CN101660207B - Method for synthesizing gallium phosphide polycrystal - Google Patents
Method for synthesizing gallium phosphide polycrystal Download PDFInfo
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- CN101660207B CN101660207B CN2008101189316A CN200810118931A CN101660207B CN 101660207 B CN101660207 B CN 101660207B CN 2008101189316 A CN2008101189316 A CN 2008101189316A CN 200810118931 A CN200810118931 A CN 200810118931A CN 101660207 B CN101660207 B CN 101660207B
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- gallium phosphide
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- ruhmkorff coil
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- polycrystal
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CN2008101189316A CN101660207B (en) | 2008-08-26 | 2008-08-26 | Method for synthesizing gallium phosphide polycrystal |
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CN2008101189316A CN101660207B (en) | 2008-08-26 | 2008-08-26 | Method for synthesizing gallium phosphide polycrystal |
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CN101660207A CN101660207A (en) | 2010-03-03 |
CN101660207B true CN101660207B (en) | 2012-03-07 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103866390B (en) * | 2012-12-12 | 2016-06-01 | 有研光电新材料有限责任公司 | A kind of gallium phosphide polycrystal body mixes zinc method |
CN103173715B (en) * | 2012-12-19 | 2014-10-29 | 常州星海电子有限公司 | Preparation method of GaP film material |
CN107782065B (en) * | 2016-08-25 | 2020-05-29 | 澄江县磷化工华业有限责任公司 | Yellow phosphorus electric furnace electrode baking method capable of avoiding damaging furnace bottom |
US20230049408A1 (en) * | 2020-12-23 | 2023-02-16 | The 13Th Research Institute Of China Electronics Technology Group Corporation | Semiconductor Phosphide Injection Synthesis System and Control Method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1681975A (en) * | 2002-07-08 | 2005-10-12 | Btg国际有限公司 | Nanostructures and methods for manufacturing the same |
CN1796619A (en) * | 2004-12-23 | 2006-07-05 | 北京有色金属研究总院 | Method for lowering dislocation at tail of monocrystal of gallium phosphide |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1681975A (en) * | 2002-07-08 | 2005-10-12 | Btg国际有限公司 | Nanostructures and methods for manufacturing the same |
CN1796619A (en) * | 2004-12-23 | 2006-07-05 | 北京有色金属研究总院 | Method for lowering dislocation at tail of monocrystal of gallium phosphide |
Non-Patent Citations (3)
Title |
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JP特开2004-10467A 2004.01.15 |
JP特开2005-200229A 2005.07.28 |
林泉,徐小林,金攀.Φ 60 mm 掺碲 GaP 单晶的研制.《支撑技术》.2006,第31卷(第11期), * |
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CN101660207A (en) | 2010-03-03 |
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Free format text: FORMER OWNER: YOUYAN OPTOELECTRONIC NEW MATERIAL CO., LTD. Effective date: 20130805 Owner name: YOUYAN OPTOELECTRONIC NEW MATERIAL CO., LTD. Free format text: FORMER OWNER: BEIJING CENTRAL INST.OF THE NONFERROUS METAL Effective date: 20130805 |
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Free format text: CORRECT: ADDRESS; FROM: 100088 HAIDIAN, BEIJING TO: 065001 LANGFANG, HEBEI PROVINCE |
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Effective date of registration: 20130805 Address after: 065001 hi tech Development Zone, Hebei, Langfang Patentee after: Youyan Photoelectric New Material Co.,Ltd. Address before: 100088, 2, Xinjie street, Beijing Patentee before: General Research Institute for Nonferrous Metals Patentee before: Youyan Photoelectric New Material Co.,Ltd. |
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Effective date of registration: 20220413 Address after: 065201 South Youyan Technology Group Co., Ltd. No.2, Xingdu village, Yanjiao, Sanhe City, Langfang City, Hebei Province Patentee after: GRINM GUOJING ADVANCED MATERIALS Co.,Ltd. Address before: 065001 Langfang hi tech Development Zone, Hebei Province Patentee before: GRINM ELECTRO-OPTIC MATERIALS CO.,LTD. |
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