CN101620992A - Growing method of semiconductor substrate - Google Patents
Growing method of semiconductor substrate Download PDFInfo
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- CN101620992A CN101620992A CN200910055732A CN200910055732A CN101620992A CN 101620992 A CN101620992 A CN 101620992A CN 200910055732 A CN200910055732 A CN 200910055732A CN 200910055732 A CN200910055732 A CN 200910055732A CN 101620992 A CN101620992 A CN 101620992A
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Abstract
The invention relates to a growing method of a semiconductor substrate, which comprises the following steps: providing a support substrate; providing a first reacting gas containing an III family element and a halogen family element; providing a second reacting gas containing a rare-earth element and a halogen family element; providing a third reacting gas containing a V family element; mixing the first reacting gas, the second reacting gas and the third reacting gas; heating the support substrate and leading the mixed gas to pass through the surface of the heated support substrate, thereby forming a semiconductor layer, wherein the thickness of the semiconductor layer is not small than 20 microns. Because the three gases are premixed before growth, III family atoms and rare-earth element atoms can be fully diffused, and the rare-earth element atoms are uniformly distributed in the semiconductor layer. The adopted III family reacting gases containing the halogen family element can improve the concentration of the III family element in the reacting gases so as to improve the depositing speed of the semiconductor layer and further achieve high growing speed.
Description
[technical field]
The present invention relates to technical field of semiconductors, relate in particular to a kind of growing method of Semiconductor substrate.
[background technology]
Energy-saving and emission-reduction are very important problems that face in the development of present China.Adopt light source efficiently, for example semiconductor light sources etc. replaces traditional incandescent lamp as lighting source, can save a large amount of electric energy.
Growth is used to make the Semiconductor substrate of semiconductor light sources such as LED, is the element task of field of semiconductor illumination.The common Semiconductor substrate that is used for semiconductor lighting comprises GaAs, GaN and ZnO etc.Discover, in the growth course of Semiconductor substrate, mix rare earth element or other similar elements, can in being with of substrate, introduce the transition energy level, make substrate can under endergonic situation, give off the light wave of different wave length, thereby provide a kind of possibility for forming white light source.For example in III group-III nitride substrates such as GaN or AlN, add rare earth element, especially lanthanide series, promptly can achieve the above object.
Because the effect of above-mentioned substrate is under the exciting of particular energy, inspire the light wave of different wave length according to the difference of institute's doped chemical, so the uniformity that improves the thickness of substrate and doping will help bringing into play the effect of this kind substrate.
[summary of the invention]
Technical problem to be solved by this invention is, a kind of growing method of Semiconductor substrate is provided, can realizes the even doping of substrate middle rare earth element, thereby guarantee that the light wave that ejects is equally distributed from semiconductor layer, obtain visual effect preferably, can satisfy the application of white light LEDs.
In order to address the above problem, the invention provides a kind of growing method of Semiconductor substrate, comprise the steps: to provide support substrate; First reacting gas is provided, contains III family element and halogen in described first reacting gas; Second reacting gas is provided, contains rare earth element and halogen in described second reacting gas; The 3rd reacting gas is provided, contains V group element in described the 3rd reacting gas; First, second and the 3rd reacting gas are mixed mutually; Heat support substrates and mixed gas is passed through the heated support substrate surface, thereby form the semiconductor layer that constitutes by III family and V group element on the support substrates surface, described semiconductor layer doped has rare earth element, and the thickness of described semiconductor layer is not less than 20 microns.
As optional technical scheme, described rare earth element is selected from one or more among Er, Eu, Pr, Tm, Ce, Nd, Sm, Gd, Pm, Gd, Tb, Dy, Ho, Yb and the Lu.
As optional technical scheme, described III family element is selected from one or more among Ga, Al and the In, and described V group element is selected from one or more among N, P and the As, and described halogen is selected from one or both in chlorine and the bromine.
As optional technical scheme, the thickness of described semiconductor layer is not less than 80 microns, and under this thickness situation, the growing method of described Semiconductor substrate further comprises the step of removing support substrates.
As optional technical scheme, in the described mixed gas, the molecule number proportion of V group element and III family element is 1 to 1000.
As optional technical scheme, the material of described support substrates is selected from a kind of of sapphire, Si and lithium aluminate.
As optional technical scheme, in the step of described heating support substrates, the temperature range of heating is 500 to 1200 ℃
The invention has the advantages that, three kinds of gases were pre-mixed before growth, can make the atom fully diffusion mutually of III family atom and rare earth element, because the stream condition difference of gas with various, and cause the uneven distribution of atom in semiconductor layer of rare earth element when avoiding directly feeding the support substrates surface.Because the intensity of the light wave that semiconductor layer gives off under the condition that is excited is directly proportional with the concentration of rare earth element, therefore rare earth element equally distributed advantage in semiconductor layer is to guarantee that the light wave that ejects is equally distributed from semiconductor layer, therefore can obtain visual effect preferably.And adopt the III family reacting gas that contains halogen can improve the concentration of III family element in reacting gas, thereby the deposition velocity of accelerated semiconductor layer, so fast growth, obtain to have certain thickness backing material easily in the short period of time, thick substrate is more suitable for as the optical excitation layer.
[description of drawings]
It shown in the accompanying drawing 1 the implementation step schematic diagram of embodiment of the present invention;
Accompanying drawing 2 to accompanying drawing 4 is the process schematic representation of embodiment of the present invention.
[embodiment]
Elaborate below in conjunction with the embodiment of accompanying drawing to the growing method of a kind of Semiconductor substrate provided by the invention.
Be the implementation step schematic diagram of embodiment of the present invention shown in the accompanying drawing 1, comprise the steps: step S100, provide support substrate; Step S101 provides first reacting gas, contains III family element and halogen in described first reacting gas; Step S102 provides second reacting gas, contains rare earth element and halogen in described second reacting gas; Step S103 provides the 3rd reacting gas, contains V group element in described the 3rd reacting gas; Step S110 mixes first, second and the 3rd reacting gas mutually; Step S120 heats support substrates and mixed gas is passed through the heated support substrate surface; Step S130 removes support substrates.
In this embodiment, described III family element is Ga, and described V group element is N, and described halogen is a chlorine.The GaN material is the present common backing material that is used for semiconductor lighting.In other embodiment, also can be materials such as growth GaAs, InP, in these embodiments, should select for use other corresponding elements as III family and V group element.Adopt the III family reacting gas that contains halogen to carry out epitaxial growth in this embodiment, its advantage is the fast growth of this technology, obtain to have certain thickness backing material easily in the short period of time, thick substrate is more suitable for as the optical excitation layer.
Accompanying drawing 2 to accompanying drawing 4 is the process schematic representation of this embodiment.
Shown in the accompanying drawing 2, refer step S100 provides support substrate 100.
What this embodiment was grown is the GaN substrate, and therefore described support substrates 100 is a sapphire.Other semi-conducting materials such as GaAs or InP etc. if grow also can select other support substrates 100 according to actual conditions, and for example grown InP just can be selected the material of GaAs support substrates 100 for use.Certainly, also can select monocrystalline substrate as support substrates 100, its advantage is with low cost and removes easily after growth finishes.
Refer step S101 to 103, first, second and the 3rd reacting gas are provided, contain III family element and halogen in described first reacting gas, contain rare earth element and halogen in described second reacting gas, contain V group element in described the 3rd reacting gas.
As previously mentioned, in this embodiment, contain Ga and Cl in first reacting gas, contain rare earth element and Cl in second reacting gas, contain N in the 3rd reacting gas.Specifically, first reacting gas is the mist of HCl and GaCl, and second reacting gas is the mist of rare earth element chloride and HCl, and the 3rd reacting gas is NH
3Described rare earth element is selected from one or more among Er, Eu, Pr, Tm, Ce, Nd, Sm, Gd, Pm, Gd, Tb, Dy, Ho, Yb and the Lu, and is preferably among Er, Eu and the Tm one or more.
In the described mixed gas, the molecule number proportion of V group element and III family element is 1 to 1000.
Employing contains halogen gas and is to quicken III family element and the V group element reaction speed on support substrates 100 surfaces as the advantage of reacting gas, so fast growth, obtain to have certain thickness backing material easily in the short period of time, thick substrate is more suitable for as the optical excitation layer.
Refer step S110 mixes first, second and the 3rd reacting gas mutually.
At first mixed before gas feeds support substrates 100 surfaces in this embodiment, in practical operation, this blend step can be realized by a mixing chamber is set in growth apparatus.
Shown in the accompanying drawing 3, refer step S120 heats support substrates 100 and mixed gas is passed through heated support substrate 100 surfaces.This step can form on support substrates 100 surface by what III family and V group element reaction formed and be doped with rare earth element semiconductor layer 110.
The temperature range of heating is 500 to 1200 ℃.
Because the purposes of semiconductor layer 110 is the light waves that give off another wavelength under the situation that absorbs the incident light-wave energy, thereby provide a kind of possibility for forming white light source, therefore need semiconductor layer 110 to have certain thickness, the light path long enough of incident light wave energy in semiconductor layer 110, just can fully excite the rare earth element in this semiconductor layer, to obtain enough transformation efficiencies.In this embodiment, the thickness of described semiconductor layer 110 is not less than 20 microns, especially preferably be not less than 80 microns, reason is to work as the thickness of semiconductor layer 110 more than or equal under 80 microns the situation, can in subsequent step, remove support substrates 100 and realize self-supporting, and be difficult to realize self-supporting less than 80 microns semiconductor layer, need further to adopt bonding or other process meanses that it is provided support the needs that just can satisfy further application.
Further, when the thickness of semiconductor layer 110 during greater than 300 microns, can also play the technique effect that reduces semiconductor layer 110 dislocation densities, interaction such as mergings takes place and offsets in the dislocation that can make the thickness that its reason is to increase semiconductor layer, thereby has played the technique effect of reduction dislocation density.
Heating helps promoting III family element, V group element and rare earth element to form semiconductor layer 110 in support substrates 100 surface reactions.
And, because three kinds of gases are pre-mixed, can make the atom fully diffusion mutually of Ga atom and rare earth element, because the stream condition difference of gas with various, and cause the uneven distribution of atom in the semiconductor layer that constitutes by the GaN material of rare earth element when avoiding directly feeding support substrates 100 surfaces.Because the intensity of the light wave that semiconductor layer gives off under the condition that is excited is directly proportional with the concentration of rare earth element, therefore rare earth element equally distributed advantage in semiconductor layer is to guarantee that the light wave that ejects is equally distributed from semiconductor layer, therefore can obtain visual effect preferably.
Shown in the accompanying drawing 4, refer step S130 removes support substrates 100.
This step is an optional step.The thickness of semiconductor layer 110 greater than 80 microns situation under substrate can realize self-supporting, therefore can remove support substrates 100.In this embodiment, the material of support substrates 100 is a sapphire, therefore can adopt the method for laser lift-off that support substrates is removed, and obtains the semiconductor layer 110 of thickness greater than 80 microns self-supporting.
In other embodiment, if the material of support substrates 100 is monocrystalline silicon or other foreign substrate, also can adopt suitable selective corrosion solution, adopt wet corrosion technique to be removed.
The above only is a preferred implementation of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (8)
1. the growing method of a Semiconductor substrate is characterized in that, comprises the steps:
Provide support substrate;
First reacting gas is provided, contains III family element and halogen in described first reacting gas;
Second reacting gas is provided, contains rare earth element and halogen in described second reacting gas;
The 3rd reacting gas is provided, contains V group element in described the 3rd reacting gas;
First, second and the 3rd reacting gas are mixed mutually;
Heat support substrates and mixed gas is passed through the heated support substrate surface, thereby form the semiconductor layer that constitutes by III family and V group element on the support substrates surface, described semiconductor layer doped has rare earth element, and the thickness of described semiconductor layer is not less than 20 microns.
2. the growing method of Semiconductor substrate according to claim 1 is characterized in that, described rare earth element is selected from one or more among Er, Eu, Pr, Tm, Ce, Nd, Sm, Gd, Pm, Gd, Tb, Dy, Ho, Yb and the Lu.
3. the growing method of Semiconductor substrate according to claim 1, it is characterized in that, described III family element is selected from one or more among Ga, Al and the In, and described V group element is selected from one or more among N, P and the As, and described halogen is selected from one or both in chlorine and the bromine.
4. according to the growing method of any described Semiconductor substrate of claim 1 to 3, it is characterized in that the thickness of described semiconductor layer is not less than 80 microns.
5. the growing method of Semiconductor substrate according to claim 4 is characterized in that, the growing method of described Semiconductor substrate further comprises the step of removing support substrates.
6. according to the growing method of any described Semiconductor substrate of claim 1 to 3, it is characterized in that in the described mixed gas, the molecule number proportion of V group element and III family element is 1 to 1000.
7. according to the growing method of any described Semiconductor substrate of claim 1 to 3, it is characterized in that the material of described support substrates is selected from a kind of in sapphire, Si and the lithium aluminate.
8. according to the growing method of any described Semiconductor substrate of claim 1 to 3, it is characterized in that in the step of described heating support substrates, the temperature range of heating is 500 to 1200 ℃.
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| CN200910055732A CN101620992A (en) | 2009-07-31 | 2009-07-31 | Growing method of semiconductor substrate |
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| CN200910055732A CN101620992A (en) | 2009-07-31 | 2009-07-31 | Growing method of semiconductor substrate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114975645A (en) * | 2022-05-14 | 2022-08-30 | 南京大学 | Rare earth doped III-V semiconductor structure and photoelectric detector structure thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114975645A (en) * | 2022-05-14 | 2022-08-30 | 南京大学 | Rare earth doped III-V semiconductor structure and photoelectric detector structure thereof |
| CN114975645B (en) * | 2022-05-14 | 2024-03-19 | 南京大学 | Rare earth doped III-V semiconductor structure and photoelectric detector structure thereof |
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Application publication date: 20100106 |