CN101656192B - 干蚀刻装置 - Google Patents
干蚀刻装置 Download PDFInfo
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- CN101656192B CN101656192B CN2008101184558A CN200810118455A CN101656192B CN 101656192 B CN101656192 B CN 101656192B CN 2008101184558 A CN2008101184558 A CN 2008101184558A CN 200810118455 A CN200810118455 A CN 200810118455A CN 101656192 B CN101656192 B CN 101656192B
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Priority Applications (1)
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CN2008101184558A CN101656192B (zh) | 2008-08-22 | 2008-08-22 | 干蚀刻装置 |
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CN2008101184558A CN101656192B (zh) | 2008-08-22 | 2008-08-22 | 干蚀刻装置 |
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CN101656192A CN101656192A (zh) | 2010-02-24 |
CN101656192B true CN101656192B (zh) | 2011-06-15 |
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CN2008101184558A Active CN101656192B (zh) | 2008-08-22 | 2008-08-22 | 干蚀刻装置 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103137520B (zh) * | 2011-11-30 | 2016-02-17 | 昆山中辰矽晶有限公司 | 半导体晶片气蚀装置 |
CN103280495B (zh) * | 2013-06-17 | 2016-08-17 | 奥特斯维能源(太仓)有限公司 | 一种控制背面刻蚀量的方法 |
CN104022006B (zh) * | 2014-05-23 | 2016-10-26 | 深圳市华星光电技术有限公司 | 一种干蚀刻设备及方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1534737A (zh) * | 2003-03-27 | 2004-10-06 | ���µ�����ҵ��ʽ���� | 干式蚀刻装置及干式蚀刻方法 |
JP2005333091A (ja) * | 2004-05-21 | 2005-12-02 | Nec Electronics Corp | 半導体製造装置 |
CN1850349A (zh) * | 2005-12-07 | 2006-10-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 进气喷嘴 |
CN100416756C (zh) * | 2005-12-05 | 2008-09-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体刻蚀装置 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1534737A (zh) * | 2003-03-27 | 2004-10-06 | ���µ�����ҵ��ʽ���� | 干式蚀刻装置及干式蚀刻方法 |
JP2005333091A (ja) * | 2004-05-21 | 2005-12-02 | Nec Electronics Corp | 半導体製造装置 |
CN100416756C (zh) * | 2005-12-05 | 2008-09-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体刻蚀装置 |
CN1850349A (zh) * | 2005-12-07 | 2006-10-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 进气喷嘴 |
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CN101656192A (zh) | 2010-02-24 |
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Owner name: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY Effective date: 20141209 Owner name: JINGDONGFANG SCIENCE AND TECHNOLOGY GROUP CO., LTD Free format text: FORMER OWNER: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY CO., LTD. Effective date: 20141209 |
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Free format text: CORRECT: ADDRESS; FROM: 100176 DAXING, BEIJING TO: 100015 CHAOYANG, BEIJING |
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Effective date of registration: 20141209 Address after: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee after: BOE Technology Group Co., Ltd. Patentee after: Beijing BOE Photoelectricity Science & Technology Co., Ltd. Address before: 100176 Beijing economic and Technological Development Zone, West Central Road, No. 8 Patentee before: Beijing BOE Photoelectricity Science & Technology Co., Ltd. |
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Effective date of registration: 20201202 Address after: 215200 No. 1700, Wujiang economic and Technological Development Zone, Suzhou, Jiangsu, Zhongshan North Road Patentee after: Gaochuang (Suzhou) Electronics Co.,Ltd. Patentee after: BOE TECHNOLOGY GROUP Co.,Ltd. Address before: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee before: BOE TECHNOLOGY GROUP Co.,Ltd. Patentee before: BEIJING BOE OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |