CN101624700A - Preparation method of surface texture of polycrystalline silicon solar cell - Google Patents
Preparation method of surface texture of polycrystalline silicon solar cell Download PDFInfo
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- CN101624700A CN101624700A CN200910183867A CN200910183867A CN101624700A CN 101624700 A CN101624700 A CN 101624700A CN 200910183867 A CN200910183867 A CN 200910183867A CN 200910183867 A CN200910183867 A CN 200910183867A CN 101624700 A CN101624700 A CN 101624700A
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Abstract
The invention discloses a preparation method of the surface texture of a polycrystalline silicon solar cell. The surface texture of the polycrystalline silicon solar cell is prepared by an acid etching solution, the acid etching solution contains hydrofluoric acid, an oxidant and a modifier, wherein the concentration range of the hydrofluoric acid is from 13moles/litre to 17moles/litre; the oxidant is a potassium permanganate solution, and the concentration range of the oxidant is from 0.01moles/litre to 0.5moles/litre; the modifier is sodium nitrite, and the concentration range of the modifier is from 0.05moles/litre to 0.2moles/litre; the etching temperature is 10-30 DEG C, and the etching time is 10-45 minutes. The invention reduces the reflectivity of the polycrystalline silicon solar cell and has little environmental pollution.
Description
Technical field
The invention belongs to the preparation area of solar cell, be specifically related to a kind of method of surface texture of polycrystalline silicon solar cell.
Background technology
The world today, the lasting use of conventional energy resources has brought a series of economy and social concerns such as energy scarcity and environmental degradation, the development solar cell be address the above problem by way of one of.High conversion efficiency, low cost are the solar cell main development tendency, also are the targets that technical study person pursues.
In order to improve the efficiency of conversion of battery, just must reduce the luminous reflectance on surface, increase effective absorption of light.In the prior art, surperficial texture and deposition antireflective coating are two kinds of main method that reduce the solar battery surface reflectivity.So-called solar-cell timepiece plane texture is present in the regular or random different surface topography of battery surface exactly; Just because of the existence of surperficial texture, the reflectivity of solar cell will reduce greatly, has just increased the absorption of light, and therefore, preparation solar-cell timepiece plane texture has been widely used in the solar cell field.
At present, the technology comparative maturity of preparation monocrystalline silicon surface texture, this technology is to utilize the various crystal orientation characteristic that erosion rate is different of crystalline silicon to prepare surperficial texture under certain condition, forms the pyramid surface texture of stochastic distribution.
Yet, because polysilicon has a lot of crystal grain to constitute, and the crystal orientation stochastic distribution, the polysilicon surface texture effect of utilizing the surperficial texture technology formation of monocrystalline silicon piece is not desirable especially.
In order to obtain ideal surface texture at polysilicon surface, the investigator has studied the technology of various surperficial texture, as existing reactive ion etching, mask corrosion method, acid corrosion method etc.Wherein, reactive ion etching needs relative complex and expensive equipment, and complex technical process, has limited its application aborning; The mask corrosion method can reduce the surface albedo of polysilicon significantly, but owing to its complex process, apparatus expensive, also is used widely in industrial production; Although the acid corrosion method can obtain suitable surperficial texture of producing and more easy to control, produce a large amount of heavy metal ion, environment is caused great pollution.
Therefore, develop a kind of preparation method of surface texture of polycrystalline silicon solar cell, and reduce pollution, have significant and positive significance environment.
Summary of the invention
The preparation method who the purpose of this invention is to provide a kind of surface texture of polycrystalline silicon solar cell, with the efficiency of conversion of raising battery, and reduction is to the pollution of environment.
To achieve the above object of the invention, the technical solution used in the present invention is: a kind of preparation method of surface texture of polycrystalline silicon solar cell, and adopt acid etching solution to make, described acid etching solution is made up of hydrofluoric acid, oxygenant and properties-correcting agent; The concentration range of described hydrofluoric acid is 13～17 mol; Described oxygenant is a potassium permanganate solution, and concentration range is 0.01～0.5 mol; Described properties-correcting agent is Sodium Nitrite, and concentration range is 0.05～0.2 mol; Corrosion temperature is 10～30 ℃, and the acid corrosion time is 10～45 minutes.
In the technique scheme, when acid corrosion, polysilicon is immersed in this acid etching solution.
In the technique scheme, after polysilicon chip corroded through acid etching solution, the surface formed 3～5 microns surperficial texture.
In the technique scheme, the thickness of the polysilicon chip that is corroded is 5～10 microns.
In the technique scheme, this surface texture of polycrystalline silicon solar cell is to finish in the cleaning process to affected layer.
In the technique scheme, after surperficial texture is finished, polysilicon chip immersed cleaned in the NaOH solution 10～120 seconds.The mass concentration of described NaOH solution is 0.5～2%.
Because the employing of technique scheme, compared with prior art, the present invention has following advantage:
1. the surface texture of polycrystalline silicon solar cell that makes of the present invention can significantly reduce the surface albedo of polysilicon chip, compares with common polycrystalline silicon solar cell, and reflectivity reduces more than 8%, thereby makes solar cell have high conversion rate.
2. preparation method's cost of the present invention is low, pollution is little, and etching time is short, easy handling, is suitable for applying.
Description of drawings
Accompanying drawing 1 is the reflectance test figure of the embodiment of the invention one;
Accompanying drawing 2 is reflectance test figure of the embodiment of the invention two;
Accompanying drawing 3 is reflectance test figure of the embodiment of the invention three.
Embodiment
Below in conjunction with drawings and Examples the present invention is further described:
Embodiment one
With concentration is the hydrofluoric acid of 17 mol, concentration is the potassium permanganate of 0.01 mol, concentration is that the properties-correcting agent Sodium Nitrite of 0.1 mol mixes, and will put into the mixing acid etchant solution without 156 * 156 millimeters P type polysilicon chip of special cleaning and soak.Corrosion temperature is 35 ℃, and etching time is 15 minutes, and after corrosion finishes polysilicon chip being immersed massfraction is to clean 30 seconds in 1% the NaOH solution.Dry after cleaning finishes, carry out reflectance test, test result is referring to shown in the accompanying drawing 1.As can be seen from the figure, compare common polysilicon chip, the reflectivity of present embodiment silicon chip is all lower in each wavelength period, whole decline about 8%.
Embodiment two
With concentration is the hydrofluoric acid of 13 mol, concentration is the potassium permanganate of 0.05 mol, concentration is that the properties-correcting agent Sodium Nitrite of 0.2 mol mixes, and will put into the mixing acid etchant solution without 156 * 156 millimeters P type polysilicon chip of special cleaning and soak.Corrosion temperature is 25 ℃, and etching time is 35 minutes, and after corrosion finishes polysilicon chip being immersed massfraction is to clean 20 seconds in 1% the NaOH solution.Dry after cleaning finishes, carry out reflectance test, test result is referring to shown in the accompanying drawing 2.As can be seen from the figure, compare common polysilicon chip, the reflectivity of present embodiment silicon chip is all lower in each wavelength period.
Embodiment three
With concentration is the hydrofluoric acid of 15 mol, concentration is the potassium permanganate of 0.4 mol, concentration is that the properties-correcting agent Sodium Nitrite of 0.15 mol mixes, and will put into the mixing acid etchant solution without 156 * 156 millimeters P type polysilicon chip of special cleaning and soak.Corrosion temperature is 30 ℃, and etching time is 30 minutes, and after corrosion finishes polysilicon chip being immersed massfraction is to clean 30 seconds in 1% the NaOH solution.Dry after cleaning finishes, carry out reflectance test, test result is referring to shown in the accompanying drawing 3.As can be seen from the figure, compare common polysilicon chip, the reflectivity of present embodiment silicon chip is all lower in each wavelength period.
Claims (7)
1. the preparation method of a surface texture of polycrystalline silicon solar cell is characterized in that: adopt acid etching solution to make, described acid etching solution is made up of hydrofluoric acid, oxygenant and properties-correcting agent; The concentration range of described hydrofluoric acid is 13～17 mol; Described oxygenant is a potassium permanganate solution, and concentration range is 0.01～0.5 mol; Described properties-correcting agent is Sodium Nitrite, and concentration range is 0.05～0.2 mol; Corrosion temperature is 10～30 ℃, and the acid corrosion time is 10～45 minutes.
2. the preparation method of surface texture of polycrystalline silicon solar cell according to claim 1 is characterized in that: when acid corrosion, polysilicon is immersed in this acid etching solution.
3. the preparation method of surface texture of polycrystalline silicon solar cell according to claim 1 is characterized in that: polysilicon chip through the acid etching solution corrosion after, the surface forms 3～5 microns surperficial texture.
4. the preparation method of surface texture of polycrystalline silicon solar cell according to claim 1, it is characterized in that: the thickness of the polysilicon chip that is corroded is 5～10 microns.
5. the preparation method of surface texture of polycrystalline silicon solar cell according to claim 1, it is characterized in that: this surface texture of polycrystalline silicon solar cell is to finish in the cleaning process to affected layer.
6. the preparation method of surface texture of polycrystalline silicon solar cell according to claim 1 is characterized in that: after surperficial texture is finished, polysilicon chip soaked cleaned in the NaOH solution 10～120 seconds.
7. the preparation method of surface texture of polycrystalline silicon solar cell according to claim 6, it is characterized in that: the mass concentration of described NaOH solution is 0.5～2%.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200910183867A CN101624700A (en) | 2009-08-03 | 2009-08-03 | Preparation method of surface texture of polycrystalline silicon solar cell |
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| CN200910183867A CN101624700A (en) | 2009-08-03 | 2009-08-03 | Preparation method of surface texture of polycrystalline silicon solar cell |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102181936A (en) * | 2010-10-26 | 2011-09-14 | 江阴浚鑫科技有限公司 | Method and corrosive liquid for manufacturing multicrystalline silicon texture |
| CN102479868A (en) * | 2010-11-25 | 2012-05-30 | 浙江贝盛光伏股份有限公司 | Method for quickly adjusting thickness reduction amount during polycrystal texturing |
| CN109560168A (en) * | 2018-12-03 | 2019-04-02 | 山东力诺太阳能电力股份有限公司 | A method of it is activated for polysilicon solar battery slice etching solution |
-
2009
- 2009-08-03 CN CN200910183867A patent/CN101624700A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102181936A (en) * | 2010-10-26 | 2011-09-14 | 江阴浚鑫科技有限公司 | Method and corrosive liquid for manufacturing multicrystalline silicon texture |
| CN102479868A (en) * | 2010-11-25 | 2012-05-30 | 浙江贝盛光伏股份有限公司 | Method for quickly adjusting thickness reduction amount during polycrystal texturing |
| CN102479868B (en) * | 2010-11-25 | 2014-04-02 | 浙江贝盛光伏股份有限公司 | Method for quickly adjusting thickness reduction amount during polycrystal texturing |
| CN109560168A (en) * | 2018-12-03 | 2019-04-02 | 山东力诺太阳能电力股份有限公司 | A method of it is activated for polysilicon solar battery slice etching solution |
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Open date: 20100113 |