CN101665967B - Method for preparing cadmium sulfide nano-film by using dimetbylformamide - Google Patents

Method for preparing cadmium sulfide nano-film by using dimetbylformamide Download PDF

Info

Publication number
CN101665967B
CN101665967B CN200910114424XA CN200910114424A CN101665967B CN 101665967 B CN101665967 B CN 101665967B CN 200910114424X A CN200910114424X A CN 200910114424XA CN 200910114424 A CN200910114424 A CN 200910114424A CN 101665967 B CN101665967 B CN 101665967B
Authority
CN
China
Prior art keywords
film
cadmium sulfide
sulfide nano
beaker
dimetbylformamide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200910114424XA
Other languages
Chinese (zh)
Other versions
CN101665967A (en
Inventor
覃爱苗
陈海念
邓日学
黄建安
余昕波
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guilin University of Technology
Original Assignee
Guilin University of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guilin University of Technology filed Critical Guilin University of Technology
Priority to CN200910114424XA priority Critical patent/CN101665967B/en
Publication of CN101665967A publication Critical patent/CN101665967A/en
Application granted granted Critical
Publication of CN101665967B publication Critical patent/CN101665967B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

The invention discloses a method for preparing cadmium sulfide nano-film by using dimetbylformamide. The method comprises the following steps: treating conductive glass and graphite electrode through ultrasonic cleaning by using distilled water and alcohol, drying for standby, pouring 0.0001-0.00015mol of cadmium chloride and 0.0005-0.00065mol of sulfur source in a beaker, adding 10-15ml of pure dimetbylformamide to stir, then placing the beaker in a water bath kettle to heat to 50-90 DEG C, using graphite electrode as anode and conductive glass as cathode to electrodeposit under the constant pressure of 2-8V for 2-6 min and obtaining the cadmium sulfide nano-film, wherein the sulfur source is one of source and thioacetamide. The synthesis method of the invention has simple equipment, convenient operation, fast synthesis and controllable film thickness; in addition, the prepared cadmium sulfide nano-film has uniform color and smooth surface, the film is firm and hard to drop off, and the film has a certain electrical/optical characteristic.

Description

Utilize dimethyl formamide to prepare the method for cadmium sulfide nano-film
Technical field
The present invention relates to a kind of method of utilizing dimethyl formamide to prepare cadmium sulfide nano-film.
Background technology
Cadmium Sulfide is as a kind of important semiconductor nano material, has the second nonlinear optic characteristic, can be used for numerous aspects such as photodiode, fluorescent probe, transmitter, solar cell photoelectric catalysis and other photoelectric component design, to there be great application prospect in fields such as light, electrocatalysis and the biology in future, communications, have become the focus that people fall over each other to study.But the performance of cadmium sulfide nano material usually is subjected to the influence of factors such as pattern, structure, therefore, seek the new simple method of control synthesizing cadmium sulfide appearance of nano material on nanoscale, this has very important meaning to quickening the synthetic of inorganic semiconductor nano material with application.
Summary of the invention
The purpose of this invention is to provide a kind of is solvent with the dimethyl formamide, and preparation has the electrochemical method for synthesizing of good photoelectric cadmium sulfide nano-film fast.
Concrete steps are:
With distilled water, alcohol ultrasonic cleaning, dry up standby then conductive glass and Graphite Electrodes; Put into Cadmium chloride fine powder and the 0.0005-0.00065mol sulphur source of 0.0001-0.00015mol in the beaker together, add 10-15ml absolute dimethylformamide and stirring, then beaker is put into the water-bath internal heating to 50-90 ℃, with Graphite Electrodes as anode, conductive glass is as negative electrode, 2-8V voltage constant voltage galvanic deposit 2-6 minute, promptly obtain cadmium sulfide nano-film.
Described sulphur source is a kind of in sulphur and the thioacetamide.
Synthetic method equipment of the present invention is simple, easy to operate, and is fast synthetic, controllable film thickness, and the cadmium sulfide nano film color homogeneous of preparation, and surfacing, and certain photoelectric characteristic is arranged.The firm difficult drop-off of the cadmium sulfide nano-film that obtains, thickness are 100-200nm, golden transparent, are made up of the spherical cadmium sulfide nano particulate of densification.
Embodiment
Embodiment 1:
0.0001mol (0.0228g) Cadmium chloride fine powder and 0.00065mol (0.0208g) sulphur are put in the beaker of 15ml together, the absolute dimethylformamide that adds 10ml, stirred 2 minutes with glass stick, the solution that stirs is put in the water-bath, anode is a graphite, negative electrode is a conductive glass, the water bath temperature is set at 50 ℃, after reaching the temperature that sets Deng the water-bath temperature, electrochemical deposition is 5 minutes under the constant voltage of 5V, just can obtain the good cadmium sulfide nano-film of photovoltaic effect, thickness is 135nm.
Embodiment 2:
0.0001mol (0.0228g) Cadmium chloride fine powder and 0.00065mol (0.0490g) thioacetamide are put in the beaker of 15ml together, the absolute dimethylformamide that adds 10ml, stirred 2 minutes with glass stick, the solution that stirs is put in the water-bath, anode is a graphite, negative electrode is a conductive glass, the water-bath temperature is set at 80 ℃, after reaching the temperature that sets Deng the water-bath temperature, electrochemical deposition is 3 minutes under the constant voltage of 5V, just can obtain the good cadmium sulfide nano-film of photovoltaic effect, thickness is 168nm.

Claims (1)

1. method of utilizing dimethyl formamide to prepare cadmium sulfide nano-film is characterized in that concrete steps are:
With distilled water, alcohol ultrasonic cleaning, dry up standby then conductive glass and Graphite Electrodes; Put into Cadmium chloride fine powder and the 0.0005-0.00065mol sulphur source of 0.0001-0.00015mol in the beaker together, add 10-15ml absolute dimethylformamide and stirring, then beaker is put into the water-bath internal heating to 50-90 ℃, with Graphite Electrodes as anode, conductive glass is as negative electrode, 2-8V voltage constant voltage galvanic deposit 2-6 minute, promptly obtain cadmium sulfide nano-film;
Described sulphur source is a kind of in sulphur and the thioacetamide.
CN200910114424XA 2009-09-22 2009-09-22 Method for preparing cadmium sulfide nano-film by using dimetbylformamide Expired - Fee Related CN101665967B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200910114424XA CN101665967B (en) 2009-09-22 2009-09-22 Method for preparing cadmium sulfide nano-film by using dimetbylformamide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN200910114424XA CN101665967B (en) 2009-09-22 2009-09-22 Method for preparing cadmium sulfide nano-film by using dimetbylformamide

Publications (2)

Publication Number Publication Date
CN101665967A CN101665967A (en) 2010-03-10
CN101665967B true CN101665967B (en) 2011-02-09

Family

ID=41802735

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200910114424XA Expired - Fee Related CN101665967B (en) 2009-09-22 2009-09-22 Method for preparing cadmium sulfide nano-film by using dimetbylformamide

Country Status (1)

Country Link
CN (1) CN101665967B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102206050B (en) * 2010-03-31 2013-05-08 比亚迪股份有限公司 Method for forming cadmium sulfide film through chemical bath deposition
CN101829584A (en) * 2010-05-29 2010-09-15 桂林理工大学 Method for preparing cadmium sulfide nano-film photocatalyst by utilizing mixed organic solvent
CN102644089B (en) * 2012-04-25 2014-12-10 宁波大学 Preparation method for cadmium sulfide quantum dots
CN104789984B (en) * 2015-03-18 2017-07-04 华南师范大学 A kind of method that ascorbic acid promotes glucose photoelectrocatalysioxidization oxidization hydrogen manufacturing

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
S.J.Lade,C.D.Lokhande.Electrodeposition of CdS from non-aqueous bath.《Materials Chemistry and Physics》.1997,第49卷(第2期),160-163. *

Also Published As

Publication number Publication date
CN101665967A (en) 2010-03-10

Similar Documents

Publication Publication Date Title
CN106784329B (en) A kind of SnO2 quantum dot electron transfer layer perovskite solar battery and preparation method thereof
CN104157788B (en) It is a kind of to be based on SnO2Perovskite thin film photovoltaic cell and preparation method thereof
Yu et al. ZnS/ZnO heteronanostructure as photoanode to enhance the conversion efficiency of dye-sensitized solar cells
CN105369232B (en) Synthesis Ca-Ti ore type CH is controlled based on lead simple substance membrane original position large area3NH3PbBr3The chemical method of thin-film material
CN105762168B (en) A kind of perovskite solar cell and ultracapacitor integration member and preparation method thereof
CN101800130B (en) Method for preparing dye-sensitized solar cell compound light anode with zinc oxide nanometer structure
Izaki et al. Electrodeposited ZnO Nanowire/Cu2O Photovoltaic Device with Highly Resistive ZnO Intermediate Layer
CN101665967B (en) Method for preparing cadmium sulfide nano-film by using dimetbylformamide
CN103078013B (en) Method for preparing bismuth vanadate/bismuth ferrite heterojunction film solar cells
CN107134531B (en) A kind of increase perovskite CH3NH3PbI3Crystal grain is to improve the method for film crystalline quality
CN104022226B (en) Perovskite-based thin film solar cell and preparation method thereof
CN104282847A (en) Interruptible perovskite type organic halide thin-film solar cell photo-anode preparing method
CN105390613A (en) Method for preparing perovskite/oxide thin film electrode
CN103107242B (en) Prepare the method for pucherite solar cell on the glass substrate
CN103825011B (en) The tin of lithium ion battery and the preparation method of conducting polymer composite negative pole material film
CN104311798A (en) Preparation method of conductive polymer film having inverse opal structure
CN101777430B (en) Preparation method for titanium dioxide membrane used as dye-sensitized solar cell photo-anode
CN103887071B (en) A kind of flexible dye-sensitized solar battery nanometer paper substrate complex light anode and preparation method thereof
Guo et al. Nondestructive transfer strategy for high-efficiency flexible perovskite solar cells
CN102881458A (en) Preparation method for graphene and titanium dioxide composite sizing material
CN109473550A (en) A kind of large area perovskite solar battery and preparation method thereof
CN106920971A (en) A kind of cluster polyaniline nano fiber composite carbon electrode and preparation method and purposes
CN107705993B (en) Dye-sensitized solar cells cupric oxide nano-rod array is to electrode and preparation method thereof
CN102543450B (en) Method for producing solid-state dye sensitization solar battery under magnetic field
CN106847951B (en) A kind of carbon quantum dot load cuprous sulfocyanide optoelectronic film and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110209

Termination date: 20110922