copper product preferably used; Piezoelectric layer 62,67,72,77 is the piezoelectricity material, in this preferred embodiment, adopts the zinc oxide material with (002) preferred orientation; Absorbent treatment 63,68,73 has than the material of high attenuation like silicones, polyurethane, polyimides for the transmission to sound wave.The material consistent with the filter electrode material generally selected in the not special restriction of metal level 64,69,74 materials for use.
In this embodiment, each layer of boundary wave filter filter area upwards reduces the end of from successively, can make the extraction electrode 87,88,89,90 of filters at different levels be exposed to the outside like this, conveniently is connected with the signal of mems switch.Specifically as shown in Figure 3, be example with filter 55 and 56, filter 56 piezoelectric layers 80 wide less than the insulating barrier under it, thus make first order filter signal extraction electrode 87 be able to be exposed to the outside.The length of filter 57 piezoelectric layers 82 is less than the insulating barrier under it, thereby makes second level filter signal extraction electrode 88 be able to be exposed to the outside.The third level, fourth stage filter area size are arranged and are so analogized.
In this preferred embodiment, filter construction can be selected according to the filter assembly index request, can be structures such as transversal filter, unidirectional single phase filter, ladder-type filter, vertical coupling filter.The size of filter is by the operating frequency and the filter construction decision of piezoelectric layer material, filter.Generally at 2mm*2mm between the 3cm*3cm.The filter height is generally less than 1mm by the filter number of plies and the decision of layers of material thickness.
In this preferred embodiment, between each layer filter interdigital electrode and arranging between the extraction electrode stagger each other, avoid the excessive parasitic capacitance of the overlapping introducing of a large amount of electrodes, thereby reduce the outer inhibition level of band of filter.
The boundary wave filter is generally operational in tens megahertzes between the number GHz, so should select suitable mems switch structure, makes it that switching characteristic preferably arranged in this frequency range.What this preferred embodiment was selected for use is rigid fixed bridge formula structure, like Fig. 4, shown in Figure 5.This structure driving voltage is low, and driving voltage is less than 20V; It is less in the DC-3GHz frequency range, to insert loss, inserts loss less than 0.5dB; Isolation is higher, and isolation is greater than 65dB; And long switch life is arranged, and the switch number of times is greater than 5,000,000 times, and each item index all satisfies the demand of filter assembly.
In this preferred embodiment, between the 1mm*1mm, height is less than 100um at 0.4mm*0.4mm for the mems switch area, and device size satisfies the needs of arranging around filter, and element height satisfies the needs of wire bonds.
Fig. 4 is the sectional view of mems switch in the preferred embodiment, and switch upwards is followed successively by insulating barrier 95, supporting layer 92, output signal electrode layer 93, the bridge rete 94 on substrate base 59, insulating barrier 60, metal electrode layer 91, the drive electrode end of from.Wherein 96 is that drive electrode, 97 is that singal input electrode, 98 is that signal connects salient point, and 99 is signal output electrode.
Fig. 5 is followed successively by: drive electrode 100, input signal electrode 101, bridge rete 102, output signal electrode 103 for the vertical view of mems switch in the preferred embodiment from left to right.
Mems switch substrate base 59 is consistent with filter, and insulating barrier 60 mainly is to be used to improve the insulating properties of electrode substrate and salient point to be provided for the making of electrode salient point on it; Metal electrode 91 mainly comprises drive electrode 95, singal input electrode 97 and co-planar waveguide; Drive electrode and the direct of signal output electrode contact when preventing switch closure, on drive electrode, deposit a layer insulating 95; Supporting layer 92 plays the effect that cavity structure is supported, and its material is consistent with sacrifice layer, can control the size of cavity release time through the control sacrifice layer; Top layer electrode 99 is as signal output electrode; Bridge rete 94 plays the supporting role to the top layer electrode, prevents that the electrode of cavity part from caving in.
Insulating barrier 60 materials are insulation and the material that certain degree of hardness is arranged on the mems switch substrate, in this embodiment, adopt silicon nitride; The not special restriction of electrode layer 91,93 materials, but because gold electrode has excellent contact characteristic and less contact resistance, so preferably use gold copper-base alloy; Dielectric insulation layer 95 is selected silicon nitride material for use; The material of cavity pillar 92 and sacrifice layer is a polyimides; Bridge rete 94 is the low stress dielectric material, selects silicon oxynitride here.
In this preferred embodiment, the detailed manufacture craft of the acoustic boundary wave filter assembly of integrated with MEMS switches is described below, and the making and the mems switch that mainly are divided into the boundary wave filter are made two parts:
At first carry out the making of boundary wave filter:
1. adopt PECVD grown silicon nitride insulating barrier 60 at silicon substrate, thickness needs greater than 500nm, then the spin coating photoresist; Photoresist thickness is greater than 1 μ m; Make the filter figure by lithography, adopt direct current sputtering or radio frequency sputtering to prepare metal film, metal film thickness is about 2% of a length of the interfacial wave; Remove unnecessary photoresist and electrode with acetone then, thereby obtain filter electrode figure 61;
2. spin coating photoresist on the interdigital electrode layer removes unnecessary photoresist through photoetching, only stays the photoresist on the electrode leads to client 87.On the filter electrode figure, adopt RF sputtering method, preparation has the zinc oxide piezoelectric film 62 of preferred orientation, and film thickness greater than 5 boundary wave wavelength, is removed all photoresists usually then, exposes extraction electrode.Subsequently, utilize chemico-mechanical polishing (CMP) or eat-back (etch-back) technological polishing film, remove because the piezoelectric film ledge that interdigital electrode causes;
3. spin coating one deck toughness photoresist on piezoelectric layer; The piezoelectric layer figure is exposed in photoetching, and spin coating one deck polyimides absorbent treatment 63 then, and absorbent treatment is with than Bao Weijia; Remove the corrosive gas in the absorbent treatment through vacuum degassing process then, prevent its corrosion electrode;
4. sputter production layer of metal layer 64 on absorbent treatment, metal layer thickness is about 100nm;
5. on metal level, adopt PECVD to prepare one deck silicon nitride film 65, thickness is about 400nm.Remove photoresist and unnecessary film material with acetone, thereby accomplish the making of ground floor filter.
After ground floor filter 55 has been made, on continue to make second layer filter 56,1. concrete manufacture method repeat-5..Last layer filter 58 be not except that having absorbent treatment and metal level, and other steps are made consistent with the ground floor filter.After in the end one deck filter completes, accomplish the making of filter.
After filter completes, begin to make mems switch, mems switch is made and may further comprise the steps:
1. in the making of filter, accomplished the making of MEMS insulating barrier silicon nitride film 60; Apply photoresist on the silicon nitride layer, unnecessary photoresist is removed in photoetching, makes filter and switch salient point figure obtain the protection of photoresist; With hydrofluoric acid silicon nitride layer is carried out corrosion thinning; After removing photoresist, obtain salient point, bump height is greater than 300nm;
2. on above-mentioned silicon nitride layer 60, apply photoresist, photoetching above that then; Expose co-planar waveguide and bottom electrode figure 91; Adopt direct current sputtering or radio frequency sputtering to prepare lower electrode layer 91, thickness of electrode is removed unnecessary photoresist and redundance electrode then greater than 1 μ m;
3. after above-mentioned photoetching process, on bottom electrode, apply photoresist, unnecessary photoresist is removed in photoetching; Expose the exciting electrode figure; Adopt PECVD on exciting electrode, to grow one deck silicon nitride as electrode gap absciss layer 95 then, film thickness is about 200nm, removes whole photoresists subsequently;
4. after above-mentioned photoetching process, spin coating one deck photoresist once more, mems switch part photoresist is removed in photoetching, and spin coating one deck polyimides is removed unnecessary photoresist and polyimides then as sacrifice layer and supporting layer 92 then;
5. on above-mentioned sacrifice layer, apply photoresist, contacting metal, top electrode figure are exposed in photoetching, and direct current sputtering growth electrode layer 93 is removed photoresist and electrode redundance then, obtains signal output electrode and electrode layer release window;
6. on top electrode, apply photoresist, make the figure of release window by lithography, the release window position consistency of release window position needs and signal output electrode layer.Adopt PECVD to prepare silicon oxynitride rete 94, the bridge thicknesses of layers is about 600nm, removes unnecessary photoresist and bridge film then, obtains release window;
7. use oxygen plasma etch, releasing sacrificial layer obtains the air gap structure, accomplishes mems switch and makes;
After accomplishing above-mentioned steps; Die bonding on the encapsulation shell, is utilized pressure welding, the signal output electrode of input mems switch and the singal input electrode of acoustic boundary wave filter are linked together with lead-in wire; The signal output electrode of the singal input electrode of output mems switch and acoustic boundary wave filter links together; And corresponding bonding pad is gone up in other electrodes and encapsulation weld, block encapsulates at last, thereby accomplishes the making of filter assembly.
Claims (3)
1. the monolithic filter component based on acoustic boundary wave, integrated with MEMS switches comprises some acoustic interface filters and mems switch, it is characterized in that:
1. said acoustic interface filter sets gradually substrate, insulating barrier, filter electrode layer, piezoelectric film and insulating barrier from bottom to up, also comprises singal input electrode, signal output electrode, absorbent treatment and metal level;
2. said mems switch comprises grounding electrode, exciting electrode, singal input electrode, signal output electrode, also comprises the salient point that is arranged on the signal contact zone, the cavity pillar under the signal output electrode, the bridge rete on the output electrode, the dielectric insulation layer on exciting electrode;
3. this assembly by one group or several groups of mutual vertical arrangements and the above-mentioned acoustic interface filter that becomes layer structure be distributed in every group of acoustic interface filter around corresponding mems switch integrated; The singal input electrode of mems switch, signal output electrode, grounding electrode all are connected with lead-in wire with the encapsulation corresponding bonding pad; The signal output electrode of filter is through the singal input electrode of lead-in wire connection mems switch, and the singal input electrode of filter connects the signal output electrode of mems switch through lead-in wire.
2. manufacture method based on the monolithic filter component of acoustic interface filter, integrated with MEMS switches, this method are made acoustic interface filter earlier, make mems switch then, specifically may further comprise the steps:
(1) the acoustic interface filter is made and may further comprise the steps:
1. growth high rigidity insulating barrier on substrate utilizes stripping technology then, the spin coating photoresist, and filter anti-phase figure is exposed in photoetching, and sputter prepares metal film, removes unnecessary photoresist and electrode, obtains the filter electrode figure;
2. utilize stripping technology, spin coating photoresist on the filter electrode figure, unnecessary photoresist is removed in photoetching; Only stay the photoresist on the extraction electrode; The sputter preparation has the piezoelectric film of preferred orientation, removes photoresist, and exposes extraction electrode; Utilize chemico-mechanical polishing or etch-back techniques polishing film then, remove because the piezoelectric film that interdigital electrode causes is uneven;
3. adopt 2. identical stripping technology, extraction electrode is lived in protection with photoresist, on piezoelectric film, prepares absorbent treatment, metal level and high rigidity insulating barrier then;
4. after ground floor acoustic interface filter has been made; On continue to make second layer acoustic interface filter, each acoustic interface filter is vertical arrangement or stacked arrangement each other, 1. concrete manufacture method repeat-3.; After in the end one deck filter completes, accomplish the making of filter;
(2) mems switch is made and may further comprise the steps:
1. on the insulating material on the substrate, apply photoresist, the photoresist of mems switch position is removed in photoetching, on insulating barrier, makes the salient point figure by lithography, and insulating barrier is carried out corrosion thinning, obtains salient point, removes photoresist;
2. on above-mentioned insulating barrier, apply photoresist, make co-planar waveguide and bottom electrode figure then above that by lithography, the preparation lower electrode layer is removed unnecessary photoresist and redundance electrode;
3. after above-mentioned photoetching process, on bottom electrode, apply photoresist, unnecessary photoresist is removed in photoetching, exposes the exciting electrode figure, and growth one deck electrode gap absciss layer on exciting electrode is removed whole photoresists subsequently then;
4. after above-mentioned steps, spin coating one deck photoresist again, mems switch part photoresist is removed in photoetching, prepares sacrifice layer and supporting layer then, and removes unnecessary photoresist and sacrificial layer material;
5. on above-mentioned sacrifice layer, apply photoresist, make contacting metal, top electrode figure by lithography, sputter growth electrode layer is removed photoresist and electrode redundance then, obtains top electrode and electrode layer release window;
6. on top electrode, apply photoresist, make the figure of release window by lithography, preparation bridge rete is removed unnecessary photoresist and bridge film then, obtains bridge mould layer release window;
7. releasing sacrificial layer obtains the air gap structure, accomplishes mems switch and makes;
(3) encapsulation:
Utilize pressure welding; With lead-in wire the signal output electrode of input mems switch and the singal input electrode of acoustic boundary wave filter are linked together; The signal output electrode of the singal input electrode of output mems switch and acoustic boundary wave filter links together; And corresponding bonding pad is gone up in other electrodes and encapsulation weld, block encapsulation at last.
3. the manufacture method of the monolithic filter component based on acoustic interface filter, integrated with MEMS switches according to claim 2; It is characterized in that; Sacrifice layer discharges and adopts wet etching or plasma etching in the mems switch making step; If expendable material is germanium metal or silicon dioxide, then adopt wet etching, corrosive agent is dilution hydrogen peroxide solution or dilute hydrofluoric acid solution; If expendable material is a polyimides, then adopt the oxygen plasma etching.
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