CN101599531A - Memory cell of a kind of resistive random access memory (RRAM) and preparation method thereof - Google Patents
Memory cell of a kind of resistive random access memory (RRAM) and preparation method thereof Download PDFInfo
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- CN101599531A CN101599531A CNA200910100141XA CN200910100141A CN101599531A CN 101599531 A CN101599531 A CN 101599531A CN A200910100141X A CNA200910100141X A CN A200910100141XA CN 200910100141 A CN200910100141 A CN 200910100141A CN 101599531 A CN101599531 A CN 101599531A
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Abstract
The present invention relates to memory cell of a kind of resistive random access memory (RRAM) and preparation method thereof, this memory cell comprises dielectric substrate, insulated substrate surface is provided with first electrode, be provided with on first electrode surface and have the intermediate layer that electric resistance changing characteristic material is made, the surface in intermediate layer is provided with second electrode, it is characterized in that: described intermediate layer is formed by diamond-like carbon film.Compared with prior art, the invention has the advantages that: oxide material is not adopted in the intermediate layer, but employing diamond-like carbon film, the resistive random access memory (RRAM) of this structure shows transformation and the memory characteristic between the excellent high low resistance state under direct voltage continuous sweep excitation, the difference between its high low resistance state can be greater than 10
2Doubly, in the process of continuous 100 high low resistance state circulations, the resistance meter of high low resistance state reveals stability preferably; Set voltage and resetting voltage show good stability; These characteristics show that the present invention has potential using value in non-volatility memorizer spare field.
Description
Technical field
The present invention relates to technical field of non-volatile, relate in particular to memory cell of a kind of resistive random access memory (RRAM) and preparation method thereof.
Background technology
The high-tech develop rapidly of current numeral, to the demands for higher performance of existing information storage products, for example: high-speed, high density, long-life, low cost and low-power consumption etc., also disclosed the existing defective of memory technology at random simultaneously.One of weakness of dynamic memory and static memory is its volatibility: information dropout under the powering-off state, and be subject to electromagnetic interference.Then there are technology barriers such as read or write speed is slow, packing density is low in flash memory.Therefore, press at storage medium and technical elements and make a breakthrough, with the memory technology of Development of New Generation.
Houston, u.s.a university found in this sandwich structure of metal/Ca titanium ore Mn oxide PrCaMnO/ metal in 2000, system resistance was returned fast switch on high low resistance applying electric pulse between two metal electrodes.Subsequently, it is found that at NiO, CuO, ZrO
2, TiO
2Send a telegraph the resistance transition effect etc. also there being similar electricity in the multiple Dyadic transition group metallic oxide.Based on this electric resistance changing effect, people have proposed a kind of novel nonvolatile memory notion-resistive random access memory (RRAM) (RRAM).The memory cell of resistive random access memory (RRAM), generally comprise dielectric substrate, insulated substrate surface is provided with first electrode, be provided with on first electrode surface and have the intermediate layer that electric resistance changing characteristic material is made, the surface in intermediate layer is provided with second electrode, compare with other memory, resistive random access memory (RRAM) (RRAM) has that simple, the erasable speed of preparation is fast, storage density is high, with main advantages such as semiconductor technology is compatible good.
At present, the overwhelming majority all is confined to oxide material about the research in resistive random access memory (RRAM) (RRAM) intermediate layer.It is at present also less as the research of the resistive random access memory (RRAM) (RRAM) in intermediate layer to have an electric resistance changing characteristic material for other.
Summary of the invention
First technical problem to be solved by this invention is to provide a kind of memory cell that does not adopt oxide material as the resistive random access memory (RRAM) in electrode intermediate layer at above-mentioned prior art.
Second technical problem to be solved by this invention provides a kind of preparation method who does not adopt oxide material as the memory cell of the resistive random access memory (RRAM) in electrode intermediate layer.
The present invention solves the technical scheme that above-mentioned first technical problem adopts: the memory cell of this resistive random access memory (RRAM), comprise dielectric substrate, insulated substrate surface is provided with first electrode, be provided with on first electrode surface and have the intermediate layer that electric resistance changing characteristic material is made, the surface in intermediate layer is provided with second electrode, it is characterized in that: described intermediate layer is formed by diamond-like carbon film.
First electrode and second electrode can adopt aluminium or copper or gold or silver or platinum or titanium or tungsten or tantalum or their composition to make.
Above-mentioned intermediate layer can be made by the intrinsic diamond-like carbon film, also can be for being doped with the diamond-like carbon film of chromium, and wherein the atomic percentage conc of chromium in diamond-like carbon film is 0～20%.
The thickness range in above-mentioned intermediate layer is 10nm～200nm.
The present invention solves above-mentioned second technical scheme that technical problem adopted: the preparation method of the memory cell of this resistive random access memory (RRAM) is characterized in that: may further comprise the steps
Step 3, on the diamond-like carbon film surface preparation conductive film as second electrode.
In the described step 2, can adopt the ion beam depositing device to prepare diamond-like carbon film at first electrode surface, the condition of work of ion beam depositing device is: adopting acetylene is the work source of the gas, and the operating power of ion source deposit device is set to 200～224W; Diamond-like carbon film thickness is made as 10nm～200nm.
In the described step 2, also can adopt the CVD (Chemical Vapor Deposition) method of ion beam combined magnetic-controlled sputter to prepare chromium-doped diamond-like carbon film at first electrode surface, the condition of work of ion beam combined magnetic-controlled sputter deposition process is: sputtering target material is high-purity chromium (at least 99.999%), adopt acetylene and argon gas as the work source of the gas, the voltage ratio of acetylene and argon gas is 3: 5～1: 1, ion source power is 200～224W, and sputtering source power is 900～1000W.
In the described step 3, the method that adopts sputter or electron beam evaporation is at diamond-like carbon film surface preparation second electrode, and second electrode adopts the method moulding of mask plate or photoetching.
Can also comprise at last
The method of step 4, employing reactive ion etching or inductively coupled plasma etching is prepared the device architecture of isolation on the acquired architecture basics of step 3.
Compared with prior art, the invention has the advantages that: oxide material is not adopted in the intermediate layer between two electrodes of the memory cell of resistive random access memory (RRAM), but employing diamond-like carbon film, the resistive random access memory (RRAM) of this structure shows transformation and the memory characteristic between the excellent high low resistance state under direct voltage continuous sweep excitation, the difference between its high low resistance state can be greater than 10
2Doubly, in the process of continuous 100 high low resistance state circulations, the resistance meter of high low resistance state reveals stability preferably; Its high-impedance state changes (set) to low resistance state voltage is less than+1V, and low resistance state changes (resetting) to high-impedance state voltage is less than-2V, and in the process of 100 high low resistance state circulations, set voltage and resetting voltage show good stability; These characteristics show that the present invention has potential using value in non-volatility memorizer spare field.
Description of drawings
Fig. 1 is the structural representation of the memory cell of resistive random access memory (RRAM) in the embodiment of the invention;
Fig. 2 is the bipolar I-V characteristic test result of resistive random access memory (RRAM) memory cell in the embodiment of the invention;
Fig. 3 reads resistance value under the voltage with the variation relation of erase-write cycles for resistive random access memory (RRAM) memory cell in the embodiment of the invention at 0.1V;
The resistive random access memory (RRAM) memory cell is at set voltage and the resetting voltage variation relation with erase-write cycles in Fig. 4 embodiment of the invention.
Embodiment
Embodiment describes in further detail the present invention below in conjunction with accompanying drawing.
The memory cell of resistive random access memory (RRAM) as shown in Figure 1, comprise dielectric substrate, dielectric substrate is made up of monocrystalline silicon and the silicon dioxide spacer medium layer that is grown in monocrystalline silicon surface, on the silicon dioxide spacer medium layer first electrode is set, first electrode is made up of thick platinum of 200nm and the thick titanium of 50nm; The intermediate layer of chromium-doped diamond-like carbon film is set on first electrode surface, the atomic percentage conc of chromium in diamond-like carbon film is 1.3%, intermediate layer thickness is 130nm, and the surface in intermediate layer is provided with second electrode that copper becomes, and second thickness of electrode is 200nm.
The preparation method of the memory cell of above-mentioned resistive random access memory (RRAM) is:
The method of the vapour deposition of step 3, employing ion beam combined magnetic-controlled sputter prepares chromium-doped diamond-like carbon film at first electrode surface, the condition of work of ion beam combined magnetic-controlled sputter deposition process is: adopting acetylene and argon gas is working gas, the voltage ratio of acetylene and argon gas is 33: 47, the ion source power setting is 224W, sputter uses chromium as target, and sputtering source power is 900W; The thickness of chromium-doped diamond-like carbon film is made as 130nm;
The method of step 5, employing reactive ion etching or inductively coupled plasma etching is prepared the device architecture of isolation on the acquired architecture basics of step 4.
With reference to figure 2, Fig. 3, Fig. 4, utilize the analyzing parameters of semiconductor tester to test the memory cell current-voltage characteristic of the resistive random access memory (RRAM) that said method makes.Under voltage continuous sweep pattern, tested the I-E characteristic of the memory cell of this resistive random access memory (RRAM).Scan bias voltage is added on second electrode and first electrode.The I-E characteristic test result is seen Fig. 2.Voltage is for the first time when 0V begins to scan, the memory cell of this resistive random access memory (RRAM) shows the high resistant characteristic, when voltage be higher than+memory cell of resistive random access memory (RRAM) changes low resistance state suddenly into during 13.2V, this is an electric forming process, need to set a current limitation value (being 50mA in this example) this moment, in order to avoid the memory cell of the excessive damage resistive random access memory (RRAM) of electric current, when voltage again from+when 13.2V is scanned up to 0V, the memory cell of resistive random access memory (RRAM) remains on low resistance state, voltage begins from 0V to be scanned up to-and the memory cell of resistive random access memory (RRAM) changes high-impedance state into during 1.7V (reset voltage), when voltage from-when 1.7V was scanned up to 0V, the memory cell of resistive random access memory (RRAM) remained on high-impedance state.In circulation next time, when voltage from 0V be scanned up to+memory cell of resistive random access memory (RRAM) changes low resistance state into during 0.9V (set voltage), when voltage again from+when 0.9V is scanned up to 0V, the memory cell of resistive random access memory (RRAM) remains on low resistance state, voltage begins from 0V to be scanned up to-and the memory cell of resistive random access memory (RRAM) changes high-impedance state into during 1.6V (reset voltage), when voltage from-when 1.6V was scanned up to 0V, the memory cell of resistive random access memory (RRAM) remained on high-impedance state.After the electric forming process, the transition process of this high low resistance state can repeat, Fig. 3 has shown the process of continuous 100 high low resistance state circulations, difference between its high low resistance state is more than 50 times, the Standard resistance range of low resistance state is 37 Ω～40 Ω, the Standard resistance range of high-impedance state is 3000 Ω～6000 Ω, shows stability preferably.Fig. 4 shown in the process of continuous 100 high low resistance states circulation, the situation of change of set voltage and reset voltage, the scope of set voltage be+0.7V～+ 1V, the scope of resetting voltage is-1.6V～-1.8V, show good stability.
Claims (8)
1, a kind of memory cell of resistive random access memory (RRAM), comprise dielectric substrate, insulated substrate surface is provided with first electrode, be provided with on first electrode surface and have the intermediate layer that electric resistance changing characteristic material is made, the surface in intermediate layer is provided with second electrode, it is characterized in that: described intermediate layer is formed by diamond-like carbon film.
2, the memory cell of resistive random access memory (RRAM) according to claim 1, it is characterized in that: the diamond-like carbon film in described intermediate layer can be the intrinsic diamond-like carbon film, also can be for being doped with the diamond-like carbon film of chromium, and the atomic percentage conc of chromium in diamond-like carbon film is 0～20%.
3, the memory cell of resistive random access memory (RRAM) according to claim 1 and 2 is characterized in that: the thickness range in described intermediate layer is 10nm～200nm.
4, a kind of preparation method of memory cell of resistive random access memory (RRAM) is characterized in that: may further comprise the steps
Step 1, form conductive film as first electrode in insulated substrate surface;
Step 2, prepare diamond-like carbon film at first electrode surface;
Step 3, on the diamond-like carbon film surface preparation conductive film as second electrode.
5, preparation method according to claim 4, it is characterized in that: in the described step 2, adopt the method for ion beam depositing to prepare the intrinsic diamond-like carbon film at first electrode surface, the condition of work of ion beam depositing method is: employing acetylene is working gas, and the ion source power setting is 200～224W; Intrinsic diamond-like carbon film thickness is made as 10nm～200nm.
6, preparation method according to claim 4, it is characterized in that: in the described step 2, adopt the CVD (Chemical Vapor Deposition) method of ion beam combined magnetic-controlled sputter to prepare chromium-doped diamond-like carbon film at first electrode surface, the condition of work of ion beam combined magnetic-controlled sputter deposition process is: sputtering target material is high-purity chromium (at least 99.999%), adopt acetylene and argon gas as the work source of the gas, the voltage ratio of acetylene and argon gas is 3: 5～1: 1, ion source power is 200～224W, and sputtering source power is 900～1000W; The thickness of chromium-doped diamond-like carbon film is made as 10nm～200nm.
7, preparation method according to claim 4 is characterized in that: in the described step 3, the method that adopts sputter or electron beam evaporation is at diamond-like carbon film surface preparation second electrode, and second electrode adopts the method moulding of mask plate or photoetching.
8, according to any described preparation method of claim in the claim 4～7, it is characterized in that: also comprise
The method of step 4, employing reactive ion etching or inductively coupled plasma etching is prepared the device architecture of isolation on the acquired architecture basics of step 3.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104518083A (en) * | 2013-09-26 | 2015-04-15 | 中国科学院宁波材料技术与工程研究所 | Memory cell of resistive random access memory and preparation method thereof |
| US9640759B1 (en) | 2015-11-25 | 2017-05-02 | International Business Machines Corporation | Amorphous carbon resistive memory element with lateral heat dissipating structure |
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2009
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104518083A (en) * | 2013-09-26 | 2015-04-15 | 中国科学院宁波材料技术与工程研究所 | Memory cell of resistive random access memory and preparation method thereof |
| CN104518083B (en) * | 2013-09-26 | 2017-03-15 | 中国科学院宁波材料技术与工程研究所 | A kind of memory element of resistive random access memory (RRAM) and preparation method thereof |
| US9640759B1 (en) | 2015-11-25 | 2017-05-02 | International Business Machines Corporation | Amorphous carbon resistive memory element with lateral heat dissipating structure |
| US9947867B2 (en) | 2015-11-25 | 2018-04-17 | International Business Machines Corporation | Amorphous carbon resistive memory element with lateral heat dissipating structure |
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