CN101677234A - High frequency surface acoustic wave element - Google Patents
High frequency surface acoustic wave element Download PDFInfo
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- CN101677234A CN101677234A CN200810160835A CN200810160835A CN101677234A CN 101677234 A CN101677234 A CN 101677234A CN 200810160835 A CN200810160835 A CN 200810160835A CN 200810160835 A CN200810160835 A CN 200810160835A CN 101677234 A CN101677234 A CN 101677234A
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Abstract
The invention provides a high frequency surface acoustic wave element, in particular to the high frequency surface acoustic wave element of which the central frequency can be adjusted easily by adjusting the thickness of the nano diamond film layer contained therein. The high frequency surface acoustic wave element in the invention comprises a silicon substrate, a nano diamond film layer, a piezoelectric layer, an input transformation part and an output transformation part, wherein, the nano diamond film layer is arranged on the silicon substrate, the piezoelectric layer is formed on the surface of the nano diamond film layer; and the input transformation part and the output transformation part are arranged on the surface or below the piezoelectric layer in pairs; in addition, the thickness of the nano diamond film layer is better to be between 0.5mu m and 20mu m; the materials of the piezoelectric layer are better to comprise zinc oxide, aluminium nitride or lithium niobate; and the thickness of the piezoelectric layer is better to be between 0.5mu m and 5mu m.
Description
Technical field
The present invention relates to a kind of high-frequency surface acoustic wave element, refer to a kind of thickness of nanometer diamond rete that can be by adjusting its tool especially and adjust the high-frequency surface acoustic wave element of its centre frequency easily.
Background technology
Surface acoustic wave element is because material science and technology full-fledged, can be as filter, and this kind surface acoustic wave filter has been widely used in mobile communication technology now.Moreover surface acoustic wave element is because have low-loss, high attenuation characteristic and compact advantage, and its application in wireless communications products is also healed and is become extensive.But with regard to the lithium niobate monocrystal substrate of normal use, if will reach the centre frequency of 1800MHz, live width of its input converter section and output converter section must reach 0.5 μ m with regard to present surface acoustic wave element.Though this live width is quite easy for semiconductor technology now, general contact exposure machine still can't satisfy this specification.On the other hand, for the application of further enlarged surface acoustic wave filter, all circles manage to adjust the centre frequency numerical value of surface acoustic wave filter invariably.
Shown in Figure 1A and Figure 1B figure, existing high-frequency surface acoustic wave element is one to have the element of a piezoelectric substrate 11, an input converter section 12 and an output converter section 13, and input converter section 12 and output converter section 13 are arranged at the surface of piezoelectric substrate 11 in couples.Wherein, the material of piezoelectric substrate 11 is quartz, lithium niobate (LiNbO3) or lithium tantalate (LiTaO3).And, in case after input converter section 12 determined with the live width of output converter section 13, the centre frequency of existing high-frequency surface acoustic wave element just was determined and can't adjusts easily.That is to say,, only adjust live width one way of input converter section 12 and output converter section 13 at present if will change the centre frequency of existing high-frequency surface acoustic wave element.Moreover, if will change the live width of input converter section with the output converter section of existing high-frequency surface acoustic wave element, certainly will additionally make the light shield of the pattern of the different live widths of another tool, in the reasonable time of not only will expending, also additionally increase many costs.
Therefore, industry needs a kind of thickness of nanometer diamond rete that can be by adjusting its tool and adjusts the high-frequency surface acoustic wave element of its centre frequency easily, with regard to piezoelectric film type layer structure surface acoustic wave element, though the adjustment of centre frequency can be reached by the thickness that changes piezoelectric layer; Yet, depend on the intervention of high-sound-velocity material in fact, as proposed by the present invention the nanometer diamond rete if will improve centre frequency significantly.
Summary of the invention
Main purpose of the present invention provides a kind of high-frequency surface acoustic wave element, so that can pass through the thickness of the nanometer diamond rete of its tool of adjustment, adjusts its centre frequency easily.
Secondary objective of the present invention provides a kind of high-frequency surface acoustic wave element, so that can simplify the program of adjusting its centre frequency, increases the application elasticity of high-frequency surface acoustic wave element.
For reaching above-mentioned purpose, the invention provides a kind of high-frequency surface acoustic wave element, comprising: a silicon substrate; One nanometer diamond rete is to be positioned on this silicon substrate; One piezoelectric layer is formed at the surface of this nanometer diamond rete; One input converter section; And one output converter section; Wherein, this input converter section is exported the surface that converter section is arranged at this piezoelectric layer in couples therewith.
For reaching above-mentioned purpose, the present invention provides a kind of high-frequency surface acoustic wave element in addition, comprising: a silicon substrate; One nanometer diamond rete is positioned on this silicon substrate; One piezoelectric layer is formed at the surface of this nanometer diamond rete; One input converter section; And one output converter section; Wherein, this input converter section is exported the surface that converter section is arranged at this nanometer diamond rete in couples therewith, and this piezoelectric layer covers between this input converter section and exports nanometer diamond rete part surface between the converter section therewith.
Therefore, high-frequency surface acoustic wave element of the present invention can pass through the thickness of the nanometer diamond rete of its tool of adjustment, adjust its centre frequency easily, change its centre frequency by changing its mode of importing the live width of converter section and its output converter section with being scared and need not to expend.So, adjust the program of the centre frequency of high-frequency surface acoustic wave element of the present invention and just can significantly simplify, the time that only need adjust the nanometer diamond film deposition gets final product, and significantly increases the application elasticity of high-frequency surface acoustic wave element of the present invention.
High-frequency surface acoustic wave element of the present invention can use the silicon substrate of any kenel, and it is preferably a silicon (100) chip.The nanometer diamond rete of high-frequency surface acoustic wave element of the present invention can have any thickness, and its thickness is preferable between 0.5 μ m to 20 μ m.The piezoelectric layer of high-frequency surface acoustic wave element of the present invention can have any material, and its material is preferably zinc oxide, aluminium nitride or lithium niobate.The piezoelectric layer of high-frequency surface acoustic wave element of the present invention can be formed at the surface of nanometer diamond rete by any way, and its preferable mode with radio frequency magnetron sputter, electron beam evaporation plating, chemical vapour deposition technique, excimer laser vapour deposition method, sol-gel process, molecular beam epitaxy method, physical vaporous deposition or chemical vapour deposition (CVD) is formed at the surface of nanometer diamond rete.The input converter section of high-frequency surface acoustic wave element of the present invention can have any live width respectively with the output converter section, and their live width is preferable between 0.5 μ m to 5 μ m.The input converter section of high-frequency surface acoustic wave element of the present invention and output converter section can have any material, and their material is preferably aluminium, and its thickness is preferable between 50nm to 200nm.
Description of drawings
Figure 1A is the schematic perspective view of existing high-frequency surface acoustic wave element;
Figure 1B is the generalized section along AA ' the line gained of Figure 1A;
Fig. 2 A is the schematic perspective view of the high-frequency surface acoustic wave element of one embodiment of the invention;
Fig. 2 B is the generalized section along BB ' the line gained of Fig. 2 A;
Fig. 2 C is the schematic diagram of spectral response measurement that shows the high-frequency surface acoustic wave element of one embodiment of the invention;
Fig. 2 D is the schematic diagram that shows that the pass of the centre frequency of high-frequency surface acoustic wave element of one embodiment of the invention and its nanometer diamond thicknesses of layers is;
Fig. 3 A is the schematic perspective view of the high-frequency surface acoustic wave element of another embodiment of the present invention;
Fig. 3 B is the generalized section along CC ' the line gained of Fig. 3 A;
Fig. 3 C is the schematic diagram of spectral response measurement that shows the high-frequency surface acoustic wave element of another embodiment of the present invention;
Fig. 3 D is the schematic diagram that shows that the pass of the centre frequency of high-frequency surface acoustic wave element of another embodiment of the present invention and its nanometer diamond thicknesses of layers is.
[main element symbol description]
11 piezoelectric substrates
12,24,34 input converter sections
13,25,35 output converter sections
21,31 silicon substrates
22,32 nanometer diamond retes
23,33 piezoelectric layers
Embodiment
Embodiment 1
See also Fig. 2 A and Fig. 2 B, wherein Fig. 2 A is the schematic perspective view of the high-frequency surface acoustic wave element of one embodiment of the invention, and Fig. 2 B is the generalized section along BB ' the line gained of Fig. 2 A.The high-frequency surface acoustic wave element of one embodiment of the invention is one to have the element of a silicon substrate 21, a nanometer diamond rete 22, a piezoelectric layer 23, an input converter section 24 and an output converter section 25, and input converter section 24 and output converter section 25 are arranged at the surface of piezoelectric layer 23 in couples.Wherein, in the present embodiment, the material of piezoelectric layer 23 is zinc oxide (ZnO), and it is the surface that is formed at nanometer diamond rete 22 by the mode of radio frequency magnetron sputter.As for the parameters of radio frequency magnetron sputtering process, shown in the then following tabulation 1:
Table 1:
| The target kind | The zinc oxide target of lithium deposition |
| Distance between target-substrate | ??43mm |
| Substrate temperature | ??380℃ |
| The sputter gas flow ratio | Argon gas/oxygen=1 |
| Radio-frequency power | 178 |
| Sedimentation time | |
| 30 minutes | |
| Chamber pressure during deposition | ??10mtorr |
| Deposit thickness | ??1.2μm |
Then, be coated with the surface of photoresistance in piezoelectric layer 23 again, then form the interdigital electrode pattern with the gold-tinted lithography process through exposure imaging, evaporation is about the aluminium lamination of 100nm thickness in the photoresistance of aforesaid tool pattern again.At last, after removing unwanted aluminium lamination and shake the cleaning photoresist layer with lift-off method (lift-off) again, form input converter section 24 and output converter section 25 respectively in the surface of piezoelectric layer 23.
The thickness of nanometer diamond rete 22 of finishing the high-frequency surface acoustic wave element of aforesaid technology gained is about 5 μ m, the thickness of the piezoelectric layer 23 of its zinc oxide material is about 1.2 μ m, its input converter section 24 is an aluminium with the material of output converter section 25, and their live width then is about 5 μ m.And the frequency response of this high-frequency surface acoustic wave element is just shown in Fig. 2 C, and its centre frequency is about 255.84MHz.
On the other hand, by the step identical, form two high-frequency surface acoustic wave elements that have the nanometer diamond rete of different-thickness respectively in addition with aforesaid technology.In these two high-frequency surface acoustic wave elements, the thickness of nanometer diamond rete is about 2.1 μ m and 4.3 μ m respectively.In addition, the material and the size of these all the other each component units of two high-frequency surface acoustic wave elements (as silicon substrate, piezoelectric layer, input converter section and output converter section), all the high-frequency surface acoustic wave element with one embodiment of the invention is identical.Then, measure the surface wave velocity of sound (phase velocity) of these two high-frequency surface acoustic wave elements, two surface wave velocity of sound numerical value of gained merge with the surface wave velocity of sound numerical value of the high-frequency surface acoustic wave element of one embodiment of the invention again, just obtain the curve of Fig. 2 D.
From Fig. 2 D as can be seen, the high-frequency surface acoustic wave element of one embodiment of the invention can only pass through the mode of the thickness of its nanometer diamond rete of adjustment, change the numerical value (also changing the numerical value of its centre frequency simultaneously) of its surface wave velocity of sound, and need not to change the material and the size of all the other component units (as silicon substrate, piezoelectric layer, input converter section and output converter section).
Embodiment 3
See also Fig. 3 A and Fig. 3 B, wherein Fig. 3 A is the schematic perspective view of the high-frequency surface acoustic wave element of another embodiment of the present invention, and Fig. 3 B is the generalized section along CC ' the line gained of Fig. 3 A.The high-frequency surface acoustic wave element of another embodiment of the present invention is one to have the element of a silicon substrate 31, a nanometer diamond rete 32, a piezoelectric layer 33, an input converter section 34 and an output converter section 35, wherein import the surface that converter section 34 and output converter section 35 are arranged at nanometer diamond rete 32 in couples, and piezoelectric layer 33 covers nanometer diamond rete 32 part surfaces between input converter section 34 and output converter section 35.
In addition, in the present embodiment, the coating photoresistance then forms the interdigital electrode pattern with the gold-tinted lithography process through exposure imaging in the surface of nanometer diamond rete 32 earlier, and evaporation is about the aluminium lamination of 100nm thickness in the photoresistance of aforesaid tool pattern again.At last, after removing unwanted aluminium lamination and shake the cleaning photoresist layer with lift-off method (lift-off) again, form input converter section 34 and output converter section 35 respectively in the surface of nanometer diamond rete 32.Then, the piezoelectric layer 33 that forms zinc oxide (ZnO) material in the mode of radio frequency magnetron sputter makes piezoelectric layer 33 cover between input converter section 34 and nanometer diamond rete 32 part surfaces of exporting between the converter section 35 in the surface of nanometer diamond rete 32 again.As for the parameters of radio frequency magnetron sputtering process, then as described above shown in the table 1:
The thickness of nanometer diamond rete 32 of finishing the high-frequency surface acoustic wave element of aforesaid technology gained is about 3.6 μ m, the thickness of the piezoelectric layer 33 of its zinc oxide material is about 1.2 μ m, its input converter section 34 is an aluminium with the material of output converter section 35, and their live width then is about 5 μ m.And the frequency response of this high-frequency surface acoustic wave element is just shown in Fig. 3 C, and its centre frequency is about 425.225MHz.
On the other hand, by the step identical, form two high-frequency surface acoustic wave elements that have the nanometer diamond rete of different-thickness respectively in addition with aforesaid technology.In these two high-frequency surface acoustic wave elements, the thickness of nanometer diamond rete is about 4.3 μ m and 5.0 μ m respectively.In addition, the material and the size of these all the other each component units of two high-frequency surface acoustic wave elements (as silicon substrate, piezoelectric layer, input converter section and output converter section), all the high-frequency surface acoustic wave element with another embodiment of the present invention is identical.Then, measure the surface wave velocity of sound (phase velocity) of these two high-frequency surface acoustic wave elements, two surface wave velocity of sound numerical value of gained merge with the surface wave velocity of sound numerical value of the high-frequency surface acoustic wave element of another embodiment of the present invention again, just obtain the curve of Fig. 3 D.
Can find out from Fig. 3 D, the high-frequency surface acoustic wave element of another embodiment of the present invention can only pass through the mode of the thickness of its nanometer diamond rete of adjustment, change the numerical value (also changing the numerical value of its centre frequency simultaneously) of its surface wave velocity of sound, and need not to change the material and the size of all the other component units (as silicon substrate, piezoelectric layer, input converter section and output converter section).
In sum, high-frequency surface acoustic wave element of the present invention can pass through the thickness of the nanometer diamond rete of its tool of adjustment, adjust its centre frequency easily, change its centre frequency by changing its mode of importing the live width of converter section and its output converter section with being scared and need not to expend.So, adjust the program of the centre frequency of high-frequency surface acoustic wave element of the present invention and just can significantly simplify, the time that only need adjust the nanometer diamond film deposition gets final product, and significantly increases the application elasticity of high-frequency surface acoustic wave element of the present invention.
The foregoing description only is to give an example for convenience of description, and the interest field that the present invention advocated should be as the criterion so that claim is described certainly, but not only limits to the foregoing description.
Claims (16)
1, a kind of high-frequency surface acoustic wave element is characterized in that comprising:
One silicon substrate;
One nanometer diamond rete is positioned on this silicon substrate;
One piezoelectric layer is formed at the surface of this nanometer diamond rete;
One input converter section; And
One output converter section;
Wherein, this input converter section and this output converter section are the surfaces that is arranged at this piezoelectric layer in couples.
2, high-frequency surface acoustic wave element as claimed in claim 1 is characterized in that, this silicon substrate is a silicon (a 100) chip.
3, high-frequency surface acoustic wave element as claimed in claim 1 is characterized in that, the thickness of this nanometer diamond rete is between 0.5 μ m to 20 μ m.
4, high-frequency surface acoustic wave element as claimed in claim 1 is characterized in that, this piezoelectric layer is the surface that is formed at this nanometer diamond rete by the radio frequency magnetron sputtering method.
5, high-frequency surface acoustic wave element as claimed in claim 1 is characterized in that, the material of this piezoelectric layer is zinc oxide, aluminium nitride or lithium niobate.
6, high-frequency surface acoustic wave element as claimed in claim 1 is characterized in that, the live width of this input converter section and this output converter section is between 0.5 μ m to 5 μ m.
7, high-frequency surface acoustic wave element as claimed in claim 1 is characterized in that, this input converter section and this output converter section are respectively an interdigital electrode.
8, high-frequency surface acoustic wave element as claimed in claim 1 is characterized in that, the material of this input converter section and this output converter section is an aluminium.
9, a kind of high-frequency surface acoustic wave element is characterized in that comprising:
One silicon substrate;
One nanometer diamond rete is positioned on this silicon substrate;
One piezoelectric layer is formed at the surface of this nanometer diamond rete;
One input converter section; And
One output converter section;
Wherein, this input converter section and this output converter section are arranged at the surface of this nanometer diamond rete in couples, and this piezoelectric layer covers the nanometer diamond rete part surface between this input converter section and this output converter section.
10, high-frequency surface acoustic wave element as claimed in claim 9 is characterized in that, this silicon substrate is a silicon (a 100) chip.
11, high-frequency surface acoustic wave element as claimed in claim 9 is characterized in that, the thickness of this nanometer diamond rete is between 0.5 μ m to 20 μ m.
12, high-frequency surface acoustic wave element as claimed in claim 9 is characterized in that, this piezoelectric layer is the surface that is formed at this nanometer diamond rete by the radio frequency magnetron sputtering method.
13, high-frequency surface acoustic wave element as claimed in claim 9 is characterized in that, the material of this piezoelectric layer is zinc oxide, aluminium nitride or lithium niobate.
14, high-frequency surface acoustic wave element as claimed in claim 9 is characterized in that, the live width of this input converter section and this output converter section is between 0.5 μ m to 5 μ m.
15, high-frequency surface acoustic wave element as claimed in claim 9 is characterized in that, this input converter section and this output converter section are respectively an interdigital electrode.
16, high-frequency surface acoustic wave element as claimed in claim 9 is characterized in that, the material of this input converter section and this output converter section is an aluminium.
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| CN200810160835A CN101677234A (en) | 2008-09-16 | 2008-09-16 | High frequency surface acoustic wave element |
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| CN200810160835A CN101677234A (en) | 2008-09-16 | 2008-09-16 | High frequency surface acoustic wave element |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018137549A1 (en) * | 2017-01-30 | 2018-08-02 | Huawei Technologies Co., Ltd. | Surface acoustic wave device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018137549A1 (en) * | 2017-01-30 | 2018-08-02 | Huawei Technologies Co., Ltd. | Surface acoustic wave device |
| US10594292B2 (en) | 2017-01-30 | 2020-03-17 | Huawei Technologies Co., Ltd. | Surface acoustic wave device |
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Open date: 20100324 |