CN101575211A - High dense (SmxBa<1-x>)B6 polycrystalline block cathode and rapid preparation method thereof - Google Patents
High dense (SmxBa<1-x>)B6 polycrystalline block cathode and rapid preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 6
- 239000000843 powder Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000005245 sintering Methods 0.000 claims abstract description 14
- 238000001704 evaporation Methods 0.000 claims abstract description 11
- 239000000126 substance Substances 0.000 claims abstract description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 229910052786 argon Inorganic materials 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 230000008020 evaporation Effects 0.000 claims description 10
- 229910002804 graphite Inorganic materials 0.000 claims description 10
- 239000010439 graphite Substances 0.000 claims description 10
- 230000035484 reaction time Effects 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 239000012298 atmosphere Substances 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims 1
- 238000012856 packing Methods 0.000 claims 1
- 238000010792 warming Methods 0.000 claims 1
- 239000012071 phase Substances 0.000 abstract description 10
- 229910052761 rare earth metal Inorganic materials 0.000 abstract description 8
- 150000002910 rare earth metals Chemical class 0.000 abstract description 8
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 239000010406 cathode material Substances 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 3
- 239000012295 chemical reaction liquid Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract description 2
- 239000002994 raw material Substances 0.000 abstract 1
- 238000009833 condensation Methods 0.000 description 8
- 230000005494 condensation Effects 0.000 description 8
- 239000013078 crystal Substances 0.000 description 5
- 238000002490 spark plasma sintering Methods 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 239000011858 nanopowder Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 239000012300 argon atmosphere Substances 0.000 description 2
- 239000013590 bulk material Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052580 B4C Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000002083 X-ray spectrum Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000001778 solid-state sintering Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
一种(SmxBa1-x)B6多晶块体阴极及其制备方法属于稀土硼化物材料技术领域。本发明所提供的阴极材料的化学组成为(SmxBa1-x)B6,0.2≤x≤1。本发明首先采用直流电弧蒸发法分别制备SmH2和BaH2纳米粉末,再与原料B粉末按配比混均,采用放电等离子反应液相烧结,压力为40~70MPa,升温速率为90~150℃/min,烧结温度为1300~1500℃,保温5~15min,制得单相、致密的(SmxBa1-x)B6。本发明方法烧结温度低、时间短,工艺简单。A (Sm x Ba 1-x )B 6 polycrystalline block cathode and a preparation method thereof belong to the technical field of rare earth boride materials. The chemical composition of the cathode material provided by the present invention is (Sm x Ba 1-x ) B 6 , 0.2≤x≤1. In the present invention, the SmH 2 and BaH 2 nanometer powders are prepared respectively by direct current arc evaporation method, and then mixed with raw material B powder according to the ratio, and the discharge plasma reaction liquid phase sintering is adopted, the pressure is 40-70MPa, and the heating rate is 90-150°C/ min, the sintering temperature is 1300-1500°C, and the temperature is kept for 5-15 minutes to obtain single-phase and dense (Sm x Ba 1-x )B 6 . The method of the invention has low sintering temperature, short time and simple process.
Description
技术领域 technical field
本发明属于稀土硼化物材料技术领域,具体涉及一种高致密(SmxBa1-x)B6多晶块体阴极材料及其制备方法。The invention belongs to the technical field of rare earth boride materials, and in particular relates to a high-density (Sm x Ba 1-x ) B 6 polycrystalline block cathode material and a preparation method thereof.
背景技术 Background technique
稀土硼化物具有很多优秀的物理化学性能,尤其六硼化镧具有优异的电子发射特性,被广泛应用在各种电子阴极器件领域。随着电子束和离子束技术的飞速发展,对相关阴极材料提出了更高性能的要求。多元稀土硼化物阴极成为了研究热点,(LaBa)B6,(LaEu)B6等阴极材料相继被研制(柳术平,杨庆山,陈卫平,刘甲祥,李中华.稀有金属与硬质合金.2006,34(3):8-11)。稀土硼化物的传统制备方法一般分为两步:第一步先采用硼热、碳化硼还原等方法制备多元稀土硼化物粉末,将粉末经化学方法除杂提纯、水洗、干燥、破碎、筛分等;第二步再采用固相烧结的方法在高温(1800℃~2100℃)条件下,长时间(2~10h)烧结制备多元稀土硼化物块体材料。这些方法的缺点是烧结温度太高,烧结时间长,产品不够致密,产物纯度不高,工艺复杂,因而会严重影响产品的性能。Rare earth borides have many excellent physical and chemical properties, especially lanthanum hexaboride has excellent electron emission characteristics, and is widely used in various electronic cathode devices. With the rapid development of electron beam and ion beam technology, higher performance requirements are put forward for related cathode materials. Multi-element rare earth boride cathodes have become a research hotspot, and cathode materials such as (LaBa)B 6 and (LaEu)B 6 have been developed successively (Liu Shuping, Yang Qingshan, Chen Weiping, Liu Jiaxiang, Li Zhonghua. Rare Metals and Hard Alloys. 2006, 34( 3): 8-11). The traditional preparation method of rare earth borides is generally divided into two steps: the first step is to use boron heating, boron carbide reduction and other methods to prepare multi-element rare earth boride powders, and the powders are purified by chemical methods, washed with water, dried, crushed, and sieved etc.; in the second step, the multi-component rare earth boride bulk material is prepared by sintering for a long time (2-10 hours) at high temperature (1800°C-2100°C) by solid-state sintering. The disadvantages of these methods are that the sintering temperature is too high, the sintering time is long, the product is not dense enough, the product purity is not high, and the process is complicated, which will seriously affect the performance of the product.
发明内容 Contents of the invention
本发明的目的在于解决现有技术的问题,而提供一种高致密(SmxBa1-x)B6多晶块体阴极及其快速制备方法。本发明所提供的方法具有烧结温度低、时间短,工艺简单等优点。The purpose of the present invention is to solve the problems of the prior art, and provide a highly dense (Sm x Ba 1-x ) B 6 polycrystalline block cathode and a rapid preparation method thereof. The method provided by the invention has the advantages of low sintering temperature, short time, simple process and the like.
本发明所提供的一种高致密(SmxBa1-x)B6多晶块体阴极的化学组成为(SmxBa1-x)B6,其中,0.2≤x≤1。The chemical composition of a highly dense (Sm x Ba 1-x ) B 6 polycrystalline block cathode provided by the present invention is (Sm x Ba 1-x ) B 6 , where 0.2≤x≤1.
本发明采用直流电弧蒸发冷凝与放电等离子烧结反应液相烧结相结合的方法制备(SmxBa1-x)B6多晶块体,具体步骤如下:The present invention adopts the method of combining direct current arc evaporation condensation and spark plasma sintering reaction liquid phase sintering to prepare (Sm x Ba 1-x ) B 6 polycrystalline block, and the specific steps are as follows:
1)采用直流电弧蒸发冷凝设备,抽真空至2.0×10-2Pa后,通入体积比为(0~3)∶1的氢气与氩气,总气压为0.1MPa,以单质金属Sm块为阳极,金属W为阴极,阴极与阳极的距离为2~4mm,反应电流为40~60A,反应电压为30~50V,反应时间为45min,制备得到SmH2纳米粉末;1) Using DC arc evaporation and condensation equipment, after vacuuming to 2.0×10 -2 Pa, introduce hydrogen and argon with a volume ratio of (0~3):1, the total pressure is 0.1MPa, and the single metal Sm block is used as Anode, the metal W is the cathode, the distance between the cathode and the anode is 2-4mm, the reaction current is 40-60A, the reaction voltage is 30-50V, the reaction time is 45min, and the SmH 2 nanometer powder is prepared;
2)采用直流电弧蒸发冷凝设备,抽真空至2.0×10-2Pa后,通入体积比为(1~3)∶1的氢气与氩气,总气压为0.1MPa,以单质金属Ba块为阳极,金属W为阴极,阴极与阳极的距离为2~4mm,反应电流为40~60A,反应电压为30~50V,反应时间为40min,制备得到BaH2纳米粉末;2) Using DC arc evaporation and condensation equipment, after vacuuming to 2.0×10 -2 Pa, introduce hydrogen and argon with a volume ratio of (1~3):1, the total pressure is 0.1MPa, and the elemental metal Ba block is used as Anode, the metal W is the cathode, the distance between the cathode and the anode is 2-4mm, the reaction current is 40-60A, the reaction voltage is 30-50V, the reaction time is 40min, and the BaH 2 nanometer powder is prepared;
3)将SmH2纳米粉末、BaH2纳米粉末和B粉末于氧含量低于50ppm以下的氩气气氛中,按原子比x∶(1-x)∶6配料,其中0.2≤x≤1,研磨混匀后,装入石墨模具中;3) Put the SmH 2 nano powder, BaH 2 nano powder and B powder in an argon atmosphere with an oxygen content of less than 50ppm, and mix them according to the atomic ratio x: (1-x): 6, wherein 0.2≤x≤1, grind After mixing, put it into a graphite mold;
4)将石墨模具置于SPS烧结腔体中,在5Pa的真空条件下,加压至40~70Mpa后,以90~150℃/min的升温速率升温至1300~1500℃保温5~15min,随炉冷却至室温,得到(SmxBa1-x)B6多晶块体阴极,其中,0.2≤x≤1(原理如方程式(1)、(2)和(3)中所示)。4) Put the graphite mold in the SPS sintering cavity, pressurize to 40-70Mpa under the vacuum condition of 5Pa, raise the temperature to 1300-1500℃ at a heating rate of 90-150℃/min and keep it warm for 5-15min, then The furnace was cooled to room temperature to obtain (Sm x Ba 1-x )B 6 polycrystalline bulk cathode, where 0.2≤x≤1 (the principle is shown in equations (1), (2) and (3)).
其中,所述的SmH2纳米粉末的粒径为20~80nm;所述的BaH2纳米粉末的粒径为30~80nm。Wherein, the particle diameter of the SmH 2 nanometer powder is 20-80nm; the particle diameter of the BaH 2 nanometer powder is 30-80nm.
xSmH2(s)→xSm(s)+xH2(g) (1)xSmH 2 (s)→xSm(s)+xH 2 (g) (1)
(1-x)BaH2(s)→(1-x)Ba(s)+(1-x)H2(g) (2)(1-x)BaH 2 (s)→(1-x)Ba(s)+(1-x)H 2 (g) (2)
xSm(1)+(1-x)Ba(1)+6B(s)→(SmxBa1-x)B6(s) (3)xSm(1)+(1-x)Ba(1)+6B(s)→(Sm x Ba 1-x )B 6 (s) (3)
与现有技术相比较,本发明具有以下有益效果:Compared with the prior art, the present invention has the following beneficial effects:
本发明方法烧结温度低、时间短,工艺简单,所制备的多元稀土硼化物(SmxBa1-x)B6多晶块体材料致密度高,扫描电镜分析晶粒均匀致密,相对密度经测试高达99.41%,维氏硬度达2450Kg/mm2,经X射线衍射分析为六硼化物纯相。The method of the present invention has low sintering temperature, short time and simple process, and the prepared multi-element rare earth boride (Sm x Ba 1-x ) B 6 polycrystalline bulk material has high density, and the crystal grains are uniform and dense according to scanning electron microscope analysis, and the relative density is obtained by The test is as high as 99.41%, the Vickers hardness reaches 2450Kg/mm 2 , and it is a pure phase of hexaboride through X-ray diffraction analysis.
附图说明 Description of drawings
图1、实施例1制备的(Sm0.2Ba0.8)B6多晶块体阴极的X射线谱图。Fig. 1 , the X-ray spectrum of the (Sm 0.2 Ba 0.8 )B 6 polycrystalline bulk cathode prepared in Example 1.
图2、实施例1制备的(Sm0.2Ba0.8)B6多晶块体阴极的扫描电镜照片Fig. 2. Scanning electron micrographs of the (Sm 0.2 Ba 0.8 ) B 6 polycrystalline bulk cathode prepared in Example 1
图3、实施例3制备的SmB6多晶块体阴极的X射线谱图。Fig. 3, the X-ray spectrogram of the SmB 6 polycrystalline bulk cathode prepared in Example 3.
以下结合附图和具体实施方式对本发明作进一步说明,但本发明的保护范围不限于下述实施例。The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but the protection scope of the present invention is not limited to the following examples.
具体实施方式 Detailed ways
实施例1Example 1
1)采用直流电弧蒸发冷凝设备,抽真空至2.0×10-2Pa后,通入体积比为1∶1的氢气和氩气,总气压为0.1MPa,以单质金属Sm块为阳极,金属W为阴极,阴极与阳极的距离为2~4mm,反应电流为60A,反应电压为30~50V,反应时间为45min,制备得到SmH2纳米粉末;1) Using DC arc evaporation and condensation equipment, after evacuating to 2.0×10 -2 Pa, introduce hydrogen and argon with a volume ratio of 1:1, the total pressure is 0.1MPa, the single metal Sm block is used as the anode, and the metal W As the cathode, the distance between the cathode and the anode is 2-4mm, the reaction current is 60A, the reaction voltage is 30-50V, the reaction time is 45min, and the SmH 2 nanometer powder is prepared;
2)采用直流电弧蒸发冷凝设备,抽真空至2.0×10-2Pa后,通入体积比为1∶1的氢气和氩气,总气压为0.1MPa,以单质金属Ba块为阳极,金属W为阴极,阴极与阳极的距离为2~4mm,反应电流为60A,反应电压为30~50V,反应时间为40min,制备得到BaH2纳米粉末;2) Using DC arc evaporation and condensation equipment, after evacuating to 2.0×10 -2 Pa, introduce hydrogen and argon with a volume ratio of 1:1, the total pressure is 0.1MPa, and the single metal Ba block is used as the anode, and the metal W As the cathode, the distance between the cathode and the anode is 2-4mm, the reaction current is 60A, the reaction voltage is 30-50V, and the reaction time is 40min, and BaH 2 nanometer powder is prepared;
3)将SmH2纳米粉末、BaH2纳米粉末和B粉末于氧含量为10ppm的氩气气氛中,按原子比0.2∶0.8∶6配料,研磨混匀后装入石墨模具中;3) SmH 2 nanometer powder, BaH 2 nanometer powder and B powder are in the argon gas atmosphere that oxygen content is 10ppm, according to atomic ratio 0.2: 0.8: 6 batching, after grinding and mixing, put into graphite mould;
4)将石墨模具置于SPS烧结腔体中,在5Pa的真空条件下,加压40Mpa后,以90℃/min的升温速率升温至1300℃保温15min,随炉冷却至室温,得到(Sm0.2Ba0.8)B6多晶块体阴极。4) Put the graphite mold in the SPS sintering cavity, under the vacuum condition of 5Pa, after pressurizing 40Mpa, raise the temperature to 1300℃ at a heating rate of 90℃/min and keep it for 15min, then cool to room temperature with the furnace to get (Sm 0.2 Ba 0.8 ) B 6 polycrystalline bulk cathode.
所得(Sm0.2Ba0.8)B6多晶块体阴极颜色为灰白色,由XRD谱图(图1)可知,样品主相为BaB6,无杂相,Sm原子固溶在晶格中,无序替代了一部分Ba原子。扫描电镜分析显示晶粒细小均匀,致密,发育良好,晶粒平均尺寸约为0.5~3μm,如图2所示。相对密度经阿基米德排水法测试达98.77%,维氏硬度达2116Kg/mm2。The cathode color of the obtained (Sm 0.2 Ba 0.8 )B 6 polycrystalline block is off-white. From the XRD spectrum (Fig. 1), it can be seen that the main phase of the sample is BaB 6 , without impurity phases, and Sm atoms are solid-dissolved in the crystal lattice, disordered Instead of a part of Ba atoms. Scanning electron microscope analysis shows that the grains are fine and uniform, dense and well developed, with an average grain size of about 0.5-3 μm, as shown in Figure 2. The relative density is 98.77% tested by the Archimedes drainage method, and the Vickers hardness is 2116Kg/mm 2 .
实施例2Example 2
1)采用直流电弧蒸发冷凝设备,抽真空至2.0×10-2Pa后,通入氩气,总气压为0.1MPa,以单质金属Sm块为阳极,金属W为阴极,阴极与阳极的距离为2~4mm,反应电流为50A,反应电压为30~50V,反应时间为45min,制备得到SmH2纳米粉末;1) Using DC arc evaporation and condensation equipment, after vacuuming to 2.0×10 -2 Pa, argon gas is introduced, the total pressure is 0.1MPa, the single metal Sm block is used as the anode, and the metal W is used as the cathode. The distance between the cathode and the anode is 2-4mm, the reaction current is 50A, the reaction voltage is 30-50V, the reaction time is 45min, and the SmH 2 nanometer powder is prepared;
2)采用直流电弧蒸发冷凝设备,抽真空至2.0×10-2Pa后,通入体积比为3∶1的氢气和氩气,总气压为0.1MPa,以单质金属Ba块为阳极,金属W为阴极,阴极与阳极的距离为2~4mm,反应电流为40A,反应电压为30~50V,反应时间为40min,制备得到BaH2纳米粉末;2) Using DC arc evaporation and condensation equipment, after evacuating to 2.0×10 -2 Pa, introduce hydrogen and argon with a volume ratio of 3:1, the total pressure is 0.1MPa, the single metal Ba block is used as the anode, and the metal W As the cathode, the distance between the cathode and the anode is 2-4mm, the reaction current is 40A, the reaction voltage is 30-50V, and the reaction time is 40min, and BaH 2 nanometer powder is prepared;
3)将SmH2纳米粉末、BaH2纳米粉末和B粉末于氧含量为20ppm的氩气气氛中,按原子比0.5∶0.5∶6配料,研磨混匀后装入石墨模具中;3) SmH 2 nanometer powder, BaH 2 nanometer powder and B powder are in the argon gas atmosphere that oxygen content is 20ppm, according to atomic ratio 0.5: 0.5: 6 batching, after grinding and mixing, put into graphite mould;
4)将石墨模具置于SPS烧结腔体中,在5Pa的真空条件下,加压60Mpa后,以120℃/min的升温速率升温至1400℃保温10min,随炉冷却至室温,得到(Sm0.5Ba0.5)B6多晶块体。4) Put the graphite mold in the SPS sintering cavity, under the vacuum condition of 5Pa, after pressurizing 60Mpa, raise the temperature to 1400℃ at a heating rate of 120℃/min and keep it for 10min, then cool to room temperature with the furnace to obtain (Sm 0.5 Ba 0.5 ) B 6 polycrystalline bulk.
所得(Sm0.5Ba0.5)B6多晶块体阴极颜色为灰白色,由X射线衍射谱图可知,样品主相为BaB6,无杂相,Sm原子固溶在晶格中,无序替代了一部分Ba原子。扫描电镜分析显示晶粒均匀致密,发育良好。相对密度经阿基米德排水法测试高达99.37%,维氏硬度达2434Kg/mm2。The cathode color of the obtained (Sm 0.5 Ba 0.5 )B 6 polycrystalline block is off-white. According to the X-ray diffraction spectrum, the main phase of the sample is BaB 6 without impurity phases. A part of Ba atoms. Scanning electron microscope analysis shows that the crystal grains are uniform, dense and well developed. The relative density is as high as 99.37% tested by the Archimedes drainage method, and the Vickers hardness is 2434Kg/mm 2 .
实施例3Example 3
1)采用直流电弧蒸发冷凝设备,抽真空至2.0×10-2Pa后,通入体积比为3∶1的氢气和氩气,总气压为0.1MPa,以单质金属Sm块为阳极,金属W为阴极,阴极与阳极的距离为2~4mm,反应电流为40A,反应电压为30~50V,反应时间为45min,制备得到SmH2纳米粉末;1) Using DC arc evaporation and condensation equipment, after evacuating to 2.0×10 -2 Pa, introduce hydrogen and argon with a volume ratio of 3:1, the total pressure is 0.1MPa, the single metal Sm block is used as the anode, and the metal W As the cathode, the distance between the cathode and the anode is 2-4mm, the reaction current is 40A, the reaction voltage is 30-50V, the reaction time is 45min, and the SmH 2 nanometer powder is prepared;
2)将SmH2纳米粉末和B粉末于氧含量为50ppm的氩气气氛中,按原子比1∶6配料,研磨混匀后装入石墨模具中;2) SmH Nano powder and B powder are mixed in an argon atmosphere with an oxygen content of 50ppm in an atomic ratio of 1:6, ground and mixed, and then packed into a graphite mold;
3)将石墨模具置于SPS烧结腔体中,在5Pa的真空条件下,加压70Mpa后,以150℃/min的升温速率升温至1500℃保温5min,随炉冷却至室温,得到SmB6多晶块体。3) Put the graphite mold in the SPS sintering cavity, under the vacuum condition of 5Pa, after pressurizing 70Mpa, heat up to 1500°C at a heating rate of 150°C/min and keep it for 5min, and cool to room temperature with the furnace to obtain SmB 6 poly crystal block.
所得SmB6多晶块体阴极颜色为蓝色,由X射线衍射谱图(图3)可知,样品主相为SmB6单相。扫描电镜分析显示晶粒均匀致密,发育良好。相对密度经阿基米德排水法测试高达99.41%,维氏硬度达2450Kg/mm2。The cathode color of the obtained SmB 6 polycrystalline block is blue, and the X-ray diffraction spectrum (Figure 3) shows that the main phase of the sample is the SmB 6 single phase. Scanning electron microscope analysis shows that the crystal grains are uniform, dense and well developed. The relative density is as high as 99.41% tested by the Archimedes drainage method, and the Vickers hardness is 2450Kg/mm 2 .
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CN103601207A (en) * | 2013-11-12 | 2014-02-26 | 北京工业大学 | Preparation method of high-purity and high-density YbB6 polycrystalline bulk cathode material |
CN104831352A (en) * | 2015-04-08 | 2015-08-12 | 井冈山大学 | A high-purity and high-density (LaxSm1-x) B6 polycrystalline cathode material and its preparation method |
CN107863412A (en) * | 2017-10-20 | 2018-03-30 | 北京大学 | Photodetector and method of manufacturing the same |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN103601207A (en) * | 2013-11-12 | 2014-02-26 | 北京工业大学 | Preparation method of high-purity and high-density YbB6 polycrystalline bulk cathode material |
CN104831352A (en) * | 2015-04-08 | 2015-08-12 | 井冈山大学 | A high-purity and high-density (LaxSm1-x) B6 polycrystalline cathode material and its preparation method |
CN107863412A (en) * | 2017-10-20 | 2018-03-30 | 北京大学 | Photodetector and method of manufacturing the same |
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