CN101659488A - Compound type electromagnetic water treatment system - Google Patents
Compound type electromagnetic water treatment system Download PDFInfo
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- CN101659488A CN101659488A CN200910190835A CN200910190835A CN101659488A CN 101659488 A CN101659488 A CN 101659488A CN 200910190835 A CN200910190835 A CN 200910190835A CN 200910190835 A CN200910190835 A CN 200910190835A CN 101659488 A CN101659488 A CN 101659488A
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Abstract
The invention discloses a compound type electromagnetic water treatment system, which comprises a water storage container, wherein a water outlet of the water storage container is connected with a water inlet pipeline thereof. The water treatment system is characterized by that a high-pressure pulse processor and a high-frequency pulse processor are connected onto the water outlet of the water storage container and the water inlet pipeline thereof, and that a water outlet of the high-frequency pulse processor is connected with a water inlet of the water storage container. The inventive compound type electromagnetic water treatment system has the advantages of simple structure, low cost and good effect; moreover, the water treatment system is capable of performing treatments on biological silts and water scale in circulating water simultaneously without the production of secondary pollution.
Description
Technical field
The invention belongs to a kind of water treatment system, particularly relate to compound type electromagnetic water treatment system.
Background technology
At present, it mainly is chemical process that the industrial cycle water-chilling plant is handled the method that biological clay and incrustation scale adopted, and adds Scale inhibitors and biocide in water, and this causes processing cost to increase, and produces secondary pollution.
Adopt the electromagnetic water treatment device that biological clay in the recirculated cooling water or incrustation scale are handled at present, this has reduced biological clay or the incrustation scale in the recirculated cooling water under certain condition well, but this method can not be removed biological clay and incrustation scale in the recirculated cooling water simultaneously.
The shortcoming of prior art is: produce secondary pollution, can not handle biological clay in the recirculated cooling water and incrustation scale simultaneously.
Summary of the invention
Problem to be solved by this invention is to provide a kind of compound type electromagnetic water treatment system of non-secondary pollution, can handle biological clay in the recirculated cooling water and incrustation scale simultaneously.
For achieving the above object, the invention provides a kind of compound type electromagnetic water treatment system, comprise water storage container, this water storage container water outlet is connected with its water inlet pipeline, its key is: be connected with high-voltage pulse treater and high-frequency impulse treater on described water storage container water outlet and its water inlet pipeline, the water inlet of described high-voltage pulse treater is connected with the water outlet of described water storage container, the water outlet of described high-voltage pulse treater is connected with the water inlet of described high-frequency impulse treater, and the water outlet of this high-frequency impulse treater is connected with described water storage container water inlet.
Also be connected with water pump on described water storage container water outlet and its water inlet pipeline.
Water pump extracts water from water storage container, and a water that extracts is sent in the high-voltage pulse treater, the high-voltage pulse treater carries out the high-voltage pulse processing to sending into water, water after the autoclaving enters the high-frequency impulse treater under the water pump dynamic action, the high-frequency impulse treater carries out the high-frequency impulse processing to the water that enters in it, water after high-frequency impulse is handled flows back in the water storage container under the water pump dynamic action, and so the water in the water storage container circulates in system and device.
This compound type electromagnetic water treatment system device can be handled biological clay in the recirculated cooling water and incrustation scale simultaneously.
Described high-voltage pulse treater is provided with high-voltage pulse treating chamber and high-voltage pulse signal generation circuit, described high-voltage pulse treating chamber comprises columniform high-voltage pulse process chambers, positive plate and negative plate, described positive plate and negative plate are installed in parallel in the high-voltage pulse process chambers, and with high-voltage pulse process chambers axially parallel;
Described high-voltage pulse signal generation circuit is provided with transformer, these transformer input coil two termination civil powers, power winding is connected with rectifier bridge two input terminuss, this rectifier bridge output plus terminal is connected with the head end of first resistance, the tail end of this first resistance is connected with the anode of first chemical capacitor, the negativing ending grounding of this first chemical capacitor, the anode of described first chemical capacitor also is connected with the source electrode of an IGBT, the grid of the one IGBT is connected with pilot circuit, drain electrode is connected with the grid of hydrogen gas filled thyratron, the anode of described hydrogen gas filled thyratron is connected with described positive plate, plus earth, this negative electrode also is connected with described negative plate, the positive termination 6.3V low-voltage AC of the cathode heater of described hydrogen gas filled thyratron, cathode heater negativing ending grounding;
Described rectifier bridge output plus terminal also is connected with the anode of second chemical capacitor, and this has the negativing ending grounding of second chemical capacitor.
High-voltage pulse signal generation circuit is city's electric boost, rectification, be added to the collector electrode of an IGBT after the filtering, the first electric capacity store electrical energy, pilot circuit is controlled opening and turn-offing of an IGBT, when the one IGBT turn-offs, first electric capacity is in charging state, during the one IGBT conducting, first capacitor discharge, thereby generation driving pulse, the work of driving hydrogen gas filled thyratron, the pulse high-voltage of generation amplitude more than 10kV, pulse high-voltage are added on the positive plate and negative plate of parallel installation in the high-voltage pulse process chambers, the water that enters in the high-voltage pulse treater is carried out the high-voltage sterilization, thereby suppress well, reduced the generation of biological clay.
Described pilot circuit is provided with the insulation blocking chip and drives chip; the input anode of this insulation blocking chip+connect positive voltage; input negative terminal-outside obtains pulse control signal; the output terminal of this insulation blocking chip is connected with the input terminus of described driving chip, is connected with the grid of a described IGBT behind output terminal string the 3rd resistance of this driving chip.
The insulation blocking chip receives control wave, and the control wave after output is handled is to the input terminus that drives chip, and this drives the output terminal output pulse signal of chip, controls opening and turn-offing of an IGBT, realizes the work of control hydrogen gas filled thyratron.
Described high-frequency impulse treater is provided with high-frequency impulse treating chamber and high-frequency pulse signal generation circuit, described high-frequency impulse treating chamber comprises columniform high-frequency impulse process chambers and metal bar, this metal bar is installed in the middle part of high-frequency impulse process chambers, and axial consistent with the high-frequency impulse process chambers.
Described high-frequency pulse signal generation circuit is provided with temperature sensing circuit, magnetic field detection circuit, MCU, communication interface circuit, liquid crystal display circuit and signal generating circuit, the output terminal of described temperature sensing circuit is connected with described MCU first input end, the output terminal of magnetic field detection circuit is connected with described MCU second input terminus, first output terminal of this MCU is connected with described signal generating circuit input terminus, this MCU second output terminal is connected with described liquid crystal display circuit input terminus, described MCU also with described two-way connection of communication interface circuit.
The temperature of temperature sensing circuit, magnetic field detection electric circuit inspection recirculated water and the intravital magneticstrength of high-frequency impulse treating chamber, then temperature signal and magneticstrength are transferred to MCU, MCU control liquid crystal display circuit shows the temperature and the magneticstrength information of water in the high-frequency impulse process chambers, import the high-frequency impulse control signal by the communication interface circuit to MCU, make MCU first output terminal output control signal, control signal generation circuit working produces high-frequency impulse;
High-frequency impulse acts on recirculated water, makes the water molecules point elevation loss in the recirculated water, reduces the potential difference with high-frequency impulse process chambers inwall, and various salt ions are tending towards because of electrostatic attraction weakens disperseing in the water molecules, has reduced and the adhering to of wall.Simultaneously, the recirculated water cutting magnetic induction line that flows, water molecules obtain magnetic strength should be able to, produce magnetization and polarization, single water molecules quantity increases, water molecules is more active, has improved the solubleness of recirculated water to incrustation scale greatly, thereby can effectively dissolve the removal incrustation scale.
Described signal generating circuit is provided with frequency selective switch pilot circuit and high frequency generation circuit, wherein the frequency selective switch pilot circuit comprises crystal oscillator and frequency division chip, described crystal oscillator high pressure termination positive voltage, low pressure end ground connection, the output terminal of this crystal oscillator is connected with first clock signal terminal of described frequency division chip, described frequency division chip also is provided with first and triggers input terminus and second clock signal end, described first triggering input terminus and second clock signal end receive the control signal of described MCU output respectively, described frequency division chip also is provided with first trigger end and the first reverse input terminus that triggers is connected, second trigger end and second oppositely triggers input terminus and is connected, and the actuate signal output terminal of described frequency division chip is connected with the driving input terminus of described high frequency generation circuit;
Described high frequency generation circuit is provided with first triode and second triode, wherein first triode is a NPN type triode, second triode is the positive-negative-positive triode, the base stage of described first triode and second triode all is connected with the actuate signal output terminal of described frequency division chip, the collector electrode of described first triode connects positive voltage, emtting electrode is connected with the emtting electrode of described second triode, the grounded collector of this second triode, the emtting electrode of described first triode also is connected with the grid of MOSFET HF switch, be connected grounded drain with positive voltage behind source electrode string the 3rd inductance of this MOSFET HF switch;
The source electrode of described MOSFET HF switch also is connected with an end of the 4th inductance, is connected with an end of the 3rd electric capacity behind the other end string the 4th resistance of the 4th inductance, connects positive voltage behind the other end string the 4th electric capacity of the 3rd electric capacity.
Crystal oscillator produces the pulse duration frequency signal of 2MHz, and this frequency signal is transferred to the frequency division chip, the frequency division chip receives the control signal of MCU, according under different condition of water quality, MCU sends different control signals, control frequency division chip drives output terminal output 500KHz, 1MHz, the frequency of 2MHz, the frequency signal of frequency division chip drives output terminal output is added to the base stage of first triode and second triode, first triode and second triode are formed push-pull driving circuit, the grid triggering and conducting of control MOSFET HF switch with end, the MOSFET HF switch is realized the frequency switching function, control is by the 4th inductance, the 4th resistance, the RLC oscillatory circuit work that the 3rd electric capacity is formed, producing frequency is the high-frequency impulse of 500kHz-2MHz, handles incrustation scale.
One end of described the 3rd electric capacity is described metal bar, and the other end of the 3rd electric capacity is the inwall of described high-frequency impulse process chambers.
The metal bar outside surface connects positive pole, and the high-frequency impulse process chambers connects negative pole, and both form rod--the plate electromagnetic field, can magnetize recirculated water more effectively.
Unusual effect of the present invention is: simple in structure, respond well, and can handle biological clay in the recirculated cooling water and incrustation scale simultaneously, and can not produce secondary pollution.
Description of drawings
Fig. 1 is an annexation block diagram of the present invention;
Fig. 2 is the schematic diagram of high-voltage pulse treating chamber;
Fig. 3 is a high-voltage pulse signal generation schematic circuit;
Fig. 4 is pilot circuit figure;
Fig. 5 is a high-frequency impulse treating chamber schematic diagram;
Fig. 6 is a high-frequency pulse signal generation schematic circuit;
Fig. 7 is the frequency selective switch pilot circuit;
Fig. 8 is the signal generating circuit figure of high-frequency pulse signal generation circuit.
Embodiment
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
As shown in Figure 1, a kind of compound type electromagnetic water treatment system, comprise water storage container 1, this water storage container 1 water outlet is connected with its water inlet pipeline, be connected with high-voltage pulse treater 3 and high-frequency impulse treater 4 on described water storage container 1 water outlet and its water inlet pipeline, the water inlet of described high-voltage pulse treater 3 is connected with the water outlet of described water storage container 1, the water outlet of described high-voltage pulse treater 3 is connected with the water inlet of described high-frequency impulse treater 4, and the water outlet of this high-frequency impulse treater 4 is connected with described water storage container 1 water inlet.
Also be connected with water pump 2 on described water storage container 1 water outlet and its water inlet pipeline.
As shown in Figure 2, described high-voltage pulse treater 3 is provided with high-voltage pulse treating chamber and high-voltage pulse signal generation circuit, described high-voltage pulse treating chamber comprises columniform high-voltage pulse process chambers 5, positive plate 6 and negative plate 7, described positive plate 6 and negative plate 7 are installed in parallel in the high-voltage pulse process chambers 5, and with high-voltage pulse process chambers 5 axially parallels;
As shown in Figure 3, described high-voltage pulse signal generation circuit is provided with transformer T, this transformer T input coil L1 two termination civil powers, power winding L2 is connected with rectifier bridge D two input terminuss, this rectifier bridge D output plus terminal is connected with the head end of first resistance R 1, the tail end of this first resistance R 1 is connected with the anode of the first chemical capacitor C1, the negativing ending grounding of this first chemical capacitor C1, the anode of the described first chemical capacitor C1 also is connected with the source electrode of an IGBT Q1, the grid of the one IGBT Q1 is connected with pilot circuit 3a, drain electrode is connected with the grid of hydrogen gas filled thyratron Q2, the anode of described hydrogen gas filled thyratron Q2 is connected with described positive plate 6, plus earth, and this negative electrode also is connected with described negative plate 7, the positive termination 6.3V low-voltage AC of the cathode heater of described hydrogen gas filled thyratron Q2, the cathode heater negativing ending grounding;
Described rectifier bridge D output plus terminal also is connected with the anode of the second chemical capacitor C2, and this has the negativing ending grounding of the second chemical capacitor C2.
As shown in Figure 4; described pilot circuit 3a is provided with insulation blocking chip U1 and drives chip U2; the input anode of this insulation blocking chip U1+connect positive voltage; input negative terminal-obtain pulse control signal; the output terminal OUT of this insulation blocking chip U1 is connected with the input terminus IN of described driving chip U2, and the output terminal OUT of this driving chip U2 goes here and there the 3rd resistance R 3 back and is connected with the grid of a described IGBT Q1.
The chip model of insulation blocking chip U1 is TLP250, and the chip model that drives chip U2 is MC33153, and insulation blocking chip U1 guarantees PWM modulation signal and the reliable isolation that drives chip U2, drives chip U2 and drives an IGBT Q1.
As shown in Figure 5, described high-frequency impulse treater 4 is provided with high-frequency impulse treating chamber and high-frequency pulse signal generation circuit, described high-frequency impulse treating chamber comprises columniform high-frequency impulse process chambers 8 and metal bar 8a, this metal bar 8a is installed in the middle part of high-frequency impulse process chambers 8, and axial consistent with high-frequency impulse process chambers 8.
As shown in Figure 6, described high-frequency pulse signal generation circuit is provided with temperature sensing circuit 9, magnetic field detection circuit 10, MCU11, communication interface circuit 12, liquid crystal display circuit 13 and signal generating circuit 14, the output terminal of described temperature sensing circuit 9 is connected with described MCU11 first input end, the output terminal of magnetic field detection circuit 10 is connected with described MCU11 second input terminus, first output terminal of this MCU11 is connected with described signal generating circuit 14 input terminuss, this MCU11 second output terminal is connected with described liquid crystal display circuit 13 input terminuss, described MCU11 also with described 12 two-way connections of communication interface circuit.
As Fig. 7, shown in 8, described signal generating circuit 14 is provided with frequency selective switch pilot circuit and high frequency generation circuit, wherein the frequency selective switch pilot circuit comprises crystal oscillator U3 and frequency division chip U4, wherein the model of frequency division chip U4 is 74HC74, described crystal oscillator U3 high-pressure side VDD connects positive voltage, low pressure end GND ground connection, the output terminal of this crystal oscillator U3 is connected with the first clock signal terminal 1CLK of described frequency division chip U4, described frequency division chip U4 also is provided with first and triggers input terminus 1Q and second clock signal end 2CLK, described first triggering input terminus 1Q and second clock signal end 2CLK receive the control signal of described MCU11 output respectively, described frequency division chip U4 also is provided with the first trigger end 1D and the first reverse input terminus 1Q that triggers is connected, the second trigger end 2D and second oppositely triggers input terminus 2Q and is connected, and the actuate signal output terminal 2Q of described frequency division chip U4 is connected with the driving input terminus of described high frequency generation circuit;
Described high frequency generation circuit is provided with the first triode T1 and the second triode T2, wherein the first triode T1 is a NPN type triode, the second triode T2 is the positive-negative-positive triode, the base stage of the described first triode T1 and the second triode T2 all is connected with the actuate signal output terminal 2Q of described frequency division chip U4, the collector electrode of the described first triode T1 connects positive voltage, emtting electrode is connected with the emtting electrode of the described second triode T2, the grounded collector of this second triode T2, the emtting electrode of the described first triode T1 also is connected with the grid of MOSFET HF switch Q3, source electrode string the 3rd inductance L 3 backs of this MOSFET HF switch Q3 are connected grounded drain with positive voltage;
The source electrode of described MOSFET HF switch Q3 also is connected with an end of the 4th inductance L 4, and the other end string the 4th resistance R 4 backs of the 4th inductance L 4 are connected with an end of the 3rd capacitor C 3, connect positive voltage after the other end string the 4th capacitor C 4 of the 3rd capacitor C 3.
One end of described the 3rd capacitor C 3 is described metal bar 8a, and the other end of the 3rd capacitor C 3 is the inwall of described high-frequency impulse process chambers 8.
Principle of work of the present invention is: water pump 2 extracts water from water storage container 1, and a water that extracts is sent in the high-voltage pulse treating chamber of high-voltage pulse treater 3, high-voltage pulse signal generation circuit produces pulse high-voltage, pulse high-voltage acts on the positive plate 6 and negative plate 7 that is provided with in the high-voltage pulse process chambers 5, the recirculated water that flows in the high-voltage pulse process chambers 5 is carried out the high-voltage sterilization, recirculated water after the high-voltage germicidal treatment enters in the high-frequency impulse treating chamber of high-frequency impulse treater 4 under water pump 2 dynamic actions, high-frequency pulse signal generation circuit produces the pulse high frequency, the recirculated water that flows in the high-frequency impulse treating chamber is carried out the high-frequency impulse processing, make the water molecules of recirculated water produce magnetization and polarization, the dissolving incrustation scale; Recirculated water after high-frequency impulse is handled flows back in the water storage container 1 under water pump 2 dynamic actions, and so the water in the water storage container 1 circulates in system and device, repeatedly by sterilization and magnetization.
Claims (7)
1, a kind of compound type electromagnetic water treatment system, comprise water storage container (1), this water storage container (1) water outlet is connected with its water inlet pipeline, it is characterized in that: be connected with high-voltage pulse treater (3) and high-frequency impulse treater (4) on described water storage container (1) water outlet and its water inlet pipeline, the water inlet of described high-voltage pulse treater (3) is connected with the water outlet of described water storage container (1), the water outlet of described high-voltage pulse treater (3) is connected with the water inlet of described high-frequency impulse treater (4), and the water outlet of this high-frequency impulse treater (4) is connected with described water storage container (1) water inlet.
2, according to the described compound type electromagnetic water treatment system of claim 1, it is characterized in that: also be connected with water pump (2) on described water storage container (1) water outlet and its water inlet pipeline.
3, according to the described compound type electromagnetic water treatment system of claim 1, it is characterized in that: described high-voltage pulse treater (3) is provided with high-voltage pulse treating chamber and high-voltage pulse signal generation circuit, described high-voltage pulse treating chamber comprises columniform high-voltage pulse process chambers (5), positive plate (6) and negative plate (7), described positive plate (6) and negative plate (7) are installed in parallel in the high-voltage pulse process chambers (5), and with high-voltage pulse process chambers (5) axially parallel;
Described high-voltage pulse signal generation circuit is provided with transformer (T), this transformer (T) input coil (L1) two termination civil powers, power winding (L2) is connected with rectifier bridge (D) two input terminuss, this rectifier bridge (D) output plus terminal is connected with the head end of first resistance (R1), the tail end of this first resistance (R1) is connected with the anode of first chemical capacitor (C1), the negativing ending grounding of this first chemical capacitor (C1), the anode of described first chemical capacitor (C1) also is connected with the source electrode of an IGBT (Q1), the grid of the one IGBT (Q1) is connected with pilot circuit (3a), drain electrode is connected with the grid of hydrogen gas filled thyratron (Q2), the anode of described hydrogen gas filled thyratron (Q2) is connected with described positive plate (6), plus earth, this negative electrode also is connected with described negative plate (7), the positive termination low-voltage AC of the cathode heater of described hydrogen gas filled thyratron (Q2), the cathode heater negativing ending grounding;
Described rectifier bridge (D) output plus terminal also is connected with the anode of second chemical capacitor (C2), the negativing ending grounding of this second chemical capacitor (C2).
4, according to the described compound type electromagnetic water treatment system of claim 3; it is characterized in that: described pilot circuit (3a) is provided with insulation blocking chip (U1) and drives chip (U2); the input anode (+) of this insulation blocking chip (U1) connects positive voltage; input negative terminal (-) obtains pulse control signal from the outside; the output terminal (OUT) of this insulation blocking chip (U1) is connected with the input terminus (IN) of described driving chip (U2), and this output terminal (OUT) string the 3rd resistance (R3) back that drives chip (U2) is connected with the grid of a described IGBT (Q1).
5, according to the described compound type electromagnetic water treatment system of claim 1, it is characterized in that: described high-frequency impulse treater (4) is provided with high-frequency impulse treating chamber and high-frequency pulse signal generation circuit, described high-frequency impulse treating chamber comprises columniform high-frequency impulse process chambers (8) and metal bar (8a), this metal bar (8a) is installed in the middle part of high-frequency impulse process chambers (8), and axial consistent with high-frequency impulse process chambers (8);
Described high-frequency pulse signal generation circuit is provided with temperature sensing circuit (9), magnetic field detection circuit (10), MCU (11), communication interface circuit (12), liquid crystal display circuit (13) and signal generating circuit (14), the output terminal of described temperature sensing circuit (9) is connected with described MCU (11) first input end, the output terminal of magnetic field detection circuit (10) is connected with described MCU (11) second input terminuss, first output terminal of this MCU (11) is connected with described signal generating circuit (14) input terminus, these MCU (11) second output terminals are connected with described liquid crystal display circuit (13) input terminus, described MCU (11) also with two-way connection of described communication interface circuit (12).
6, according to the described compound type electromagnetic water treatment system of claim 5, it is characterized in that: described signal generating circuit (14) is provided with frequency selective switch pilot circuit and high frequency generation circuit, wherein the frequency selective switch pilot circuit comprises crystal oscillator (U3) and frequency division chip (U4), described crystal oscillator (U3) high-pressure side (VDD) connects positive voltage, low pressure end (GND) ground connection, the output terminal of this crystal oscillator (U3) is connected with first clock signal terminal (1CLK) of described frequency division chip (U4), described frequency division chip (U4) also is provided with first and triggers input terminus (1Q) and second clock signal end (2CLK), described first triggering input terminus (1Q) and second clock signal end (2CLK) receive the control signal of described MCU (11) output respectively, described frequency division chip (U4) also is provided with first trigger end (1D) and the first reverse input terminus (1Q) that triggers is connected, second trigger end (2D) and second oppositely triggers input terminus (2Q) and is connected, and the actuate signal output terminal (2Q) of described frequency division chip (U4) is connected with the driving input terminus of described high frequency generation circuit;
Described high frequency generation circuit is provided with first triode (T1) and second triode (T2), wherein first triode (T1) is a NPN type triode, second triode (T2) is the positive-negative-positive triode, the base stage of described first triode (T1) and second triode (T2) all is connected with the actuate signal output terminal (2Q) of described frequency division chip (U4), the collector electrode of described first triode (T1) connects positive voltage, emtting electrode is connected with the emtting electrode of described second triode (T2), the grounded collector of this second triode (T2), the emtting electrode of described first triode (T1) also is connected with the grid of MOSFET HF switch (Q3), source electrode string the 3rd inductance (L3) back of this MOSFET HF switch (Q3) is connected grounded drain with positive voltage;
The source electrode of described MOSFET HF switch (Q3) also is connected with an end of the 4th inductance (L4), the other end string the 4th resistance (R4) back of the 4th inductance (L4) is connected with an end of the 3rd electric capacity (C3), connects positive voltage behind the other end string the 4th electric capacity (C4) of the 3rd electric capacity (C3).
7, according to claim 5 or 6 described compound type electromagnetic water treatment systems, it is characterized in that: an end of described the 3rd electric capacity (C3) is described metal bar (8a), and the other end of the 3rd electric capacity (C3) is the inwall of described high-frequency impulse process chambers (8).
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| CN2009101908357A CN101659488B (en) | 2009-09-11 | 2009-09-11 | Compound type electromagnetic water treatment system |
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| CN2009101908357A CN101659488B (en) | 2009-09-11 | 2009-09-11 | Compound type electromagnetic water treatment system |
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| CN101659488A true CN101659488A (en) | 2010-03-03 |
| CN101659488B CN101659488B (en) | 2011-08-31 |
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| CN2009101908357A Expired - Fee Related CN101659488B (en) | 2009-09-11 | 2009-09-11 | Compound type electromagnetic water treatment system |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102642977A (en) * | 2012-04-19 | 2012-08-22 | 上海万强科技开发有限公司 | Waste water treatment system |
| CN103117736A (en) * | 2012-11-13 | 2013-05-22 | 北京易艾斯德科技有限公司 | Circuit protection device capable of flexibly presetting action time |
| CN104528895A (en) * | 2014-12-26 | 2015-04-22 | 苏州安特实业有限公司 | Sewage magnetization treatment device |
| CN114988538A (en) * | 2022-07-14 | 2022-09-02 | 广西大学 | Circulating water sterilization system based on pulse electric field treatment technology |
| CN115615515A (en) * | 2022-12-19 | 2023-01-17 | 河北卧牛净水设备有限公司 | Water dispenser control system and water dispenser |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2659875Y (en) * | 2003-07-03 | 2004-12-01 | 周永才 | Alga killing and sterilizing machine using high voltage rotary pulse electric field |
| CN100560517C (en) * | 2007-08-10 | 2009-11-18 | 南京大学 | A kind of method of preprocessing coking wastewater by electrochemical oxidation flocculating composite technique |
| CN201501810U (en) * | 2009-09-11 | 2010-06-09 | 重庆大学 | Composite electromagnetic water treatment system device |
-
2009
- 2009-09-11 CN CN2009101908357A patent/CN101659488B/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102642977A (en) * | 2012-04-19 | 2012-08-22 | 上海万强科技开发有限公司 | Waste water treatment system |
| CN102642977B (en) * | 2012-04-19 | 2013-07-31 | 上海万强科技开发有限公司 | Waste water treatment system |
| CN103117736A (en) * | 2012-11-13 | 2013-05-22 | 北京易艾斯德科技有限公司 | Circuit protection device capable of flexibly presetting action time |
| CN103117736B (en) * | 2012-11-13 | 2016-04-13 | 北京易艾斯德科技有限公司 | The circuit protection device of flexible preset operate time |
| CN104528895A (en) * | 2014-12-26 | 2015-04-22 | 苏州安特实业有限公司 | Sewage magnetization treatment device |
| CN114988538A (en) * | 2022-07-14 | 2022-09-02 | 广西大学 | Circulating water sterilization system based on pulse electric field treatment technology |
| CN115615515A (en) * | 2022-12-19 | 2023-01-17 | 河北卧牛净水设备有限公司 | Water dispenser control system and water dispenser |
| CN115615515B (en) * | 2022-12-19 | 2023-03-10 | 河北卧牛净水设备有限公司 | Water dispenser control system and water dispenser |
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| Publication number | Publication date |
|---|---|
| CN101659488B (en) | 2011-08-31 |
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