CN101677119A - White light-emitting diode - Google Patents
White light-emitting diode Download PDFInfo
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- CN101677119A CN101677119A CN200810215284A CN200810215284A CN101677119A CN 101677119 A CN101677119 A CN 101677119A CN 200810215284 A CN200810215284 A CN 200810215284A CN 200810215284 A CN200810215284 A CN 200810215284A CN 101677119 A CN101677119 A CN 101677119A
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- 239000002245 particle Substances 0.000 claims abstract description 24
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 104
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 238000000605 extraction Methods 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract 4
- 230000003287 optical effect Effects 0.000 description 9
- 230000005855 radiation Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000007598 dipping method Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 125000001475 halogen functional group Chemical group 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000001795 light effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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Abstract
The invention provides a white light-emitting diode (WLED), comprising a base, a base crystal cup, a chipset, a transparent light-guiding layer and a fluorophor lens, wherein, the chipset is adhered to the reflecting bottom surface of the base crystal cup at the top of the base and electrically connected with the pins of the base via leads; the transparent light-guiding layer is fixedly arranged in the base crystal cup; the fluorophor lens is fixedly arranged at the upper part of the transparent light-guiding layer; and based on the design that the thickness of the transparent light-guiding layer of the base is higher than 500 mu m and the area ratio between the effective reflection area of the base crystal cup and the light-emitting surface area of the chipset is higher than 10, the reverse fluorescent light naturally radiated by fluorophor particles absorbing the exciting light emitted by the chipset is projected onto the effective reflecting area and further reflected into forward fluorescent light, so as to avoid the loss caused by the absorption of the chip to the reverse fluorescent light projected onto the chipset. Accordingly, the light extraction efficiency of the WLED canbe improved.
Description
Affiliated technical field
The present invention system is about a kind of light-emitting diode, particularly at the white light-emitting diode package structure design that can improve light extraction efficiency.
Background technology
Early stage white light emitting diode structure, the brilliant cup of a pedestal bottom surface that mainly lies in the pedestal chipset of adhering, chip in this chipset and see through lead and electrically connect pin in this pedestal, insert the direct coating chip group of phosphor body in the brilliant cup of this pedestal in addition, utilize the chip of chipset to launch specific coloured light, and the complementary colours principle that cooperates phosphor body, and produce white light.
Though aforementioned white light emitting diode can provide a kind of light-emitting diode component that produces white light, yet, the principle of luminosity of phosphor body radiating light is actually natural radiation (spontaneous emission), the fluorescent of its representative radiation will have the forward radiation fluorescent of part, referred to herein as the forward fluorescent; And the reverse radiation fluorescent of part, referred to herein as reverse fluorescent.System directly coats with phosphor body because of its chipset, so the phosphor body Partial Inverse can directly be projeced on the chip to the fluorescent that radiates, and is absorbed and then loss by chip.Except that reducing its total light emitting efficiency, because of chipset and phosphor body directly attach, the heat that its chipset is sent out will make phosphor body be heated and elevated temperature.Therefore the characteristics of luminescence of phosphor body own and life-span deterioration along with heating temperature all unfortunately can reduce the luminous efficiency of phosphor body again.
Be illustrated in figure 4 as the known light emitting diode construction of tradition, the brilliant cup of pedestal (61A) bottom surface that this light-emitting diode mainly lies in a pedestal (60A) the top chipset (70A) of adhering, the chip of this chipset (70A) and electrically connect pin in this pedestal (60A) with lead, and fill in the brilliant cup of this pedestal (61A) with a phosphor body (80A) that includes the fluorescent particle, in this chipset (70A) directly is coated on, with lens (90A) whole pedestal (60A) top and phosphor body (80A) are coated again at last.As the previous spouse of institute, this known techniques is heated because of the direct contact chip group (70A) of phosphor body (80A), makes phosphor body efficient and life-span deterioration.
Signal with reference to figure 6 operating principles, specular cross section in the brilliant cup of this pedestal (61B) is gone not quite mutually with chipset (70B) area size, so that when radiating forward fluorescent (42B) and reverse fluorescent (43B) after the exciting light (41B) that chipset sends absorbs via fluorescent particle (40B), this reverse fluorescent (43B) is projected to chipset (70B), and upward absorbed probability is higher, and only has the reverse fluorescent (43B) of minority ratio to be reflected into the forward fluorescent by the reflecting surface of the brilliant cup of pedestal (61B).
On the other hand, be confined in the brilliant cup of pedestal (61B) of smaller size smaller capacity because of phosphor body again, can only therefore phosphor body concentration must be promoted, so that the exciting light (41B) that chip sent is converted to suitable fluorescent in the phosphor body that wherein is coated with a little volume.But the phosphor body of this high concentration can cause another shortcoming, promptly be that this reverse fluorescent (43B) is when being reflected, stopped by this next-door neighbour's fluorescent particle (40B) again easily, thus this fluorescent that is reflected be difficult for passing through the high concentration phosphor body and launch in outside, and its light emitting efficiency is lived for a short period of time.
Hereat, at first shortcoming among above 2, the direct coating chip of phosphor body and be subjected to thermal degradation when, someone further is provided with thermal insulation layer in the brilliant cup of pedestal, and the fluorescent structural reform is located at the thermal insulation layer top locates, in the hope of improving the problem of aforementioned phosphor body because of the efficient of the low complementary coloured light of heat drop, as U.S. Pat 6,576, No. 930 " Light-radiating semiconductorcomponent with a luminescence conversion element " patent case those disclosed herein, as shown in Figure 5, the brilliant cup of pedestal (61) bottom surface that this light-emitting diode mainly lies in a pedestal (60) the top chipset (70) of adhering, the chip of this chipset (70) and electrically connect pin in this pedestal (60) with lead, and set firmly transparent heat insulating barrier (611) with respect to chipset (70) top in this pedestal (60) top, be coated with a phosphor body (80) that includes the fluorescent particle again and be located on this transparent heat insulating barrier (611), this phosphor body (80) does not directly coat this chipset (70), with lens (90) brilliant cup of whole pedestal (61) and phosphor body (80) is coated at last again.
Take off in second known techniques (that shown in Figure 5) only, light-emitting diode is with the design of its phosphor body (80) in transparent heat insulating barrier (611) top, though can overcome the problem of phosphor body because of the efficient of the low fluorescent that sends of heat drop, but, phosphor body in this light-emitting diode is more or less the same with die size because of pedestal reflecting surface area size, the same ground can't have enough reflective surface areas to reflect reverse fluorescent (43B), and phosphor body concentration problem of too is arranged too.Be so known techniques equally still can't solve the not good shortcoming of luminous efficacy of aforementioned first known techniques.
Summary of the invention
The present invention's main purpose is to provide a kind of white light-emitting diodes, the uncommon not good shortcoming of luminous efficacy of improving previous existing white light-emitting diodes by this.
Take off purpose for before reaching, the designed white light-emitting diodes system of the present invention comprises:
One pedestal, it comprises the brilliant cup of a pedestal and is positioned at the top, and the brilliant cup of this pedestal has a reflection bottom face and is positioned at the bottom, and a sideswipe face is located on this reflection bottom face periphery, and the degree of depth of the brilliant cup of this pedestal is greater than 500 μ m;
One chipset, adhesion is fixed on the reflection bottom face in the brilliant cup of this pedestal, this chipset comprises at least one chip, this chip has a light emitting surface and is positioned at upper surface, the institute's lap that defines the reflection bottom face deduction chipset of the brilliant cup of this pedestal amasss, with perimeter sides be the specular cross section of the brilliant cup of this pedestal to the area summation of reflecting surface, and the brilliant cup of this pedestal specular cross section compares greater than 10 with the area of the light emitting surface area of chipset, and this chipset has two pins that two electrode contacts electrically connect this pedestal respectively;
One transparent light guide layer is to form in the brilliant cup of this pedestal, and direct coating chip group; And
One phosphor body lens are to set firmly on this transparent light guide layer, these phosphor body lens comprise lens and the fluorescent particle of evenly sneaking in these lens integrally formed, the fluorescent particle concentration in these phosphor body lens is below 20% (percentage by weight).
And the surface forms specific optical design curved surface on these fluorescent lens, and this particular optical design curved surface helps improving light extraction efficiency, and makes photochromic more even.
The present invention is by preceding taking off white light-emitting diode package structure design, compared to the white light emitting diode of prior art announcement, and the present invention's characteristics:
One. increase specular cross section: make the brilliant cup of this pedestal degree of depth greater than 500 μ m, and the area ratio of the specular cross section that makes the brilliant cup of pedestal and the light emitting surface area of chipset is greater than 10 times.So design can make the reverse fluorescent from the fluorescent particle emission, can make this reverse light have enough path diffusions to come by enough optical waveguide layer thickness, and reflective surface area and chipset area are than enough greatly the time, fluorescent is projected to the probability of effective reflecting surface again much larger than projecting chipset after diffusing to certain degree, the effective reflecting surface of the brilliant cup of this pedestal is reflected into the forward bright dipping once again with reverse light, formed the fluorescent that turns to after reflection, avoid the reverse light of too many ratio to be projected on the chipset and be absorbed, improve the ratio of effectively total bright dipping.
Two. phosphor body concentration reduces: the fluorescent particle concentration that order is arranged in the phosphor body lens of chipset light emitting surface top is below 20% (percentage by weight), reduce suitably that fluorescent that phosphor body sends is hindered shelves by next-door neighbour's fluorescent particle and the probability of loss is passed through this phosphor body and increased whole lighting efficiency in order to going out fluorescent.
Three. the phosphor body lens: known techniques is coated on light-emitting diode component inside with phosphor body, lens package is overlayed on the light-emitting diode component outside again.The present invention directly mixes the fluorescent particle as the optical lens design, and the phosphor body lens package is overlying on the light-emitting diode outside.Conveniently do optical design thus, avoid the not good lunar halo phenomenon of mixed light to reach optimal luminescent usefulness and best mixed light effect.Be not heated because the phosphor body lens do not have direct contact chip group in addition, keep fluorescent particle body preferable luminous efficiency and life-span.
Hereat, the designed white light emitting diode of the present invention has high light brightness, preferable life-span and more even colour mixture effect.
Description of drawings
Fig. 1 is the floor map of first preferred embodiment of white light emitting diode of the present invention.
Fig. 2 is that white light emitting diode preferred embodiment shown in Figure 1 is done different optical curvature design diagrams in the phosphor body lens.
Fig. 3 is the enforcement state reference map of white light emitting diode preferred embodiment shown in Figure 1 in the reverse radiation of fluorescent.
Fig. 4 is the floor map of known white light emitting diode.
Fig. 5 is the enforcement state reference map of another known white light emitting diode in anaclasis.
Fig. 6 is the view of known white light emitting diode in the reverse radiation of fluorescent.
The luminous efficiency chart that the different reflective surface areas of Fig. 7 compare.
The luminous efficiency chart of the different phosphor body concentration of Fig. 8.
[primary clustering symbol description]
(10) pedestal
(11) the brilliant cup of pedestal
(111) reflection bottom face
(112) sideswipe face
(113) transparent light guide layer
(12) pin (13) substrate
(20) chipset (21) chip
(23) lead
(30) phosphor body lens
(40) fluorescent particle (41) exciting light
(42) the reverse fluorescent of forward fluorescent (43)
(44) fluorescent that turns to after reflection
(60) the brilliant cup of pedestal (61) pedestal
(611) transparent heat insulating barrier
(70) chipset
(80) phosphor body (90) lens
(60A) the brilliant cup of pedestal (61A) pedestal
(70A) chipset
(80A) phosphor body (90A) lens
(61B) the brilliant cup of pedestal (70B) chipset
(40B) fluorescent particle
(41B) exciting light
(42B) forward fluorescent
(43B) reverse fluorescent
Embodiment
Extremely shown in Figure 2 as Fig. 1, system discloses two kinds of concrete feasible preferred embodiments of white light emitting diode of the present invention, by can see among the figure and, this white light emitting diode mainly is to comprise a pedestal (10), a chipset (20), a transparent light guide layer (113) and phosphor body lens (30), wherein:
This pedestal (10) comprises the brilliant cup of a pedestal (11) and is arranged in pedestal (10) top and two pins (12) insulation and is located at this pedestal (10) and extends to pedestal (10) outside, the brilliant cup of this pedestal (11) has a reflection bottom face (111) and a sideswipe face (112) is located on this reflection bottom face (111) periphery, and the degree of depth of the brilliant cup of this pedestal (11) is greater than 500 μ m.
This chipset (20) is that adhesion is fixed on the interior reflection bottom face (111) of the brilliant cup of this pedestal (10) pedestal (11), in this preferred embodiment, this chip (21) is that this reflection bottom face (111) central authorities are fixed in adhesion, the chip (21) of this chipset (20) and have a light emitting surface and be positioned at upper surface, make it launch the visible light of predetermined wavelength (as blue light from this light emitting surface, ... etc.), (the institute's lap that is reflection bottom face (111) deduction chipset (20) is long-pending for the specular cross section of the brilliant cup of described pedestal (10) pedestal (11), with the area summation of perimeter sides to reflecting surface (112)) with the area of the light emitting surface area of chipset (20) than greater than 10, this chipset (20) has two electrode contacts and connects two pins (12) of this pedestal (10) respectively by plain conductor (23), when this chipset (20) was one chip (21), this two electrode contact was located on this chip (21).This chipset (20) also can be plural chip (21), and can be connected to two pins (12) by the serial or parallel connection means.
This transparent light guide layer (113) is to form in the brilliant cup of pedestal (11), and with respect to chipset (20) top and direct coating chip group (20), this transparent light guide layer (113) can solidify the back by transparent adhesive tape and be formed, and this transparent light guide layer (113) thickness is greater than 500 μ m.These phosphor body lens (30) are the phosphor body optical module of a luminescence generated by light, and are fixedly arranged on the transparent light guide layer (113).These phosphor body lens (30) comprise lens and fluorescent particle (40) is evenly sneaked in these lens, this fluorescent particle (40) concentration is below 20% (percentage by weight), described lens can be thermosetting colloid (as epoxy resin, silicones etc.) or transparent adhesive tape formed thereby, this phosphor body lens (30) upper surface can form particular curvature according to the optical design of different demands, avoids the not good lunar halo phenomenon of mixed light to reach optimal luminescent usefulness and best mixed light effect.
In the aforementioned phosphor body lens (30), still can further comprise light diffusing agent and this fluorescent particle (40) is together evenly sneaked in these lens.
Preferred embodiment as shown in Figure 1, 2, this pedestal (10) is to comprise the brilliant cup of a substrate (13) and a pedestal (11) to be located on this substrate (13), this two pin (12) is that insulation is arranged on this substrate (13), reflection bottom face (111) from the brilliant cup of this pedestal (11) passes this substrate (13) bottom surface downwards, it can be seen through peg graft or the solid welding means are fixed on the circuit board of electronic installation (generally being referred to as DIP or TO-Can assembly).In addition, this two pin also can be arranged at both sides, forms the surface and is pasting the electrode pin of pattern (generally being referred to as the SMD assembly).
White light emitting diode of the present invention is by the assembling structure design that preceding tears off the seal, when using, seeing through grafting or solid welding mode is fixedly arranged on the circuit board of electronic installation, when this white light emitting diode controlled when luminous, system utilizes the chip in the chipset to send coloured light (for example blue light), fluorescent particle (for example gold-tinted) in the cooperation phosphor body lens utilizes the principle of its complementary light, making its light that passes through phosphor body lens (30) ejaculation is white light, wherein, this light-emitting diode utilizes fluorescent particle (40) concentration in these phosphor body lens (30) to be reduced to below 20% (percentage by weight), and utilize the effective light reflection surface of increase to amass the technological means such as optical design that reach special phosphor body lens, the reverse radiating light that reduction phosphor body lens are launched is by the probability of chipset absorption loss, and make fluorescent pass through the phosphor body of low concentration easily, in order to bright dipping.
On the other hand, as shown in Figure 3, the present invention's white light emitting diode more utilizes the brilliant cup of the pedestal of this pedestal (10) (11) degree of depth greater than 500 μ m, and the area ratio of the specular cross section that makes the brilliant cup of pedestal (10) pedestal (11) and the light emitting surface area of chipset (20) is greater than designs such as 10 times.After being absorbed by fluorescent particle (40), exciting light (41) that chipset (20) is sent radiates forward fluorescent (42) and reverse fluorescent (43), this reverse fluorescent (43) can be reflected by the reflection bottom face (111) or the sideswipe face (112) of the brilliant cup of this pedestal (11) again, become the fluorescent (44) that turns to after reflection, be absorbed loss to avoid too much reverse fluorescent (43) directly to be projeced on the chipset (20), to improve the probability of the effective bright dipping of forward.In addition, the present invention is more further verified by experiment, shown in Fig. 7 table:
Can learn in the luminous efficiency chart that is compared by the different reflective surface areas of Fig. 7 that the area of specular cross section and the light emitting surface area of chipset is than greater than 10 times the time, brightness can reach more than 57 (lm) relatively.And when this area added to 10 times than being doubled by script 3, its brightness was promoted to brightness 57 (lm) by script 52 (lm), had promoted 9.6% of brightness originally altogether approximately.
The light extraction efficiency influence that phosphor body concentration is caused is further verified in another experiment, shown in Fig. 8 table:
Can learn in the luminous efficiency chart by the different phosphor body concentration of Fig. 8 table that when the fluorescent particle concentration is 20% (percentage by weight) when following, its relative brightness can reach more than 45 (lm).And when weight concentration was reduced to 20% by script 50%, its brightness was promoted to brightness 48 (lm) by script 43 (lm), had also promoted 11.6% of brightness originally.
Therefore, the present invention sees through the combination of above technological means, can reach best light extraction efficiency about 15%～20%, can effectively improve the luminous efficacy of this white light emitting diode, hereat, the present invention is the encapsulating structure design of white light emitting diode by this, really can reach the practical function that improves luminous efficacy.
Claims (5)
1. white light emitting diode is to comprise:
One pedestal, it comprises the brilliant cup of a pedestal and is positioned at the top, and the brilliant cup of this pedestal has a reflection bottom face and is positioned at the bottom, and a sideswipe face is located on this reflection bottom face periphery, and the degree of depth of the brilliant cup of this pedestal is greater than 500 μ m;
One chipset, adhesion is fixed on the reflection bottom face in the brilliant cup of this pedestal, this chipset comprises at least one chip, this chip has a light emitting surface and is positioned at upper surface, the institute's lap that defines the reflection bottom face deduction chipset of the brilliant cup of this pedestal amasss, with perimeter sides be the specular cross section of the brilliant cup of this pedestal to the area summation of reflecting surface, and the brilliant cup of this pedestal specular cross section compares greater than 10 with the area of the light emitting surface area of chipset, and this chipset has two pins that two electrode contacts electrically connect this pedestal respectively;
One transparent light guide layer is to form in the brilliant cup of this pedestal, and direct coating chip group; And
One phosphor body lens are to set firmly on this transparent light guide layer, these phosphor body lens comprise lens and the fluorescent particle of evenly sneaking in these lens integrally formed, the fluorescent particle concentration in these phosphor body lens is below 20% (percentage by weight).
2. as the white light emitting diode as described in the right 1, it is characterized in that, wherein, still comprise light diffusing agent in these phosphor body lens and this fluorescent particle is together evenly sneaked in these lens.
3. as the white light emitting diode as described in the right 1, it is characterized in that, wherein, still comprise light diffusing agent in this transparent light guide layer and together evenly sneak in this transparent light guide layer.
4. as the white light emitting diode of right 1 or 2 or 3 as described in each, it is characterized in that wherein, this two pins system is arranged on this substrate, the reflection bottom face of the brilliant cup of this pedestal passes this substrate bottom surface downwards certainly.
5. as right 1 or 2 or 3 white light emitting diode as described in each, it is characterized in that wherein, this two pins system is arranged at both sides, forms the surface and is pasting the electrode pin of assembly (SMD) pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810215284A CN101677119A (en) | 2008-09-18 | 2008-09-18 | White light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810215284A CN101677119A (en) | 2008-09-18 | 2008-09-18 | White light-emitting diode |
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| Publication Number | Publication Date |
|---|---|
| CN101677119A true CN101677119A (en) | 2010-03-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810215284A Pending CN101677119A (en) | 2008-09-18 | 2008-09-18 | White light-emitting diode |
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| Country | Link |
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| CN (1) | CN101677119A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102227012A (en) * | 2011-06-28 | 2011-10-26 | 复旦大学 | White light LED with uniform color temperature and high color rendering performance |
| CN102278641A (en) * | 2011-08-25 | 2011-12-14 | 上海亚明灯泡厂有限公司 | White light-emitting diode (LED) lamp and method for generating high color rendering white light |
| CN104218140A (en) * | 2013-05-30 | 2014-12-17 | Lg伊诺特有限公司 | Light emitting device package |
| CN105304802A (en) * | 2015-10-12 | 2016-02-03 | 深圳万城节能股份有限公司 | Method for manufacturing light emitting device |
-
2008
- 2008-09-18 CN CN200810215284A patent/CN101677119A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102227012A (en) * | 2011-06-28 | 2011-10-26 | 复旦大学 | White light LED with uniform color temperature and high color rendering performance |
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