CN101667578B - Novel integrated circuit resisting NMOS element total dose radiation - Google Patents
Novel integrated circuit resisting NMOS element total dose radiation Download PDFInfo
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- CN101667578B CN101667578B CN2009100934157A CN200910093415A CN101667578B CN 101667578 B CN101667578 B CN 101667578B CN 2009100934157 A CN2009100934157 A CN 2009100934157A CN 200910093415 A CN200910093415 A CN 200910093415A CN 101667578 B CN101667578 B CN 101667578B
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Priority Applications (1)
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CN2009100934157A CN101667578B (en) | 2009-09-30 | 2009-09-30 | Novel integrated circuit resisting NMOS element total dose radiation |
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CN2009100934157A CN101667578B (en) | 2009-09-30 | 2009-09-30 | Novel integrated circuit resisting NMOS element total dose radiation |
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CN101667578A CN101667578A (en) | 2010-03-10 |
CN101667578B true CN101667578B (en) | 2011-05-04 |
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CN2009100934157A Expired - Fee Related CN101667578B (en) | 2009-09-30 | 2009-09-30 | Novel integrated circuit resisting NMOS element total dose radiation |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006058210A1 (en) * | 2004-11-23 | 2006-06-01 | Alpha & Omega Semiconductor, Ltd. | Improved trenched mosfets with part of the device formed on a (110) crystal plane |
CN101419942A (en) * | 2007-10-24 | 2009-04-29 | 中芯国际集成电路制造(上海)有限公司 | Groove isolation construction manufacturing method capable of enhancing performance of semiconductor device |
US20090174008A1 (en) * | 2008-01-08 | 2009-07-09 | International Business Machines Corporation | METHOD AND STRUCTURE TO PROTECT FETs FROM PLASMA DAMAGE DURING FEOL PROCESSING |
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2009
- 2009-09-30 CN CN2009100934157A patent/CN101667578B/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006058210A1 (en) * | 2004-11-23 | 2006-06-01 | Alpha & Omega Semiconductor, Ltd. | Improved trenched mosfets with part of the device formed on a (110) crystal plane |
CN101419942A (en) * | 2007-10-24 | 2009-04-29 | 中芯国际集成电路制造(上海)有限公司 | Groove isolation construction manufacturing method capable of enhancing performance of semiconductor device |
US20090174008A1 (en) * | 2008-01-08 | 2009-07-09 | International Business Machines Corporation | METHOD AND STRUCTURE TO PROTECT FETs FROM PLASMA DAMAGE DURING FEOL PROCESSING |
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CN101667578A (en) | 2010-03-10 |
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Owner name: BEIJING UNIV. Effective date: 20130524 Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: BEIJING UNIV. Effective date: 20130524 |
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Free format text: CORRECT: ADDRESS; FROM: 100871 HAIDIAN, BEIJING TO: 100176 DAXING, BEIJING |
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Effective date of registration: 20130524 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Peking University Address before: 100871 Haidian District the Summer Palace Road,, No. 5, Peking University Patentee before: Peking University |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110504 Termination date: 20200930 |