CN101633674B - Organic metal borate of ferroelectric material and preparation method and application thereof - Google Patents
Organic metal borate of ferroelectric material and preparation method and application thereof Download PDFInfo
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- CN101633674B CN101633674B CN 200910041798 CN200910041798A CN101633674B CN 101633674 B CN101633674 B CN 101633674B CN 200910041798 CN200910041798 CN 200910041798 CN 200910041798 A CN200910041798 A CN 200910041798A CN 101633674 B CN101633674 B CN 101633674B
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- ferroelectric material
- organic metal
- ferroelectric
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Abstract
The invention discloses organic metal borate of a ferroelectric material and a preparation method and applications thereof. The molecular formula of borate is C8H34B10N6NiO20, the space group is C2(No.5), and the unit cell parameter is indicated as follows: alpha=gamma=90.00 degrees, belta=96.875 (10) degrees, Z=2 and unit cell volume V=1445.6(4) angstroms<3>; the ferroelectric material is prepared under the hydrothermal condition by in situ synthesis; reagents of nickel dichloride (NiCl2), boracic acid (H3BO3) and diethylenetriamine (C4H13N3) serve as raw materials, and water and pyridine are used as solvents; the ferroelectric material is applied to a pagination unit for storing and recovering information, transmitting optical information, displaying image and holography and is applied to storing holography of a ferroelectric light valve array.
Description
Technical field
The present invention relates to a kind of organic metal borate of ferroelectric material and its preparation method and application.
Background technology
Ferroelectric material is a kind of multifunctional material that has simultaneously the performances such as ferroelectric, piezoelectricity, pyroelectricity, electric light, nonlinear optics.So-called ferroelectric material refers to that crystalline structure just has the spontaneous polarization phenomenon when not adding external electric field, the material that the direction of its spontaneous polarization can be reversed or redirect by extra electric field.This specific character of material is called as " ferroelectricity " or " ferroelectric effect ".In the last few years, the ferroelectric material development is very rapid, electronic technology, laser technology, infrared detection technique, ultrasonic (and microwave acoustics) technology, Solid State memory and technique of display and Other Engineering technical elements have been widely used in, and the ferroelectric material of research and production excellent property is again the basis of the functional devices such as various ferroelectric, the piezoelectricity of development, thermoelectricity and electric light.Therefore, very active to development and the exploration of ferroelectric material in the world at present.
People mainly concentrate on inorganic materials research and the application of ferroelectric material at present.The inorganic iron electric material due to have high strength, high rigidity, the advantages such as high temperature resistant, performance is steady in a long-term, long service life are widely used, but the condition that needs the high vacuum comparatively high temps due to the making of inorganic iron conductive film, make cost of manufacture comparatively expensive, be difficult for making large area film and need to adopt mechanically resistant material to make substrate, limited significantly its application.In recent years, the organic ferroelectric film also gains great popularity, mainly owing to comparing with the inorganic iron electric material, it has makes easily that large area film, cost of manufacture are low, low temperature manufacturing conditions, relatively large molecular hyperpolarizability, large Electrostrictive strain ability, with the anti-acoustic resistance matching of air, unique advantages such as superiority is arranged, and can make substrate with the plastics of softness due to its low temperature manufacturing conditions simultaneously.But because the ferroelectric percentage coupling of Organic Iron electric material is lower, relative permittivity is less, the permanent stability relative mistake of performance, function some, thereby make its application be subject to larger restriction.Therefore, research novel ferroelectric material has become the research emphasis of current ferroelectric material with the inherent defect that overcomes inorganic or Organic Iron electric material.
In recent years, organic metal borate with ferroelectric effect has caused people's very big research interest, this is through well-designed and regulation and control due to this class hybrid material, can reach and raise inorganic materials and the organic materials effect of growing and keeping away short " heterosis, hybrid vigor " of its shortcoming of advantage separately, and the interaction between Inorganic Boron oxygen polyanion and organic formwork component, can make materials present novel character.
Summary of the invention
Purpose of the present invention just is to provide a kind of organic metal borate of ferroelectric material, and this borate molecular formula is C
8H
34B
10N
6NiO
20, spacer is C
2(No.5), cell parameter is
α=γ=90.00 °, β=96.875 (10) °, Z=2, unit-cell volume
The present invention also provides a kind of preparation method of organic metal borate of ferroelectric material, and the method for synthesizing by original position under hydrothermal condition makes, reactant nickelous chloride (NiCl
2), boric acid (H
3BO
3), diethylenetriamine (C
4H
13N
3) as raw material, its mol ratio is 1: 27: 25, adopts water and pyridine as solvent, hydro-thermal reaction is warming up to 200 ℃, naturally cooling under room temperature; Boric acid, nickelous chloride and diethylenetriamine generation reaction in－situ, the monocrystalline of the organic metal borate of having grown.
The present invention also provides a kind of purposes of organic metal borate of ferroelectric material: this material is applied to store and recovery information, transmission light information, image show and holographic in pagination device and the storage of making holographic of ferroelectric light valve array.
The invention has the beneficial effects as follows:
Organic metal borate provided by the invention is the crystal that in-situ synthetic method grows under hydrothermal condition.Material preparation process of the present invention is simple, productive rate is high and the advantage such as good reproducibility.
This borate is a kind of novel ferroelectric crystal material, and the advantage of this material is not to be soluble in general solvent, heat decomposition temperature point high (can be stabilized to 250 ℃ in air atmosphere), and crystal grain is even.
Embodiment
1, the preparation of compound
Take nickelous chloride (NiCl
2) 0.36g, boric acid (H
3BO
3) 2.74g, measure diethylenetriamine (C
4H
13N
3) 2.0ml, pyridine (C
5H
5N) 8.0ml, water (H
2O) 1.0ml is as raw material, and its mol ratio is 1: 27: 25: 137: 17, stir 5min, and in the reactor of the airtight 28mL that packs into, be warming up to 200 ℃, constant temperature 2 days, naturally cooling at ambient temperature after taking-up just can obtain crystal.Analyze through the X ray single crystal diffraction, determine that this crystal is [Ni (C
4H
10N
2) (C
2H
8N
2)
2] [B
5O
6(OH)
4]
2
2, performance test
We study discovery to the organic metal borate that obtains: the polarizability P of this title complex shows to have obvious ferroelectric effect, Pr=0.075 μ C/cm with the relation curve of executing electric field strength E outward
2, Ps=0.01 μ C/cm
2
Claims (1)
1. the preparation method of an organic metal borate of ferroelectric material, it is characterized in that: borate makes by the method that original position is synthesized under hydrothermal condition, reactant nickelous chloride, boric acid, diethylenetriamine is as raw material, its mol ratio is 1: 27: 25, adopts water and pyridine as solvent, and hydro-thermal reaction is warming up to 200 ℃, naturally cooling under room temperature, obtain crystal, this crystal is described organic metal borate, and its structural formula is: [Ni (C
4H
10N
2) (C
2H
8N
2)
2] [B
5O
6(OH)
4]
2, molecular formula is: C
8H
34B
10N
6NiO
20, spacer is C
2(No.5), cell parameter is
α=γ=90.00 °, β=96.875 (10) °, Z=2, unit-cell volume
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910041798 CN101633674B (en) | 2009-08-11 | 2009-08-11 | Organic metal borate of ferroelectric material and preparation method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910041798 CN101633674B (en) | 2009-08-11 | 2009-08-11 | Organic metal borate of ferroelectric material and preparation method and application thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101633674A CN101633674A (en) | 2010-01-27 |
| CN101633674B true CN101633674B (en) | 2013-11-06 |
Family
ID=41593026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200910041798 Expired - Fee Related CN101633674B (en) | 2009-08-11 | 2009-08-11 | Organic metal borate of ferroelectric material and preparation method and application thereof |
Country Status (1)
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|---|---|
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106565754A (en) * | 2015-10-10 | 2017-04-19 | 宁波大学 | Hydration L-malic acid NdB ferroelectric function material and preparation method thereof |
| CN106986350A (en) * | 2017-03-30 | 2017-07-28 | 广东工业大学 | A kind of double salt Boratex ammonium and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5859274A (en) * | 1997-10-30 | 1999-01-12 | Advanced Technology Materials, Inc. | Anhydrous mononuclear tris(β-diketonate) bismuth compositions for deposition of bismuth-containing films, and method of making the same |
-
2009
- 2009-08-11 CN CN 200910041798 patent/CN101633674B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5859274A (en) * | 1997-10-30 | 1999-01-12 | Advanced Technology Materials, Inc. | Anhydrous mononuclear tris(β-diketonate) bismuth compositions for deposition of bismuth-containing films, and method of making the same |
Non-Patent Citations (6)
| Title |
|---|
| Z.-H. Liu, et al..Crystal structure of bis(diethylenetriamine)cobalt(II)tetrahydroxypentaborate, [Co(C4H13N3)2][B5O6(OH)4]2.《Z. Kristallogr. NCS》.2005,第220卷第555-556页. * |
| Z.-H.Liu et al..Crystal structure of bis(diethylenetriamine)cobalt(II)tetrahydroxypentaborate |
| Zhi-Hong Liu, et al..Synthesis, crystal structure and vibrational spectroscopy of a novel mixed ligands Ni(II) pentaborate: [Ni(C4H10N2)(C2H8N2)2][B5O6(OH)4]2.《Inorganica Chimica Acta》.2005,第359卷第519-524页. * |
| Zhi-HongLiu et al..Synthesis |
| 张健健.以过渡金属配合物为模板剂的无机-有机杂化硼酸盐的合成、结构及表征.《中国优秀博硕士学位论文全文数据库（硕士） 工程科技I辑》.2006,(第10期),B014-54. * |
| 张健健等.[Zn(C4H13N3)2][B5O6(OH)4]2的水热合成、晶体结构和振动光谱.《陕西师范大学学报(自然科学版)》.2005,第33卷(第4期),第78-81页. * |
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|---|---|
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Granted publication date: 20131106 Termination date: 20210811 |