CN101581756A - Non-contact detection method of LED chip - Google Patents
Non-contact detection method of LED chip Download PDFInfo
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- CN101581756A CN101581756A CN 200910138900 CN200910138900A CN101581756A CN 101581756 A CN101581756 A CN 101581756A CN 200910138900 CN200910138900 CN 200910138900 CN 200910138900 A CN200910138900 A CN 200910138900A CN 101581756 A CN101581756 A CN 101581756A
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Abstract
The invention relates to a non-contact detection method of an LED chip, the key point of which is as follows: a detection control and signal acquisition processing unit (9) is used for controlling a light source (7) to emit an exciting light beam (4) which transmits a half transparent/half reflecting mirror system (12) to irradiate a PN junction (1) of an LED chip (2) to be detected; the half transparent/half reflecting mirror system (12) reflects spontaneous transient light (3) formed on the PN junction (1) to a convergent lens system (6) which then converges the light beam to a photoelectric converter (8); and the photoelectric converter (8) converts the light signal into an electrical signal and transmits the electrical signal to the detection control and signal acquisition processing unit (9) for processing so as to realize the detection of the LED chip. By adopting the non-contact detection method, the detection on the performance parameters of the LED chip can be realized without contacting the LED chip.
Description
The application be that August 3, application number in 2007 are 200710092521.4 the applying date, denomination of invention divides an application for the application for a patent for invention of " a kind of non-contact detection method of led chip/wafer ".
Technical field
The present invention relates to a kind of detection method of led chip/wafer, particularly a kind of single led chip that is used for not encapsulating or the non-contact detection method that the wafer of a plurality of led chips is arranged.
Background technology
LED (Light Emitting Diode) is with its intrinsic characteristics, as power saving, life-span is long, vibration resistance, response speed is fast, characteristics such as cold light source, be widely used in pilot lamp, signal lamp, display screen, fields such as Landscape Lighting, but LED illumination can't universalness for various reasons, wherein costing an arm and a leg is the principal element of restriction LED lighting source universalness, and the encapsulation of led chip is the prime cost source that the LED finished product is produced, has only the yield rate that improves after encapsulating, could reduce the LED production cost of products, the chip detection before the encapsulation is exactly the process of necessity of LED batch process like this.
U.S. patent of invention US006670820B2 discloses a kind of method and instrument that is used for semiconductor material and the detection of device electroluminescence characters.It detects principle is that upper and lower surface at led chip applies exciting light, makes in p district in the PN junction structure and the n district and produces nonequilibrium carrier; Between p district and n district, apply a forward biased voltage again, form the traction electric field, attract the hole in p district and the active area of electronics to the centre in n district to move, then in active area generation radiation recombination, produce recombination luminescence, the voltage that is biased is lower than the turn-on threshold of LED, is that exerting an influence of electron-hole pair is less to nonequilibrium carrier, can ignore; Recombination luminescence with light receiving element such as photodiode receiving chip active area, again in conjunction with the absorption coefficient that excites light intensity and chip, calculate the concentration of photo-generated carrier, be combined with the recombination luminescence amount in source region and actual light and inject and arrive the carrier concentration of active area, just can quantitative test go out the electroluminescent properties of the led chip of surveying.This detection belongs to chip-scale and detects, and needs direct contact chip to apply bias voltage.
Chinese invention patent application 02123646.1 discloses a kind of LED epitaxial wafer electroluminescent nondestructive detection method.This Invention Announce detects for carrying out electroluminescence, settle two electrodes on the epitaxial wafer surface, one is fixing negative electrode (connecing power cathode), it two is a positive electrode, one high-voltage constant current source is added between two electrodes, by positive electrode is moved the detection of finishing whole epitaxial wafer luminous mass from the teeth outwards, obtain the electroluminescence quality of epitaxial wafer full wafer.Can also obtain very important electrical parameter for the LED epitaxial wafer such as forward conduction voltage, reverse leakage current by this method.In addition, Chinese invention patent application 01112096.7 discloses a kind of method and apparatus of verifying quality of semiconductor substrate.With a kind of exciting light intermittent irradiation surface of semiconductor chip to be measured, thereby bring out the photoluminescence of semiconductor chip, change the photoluminescence intensity of substrate into electric signal, again by receiving and detection means receives and detects.The variation of the photoluminescence mean intensity by epitaxial wafer obtains the damping time constant of photoluminescence, thereby estimates impurity and defective in the semiconductor chip exactly.These two patents all are the detections of carrying out at the LED epitaxial wafer.
Chinese invention patent 200510034935.2 discloses a kind of automatization test system and method for light emitting diode.The electrical parameter of the current/voltage of the LED finished product after this proving installation can test package be finished, lock stream and optical parametric.
The measurement mechanism of China's utility model patent 02265834.3 disclosed average light-emitting intensity of light-emitting diode tester and Chinese invention patent 02136269.6 disclosed average light-emitting intensity of light-emitting diode then is primarily aimed at the luminous luminosity of LED and tests.These several detection techniques all are to detect at the LED finished product.
Can see that present existing LED detection method and equipment are mainly used in the LED epitaxial loayer and detect and finished product detection.And for the detection of led chip,, cause the pollution even the damage of chip easily because detector probe must contact chip, and test probe this as attrition component, increased production cost, therefore embarrass the LED high volume production process to accept employing.
Summary of the invention
The object of the present invention is to provide a kind of not detection method of the led chip/wafer of direct contact chip, it can be before the led chip encapsulation, before the LED wafer cutting, do not contact led chip/wafer itself and detect the functional status and the performance parameter of led chip/wafer apace.
When rayed on PN junction, energy can excite intrinsic to absorb greater than the photon of energy gap, produces electron hole pair on the both sides of knot.Because there is stronger built in field in the PN junction barrier region, the photoproduction minority carrier on knot both sides is subjected to this effect, moves to the other side's region direction separately.The electronics in p district is to the motion of n district, and the hole in n district has reduced the potential barrier of PN junction to the motion of p district, so form the photoproduction electromotive force at the PN junction two ends, this is the photovoltaic effect of PN junction.When PN junction was in open-circuit condition always and is subjected to rayed, photogenerated charge can be accumulated in the barrier region, made PN junction show capacitance characteristic.The reduction of potential barrier has destroyed original balance between inner charge carrier diffusion motion of PN junction and the drift motion.When the diffusion current density of the flow currents density of photo-generated carrier and majority carrier equated, stable electric potential difference V was set up on the PN junction both sides
Oc, at this moment, the generation rate of photo-generated carrier equals the recombination rate of electron hole pair.If illumination do not stop, photo-generated carrier constantly produces, and electron hole pair also can be constantly compound, compoundly will cause the luminous of LED PN junction.Therefore under the static light irradiation, as long as illumination does not stop, PN junction has lasting autoluminescence.Yet the electromotive force that illumination produces is limited all the time, and as if the dead band voltage less than diode, forward current is very little, and the luminous intensity of LED will be very weak also, may not be detected.According to the voltage-current characteristic of PN junction, after forward bias was greater than threshold value (equaling the dead band magnitude of voltage), its forward current (how sub-current density) increased with the bias voltage index.If constant light is shone the dc offset voltage of the photoproduction electromotive force of generation as LED, and utilize an alternating magnetic field to provide a little alternating voltage to LED, then the peak value of how sub-diffuse flow will improve greatly, and corresponding luminous peak strength also can strengthen greatly.And the interchange intervention by alternating magnetic field can produce the luminous of alternation, can distinguish mutually with exciting light (direct current) on frequency.
On the other hand, if PN junction is subjected to the pulsed light irradiation, principle of luminosity according to the LED PN junction, in the moment that illumination finishes, the photoproduction electromotive force will fade away, and the electric charge of accumulating can spread, form dissufion current, be equivalent to PN junction capacitance discharges process, have the compound of electron-hole pair in this transient process, therefore can produce luminous.Because the process of discharge is extremely short, this luminescence process is the process of a transient state.
According to the lighting function of PN junction photoelectric characteristic and LED PN junction, the autoluminescence that the photovoltaic effect that takes place on the PN junction of led chip by detection illumination causes realizes the detection to led chip functional status and performance parameter just in the present invention.
The present invention is achieved in that a kind of non-contact detection method of led chip/wafer, it is characterized in that: it is radiated on the PN junction of led chip/wafer to be measured by detecting control and signal acquisition process unit controls light emitted exciting light beam, and photoelectric commutator detects the PN junction of LED because the autoluminescence that illumination produces realizes the detection of led chip/wafer.
Specifically, a kind of non-contact detection method of led chip/wafer, it is characterized in that: it is radiated on the PN junction of led chip/wafer to be measured by detecting control and signal acquisition process unit controls light emitted exciting light beam, the autoluminescence that forms on the PN junction is assembled to photoelectric commutator by the convergent lens group, photoelectric commutator converts light signal to electric signal, sends into detection control and signal acquisition process unit and handles the detection that realizes led chip/wafer.
Above-mentioned light source is the led light source the same with LED to be measured or wavelength all light sources less than LED wavelength to be measured.
The present invention gives a kind of detection method, just in the said method, in illumination, also described PN junction is placed alternating magnetic fields, the alternation autoluminescence that on PN junction, forms, assembled to photoelectric commutator by the convergent lens group, photoelectric commutator converts light signal to electric signal again, sends into described detection control and signal acquisition process unit and handles the detection that realizes led chip.
Wherein, exciting light is a static light; The alternating magnetic field generator of above-mentioned generation alternating magnetic field is electrically connected with above-mentioned detection control and signal acquisition process unit.
The present invention provides a kind of non-contact detection method of led chip again, its characteristics are: it is by detecting the more than half lens combination of control and signal acquisition process unit controls light emitted exciting light beam elder generation's transmission, be radiated at again on the PN junction of led chip to be measured, semi-transparent/half anti-mirror group reflexes to the convergent lens group with the spontaneous transient state light that forms on the PN junction again, the convergent lens group again with beam convergence to photoelectric commutator, photoelectric commutator converts light signal to electric signal, sends into detection control and signal acquisition process unit and handles the detection that realizes led chip.
Wherein, exciting light beam is a pulsed light.
The beneficial effect that the present invention has is:
1, the present invention can detect the PN junction functional status of led chip/wafer.
When led chip/wafer PN junction is in open-circuit condition, when the PN junction of LED is subjected to rayed, if the PN junction function is normal, the athletic meeting that is accompanied by photo-generated carrier produces the diffusion motion of majority carrier, the electronics that is in excited state moved in semiconductor after a period of time, get back to lower energy state again, and the compound of electronics-hole taken place.For LED, in recombination process, electronics mainly discharges unnecessary energy with luminous form.So whether whether produce autoluminescence by detecting the LED PN junction under illumination, it is normal to detect the PN junction function.
2, the present invention can not contact the detection of led chip/wafer realization to led chip/wafer performance parameter.
When the LED PN junction was in open-circuit condition always and is subjected to rayed, photogenerated charge can be accumulated in the barrier region, makes PN junction show capacitance characteristic.When illumination finishes, no longer include photo-generated carrier and diffusion motion thereof, the balance of the diffusion of majority carrier and photo-generated carrier motion is broken in the PN junction, the photoproduction electromotive force will fade away, charges accumulated can spread, and forms dissufion current, is equivalent to PN junction capacitance discharges process, still there be the compound of electronics-hole in this transient process, therefore produce luminous.Luminous intensity is relevant with the discharge current size.Electric current is big more, and is then luminous strong more.Because the junction capacity charges accumulated is limited, discharge process is a transient state, thus luminous also be transient state.Detect the transient state luminescence process of LED PN junction in discharge process, also can detect the performance parameter of LED, as the function of PN junction normally whether, the correlation parameter of PN junction and the luminescence efficiency of PN junction etc.
Description of drawings
Fig. 1 is the theory diagram of the embodiment of the invention 1 non-contact detection method;
Fig. 2 is the theory diagram that detects control and signal acquisition process unit among Fig. 1;
Fig. 3 is a kind of enforcement circuit of light source driving circuit among Fig. 2;
Fig. 4 is the theory diagram of the embodiment of the invention 2 non-contact detection methods;
Fig. 5 is the theory diagram of the embodiment of the invention 4 non-contact detection methods.
Embodiment
The invention will be further described below in conjunction with drawings and Examples, but the present invention is not limited to this.
Embodiment 1: referring to Fig. 1, a kind of non-contact detection method of led chip, it is characterized in that: it is radiated on the PN junction 1 of led chip 2 to be measured by detection control and signal acquisition process unit 9 control light sources, 7 emission exciting light beams 4, the autoluminescence 3 that forms on the PN junction 1 is assembled to photoelectric commutator 8 by convergent lens group 6, photoelectric commutator 8 converts light signal to electric signal, sends into to detect control and the detection that realizes led chip is handled in signal acquisition process unit 9.
Above-mentioned exciting light beam 4 can be a static light, also can be pulsed light.
Referring to Fig. 2, detection control that this example adopted and signal acquisition process unit comprise signal conditioning circuit, mould/number conversion circuit, CPU, display, light source control Waveform generating circuit and light source driving circuit, and wherein the output terminal of signal conditioning circuit links to each other with the input end of mould/number conversion circuit A/D; The output terminal of mould/number conversion circuit A/D links to each other with the input end of CPU; The output terminal of CPU links to each other with the input end of mould/number conversion circuit A/D, light source control Waveform generating circuit and display respectively; The output terminal of light source control Waveform generating circuit links to each other with the input end of light source driving circuit.During work, signal conditioning circuit is connected with photoelectric commutator, and light source driving circuit control light source produces excitation light (static light or pulsed light) and is radiated on the PN junction of led chip.
Referring to Fig. 3, it is the concrete light source driving circuit that provides in this example; Signal conditioning circuit in certain above-mentioned detection control and the signal acquisition process unit, mould/number conversion circuit, light source control Waveform generating circuit all can adopt the existing conventional circuit.
Above-mentioned detection control and signal acquisition process unit 9 control light sources, 7 emission exciting light beams 4 (static light) are radiated on the PN junction 1 of led chip 2 to be measured with certain incident angle, this incident angle is selected according to the radius of convergent lens, incident beam should be avoided being mapped on the convergent lens, most of light beam is becoming reflected light 5 after the effect on the described chip 2, the part luminous energy that described chip 2 is advanced in transmission makes the PN junction 1 of described led chip that photovoltaic effect take place, form the photoproduction electromotive force, the photoproduction electromotive force reduces potential barrier, quicken the diffusion motion of majority carrier in the PN junction, cause compoundly, form luminous.Convergent lens group 6 assembles the autoluminescence 3 of PN junction 1 to photoelectric commutator 8, photoelectric commutator 8 converts light signal to electric signal and sends into to detect in control and the signal acquisition process unit 9 and analyze: as if the autoluminescence that detects PN junction, then PN junction is intact, otherwise the PN junction function is undesired.
Enter photoelectric commutator 8 for fear of reflected light 5, the detection of autoluminescence 3 is caused interference, can select transponder pulse light as exciting light beam 4, like this, when illumination stopped, the electric charge that is accumulated in the space charge region in the PN junction 1 spread to the knot two ends with discharge type, causes the transient state autoluminescence.Convergent lens group 6 assembles the transient state autoluminescence of PN junction 1 to photoelectric commutator 8, photoelectric commutator 8 converts light signal to electric signal and sends into to detect in control and the signal acquisition process unit 9 and analyze: as if the transient state autoluminescence that detects PN junction, then PN junction is intact, otherwise the PN junction function is undesired.Because the light that needs to gather is transient state light, and light intensity is very weak, for avoiding the interference of exciting light, in case photoelectric commutator 8 is saturated, exciting light source 7 and photoelectric commutator 8 should be with the work of alternation switch state, and exciting light source 7 turn-offs, and photoelectric commutator 8 is just worked.
Certainly, this method also is applicable to the detection of LED wafer.
Embodiment 2: referring to Fig. 2～4, a kind of detection method of led chip, it is characterized in that: it is radiated on the PN junction 1 of led chip 2 to be measured by detection control and signal acquisition process unit 9 control light sources, 7 emission exciting light beams 4, in the time of illumination, described PN junction is placed alternating magnetic fields 11, the alternation autoluminescence 3 that forms on the PN junction 1 is assembled to photoelectric commutator 8 by convergent lens group 6, photoelectric commutator 8 converts light signal to electric signal, sends into described detection control and signal acquisition process unit 9 and handles the detection that realizes led chip.
Exciting light is a static light in this example; The alternating magnetic field generator 10 of above-mentioned generation alternating magnetic field is electrically connected with above-mentioned detection control and signal acquisition process unit 9.
Above-mentioned detection control and signal acquisition process unit 9 control light sources, 7 emission exciting light beams 4 (static light) are radiated on the PN junction 1 of led chip 2 to be measured, most of light beam is becoming reflected light 5 after the effect on the described chip 2, the part luminous energy that described chip 2 is advanced in transmission makes LED PN junction 1 that photovoltaic effect take place, and forms the photoproduction electromotive force.This electromotive force is a DC voltage, as the direct current biasing of PN junction 1.In the time of illumination, alternating magnetic field generator 10 produces an alternating magnetic field 11, and PN junction 1 is placed alternating magnetic field, can produce the induced electromotive force of alternation on PN junction 1, makes PN junction 1 produce alternation autoluminescence 3.Convergent lens group 6 is assembled the alternation autoluminescence 3 of PN junction 1 to send into to the photoelectric commutator 8 and is detected control and signal acquisition process unit 9 is handled.Because exciting light is a static light, and the autoluminescence of PN junction is an alternation light, therefore be easy to handle.If detect the spontaneous alternation light of PN junction, then PN junction is intact, otherwise the PN junction function is undesired.
Certainly, this method also is applicable to the detection of LED wafer.
Embodiment 3: referring to Fig. 1～4, a kind of detection method of LED wafer, it is identical with embodiment 1 and 2, different is that it is radiated on all PN junctions of LED wafer to be measured by detection control and signal acquisition process unit 9 control light sources, 7 emission exciting light beams 4, and the face array optical detection device of employing routine is as photoelectric commutator.If detect the autoluminescence of PN junction, then PN junction is intact, otherwise the PN junction function is undesired.
Embodiment 4: referring to Fig. 1～3, a kind of detection method of LED wafer, it is identical with embodiment 1, and different is that it is radiated on each PN junction of LED wafer one by one by detection control and 9 control light sources, 7 emission exciting light beams, 4 sequential scannings of signal acquisition process unit.If detect the autoluminescence of PN junction, then PN junction is intact, otherwise the PN junction function is undesired.
Embodiment 5: referring to Fig. 2,3 and 5, a kind of detection method of led chip, its characteristics are: it by detect control and 9 control light sources, 7 emission exciting light beams, 4 transmissions of signal acquisition process unit semi-transparent excessively/anti-mirror group 12 partly, be radiated on the PN junction 1 of led chip 2 to be measured, semi-transparent/half instead/half anti-mirror reflexes to convergent lens group 6 with the spontaneous transient state light 3 that forms on the PN junction 1 again for 12 groups, convergent lens group 6 again with beam convergence to photoelectric commutator 8, photoelectric commutator 8 converts light signal to electric signal, sends into to detect control and the detection that realizes led chip is handled in signal acquisition process unit 9.
Semi-transparent/half anti-mirror group 12 that above-mentioned detection control and signal acquisition process unit 9 control light sources 7 are launched exciting light beam 4 (pulsed light) vertical incidence, transmission is semi-transparent excessively/and the light beam vertical irradiation of half anti-mirror group 12 is on the PN junction 1 of led chip 2, the part luminous energy that chip 2 is advanced in transmission makes the PN junction 1 of described led chip that photovoltaic effect take place, and forms the photoproduction electromotive force.When illumination stopped, the electric charge that is accumulated in the space charge region in the PN junction 1 spread to the knot two ends with discharge type, causes that transient state is luminous.Semi-transparent/half anti-mirror group 12 reflexes to convergent lens group 6 with the spontaneous transient state light of PN junction 1, convergent lens group 6 again with beam convergence to photoelectric commutator 8, photoelectric commutator 8 is transformed into into electric signal with light signal and sends into analyzing and processing in detection control and the signal acquisition process unit 9, if detect the autoluminescence transient state light of PN junction, then PN junction is intact, otherwise the PN junction function is undesired.
Claims (3)
1, a kind of non-contact detection method of led chip, it is characterized in that: it by detect the transmission of control and signal acquisition process unit (9) control light sources (7) emission exciting light beam (4) semi-transparent excessively/anti-mirror group (12) partly, be radiated on the PN junction (1) of led chip to be measured (2), semi-transparent/half anti-mirror group (12) goes up the spontaneous transient state light (3) that forms with PN junction (1) again and reflexes to convergent lens group (6), convergent lens group (6) again with beam convergence to photoelectric commutator (8), photoelectric commutator (8) converts light signal to electric signal, sends into detection control and signal acquisition process unit (9) and handles the detection that realizes led chip.
2, the non-contact detection method of led chip as claimed in claim 2 is characterized in that: described exciting light beam (4) is a pulsed light; Described detection control and signal acquisition process unit (9) control light sources (7) emission exciting light beam (4) vertical incidence is semi-transparent/half anti-mirror group (12), and transmission is semi-transparent excessively/and the light beam vertical irradiation of half anti-mirror group (12) is on the PN junction (1) of described led chip to be measured (2).
3, the non-contact detection method of led chip as claimed in claim 1 or 2 is characterized in that: described detection control and signal acquisition process unit comprise signal conditioning circuit, mould/number conversion circuit, CPU, display, light source control Waveform generating circuit and light source driving circuit; Wherein the output terminal of signal conditioning circuit links to each other with the input end of mould/number conversion circuit; Mould/the output terminal of number conversion circuit links to each other with the input end of CPU; The output terminal of CPU links to each other with the input end of mould/number conversion circuit, light source control Waveform generating circuit and display respectively; The output terminal of light source control Waveform generating circuit links to each other with the input end of light source driving circuit; During work, signal conditioning circuit is electrically connected with photoelectric commutator, and light source driving circuit control light source produces exciting light beam (4) and is radiated on the PN junction (1) of led chip to be measured (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910138900 CN101581756A (en) | 2007-08-03 | 2007-08-03 | Non-contact detection method of LED chip |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200910138900 CN101581756A (en) | 2007-08-03 | 2007-08-03 | Non-contact detection method of LED chip |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200710092521A Division CN100582802C (en) | 2007-08-03 | 2007-08-03 | LED chip/ wafer non-contact type check-up method |
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| CN101581756A true CN101581756A (en) | 2009-11-18 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2546634A1 (en) * | 2011-07-14 | 2013-01-16 | Dainippon Screen Mfg., Co., Ltd. | Inspection apparatus and inspection method |
| CN103018256A (en) * | 2012-12-13 | 2013-04-03 | 清华大学深圳研究生院 | LED (light-emitting diode) defect detecting system |
| CN108181566A (en) * | 2017-12-29 | 2018-06-19 | 重庆锐虎光电科技有限公司 | The quick detection recognition method of LED luminescence chips |
| CN109490750A (en) * | 2018-09-30 | 2019-03-19 | 广州市鸿利秉光电科技有限公司 | A kind of instrument and method detecting LED chip |
| CN110361644A (en) * | 2019-08-22 | 2019-10-22 | 厦门乾照光电股份有限公司 | A kind of detection device and method of LED chip electric property |
-
2007
- 2007-08-03 CN CN 200910138900 patent/CN101581756A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2546634A1 (en) * | 2011-07-14 | 2013-01-16 | Dainippon Screen Mfg., Co., Ltd. | Inspection apparatus and inspection method |
| US8872114B2 (en) | 2011-07-14 | 2014-10-28 | Dainippon Screen Mfg. Co., Ltd. | Inspection apparatus and inspection method |
| CN103018256A (en) * | 2012-12-13 | 2013-04-03 | 清华大学深圳研究生院 | LED (light-emitting diode) defect detecting system |
| CN103018256B (en) * | 2012-12-13 | 2014-08-13 | 清华大学深圳研究生院 | LED (light-emitting diode) defect detecting system |
| CN108181566A (en) * | 2017-12-29 | 2018-06-19 | 重庆锐虎光电科技有限公司 | The quick detection recognition method of LED luminescence chips |
| CN109490750A (en) * | 2018-09-30 | 2019-03-19 | 广州市鸿利秉光电科技有限公司 | A kind of instrument and method detecting LED chip |
| CN109490750B (en) * | 2018-09-30 | 2021-11-16 | 广州市鸿利秉一光电科技有限公司 | Instrument and method for detecting LED chip |
| CN110361644A (en) * | 2019-08-22 | 2019-10-22 | 厦门乾照光电股份有限公司 | A kind of detection device and method of LED chip electric property |
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Open date: 20091118 |