CN101598909A - The organic photoconductor of sandwich construction - Google Patents
The organic photoconductor of sandwich construction Download PDFInfo
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- CN101598909A CN101598909A CNA2009100324669A CN200910032466A CN101598909A CN 101598909 A CN101598909 A CN 101598909A CN A2009100324669 A CNA2009100324669 A CN A2009100324669A CN 200910032466 A CN200910032466 A CN 200910032466A CN 101598909 A CN101598909 A CN 101598909A
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Abstract
The invention discloses a kind of organic photoconductor of sandwich construction, comprise conducting base, and the electric charge barrier layer that covers the conducting base surface from inside to outside successively, charge generating layers and charge transport layer, described electric charge barrier layer is that the coat by the oxide layer on conducting base surface and pbz polymer material is composited, the oxide layer surface adjacent with coat has a large amount of recessed microcellular structures, the interface between oxide layer and coat, interface between coat and the charge generating layers, have at least in the interface between charge generating layers and the charge transport layer on the interface and have wave structure; Its advantage is: this optical conductor stable performance, and easy to make, the output print quality is good, the product percent of pass height, long service life, integrated cost is lower.
Description
Technical field
The invention belongs to the technical field of organic photoconductor, relate in particular to a kind of multilayer layer structure of organic photoconductor.
Background technology
Organic photoconductor is the core component in the modern office equipments such as duplicating machine, laser printer, laser facsimile and multifunctional digital code intergrated machine, is mainly used in and realizes that light is with changing and imaging technique.
Organic photoconductor is also referred to as organic light guide drum, and its structure reaches the electric charge barrier layer, charge generating layers and the charge transport layer that cover the conducting base surface from inside to outside successively and forms mainly by conducting base, and matrix generally adopts conductive materials such as aluminium, aluminium alloy to make.And traditional electric charge barrier layer or form by single oxide layer, its shortcoming is: the technological requirement harshness, make trouble, yield rate is low, cost is high, the image quality instability; Be made up of the single coat that contains macromolecular material, its shortcoming is: life of product is low, easily breakdown, weatherability is poor.And the interface between electric charge barrier layer and charge generating layers, charge generating layers and charge transport layer is the interface on plane, the shortcoming of this interfacial structure is: a little less than the interface binding power, in use peel off easily, be easy to generate interference figure, influence the printing output quality.
Summary of the invention
The object of the present invention is to provide and a kind ofly can improve the electric charge barrier layer breakdown characteristics,, reduce production costs, and can improve the organic photoconductor of the sandwich construction of product percent of pass by simplifying product processes.
Further purpose of the present invention is to provide a kind of can reduce the incident diffraction of light, improves diffuse effect, thereby improves the quality of image, prevents to interfere the appearance of image; And can improve the organic photoconductor of the sandwich construction of adhesion between the coating and intermiscibility.
For realizing purpose of the present invention, a kind of organic photoconductor of sandwich construction, comprise conducting base, and the electric charge barrier layer, charge generating layers and the charge transport layer that cover the conducting base surface from inside to outside successively, described electric charge barrier layer is that the coat by the oxide layer on conducting base surface and pbz polymer material is composited, and has a large amount of microcellular structures in the oxide layer adjacent with coat.
For realizing further purpose of the present invention, a kind of organic photoconductor of sandwich construction also comprises: have at least in the interface between the interface between the interface between described oxide layer and coat, coat and the charge generating layers, charge generating layers and the charge transport layer on the interface to have wave structure;
Interface between described surface oxide layer and the coat is provided with wave structure, and is planar structure on the interface between the interface between coat and the charge generating layers, charge generating layers and the charge transport layer;
Being planar structure on the interface between described surface oxide layer and the coat, is wave structure on the interface between coat and the charge generating layers, is planar structure on the interface between charge generating layers and the charge transport layer;
Being planar structure on the interface between described surface oxide layer and the coat, is planar structure on the interface between coat and the charge generating layers, is wave structure on the interface between charge generating layers and the charge transport layer;
Being wave structure on the interface between described surface oxide layer and the coat, is wave structure on the interface between coat and the charge generating layers, is planar structure on the interface between charge generating layers and the charge transport layer;
Being wave structure on the interface between described surface oxide layer and the coat, is planar structure on the interface between coat and the charge generating layers, is wave structure on the interface between charge generating layers and the charge transport layer;
Being planar structure on the interface between described surface oxide layer and the coat, is wave structure on the interface between coat and the charge generating layers, is wave structure on the interface between charge generating layers and the charge transport layer;
Be wave structure on the interface between interface between interface between described surface oxide layer and the coat, coat and the charge generating layers, charge generating layers and the charge transport layer;
Described compound electric charge barrier layer thickness is between the 1-20 micron, and oxidated layer thickness wherein is between the 0.5-16 micron;
Described compound electric charge barrier layer thickness is preferably between the 1-10 micron, and wherein thickness of oxide layer is between the 0.5-4 micron;
Advantage of the present invention is: this optical conductor production technology is simpler, and technology controlling and process is convenient, and properties of product are stable, and qualification rate is higher; Adopt the print quality of exporting behind this optical conductor good, long service life, integrated cost is lower.
Be described in further detail below in conjunction with the organic photoconductor of accompanying drawing sandwich construction of the present invention:
Description of drawings
Fig. 1 is the structural representation of the organic photoconductor of a kind of sandwich construction of the present invention;
Fig. 2 is that the cuing open of organic photoconductor of second kind of sandwich construction shown structural representation;
Fig. 3 shows structural representation for the cuing open of organic photoconductor of the third sandwich construction;
Fig. 4 is that the cuing open of organic photoconductor of the 4th kind of sandwich construction shown structural representation;
Fig. 5 is that the cuing open of organic photoconductor of the 5th kind of sandwich construction shown structural representation;
Fig. 6 is that the cuing open of organic photoconductor of the 6th kind of sandwich construction shown structural representation;
Fig. 7 is that the cuing open of organic photoconductor of the 7th kind of sandwich construction shown structural representation;
Among the figure: 1, conducting base, 2, electric charge barrier layer, 21, oxide layer, 22, coat, 3, charge generating layers, 4, charge transport layer, 5, microcellular structure.
Embodiment
As shown in Figure 1, a kind of organic photoconductor of sandwich construction, comprise conducting base 1, and the electric charge barrier layer 2, charge generating layers 3 and the charge transport layer 4 that cover conducting base 1 surface from inside to outside successively, electric charge barrier layer 2 is that the coat 22 by the oxide layer 21 on conducting base 1 surface and pbz polymer material is composited, and has a large amount of microcellular structures in the oxide layer 21 adjacent with coat 22.The pore size of these microcellular structures differs, and is irregular shape and is distributed in the gasification layer 21.If the surface in oxide layer 21 does not apply polymer material layer, then the microcellular structures in the oxide layer 21 being required can be very high, requires pore size to try one's best little and reach unanimity, and therefore, the production cost of this oxide layer is higher, and quality is restive.
Shown in Fig. 1 to 7, have at least on the interface in the interface between interface between interface between oxide layer 21 and coat 22, coat 22 and the charge generating layers 3, charge generating layers 3 and the charge transport layer 4 and have wave structure, this wave structure can improve the diffuse effect of incident light at this, prevent the interference of image, improve the quality of image, and undulatory faying face can improve the adhesion between above-mentioned each layer and the layer, further guarantees the quality of product.
As shown in Figure 1, the interface between described surface oxide layer 21 and the coat 22 is provided with wave structure, is planar structure on the interface between the interface between coat 22 and the charge generating layers 3, charge generating layers 3 and the charge transport layer 4.
As shown in Figure 2, be planar structure on the interface between described surface oxide layer 21 and the coat 22, be wave structure on the interface between coat 22 and the charge generating layers 3, be planar structure on the interface between charge generating layers 3 and the charge transport layer 4.
As shown in Figure 3, be planar structure on the interface between described surface oxide layer 21 and the coat 22, be planar structure on the interface between coat 22 and the charge generating layers 3, be wave structure on the interface between charge generating layers 3 and the charge transport layer 4.
As shown in Figure 4, be wave structure on the interface between described surface oxide layer 21 and the coat 22, be wave structure on the interface between coat 22 and the charge generating layers 3, be planar structure on the interface between charge generating layers 3 and the charge transport layer 4.
As shown in Figure 5, be wave structure on the interface between described surface oxide layer 21 and the coat 22, be planar structure on the interface between coat 22 and the charge generating layers 3, be wave structure on the interface between charge generating layers 3 and the charge transport layer 4.
As shown in Figure 6, be planar structure on the interface between described surface oxide layer 21 and the coat 22, be wave structure on the interface between coat 22 and the charge generating layers 3, be wave structure on the interface between charge generating layers 3 and the charge transport layer 4.
As shown in Figure 7, be wave structure on the interface between the interface between the interface between described surface oxide layer 21 and the coat 22, coat 22 and the charge generating layers 3, charge generating layers 3 and the charge transport layer 4.
In addition, also can all adopt planar structure on above-mentioned surface oxide layer 21 and the interface between interface, charge generating layers 3 and the charge transport layer 4 between the interface between the coat 22, coat 22 and the charge generating layers 3.
In each above-mentioned embodiment, described compound electric charge barrier layer 2 thickness are 1---and between 20 microns, oxide layer 21 thickness wherein are 0.5---between 16 microns; But if reach better effect, then described compound electric charge barrier layer thickness is preferably in 1---between 10 microns, wherein the thickness of oxide layer 21 is 0.5---between 4 microns.
Claims (11)
1, a kind of organic photoconductor of sandwich construction comprises conducting base (1), and the electric charge barrier layer (2), charge generating layers (3) and the charge transport layer (4) that cover conducting base (1) surface from inside to outside successively.It is characterized in that: described electric charge barrier layer.The 2nd, be composited by the oxide layer (21) on conducting base (1) surface and the coat (22) of pbz polymer material, have a large amount of microcellular structures in the oxide layer (21) adjacent with coat (22).
2, the organic photoconductor of a kind of sandwich construction according to claim 1 is characterized in that: have at least in the interface between interface, charge generating layers (3) and the charge transport layer (4) between the interface between described oxide layer (21) and coat (22), coating coating (22) and the charge generating layers (3) to have (concavo-convex) wave structure on the interface.
3, the organic photoconductor of a kind of sandwich construction according to claim 2.It is characterized in that: the interface between described surface oxide layer (21) and the coat (22) is provided with wave structure, and is planar structure on the interface between the interface between coat (22) and the charge generating layers (3), charge generating layers (3) and the charge transport layer (4);
4, the organic photoconductor of a kind of sandwich construction according to claim 2, it is characterized in that: be planar structure on the interface between described surface oxide layer (21) and the coat (22), on the interface between coat (22) and the charge generating layers (3) is wave structure, is planar structure on the interface between charge generating layers (3) and the charge transport layer (4).
5, the organic photoconductor of a kind of sandwich construction according to claim 2, it is characterized in that: be planar structure on the interface between described surface oxide layer (21) and the coat (22), on the interface between coat (22) and the charge generating layers (3) is planar structure, is wave structure on the interface between charge generating layers (3) and the charge transport layer (4).
6, the organic photoconductor of a kind of sandwich construction according to claim 2, it is characterized in that: be wave structure on the interface between described surface oxide layer (21) and the coat (22), on the interface between coat (22) and the charge generating layers (3) is wave structure, is planar structure on the interface between charge generating layers (3) and the charge transport layer (4).
7, the organic photoconductor of a kind of sandwich construction according to claim 2.It is characterized in that: be wave structure on the interface between described surface oxide layer (21) and the coat (22), on the interface between coat (22) and the charge generating layers (3) is planar structure, is wave structure on the interface between charge generating layers (3) and the charge transport layer (4).
8, the organic photoconductor of a kind of sandwich construction according to claim 2, it is characterized in that: be planar structure on the interface between described surface oxide layer (21) and the coat (22), on the interface between coat (22) and the charge generating layers (3) is wave structure, is wave structure on the interface between charge generating layers (3) and the charge transport layer (4).
9, the organic photoconductor of a kind of sandwich construction according to claim 2 is characterized in that: be wave structure on the interface between the interface between the interface between described surface oxide layer (21) and the coat (22), coat (22) and the charge generating layers (3), charge generating layers (3) and the charge transport layer (4).
10, according to the organic photoconductor of any one sandwich construction in the claim 1 to 9, it is characterized in that.Described compound electric charge barrier layer (2) thickness is 1---and between 20 microns, oxide layer wherein (21) thickness is 0.5---between 16 microns.
11, according to the organic photoconductor of any one sandwich construction in the claim 1 to 9, it is characterized in that.Described compound electric charge barrier layer (2) thickness is preferably in 1---and between 10 microns, wherein the thickness of oxide layer (21) is 0.5---between 4 microns.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009100324669A CN101598909B (en) | 2009-07-06 | 2009-07-06 | Multiple-layer structure organic photoconductor |
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| CN2009100324669A CN101598909B (en) | 2009-07-06 | 2009-07-06 | Multiple-layer structure organic photoconductor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108470847A (en) * | 2018-04-13 | 2018-08-31 | 京东方科技集团股份有限公司 | OLED device and preparation method thereof, display device |
| CN109790625A (en) * | 2016-10-05 | 2019-05-21 | 惠普发展公司，有限责任合伙企业 | Alloy substrates with external skin |
| CN111085417A (en) * | 2019-12-19 | 2020-05-01 | 苏州恒久光电科技股份有限公司 | Processing method of electronegative multilayer OPC drum |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2791704Y (en) * | 2004-12-14 | 2006-06-28 | 苏州恒久光电科技有限公司 | Organic light conductor |
| KR20080005734A (en) * | 2006-07-10 | 2008-01-15 | 삼성전자주식회사 | Organophotoreceptor and electrophotographic imaging apparatus employing the organophotoreceptor |
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2009
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109790625A (en) * | 2016-10-05 | 2019-05-21 | 惠普发展公司，有限责任合伙企业 | Alloy substrates with external skin |
| CN108470847A (en) * | 2018-04-13 | 2018-08-31 | 京东方科技集团股份有限公司 | OLED device and preparation method thereof, display device |
| US11108022B2 (en) | 2018-04-13 | 2021-08-31 | Boe Technology Group Co., Ltd. | OLED device, method for manufacturing the same, and display apparatus |
| CN111085417A (en) * | 2019-12-19 | 2020-05-01 | 苏州恒久光电科技股份有限公司 | Processing method of electronegative multilayer OPC drum |
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| CN101598909B (en) | 2011-04-06 |
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Address after: 215104, No. 89, Guandu Road, Yue Xi Road, Suzhou, Jiangsu, Wuzhong District Patentee after: Suzhou Goldengreen Technologies Ltd. Address before: Suzhou City, Jiangsu province 215128 City Wuzhong Economic Development Zone Suzhou Street No. 157 Patentee before: Suzhou Goldengreen Technologies Ltd. |