CN101666824A - High-side current detection circuit - Google Patents
High-side current detection circuit Download PDFInfo
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- CN101666824A CN101666824A CN200910093604A CN200910093604A CN101666824A CN 101666824 A CN101666824 A CN 101666824A CN 200910093604 A CN200910093604 A CN 200910093604A CN 200910093604 A CN200910093604 A CN 200910093604A CN 101666824 A CN101666824 A CN 101666824A
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Abstract
The invention provides a high-side current detection circuit which is used for detecting current flowing through a transistor to be detected. The detection circuit works under a first state of detecting the current and a second state of not detecting the current, and comprises a voltage following circuit, a voltage-current converting circuit and a clamping circuit, wherein the voltage following circuit enables a first point voltage under the first state to change along with a second point voltage, and the second point voltage reflects the current flowing through the transistor to be detected;the voltage-current converting circuit is used for converting the first point voltage into current and outputting the current; and the clamping circuit is used for clamping the first point voltage toa voltage higher than earth potential under the second state. The high-side current detection circuit can be used for monitoring high-side NMOS current, and has high precision and high reaction speed.
Description
Technical field
The present invention relates to high-side current detection circuit.
Background technology
Current measurement techniques has very widely to be used, the size that all need to detect inflow in many systems, flows out electric current.For example, current protection/current monitoring equipment, 4-20mA electric current loop system, programmable current source, linearity/switched-mode power supply and the charger or the battery electric quantity meter that need to be grasped the inflow and outflow current ratio.Because a lot of the application is of portable form, so current detection circuit also must have the characteristic of small size, low-power consumption.
Fig. 1 is the application synoptic diagram of high-end NMOS current detection circuit in buck translation circuit (Buck circuit).The Buck circuit is divided into two duties, at state one, and NMOS pipe M0 conducting, inductive current rises with certain slope, and this time, current detection circuit produced signal V by the pressure drop at detection power pipe two ends
SENSEV
SENSEBe directly proportional with the electric current that flows through power tube.At state two, M0 turn-offs, and inductive current is by the lower end diode continuousing flow.Because M0 is a NMOS,, in the M0 conducting, must give magnitude of voltage that is higher than VI N of VG in order to allow M0 be operated in the linear zone of low on-resistance.When state two, because diode continuousing flow SW point voltage is a little less than ground, linear voltage adjuster LDO (low dropout) gives capacitor C 1 charging.At state for the moment, SW is a little less than VIN in the M0 conducting, because charges accumulated can not put on the capacitor C 1 quickly, so the BOOT point will produce a voltage that is higher than the VIN certain amplitude.Give driver Driver power supply with this voltage, thereby just can provide an abundant conducting M0 of voltage that is higher than VIN to VG.At state for the moment, current detection circuit produces a voltage V who is directly proportional with the electric current that flows through the M0 pipe by the voltage that detects the M0 two ends
SENSEV
SENSEProduce corresponding pwm signal by control circuit, thereby the ON time of regulating power tube M0 reaches the adjusting output voltage, provides the electric current of needs and the purpose of voltage to load.
Existing electric current detecting method all is to adopt trsanscondutance amplifier monitoring SW voltage basically, thereby obtains electric current.Fig. 2 is a kind of high-side current detection circuit of prior art, and it can be used as the current detection circuit among Fig. 1.As shown in Figure 2, M0, M1 and M2 constitute current mirroring circuit, the grid of M3 and M0, the grid of M1 and M2 links to each other, and one of the source electrode of M3 and drain electrode are connected to the SW point, and another of the source electrode of M3 and drain electrode is connected to the drain electrode of M2.When a high-end NMOS pipe was connected between VIN voltage and the SW end, because the change in voltage that SW is ordered causes M3 source/drain current to change, because M4 and M5 constitute current mirroring circuit, then unnecessary electric current was just through the output of Isense end.Electric current I sense can be along with bias current, and technological fluctuation produces very big deviation.And the M3 pipe need adopt all high voltage bearing device in both sides, also is a no small difficulty concerning some technology.
The United States Patent (USP) 5627494 that on May 6th, 1997 authorized has disclosed another kind of high-side current detecting amplifier, as shown in Figure 3.Yet this patented technology need increase switch when detecting high-end NMOS electric current, and along with the increase of switch, speed can obviously reduce.In addition, it can not eliminate process deviation, and accuracy is not high.
Summary of the invention
The objective of the invention is to solve the not high and unhappy problem of speed of precision in the high-side current detection, thereby quick, a high-precision high-side current detection circuit is provided.
For this reason, the present invention provides a kind of to the transistorized high-side current detection circuit that electric current detects that flows through to be measured in first aspect.This circuit working is at first state that carries out current detecting and do not detect under second state of electric current, and comprise: voltage follower circuit, make that first point voltage is followed the variation of second point voltage under first state, wherein second point voltage reflects the electric current that flows through of test transistor; Current/charge-voltage convertor is converted to electric current with first point voltage and is exported under first state; Clamped circuit is being higher than earthy voltage with first point voltage is clamped under second state.
According to second aspect, the invention provides a kind of buck translation circuit.The buck translation circuit comprises as the described high-side current detection circuit of first aspect.
Circuit of the present invention can be used as high-end NMOS current monitoring, and precision height and reaction velocity are fast.
Description of drawings
Below with reference to accompanying drawings specific embodiments of the present invention is described in detail, in the accompanying drawing:
Fig. 1 is high-end NMOS and the application synoptic diagram of current detection circuit in the Buck circuit;
Fig. 2 is a kind of high-side current detection circuit of prior art;
Fig. 3 is the high-side current detection circuit of another kind of prior art;
Fig. 4 is the circuit diagram that the high-side current of one embodiment of the present of invention detects;
Fig. 5 is the circuit diagram that the high-side current of an alternative embodiment of the invention detects;
Fig. 6 is a voltage/current waveform synoptic diagram;
Fig. 7 and Fig. 8 are respectively the synoptic diagram of two kinds of clamped circuit;
Fig. 9 and Figure 10 are respectively the synoptic diagram of two kinds of current/charge-voltage convertors.
Embodiment
Fig. 4 is the circuit diagram of the high-side current detection circuit of one embodiment of the present of invention, and it can be used as the current detection circuit among Fig. 1.
As shown in Figure 4, transistor M0 is high-end NMOS pipe.The drain electrode of M0 is connected voltage input end VIN, and source electrode is connected to an end of inductance L 0; The other end of inductance L 0 provides output voltage V out to load.Capacitor C 0 provides the ac filter effect for load.
In order to detect the electric current that transistor M0 leakage-source electrode flows through, high-side current detection circuit mainly comprises two parts, current/charge-voltage convertor and clamped circuit.
Current/charge-voltage convertor comprises transistor M3, M4 and M5, and current source I1 and I2.M3 and M4 and current source I1 and I2 constitute an operational amplifier together.The positive input terminal of operational amplifier (being the source electrode of M4) is connected to the source electrode of M2 at the B point, and negative input end (being the source electrode of M3) is connected to the source electrode of M1 at the A point.The output terminal of operational amplifier (being the drain electrode of M4) is connected to the grid of transistor M5, and the source feedback of M5 is connected to the negative input end of operational amplifier.The source electrode of M5 provides output current Isense.Certainly, current/charge-voltage convertor can also adopt the operational amplifier of other form.Fig. 9 and Figure 10 have illustrated current/charge-voltage convertor to adopt two connection diagrams of operational amplifier form.It also is feasible that current/charge-voltage convertor adopts the circuit of other form.
The grid of transistor M6 and M0 links to each other through the VG point, and its source electrode also is connected the SW point jointly.The drain electrode of transistor M6 is connected to the B point.Therefore, transistor M6 plays voltage and follows, and makes the B point voltage follow the variation of SW point voltage and change.
Clamped circuit comprises diode D0, transistor M7, M1 and M2.The grid of the positive pole of diode D0 and transistor M7 is connected to VI N end jointly, and the source electrode of the negative pole of diode and transistor M7 is connected to the VSG point jointly, drain electrode input BOOT voltage or the higher reference voltage of other level of transistor M7.Diode D0 and transistor M7 play a part high level and select circuit.Certainly, it also is feasible adopting the high level selection circuit of other form.The grid of transistor M1 is connected the VSG point, and drain electrode is connected to the VIN end.The grid of transistor M2 and drain electrode are connected to the VIN end jointly.
At state for the moment, the VG point voltage equals BOOT voltage, and conducting NMOS manages M0, gives inductance L 0 charging.VG is turn-on transistor M6 simultaneously, makes the B point voltage equal SW.In order to keep high efficient, the pressure reduction between general input voltage VIN and the SW point voltage is very little, and transistor M2 can conducting.Because at state for the moment, BOOT voltage is higher than VIN, the high level that diode D0 and transistor M7 constitute selects circuit to guarantee that VSG equals BOOT voltage, thus conducting M1.I1 and I2 provide bias current.Because the amplifier that M3 and M4 constitute has very big gain, thereby regulate the drain-source voltage VDS of M1 by regulating the electric current that flows through on the M5, guarantee A, the voltage that B is 2 equates.At this moment, contrast M0 and two pipes of M1.The drain-source voltage VDS of M0 equals VIN and deducts the SW point voltage, also just equals VIN and deducts the voltage that B is ordered.The VDS of M1 equals VIN and deducts the voltage that A is ordered.Amplifier has guaranteed that A point voltage and B point voltage equate, just mean that also the drain-source voltage VDS of M0 and M1 equates.
So following formula is arranged to be set up:
(Vin-VA)/R
onM1＝(Vin-VSW)/R
onM1。(1)
Pressure reduction (Vin-VSW)=I is leaked in the source of M0 pipe
M0* R
OnM0Therefore, (Vin-VSW)/R
OnM1=I
M0* R
OnM0/ R
OnM1.
Isense＝I
M0*R
onM0/R
onM1-I1.
Wherein, R
OnM1, and R
OnM0It is respectively the conduction impedance of M1 and M0.
Bias current is generally all very little.Simultaneously, the conducting resistance of choosing M0 is 1/K a times of M1, can get:
Isense＝I
M0/K.
Detected electric current is only relevant with ratio, and irrelevant with technological parameter.
In an example, I1 and I2 are two equal current sources.
When state two, VG turn-offs M0 and M6, and VSG equals VIN.Electric current I 1 and I2 are flow through in M1 and M2 conducting respectively, and M5 does not have electric current to flow through, and Isense equals 0.
In this process as can be seen, A, the voltage that B is 2 beating in state one and state two approximates a VGS.Referring to Fig. 6.Little beat voltage has guaranteed the fast detecting to M0 pipe electric current.Simultaneously, increase I1 and I2 and also can improve response speed.In an example, M1 and M0 are the pipes of same type, can guarantee to detect the accuracy of electric current, and be insensitive for the fluctuation of technology.
Fig. 5 is the circuit diagram that the high-side current of an alternative embodiment of the invention detects.The place that is different from Fig. 4 is that the connected mode of M3 and M4 is different in the operational amplifier of Fig. 5.Certainly, also can adopt the operational amplifier of other form.
Fig. 7 has illustrated an example of clamped circuit.As shown in Figure 7, high level selects the selected high level signal VSG that goes out of circuit to act on the grid of transistor M2.Thus, at state for the moment, though M2 work, its working current is very little, and is very little to the influence of B point voltage.During state two, because M6 turn-offs, the B point voltage has drop-down trend, and M2 is then clamped at higher current potential with the B point voltage.
Fig. 8 has illustrated another example of clamped circuit.High level selects the selected high level signal VSG that goes out of circuit to act on the grid of transistor M2 and M1.Thus, when state two, M2 is clamped at higher current potential with the B point voltage.
Circuit of the present invention can be used as high-end NMOS current monitoring, is applied in the different circuit.Transfer pad (trimming PAD) because the precision height can remove to repair, economize out a lot of areas, speed can be very fast simultaneously, can satisfy frequency all designs in the MHz magnitude.
Obviously, the present invention described here can have many variations.Can replace by resistance such as transistor M2 and M1.Perhaps, transistor can change type, and the NMOS pipe is used the PMOS pipe instead, and the PMOS pipe is replaced by the NMOS pipe.This variation can not be thought and departs from the spirit and scope of the present invention.Therefore, the change that all it will be apparent to those skilled in the art all is included within the covering scope of these claims.
Claims (13)
1. one kind to the transistorized high-side current detection circuit that electric current detects that flows through to be measured, and this circuit working is at first state that carries out current detecting and do not detect under second state of electric current, and comprises:
Voltage follower circuit makes first point (B) voltage follow, second point (SW) change in voltage under first state, and wherein second point voltage reflection test transistor flows through electric current;
Current/charge-voltage convertor is converted to electric current with first point voltage and is exported under first state;
Clamped circuit is being higher than earthy voltage with first point voltage is clamped under second state.
2. high-side current detection circuit as claimed in claim 1, wherein said clamped circuit comprise high level selection circuit (D0 and M7), and it comprises first input end, second input end and output terminal; High level selects the output terminal of circuit to be connected the grid of transistor seconds (M2); High level selects circuit to select higher level on the first input end and second input end, and described transistor seconds (M2) under the control of this higher level realize described under second state first point (B) voltage clamped.
High-side current detection circuit 3. as claimed in claim 1, the wherein clamped circuit transistor that to be grid link to each other with drain electrode (M2, Fig. 4).
4. high-side current detection circuit as claimed in claim 1, wherein said clamped circuit is to be realized by resistance.
5. high-side current detection circuit as claimed in claim 1, wherein said current/charge-voltage convertor comprises operational amplifier, its negative input end links to each other with first, output terminal links to each other with the grid of the 5th transistor (M5), the 5th transistor drain links to each other with the positive input terminal of operational amplifier with one of source electrode, and another of the 5th transistor drain and source electrode provides described output current.
6. high-side current detection circuit as claimed in claim 5, wherein operational amplifier comprises the 3rd transistor (M3) and the 4th transistor (M4), the 3rd transistorized source electrode is as the negative input end of operational amplifier, the 3rd transistor drain links to each other with grid and through the first current source ground connection, the 4th transistorized source electrode is as the positive input terminal of operational amplifier, the 4th transistorized grid links to each other with the 3rd transistorized grid, the 4th transistor drain is through the second current source ground connection, the 4th transistor drain is as the output terminal of operational amplifier, and first current source and second current source are two current offsets.
7. high-side current detection circuit as claimed in claim 6, wherein first current source and second current source adopt bigger electric current, to improve response speed.
8. high-side current detection circuit as claimed in claim 5 wherein is connected with the first transistor (M1) on the negative input end of operational amplifier.
9. high-side current detection circuit as claimed in claim 8, wherein, described clamped circuit comprises high level selection circuit (D0 and M7), it comprises first input end, second input end and output terminal; High level selects the output terminal of circuit to be connected the grid of the first transistor (M1); High level selects circuit to select higher level on the first input end and second input end, and is implemented under second state the clamped of (A) voltage thirdly at described the first transistor (M1) under the control of this higher level.
10. high-side current detection circuit as claimed in claim 8, wherein the first transistor adopts and test transistor pipe of the same type.
11. high-side current detection circuit as claimed in claim 10, wherein the size of the first transistor be the test transistor size K doubly, K is an integer.
12. as claim 2 or 9 described high-side current detection circuits, wherein said high level selects circuit to comprise diode, the 7th transistor, the positive pole of diode and the 7th transistorized grid are connected to the first input end that described high level is selected circuit, the negative pole of diode and the 7th transistorized source electrode are connected to the output terminal that high level is selected circuit, and the 7th transistor drain is described second input end.
13. a buck translation circuit circuit comprises the described high-side current detection circuit as one of claim 1-11.
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| CN2009100936044A CN101666824B (en) | 2009-10-14 | 2009-10-14 | High-side current detection circuit |
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| CN102539899A (en) * | 2010-09-21 | 2012-07-04 | 马克西姆综合产品公司 | Integrated mosfet current sensing for fuel-gauging |
| CN104914912A (en) * | 2014-03-12 | 2015-09-16 | 英飞凌科技奥地利有限公司 | Linear high speed tracking current sense system with positive and negative current |
| CN104965110A (en) * | 2014-10-30 | 2015-10-07 | 深圳市盛弘电气股份有限公司 | Power tube lossless current detection circuit and method |
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| CN105988032A (en) * | 2015-01-27 | 2016-10-05 | 帝奥微电子有限公司 | Current detection circuit |
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| WO2016179964A1 (en) * | 2015-05-08 | 2016-11-17 | 中兴通讯股份有限公司 | Detection circuit and detection method for high-side current |
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| US9664713B2 (en) | 2014-10-30 | 2017-05-30 | Infineon Technologies Austria Ag | High speed tracking dual direction current sense system |
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| WO2022237467A1 (en) * | 2021-05-13 | 2022-11-17 | 北京芯格诺微电子有限公司 | High-precision current sampling circuit having function of in-chip real-time calibration |
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| CN102539899B (en) * | 2010-09-21 | 2015-10-07 | 马克西姆综合产品公司 | The current sensor of the electric current of field effect transistor is crossed for senses flow |
| CN102539899A (en) * | 2010-09-21 | 2012-07-04 | 马克西姆综合产品公司 | Integrated mosfet current sensing for fuel-gauging |
| CN104914912A (en) * | 2014-03-12 | 2015-09-16 | 英飞凌科技奥地利有限公司 | Linear high speed tracking current sense system with positive and negative current |
| CN104914912B (en) * | 2014-03-12 | 2017-06-16 | 英飞凌科技奥地利有限公司 | Linear high speed follow current sensing system with positive current and negative current |
| US10666137B2 (en) | 2014-05-12 | 2020-05-26 | Texas Instruments Incorporated | Method and circuitry for sensing and controlling a current |
| CN106462176B (en) * | 2014-05-12 | 2018-11-27 | 德克萨斯仪器股份有限公司 | For sensing and controlling the method and circuit of electric current |
| CN106462176A (en) * | 2014-05-12 | 2017-02-22 | 德克萨斯仪器股份有限公司 | Method and circuitry for sensing and controlling a current |
| CN105334470B (en) * | 2014-05-30 | 2019-05-28 | 展讯通信（上海）有限公司 | A kind of power supply test circuit and power management chip based on LDO module |
| CN105334470A (en) * | 2014-05-30 | 2016-02-17 | 展讯通信（上海）有限公司 | Power testing circuit based on LDO (Low Dropout Regulator) module and power management chip |
| US9664713B2 (en) | 2014-10-30 | 2017-05-30 | Infineon Technologies Austria Ag | High speed tracking dual direction current sense system |
| CN104965110A (en) * | 2014-10-30 | 2015-10-07 | 深圳市盛弘电气股份有限公司 | Power tube lossless current detection circuit and method |
| US9798347B2 (en) | 2014-10-30 | 2017-10-24 | Infineon Technologies Austria Ag | High speed tracking dual direction current sense system |
| CN105988032A (en) * | 2015-01-27 | 2016-10-05 | 帝奥微电子有限公司 | Current detection circuit |
| CN106066419A (en) * | 2015-04-20 | 2016-11-02 | 精工半导体有限公司 | Current detection circuit |
| CN106066419B (en) * | 2015-04-20 | 2019-12-24 | 艾普凌科有限公司 | Current detection circuit |
| WO2016179964A1 (en) * | 2015-05-08 | 2016-11-17 | 中兴通讯股份有限公司 | Detection circuit and detection method for high-side current |
| CN110187163A (en) * | 2015-12-23 | 2019-08-30 | 英特尔Ip公司 | For detecting the device, method and system of current level |
| CN106656164A (en) * | 2016-11-16 | 2017-05-10 | 上海艾为电子技术股份有限公司 | High-level selection circuit and electronic system |
| CN108427027A (en) * | 2017-02-15 | 2018-08-21 | Ls 产电株式会社 | Equipment for detecting electric current |
| CN109314515A (en) * | 2018-09-03 | 2019-02-05 | 深圳市汇顶科技股份有限公司 | Data-interface, chip and chip system |
| CN112213553A (en) * | 2020-10-29 | 2021-01-12 | 国网河北省电力有限公司 | Device for measuring current |
| CN112213553B (en) * | 2020-10-29 | 2022-07-22 | 国网河北省电力有限公司 | Device for measuring current |
| WO2022237467A1 (en) * | 2021-05-13 | 2022-11-17 | 北京芯格诺微电子有限公司 | High-precision current sampling circuit having function of in-chip real-time calibration |
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Address after: Room 01, 10 / F, block a, Tiangong building, Keda, 30 Xueyuan Road, Haidian District, Beijing 100089 Patentee after: Meixinsheng Technology (Beijing) Co.,Ltd. Address before: 100190, room 911, building 3, Zijin digital garden, Haidian District, Beijing, Zhongguancun Patentee before: MAXIC TECHNOLOGY (BEIJING) Co.,Ltd. |