CN101603991B - Electric field detector based on CMOS6 NOT gate - Google Patents
Electric field detector based on CMOS6 NOT gate Download PDFInfo
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Abstract
The invention discloses an electric field detector based on a CMOS6 NOT gate, which comprises an electrostatic detector and an audio electric field detector. The electrostatic detector and the audio electric field detector detect a first NOT gate of a CMOS6 NOT gate integrated circuit as an electric field, and the rest five NOT gates are inverting amplifiers with stable neutral-point potential; and an input end of the first NOT gate is connected with a probe. A second NOT gate of the electrostatic detector is used for pre-amplification, a third NOT gate and a fourth NOT gate of the electrostatic detector are connected in parallel and used as output drive, and a fifth NOT gate and a sixth NOT gate of the electrostatic detector are connected in parallel and matched with resistors with the same resistance value to form a phase inverter of which gain is 1; a second NOT gate, a third NOT gate and a fourth NOT gate of the audio electric field detector form an inverting amplifier of which gain is infinite, are matched with a fourth resistance negative feedback stabilizing DC working point, and simultaneously form a band-pass amplifier with a second capacitor and a third capacitor together; and a fifth NOT gate and a sixth NOT gate of the audio electric field detector are connected in parallel and output audio current to an earphone for diagnosing during detection through a stopping electrolytic capacitor. The electric field detector can be used for detecting sunken cords and seepage, and has the advantages of low voltage, low power consumption and small volume.
Description
Technical field
The present invention relates to electric field detector, particularly the integrated amplifier electronic circuit to sunken cord, the detection of seepage.
Background technology
The forceful electric power light current that the modern be unable to do without a moment comes from the discovery of static at first, yet it is with rapid changepl. never-ending changes and improvements even to this day the Application and Development of static but not to be resembled power electronics industry.Although we have the static activity by the side of everywhere: wear rubber overshoes or walking on the insulation floor, pick up the Transparent plastic pack box, with insulant friction or the like, we have only run into metal object fiber crops electricity or turn off the light winter and see that a some Mars knows that just static is arranged when taking off chemical fibre class clothes at hand.This be because we do not have to be simple and easy in the daily life the electrostatic detection instrument.Professional domain detects static or electric field uses very complicated apparatus, such as the frivolous sheet metal electroscope of V-arrangement, electrooptical effect, electrostrictive effect etc.One class what is called " electric field image device " IC (ElectricField Imaging Device:MC33794, MC33941, MC34940) appearred after 2000, be have many uses carry out the mainstream chip of non-contact object position sensing based on electric field.But in fact it is not direct detection electric field, but detects the electric capacity relevant with electric field, therefore with maximum several centimetres of the spacing distance of checking matter; And power supply is 12V, and pin can only be used for dedicated system more than 24.In other words, still lack the components and parts or the IC of some small sizes, Low-voltage Low-power so far, special use comes the pocket instrument or the device of flexible design structure based on static or electric field, finds or utilize ubiquitous static or electric field at one's side.
Summary of the invention
Technical matters to be solved by this invention provides the electric field detector of a kind of low-voltage based on CMOS 6 not gates, low-power consumption, small size.
The inventor finds that it has the peculiar phenomenon of remote perception human motion when the research and development ecg amplifier.Further after the test analysis, understood fully that its principle is because ecg amplifier has higher input impedance, and the human body of motion can produce a large amount of static because of friction on insulated shoes or the floor wearing, these electrostatic energies are sensed by the ecg amplifier of high input impedance.Expected thus availablely having high input impedance MOS field effect device and making the electrostatic detection sensor.But the input end of general field effect device all will be biased circuit and could work, and has just greatly reduced and added biasing circuit input impedance.
Screening after tested find that the input end open circuit of CMOS 6 ungated integrated circuits can be operated in the linear amplification state, and output terminal autostable is at midpoint potential.
CMOS not gate input end open circuit, input impedance are almost infinitely great, and also have linear reverse voltage enlarging function, detect as electric field, and be satisfactory for result.Removing one in 6 not gates does outside the electric field detection, five remaining not gates all are the stable inverting amplifiers of midpoint potential, these five not gates are equivalent to the amplifier that in-phase input end has connect midpoint potential, can make various flexible design, comprise constituting well behaved frequency-selecting amplifier or instrument indication driving circuit.So the present invention has just been arranged: based on the electric field detector of CMOS 6 not gates, it has comprised the detection from the electrostatic field to the AC field, and is low-voltage, little power consumption, small size.The present invention can be used for following practical field at least:
(1) electrostatic detector based on CMOS 6 not gates of the present invention can be used for monitoring human whether near a path that long lead constituted (being used for warning or record) or realize responding that the people significantly waves or the intelligent toy of step in 2 meters scopes.
(2) the audio frequency electric field detector based on CMOS 6 not gates of the present invention can be used for spacing from the conducting medium detection, comprises that sunken cord in the house, pipe leakage is surveyed.
Utilize the CMOS not gate can detect the characteristic of electric field at a distance, the present invention solves the technical scheme that above technical matters takes and is:
The electrostatic detector that the present invention is based on CMOS 6 not gates mainly comprises probe, first not gate, second not gate, the 3rd not gate, the 4th not gate, the 5th not gate, the 6th not gate, first resistance, second resistance, the 3rd resistance, potentiometer and indicating gauge, wherein, probe is connected with the input end of first not gate, the output terminal of first not gate is connected with the input end of second not gate, the 3rd not gate formation first parallel circuit in parallel with the 4th not gate, the 5th not gate, the 6th not gate and second resistance second parallel circuit that forms in parallel, the output terminal of second not gate is connected with the input end of described first parallel circuit, the output terminal of first parallel circuit is connected with an end of first resistance, the other end of first resistance is connected with the input end of second parallel circuit, the two ends of the 3rd resistance are connected with the input end of second not gate and the output terminal of second parallel circuit respectively, the output terminal of the output terminal of first parallel circuit and second parallel circuit is connected with the indicating gauge two ends respectively, and the sliding point of potentiometer is connected with the input end of first parallel circuit.
Further, the electrostatic detector based on CMOS 6 not gates of the present invention also comprises first electric capacity, and described first electric capacity is in parallel with first parallel circuit.
The audio frequency electric field detector that the present invention is based on CMOS 6 not gates mainly comprises probe, first not gate, second not gate, the 3rd not gate, the 4th not gate, the 5th not gate, the 6th not gate, the 4th resistance, second electric capacity, the 3rd electric capacity, electrochemical capacitor and earphone, wherein, probe is connected with the input end of first not gate, first not gate, second electric capacity, second not gate, the 3rd not gate and the 4th not gate are connected successively, the output terminal of the input end of second not gate and the 4th not gate is connected with the two ends of the 4th resistance respectively, the two ends of the 3rd electric capacity are connected with the output terminal of first not gate and the output terminal of the 4th not gate respectively, the 5th not gate formation the 3rd parallel circuit in parallel with the 6th not gate, the output terminal of the 4th not gate is connected with the input end of the 3rd parallel circuit, the output terminal of the 3rd parallel circuit, electrochemical capacitor and earphone are connected successively.
Further, the audio frequency electric field detector that the present invention is based on CMOS 6 not gates also comprises the 5th resistance and the 4th electric capacity, and is wherein, in parallel with the 3rd not gate again after the 5th resistance and the 4th capacitances in series.
Compared with prior art, advantage of the present invention is: (1) CMOS not gate input end open circuit is used, and input impedance is almost infinitely great, and doing the electrostatic field detection has wholesomeness; (2) the present invention enlightened a kind of static or electric field application can flexible design the universal integrated circuit of the little power consumption small size of low-voltage; (3) CMOS 6 ungated integrated circuits are just available less than 1 yuan, just can obtain electric field detector of the present invention through simply and cleverly designing, and cost extremely hangs down but to have very widely to be used, and is specially adapted to the small serial production of detecting instrument class; (4) two electric field detectors that the present invention is based on CMOS 6 not gates have all only just been realized complete instrument with a slice CMOS 6 ungated integrated circuits, so power consumption is little, operating voltage can be low to moderate 3.7V (Li-Ion rechargeable battery voltage) even 2.4V (the common charged battery voltage of two joints), is specially adapted to use in the pocket detecting instrument of powered battery class.
Description of drawings
Fig. 1 is the circuit diagram that the present invention is based on the electrostatic detector of CMOS 6 not gates;
Fig. 2 is the circuit diagram that the present invention is based on the audio frequency electric field detector of CMOS 6 not gates;
Fig. 3 is to use audio frequency electric field detector of the present invention to do to need supporting audio-frequency electric field emission source to reach when conducting medium is surveyed and be detected the synoptic diagram that medium is connected.
Embodiment
The present invention is based on the electric field detector of CMOS 6 not gates, comprise electrostatic detector and audio frequency electric field detector.
The model commonly used of CMOS 6 not gates is CD4069.
The electrostatic detector circuit diagram that Fig. 1 is made of CMOS 6 not gates for the present invention.Wherein A1-A6 is 6 CMOS not gates, i.e. first not gate to the, six not gates.
Electrostatic detector based on CMOS 6 not gates mainly comprises probe, the first not gate A1, the second not gate A2, the 3rd not gate A3, the 4th not gate A4, the 5th not gate A5, the 6th not gate A6, first resistance R 1, second resistance R 2, the 3rd resistance R 3, potentiometer P and indicating gauge DC.V, probe is connected with the input end of the first not gate A1, the output terminal of the first not gate A1 is connected with the input end of the second not gate A2, the 3rd not gate A3 formation first parallel circuit in parallel with the 4th not gate A4, the 5th not gate A5, the 6th not gate A6 and second resistance R, 2 second parallel circuits that form in parallel, the output terminal of the second not gate A2 is connected with the input end of first parallel circuit, the output terminal of first parallel circuit is connected with an end of first resistance R 1, the other end of first resistance R 1 is connected with the input end of second parallel circuit, the two ends of the 3rd resistance R 3 are connected with the input end of the second not gate A2 and the output terminal of second parallel circuit respectively, the output terminal of the output terminal of first parallel circuit and second parallel circuit is connected with indicating gauge DC.V two ends respectively, and the sliding point of potentiometer P is connected with the input end of first parallel circuit.
The first not gate A1 is used for the electrostatic field sensing; The second not gate A2 is used for preposition amplification.The 3rd not gate A3, the 4th not gate A4 do output in parallel drives; The 5th not gate A5, the 6th not gate A6 are in parallel and mix the identical resistance R of resistance 1, R2 to constitute gain be 1 phase inverter, and does output in parallel with the 3rd not gate A3, the 4th not gate A4 forms bridge-type and exports driving.In fact to the gauge outfit of full scale electric current below 1mA, the 4th not gate A4, the 6th not gate A6 need not be good.The second not gate A2, the 3rd not gate A3, this road integral body of the 5th not gate A5 are great inverting amplifiers of gain, must have negative feedback resistor R3 to adjust the numerical value that gains to actual needs, and make the entire circuit steady operation.Potentiometer P be used for adjusting be output as when making no electrostatic field zero.
Be anti-high frequency interference, it is in parallel with first parallel circuit to increase by first capacitor C, 1, the first capacitor C 1 in electrostatic detector of the present invention.Can not add first capacitor C 1 during no high frequency interference.
The input termination probe of the first not gate A1 is used for electrostatic field and surveys; Or connect a long lead and be used for the monitoring of moving human body or static electrification thing.It should be noted that, the metal of static electrification often has high pressure, if probe is directly run into the metal CMOS chip of can breaking, therefore can add holding circuit and be broken to avoid the CMOS chip, promptly the input end of the first not gate A1 adds two reverse protection diodes (not illustrating in the drawings); Or the protective resistance of connecting is not to unsettled probe (illustrating in the drawings).
The circuit diagram of the audio frequency electric field detector that Fig. 2 is made of CMOS 6 not gates for the present invention.Wherein A1-A6 is 6 CMOS not gates, i.e. first not gate to the, six not gates.
The audio frequency electric field detector of CMOS 6 not gates of the present invention mainly comprises probe, the first not gate A1, the second not gate A2, the 3rd not gate A3, the 4th not gate A4, the 5th not gate A5, the 6th not gate A6, the 4th resistance R 4, second capacitor C 2, the 3rd capacitor C 3, electrochemical capacitor Cp and earphone Bp, probe is connected with the input end of the first not gate A1, the first not gate A1, second capacitor C 2, the second not gate A2, the 3rd not gate A3 and the 4th not gate A4 connect successively, the output terminal of the input end of the second not gate A2 and the 4th not gate A4 is connected with the two ends of the 4th resistance R 4 respectively, the two ends of the 3rd capacitor C 3 are connected with the output terminal of the first not gate A1 and the output terminal of the 4th not gate A4 respectively, the 5th not gate A5 formation the 3rd parallel circuit in parallel with the 6th not gate A6, the output terminal of the 4th not gate A4 is connected with the input end of the 3rd parallel circuit, the output terminal of the 3rd parallel circuit, electrochemical capacitor Cp and earphone Bp connect successively.
The first not gate A1 is used for electric field sensing; The infinite inverting amplifier of gain on the constitution theory is amplified in the second not gate A2, the 3rd not gate A3, three amplifier cascades of the 4th not gate A4, mix the 4th resistance R 4 negative feedback stable DC working points, constitute bandpass amplifier with second capacitor C 2, the 3rd capacitor C 3 simultaneously, the amplifier that the frequency-selecting function is promptly arranged, it can realize faint sound signal is elected from noisy environment.The 5th not gate A5, the 6th not gate A6 are in parallel to be listened through examining when straight electrochemical capacitor Cp exports tone currents earphone to for detection.
The input termination probe of the first not gate A1 is used for electric field detecting.It should be noted that being detected object often has high pressure,, therefore can add holding circuit and be broken that promptly the input end of the first not gate A1 adds two reverse protection diodes (not illustrating in the drawings) to avoid the CMOS chip if probe is directly run into the CMOS chip of can breaking; Or the protective resistance of connecting is not to unsettled probe (illustrating in the drawings).
If require to have when highly sensitive wild effect such as self-sustained oscillation to occur, audio frequency electric field detector of the present invention can add negative feedback for the 3rd not gate A3 to solve with connect with the 4th capacitor C 4 circuit that constitutes of the 5th resistance R 5, promptly the 5th resistance R 5 and 4 series connection of the 4th capacitor C are in parallel with the 3rd not gate A3.
As fully visible, therefore two electric field detectors that the present invention is based on CMOS 6 not gates all only just can be realized the complete function of instrument with a slice CMOS 6 ungated integrated circuits, have that power consumption is little, operating voltage can be low to moderate 3.7V (Li-Ion rechargeable battery voltage) even the characteristics of 2.4V (the common charged battery voltage of two joints).
Fig. 3 is to use audio frequency electric field detector of the present invention to do to need supporting audio-frequency electric field emission source to reach when conducting medium is surveyed and be detected the synoptic diagram that medium is connected.
The audio-frequency electric field emission source is made up of audio signal source 1, power amplifier 2 and 1: 10 step-up transformer T, and audio signal source 1, power amplifier 2 and 1: 10 step-up transformer T are connected in series successively.
Space when conducting medium is surveyed, need one of tested medium 3 is terminated to the output terminal of audio-frequency electric field emission source, make whole tested medium 3 have the audio frequency electric field, and audio frequency electric field detector of the present invention to be exactly special use survey this faint audio frequency electric field.In view of this electric field induction detects is at a certain distance non-contact detecting, therefore audio frequency electric field detector of the present invention is well suited for being used for surveying the nonconductor that high electrical resistance is arranged, Ru Shui, soil, moist cement, timber etc., and the spacing from detection of lead for example are used for the house detection of sunkening cord.
The using method of electric field detector of the present invention is as follows:
(1) about the use of electrostatic detector of the present invention: the instrument probe of electrostatic detector just can be seen that near the object that static is arranged the pointer of indicating gauge DC.V obviously swings; Also instrument can put, it is several following that hand takes the transparent plastic dixie cup to wipe on hair slightly, shakes from side to side near the probe again; Perhaps the people wear near the probe insulated shoes on the floor, wipe several down, wave again and have a try.
(2) about the use of audio frequency electric field detector of the present invention:
Had audio-frequency electric field emission source and audio frequency electric field detector of the present invention just can carry out conducting medium and surveyed, the conducting medium 3 that is detected is seen the dash area among Fig. 3.If what will detect is the electric wire that is embedded in the wall, can cut off the general supply of electric wire to be measured in the wall earlier, by the supply socket that is communicated with electric wire to be measured audio-frequency electric field emission source output terminal is inserted.Need to prove: connecing center line can be more safer; It is very big that the then safety of ground wire but signal are grounded decay.If necessary hot line job, then the audio-frequency electric field emission source is exported one the 0.01 μ F/1KV safety isolation capacitance of must connecting and is inserted socket again.During detection, hand-held audio frequency electric field detector of the present invention, the approaching more electric wire that the audio-frequency electric field signal is arranged of probe, audio sound is loud more.Therefore can seek track with listening along wall and be embedded within the walls electric wire.
If detect pipeline breaking or pond seepage, then metallic water pipe is received in the output of audio-frequency electric field emission source or goed deep in the water by lead, preferably link to each other with the naked metalwork of large tracts of land in the water.
The ground end of audio-frequency electric field emission source and audio frequency electric field detector drags a long line or ground connection better, is particularly suitable for the field and detects at a distance.
Claims (4)
1. electrostatic detector based on CMOS 6 not gates, it is characterized in that: it comprises probe, first not gate, second not gate, the 3rd not gate, the 4th not gate, the 5th not gate, the 6th not gate, first resistance, second resistance, the 3rd resistance, potentiometer and indicating gauge, described probe is connected with the input end of first not gate, the output terminal of first not gate is connected with the input end of second not gate, described the 3rd not gate formation first parallel circuit in parallel with the 4th not gate, described the 5th not gate, the 6th not gate and second resistance second parallel circuit that forms in parallel, the output terminal of described second not gate is connected with the input end of described first parallel circuit, the output terminal of described first parallel circuit is connected with an end of described first resistance, the other end of described first resistance is connected with the input end of described second parallel circuit, the two ends of described the 3rd resistance are connected with the input end of second not gate and the output terminal of second parallel circuit respectively, the output terminal of described first parallel circuit is connected with an end of indicating gauge and the output terminal of second parallel circuit is connected with the other end of indicating gauge, and the sliding point of described potentiometer is connected with the input end of first parallel circuit.
2. the electrostatic detector based on CMOS 6 not gates according to claim 1 it is characterized in that: further comprising first electric capacity, and described first electric capacity is in parallel with first parallel circuit.
3. audio frequency electric field detector based on CMOS 6 not gates, it is characterized in that: it comprises probe, first not gate, second not gate, the 3rd not gate, the 4th not gate, the 5th not gate, the 6th not gate, the 4th resistance, second electric capacity, the 3rd electric capacity, electrochemical capacitor and earphone, described probe is connected with the input end of first not gate, described first not gate, second electric capacity, second not gate, the 3rd not gate and the 4th not gate are connected successively, the output terminal of the input end of described second not gate and the 4th not gate is connected with the two ends of the 4th resistance respectively, the two ends of described the 3rd electric capacity are connected with the output terminal of first not gate and the output terminal of the 4th not gate respectively, described the 5th not gate formation the 3rd parallel circuit in parallel with the 6th not gate, the output terminal of described the 4th not gate is connected with the input end of the 3rd parallel circuit, the output terminal of described the 3rd parallel circuit, electrochemical capacitor and earphone are connected successively.
4. the audio frequency electric field detector based on CMOS 6 not gates according to claim 3 it is characterized in that: further comprising the 5th resistance and the 4th electric capacity, described the 5th resistance and the 4th capacitances in series, and described the 5th resistance, the 4th electric capacity are in parallel with the 3rd not gate.
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| CN2009101007647A CN101603991B (en) | 2009-07-21 | 2009-07-21 | Electric field detector based on CMOS6 NOT gate |
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| CN2009101007647A CN101603991B (en) | 2009-07-21 | 2009-07-21 | Electric field detector based on CMOS6 NOT gate |
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| CN101603991B true CN101603991B (en) | 2011-04-27 |
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