CN101625084A - Light emitting device and method for producing the light emitting device - Google Patents
Light emitting device and method for producing the light emitting device Download PDFInfo
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- CN101625084A CN101625084A CN200910158740A CN200910158740A CN101625084A CN 101625084 A CN101625084 A CN 101625084A CN 200910158740 A CN200910158740 A CN 200910158740A CN 200910158740 A CN200910158740 A CN 200910158740A CN 101625084 A CN101625084 A CN 101625084A
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- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 27
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
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- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
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Images
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V3/00—Globes; Bowls; Cover glasses
- F21V3/04—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings
- F21V3/049—Patterns or structured surfaces for diffusing light, e.g. frosted surfaces
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V3/00—Globes; Bowls; Cover glasses
- F21V3/04—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings
- F21V3/06—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by the material
- F21V3/08—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by the material the material comprising photoluminescent substances
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2113/00—Combination of light sources
- F21Y2113/10—Combination of light sources of different colours
- F21Y2113/13—Combination of light sources of different colours comprising an assembly of point-like light sources
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2113/00—Combination of light sources
- F21Y2113/30—Combination of light sources of visible and non-visible spectrum
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
Abstract
The invention provides a light emitting device that does not reduce radiant efficiency when in use, enables to increase luminous flux by flowing a high electric current to LED elements, and produces white light of good color rendition. The invention also provides a light emitting device capable of smoothly transmitting heat generated by an LED element to a substrate. The light emitting device is provided with first LED elements for emitting UV radiation, second LED elements for emitting visible light, an SiC fluorescent substrate that is mounted with the first LED elements and the second LED elements and is made of SiC doped with at least one of B and Al as well as N and emits visible light when excited by radiation emitted from the first LED elements, and has a body made of inorganic material.
Description
Technical field
The light-emitting device that the present invention relates to possess the LED element and send white light.
Background technology
In the past, white color light emitting device (for example with reference to patent documentation 1) was sent in known a kind of combination by LED element and fluorophor.The light-emitting device of patent documentation 1 record has the LED element of the light that sends 300～470nm, by the fluorophor by this light stimulus, is transformed to the longer light of wavelength partially or completely, thereby generates white light.Wherein, fluorophor is scattered in the sealing resin of sealing LED element.
In addition, also known a kind of light-emitting device can generate white light (for example, with reference to patent documentation 2) by the combination of red LED element, green LED element and blue-led element.
Patent documentation 1: Japanese Unexamined Patent Application Publication 2003-535478 communique
Patent documentation 2: TOHKEMY 2008-085324 communique
But in the light-emitting device of patent documentation 1 record, the hear resistance of the fluorophor in the sealing resin is low, rises if install the temperature of light-emitting device when using, and then luminous efficiency reduces.In addition, the caloric value of LED element is restricted, and increases light quantity so be difficult to make big electric current to flow through the LED element.
At this, can consider not use fluorophor, and obtain white light by red, green and each blue LED element as the light-emitting device of patent documentation 2 records.But the half range value of each LED element is compared minimum with fluorophor, the color reprodubility step-down of resulting white light.
And then, under the unrestricted situation of the caloric value of LED element, produce the needs that the heat that each LED element is produced is passed to the substrate that has carried each LED element reposefully.
Summary of the invention
The present invention finishes in view of above situation, and its purpose is: a kind of light-emitting device is provided, and luminous efficiency did not reduce when device was used, and made big current direction LED element increase light quantity, and, can access the good white light of color reprodubility.
In addition, other purposes are: a kind of light-emitting device and manufacture method thereof are provided, and the heat that the LED element can be produced is reposefully to the substrate transmission.
In order to address the above problem, first light-emitting device of the present invention is characterised in that to possess: a LED element, send ultraviolet light; The 2nd LED element sends visible light; Substrate has carried an above-mentioned LED element and above-mentioned the 2nd LED element, comprises inorganic material; Housing holds an above-mentioned LED element, above-mentioned the 2nd LED element and aforesaid substrate, comprises inorganic material; And the SiC fluorescent plate, be doped with at least a and N of B and Al, during the light stimulus of being sent, send visible light from an above-mentioned LED element.
In above-mentioned first light-emitting device, it is characterized in that it is the following light of 408nm that an above-mentioned LED element sends peak wavelength, above-mentioned the 2nd LED element sends the light that peak wavelength surpasses 408nm.
In above-mentioned first light-emitting device, it is characterized in that above-mentioned housing has opening, above-mentioned SiC fluorescent plate is arranged at above-mentioned opening.
In above-mentioned first light-emitting device, it is characterized in that above-mentioned SiC fluorescent plate has the periodical configuration that forms with the cycle littler than the emission wavelength of an above-mentioned LED element on the face of the light institute incident of sending from an above-mentioned LED element.
In above-mentioned first light-emitting device, it is characterized in that possessing: lens, be arranged at the outside of the above-mentioned SiC fluorescent plate of above-mentioned opening, comprise inorganic material.
In order to address the above problem, second light-emitting device of the present invention is characterised in that to possess: the ultraviolet LED element, send ultraviolet light; Blue-led element sends blue light; The green LED element sends green light; The red LED element sends red light; Substrate has carried above-mentioned ultraviolet LED element, above-mentioned blue-led element, above-mentioned green LED element and above-mentioned red LED element, comprises inorganic material; Housing holds above-mentioned ultraviolet LED element, above-mentioned blue-led element, above-mentioned green LED element, above-mentioned red LED element and aforesaid substrate, comprises inorganic material; And the SiC fluorescent plate, be doped with at least a and N of B and Al, during the light stimulus of being sent, send visible light from above-mentioned ultraviolet LED element.
In order to address the above problem, the 3rd light-emitting device of the present invention is characterised in that to possess: a LED element, send ultraviolet light; The 2nd LED element sends visible light; The SiC fluorescent plate is doped with at least a and N of B and Al, during the light stimulus of being sent from an above-mentioned LED element, sends visible light; Substrate has carried an above-mentioned LED element and above-mentioned the 2nd LED element, comprises inorganic material; And AuSn class alloy-layer, aforesaid substrate is engaged with an above-mentioned LED element and above-mentioned the 2nd LED element, have the column crystallization that extends to the approximate vertical direction with respect to aforesaid substrate.
In above-mentioned the 3rd light-emitting device, it is characterized in that possessing: housing, hold aforesaid substrate, comprise inorganic material.
In above-mentioned the 3rd light-emitting device, it is characterized in that the peak wavelength of an above-mentioned LED element is below the 408nm, the peak wavelength of above-mentioned the 2nd LED element surpasses 408nm.
In above-mentioned the 3rd light-emitting device, it is characterized in that above-mentioned the 2nd LED element is these 3 kinds of LED elements of blue-led element, green LED element and red LED element.
The method of making above-mentioned the 3rd light-emitting device is characterised in that, comprising: the Sn film forms operation, at the lift-launch face of aforesaid substrate, forms the Sn film; The Au film forms operation, at the non-lift-launch face of an above-mentioned LED element and above-mentioned the 2nd LED element, forms the Au film; The contact operation makes the above-mentioned Au film that is formed at an above-mentioned LED element and above-mentioned the 2nd LED element contact with the surface of the above-mentioned Sn film of the above-mentioned lift-launch face that is formed at aforesaid substrate; And joint operation, make under above-mentioned Sn film and the above-mentioned Au film state of contact, in the atmosphere of composition (forming) gas of the mixed gas that comprises hydrogen and nitrogen, heat aforesaid substrate, an above-mentioned LED element and above-mentioned the 2nd LED element are engaged to aforesaid substrate.
In the method for making above-mentioned the 3rd light-emitting device, it is characterized in that, particularly, in above-mentioned contact operation, making the above-mentioned lift-launch face of aforesaid substrate is the top, making the non-lift-launch face of an above-mentioned LED element and above-mentioned the 2nd LED element is the below, an above-mentioned LED element and above-mentioned the 2nd LED element is put in aforesaid substrate, thereby above-mentioned Sn film is contacted with above-mentioned Au film; In above-mentioned joint operation, put under the state of aforesaid substrate at an above-mentioned LED element and above-mentioned the 2nd LED element, the heating aforesaid substrate is engaged to aforesaid substrate with an above-mentioned LED element and above-mentioned the 2nd LED element.
According to the present invention, the SiC fluorescent plate has high-fire resistance, so luminous efficiency reduction unlike in the past when device uses improves owing to install the hear resistance of self, so can make big current direction LED element increase light quantity.And then the SiC fluorescent plate also when the light stimulus of being sent from a LED element, sends with LED element etc. and compares the bigger light of half range value, so can access the good white light of color reprodubility.
And then substrate and each LED element engage by the AuSn class alloy-layer with column crystallization, so the heat that each LED element can be produced is reposefully to the substrate transmission.
Description of drawings
Fig. 1 is the stereoscopic figure that the light-emitting device of embodiment is shown of the present invention.
Fig. 2 is the summary profilograph of light-emitting device.
Fig. 3 is the enlarged drawing of SiC fluorescent plate, (a) is the part profilograph, (b) is the part vertical view.
Fig. 4 is the diagrammatic top view of mounted board.
Fig. 5 is with the key diagram of LED element mounting in mounted board, (a) is the vertical view that carries the preceding mounted board of LED element, (b) is the side view of the mounted board when carrying the LED element, (c) is the side view of the mounted board behind the lift-launch LED element.
Fig. 6 is the summary profilograph that the light-emitting device of variation is shown.
Fig. 7 is the outside drawing of the front portion of automobile.
Fig. 8 is the summary profilograph that the light-emitting device of variation is shown.
Fig. 9 is the in-built key diagram of headlight (head light) that variation is shown.
Figure 10 is the key diagram that the LED element is carried to mounted board, (a) is the vertical view that carries the preceding mounted board of LED element, (b) is the side view of the mounted board when carrying the LED element, (c) is the side view of the mounted board behind the lift-launch LED element.
Symbol description
1 light-emitting device
2 housings
The 2a opening
The 2b bottom
The 2c flange
The 3SiC substrate
The 3a protuberance
4 portion of terminal
The 4a cylindrical portion
The 4b rake
4c first electrode
The 4d insulation division
4e second electrode
5 screws
6 inner leads
7 lens
8 radiators
9 speculums
10 mounted boards
The 10a wiring pattern
10b Sn film
10c AuSn class alloy-layer
11 ultraviolet LED elements
12 blue-led elements
13 green LED elements
14 red LED elements
101 light-emitting devices
200 vehicles
The 200a headlight
201 light-emitting devices
220 lens
The specific embodiment
Fig. 1 is the stereoscopic figure that the light-emitting device of an embodiment is shown of the present invention.
As shown in Figure 1, light-emitting device 1 has: columnar housing 2 at one end is formed with opening 2a; SiC fluorescent plate 3, inaccessible this opening 2a; And portion of terminal 4, be formed at the other end of housing 2.In the present embodiment, with housing 2 one distolateral as last direction and with another distolateral as under direction describe.At housing 2, held the multiple LED element that is powered from portion of terminal 4, by the ultraviolet light that sends from the LED element, SiC fluorescent plate 32 is energized and is luminous.Wherein, the blue light that sends from the LED element, green light and red light come to see through SiC fluorescent plate 3 not carrying out wavelength conversion.
Fig. 2 is the summary profilograph of light-emitting device.
As shown in Figure 2, housing 2 comprises inorganic material, and the lower end is by obturation, and this occlusive part is divided into bottom 2b.Housing 2 comprises pottery, is AlN in the present embodiment.At bottom 2b, be fixed with the mounted board 10 that has carried ultraviolet LED element 11, blue-led element 12, green LED element 13 and red LED element 14.The fixing means of mounted board 10 is any, but in the present embodiment, and mounted board 10 is fixed by the screw 5 that is threadedly engaged with bottom 2b.The part of the opening 2a of housing 2 forms stepped, and SiC fluorescent plate 3 is fixed in stepped portion.In addition, housing 2 has the outstanding flange 2c from bottom 2b downwards.In the present embodiment, flange 2c is in whole circumferential formation.
Portion of terminal 4 comprises inorganic material, and the socket that constitutes with respect to the regulation of supplying electric power can be threadedly engaged with.Portion of terminal 4 has: cylindrical portion 4a, be fixed in the inner peripheral surface of the flange 2c of housing 2; Rake 4b forms continuously with the lower end of cylindrical portion 4a, narrows down downwards; First 4c of electrode portion is arranged at the lower end of rake 4b, is formed with pin thread at outer surface; Insulation division 4d forms continuously with the lower end of first 4c of electrode portion, extends to radially inner side; And the second electrode 4e, the radially inner side of inaccessible insulation division 4d.Cylindrical portion 4a, rake 4b and insulation division 4d comprise the pottery with insulating properties, and the first electrode 4c and the second electrode 4e comprise the metal with electric conductivity.Cylindrical portion 4a, rake 4b and insulation division 4d are same material with housing 2 preferably.The first electrode 4c and the second electrode 4e are electrically connected with screw 5 by inner lead 6.In the present embodiment, screw 5 comprises the metal of electric conductivity, and when being threadedly engaged with mounted board 10, then the wiring pattern with mounted board 10 is electrically connected.SiC fluorescent plate 3 comprises per 6 layers of SiC crystallization for the 6H type of periodicity structure, forms tabular.SiC fluorescent plate 3 comprises N as donor impurity, and comprises Al and B as acceptor impurity.In SiC fluorescent plate 3, Al is for example with 2 * 10
18Cm
-3Doped in concentrations profiled, B is for example with 1 * 10
19Cm
-3Doped in concentrations profiled, N is for example with 1.5 * 10
19Cm
-3Doped in concentrations profiled.Wherein, the concentration of Al, B and N is any, but in order to make SiC fluorescent plate 3 excitation and luminous, the concentration of Al and B with must be less than the concentration of N.SiC fluorescent plate 3 is during by uv light induction, produces fluorescence by the alms giver with combining again of being led.The manufacture method of SiC fluorescent plate 3 is any, for example can the SiC crystalline growth be made by sublimed method, chemical vapor-phase growing method.At this moment, by the nitrogen (N in the atmosphere in the suitable adjustment crystalline growth
2) dividing potential drop, thereby can at random set nitrogen gas concn in the SiC fluorescent plate 3.On the other hand, Al and B is mixed in right amount with respect to raw material with the form of simple substance or Al compound and B compound, thus can at random set Al concentration and B concentration in the SiC fluorescent plate 3.
Fig. 3 is the enlarged drawing of SiC fluorescent plate, (a) is the part profilograph, (b) is the part vertical view.
Shown in Fig. 3 (a), SiC fluorescent plate 3 on the surface and the back side be formed with the periodical configuration of regulation.Periodical configuration is made of a plurality of roughly cone shape protuberance 3a, and each protuberance 3a is in periodic arrangement on the direction at the surface of SiC fluorescent plate 3 and the back side.Wherein, also can make each protuberance 3a is the such polygonal taper of pyrometric cone, quadrangular pyramid.
Shown in Fig. 3 (b), each protuberance 3a overlooks the cycle that forms with regulation and arranges by the triangle trellis.Be arbitrarily the average period of each protuberance 3a, but be made as 200nm in the present embodiment.Wherein, average period by the average summit spacing of mutually adjacent protuberance 3a from defining.Each protuberance 3a forms conical shaped, and average base diameter is 150nm, and average height is 400nm.Like this, by forming very little periodical configuration, thereby can prevent to launch on the interface of SiC fluorescent plate 3 and air with respect to the optical wavelength of the light that sees through.Therefore, can make the black light that sends from each LED element 11,12,13,14 and visible light efficient ground to 3 incidents of SiC fluorescent plate, and make visible light from SiC fluorescent plate 3 outgoing efficiently.
Fig. 4 is the diagrammatic top view of mounted board.
As shown in Figure 4, mounted board 10 is overlooked and is formed square, and each LED element 11,12,13,14 is carried with the interval of regulation at fore-and-aft direction and left and right directions.In the present embodiment, each LED element 11,12,13,14 is overlooked the roughly square of 350 μ m of formation, is spaced apart roughly 20 μ m between each LED element 11,12,13,14.In the present embodiment, each LED element 11,12,13,14 does not have sealed.In addition, in the present embodiment,, carried each LED element 11,12,13,14 of 49 altogether with 7 row and 7 row at mounted board 10.Particularly, ultraviolet LED element 11 is 41, and blue-led element 12 is 2, and green LED element 13 is 4, and red LED element 14 is 2.
Fig. 5 is with the key diagram of LED element mounting in mounted board, (a) is the vertical view that carries the preceding mounted board of LED element, (b) is the side view of the mounted board when carrying the LED element, (c) is the side view of the mounted board behind the lift-launch LED element.
Shown in Fig. 5 (a), at mounted board 10, be formed with the wiring pattern 10a that for example comprises Sn, with the electrically connecting position of each LED element 11, be formed with Sn film 10b.In addition, in Fig. 5 (a), illustrate each LED element 11 of flip chip type.
On the other hand, shown in Fig. 5 (b),, be formed with Au film 11a in the pair of electrodes of each LED element 11.In addition, shown in the arrow among Fig. 5 (b), on the Sn of mounted board 10 film 10b, Au film 11a is carried each LED element 11 as the below.
Under this state, under the atmosphere that the composition gas of the mixed gas that comprises hydrogen and nitrogen flows, heating mounted board 10, and each led chip 11 is engaged to mounted board 10.
Thus, shown in Fig. 5 (c), each led chip 11 is connected to the wiring pattern 10a of mounted board 10 by AuSn alloy 10c.
In the manufacturing of light-emitting device, to come to carry each LED element 11,12,13,14 by following operation to mounted board 10, above-mentioned operation comprises: the Sn film forms operation, at the lift-launch face of mounted board 10, forms Sn film 10b; The Au film forms operation, at the non-lift-launch face of each LED element 11,12,13,14, forms Au film 11a; The contact operation contacts the surface of the Sn film 10b of Au film 11a that is formed at each LED element 11,12,13,14 and the lift-launch face that is formed at mounted board 10; And the joint operation, making under Sn film 10b and the Au film 11a state of contact, heating mounted board 10 is engaged to mounted board 10 with each LED element 11,12,13,14 in the atmosphere of the composition gas of the mixed gas that comprises hydrogen and nitrogen.In the present embodiment, in the contact operation, the lift-launch face that makes mounted board 10 is the top, and the non-lift-launch face that makes each LED element 11,12,13,14 is the below, each LED element 11,12,13,14 is put in mounted board 10, thereby Sn film 10b is contacted with Au film 11a; In engaging operation, put under the state of mounted board 10 at each LED element 11,12,13,14, heating mounted board 10 is engaged to mounted board 10 with each LED element 11,12,13,14.
Particularly, at first, shown in Fig. 5 (a), at the mounted board 10 that comprises inorganic material, be formed with the wiring pattern 10a that for example comprises Sn, the electrically connecting position of each LED element 11 on lift-launch face is formed with Sn film 10b.This Sn film 10b for example forms by EB vapour deposition method (electron beam evaporation plating method), and its thickness is 1-8 μ m, as an example, is 3 μ m.In addition, in Fig. 5 (a), illustrate each LED element 11 of flip chip type.
On the other hand, shown in Fig. 5 (b), the pair of electrodes carrying face as the quilt of each LED element 11 is formed with Au film 11a.This Au film 11a for example forms by the EB vapour deposition method, and its thickness is 0.1-1.0 μ m, as an example, is 0.2 μ m.In addition, shown in the arrow among Fig. 5 (b), on the Sn of mounted board 10 film 10b, Au film 11a is carried each LED element 11 as the below.
The mounted board 10 that put each LED element 11,12,13,14 be disposed at heat treatment container in thereafter.Then, under the atmosphere that flows by composition gas at the mixed gas that comprises hydrogen and nitrogen, heating mounted board 10, thus form the AuSn class alloy-layer 10c that Sn and Au alloying form.The ratio that contains of the hydrogen of this composition gas is less than 10%, is 5% as an example.In addition, the flow of forming gas is 50-350cc/min, is 300cc/min as an example.In addition, heat-treat condition is heating-up temperature 250-350 ℃, processing time 1-20 minute.As an example, 300 ℃ of heating-up temperatures, 10 minutes processing times.Thus, shown in Fig. 5 (c), each led chip 11 is engaged to mounted board 10 by AuSn class alloy-layer 10c.In addition, in the present embodiment, the deadweight by each LED element 11,12,13,14 forms AuSn class alloy-layer 10c, but also can be for example with 10-50g/cm
2Pressure come each LED element 11,12,13,14 pressurization.Use screw 5 mounted board 10 be fixed to the bottom 2b of housing 2 thereafter.Then, portion of terminal 4 is connected to the flange 2c of housing 2, and passes through inner lead 6 electrical connection mounted boards 10 and each 4c of electrode portion, 4e, thereby finish light-emitting device 1.
Like this each LED element 11,12,13,14 is engaged under the situation of mounted board 10, need on mounted board 10 and each LED element 11,12,13,14, be pre-formed the alloy film of AuSn alloy.In addition, each LED element 11,12,13,14 is engaged to mounted board 10 by deadweight, therefore not necessarily needs 11,12,13,14 pressurizations of each LED element, can suppress the fault that the inhomogeneities by pressurization causes.And then, on AuSn alloy 10c, be formed with column crystallization, so each LED element 11,12,13,14 high-luminous-efficiency that can access with respect to electric current, to the junction surface that constitutes by AuSn alloy 10c, given good hear resistance and thermal conductivity.
In the light-emitting device 1 that as above constitutes, by portion of terminal 4 being threadably engaged to outside plug, can be thereby become to the state of each LED element 11,12,13,14 supply electric power.Then, if apply electric current, then send the light of provision wavelengths from each LED element 11,12,13,14 to each LED element 11,12,13,14.
The ultraviolet light that sends from ultraviolet LED element 11, is absorbed by SiC fluorescent plate 3 and is transformed to white to SiC fluorescent plate 3 from back surface incident, penetrates from the surface of SiC fluorescent plate 3 afterwards.At this moment, in SiC fluorescent plate 3, as exciting light, be subjected to main luminous by the alms giver to coming with ultraviolet light.In the present embodiment, mixed Al and B be as being led, and the wide wavelength from the blue region to the red area by having peak wavelength at green area luminous obtains lily luminous.Even only lily luminous, also can obtain the higher white light of color reprodubility than the light-emitting device in the past that has made up blue-led element and yellow fluorophor for this.
In addition, the visible light (the present embodiment, being blue light, green light and red light) that sends from each the LED element 12,13,14 except ultraviolet LED element 11, from the back side after 3 incidents of SiC fluorescent plate, do not carry out wavelength conversion, and penetrate from the surface of SiC fluorescent plate 3.This be because: SiC fluorescent plate 3 is by the light stimulus of the following wavelength of 408nm, and only transparent for the wavelength that surpasses 408nm.
At this, on SiC fluorescent plate 3, on the surface and the back side be formed with periodical configuration, thus, suppressed to reflect at the SiC fluorophor 3 and the interface of air from the light of mounted board 10 side incidents and light to outside outgoing.Thus, even the inside of housing 2 is full of the air lower than SiC refractive index, also can penetrate light to the outside reliably.
Like this, if to each LED element 11,12,13,14 energising, then to the fluorescence white light that produce and the mixed light that seen through blue light, green light and the red light of SiC fluorescent plate 3 of outside ejaculation by SiC fluorescent plate 3.Therefore, on the basis of the lily fluorescence of SiC fluorescent plate 3, can pass through blue-led element 12, green LED element 13 and red LED element 14 and replenish blue composition, green composition and red composition, can access white light with high color reprodubility.The light-emitting device 1 of present embodiment utilizes the LED element, can be utilized as the lighting device of the substitute of in the past Halogen lamp LED.
In addition,, obtain the light quantity of about 2801m, obtain the light quantity of about 201m, obtain the light quantity of about 3001m on the whole from 12,4 green LED 13 of 2 blue leds and 2 red LED 14 from 41 ultraviolet LEDs 11 according to experiment.At this moment, the power on condition of each LED element 11,12,13,14 is voltage 3V, electric current 20mA, and the temperature of mounted board 10 is about 70 degree.
In addition, in the present embodiment, send among each LED element 12,13,14 of visible light, make the quantity of green LED element 13 more, so can make the beholder feel that the white light of outgoing is brighter than the quantity of blue-led element 12 and red LED element 14.This is because human visual sensitivity is the highest at green area.
In addition, when each LED element 11,12,13,14 is luminous, each LED element 11,12,13,14 heating.In the light-emitting device 1 of present embodiment, housing 2, SiC fluorescent plate 3, portion of terminal 4, mounted board 10 etc. are made of inorganic material, so the light-emitting device in the past that contains fluorophor with the sealing resin that makes the LED element or have resinous lens is compared, and can improve hear resistance tremendously.Therefore, can save necessary in the past cooling mechanism, or increase the electric current flow through each LED element 11,12,13,14 and increase luminous quantity, very favourable in practicality.In addition, from stable on heating angle, preferably in light-emitting device 1, do not use the structure of resin without exception.
In the light-emitting device 1 of present embodiment, connect each LED element 11,12,13,14 and mounted board 10 by AuSn class alloy-layer, so each LED element 11,12,13,14 heat that produced is passed to mounted board 10 reposefully.Transmit to housing 2 from mounted board 10 to the heat that mounted board 10 transmits, and be dissipated into outside air.
In addition, the insulated part of portion of terminal 4 is by constituting with housing 2 and mounted board 10 identical materials, therefore can reduce the internal stress that causes because of differing from of the coefficient of thermal expansion of each parts of adstante febre etc.At this, use metal screw 5 at the bottom of housing 2 2b with being connected of mounted board 10, but because the bearing of trend (horizontal direction) of bottom 2b and mounted board 10 is vertical with the bearing of trend (above-below direction) of screw 5, the stress that is produced by the difference of coefficient of thermal expansion so be correlated with therewith etc. are less, do not have the situation of screw 5 breakages.
In addition, for example shown in Figure 6 in the above-described embodiment, also can the lens 7 that comprise inorganic material be set at the opening 2a of housing 2.In the light-emitting device 101 of Fig. 6, lens 7 comprise glass, are disposed at the outside of SiC fluorescent plate 3.The exit facet of lens 7 presents the shape that protrude the top, and the light from housing 2 outgoing is carried out optically focused.In this light-emitting device 101, lens 7 comprise inorganic material, so hear resistance is also higher.
In addition, in the above-described embodiment, represent portion of terminal 4 is threadably engaged to the light-emitting device 1 of socket, but Fig. 7 and shown in Figure 9 for example, also can be used as the light-emitting device 201 of the headlight 200a of vehicle 200 usefulness.The vehicle 200 of Fig. 7 is automobiles, forwardly possesses headlight 200a.The light-emitting device 201 that headlight 200a shown in Figure 8 uses is not provided with portion of terminal in the bottom of housing 2, and is connected with radiator 8 at the bottom of housing 2 2b.In addition, on the top of housing 2, be provided with the reflection of light mirror 9 of reflection from peristome 2a outgoing.As shown in Figure 9, by the white light scioptics 220 of speculum 9 reflection to prescribed direction optically focused.In this light-emitting device 201, the heat resisting temperature height so compare with the LED headlight of in the past plastic molded type, can make radiator 8 miniaturizations.In addition, do not hinder yet, can also connect light-emitting device 201 at the assigned position of car body and car body is used as thermal component even the structure of radiator 8 is not set.
In addition, in the above-described embodiment, represented to form Au film 11a and engage with Sn film 10b at mounted board 10 at each LED element 11, but also can be for example shown in Figure 10, be pre-formed AuSn scolder 10d at mounted board 10, and each LED element 11 is soldered to mounted board 10.In addition, in the above-described embodiment, represented that each LED element is engaged by anti-cartridge chip, but also can be for example shown in Figure 10, be the joint that faces up that utilizes lead 11b, the mounting means of each LED element 11,12,13,14 is any.
In addition, in the above-described embodiment, represented that ultraviolet LED element 11 is 41, blue-led element 12 is 2, and green LED element 13 is 4, and red LED element 14 is 2 a example, but can set the quantity of each LED element 11,12,13,14 arbitrarily.In addition, do not need all possess blue-led element 12, green LED element 13 and red LED element 14, for example if obtain the white of warm colour system, then blue-led element 12 can be set, and the ratio of increase red LED element 14, if obtain the white of cool colour system, then red LED element 14 can be set, and increase the ratio of blue led 12.That is, if use the LED element that sends ultraviolet light as a LED element, and use the LED element that sends visible light as the 2nd LED element, then the emission wavelength of each LED element is arbitrarily.Wherein, SiC fluorescent plate 3 is by the light stimulus below the 408nm, so the peak wavelength of a preferred LED element is below the 408nm, and the peak wavelength of the 2nd LED element surpasses 408nm.
In addition, in the above-described embodiment, represented each LED element 11,12,13,14 of blow-by, but also can seal by inorganic material such as clear glasses.In this case, because seal is an inorganic material, so also do not damage the hear resistance of light-emitting device 1.
In addition, in the above-described embodiment, represented in SiC fluorescent plate 3 doped with Al and B as being led, but also can doped with Al and a kind of conduct of B led.Being subjected to the master only for Al alms giver is under the situation of N, be emitted in the fluorescence that blue region has peak wavelength, being subjected to the master, be emitted in the fluorescence that yellow area has peak wavelength only for B alms giver is under the situation of N.That is, if obtain the white of warm colour system, be suitable as being subjected to the master only then with B, if obtain the white of cool colour system, be suitable as being subjected to the master only then with Al.
In addition, also can form the reflectance coating of light reflection ultraviolet at the face of the exiting side of SiC fluorescent plate 3.This reflectance coating for example can be the laminated reflective film (DBR film) that comprises inorganic material, also can be the film that comprises the inorganic material higher than glass emissivity.Thus, can stop ultraviolet light, and make ultraviolet light carry out wavelength conversion efficiently to fluorescent plate 3 lateral reflections to outside outgoing.
In addition, in the above-described embodiment, represented to form housing 2, portion of terminal 4, mounted board 10 by AlN, but so long as inorganic material, then material is any, for example also can use Si, SiC etc., can also use the wavelength conversion SiC of mixed acceptor impurity and donor impurity.Wherein, identical in order to make coefficient of thermal expansion, preferably form these parts with same material.Other for the concrete details structure, also can suitably change, and this need not to illustrate.
Claims (12)
1, a kind of light-emitting device is characterized in that, possesses:
The one LED element sends ultraviolet light;
The 2nd LED element sends visible light;
Substrate has carried an above-mentioned LED element and above-mentioned the 2nd LED element, is made of inorganic material;
Housing holds an above-mentioned LED element, above-mentioned the 2nd LED element and aforesaid substrate, is made of inorganic material; And
The SiC fluorescent plate is doped with at least a and N of B and Al, during the light stimulus of being sent from an above-mentioned LED element, sends visible light.
2, the light-emitting device of putting down in writing as claim 1, wherein,
It is the following light of 408nm that an above-mentioned LED element sends peak wavelength;
Above-mentioned the 2nd LED element sends the light that peak wavelength surpasses 408nm.
3, the light-emitting device of putting down in writing as claim 1, wherein,
Above-mentioned housing has opening;
Above-mentioned SiC fluorescent plate is arranged at above-mentioned opening.
4, the light-emitting device of putting down in writing as claim 1, wherein,
Above-mentioned SiC fluorescent plate has the periodical configuration that forms with the cycle littler than the emission wavelength of an above-mentioned LED element on the face of the light institute incident of sending from an above-mentioned LED element.
5, as the light-emitting device of claim 1 record, wherein, possess:
Lens are arranged at the outside of the above-mentioned SiC fluorescent plate of above-mentioned opening, are made of inorganic material.
6, a kind of light-emitting device is characterized in that, possesses:
The ultraviolet LED element sends ultraviolet light;
Blue-led element sends blue light;
The green LED element sends green light;
The red LED element sends red light;
Substrate has carried above-mentioned ultraviolet LED element, above-mentioned blue-led element, above-mentioned green LED element and above-mentioned red LED element, is made of inorganic material;
Housing holds above-mentioned ultraviolet LED element, above-mentioned blue-led element, above-mentioned green LED element, above-mentioned red LED element and aforesaid substrate, is made of inorganic material; And
The SiC fluorescent plate is doped with at least a and N of B and Al, during the light stimulus of being sent from above-mentioned ultraviolet LED element, sends visible light.
7, a kind of light-emitting device is characterized in that, possesses:
The one LED element sends ultraviolet light;
The 2nd LED element sends visible light;
The SiC fluorescent plate is doped with at least a and N of B and Al, during the light stimulus of being sent from an above-mentioned LED element, sends visible light;
Substrate has carried an above-mentioned LED element and above-mentioned the 2nd LED element, is made of inorganic material; And
AuSn class alloy-layer engages with an above-mentioned LED element and above-mentioned the 2nd LED element aforesaid substrate, has the column crystallization that extends to the approximate vertical direction with respect to aforesaid substrate.
8, as the light-emitting device of claim 7 record, wherein, possess:
Housing holds aforesaid substrate, is made of inorganic material.
9, the light-emitting device of putting down in writing as claim 7, wherein,
The peak wavelength of an above-mentioned LED element is below the 408nm;
The peak wavelength of above-mentioned the 2nd LED element surpasses 408nm.
10, the light-emitting device of putting down in writing as claim 7, wherein,
Above-mentioned the 2nd LED element is these 3 kinds of LED elements of blue-led element, green LED element and red LED element.
11, a kind of manufacture method of light-emitting device when making the light-emitting device of putting down in writing as claim 7, comprises following operation:
The Sn film forms operation, at the lift-launch face of aforesaid substrate, forms the Sn film;
The Au film forms operation, at the non-lift-launch face of an above-mentioned LED element and above-mentioned the 2nd LED element, forms the Au film;
The contact operation makes the above-mentioned Au film that is formed at an above-mentioned LED element and above-mentioned the 2nd LED element contact with the surface of the above-mentioned Sn film of the above-mentioned lift-launch face that is formed at aforesaid substrate; And
Engage operation,, in the atmosphere of forming gas that the mixed gas by hydrogen and nitrogen constitutes, heat aforesaid substrate, an above-mentioned LED element and above-mentioned the 2nd LED element are engaged to aforesaid substrate making under above-mentioned Sn film and the above-mentioned Au film state of contact.
12, as the manufacture method of the light-emitting device of claim 11 record, wherein,
In above-mentioned contact operation, making the above-mentioned lift-launch face of aforesaid substrate is the top, making the non-lift-launch face of an above-mentioned LED element and above-mentioned the 2nd LED element is the below, an above-mentioned LED element and above-mentioned the 2nd LED element is put in aforesaid substrate, thereby above-mentioned Sn film is contacted with above-mentioned Au film;
In above-mentioned joint operation, put under the state of aforesaid substrate at an above-mentioned LED element and above-mentioned the 2nd LED element, the heating aforesaid substrate is engaged to aforesaid substrate with an above-mentioned LED element and above-mentioned the 2nd LED element.
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| JP178140/2008 | 2008-07-08 | ||
| JP2008178140A JP2010021202A (en) | 2008-07-08 | 2008-07-08 | Light emitting device |
| JP183557/2008 | 2008-07-15 |
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| CN101625084A true CN101625084A (en) | 2010-01-13 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102345805A (en) * | 2010-08-03 | 2012-02-08 | 富士迈半导体精密工业（上海）有限公司 | Light-emitting diode bulb |
| CN102410460A (en) * | 2011-12-05 | 2012-04-11 | 深圳市启明和丰照明科技有限公司 | LED (light-emitting diode) lamp capable of freely adjusting color temperature and free adjustment method for color temperature thereof |
| CN102767703A (en) * | 2011-05-03 | 2012-11-07 | 深圳市裕富照明有限公司 | Adjustable LED color temperature lamp |
| CN102782401A (en) * | 2010-03-05 | 2012-11-14 | 法雷奥照明公司 | Lighting and/or signaling device for a motor including a surface light source |
| CN102966918A (en) * | 2011-08-30 | 2013-03-13 | 欧司朗股份有限公司 | LED (light emitting diode) illuminating equipment based on color mixing and remote fluophor layout |
| CN103958959A (en) * | 2011-11-23 | 2014-07-30 | 张永焕 | LED lamp |
| CN107429906A (en) * | 2015-03-31 | 2017-12-01 | 优志旺电机株式会社 | Fluorescence light source device |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010027645A (en) * | 2008-07-15 | 2010-02-04 | Ushio Inc | Light emitting device and fabrication process therefor |
| TW201116753A (en) * | 2009-09-30 | 2011-05-16 | Ceram Tec Gmbh | Lamp having a variable substrate as a base for a light source |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040217364A1 (en) * | 2003-05-01 | 2004-11-04 | Cree Lighting Company, Inc. | Multiple component solid state white light |
| US20070057269A1 (en) * | 2003-06-05 | 2007-03-15 | Matsushita Electric Industrial Co., Ltd. | Phosphor, semiconductor light emitting device, and fabrication method thereof |
| US20070176531A1 (en) * | 2004-03-24 | 2007-08-02 | Hiroyuki Kinoshita | Phoshor and light-emitting diode |
| US20080106887A1 (en) * | 2006-10-31 | 2008-05-08 | Tir Technology Lp | Light source comprising a light-excitable medium |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1203557C (en) * | 2000-05-29 | 2005-05-25 | 电灯专利信托有限公司 | LED-based white-light emitting lighting unit |
| DE10101554A1 (en) * | 2001-01-15 | 2002-08-01 | Osram Opto Semiconductors Gmbh | emitting diode |
| JP2005158957A (en) * | 2003-11-25 | 2005-06-16 | Matsushita Electric Works Ltd | Light emitting device |
| JP2005079244A (en) * | 2003-08-29 | 2005-03-24 | Sanyo Electric Co Ltd | Light emitting diode |
| JP4285199B2 (en) * | 2003-10-28 | 2009-06-24 | パナソニック電工株式会社 | Light emitting element |
| JP2005136006A (en) * | 2003-10-28 | 2005-05-26 | Matsushita Electric Works Ltd | Light-emitting device and producing device using it |
| JP4153455B2 (en) * | 2003-11-28 | 2008-09-24 | 学校法人 名城大学 | Phosphor and light emitting diode |
| US20070128068A1 (en) * | 2005-11-15 | 2007-06-07 | Hitachi Metals, Ltd. | Solder alloy, solder ball, and solder joint using the same |
| JP4963867B2 (en) * | 2006-04-28 | 2012-06-27 | 学校法人 名城大学 | Method for creating light control structure, light control structure and semiconductor light emitting device |
| JP2007305708A (en) * | 2006-05-10 | 2007-11-22 | Rohm Co Ltd | Semiconductor light emitting element array, and illumination apparatus using the same |
| WO2008001935A1 (en) * | 2006-06-30 | 2008-01-03 | Panasonic Corporation | Antireflection structure and method for producing the same |
| JP2008085324A (en) * | 2006-09-01 | 2008-04-10 | Intekkusu Kk | Light source apparatus |
| JP4989170B2 (en) * | 2006-09-20 | 2012-08-01 | オスラム・メルコ株式会社 | Compact LED lamp |
-
2008
- 2008-07-08 JP JP2008178140A patent/JP2010021202A/en active Pending
-
2009
- 2009-07-07 CN CN200910158740A patent/CN101625084A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040217364A1 (en) * | 2003-05-01 | 2004-11-04 | Cree Lighting Company, Inc. | Multiple component solid state white light |
| US20070057269A1 (en) * | 2003-06-05 | 2007-03-15 | Matsushita Electric Industrial Co., Ltd. | Phosphor, semiconductor light emitting device, and fabrication method thereof |
| US20070176531A1 (en) * | 2004-03-24 | 2007-08-02 | Hiroyuki Kinoshita | Phoshor and light-emitting diode |
| US20080106887A1 (en) * | 2006-10-31 | 2008-05-08 | Tir Technology Lp | Light source comprising a light-excitable medium |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102782401A (en) * | 2010-03-05 | 2012-11-14 | 法雷奥照明公司 | Lighting and/or signaling device for a motor including a surface light source |
| CN102345805A (en) * | 2010-08-03 | 2012-02-08 | 富士迈半导体精密工业（上海）有限公司 | Light-emitting diode bulb |
| CN102767703A (en) * | 2011-05-03 | 2012-11-07 | 深圳市裕富照明有限公司 | Adjustable LED color temperature lamp |
| CN102966918A (en) * | 2011-08-30 | 2013-03-13 | 欧司朗股份有限公司 | LED (light emitting diode) illuminating equipment based on color mixing and remote fluophor layout |
| CN103958959A (en) * | 2011-11-23 | 2014-07-30 | 张永焕 | LED lamp |
| CN103958959B (en) * | 2011-11-23 | 2017-04-26 | 张永焕 | LED lamp |
| CN102410460A (en) * | 2011-12-05 | 2012-04-11 | 深圳市启明和丰照明科技有限公司 | LED (light-emitting diode) lamp capable of freely adjusting color temperature and free adjustment method for color temperature thereof |
| CN107429906A (en) * | 2015-03-31 | 2017-12-01 | 优志旺电机株式会社 | Fluorescence light source device |
| CN107429906B (en) * | 2015-03-31 | 2019-11-05 | 优志旺电机株式会社 | Fluorescent light source device |
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|---|---|
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Application publication date: 20100113 |