CN101609831A - 发光二极管 - Google Patents

发光二极管 Download PDF

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Publication number
CN101609831A
CN101609831A CNA2008100679411A CN200810067941A CN101609831A CN 101609831 A CN101609831 A CN 101609831A CN A2008100679411 A CNA2008100679411 A CN A2008100679411A CN 200810067941 A CN200810067941 A CN 200810067941A CN 101609831 A CN101609831 A CN 101609831A
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China
Prior art keywords
light
penetrating object
emitting diode
light penetrating
pothole
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张家寿
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Hong Jun Precision Industry Co ltd
Fuzhun Precision Industry Shenzhen Co Ltd
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Hong Jun Precision Industry Co ltd
Fuzhun Precision Industry Shenzhen Co Ltd
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Priority to CNA2008100679411A priority Critical patent/CN101609831A/zh
Priority to US12/422,295 priority patent/US20090316399A1/en
Publication of CN101609831A publication Critical patent/CN101609831A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

一种发光二极管，包括壳体、发光芯片阵列以及第一透光体，所述第一透光体将所述发光芯片阵列封装至所述壳体内，所述第一透光体的上方设有一第二透光体，第二透光体具有一入光面，该入光面上设有与发光芯片阵列对应的凹洞阵列。

Description

发光二极管
技术领域
本发明涉及一种光学元件，特别是一种发光二极管。
背景技术
传统的发光二极管一般包括基座、发光芯片以及将发光芯片封装至基座内的封装体，上述发光二极管中，基座的侧壁为一高反射性的斜面，以将发光芯片发出的光线反射向封装体的顶面，然而，由于封装体的顶面一般为光滑的平面，会有部分光线被全反射至封装体的内部而被吸收，降低了上述发光二极管的出光率。
发明内容
有鉴于此，有必要提供一种具较高出光率的发光二极管。
一种发光二极管，包括壳体、发光芯片阵列以及第一透光体，所述第一透光体将所述发光芯片阵列封装至所述壳体内，所述第一透光体的上方设有一第二透光体，第二透光体具有一入光面，该入光面上设有与发光芯片阵列对应的凹洞阵列。
上述发光二极管中，所述凹洞阵列的设置可减小射向第二透光体的光线的入射角，从而可使更多的光线由凹洞阵列处射进第二透光体内，提高发光二极管的光取出率。
下面参照附图，结合实施例对本发明作进一步描述。
附图说明
图1为本发明发光二极管的一个较佳实施方式的轴向剖视图。
图2为图1中发光二极管的分解示意图。
图3为图2中第二透光体的轴向剖视图。
具体实施方式
请参阅图1及图2，本发明的该实施例所示的发光二极管包括一壳体12、一发光芯片阵列14、以及第一透光体16和第二透光体18。
所述壳体12为倒圆锥台状，其具有一圆形的横截面，和大致呈倒梯形的轴截面。所述壳体12的横截面的直径由壳体12的底部向顶部逐渐增加。所述壳体12的侧面具有较高的反射率，以将射向壳体12侧面的光线反射向壳体12的顶部。
所述发光芯片阵列14包括若干个发光二极管芯片。这些发光二极管芯片设于壳体12的底部，与壳体12直接接触，并通过金线143与壳体12的底部电连接。
所述第一透光体16位于壳体12的底部，将所述发光二极管芯片固定至壳体12上。本实施例中，第一透光体16为填充于壳体12底部内的封装体，该封装体由填充于壳体12底部的环氧树脂、硅树脂等透光材料经冷却后形成。该第一透光体16的轴截面呈倒梯形，其顶面为一平面，其侧面与壳体12的侧面紧密接触。
请一并参图3，所述第二透光体18设于第一透光体16的上方而对应设置在壳体12的顶部。该第二透光体18大致呈倒圆锥台状，具有一平面状的入光面181，以及一轴截面为凸弧状的出光面183。该入光面181位于第二透光体18的底端，且它的一部分与第一透光体16的顶面相接触，而该出光面183则位于第二透光体18的顶端，与入光面181相对。该第二透光体18由环氧树脂、硅树脂等透光材料制成，其折射率小于第一透光体16的折射率，且大于空气的折射率。并且，该第二透光体18的软化温度大于第一透光体16的软化温度，该第二透光体18与第一透光体16之间是通过将第二透光体18置于已填充有第一透光体16的壳体12内，加热温度至第一透光体16的软化点以上，最后降温使第二透光体18与第一透光体16紧密黏合在一起。
该第二透光体18的入光面181上设有一凹洞阵列185，该凹洞阵列185包括若干个轴截面大致呈弧形的凹洞，上述发光二极管芯片位于凹洞的正下方，与所述凹洞一一对应。所述凹洞的壁部为凹凸不平的结构，使凹洞的壁部形成为粗糙的表面，从而使更多的光线可由凹洞的壁部射进第二透光体18内，提高发光二极管的光取出率。
本实施例所述的发光二极管中，凹洞的壁部为粗糙的表面，可使更多的光线较为发散地由凹洞的壁部射进第二透光体18内部，提高发光二极管的光取出率，另外，通过轴截面为凸弧状的出光面183，适当会聚由第二透光体18设出的光线，使得进入第二透光体18的较为发散的光线可相对集中地由第二透光体18射出，确保该发光二极管在具有较低炫光效果的同时，其发出的光线可射向较远的距离。
另外，出光面183的凸弧状设计可减小出光面183处大部分光线的入射角，削弱了出光面183处的全反射现象，提高了发光二极管的光取出率。
进一步地，该发光二极管中，通过在第一透光体16和空气间设置折射率介于第一透光体16和空气的第二透光体18，削弱了光线由第一透光体16直接射进空气时产生的全反射现象，进一步提高了发光二极管的光取出率。

Claims (12)

1.一种发光二极管，包括壳体、发光芯片阵列以及第一透光体，所述第一透光体将所述发光芯片阵列封装至所述壳体内，其特征在于：所述第一透光体的上方设有一第二透光体，第二透光体具有一入光面，该入光面上设有与发光芯片阵列对应的凹洞阵列。
2.如权利要求1所述的发光二极管，其特征在于：所述凹洞阵列的各凹洞与发光芯片阵列的各发光二极管芯片一一对应。
3.如权利要求2所述的发光二极管，其特征在于：所述发光芯片阵列的各发光二极管芯片位于凹洞阵列的各凹洞的正下方。
4.如权利要求1所述的发光二极管，其特征在于：所述凹洞阵列的各凹洞的轴截面为弧形。
5.如权利要求1所述的发光二极管，其特征在于：所述凹洞阵列的各凹洞的壁部为粗糙的表面。
6.如权利要求1所述的发光二极管，其特征在于：所述第二透光体具有一出光面，所述出光面的轴截面为凸弧状。
7.如权利要求1所述的发光二极管，其特征在于：所述第二透光体的折射率小于第一透光体的折射率，且大于空气的折射率。
8.如权利要求1所述的发光二极管，其特征在于：所述第二透光体的入光面位于第二透光体的底端，且与第一透光体的顶面相接触。
9.如权利要求1所述的发光二极管，其特征在于：所述第二透光体的软化温度大于第一透光体的软化温度。
10.如权利要求1所述的发光二极管，其特征在于：所述壳体为倒圆锥台状，其具有一圆形的横截面和倒梯形的轴截面。
11.如权利要求1所述的发光二极管，其特征在于：所述第一透光体设在壳体的底部，所述第二透光体设在壳体的顶部。
12.如权利要求1所述的发光二极管，其特征在于：所述第一透光体的轴截面为倒梯形，其顶面为一平面，所述第二透光体的入光面位于第二透光体的底端，该入光面为平面且与第一透光体的顶面结合，该第二透光体的顶端形成一出光面，该出光面的轴截面呈凸弧状。
CNA2008100679411A 2008-06-20 2008-06-20 发光二极管 Pending CN101609831A (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CNA2008100679411A CN101609831A (zh) 2008-06-20 2008-06-20 发光二极管
US12/422,295 US20090316399A1 (en) 2008-06-20 2009-04-13 Light emitting diode

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Application Number Priority Date Filing Date Title
CNA2008100679411A CN101609831A (zh) 2008-06-20 2008-06-20 发光二极管

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Publication number Priority date Publication date Assignee Title
US8384097B2 (en) 2009-04-08 2013-02-26 Ledengin, Inc. Package for multiple light emitting diodes
JP6563495B2 (ja) 2014-11-26 2019-08-21 エルイーディエンジン・インコーポレーテッド 穏やかな調光及び色調整可能なランプ用のコンパクトなｌｅｄエミッタ
US10575374B2 (en) 2018-03-09 2020-02-25 Ledengin, Inc. Package for flip-chip LEDs with close spacing of LED chips
WO2024036151A1 (en) * 2022-08-11 2024-02-15 Creeled, Inc. Solid state light emitting components

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TW200502640A (en) * 2003-07-02 2005-01-16 Au Optronics Corp Back light module
JP4937845B2 (ja) * 2006-08-03 2012-05-23 日立マクセル株式会社 照明装置および表示装置
JP5028562B2 (ja) * 2006-12-11 2012-09-19 株式会社ジャパンディスプレイイースト 照明装置及びこの照明装置を用いた表示装置

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Open date: 20091223