CN101624176B - Method and apparatus for manufacturing integrated circuit material - Google Patents
Method and apparatus for manufacturing integrated circuit material Download PDFInfo
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- CN101624176B CN101624176B CN200910181989XA CN200910181989A CN101624176B CN 101624176 B CN101624176 B CN 101624176B CN 200910181989X A CN200910181989X A CN 200910181989XA CN 200910181989 A CN200910181989 A CN 200910181989A CN 101624176 B CN101624176 B CN 101624176B
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Abstract
The invention discloses a method for manufacturing an integrated circuit material and a preparing apparatus using the same. Liquid containing a metal carbon nanotube and a semiconductor carbon nanotube flows into the same container from the same entrance, and after acted by a variable magnetic field in the container, the mixed metal carbon nanotube is separated from the semiconductor carbon nanotube, and then the separated metal carbon nanotube and the semiconductor carbon nanotube respectively flow out form two outlets. The metal carbon nanotube and the semiconductor carbon nanotube prepared by the manufacturing method and the manufacturing apparatus of the invention have high purity, thereby greatly improving the product yield of the integrated circuit using the semiconductor carbon nanotube. In addition, the manufacturing method is simple and easy with low cost, and the manufacturing apparatus can greatly reduce the production cost of the carbon nanotube with high purity.
Description
Technical field
The present invention relates to a kind of preparation method of integrated circuit material, and a kind of device for preparing integrated circuit material of using this preparation method, the integrated circuit material that wherein prepares gained is mainly semiconductive carbon nano tube, metallic carbon nanotubes and monoatomic layer carbon.
Background technology
Along with development of integrated circuits, continue to dwindle difficulty day by day based on silicon materials transistorized.Semiconductive carbon nano tube is owing to have small size and the high characteristics of electrical conductivity, in for the integrated circuit manufacturing, has very high using value, and can realize metalloid-oxide-silicon (metal-oxide-silicon, MOS) function of FET by the FET that semiconductive carbon nano tube is formed.Fig. 1 is a carbon nanotube field-effect pipe, has one deck insulator to insulate between grid 101 and the semiconductive carbon nano tube 104, and by grid 101 is applied voltage, source electrode 102 and the size of current that drains between 103 can be controlled.
At present, in the manufacture process of semiconductive carbon nano tube, often be accompanied by the generation of metallic carbon nanotubes.After the semiconductive carbon nano tube among Fig. 1 104 is replaced by metallic carbon nanotubes, electric current between the source electrode of this FET and the drain electrode is not controlled by the voltage of grid, that is to say that this was lost efficacy by the FET that metallic carbon nanotubes constitutes.Therefore, semiconductive carbon nano tube and metallic carbon nanotubes to separate making FET be vital.
Consult Chinese patent application No. 200580026051.0, the normally centrifugation of method of separating semiconductor CNT and metallic carbon nanotubes at present, adopt the SURFACTANT ADSORPTION CNT, the weight of CNT after absorption of different qualities is changed, and then centrifugal purification.This method need be used special surfactant and long centrifugal purification process, costs an arm and a leg, and equally also just is not easy to large-scale production.
The present invention quotes the content that this patent is put down in writing as prior art.
Summary of the invention
In order to solve the problems of the technologies described above, the present invention proposes a kind of new technology of separating carbon nano-tube, simple, with low cost.The invention allows for a kind of preparation facilities of this technology of application.
A kind of preparation method of integrated circuit material comprises the steps:
A) integrated circuit material is immersed in the conducting liquid;
B) described conducting liquid is poured in the container;
C) two pairs of magnetic lines of force vertical or subvertical magnetic pole mutually is set around described container, two relative magnetic poles form a magnetic field, and the magnetic line of force of described two pairs of magnetic poles all passes described container;
D) move wherein any a pair of magnetic pole, make described integrated circuit material in described container, be subjected to the effect in the magnetic field of conversion;
E) collect the integrated circuit material of separating respectively.
Further, among the described step a integrated circuit material for comprising metallic carbon nanotubes at least, the composite material of semiconductive carbon nano tube.Preparation method's essence of described integrated circuit material is the separation method of metallic carbon nanotubes and semiconductive carbon nano tube, integrated circuit material described in the steps d in described container, be subjected to conversion magnetic field effect and the integrated circuit material of mixing is separated.
Again further, described conducting liquid is electrolyte or the organic solvent that certain electrical conductivity is arranged.The magnetic field that described any a pair of magnetic pole produces is permanent-magnetic field or electromagnetic field, and its intensity is 0.00001-10 tesla.
Further, in the described steps d moving direction of any a pair of magnetic pole for perpendicular to or near the magnetic line of force that forms perpendicular to self: promptly be positioned at the above-below direction on the plane that two pairs of magnetic lines of force that magnetic pole produced form, perhaps perpendicular to the fore-and-aft direction on the plane of the two pairs of magnetic lines of force that magnetic pole produced compositions.
In the described steps d, when moving wherein any a pair of magnetic pole, can also exchange this polarity, perhaps exchange another polarity magnetic pole to magnetic pole.Can adopt electromagnet this moment, only needs to change the polarity that the sense of current can be exchanged magnetic pole.
A kind of preparation facilities of using the said integrated circuit material preparation method, comprise a container, described container comprises an inlet, and first outlet separated by a distance and second outlet, be provided with two pairs of magnetic lines of force vertical or subvertical magnetic pole mutually around the described container, two relative magnetic poles form a magnetic field, and the magnetic line of force of described two pairs of magnetic poles all passes described container; Wherein a pair of described magnetic pole can move with respect to described container arbitrarily.
Above-mentioned preparation facilities connects continuously in order and forms a kind of multistage preparation facilities of integrated circuit material, and the inlet that is connected in the next stage preparation facilities is aimed in first outlet of upper level preparation facilities.
Described first outlet is used for collection semiconductor CNT or metallic carbon nanotubes, i.e. more conducting liquid or the more conducting liquid of metallic carbon nanotubes content of semiconductive carbon nano tube content.Accordingly, second outlet can be collected metallic carbon nanotubes or semiconductive carbon nano tube.Like this, the separation preparation by multistage can obtain purer semiconductive carbon nano tube or metallic carbon nanotubes.
The beneficial effect that preparation method of the present invention had is: with simple and reliable method metallic carbon nanotubes and semiconductive carbon nano tube are separated.Because this method has directly utilized metallic carbon nanotubes to have different electrical conductivity with semiconductive carbon nano tube in special magnetic field, so the selectivity height of isolation technics, the purity of separating the back material is also than the getable purity height of prior art.
After adopting preparation facilities of the present invention, highly purified metallic carbon nanotubes and semiconductive carbon nano tube can be purified respectively, and this will improve the yield of the integrated circuit that uses the semiconductor carbon nanometer tube manufacturing greatly.Simultaneously, because preparation method of the present invention is simple, with low cost, therefore adopt preparation facilities of the present invention can reduce the manufacturing cost of high-purity carbon nano tube greatly.
Description of drawings
The present invention is further detailed explanation below in conjunction with accompanying drawing and the specific embodiment:
Fig. 1 is based on the field-effect tube structure figure of semiconductive carbon nano tube;
Fig. 2 is an integrated circuit material preparation method's of the present invention schematic diagram;
Fig. 3 is the microenvironment schematic diagram of CNT in the integrated circuit material preparation process of the present invention;
Fig. 4 to Fig. 6 is the schematic diagram of the specific embodiment that CNT moves after magnetic pole 201 and 202 motions and magnetic line of force direction change among Fig. 2;
Fig. 7 is the integrated circuit material preparation facilities of the single-stage that constitutes according to preparation method proposed by the invention;
Fig. 8 is the multistage integrated circuit material preparation facilities that constitutes according to preparation method proposed by the invention.
The specific embodiment
Fig. 2 is an integrated circuit material preparation method's of the present invention schematic diagram, the i.e. schematic diagram of the method for separating metallic CNT and semiconductive carbon nano tube how, wherein, CNT 205 is in the many metallic carbon nanotubes, and CNT 206 is in the many semiconductive carbon nano tubes.Above-mentioned these CNTs are soaked in the liquid in the container 210.Described liquid is electrolyte or the organic solvent that certain electrical conductivity is arranged.Magnetic pole 201 is the N utmost point or the S utmost point, and magnetic pole 202 is the S utmost point or the N utmost point.Like this, magnetic pole 201 has constituted a magnetic field with magnetic pole 202 these two relative magnetic poles.Magnetic line of force 211-a, 211-b, 211-c, 211-d represent the magnetic line of force between described magnetic pole 201 and the magnetic pole 202.Relatively perpendicular to magnetic line of force 211-a, 211-b, 211-c, the magnetic line of force 212-a of 211-d, 212-b, 212-c, 212-d have another that magnetic pole 203 and magnetic pole 204 are produced.Two pairs of above-mentioned magnetic poles all be arranged on container 210 around.
When magnetic pole 201 and magnetic pole 202 move upward along direction 208 and direction 209 respectively, and the magnetic line of force and metallic carbon nanotubes 205 are incomplete when parallel, and the magnetic line of force between magnetic pole 201 and the magnetic pole 202 is understood cutting metal CNT 205.According to Lenz's law, the athletic meeting of cutting magnetic line produces electromotive force in CNT.Fig. 3 has provided the 205 residing microenvironments of CNT shown in Fig. 2.Magnetic line of force 311-a and 311-b are representing the direction in magnetic field.Because CNT is in the conductive liquid, the electromotive force that cutting magnetic line produced can form current loop by anion in CNT and the liquid 301 and cation 302.Because the resistance of metallic carbon nanotubes is far smaller than the resistance of semiconductor carbon nanometer tube, the electric current that flows through metallic carbon nanotubes can be greater than the electric current of semiconductor carbon nanometer tube.In Fig. 2, when there are certain angle in the electric current by CNT 205 and CNT 206 and the magnetic line of force between magnetic pole 203 and 204, can produce Lorentz force.This Lorentz force can cause CNT to move.Because the current ratio by metallic carbon nanotubes 205 is big by the electric current of semiconductive carbon nano tube 206, the translational speed of the CNT 205 just translational speed than CNT 206 is big, that is to say, in the identical time, the displacement of CNT 205 is longer than the displacement of CNT 206.Because the difference of displacement, metallic carbon nanotubes just can be separated with semiconductive carbon nano tube.
Fig. 4 is the schematic diagram that moves of CNT after magnetic pole 201 and 202 motions among Fig. 2.This figure has pointed out CNT present position behind the mobile vertically upward certain hour of magnetic pole 201 and 202.Such as, after mobile magnetic pole 201 and 202, metallic carbon nanotubes has moved to metallic carbon nanotubes 401 residing positions by CNT 205 residing positions.Because moving of semiconductive carbon nano tube is very slow, after mobile magnetic pole 201 and 202, semiconductive carbon nano tube has moved to semiconductive carbon nano tube 402 residing positions from the position that CNT 206 is in.
Fig. 5 discloses the second embodiment of the present invention, the polarity of magnetic pole 201 and magnetic pole 202 is identical with first embodiment among Fig. 2, but the direction of motion changes into when moving vertically downward along direction 208 and 209 respectively, magnetic line of force 212-a, 212-b, 212-c, the direction of 212-d need be opposite with the magnetic line of force direction among Fig. 2, and a metallic carbon nanotubes is moved to the orientation of CNT 401 from the position of CNT 205.That is to say, at this moment opposite among the polarity of magnetic pole 203 and magnetic pole 204 needs and Fig. 2.In Fig. 5, magnetic pole 201 and 202 moves downward, simultaneously the magnetic line of force direction generation conversion between the magnetic pole 203 and 204.
Fig. 6 discloses the third embodiment of the present invention, first embodiment among the polarity of magnetic pole 201 and magnetic pole 202 and Fig. 2 is opposite, and the direction of motion is respectively when direction 208 and 209 is moved vertically downward, magnetic line of force 212-a, 212-b, 212-c, the direction of 212-d need be identical with the magnetic line of force direction among Fig. 2, just may make a metallic carbon nanotubes move to the position of CNT 401 from the position of CNT 205.In Fig. 6, magnetic pole 201 and 202 moves downward, simultaneously the magnetic line of force direction generation conversion between the magnetic pole 201 and 202.
From the second and the 3rd embodiment as can be seen, the separation of integrated circuit material and fixing point are collected and the direction of motion of magnetic pole, the magnetic line of force directional correlation of magnetic pole, therefore can by the second and the 3rd embodiment exemplified change the direction of motion of magnetic pole simultaneously like that and the magnetic line of force direction of magnetic pole gets final product.The not exhaustive embodiment of the present invention, magnetic pole 201 and magnetic pole 202 are moved back and forth, and the polarity that makes the polarity of magnetic pole 201,202 or magnetic pole 203,204 is exchanged simultaneously by the magnetic pole 201 and magnetic pole 202 characteristics of motion and is got final product: be similar to the combination of second embodiment among first embodiment and Fig. 5 among Fig. 4, when moving back and forth magnetic pole 201 and magnetic pole 202, exchange the polarity of magnetic pole 203 and magnetic pole 204; The perhaps combination of the 3rd embodiment among first embodiment and Fig. 6 among Fig. 4 when moving back and forth magnetic pole 201 and magnetic pole 202, is exchanged the polarity of this magnetic pole 201 and magnetic pole 202.Can adopt this moment electromagnet to substitute the magnetic pole of permanent magnet, therefore only need to change the polarity that the sense of current promptly realizes exchanging magnetic pole.
According to the principle of above-mentioned explanation, the separator as shown in Figure 7 700 that can constitute.On the upper left quarter of the container in Fig. 2 210, connect an inlet 720, take back at the middle part of bottom and the middle part takes over to distribute two outlets 721 and 722 are set, certain distance is arranged between the two.Contain the metallic carbon nanotubes of mixing and the liquid of semiconductive carbon nano tube and enter container 210 by inlet 720.Passing through magnetic pole 201 along direction 710,712, and magnetic pole 202 moves up and down along direction 713,714, after the polarity of magnetic pole 201,202,203,204 is carried out suitable conversion simultaneously, final most semiconductive carbon nano tube flows out from exporting 721, and most metallic carbon nanotubes flows out from exporting 722.This is because after using the method that the present invention proposes, metallic carbon nanotubes move distance longer.The typical movement locus of metallic carbon nanotubes is, move to CNT 706 positions from the position at CNT 705 places near, then move near CNT 707 positions, move to the outlet 722 at CNT 708 places at last.The typical movement locus of semiconductive carbon nano tube is, move to CNT 702 positions from the position at CNT 701 places near, then move near CNT 703 positions, move to the outlet 721 at CNT 704 places at last.Like this, metallic carbon nanotubes is separated with the liquid that semiconductive carbon nano tube mixes mutually: be higher than the semiconductive carbon nano tube concentration in the liquid that is flowed into by inlet 720 by the semiconductive carbon nano tube concentration in 721 liquid that flow out; Be higher than by the metallic carbon nanotubes concentration in the liquid of inlet 720 inflows by the metallic carbon nanotubes concentration in 722 liquid that flow out.The container of this carbon nanotube separation, outlet, inlet and additional magnetic pole have just constituted one-level separator 700.
A plurality of one-level separators 700 can connect into multi-stage separation device.As shown in Figure 8, by the inlet 720-2 that jockey 723-1 is connected to second-stage separation device 700-2, can carry out 2 grades of separation with the semiconductive carbon nano tube of first stage separation device 700-1 outlet 721-1.It is higher than the semiconductive carbon nano tube concentration of the semiconductive carbon nano tube outlet 721-1 of one-level separator from the semiconductive carbon nano tube purity that outlet 721-2 obtains that secondary separates the back.The rest may be inferred, can be connected to the outlet of the semiconductive carbon nano tube of n-1 level by jockey 723-n-1 the inlet 720-n of the separator 700-n of n level.N is a natural number.Like this, along with the increase of n, the purity of semiconductive carbon nano tube also can constantly increase.Can certainly the inlet 720-2 of second-stage separation device 700-2 will be connected to the metallic carbon nanotubes outlet 722-1 of first stage separation device 700-1 by jockey 723-1, can carry out 2 grades of separation, the rest may be inferred, and then obtain the metallic carbon nanotubes of purity change.
Utilize design principle of the present invention, can also separate the integrated circuit material that comprises semiconductive carbon nano tube, metallic carbon nanotubes and monoatomic layer carbon.
All only exemplified orthogonal two pairs of magnetic poles in the embodiments of the invention, but the present invention does not get rid of the magnetic pole more than two pairs, the direction that only need adjust the magnetic line of force gets final product.
The present invention still has multiple concrete embodiment.The magnetic line of force that for example is arranged on container two pairs of magnetic poles all around not necessarily wants vertical fully, as long as its magnetic line of force is incomplete parallel with metallic carbon nanotubes, and experimental results show that just the magnetic line of force that approaches two pairs of vertical magnetic poles is a most preferred embodiment.In addition, the moving direction of magnetic pole 201 and magnetic pole 202 in embodiment up and down, can also be the direction in all around or other spaces, only need to cooperate the magnetic line of force direction that changes between magnetic pole 203 and the magnetic pole 204.Certainly, it is fully vertical that the moving direction of magnetic pole 201 and magnetic pole 202 is also not necessarily wanted, as long as there is certain characteristics of motion to guarantee to make the metallic carbon nanotubes cutting magnetic line.All employings are equal to replacement or equivalent transformation and all technical schemes of forming, all drop within the scope of protection of present invention.
Claims (10)
1. the preparation method of an integrated circuit material is characterized in that: comprises the steps,
A) integrated circuit material that will separate is immersed in the conducting liquid, and the described integrated circuit material that needs to separate is for comprising metallic carbon nanotubes at least, the composite material of semiconductive carbon nano tube;
B) described conducting liquid is poured in the container;
C) around described container two pairs of orthogonal magnetic poles of the magnetic line of force are set, two relative magnetic poles form a magnetic field, and the magnetic line of force of described two pairs of magnetic poles all passes described container;
D) move wherein any a pair of magnetic pole, make described integrated circuit material in described container, be subjected to conversion magnetic field effect and metallic carbon nanotubes is separated with semiconductive carbon nano tube;
E) collect metallic carbon nanotubes and the semiconductive carbon nano tube of separating respectively.
2. the preparation method of integrated circuit material as claimed in claim 1 is characterized in that: the moving direction of any a pair of magnetic pole is for perpendicular to the magnetic line of force that self forms in the described steps d.
3. the preparation method of integrated circuit material as claimed in claim 2 is characterized in that: in the described steps d, when moving wherein any a pair of magnetic pole, exchange this polarity to magnetic pole, perhaps exchange another polarity to magnetic pole.
4. the preparation method of integrated circuit material as claimed in claim 3 is characterized in that: the moving to moving back and forth of described magnetic pole.
5. the preparation method of integrated circuit material as claimed in claim 1, it is characterized in that: described conducting liquid is electrolyte or the organic solvent that certain electrical conductivity is arranged.
6. the preparation method of integrated circuit material as claimed in claim 1 is characterized in that: the magnetic field that described any a pair of magnetic pole produces is permanent-magnetic field or electromagnetic field, and its intensity is 0.00001-10 tesla.
7. the preparation method of integrated circuit material as claimed in claim 1 is characterized in that: orthogonal magnetic pole more than two pairs is set around the described container.
8. the preparation facilities of an integrated circuit material, it is characterized in that: comprise a container, described container comprises an inlet, and first outlet separated by a distance and second outlet, be provided with two pairs of orthogonal magnetic poles of the magnetic line of force around the described container, two relative magnetic poles form a magnetic field, and the magnetic line of force of described two pairs of magnetic poles all passes described container; Wherein a pair of described magnetic pole can move with respect to described container arbitrarily.
9. the multistage preparation facilities of an integrated circuit material is characterized in that: be formed by connecting continuously in order by at least two described preparation facilities of claim 8, the inlet that is connected in the next stage preparation facilities is aimed in first outlet of upper level preparation facilities.
10. the multistage preparation facilities of integrated circuit material as claimed in claim 9, it is characterized in that: described first outlet is used for collection semiconductor CNT or metallic carbon nanotubes, and correspondingly described second outlet is used to collect metallic carbon nanotubes or semiconductive carbon nano tube.
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| CN200910181989XA CN101624176B (en) | 2009-07-29 | 2009-07-29 | Method and apparatus for manufacturing integrated circuit material |
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| CN200910181989XA CN101624176B (en) | 2009-07-29 | 2009-07-29 | Method and apparatus for manufacturing integrated circuit material |
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| CN101624176B true CN101624176B (en) | 2011-10-05 |
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| CN102320592A (en) * | 2011-08-26 | 2012-01-18 | 复旦大学 | Method for separating carbon nanotubes with different conductive performances |
| CN106782774A (en) * | 2017-01-10 | 2017-05-31 | 京东方科技集团股份有限公司 | Transparent conductive film, its preparation method and device |
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Effective date of registration: 20171027 Address after: Fengxian County 221700 Jiangsu city of Xuzhou province by the way of a South East Beiyuan Road northbound Patentee after: Xuzhou Shijin Electromechanical Technology Co. Ltd. Address before: Xinghu Street Industrial Park of Suzhou city in Jiangsu province 215021 No. 218 nano technology park C1 group B building 201 room Patentee before: Suzhou Dongwei Semiconductor Co., Ltd. |
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