CN101656523B - TE011-lambada/4-pi mode resonator with three-dimensional structure - Google Patents
TE011-lambada/4-pi mode resonator with three-dimensional structure Download PDFInfo
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- CN101656523B CN101656523B CN2009101022967A CN200910102296A CN101656523B CN 101656523 B CN101656523 B CN 101656523B CN 2009101022967 A CN2009101022967 A CN 2009101022967A CN 200910102296 A CN200910102296 A CN 200910102296A CN 101656523 B CN101656523 B CN 101656523B
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- 239000002184 metal Substances 0.000 claims abstract description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 230000008878 coupling Effects 0.000 claims abstract description 22
- 238000010168 coupling process Methods 0.000 claims abstract description 22
- 238000005859 coupling reaction Methods 0.000 claims abstract description 22
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 17
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 5
- 241000446313 Lamella Species 0.000 claims description 10
- 238000006880 cross-coupling reaction Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 238000004891 communication Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000004806 packaging method and process Methods 0.000 abstract 2
- 238000003786 synthesis reaction Methods 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 9
- 230000010355 oscillation Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004146 energy storage Methods 0.000 description 2
- 230000007123 defense Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
The present invention discloses a TE011-lambda/4-pi mode resonator with a three-dimensional structure. Two output ends of each active circuit are connected with two open-circuit ends corresponding to the lambda/4 resonator at the junction of a silicon chip layer and a packaging layer; two short-circuit ends of each lambda/4 resonator are connected with TE011 cylindrical wave guide resonator on a first conducting metal plate, and realize energy coupling with a cylindrical wave guide coupling groove seam by the lambda/4 resonator of the first conducting metal plate; a rectangular wave guide is assembled above a second conducting metal plate, and the two short-circuit ends of each lambda/4 resonator realize energy coupling with the cylindrical wave guide coupling groove seam by the rectangular wave guide of the second conducting metal plate, and output energy. The TE011-lambda/4-Pi mode resonator is suitable for power synthesis of silica-based Terahertz sources at the surface of the packaging layer, a passive circuit is separated from the active circuit, the quality factors of the resonator are higher, scale production can reduce the cost obviously, and the TE011-lambda/4-Pi mode resonator has application values in the fields of Terahertz personal wireless communication, low-power radars and the like.
Description
Technical field
The present invention relates to the Terahertz integrated circuit, especially relate to a kind of three-dimensional structure TE
011-λ/4-π mould resonator.
Background technology
At present, in the world the research of Terahertz is reached common understanding, think that Terahertz is a kind of radiation source that a lot of distinct advantages are arranged, Terahertz Technology is field, a very important intersection forward position, new opportunity being provided for technological innovation, national defense safety and the national economic development, is the sciemtifec and technical sphere that international academic community, industrial circle and national governments attach great importance to and pay close attention to.The generation of THz wave is the basis and the key issue of Terahertz Technology, in recent years, produces the Terahertz vibration based on existing integrated circuit technology and receives also in recent years that researchers are increasing to be paid close attention to.
From application demand, there is application potential in silica-based small-power Terahertz source very much.On the one hand, silica-based standard integrated circuit technology can realize the scale volume production, significantly reduces the cost of application system; On the other hand, oscillation source is integrated together with same other functional circuit of system based on silicon technology and becomes possibility.These 2 outstanding advantages make that silica-based small-power Terahertz source is very promising at aspects such as personal radio communication, small-power Terahertz radars.
Yet can silica-based Terahertz oscillation source be applied, and improving integrated power output is a key issue.When technology progress operating frequency improved, constantly dwindling of live width meaned that the electric current that can bear is more and more littler, thereby the power output capacity of oscillator is more and more littler.Improving the oscillator power output can be by improving the single tube hunting power and a plurality of oscillators being carried out synthetic two aspects of power start with.
Summary of the invention
At how a plurality of single tube Terahertz vibrations being carried out power in chip-scale synthesize, the object of the present invention is to provide a kind of three-dimensional structure TE to improve this problem of power output
011-λ/4-π mould resonator can improve the oscillator power output one or two order of magnitude.
The technical solution adopted for the present invention to solve the technical problems:
This resonator comprises two above active circuits on the silica-based lamella, and with λ/4 resonators of active circuit corresponding number, metal cylinder is operated in TE on encapsulated layer
011The TE that comprises first conductive metal sheet, cylindrical waveguide and second conductive metal sheet formation of mould
011Cylindrical waveguide resonator and the rectangular waveguide that is used for power output; Two output a, b of each active circuit are connected with the encapsulated layer intersection at silica-based lamella with two open ends of corresponding λ/4 resonators, two short-circuit ends of each λ/4 resonators are connected on first conductive metal sheet with the cylindrical waveguide resonator, realize the energy coupling by the λ on first conductive metal sheet/4 resonators and the cylindrical waveguide coupling line of rabbet joint, rectangular waveguide is assemblied on second conductive metal sheet, by rectangular waveguide on second conductive metal sheet and the coupling of the cylindrical waveguide coupling line of rabbet joint realization energy energy is exported from rectangular waveguide.
The useful effect that the present invention has is:
This three-dimensional structure TE
011λ/4 resonators in-λ/4-π mould resonator are made three-dimensional structure, are suitable for realizing on the package level of silica-based technology; The difference transmission lines that constitutes λ/4 resonators is vertical with substrate surface, with power line, the holding wire quadrature of the parallel distribution of substrate surface, the influence that intercouples is little, compares with the conventional two-dimensional difference transmission lines simultaneously, the three-dimensional structure difference transmission lines is away from silica-based lamella, and substrate loss influence reduces; TE
011The energy storage of cylindrical waveguide resonator (or Q value) is far above λ/4 resonators, so the Q value of this resonator is can more traditional λ/4 resonators a lot of greatly; This resonator can be effectively synthesizes the power of a plurality of λ/4 resonators, obtains to be higher than the vibration output of traditional λ/order of magnitude of 4 resonator power outputs.It is synthetic at the power of package level that the present invention is suitable for silica-based Terahertz source, passive circuit separates with active circuit, resonator quality factor height, large-scale production can significantly reduce cost, and has using value in fields such as Terahertz personal radio communication, small-power radars.
Description of drawings
Fig. 1 is TE disclosed by the invention
011-λ/4-π mould resonator longitudinal section.
Fig. 2 is based on the right active circuit implementation of inverter on the silicon chip among the present invention.
Fig. 3 is based on the right active circuit implementation of cross-couplings on the silicon chip among the present invention.
Fig. 4 is the λ/4 resonator tomographs among the present invention.
Fig. 5 is the sectional elevation that A-B dissects among Fig. 1.
Fig. 6 is the sectional elevation that the line C-D of Fig. 1 dissects.
Among the figure: 1, active circuit, 2, λ/4 resonators, 3, metal cylinder, 4, TE
011The cylindrical waveguide resonator, 4a, first conductive metal sheet, 4b, cylindrical waveguide, 4c, second conductive metal sheet, 5, rectangular waveguide, 6, rectangular waveguide and the circular waveguide coupling line of rabbet joint, 7, λ/4 resonators and the cylindrical waveguide line of rabbet joint that is coupled.
Embodiment
As Fig. 1, Fig. 4, Fig. 5, shown in Figure 6, resonator of the present invention comprises the above active circuit 1 of two on the silica-based lamella E, and with λ/4 resonators 2 of active circuit 1 corresponding number, metal cylinder 3 is operated in TE on encapsulated layer F
011The TE that comprises the first conductive metal sheet 4a, cylindrical waveguide 4b and second conductive metal sheet 4c formation of mould
011 Cylindrical waveguide resonator 4 and the rectangular waveguide 5 that is used for power output; Two output a of each active circuit 1, b is connected with the encapsulated layer intersection at silica-based lamella with two open ends of corresponding λ/4 resonators 2, two short-circuit ends of each λ/4 resonators 2 are connected on the first conductive metal sheet 4a with cylindrical waveguide resonator 4, realize the energy coupling by the λ on the first conductive metal sheet 4a/4 resonators and the cylindrical waveguide coupling line of rabbet joint 7, rectangular waveguide 5 is assemblied on the second conductive metal sheet 4c, realizes that by the rectangular waveguide on the second conductive metal sheet 4c and the cylindrical waveguide coupling line of rabbet joint 6 energy is coupled energy from rectangular waveguide 5 outputs.
As shown in Figure 2, described active circuit 1 is that inverter is to active circuit.
As shown in Figure 3, described active circuit 1 is that cross-couplings is to active circuit.
Described active circuit 1 number is decided by power output, and the big more number of power output is many more.
The operation principle of whole resonator is as follows:
(a) active circuit on the silicon chip 1 has negative resistance charactertistic, for the corresponding λ in the encapsulated layer/4 resonators 2 provide energy, also is whole TE011-λ/4-π mould resonator energy is provided;
(b) end open circuit that joins on two difference transmission lines of λ/4 resonators 2 and the silica-based lamella, realize short circuit with the end that TE011 cylindrical waveguide resonator 4 end faces in the encapsulated layer join by the first conductive metal sheet 4a, the magnetic line of force direction of short-circuit end is vertical with difference transmission lines short-circuit end two-end-point line, promptly at the radial direction of cylindrical waveguide resonator end face (the first conductive metal sheet 4a place circular face);
(c) along λ/4 resonators and the cylindrical waveguide coupling line of rabbet joint 7 of the TE011 cylindrical waveguide resonator 4 of this radial direction in encapsulated layer with the end face (the first conductive metal sheet 4a place circular face) that λ/4 resonators 2 join, realize the coupling of a plurality of λ/4 resonators 2 and TE011 cylindrical waveguide resonator 4 by the magnetic line of force, motivate the TE011 oscillation mode of cylindrical waveguide 4b, with the vibration homophase locking of all λ/4 resonators 2, and carry out power and synthesize;
(d) oscillation signal power after synthetic is coupled to rectangular waveguide 5 with energy and exports by rectangular waveguide on the second conductive metal sheet 4c and the cylindrical waveguide slit 6 that is coupled.
Be example with the TE011-λ/4-π resonator that is operated in 0.5THz below, wherein the active circuit number is 2, the execution mode of specifically setting forth various piece.
On silica-based lamella and encapsulated layer interface, two inverters that negative resistance is provided are connected circuit or two cross-couplings two ends to λ/4 resonators 2 of the corresponding number on circuit two ends a, b and the encapsulated layer, as shown in Figure 1, realize that negative resistance circuit provides the function of energy for resonant circuit.
λ/4 resonators are the abbreviation of λ/4 difference transmission lines resonators, are the difference transmission lines formation of λ/4 (λ is the medium medium wavelength) by length, end open circuit, a terminal shortcircuit.The implementation method of a plurality of λ in the encapsulated layer/4 resonators 2 is shown in Fig. 4 (from resonator system shown in Figure 1 bottom to end view that λ/4 resonators are observed).In Fig. 4, the direction consistent with the radius of λ/4 resonators, 2 short circuit face cylindrical waveguide 4b opened two lines of rabbet joint, in the both sides of each line of rabbet joint along two λ/4 conductors of the circumferential placement difference transmission lines of cylindrical waveguide 4b circumference.Add man-hour in actual fabrication, these two conductors can be made of the cylindrical metal via hole on the package level, metallic vias one end open circuit, and the other end is by the first conductive metal sheet 4a short circuit, and as shown in Figure 4, its corresponding sectional elevation is as shown in Figure 5.The processing of metallic vias is to realize easily in Si semiconductor technology.For the vibration of 0.5THz, if the relative dielectric coefficient ε of encapsulation medium material
r=4, then corresponding λ/4 are 75um, and promptly the differential transfer line length is 75um, and the radius of difference transmission lines can be got 10um.
The magnetic line of force direction of difference transmission lines short-circuit end is vertical with difference transmission lines short-circuit end two-end-point line, promptly at TE
011The radial direction of cylindrical waveguide resonator 4 end faces.In order to realize the coupling of two λ/4 resonators 2 and cylindrical waveguide 4b, motivate the TE of cylindrical waveguide 4b
011Mould, as shown in Figure 4, the first conductive metal sheet 4a that is connected with λ/4 resonators 2 along the cylindrical waveguide resonator 4 of cylindrical waveguide 4b radial direction in encapsulated layer opens λ/4 resonators and the cylindrical waveguide coupling line of rabbet joint 7.
The effect of metal cylinder 3 among Fig. 4 is that electric field, the Distribution of Magnetic Field that is used for making each λ/4 resonators satisfies very pure λ/4 resonator works states.TE
011The rectangular waveguide 5 of cylindrical waveguide resonator 4 tops is to be used for TE
011Power synthetic in the resonator 4 is exported, and the rectangular wall and the second conductive plate 4c intersection of rectangular waveguide 5 realize that by out rectangular waveguide and the cylindrical waveguide coupling line of rabbet joint 6 energy between the two is coupled.TE
011Cross-sectional the looking as shown in Figure 6 of cylindrical waveguide resonator 4 and rectangular waveguide 5 couplings.
When cylindrical waveguide is operated in TE
011During mould, have only along the magnetic field of cylindrical radial with along the circumferential electric field of cylinder, therefore when through-put power one timing, the thermal losses of tube wall descends dullness, so relative other patterns of its loss are minimum.
TE
011The energy storage of cylindrical waveguide resonator (or Q value) is far above λ/4 resonators, so frequency depends primarily on TE
011The resonance frequency of cylindrical waveguide resonator.As long as TE
011The cylindrical waveguide resonator can stably be worked, just the vibration of two λ of energy genlocing/4 oscillators.Because cylindrical waveguide resonator steady operation is in TE
011Mould, thus guarantee TE
011-λ/4-π resonator works in λ/4 oscillation modes with making two λ/4 resonator synchronism stabilities.
Claims (4)
1. three-dimensional structure TE
011-λ/4-π mould resonator is characterized in that: this resonator comprises two the above active circuits (1) on the silica-based lamella (E), goes up and λ/4 resonators (2) of active circuit (1) corresponding number at encapsulated layer (F), and metal cylinder (3) is operated in TE
011The TE that comprises first conductive metal sheet (4a), cylindrical waveguide (4b) and second conductive metal sheet (4c) formation of mould
011Cylindrical waveguide resonator (4) and be used for the rectangular waveguide (5) of power output, the silica-based lamella (E) with two above active circuit (1) one sides is connected with the encapsulated layer (F) of the λ with active circuit (1) corresponding number/4 resonators (2) one sides; Two output (a of each active circuit (1), b) two open ends with corresponding λ/4 resonators (2) are connected with the encapsulated layer intersection at silica-based lamella, two short-circuit ends of each λ/4 resonators (2) are connected on first conductive metal sheet (4a) with cylindrical waveguide resonator (4), realize the energy coupling by the λ on first conductive metal sheet (4a)/4 resonators and the cylindrical waveguide coupling line of rabbet joint (7), rectangular waveguide (5) is assemblied on second conductive metal sheet (4c), by rectangular waveguide on second conductive metal sheet (4c) and the coupling of the cylindrical waveguide coupling line of rabbet joint (6) realization energy energy is exported from rectangular waveguide (5).
2. a kind of three-dimensional structure TE according to claim 1
011-λ/4-π mould resonator is characterized in that: described active circuit (1) is that inverter is to active circuit.
3. a kind of three-dimensional structure TE according to claim 1
011-λ/4-π mould resonator is characterized in that: described active circuit (1) is that cross-couplings is to active circuit.
4. a kind of three-dimensional structure TE0 according to claim 1
11-λ/4-π mould resonator is characterized in that: described active circuit (1) number is that power output is decided, and the big more number of power output is many more.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009101022967A CN101656523B (en) | 2009-09-07 | 2009-09-07 | TE011-lambada/4-pi mode resonator with three-dimensional structure |
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| CN2009101022967A CN101656523B (en) | 2009-09-07 | 2009-09-07 | TE011-lambada/4-pi mode resonator with three-dimensional structure |
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| CN101656523B true CN101656523B (en) | 2011-09-07 |
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| CN101826839B (en) * | 2010-04-19 | 2011-12-07 | 浙江大学 | Inverter-based chaotic oscillating circuit |
| CN104506167B (en) * | 2014-12-01 | 2017-04-05 | 东南大学 | A kind of Terahertz electric impulse production device based on solid-state electronic |
| CN112557761A (en) * | 2019-09-25 | 2021-03-26 | 天津大学 | High-resolution simple terahertz near-field imaging array unit |
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| CN1639929A (en) * | 2002-02-28 | 2005-07-13 | 费姆托激光产品股份有限公司 | Device for generating terahertz radiation, and a semiconductor component |
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| CN1639929A (en) * | 2002-02-28 | 2005-07-13 | 费姆托激光产品股份有限公司 | Device for generating terahertz radiation, and a semiconductor component |
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