CN101638231A - High-temperature steam boron removal for preparing solar-grade silicon - Google Patents
High-temperature steam boron removal for preparing solar-grade silicon Download PDFInfo
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- CN101638231A CN101638231A CN200810041221A CN200810041221A CN101638231A CN 101638231 A CN101638231 A CN 101638231A CN 200810041221 A CN200810041221 A CN 200810041221A CN 200810041221 A CN200810041221 A CN 200810041221A CN 101638231 A CN101638231 A CN 101638231A
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- silicon
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- boron
- silica flour
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Abstract
The invention provides high-temperature steam boron removal for preparing solar-grade silicon, which expounds the principle of boron removal. Specific response schemes and equipment, as well as treatment requirements of silicon with different boron content, are designed according to a reaction principle. The new reaction principle has the advantages of significantly lowering requirements of reaction equipment, ensuring simple operation and enabling solar-grade polysilicon to be prepared by a low-cost physical purification method.
Description
Affiliated technical field
The present invention relates to the removal of boron in the silica flour,, the boron content of silicon is reduced especially to the pre-treatment of preparation solar energy level silicon.
Background technology
The preparation of solar energy level silicon at present has Siemens Method (SiHCl
3Rectification method) and Russian physical purification method (directional solidification method).Siemens Method is that silicon and HCl reaction generate SiHCl
3, purify by different rectification process again, at high temperature resolve into silicon at last.The silicon purity height that this method obtains can directly reach the requirement of solar energy level silicon, but cost is very high, has limited the large-scale popularization of polysilicon solar cell.Russia's physical purification method is to utilize the metallic impurity that segregation coefficient is little in the silicon to be enriched in end by directional freeze, and the polysilicon foreign matter content that solidifies is earlier obviously reduced.Segregation coefficient is more little, and refining effect is obvious more.But for segregation coefficient is 0.8 boron, the DeGrain that directional freeze is purified.The removal of boron becomes the indispensable prerequisite that can the directional freeze purification prepare solar energy level silicon, need carry out removing in advance boron to silica flour before directional freeze.
Summary of the invention
Silicon was handled 8 hours through mixing acid through grinding to form the silica flour below 80 orders.Silica flour is put into High Temperature Furnaces Heating Apparatus, feeds steam, exhausted air.Vapor temperature and furnace temperature are consistent, and slowly are warmed up to design temperature (500 ℃～1000 ℃) with furnace temperature, and system and air are isolated.Boron content in purification result and the silicon, granularity, temperature of reaction and the reaction times of silica flour are relevant.Through optimizing, can reach the ideal requirement.
The invention has the beneficial effects as follows that by the high-temperature steam reaction, boron content reduces, solve directional freeze and prepare solar-grade polysilicon does not have positive effect to boron a difficult problem.This processing unit requires low, operates pratical and feasiblely, has removed critical impurity element boron for the preparation of solar energy level silicon, and making cheaply the physical purification legal system be equipped with solar-grade polysilicon becomes possibility.
Claims (4)
1. silicon method of purification, the silica flour after the acid treatment is heated to 500 ℃～1000 ℃ high temperature under oxygen free condition, and slowly feeds through being heated to the water vapor of uniform temp, makes the boron in the silicon react reaction equation: 2B+6H with water
2O (g) → 2B (OH)
3+ 3H
2(g), resultant further generates volatile matter with the water reaction, makes content reduce reaction equation: B
2O
3+ H
2O (g) → 2HBO
2(g).
2. silicon method of purification according to claim 1 is characterized in that: silicon is ground to below 80 orders, through the peracid pre-treatment.Silicon is heated to below 1000 ℃ under oxygen free condition.Water vapor feeds and pasc reaction, and the reaction times is controlled according to the granularity and the boron content of silica flour.Water vapor is arranged into sealing pond by vapor pipe, prevents air admission.
3. the silica flour after the pyroprocessing can be through glycerol solution or 80～100 ℃ of processing of its similar component aqueous solution.
4. silicon method of purification according to claim 1 is characterized in that: conversion unit is the enclosed High Temperature Furnaces Heating Apparatus of a cover, directly directional freeze processing after the pyroreaction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810041221A CN101638231A (en) | 2008-07-31 | 2008-07-31 | High-temperature steam boron removal for preparing solar-grade silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810041221A CN101638231A (en) | 2008-07-31 | 2008-07-31 | High-temperature steam boron removal for preparing solar-grade silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101638231A true CN101638231A (en) | 2010-02-03 |
Family
ID=41613440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810041221A Pending CN101638231A (en) | 2008-07-31 | 2008-07-31 | High-temperature steam boron removal for preparing solar-grade silicon |
Country Status (1)
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| CN (1) | CN101638231A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104528726A (en) * | 2015-01-20 | 2015-04-22 | 邹祖康 | Water vapor silicon clearing method |
| CN108584962A (en) * | 2018-07-19 | 2018-09-28 | 江苏斯力康科技有限公司 | Acid vapor is purified metals silicon technology and surface equipment for purifying in advance |
| CN113336269A (en) * | 2021-05-17 | 2021-09-03 | 中国核电工程有限公司 | Preparation of U3O8Method and system |
-
2008
- 2008-07-31 CN CN200810041221A patent/CN101638231A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104528726A (en) * | 2015-01-20 | 2015-04-22 | 邹祖康 | Water vapor silicon clearing method |
| CN104528726B (en) * | 2015-01-20 | 2016-06-29 | 邹祖康 | A kind of clear silicon process of steam |
| CN108584962A (en) * | 2018-07-19 | 2018-09-28 | 江苏斯力康科技有限公司 | Acid vapor is purified metals silicon technology and surface equipment for purifying in advance |
| CN108584962B (en) * | 2018-07-19 | 2020-05-26 | 江苏斯力康科技有限公司 | Acid steam prepurification metallic silicon process and surface purification equipment |
| CN113336269A (en) * | 2021-05-17 | 2021-09-03 | 中国核电工程有限公司 | Preparation of U3O8Method and system |
| CN113336269B (en) * | 2021-05-17 | 2023-06-30 | 中国核电工程有限公司 | Preparation U 3 O 8 Method and system of (2) |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| DD01 | Delivery of document by public notice |
Addressee: Zheng Jinbiao Document name: Notification of Publication of the Application for Invention |
|
| DD01 | Delivery of document by public notice |
Addressee: He Nianyin Document name: Notification of before Expiration of Request of Examination as to Substance |
|
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20100203 |