CN101630810B - Littrow-structural grating external cavity semiconductor laser and frequency tuning method - Google Patents
Littrow-structural grating external cavity semiconductor laser and frequency tuning method Download PDFInfo
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Abstract
The invention discloses a Littrow-structural grating external cavity semiconductor laser and a frequency tuning method. In the grating external cavity semiconductor laser, after laser emitted by a semiconductor laser tube (1) is aligned by an aspherical mirror (3) and incident onto a grating (12), one-level diffraction light of the grating (12) and incident light are collinear to reversely return to the semiconductor laser tube (1) along the same way; zero-level diffraction of the grating (12) or the mirror reflection light of the grating (12) is reflected by a reflector (5) and then output; and when laser frequency selection is carried out by rotating the grating (12), the reflector (5) and the grating (12) integrally rotate, and the reflection surface of the reflector (5) and the diffraction surface of the grating (12) form an included angle. The laser and the method greatly reduce the translation change of light beams when the grating and the reflector rotate.
Description
Technical field
The present invention relates to grating feedback external cavity semiconductor laser, be meant a kind of Littrow structure fringe feedback external cavity semiconductor laser especially, the frequency or the wavelength tuning of grating feedback external cavity semiconductor laser reduce the method for the light beam translation of tuning generation.
Background technology
Existing Littrow structure ECLD, as shown in Figure 1.Comprise: semiconductor laser tube (LD) 1, aspheric surface collimating lens (AL) 3, diffraction grating (GT) 12 and speculum (M) 5.
Wherein, N representes the grating normal, and θ representes incidence angle or the angle of diffraction (diffracted beam and incident beam conllinear reverse) of the incident beam of laser behind aspheric surface collimating lens 3 collimations on grating that semiconductor laser tube 1 is sent.In Littrow structure ECLD, the laser that semiconductor laser tube 1 is sent is incident on the diffraction grating 12 behind aspheric surface collimating lens 3 collimations.The first-order diffraction light of diffraction grating 12 and incident light conllinear are reverse to be turned back in the semiconductor laser tube 1 along former road, and the mirroring light of the Zero-order diffractive of diffraction grating 12 or grating 12 is as output light.
In Littrow structure ECLD, the tuning of optical maser wavelength or frequency is through rotation diffraction grating 12, and the incident of 12 pairs of light of change grating and the angle of diffraction realize.Yet, in the process of rotating shutter 12, also will change as the catoptrical direction of grating mirror of exporting light thereupon.For the direction of eliminating output beam changes, people have adopted the parallel speculum 5 of additional and grating 12.This speculum 5 and grating 12 are fixed into the surperficial parallel of one and reflecting surface and grating 12.When grating 12 rotations, speculum 5 is rotation thereupon also, thereby the direction of having eliminated output beam when passing through rotating shutter 12 tuned frequencies changes.Yet this speculum 5 is actually and changes the translation variation that is converted into light beam to the direction of output beam.Just through rotating shutter 12 tuning laser frequencies the time, output beam is with the translation of occurrence positions.This is very disadvantageous for many applications that the accuracy and the stability thereof of light-beam position are had higher requirements.
Summary of the invention
In view of this, the present invention proposes a kind of Littrow structure fringe ECLD and frequency tuning method thereof, reduces the light beam translation variation that frequency tuning produces.
Frequency tuning method based on above-mentioned purpose Littrow structure fringe provided by the invention ECLD; In this grating external cavity semiconductor laser, the laser that semiconductor laser tube is sent is incident on the grating behind the aspherical mirror collimation; The first-order diffraction light of grating and incident light conllinear are reverse to be turned back in the semiconductor laser tube along former road; The mirroring light of the Zero-order diffractive of grating or grating is exported after mirror reflects, wherein, and through rotating said grating when carrying out the laser frequency frequency-selecting; Said speculum and grating are integral rotation, and the reflecting surface of this speculum and grating diffration surface have angle.
Optional, the angle β that the reflecting surface of the said speculum of this method becomes with the grating diffration surface satisfies relational expression u * cos (θ)+w * cos (θ+β)=0;
Wherein, the absolute value of w is the distance of the common centre of rotation of grating and speculum to the plane at the reflecting surface place of speculum; The absolute value of u is the distance of the common centre of rotation of grating and speculum to plane, place, optical grating diffraction surface; θ representes that semiconductor laser tube sends and be incident on the incidence angle or the angle of diffraction that the incident beam on the grating forms;
The sign convention of u and w does, if said incident or diffracted ray and the homonymy of center of rotation at its datum plane, then for just, otherwise is to bear.Wherein, the datum plane of u is planar S G, and the datum plane of w is planar S M; The sign convention of angle β does, if being rotated counterclockwise speculum, angle β forms, and then for just, otherwise for bearing.
Optional, the said position of regulating said center of rotation at said semiconductor laser through the center of rotation governor motion of this method; And make speculum through rotating governor motion) with grating serve as an axle rotation with the tuning center of rotation of said standard.
Optional, said grating of this method and speculum are to cross said center of rotation and to serve as that axle rotates perpendicular to the straight line of light path face.
Based on above-mentioned purpose, the invention allows for a kind of Littrow structure fringe ECLD, comprising: semiconductor laser tube, collimating lens, grating and speculum; The laser that said semiconductor laser tube is sent is behind the aspherical mirror collimation; Be incident on the grating; The first-order diffraction light of grating and incident light conllinear are reverse to be turned back in the semiconductor laser tube along former road, and the mirroring light of the Zero-order diffractive of grating or grating is exported after mirror reflects, wherein; Said speculum and grating are fixed into one, and the reflecting surface of this speculum and grating diffration surface have angle.
Optional, in this grating external cavity semiconductor laser, the angle β that the reflecting surface of speculum becomes with the grating diffration surface satisfies relational expression u * cos (θ)+w * cos (θ+β)=0;
Wherein, the absolute value of w is the distance of the common centre of rotation of grating and speculum to the plane at the reflecting surface place of speculum; The absolute value of u is the distance of the common centre of rotation of grating and speculum to plane, place, optical grating diffraction surface; θ representes that semiconductor laser tube sends and be incident on the incidence angle or the angle of diffraction that the incident beam on the grating forms;
The sign convention of u and w does, if said incident or diffracted ray and the homonymy of center of rotation at its datum plane, then for just, otherwise is to bear.Wherein, the datum plane of u is planar S G, and the datum plane of w is planar S M; The sign convention of angle β does, if being rotated counterclockwise deflection mirror, angle β forms, and then for just, otherwise for bearing.
Optional, in this grating external cavity semiconductor laser, said grating and speculum are to cross said center of rotation and to serve as that axle rotates perpendicular to the straight line of light path face.
Optional, in this grating external cavity semiconductor laser, in said semiconductor laser, be provided with the center of rotation governor motion, be used to regulate the position of said center of rotation;
Rotate governor motion, making said speculum and grating serves as that axle rotates with the tuning center of rotation of said standard.
Optional, in this grating external cavity semiconductor laser, said center of rotation governor motion is the center of rotation micrometer adjusting screw, said rotation governor motion is the tuning micrometer adjusting screw of laser frequency; And also include the moving plate of adjusting bracket and decide plate with the adjusting bracket that is fixed on the base plate; Speculum and grating are fixed on the moving plate of adjusting bracket, and tuning micrometer adjusting screw of laser frequency and center of rotation micrometer adjusting screw are arranged on said adjusting bracket to be decided on the plate;
Said center of rotation is arranged on the central axis of center of rotation micrometer adjusting screw, moves the position of adjustment center of rotation through regulating the moving plate of center of rotation micrometer adjusting screw drive adjusting bracket; Through regulating the moving plate of the tuning micrometer adjusting screw drive of laser frequency adjusting bracket speculum and grating on it are rotated.
Optional, in this grating external cavity semiconductor laser, said rotation governor motion also comprises: the adjusting bracket piezoelectric ceramic, be arranged between moving plate of said adjusting bracket and the tuning micrometer adjusting screw of laser frequency, and meticulous adjusting is done in the rotation that is used for the moving plate of adjusting bracket.
Optional, in this grating external cavity semiconductor laser, said grating is diffraction grating or transmission grating or holographic grating.
Saidly can find out from top; Littrow structure fringe ECLD provided by the invention and frequency tuning method thereof; Overcome in the Littrow structure fringe ECLD; Speculum must the thought binding parallel with grating, creationaryly between mirror reflects plane and optical grating diffraction plane, leaves certain angle, and the translation that has reduced light beam when rotating grating and speculum carry out frequency tuning significantly changes.Make that output beam has solved the light beam translation problem that perplexs those skilled in the art for a long time with the translation of occurrence positions hardly through rotating shutter tuning laser frequency the time.To light-beam position and the stable application that has higher requirements thereof laser tunable and that light-beam position is more stable is provided for many.
Description of drawings
Fig. 1 is the structural representation of Littrow structure ECLD;
Fig. 2 reduces the structural representation of pattern displacement Littrow structure ECLD embodiment for the present invention;
Fig. 3 has the structural representation of the Littrow structure ECLD embodiment of governor motion for the present invention.
Embodiment
With reference to the accompanying drawings the present invention is more comprehensively described, exemplary embodiment of the present invention wherein is described.
The Littrow structure ECLD structure of one embodiment of the invention is as shown in Figure 2.Comprise: semiconductor laser tube 1, collimating lens 3, diffraction grating 12 and deflection mirror 5.Diffraction grating 12 constitutes one with deflection mirror 5, can rotate around the tuning center of rotation Pq of the accurate synchronizing frequency of grating together, realizes the tuning of laser frequency.
The laser that semiconductor laser tube 1 is sent is incident on the diffraction grating 12 behind aspheric surface collimating lens 3 collimations.The first-order diffraction light of diffraction grating 12 and incident light conllinear are reverse to be turned back in the semiconductor laser tube 1 along former road, and the mirroring light of the Zero-order diffractive of diffraction grating 12 or grating 12 is as the output after deflection mirror 5 reflections of output light.
Wherein, N representes the grating normal, and θ representes incidence angle or the angle of diffraction (diffracted beam and incident beam conllinear reverse) of the incident beam of laser behind aspheric surface collimating lens 3 collimations on grating that semiconductor laser tube 1 is sent.SL representes surface, semiconductor laser tube 1 equivalence back; The center line of the said light beam that it sends perpendicular to semiconductor laser tube 1; (because factor affecting such as the gain media that receives semiconductor laser tube 1 and collimating lens 3 refractive indexes, this optical distance is compared with the actual range that semiconductor laser tube 1 is ordered to said Q and is omited length to the optical distance on surface, semiconductor laser tube 1 back to equal the Q point apart from the distance of the intersection point Q of said beam center line and grating surface.That is to say that planar S L is surperficial further from the Q point with respect to semiconductor laser tube 1 back of reality); SG representes plane, place, optical grating diffraction surface; SM representes the plane at the reflecting surface place of deflection mirror 5.
Describe for ease, set up coordinate system xOy at the light path face, the x axle is the said beam center line that semiconductor laser tube 1 is sent, and direction is said beam Propagation direction; The y axle is the intersection of planar S L and light path face, and direction is the clockwise 90 degree directions of x axle; Origin of coordinates O is the center line of said light beam and the intersection point of planar S L.The absolute value of x is the distance of the common centre of rotation P of grating 12 and speculum 5 to planar S L; The absolute value of w is the distance of the common centre of rotation P of grating 12 and speculum 5 to planar S M; The absolute value of u is the distance of the common centre of rotation P of grating 12 and speculum 5 to planar S G; The absolute value of y is that the common centre of rotation P of grating 12 and speculum 5 is to the incident of grating 12 or the distance of diffracted ray.β is the angle of planar S G and planar S M.Grating 12 and deflection mirror 5 are to cross said center of rotation P and to serve as that axle rotates perpendicular to the straight line of light path face.
In embodiments of the present invention, the reflecting surface SM of deflection mirror 5 and grating 12 Difraction surface SG are uneven.
And through studying for a long period of time and a large amount of experiment discoveries, its angle is that β, incidence angle or the angle of diffraction are that θ, said center of rotation P satisfy following relationship to planar S G's apart from u apart from w, said center of rotation P to planar S M's:
u×cos(θ)+w×cos(θ+β)＝0(1)
By shown in Figure 2, parameters u and the sign convention of w of expression mutual alignment do in the following formula, if said incident or diffracted ray and the homonymy of center of rotation at its datum plane, then for just, otherwise are to bear.Wherein, the datum plane of u is planar S G, and the datum plane of w is planar S M.The sign convention of angle β does, form if angle β is rotated counterclockwise deflection mirror, then for just, otherwise, the deflection mirror 5 that turns clockwise form for bearing, can find out that angle β among Fig. 2 is for just.
Formula (1) expression, the ratio of the selection at β angle and u and w and the incident or the diffraction angle of grating are relevant.
Draw through a large amount of experiments, when satisfying above-mentioned formula, when rotating shutter 12 and deflection mirror 5 were exported light frequency and regulated, the output light translation that is produced changed the parallel situation of grating 12 and deflection mirror 5 that is significantly less than.
For realizing above-mentioned adjusting, in one embodiment of the present of invention, the center of rotation governor motion is set in said semiconductor laser, be used to regulate the position of said center of rotation P; And be provided with and rotate governor motion to make deflection mirror 5 and grating 12 serve as that axle rotates with the tuning center of rotation P of said standard.
Below an example be elaborated; As shown in Figure 3, Littrow structure ECLD comprises: semiconductor laser tube 1, semiconductor laser tube is heat sink 2, aspheric surface collimating lens 3, collimation mirror holder 4, deflection mirror 5, the moving plate 6 of adjusting bracket, adjusting bracket are decided plate 7, the tuning micrometer adjusting screw of laser frequency 8, center of rotation micrometer adjusting screw 9, adjusting bracket piezoelectric ceramic 10, base plate 11 and diffraction grating 12.
Semiconductor laser tube 1 adopts temperature sensor and semiconductor cooler to realize temperature control through heat sink 2.Collimating lens 3 is adjusted through mirror holder 4 and is fixing.Speculum 5 is fixed on the moving plate 6 of adjusting bracket with diffraction grating 12, and its direction can be adjusted through the adjustment screw 8 and 9 that adjusting bracket is decided on the plate 7, also can carry out fine tuning through the piezoelectric ceramic 10 on the moving plate 6.The frequency-selecting effect of exocoel and grating 12 can rotate through the moving plate 6 of rotation adjusting bracket and move center P rotation realization.The angle that for example changes speculum 5 through micrometer adjusting screw 8 is carried out coarse adjustment, or carries out fine tuning through apply control voltage at piezoelectric ceramic 10.The adjusting bracket that adjustment screw 8 and 9 are housed is decided plate 7 and is fixed on the base plate 11.
Wherein, center of rotation micrometer adjusting screw 9 is said center of rotation governor motion; The tuning micrometer adjusting screw 8 of laser frequency is said rotation governor motion with adjusting bracket piezoelectric ceramic 10.Rotate center P in the present embodiment and can be arranged on the central axis of center of rotation micrometer adjusting screw 9, move the position of adjustment center of rotation P through regulating the moving plate 6 of center of rotation micrometer adjusting screw 9 drive adjusting brackets.Through regulating the moving plate 6 of the tuning micrometer adjusting screw 8 drive adjusting brackets of laser frequency the speculum 5 on it is rotated with diffraction grating 12, and can further finely tune through adjusting bracket piezoelectric ceramic 10.
Power 30mW wavelength is the laser beam that the semiconductor laser tube 1 of 689nm is sent; Through focal length is 4mm; Numerical aperture is behind 0.6 aspheric surface collimating lens 3 collimations; To be incident on incisure density be 1800g/mm, have suitable diffraction efficiency, groove area size is on the blazed diffraction grating 12 of 6mm for 12.5mm * 12.5mm, thickness, the zeroth order diffraction light of grating 12 or directly mirroring light as the output beam of laser.The first-order diffraction light of grating 12 is along turning back in the semiconductor laser tube 1 with the reverse path of former incident beam conllinear.
In the present embodiment, the parameter of Littrow structure ECLD is chosen as: θ=38.3 °, and u=-18.8mm, w=23.1mm can draw β=11.8 ° according to formula (1).For the conventional method in past, promptly if keep the light length a between grating 12 and the deflection mirror 5 constant, then there is w=24.2mm β=0 °.Be the basis with these parameters, the light beam translation amount that relatively produces below.
The wavelength tuning range of consideration ± 30nm, the moving plate 6 of corresponding adjusting bracket, promptly the angle variable quantity of grating 12 and deflection mirror 5 is ± 2 °.If select conventional method in the past for use, can obtain the light beam translation amount is 0.6mm.If adopt design of the present invention, the light beam translation amount is-6.9 μ m.Compare with the past conventional method, the translation of light beam has reduced more than 80 times.This has covered the tunable wave length scope of most of Tunable External Cavity Semiconductor Laser.
If the wavelength tuning range of consideration ± 10nm, the moving plate 6 of corresponding adjusting bracket, promptly the angle variable quantity of grating 12 and deflection mirror 5 is ± 0.65 °.If select conventional method in the past for use, can obtain the light beam translation amount is 0.2mm.If adopt design of the present invention, the light beam translation amount is-0.78 μ m.Compare with the past conventional method, the translation of light beam has reduced more than 240 times.
And if the wavelength tuning range of consideration ± 5nm, the moving plate 6 of corresponding adjusting bracket, promptly the angle variable quantity of grating 12 and deflection mirror 5 is ± 0.33 °.If select conventional method in the past for use, can obtain the light beam translation amount is 0.1mm.If adopt design of the present invention, the light beam translation amount is-0.2 μ m.Compare with the past conventional method, the translation of light beam has reduced more than 490 times.
And if the wavelength tuning range of consideration ± 2nm, the moving plate 6 of corresponding adjusting bracket, promptly the angle variable quantity of grating 12 and deflection mirror 5 is ± 0.13 °.If select conventional method in the past for use, can obtain the light beam translation amount is 40 μ m.If adopt design of the present invention, the light beam translation amount is-32nm.Compare with the past conventional method, the translation of light beam has reduced more than 1200 times.
Can find out that tuning range is more little, the degree that displacement is reduced is big more.This is that the surplus function characteristic that revolves of change in displacement determines.The displacement of laser beam in fact, is not at this moment felt.Under many situation, this displacement is mainly by other conditional decision, or covered by the influence of other factors, for example the stability of mechanical structure, variations in temperature, extraneous vibration and audio-frequency noise etc.
Semiconductor laser tube 1 in the such scheme also can be selected other wavelength for use, other power output; Grating 12 also can adopt the grating of other type, such as: transmission grating or holographic grating etc. also can be made up of other incisure density and big or small thickness; Collimating lens also can adopt other focal length and numerical aperture, and u and w value also can adopt other numerical value, and the common centre of rotation P of grating 12 and deflection mirror 5 also can be selected in other position.
Description of the invention provides for example with for the purpose of explaining, and is not the disclosed form that exhaustively perhaps limit the invention to.A lot of modifications and variation are obvious for those of ordinary skill in the art.Selecting and describing embodiment is for better explanation principle of the present invention and practical application, thereby and makes those of ordinary skill in the art can understand the various embodiment that have various modifications that the present invention's design is suitable for special-purpose.
Claims (8)
1. the frequency tuning method of a Littrow structure fringe ECLD; In this grating external cavity semiconductor laser; The laser that semiconductor laser tube (1) is sent is behind aspheric surface collimating lens (3) collimation; Be incident on the grating (12), the first-order diffraction light of grating (12) and incident light conllinear are reverse to be turned back in the semiconductor laser tube (1) along former road, the output after speculum (5) reflection of the mirroring light of the zero order diffracted light of grating (12) or grating (12); It is characterized in that; Through rotating said grating (12) when carrying out the laser frequency frequency-selecting, said speculum (5) is integral rotation with grating (12), and the angle β of the Difraction surface of the reflecting surface of this speculum (5) and grating (12) formation satisfies relational expression u * cos (θ)+w * cos (θ+β)=0;
Wherein, the absolute value of w is the distance of the common centre of rotation of grating (12) and speculum (5) to the plane at the reflecting surface place of speculum (5); The absolute value of u is the distance of the common centre of rotation of grating (12) and speculum (5) to plane, grating (12) Difraction surface place; θ representes that semiconductor laser tube (1) sends and be incident on incidence angle or first-order diffraction angle that the incident light on the grating (12) forms, and wherein u and w are not 0 simultaneously;
The sign convention of u does, if incide the incident light and the homonymy of common center of rotation at its datum plane of grating (12), then for just, otherwise for negative, wherein, the datum plane of u is the planar S G that grating (12) Difraction surface belongs to; The sign convention of w does, if incide the zero order diffracted light and the homonymy of common center of rotation at its datum plane of speculum (5), then for just, otherwise for negative, the datum plane of w is the planar S M that the reflecting surface of speculum (5) belongs to; The sign convention of angle β does, if being rotated counterclockwise speculum, angle β forms, and then for just, otherwise for bearing.
2. method according to claim 1 is characterized in that, said grating (12) and speculum (5) are to cross said common centre of rotation and to serve as that axle rotates perpendicular to the straight line of light path face.
3. method according to claim 2 is characterized in that, regulates the position of said common centre of rotation through the center of rotation governor motion at said semiconductor laser; And make speculum (5) and grating (12) to cross said common centre of rotation and to serve as an axle rotation perpendicular to the straight line of light path face through rotating governor motion.
4. a Littrow structure fringe ECLD comprises: semiconductor laser tube (1), aspheric surface collimating lens (3), grating (12) and speculum (5); The laser that said semiconductor laser tube (1) is sent is behind aspheric surface collimating lens (3) collimation; Be incident on the grating (12); The first-order diffraction light of grating (12) and incident light conllinear are reverse to be turned back in the semiconductor laser tube (1) along former road; The output after speculum (5) reflection of the mirroring light of the zero order diffracted light of grating (12) or grating (12); It is characterized in that said speculum (5) and grating (12) are fixed into one, and the angle β of the Difraction surface of the reflecting surface of this speculum (5) and grating (12) formation satisfies relational expression u * cos (θ)+w * cos (θ+β)=0;
Wherein, the absolute value of w is the distance of the common centre of rotation of grating (12) and speculum (5) to the plane at the reflecting surface place of speculum (5); The absolute value of u is the distance of the common centre of rotation of grating (12) and speculum (5) to plane, grating (12) Difraction surface place; θ representes that semiconductor laser tube (1) sends and be incident on incidence angle or first-order diffraction angle that the incident light on the grating (12) forms, and wherein u and w are not 0 simultaneously;
The sign convention of u does, if incide the incident light and the homonymy of common center of rotation at its datum plane of grating (12), then for just, otherwise for negative, wherein, the datum plane of u is the planar S G that grating (12) Difraction surface belongs to; The sign convention of w does, if incide the zero order diffracted light and the homonymy of common center of rotation at its datum plane of speculum (5), then for just, otherwise for negative, the datum plane of w is the planar S M that the reflecting surface of speculum (5) belongs to; The sign convention of angle β does, if being rotated counterclockwise speculum, angle β forms, and then for just, otherwise for bearing.
5. semiconductor laser according to claim 4 is characterized in that, said grating
(12) and speculum (5) to cross said common centre of rotation and perpendicular to the straight line of light path face
For axle rotates.
6. semiconductor laser according to claim 5 is characterized in that, in said semiconductor laser, is provided with the center of rotation governor motion, is used to regulate the position of said common centre of rotation;
Rotate governor motion, make said speculum (5) and grating (12) to cross said common centre of rotation and to serve as an axle rotation perpendicular to the straight line of light path face.
7. semiconductor laser according to claim 6 is characterized in that, said center of rotation governor motion is center of rotation micrometer adjusting screw (9), and said rotation governor motion is the tuning micrometer adjusting screw of laser frequency (8); And also include the moving plate (6) of adjusting bracket and the adjusting bracket that is fixed on the base plate (11) is decided plate (7); Said speculum (5) and grating (12) are fixed on the moving plate (6) of adjusting bracket, and tuning micrometer adjusting screw of laser frequency (8) and center of rotation micrometer adjusting screw (9) are arranged on said adjusting bracket to be decided on the plate (7);
Said common centre of rotation is arranged on the central axis of center of rotation micrometer adjusting screw (9), moves the position of adjustment common centre of rotation through regulating the moving plate (6) of center of rotation micrometer adjusting screw (9) drive adjusting bracket; Through regulating the moving plate (6) of the tuning micrometer adjusting screw of laser frequency (8) drive adjusting bracket speculum (5) and grating (12) on it are rotated.
8. semiconductor laser according to claim 7; It is characterized in that; Said rotation governor motion also comprises: adjusting bracket piezoelectric ceramic (10), be arranged between moving plate (6) of said adjusting bracket and the tuning micrometer adjusting screw of laser frequency (8), and be used for meticulous adjusting is done in the rotation of the moving plate (6) of adjusting bracket.
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| CN107991253A (en) * | 2017-11-28 | 2018-05-04 | 北京凯尔科技发展有限公司 | A kind of gas-detecting device |
| CN108493762B (en) * | 2018-01-26 | 2020-10-16 | 中国科学院上海光学精密机械研究所 | Semiconductor laser intensity noise suppression device and suppression method based on nonlinear effect |
| CN111244757B (en) * | 2020-01-19 | 2021-03-05 | 中国科学院半导体研究所 | Middle infrared wavelength full-coverage tunable optical module |
| CN113050403B (en) * | 2021-03-22 | 2022-06-14 | 湖北科技学院 | Low-microwave-power miniature CPT atomic clock light source generation device and method |
| CN113109030B (en) * | 2021-04-09 | 2023-08-22 | 苏州长光华芯光电技术股份有限公司 | Light path collimation debugging system and light path collimation debugging method |
| CN115603172B (en) * | 2022-11-18 | 2023-07-25 | 吉光半导体科技有限公司 | Fast tuning small Littman structure external cavity laser |
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| CN2687911Y (en) * | 2003-12-31 | 2005-03-23 | 南开大学 | Tunable grating external-cavity semiconductor laser |
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| CN2687911Y (en) * | 2003-12-31 | 2005-03-23 | 南开大学 | Tunable grating external-cavity semiconductor laser |
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| C. J. Hawthorn et al.Littrow configuration tunable external cavity diode laser with fixed direction output beam.《REVIEW OF SCIENTIFIC INSTRUMENTS》.2001,第72卷(第12期), * |
| F. Dybala et al.Tunable laser in 1575 nm–1225 nm range achieved by pressure tuning combined with grating tuning.《phys. stat. sol. (b)》.2006,第244卷(第1期),219–223. * |
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