CN101584018B - Ion implantation device with a dual pumping mode and method thereof - Google Patents

Ion implantation device with a dual pumping mode and method thereof Download PDF

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CN101584018B
CN101584018B CN2007800491196A CN200780049119A CN101584018B CN 101584018 B CN101584018 B CN 101584018B CN 2007800491196 A CN2007800491196 A CN 2007800491196A CN 200780049119 A CN200780049119 A CN 200780049119A CN 101584018 B CN101584018 B CN 101584018B
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ion beam
ion
controller
pressure
source shell
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CN101584018A (en
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乔纳森·吉罗德·英格兰
克里斯多夫·R·汉特曼
杰·汤玛斯·舒尔
约瑟·C·欧尔森
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Varian Semiconductor Equipment Associates Inc
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/32—Hydrogen storage

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Abstract

An ion implantation device with a dual pumping mode and method thereof for use in producing atomic or molecular ion beams are disclosed. In one particular exemplary embodiment, an ion implantation apparatus is provided for controlling a pressure within an ion beam source housing corresponding to an ion beam species being produced. The ion implantation apparatus may include the ion beam source housing comprising a plurality of species for use in ion beam production. A pumping section may also be included for evacuating gas from the ion beam source housing. A controller may further be included for controlling the pumping section according to pumping parameters corresponding to a species of the plurality of species being used for ion beam production.

Description

Ion implantation device and method thereof with dual pumping mode
Technical field
The present invention relates generally to the semiconductor manufacturing, and more particularly relates to a kind of ion implantation device with dual pumping mode that is used to produce atom or molecular ion beam.
Background technology
It is the routine techniques that is used for dopant is incorporated into material such as semiconductor wafer for example that ion is implanted.Dopant is implantable to have required conductive district with formation in a material.This type of implantation region can form the active area in the gained device (for example, semiconductor device).Usually, during ion was implanted, source feed-in gas was in ion sourceization.Ion is from the source emission and can accelerate to selected energy to form ion beam.Described bundle is guided in the material surface place, and the ion penetration of collision is in the block of material and serve as the conductive dopant that increases material.
The conventional ion source can have limitation under some implantation condition.For instance, the conventional ion source may be able to have operation inefficiently under the low extraction energy that uses in the implantation technology of implantation region of super shallow junction depth and/or the high beam electronic current in formation.Can describe in the 11/342nd, No. 183 common U. S. application case co-pending at the molecule of the standard source intermediate ionization that conventionally is used for the atom implant, described application case is incorporated herein by reference in full.
In view of above content, can understand, there are the prominent question and the shortcoming that are associated with current ion embedding technology.
Summary of the invention
The present invention discloses a kind of ion implantation device with dual pumping mode and method thereof that is used to produce atom or molecular ion beam.In a particular exemplary embodiment, a kind of ion implantation equipment is provided, it is used to control the pressure corresponding in the ion beam source shell of the ion beam kind that is produced.Ion implantation equipment can comprise the ion beam source shell, and it comprises a plurality of kinds that are used for the ion beam generation.Also can comprise the suction section, be used for from ion beam source shell emission gases.Can further comprise controller, be used for basis and control the suction section corresponding to the suction parameter of a kind of a plurality of kinds that are used for the ion beam generation.
Others according to this particular exemplary embodiment, ion implantation equipment can further comprise pressure measurement cell, it is used to produce the voltage force signal corresponding to the pressure in the ion beam source shell, and its middle controller can be regulated the operation of suction section based on the voltage force signal.
According to the further aspect of this particular exemplary embodiment, pressure measurement cell can be measured the total pressure in the ion beam source shell.
According to the additional aspect of this particular exemplary embodiment, pressure measurement cell can be measured the partial pressure of one or more gas componants in the ion beam source shell.
Others according to this particular exemplary embodiment, ion implantation equipment can further comprise the beam electronic current measuring unit, it is used to produce the electric beam electronic current signal corresponding to the beam electronic current of the ion beam that is produced, and its middle controller can be based on the operation of electric beam electronic current Signal Regulation suction section.
According to the further aspect of this particular exemplary embodiment, a plurality of kinds can comprise an at least one molecule and an atomic species.
According to the additional aspect of this particular exemplary embodiment, wherein when receiving indication when being used for kind that ion beam produces to the signal of the switching of another kind, controller can be controlled the suction section according to the suction parameter corresponding to another kind.
According to the others of this particular exemplary embodiment, controller can be controlled the suction section by regulating aspiration rate, the interpolation of ballast gas and any number in the vario valve.
In another particular exemplary embodiment, provide the method for a kind of control corresponding to the pressure in the ion beam source shell of the ion beam kind that is produced.Described method can be included in to be used in the ion beam source shell one in a plurality of kinds to produce ion beam, uses the suction section from ion beam source shell emission gases, and according to controlling the suction section corresponding to the suction parameter of a kind that is used for a plurality of kinds that ion beam produces.
According to the others of this particular exemplary embodiment, described method can further comprise by the voltage force signal of pressure measurement cell generation corresponding to the pressure in the ion beam source shell, and its middle controller can be regulated the operation of suction section based on the voltage force signal.
According to the further aspect of this particular exemplary embodiment, pressure measurement cell can be measured the total pressure in the ion beam source shell.
According to the additional aspect of this particular exemplary embodiment, pressure measurement cell can be measured the partial pressure of one or more gas componants in the ion beam source shell.
Others according to this particular exemplary embodiment, described method can further comprise the electric beam electronic current signal of transmitted beam current measuring unit generation corresponding to the beam electronic current of the ion beam that is produced, and its middle controller can be based on the operation of electric beam electronic current Signal Regulation suction section.
According to the further aspect of this particular exemplary embodiment, a plurality of kinds can comprise an at least one molecule and an atomic species.
According to the additional aspect of this particular exemplary embodiment, wherein when receiving indication when being used for kind that ion beam produces to the signal of the switching of another kind, controller can be controlled the suction section according to the suction parameter corresponding to another kind.
According to the others of this particular exemplary embodiment, controller can be controlled the suction section by regulating aspiration rate, the interpolation of ballast gas and any number in the vario valve.
In another particular exemplary embodiment, provide at least a processor readable carrier, it is used to store the computer program with instruction, and described instruction is configured to be read so that indicate described at least one processor to carry out by at least one processor and is used to carry out the computer procedures of a kind of control corresponding to the method for the pressure in the ion beam source shell of the ion beam kind that is produced.
With reference to one exemplary embodiment more detailed description of the present invention the present invention as shown in drawings.Though the hereinafter with reference one exemplary embodiment is described the present invention, should be appreciated that, the invention is not restricted to this.The one of ordinary skill in the art that obtain the teaching of this paper will recognize extra embodiment, modification and embodiment and other use field, its in the scope of the invention as described herein and the present invention can have remarkable effectiveness with respect to it.
In order to promote to understand more fully the present invention, existing referring to accompanying drawing, wherein with same numeral with reference to similar elements.These are graphic to should not be construed as restriction the present invention, but wishes only to be exemplary.
Description of drawings
Fig. 1 illustrates the block diagram according to the beamline ion implanters implanting device of one embodiment of the invention.
Fig. 2 is the ionogenic block diagram of Fig. 1.
Fig. 3 is the block diagram of an embodiment consistent with the ion source of Fig. 2.
Fig. 4 is the flow chart of explanation according to an embodiment of the black soy sauce adsorption technology of one embodiment of the invention.
Embodiment
Referring to Fig. 1, illustrate block diagram according to the beamline ion implanters implanting device of one embodiment of the invention.Beamline ion implanters implanting device 100 can comprise ion beam system 102, terminal identity 170, controller 120 and user interface system 122.Ion beam system 102 comprises the ion source 103 in order to the generation ion beam, and in order to other assembly and system towards the target surface 108 guiding ion beams 104 that are positioned at the substrate 110 in the terminal identity 170.But ion beam 104 transmitted beams move, substrate moves or be distributed in by its any combination on the target surface 108 of substrate 110.
Ion beam system 102 can comprise various types of assemblies and system to produce and guiding has the ion beam 104 of desirable characteristics.Ion beam 104 can be some a bundle or a ribbon beam.The point bundle can have the irregular shape of cross section that can be approximately circular in one case.Do not having under the situation of scanner, some Shu Kewei fixes or static some bundle.Perhaps, bundle can be by scanner scanning to provide ion beam.Ribbon beam can have big width/aspect ratio, and can be the same wide with substrate 110 at least.Ion beam 104 can be the charged particle beam of any kind, for example is used for the high energy ion beam that substrate 110 is implanted.
Terminal identity 170 can support one or more substrates in the path of ion beam 104, makes the ion of required kind be implanted in the substrate 110.Substrate 110 can be clamped to pressing plate 112 by pressing plate 112 supports and by known technologies such as for example electrostatic substrate clampings.Substrate 110 for example can be taked various physical forms such as general disc-shape.Substrate 110 can be the Semiconductor substrate that maybe will use the semi-conducting material of any kinds such as any other material of ion beam 104 implantation to make by for example silicon.
Terminal identity 170 can comprise substrate drive system (undeclared) physically substrate 110 moved to pressing plate 112 from the fixing zone or to move substrate 110 from pressing plate 112.Terminal identity 170 also can comprise driving mechanism 116 to drive pressing plate 112 with required mode and therefore to drive the substrate 110 that is clamped to pressing plate 112.
Controller 120 can receive input data and instruction from the system and the assembly of any kind of of beamline ion implanters implanting device 100, and provides output signal to control described beamline ion implanters implanting device 100.Controller 120 can be or comprise can be through programming to carry out the all-purpose computer or the all-purpose computer network of required input/output function.Controller 120 can comprise processor 130 and machine-readable medium 132.Processor 130 for example can comprise one or more can be from this technology that Intel company buys known processors.Machine-readable medium 132 can comprise one or more machinable mediums, random access memory (random-access memory for example, RAM), dynamic ram (dynamicRAM, DRAM), disk (for example, floppy disk and hard disk drive), CD (for example, CD-ROM), but and/or store instruction for any other device of carrying out.Controller 120 also can comprise other electronic circuit or assembly, for example application-specific integrated circuit (ASIC), other hardwired or programmable electronics device, discrete element circuits etc.
User interface system 122 can be including (but not limited to) device such as for example touch-screen, keyboard, user's indicator device, display, printer to allow user input commands and/or data and/or monitor beamline ion implanters implanting devices 100 via controller 120.
High perveance (that is, low-yield, high beam electronic current) ion beam suffers space charge to enlarge (blowup), and wherein the identical charged ion in the ion beam repels each other, thereby causes the bundle expansion.This has limited the magnitude of the beam electronic current that can transmit in bunch.When identical charged ion is cation, can control repulsion in the ion beam by electronics is incorporated into.Negative electrical charge on the electronics is offset the repulsion of cation.The background gas that a kind of electronics formation method exists in the ion of ion beam and vacuum takes place when conflicting.Often can improve the low energy beam transmission efficiency to increase electron production by the pressure that increases existing background gas.Yet, too high if pressure becomes, the beam ion experience charge-exchange reciprocation of so excessive mark, and loss of beam current.Known in this technology, pressure can be through selecting to optimize the bundle transmission.This is in the past by realizing immediately gas being incorporated into the district after extract ion source 103 or farther place, downstream.By be used for and wafer surface on the electron beam of electric charge accumulation and gas that submerged plasma system (plasma flood system) is introduced and plasma also improved bundle usually and transmitted.
Molecular beam can have the perveance lower than atomic beam, promptly higher energy and lower beam electronic current.A plurality of atoms in the molecule are shared the kinetic energy of molecule according to its atomic weight.This means,, can under higher-energy, transmit molecular beam in order to realize being equivalent to the shallow implant of low-yield atomic beam.Molecule can contain some atoms with the kind of paying close attention to (for example, dopant species (for example, boron)).Molecule can be used as separately charged kind and transmits, and therefore with atomic beam in the required molecular beam electric current of the flux coupling of the kind paid close attention to the ratio of number that can be by the atom paid close attention in the molecule and less.The transmission of molecular beam can mean that space charge may not be is so important and problem that need overcome under higher-energy and low electric beam electronic current.Yet the division of the molecule that causes by conflicting with background gas is significant loss mechanism, does not exist for atomic beam.Therefore, being used for optimum pressure that molecular beam transmits may be not identical with atomic beam.
Also can be according to the condition in the next tuning ion source arc chamber of technology.Usually, may be aspect intensity with the tuning several percentages of beam electronic current to realize entering the accurate dosage in the wafer.Can revise ionization character in the ion source by changing the parameters such as for example pressure (feed-in speed), arc voltage, arc current (via cathode emission) and magnetic field be associated with the source.For molecular ion, find that these parameters of change can not produce the abundant refined control to beam electronic current.As can impel the discharge decay at change arc voltage, arc current or magnetic field that atomic beam carried out.Molecule uses baking box to be formed by solid owing to its heavier weight often.Can control feed-in speed by the temperature that changes baking box.Stable time of oven temperature may be long so that this can not become the effective mechanism of control feed-in supply.Pressure in the shell of source will influence the pressure in the arc chamber, and it influences the Ionization Efficiency in the source plasma.Therefore, can control the molecular beam electric current by tuning source case pres-sure.
Therefore, need a kind of method that can change pressure, and described pressure continues to change the beam electronic current that is produced with control in order to the kind that foundation is produced.
Fig. 2 is described in more detail the block diagram of the ion source 103 of Fig. 1.Ion source 103 can comprise ion source shell 206, pumping system 202, pressure sensor 204 and controller 220.Controller 220 can be the controller 120 of Fig. 1 or independent controller.But controller 220 operating pumps systems 202 are to keep the required pressure in the ion source shell 206.
Controller 220 can operating pumps system 202 produce to be used for atomic ion beam in the first pump pattern, and operating pumps system 202 produces to be used for molecular ion beam in the second pump pattern.Can via user interface system 122 in detail the initial formulation that the specified atom ion beam produces or molecular ion beam produces be described in detail by the user, maybe can be from the described initial formulation of the storage access that is coupled to controller 220.Controller 220 can come operating pumps system 202 according to the suction parameter that is associated with employed source feed-in material.In response, controller 220 may command pumping systems 202 are to operate in first or second suction mode.Controller 220 also can be in response to the different feedback signals of the condition of the variation of representing the bunch implanting device.In one embodiment, feedback signal can be from the pressure sensor 204 and/or the beam current sensor 224 (for example, faraday sensor as known in the art (Faradaysensor)) of the pressure that the ion source shell is described in detail in detail.Feedback signal from beam current sensor 224 can be utilized with the control vacuum pressure by controller 220, so that make the beam electronic current maximization or it is modified to controlled value.
Divide the period of the day from 11 p.m. to 1 a.m when forming, divide, thereby cause many fragments.Division is because the pyrolysis, the pyrolysis on the heat vapourizer wall on (for example) thermionic ion source arc chamber wall, or owing to ion source arc chamber and ion source shell in take place conflicting of electronics, ion or atom.The big mark of fragment may be a hydrogen, and this usually can the more hard-pumped suction of bigger mass fragments.Therefore, the pumping velocity of the comparable first atomic ion beam suction mode of the pumping velocity of the second molecular ion beam suction mode is big.
Turn to Fig. 3, the block diagram of the ionogenic vacuum system consistent with the ion source of Fig. 2 is described.Vacuum system can comprise ion source shell 306.Vaporizer 340 can contain the source feed-in material that is used to form molecular ion beam at ion source arc chamber 342, and gas source 341 can contain the source gas that is used to form atomic ion beam.Although be illustrated as in ion source shell 306, gas source 341 also can be positioned on ion source shell 306 outsides.
Ion source shell 306 can be by one or more turbine pump 324 suctions, and described turbine pump 324 can further be supported by for example mechanical pump such as rotary pump or dry pump 326, because it realizes high gas treatment amount.Preferably, controller can change pumping velocity by the speed that changes the turbine rotation.Yet, controller also can by locate at the venturi (throat) of turbine pump 324 or blade in add ballast gas (ballast gas), speed by changing fore pump (backing pump) 326 (for example, by changing its rotary speed or ballast gas being added in the fore pump), by above turbine pump 324, (for example using vario valve 328, butterfly valve) uses vario valve 330 or in the prime line, change pumping velocity.Perhaps, can use venting (bleed) 344 in the source of entering.
Can be by selecting the one or more vacuum systems of describing in the above-described variable.A vacuum systems (pump pattern 1) may be selected to be the starting point during atomic beam produces, and alternative vacuum systems (pump pattern 2) is used for the molecular beam generation.This can be used for setting the value of a prescription definition.Perhaps, the total vacuum pressure or the partial pressure of gas component can be set at selected value.Described value can be corresponding to the total pressure as being measured by vacuum gauge 334, and described vacuum gauge 334 is installed on the shell of source or other place (for example, pump prime line (pump foreline) 336).With under the possible typical operation pressure, meter 334 can be ionization meter (for example, cold cathode or hot cathode) in the shell of source, and it will measure the total pressure in the shell of source.Perhaps, for example equipment such as four utmost points (quadrupole) mass spectrometer or time-of-flight mass spectrometer can be used for measuring the different types of partial pressure that exists in the residual vacuum.The feedback signal of the one or more generations from pressure-measuring instrument can be used for changing in the parameter of above enumerating one or more with control vacuum systems.Feedback signal can with gas componant in one or more (for example, hydrogen) total pressure or partial pressure are relevant, but can be any other kind partial pressures, or the partial pressure sum of a plurality of kinds.
Can change vacuum pressure based on the beam electronic current measurement.Beam electronic current can be from faraday or other detector of a part that is used as dosimetry system.Perhaps, other place that faraday can be in bunch for example is right after after mass analysis magnets.Measured quality can be a molecule to be implanted, and maybe can be can be known and another relevant molecular fragment of beam electronic current of implanting.Feedback signal from the beam electronic current detector can be used for controlling vacuum pressure so that beam electronic current maximizes, or it is revised as desirable value.
Turn to Fig. 4, it is that explanation is controlled the flow chart of an embodiment of the pressure in the ion beam source shell according to just producing atomic beam or molecular beam.In step 402, determine to produce atomic beam or molecular beam.It is described that determine can be based on user's input or can be based on controlled operation.If will produce atomic beam, operation moves to step 404 so.In step 404, the beamline ion implanters implanting device is configured to use atomic source to produce bundle.
When configuration beamline ion implanters implanting device produced bundle to use atomic beam source, controller 220 was according to controlling suction system 202 corresponding to the vacuum systems of atomic beam source.Use with value and can derive by controller 220 by user's input or the value from be stored in the memory that is coupled to controller 220 at atomic beam source control suction system 202.Begin in case atomic beam produces, and controller 220 (in step 406) continues to change suction system according to feedback signal (for example, pressure discussed above or beam current feedback signal).
In step 408, controller 220 determines that atomic beam generation will continue, finish still to switch to molecular beam produces.If in step 408, controller 220 determines that the atomic beam generation will continue, and operation turning back to step 406 so.Yet, if determining the atomic beam generation, will finish by controller 220, the pump control operation finishes so.If controller 220 determines that the atomic beam generation will switch to molecular beam and produce, transition of operation is to step 410 so.Therefore step 410,412 and 414 will omit the description to it to operate with mode like the class of operation of describing respectively in step 404,406 and 408.
At this some place, it should be noted that the ion implantation device common (to a certain extent) with dual pumping mode according to the present invention described above relates to processing input data and produces dateout.This input data processing and dateout produce and can implement in hardware or software.For instance, can in having the ion implantation device of dual pumping mode, use specific electronic components, perhaps be used to implement and the similar or interlock circuit of controlling according to the present invention corresponding to the function of the connection of the pressure correlation in the ion beam source shell of the ion beam kind that is produced described above.Perhaps, can implement the function that is associated with the ion implantation device with dual pumping mode according to the present invention described above according to one or more processors of institute's store instruction operation.In this case, this type of instruction (for example can be stored in the readable carrier of one or more processors so, disk or other medium) upward or via one or more signals that comprise in one or more carrier waves be transferred to one or more processors, be within the scope of the invention.
The present invention should not be restricted on scope owing to specific embodiment described herein.In fact, one of ordinary skill in the art will understand (except that described herein those) other various embodiment of the present invention and from the above description to modification of the present invention in content and the accompanying drawing.Therefore, this type of other embodiment and modification are wished to fall within the scope of the invention.In addition, although this paper describes the present invention in the context for the particular of specific purpose in specific environment, but one of ordinary skill in the art will understand, its serviceability is not limited thereto, and the present invention can implement in the environment of any number for the purpose of any number valuably.Therefore, appended claims should be according to complete range of the present invention and spirit are explained as described herein.

Claims (17)

1. an ion implantation equipment is used to control the pressure corresponding in the ion beam source shell of the ion beam kind that is produced, and it comprises:
The ion beam source shell, it comprises a plurality of kinds that are used for the ion beam generation;
The suction section is used for from described ion beam source shell emission gases; And
Controller is used for basis and controls described suction section corresponding to the suction parameter of a kind of the described a plurality of kinds that are used for the ion beam generation.
2. ion implantation equipment according to claim 1, wherein said ion implantation equipment further comprises:
Pressure measurement cell, it is used to produce the voltage force signal corresponding to the pressure in the described ion beam source shell,
Wherein said controller is regulated the operation of described suction section based on described voltage force signal.
3. ion implantation equipment according to claim 2, wherein said pressure measurement cell are measured the total pressure in the described ion beam source shell.
4. ion implantation equipment according to claim 2, wherein said pressure measurement cell are measured the partial pressure of one or more gas componants in the described ion beam source shell.
5. ion implantation equipment according to claim 1, wherein said ion implantation equipment further comprises:
The beam electronic current measuring unit, it is used to produce the electric beam electronic current signal corresponding to the beam electronic current of the ion beam of described generation,
Wherein said controller is based on the operation of the described suction section of described electric beam electronic current Signal Regulation.
6. ion implantation equipment according to claim 1, wherein said a plurality of kinds comprise an at least one molecule and an atomic species.
7. ion implantation equipment according to claim 1, wherein when receiving indication when being used for described kind that ion beam produces to the signal of the switching of another kind, described controller is according to controlling described suction section corresponding to the suction parameter of described another kind.
8. ion implantation equipment according to claim 1, wherein said controller is controlled described suction section by interpolation and any number in the vario valve of regulating aspiration rate, ballast gas.
9. a control is corresponding to the method for the pressure in the ion beam source shell of the ion beam kind that is produced, and it comprises:
In the ion beam source shell, use one in a plurality of kinds to produce ion beam;
Use the suction section from described ion beam source shell emission gases; And
According to controlling described suction section corresponding to the suction parameter of a kind that is used for described a plurality of kinds that ion beam produces.
10. method according to claim 9, it further comprises:
By the voltage force signal of pressure measurement cell generation corresponding to the pressure in the described ion beam source shell,
Its middle controller is regulated the operation of described suction section based on described voltage force signal.
11. method according to claim 10, wherein said pressure measurement cell are measured the total pressure in the described ion beam source shell.
12. method according to claim 10, wherein said pressure measurement cell are measured the partial pressure of one or more gas componants in the described ion beam source shell.
13. method according to claim 9, wherein said ion implantation equipment further comprises:
The transmitted beam current measuring unit produces the electric beam electronic current signal corresponding to the beam electronic current of the ion beam of described generation,
Its middle controller is based on the operation of the described suction section of described electric beam electronic current Signal Regulation.
14. method according to claim 9, wherein said a plurality of kinds comprise an at least one molecule and an atomic species.
15. method according to claim 9, wherein when receiving indication when being used for described kind that ion beam produces to the signal of the switching of another kind, controller is according to controlling described suction section corresponding to the suction parameter of described another kind.
16. method according to claim 9, its middle controller is controlled described suction section by interpolation and any number in the vario valve of regulating aspiration rate, ballast gas.
17. the readable carrier of at least a processor, it is used to store the computer program with instruction, and described instruction is configured to and can be read so that indicate described at least one processor to carry out the computer procedures that are used to carry out method according to claim 9 by at least one processor.
CN2007800491196A 2006-11-08 2007-11-08 Ion implantation device with a dual pumping mode and method thereof Active CN101584018B (en)

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US85795406P 2006-11-08 2006-11-08
US60/857,954 2006-11-08
US11/866,099 2007-10-02
US11/866,099 US7622722B2 (en) 2006-11-08 2007-10-02 Ion implantation device with a dual pumping mode and method thereof
PCT/US2007/084114 WO2008058246A2 (en) 2006-11-08 2007-11-08 Ion implantation device with a dual pumping mode and method thereof

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5672882A (en) * 1995-12-29 1997-09-30 Advanced Micro Devices, Inc. Ion implantation device with a closed-loop process chamber pressure control system
CN1208245A (en) * 1997-01-17 1999-02-17 易通公司 Dose control for use in ion implanter
US6259091B1 (en) * 1996-01-05 2001-07-10 Battelle Memorial Institute Apparatus for reduction of selected ion intensities in confined ion beams

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5672882A (en) * 1995-12-29 1997-09-30 Advanced Micro Devices, Inc. Ion implantation device with a closed-loop process chamber pressure control system
US6259091B1 (en) * 1996-01-05 2001-07-10 Battelle Memorial Institute Apparatus for reduction of selected ion intensities in confined ion beams
CN1208245A (en) * 1997-01-17 1999-02-17 易通公司 Dose control for use in ion implanter

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