CN101630718A - Resistive random access memory and manufacturing method thereof - Google Patents
Resistive random access memory and manufacturing method thereof Download PDFInfo
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- CN101630718A CN101630718A CN200910089611A CN200910089611A CN101630718A CN 101630718 A CN101630718 A CN 101630718A CN 200910089611 A CN200910089611 A CN 200910089611A CN 200910089611 A CN200910089611 A CN 200910089611A CN 101630718 A CN101630718 A CN 101630718A
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- parylene
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- 238000004519 manufacturing process Methods 0.000 title abstract description 5
- 229920000052 poly(p-xylylene) Polymers 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 23
- 229920000642 polymer Polymers 0.000 claims abstract description 14
- 238000002360 preparation method Methods 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 229920006254 polymer film Polymers 0.000 claims description 10
- 238000001259 photo etching Methods 0.000 claims description 6
- VRBFTYUMFJWSJY-UHFFFAOYSA-N 28804-46-8 Chemical group ClC1CC(C=C2)=CC=C2C(Cl)CC2=CC=C1C=C2 VRBFTYUMFJWSJY-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 238000001771 vacuum deposition Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 14
- 239000000463 material Substances 0.000 abstract description 10
- 238000000206 photolithography Methods 0.000 abstract description 7
- 239000002904 solvent Substances 0.000 abstract description 4
- 239000006227 byproduct Substances 0.000 abstract description 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 2
- 229920005597 polymer membrane Polymers 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 19
- 239000010410 layer Substances 0.000 description 7
- 238000003860 storage Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
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Abstract
The invention discloses a resistive random access memory (RAM) and a manufacturing method thereof, belonging to the technical field of integrated circuits. The resistive RAM is of MIM structure, wherein, the bottom layer and the top layer of the MIM structure are respectively provided with metal electrodes; the intermediate layer of the MIM structure is provided with a parylene polymer membrane. By adopting a parylene polymer as a resistive material of the resistive RAM, the invention can manufacture the resistive RAM with good resistive property and process compatibility. A preparation method of the parylene polymer adopts the chemical vapor deposition process at room temperature without by-products and solvent pollution, and is compatible with other modules of CMOS. Besides, the solution and solvents used in the parylene-resistant standard photolithography process can employ the CMOS standard photolithography process to manufacture the resistive RAM, thus increasing the memory density of the RAM.
Description
Technical field
The present invention relates to a kind of non-volatile (Nonvolatile memory) resistance-variable storing device (RRAM:Resistive RandomAccess Memory) and manufacture method thereof, belong to flexible electronic and learn polymer and CMOS hybrid-intergated-circuit technique field.
Background technology
Non-volatility memorizer in the market is mainly based on flash memory (Flash), constantly push ahead and electronic device continues microminiaturized demand along with the technology node of integrated circuit, research and develop the research focus that more high storage density, faster response speed, memory technology more low-cost and simple process have become the current information field.After flash memory technology can't continue reaching its physics limit to advance, be that the memory technology of new generation of representative has become the research focus that receives much attention with resistance-variable storing device (RRAM).
Resistance-variable storing device is a kind of brand-new electronic device, and it is can realize the reversible basis that is converted under the excitation of applied voltage or electric current with the resistance of material between high-impedance state and low resistance state.Compare with silica-based memory, resistance-variable storing device has following outstanding advantage on performance: its speed is fast; Operating voltage is low; Technology is simple.Based on organic material preparation organic resistive random access memory except that having These characteristics, also possess pliable and tough flexible advantage, in addition can also by the structure that designs molecule can be artificial the performance of its material of transformation and optimization.Organic resistive random access memory can be widely used in RF electronic tag, the e-book flexible electronic systems such as (e-paper).
The research of organic polymer resistance-variable storing device also is in the starting stage, the change of resistance takes place in a lot of organic materials under the excitation of voltage and current, comprise the composite material, single polymer of organic small molecule material and polymeric material and metal nanoparticle etc.As bibliographical information based on P6FBEu polymer resistance-variable storing device with based on the resistance-variable storing device of WPF-oxy-F polymer.At present, spin coating proceeding (spin-coating) and hard mask plate (hard mask) technology are generally adopted in the preparation of existing organic resistive random access memory, can not be compatible mutually with the CMOS standard photolithography process, the device cell size is generally in the square millimeter magnitude, limited its storage density, and spin coating proceeding exist easily residual contamination problem after the solvent evaporates and with the compatibling problem of other modules.
Summary of the invention
The present invention has overcome deficiency of the prior art, and a kind of resistance-variable storing device based on parylene polymer and preparation method thereof is provided.
Technical scheme of the present invention is:
A kind of resistance-variable storing device is mim structure, and the bottom and the top layer of this mim structure are respectively metal electrode, it is characterized in that, the intermediate layer of this mim structure is the parylene polymer film.
The thickness of described parylene polymer film is 50-150nm.
Described top layer electrode is Al, Cu, Ag or Ti, and thickness is between 200nm and 500nm.
Described bottom electrode is W or Pt, and thickness is between 100nm and 250nm.
Described parylene polymer is Parylene C type, described Parylene N type or described Parylene D type.
A kind of preparation method of resistance-variable storing device, its step comprises:
1) growth one insulating barrier on silicon substrate;
2) sputter one metal level is as bottom electrode;
3) deposit one parylene polymer film;
4) sputter one metal level, is peeled off definition top layer electrode at photoetching.
Described step 3) is specially: adopt Polymer CVD method deposit parylene polymer film, be vacuum deposition, deposition speed is between 1nm/min and 10nm/min.
After the described step 3), photoetching, RIE etching parylene polymer film define hearth electrode and draw through hole, draw bottom electrode by filling top layer electrode metal material.
Compared with prior art, the invention has the beneficial effects as follows:
The present invention adopts the resistive material of parylene polymer as resistance-variable storing device, can prepare the resistance-variable storing device of resistive characteristic and processing compatibility preferably.
The preparation method of Parylene of the present invention is the room temperature vapour phase chemical deposition technology of no byproduct and solvent-free pollution, with other module compatibilities of CMOS, and the solution and the solvent that use in the anti-standard photolithography process of Parylene, this organic resistive random access memory of CMOS standard photolithography techniques prepared can be used, the storage density of memory can be improved.
Description of drawings
Fig. 1 is the process chart of embodiment of the invention resistance-variable storing device;
Fig. 2 is the resistive characteristic test result of resistance-variable storing device of the present invention;
Wherein, the 1-device under the excitation of forward voltage by the transition process of high-impedance state to low resistance state; The 2-low resistance state keeps process; The 3-device under the excitation of reverse voltage by the transition process of low resistance state to high-impedance state; The 4-high-impedance state keeps process;
Fig. 3 is the memory property test result of resistance-variable storing device of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail:
The technology that the present invention prepares resistance-variable storing device as shown in Figure 1,
1) utilizes dried wet oxidation technology or the CVD technology SiO that on silicon substrate 1, grows
2Insulating barrier 2, thickness are between 20nm and 500nm, as Fig. 1 (a);
2) with the tungsten in the conventional cmos technology as bottom electrode 3, this bottom electrode adopts the film build method in physical vapor deposition (PVD) method or other IC technology to form, thickness and adopts standard photolithography techniques to make bottom electrode graphical between 200nm and 500nm, as Fig. 1 (b);
3) utilize Polymer CVD technology growth Parylene C type (Parylene-C) film 4, as Fig. 1 (c).Parylene Polymer CVD equipment is adopted in deposit, and technology is selected the canonical parameter of equipment for use, the about 50-150nm of film thickness, and deposition speed is between 1nm/min and 10nm/min;
4) by photoetching, RIE etching definition bottom electrode is drawn through hole 5, as Fig. 1 (d);
5) adopt PVD technology splash-proofing sputtering metal Al, thickness the photoetching by common process, is peeled off definition top layer electrode 6 between 100nm and 250nm, simultaneously hearth electrode is drawn.As Fig. 1 (e).
The present invention adopts the resistive material of Parylene material as resistance-variable storing device, it is advantageous that, free of contamination normal temperature deposition technology, with the compatibility of CMOS standard photolithography process, make bottom electrode and top electrode adopt material in the conventional cmos technology fully, realize three-dimensional integrated and high density storage so this polymer memory can be made many laminations memory at the cmos circuit top layer.
The test result of the resistive characteristic of the resistance-variable storing device that present embodiment makes as shown in Figures 2 and 3.
As shown in Figure 2, along with the voltage of top electrode changes (bottom electrode ground connection), in the resistance of the functional layer between two electrodes transformation between high resistant and the low-resistance, i.e. memory can take place " 0 ", " 1 " transformation between two states.
As shown in Figure 3, reading under the small voltage of 0.1V, the high-impedance state and the low resistance state of device remain unchanged; Device is placed (5x10 after a period of time in air
4S or 2x10
5S), high-impedance state and low resistance state remain unchanged substantially, have shown the storage retention performance that device is good.
Though this specification is described the material of resistance-variable storing device of the present invention in detail by specific embodiment, structure and preparation method thereof, but it should be appreciated by those skilled in the art, implementation of the present invention is not limited to the description scope of embodiment, in not breaking away from essence of the present invention and spiritual scope, can carry out various modifications and replacement to the present invention, for example Parylene C type (Parylene-C) can change Parylene N type (Parylene-N) or polydichloro-p-xylene D type (Parylene-D) into.In addition, lower electrode material also can change inert metal common in the MOS technology such as Pt into, and upper electrode material can change Cu or Ag or Ti into.
More than by specific embodiment resistance-variable storing device provided by the present invention has been described, it will be understood by those of skill in the art that in the scope that does not break away from essence of the present invention, can make certain deformation or modification to the present invention; Its preparation method also is not limited to disclosed content among the embodiment.
Claims (10)
1, a kind of resistance-variable storing device is mim structure, and the bottom and the top layer of this mim structure are respectively metal electrode, it is characterized in that, the intermediate layer of this mim structure is the parylene polymer film.
2, resistance-variable storing device as claimed in claim 1 is characterized in that, the thickness of described parylene polymer film is 50-150nm.
3, resistance-variable storing device as claimed in claim 1 or 2 is characterized in that, described top layer electrode is Al, Cu, Ag or Ti.
4, resistance-variable storing device as claimed in claim 3 is characterized in that, described bottom electrode is W or Pt.
5, resistance-variable storing device as claimed in claim 3 is characterized in that, the thickness of described top layer electrode is between 200nm and 500nm.
6, resistance-variable storing device as claimed in claim 4 is characterized in that, the thickness of described hearth electrode is between 100nm and 250nm.
7, resistance-variable storing device as claimed in claim 1 or 2 is characterized in that, described parylene polymer is Parylene C type, Parylene N type or Parylene D type.
8, a kind of preparation method of resistance-variable storing device, its step comprises:
1) growth one insulating barrier on silicon substrate;
2) sputter one metal level is as bottom electrode;
3) deposit one parylene polymer film;
4) sputter one metal level, is peeled off definition top layer electrode at photoetching.
9, method as claimed in claim 8 is characterized in that, described step 3) is specially: adopt Parylene PolymerCVD method deposit parylene polymer film, be vacuum deposition, deposition speed is between 1nm/min and 10nm/min.
10, method as claimed in claim 8 or 9 is characterized in that after the described step 3), photoetching, RIE etching parylene polymer film define hearth electrode and draw through hole, draws bottom electrode by filling top layer electrode metal material.
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| CN101630718B CN101630718B (en) | 2012-01-18 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101826597A (en) * | 2010-05-04 | 2010-09-08 | 北京大学 | Organic resistive random access memory and preparation method thereof |
| CN101944569A (en) * | 2010-08-06 | 2011-01-12 | 北京大学 | Method for making non-volatile memory by using MIM capacitor structure |
| CN102222512A (en) * | 2010-04-13 | 2011-10-19 | 北京大学 | Flexible organic resistive random access memory and manufacturing method thereof |
| CN102412368A (en) * | 2011-09-29 | 2012-04-11 | 福州大学 | Resistive random access memory based on polymer/metal ion composite system, and preparation method for resistive random access memory |
| CN102593353A (en) * | 2012-02-27 | 2012-07-18 | 上海集成电路研发中心有限公司 | Resistive random access memory and manufacturing method thereof |
| CN102610755A (en) * | 2012-03-26 | 2012-07-25 | 北京大学 | Ultra-low-power organic resistance changing memory device and manufacturing method thereof |
| CN102881822A (en) * | 2011-07-13 | 2013-01-16 | 北京大学 | Transparent flexible resistance random access memory and manufacturing method therefor |
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| CN103887431B (en) * | 2014-02-11 | 2017-01-04 | 北京大学 | A kind of many-valued non-volatile organic resistive random access memory and preparation method |
-
2009
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102222512A (en) * | 2010-04-13 | 2011-10-19 | 北京大学 | Flexible organic resistive random access memory and manufacturing method thereof |
| CN102222512B (en) * | 2010-04-13 | 2014-01-08 | 北京大学 | Flexible organic resistive random access memory and manufacturing method thereof |
| CN101826597B (en) * | 2010-05-04 | 2012-08-29 | 北京大学 | Organic resistive random access memory and preparation method thereof |
| CN101826597A (en) * | 2010-05-04 | 2010-09-08 | 北京大学 | Organic resistive random access memory and preparation method thereof |
| CN101944569A (en) * | 2010-08-06 | 2011-01-12 | 北京大学 | Method for making non-volatile memory by using MIM capacitor structure |
| CN102881822A (en) * | 2011-07-13 | 2013-01-16 | 北京大学 | Transparent flexible resistance random access memory and manufacturing method therefor |
| WO2013007113A1 (en) * | 2011-07-13 | 2013-01-17 | 北京大学 | Transparent and flexible organic resistive random access memory and method for manufacturing same |
| US20140145139A1 (en) * | 2011-07-13 | 2014-05-29 | Ru Huang | Transparent flexible resistive memory and fabrication method thereof |
| CN102412368A (en) * | 2011-09-29 | 2012-04-11 | 福州大学 | Resistive random access memory based on polymer/metal ion composite system, and preparation method for resistive random access memory |
| CN102412368B (en) * | 2011-09-29 | 2014-03-12 | 福州大学 | Resistive random access memory based on polymer/metal ion composite system, and preparation method for resistive random access memory |
| CN102593353A (en) * | 2012-02-27 | 2012-07-18 | 上海集成电路研发中心有限公司 | Resistive random access memory and manufacturing method thereof |
| CN102593353B (en) * | 2012-02-27 | 2017-08-22 | 上海集成电路研发中心有限公司 | A kind of resistance-variable storing device and its manufacture method |
| CN102610755A (en) * | 2012-03-26 | 2012-07-25 | 北京大学 | Ultra-low-power organic resistance changing memory device and manufacturing method thereof |
| CN102610755B (en) * | 2012-03-26 | 2014-03-26 | 北京大学 | Ultra-low-power organic resistance changing memory device and manufacturing method thereof |
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| CN101630718B (en) | 2012-01-18 |
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