CN101626157B - Overvoltage protection device for an electrical circuit - Google Patents
Overvoltage protection device for an electrical circuit Download PDFInfo
- Publication number
- CN101626157B CN101626157B CN200910163968.5A CN200910163968A CN101626157B CN 101626157 B CN101626157 B CN 101626157B CN 200910163968 A CN200910163968 A CN 200910163968A CN 101626157 B CN101626157 B CN 101626157B
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- CN
- China
- Prior art keywords
- transistor
- overvoltage protection
- semiconductor
- input
- output
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
- H02H9/025—Current limitation using field effect transistors
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/042—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage comprising means to limit the absorbed power or indicate damaged over-voltage protection device
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/05—Capacitor coupled rectifiers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Emergency Protection Circuit Devices (AREA)
Abstract
The invention relates to an overvoltage protection device (2), comprising an input (20) intended to be connected to a power supply mains (A), and an output (21) intended to be connected to an electronic system (3) to be protected, the device comprising: two bidirectional field-effect semiconductor transistors (T1, T2) of normally-on type, connected in series between the input (20) and the output (21), these being fabricated in a wide-bandgap material and able to operate in current-limiting mode; and a resistor (R1) connected in parallel with the two transistors (T1, T2).
Description
Technical field
The present invention relates to a kind of device of protecting the overvoltage infringement that electronic installation avoids occurring in supply main.
Background technology
Document WO 2006/129005 has disclosed a kind of superpotential protective device that supply main produces of resisting.This device comprises, especially, two field-effect transistors that are connected in series (FET) can play metering function in the time that electric current exceedes their current limit.But in the time producing overvoltage due to the switching of inductive or capacity load in supply main, all may there is huge change in voltage in each handover operation.Since the output voltage of this device is determined by the method for limiting in parallel of transil diode type in prior art, all remaining overvoltage will be applied to junction field effect transistor (JFET).The inductive current producing during switching overvoltage may be high more a lot of than the current limit of JFET.In the case, increase very soon through the voltage of system terminal, the Limited Current a no longer thus until transistor reaches avalanche mode.The energy dissipating in transistor is so sizable, and may cause the damage of element.
Summary of the invention
The object of this invention is to provide a kind of protective device of electronic system; can effectively resist the dissimilar overvoltage occurring in supply main; no matter and it is by the thunderbolt on backbone or load handover operation and produce, and allow to reach little energy dissipation during nondestructive energy dissipation during overvoltage and nominal operation.
Above-mentioned target is realized by a kind of overvoltage protection, and it comprises that one is intended to be connected to the input of electrical mains, and an output that is intended to be connected to protected electronic system, it is characterized in that comprising:
-two normal connection type bidirectional field-effect semiconductor transistors are connected in series between input and output, manufactured, and can under current-limit mode, move by wide bandgap material; With
-mono-resistor, is connected in parallel with described two transistors.
Device of the present invention is specially adapted to protect any electronic system that is connected to distributiong main.
Device of the present invention is specially adapted to provide effective protection for capacitive power supply system.This be because, the device of this particular type draws little electric weight from supply main, the present invention not only makes overvoltage protection minimize becomes possibility, and makes to improve considerably energy efficiency and reduce thus heat dissipation and become possibility.
According to a feature, two semiconductor transistors of described device are JFET transistors.
According to another feature; the back-to-back connection of semiconductor transistor of described device; thus; the drain electrode of the first semiconductor transistor is connected to supply main; the drain electrode of the second semiconductor transistor is connected to protected electronic system; be positioned at downstream, the source electrode of described semiconductor transistor links together, and the grid of described two semiconductor transistors also links together and each is around the public potential end taking back to source electrode.
According to another feature, two semiconductor transistors of described device are manufactured by carborundum or gallium nitride.
According to another feature, described device comprises two-way transil diode or a rheostat, is connected to the downstream of described two semiconductor transistors with output-parallel.
The invention still further relates to a kind of protected electronic system, have the plus end and the negative terminal that are intended to be connected to electrical mains, this system comprises that protective device as described below is as input, and described device series connection is connected to its plus end or its negative terminal.
According to a feature, described system is made up of a power-supply system, and this system comprises a rectifier module, for produce direct voltage on DC bus, and a bus capacitor, be connected between the main track and negative wire of DC bus.
According to another feature, described power-supply system comprises an input capacitor, is connected in series the downstream of protective device between plus end or negative terminal.
Brief description of the drawings
Other feature and advantage are in detailed description subsequently, with reference to the embodiment providing via example and described to represent by the accompanying drawing adding:
-Fig. 1 illustrates a protective device of the present invention, is suitable for any electronic system that is connected to distributiong main; With
-Fig. 2 illustrates a protective device of the present invention, is suitable for a capacitive power supply system.
Embodiment
At the remainder of setting forth, can recognize that described protective device 2 is suitable for protecting the electronic system 3 of any type being connected with AC power main line A, thereby can stand the dissimilar interference from this main line A.For example, described protected electronic system 3 can be capacitive power-supply system 30.
Protective device of the present invention 2 shown in Fig. 1 comprises that one is intended to be connected to the plus end of electrical mains A or the input of negative terminal 20, and an output 21 that is intended to be connected to protected electronic system 3.Between input 20 and output 21, protective device 2 comprises two, for example identical bidirectional field-effect semiconductor transistor T1 and T2.Described two semiconductor transistor T1, T2 are connected in series and couple together as flow restricter.These semiconductor transistors T1, T2 are manufactured by wide bandgap material, such as carborundum (SiC) or gallium nitride (GaN), therefore can offer their low on-state resistance device R
dS, on, and can withstand high pressure (approximately 1000V).
Preferably JFET transistor of these field-effect semiconductor transistor Ts 1, T2.JFET transistor is known semiconductor element, comprises a control grid (G), and its function is to allow or prevention electric current flowing between drain electrode (D) and source electrode (S).As the control voltage V lacking between grid and source electrode
gStime, if drain electrode-source path is conducting, this transistor is called as normal connection type.Contrary, as the voltage V lacking between grid and source electrode
gStime, if drain electrode-source path is non-conduction, this transistor is called as normal off open form.In the present invention, described semiconductor transistor T1, T2 (being after this called transistor) belong to normal connection type.
As shown in Figure 1, transistor T 1, T2 connect as flow restricter, and are connected in series with protected electronic system 3, are positioned at downstream.Their back-to-back connections; by this way; the drain electrode (D) of transistor T 1 is connected to supply main A; the drain electrode (D) of transistor T 2 is connected to protected electronic system 3; be positioned at downstream; the source electrode (S) of transistor T 1, T2 links together, and two transistorized grids (G) also link together and each is around taking back to the public potential end of source electrode (S).
According to the present invention; the electronic system 3 that is positioned at downstream for protection is avoided the overvoltage producing because of thunderbolt in supply main; protective device 2 of the present invention comprises amplitude limiter (clipper) or a two-way transil diode D1 of a variable resistance type, the downstream that is connected in transistor T 2 in parallel with output 21.The combination of two transistor Ts 1, T2 and the amplitude limiter that formed by diode D1 as shown in fig. 1, makes the circuit 3 that is positioned at downstream not be subject to the superpotential infringement of high-energy, and can not make the volume of device excessive.The object of transil diode D1 is the voltage max of fixture output, and the preferred path of electric current is provided during overvoltage.Conceivable, if bus capacitor Cb has such capacitance, make to be no more than and to be connected to the maximum voltage that the electronic system 3 in downstream allows at the voltage increment producing between its terminal during overvoltage, can omit this transil diode D1.
Than traditional device, by its principle, the operation of JFET transistor under current-limit mode significantly reduced the electric current being caused by overvoltage, and reduces thus the energy that protective device absorbs.By means of superpotential amplitude, the dump energy that will dissipate is distributed between transistor T 1 that transil diode D1 and two series winding connects, T2.Until overvoltage is while reaching the off voltage that approaches transil diode D1, most energy dissipate in this tranil.When higher for overvoltage, transistor T 1 and T2 take over the extra energy that dissipates.
The current limit of each transistor T 1, T2 is selected by the following method, can be the enough starting currents of load transmission of electronic system 3.For optimizing lightning protection overvoltage protection, reduce current limit to the required minimum value of the normal operation of load, make to be reduced in the energy dissipating in superpotential situation, and though this dissipation be in each transistor T 1, T2 or transil diode D1 in.But in the time that overvoltage is caused by the inductive on supply main A or capacity load switching, each handover operation all can produce huge change in voltage.Since the output voltage of device of the present invention is definite by transil diode D1, all remaining overvoltage all put on transistor T 1, T2.Switch the inductive current that produces during overvoltage may be far away higher than the current limit of transistor T 1, T2.In the case, the voltage of device between 2 terminals sharply increases until transistor T 1, T2 arrive avalanche mode thus no longer current limliting.Therefore the energy equivalence dissipating in transistor is large, and may cause the damage of its element.
Switch superpotential problem for solving, it is possible that transistor T 1, T2 are designed to bear ceiling capacity.But this solution is quite expensive.Can selectively, can be applicable to two JFET transistor placements one in parallel the resistor R1 of specification, all energy that can dissipate therein thus and cause by switching overvoltage.In this selection, each transistor T 1, T2 can keep appropriate size and reasonable price thus.Therefore the specification of the resistor R1, being connected in parallel must be chosen to be at below the maximum voltage that can deboost can bear to transistor T 1, T2.
It should be noted that the transistorized current limliting feature of JFET depends on temperature.During overvoltage, voltage increases, and first in transil diode D1, observes dissipation, is then in transistor T 1, T2, and this causes transistor to be progressively heated, and has therefore reduced current limliting level.In the time there is lightning strike induction voltage, thermal effect is welcome, because it may limit the energy that will dissipate, since the current limited of JFET and transil diode itself.On the contrary, in the time occurring switching overvoltage and induced current, the electric current JFET that no longer flows through, causes voltage to rise to rapidly the snowslide threshold value of JFET, on this threshold value, and the electric current JFET transistor of can flowing through unrestrictedly.According to the present invention, resistor R1 is connected in parallel to JFET, is met thus once formula below, just sets up a faradic path:
U
max＝(I
max-I
lim?JFET)R1
Thus, by the maximum of Imax (inductive current), can limit a resistor R1 and make U
maxbe less than U
brJFET, to avoid JFET to enter avalanche mode.The moisture sensitivity of JFET can promote to be passed to the energy dissipation of resistor R1 thus, therefore improves the robustness of device.
Design example:
Inductive load I on 300VA main line
max=1.8A;
The transistorized current limliting I of JFET
lim JFET=0.1A;
The transistorized maximum withstand voltage U of JFET
brJFET=2000V;
Set-point R1=U
brJFET/ (I
max-I
limJFET)=1176ohms.
With reference to Fig. 2, protected electronic system 3, such as an electric power system 30, its object is for providing an electrical load C.Such power-supply system 30 comprises and two input terminal-mono-plus ends and a negative terminal-set it to be connected to the supply main A that adopts alternating voltage is for example equivalent to 230VAC or 400VAC, results from the frequency such as 50Hz.This system also comprises, as input, a rectifier module 33, for example, be made up of diode bridge, and its alternating voltage from supply main A on DC bus produces direct voltage; One bus capacitor Cb, is connected between the main track 31 and negative wire 32 of bus the downstream of rectifier module 33; One input capacitor C1, its one end is connected to plus end, and the other end is connected to a branch of diode bridge.System 30 also can comprise the device of restriction from the next voltage of power-supply system transmission, comprises a for example Zener diode Dz, is connected between the main track 31 and negative wire 32 of bus the downstream of bus capacitor Cb.
In Fig. 2, protective device 2 of the present invention is arranged on the upstream of aforesaid capacitive power supply system thus.The dissimilar overvoltage that described device 2 may stand for electric power system provides protection, and particularly the overvoltage causing is switched in the upper load occurring of lightning strike induction voltage or electrical mains A.This device also has advantages of the overcurrent that protection power source system 30 is avoided occurring in the time applying voltage by restriction starting current.Situation is such, and in the time of startup power supply system, the violent change in voltage that input capacitor C1 experiences causes a large electric current to pour in by two transistor Ts 1, T2.In the time that electric current increases and exceedes the current limit of transistor T 1, transistor T 1 is switched to its unrestricted model, causes its internal resistance to increase.Along with transistor resistance increases, the voltage between its terminal also increases.Same situation also occurs on transistor T 2.Thus, the large change in voltage occurring in the time of starting is absorbed by transistor.In service in normality, the on-state resistance of two transistor Ts 1, T2 is very low, therefore only produces little dissipation loss.
Certainly be conceivable not departing from other different embodiment and detailed improvement in scope of the present invention, and the application that is equal to means it is contemplated that.
Claims (6)
1. an overvoltage protection, comprising:
One is configured to the input of the first end that is connected to electrical mains;
One is configured to be connected to the output of protected electronic system;
The two-way JFET field-effect semiconductor transistor of-Chang connection type first and second is connected in series between input and output, and they are manufactured by wide bandgap material, and are configured to move under current-limit mode;
-mono-resistor, is connected in parallel with described two transistors,
Wherein said resistor has and at least equals U
brJFET/ (I
max-I
limJFET) resistance value,
U
brJFETthe transistorized maximum withstand voltage of JFET field-effect semiconductor,
I
maxthe maximum of the inductive current in overvoltage protection, and
I
limJFETit is the transistorized current limliting of JFET field-effect semiconductor;
And further comprise two-way transil diode or a rheostat, be connected to the downstream of the first and second semiconductor transistors at first end and output-parallel, and be directly connected to the second end of electrical mains at the second end relative with first end,
And described resistor is connected between the drain electrode and two-way transil diode or rheostat of the first semiconductor transistor.
2. device as claimed in claim 1, the back-to-back connection of wherein said semiconductor transistor, by this way, the drain electrode of the first semiconductor transistor is connected to described input, the drain electrode of the second semiconductor transistor is connected to described output, the source electrode of described semiconductor transistor links together, and the grid of described the first and second semiconductor transistors also links together and each is around the public potential end taking back to source electrode.
3. device as claimed in claim 1, wherein said the first and second semiconductor transistors are manufactured by carborundum or gallium nitride.
4. a protected electronic system, comprising:
Be configured to be connected to plus end and the negative terminal of electrical mains;
Overvoltage protection as claimed in claim 1, described device series connection is connected to described plus end or described negative terminal.
5. system as claimed in claim 4; further comprise the power-supply system that is connected to overvoltage protection, it comprises a rectifier module, for produce direct voltage on DC bus; with a bus capacitor, be connected between the main track and negative wire of DC bus.
6. system as claimed in claim 4, wherein power-supply system comprises an input capacitor, is connected in series the downstream of overvoltage protection between overvoltage protection and plus end or negative terminal.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0853252 | 2008-05-20 | ||
| FR0853252A FR2931594B1 (en) | 2008-05-20 | 2008-05-20 | DEVICE FOR PROTECTING AN ELECTRIC CIRCUIT AGAINST OVERVOLTAGES |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101626157A CN101626157A (en) | 2010-01-13 |
| CN101626157B true CN101626157B (en) | 2014-07-30 |
Family
ID=40030238
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910163968.5A Active CN101626157B (en) | 2008-05-20 | 2009-05-20 | Overvoltage protection device for an electrical circuit |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8164874B2 (en) |
| EP (1) | EP2124310B1 (en) |
| CN (1) | CN101626157B (en) |
| FR (1) | FR2931594B1 (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5170075B2 (en) * | 2009-12-28 | 2013-03-27 | サンケン電気株式会社 | Current type inverter device |
| US8693276B2 (en) * | 2011-12-28 | 2014-04-08 | Monolithic Power Systems, Inc. | Power supply, associated management unit and method |
| US8835976B2 (en) | 2012-03-14 | 2014-09-16 | General Electric Company | Method and system for ultra miniaturized packages for transient voltage suppressors |
| US9042072B2 (en) | 2012-03-30 | 2015-05-26 | General Electric Company | Method and system for lightning protection with distributed transient voltage suppression |
| FR2991779B1 (en) * | 2012-06-12 | 2014-07-11 | Commissariat Energie Atomique | BATTERY OF ACCUMULATORS PROTECTED AGAINST SHORT CIRCUITS EXTERNAL |
| US8987858B2 (en) | 2013-03-18 | 2015-03-24 | General Electric Company | Method and system for transient voltage suppression |
| DE102013107699A1 (en) * | 2013-07-18 | 2015-01-22 | Springburo GmbH | voltage limiter |
| FR3016751B1 (en) * | 2014-01-21 | 2017-10-06 | Mersen France Sb Sas | DEVICE FOR PROTECTING A CIRCUIT AGAINST OVERVOLTAGES AND ELECTRIC POWER SUPPLY COMPRISING SUCH A DEVICE |
| US10103540B2 (en) | 2014-04-24 | 2018-10-16 | General Electric Company | Method and system for transient voltage suppression devices with active control |
| US9806157B2 (en) | 2014-10-03 | 2017-10-31 | General Electric Company | Structure and method for transient voltage suppression devices with a two-region base |
| FR3095908B1 (en) * | 2019-05-10 | 2021-04-16 | Commissariat Energie Atomique | Capacitive power supply circuit |
| EP3855624A1 (en) * | 2020-01-22 | 2021-07-28 | Infineon Technologies AG | Overvoltage protection circuit and device |
| DE102020127777A1 (en) * | 2020-10-22 | 2022-04-28 | Phoenix Contact Gmbh & Co. Kg | Device for communication between a controller and a field device |
| TWI771126B (en) * | 2021-04-20 | 2022-07-11 | 立錡科技股份有限公司 | Spike suppression circuit, power converter, and control method thereof |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2394094Y (en) * | 1999-11-08 | 2000-08-30 | 俞志龙 | Height adjustable mark bulb |
| US6529355B1 (en) * | 2000-06-27 | 2003-03-04 | National Instruments Corporation | Input protection circuit implementing a voltage limiter |
| JP3600802B2 (en) * | 2001-04-26 | 2004-12-15 | 関西電力株式会社 | Current limiting device |
| WO2004027800A2 (en) * | 2002-09-19 | 2004-04-01 | Symbol Technologies, Inc. | Current limiting circuit |
| FR2886778B1 (en) * | 2005-06-03 | 2007-09-07 | Schneider Electric Ind Sas | OVERVOLTAGE PROTECTION DEVICE AND ELECTRONIC CIRCUIT COMPRISING SUCH A DEVICE |
| US7576962B2 (en) * | 2005-06-16 | 2009-08-18 | Bourns, Inc. | Transient blocking apparatus with reset |
| JP2009201096A (en) * | 2008-01-22 | 2009-09-03 | Nec Electronics Corp | Switch circuit |
-
2008
- 2008-05-20 FR FR0853252A patent/FR2931594B1/en not_active Expired - Fee Related
-
2009
- 2009-05-14 EP EP09160299.5A patent/EP2124310B1/en active Active
- 2009-05-19 US US12/468,534 patent/US8164874B2/en active Active
- 2009-05-20 CN CN200910163968.5A patent/CN101626157B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| FR2931594B1 (en) | 2010-08-13 |
| US8164874B2 (en) | 2012-04-24 |
| EP2124310B1 (en) | 2017-09-13 |
| EP2124310A1 (en) | 2009-11-25 |
| US20090290276A1 (en) | 2009-11-26 |
| CN101626157A (en) | 2010-01-13 |
| FR2931594A1 (en) | 2009-11-27 |
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