CN101572377B - Photonic crystal resonant cavity, photonic crystal laser and manufacturing method thereof - Google Patents
Photonic crystal resonant cavity, photonic crystal laser and manufacturing method thereof Download PDFInfo
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Abstract
The invention belongs to the technical field of photo communication and laser, relates to a photonic crystal resonant cavity, a photonic crystal laser and a manufacturing method thereof, in particularto a double frequency photonic crystal resonant cavity and a photonic crystal laser as well as a manufacturing method thereof. The photonic crystal resonant cavity provided by the invention is a one- dimensional photonic crystal resonant cavity which comprises a defection layer and is characterized in that the defection layer is filled with anisotropic material. The preferential anisotropic material is single shaft crystal. The invention also provides a photonic crystal laser comprising the photonic crystal resonant cavity and gain medium Er. The invention integrates the advantages of the photonic crystal with the double refraction laser to obtain a resonant cavity and a laser with the properties of small volume, low cost, small frequency difference or large frequency difference, high gainand high Q value.
Description
[technical field]
The invention belongs to optical communication and laser technique field, relate to a kind of photonic crystal resonant cavity, photon crystal laser and manufacture method thereof, be specifically related to a kind of double frequency cross-polarization photon crystal resonant cavity and laser and manufacture method thereof.
[background technology]
Two-frequency laser has a wide range of applications in fields such as optical interference measurement and optical sensings, and two-frequency laser commonly used is based on the He-Ne laser of longitudinal Zeeman effect.But it is theoretical and experimental results show that this laser frequency difference can not be greater than 3MHz.This has seriously limited the measuring speed of two-frequency laser interferometer in metering field.In order to address this problem, there is scientist in common standing wave He-Ne laser chamber, to put into crystalline quartz, add the KD*P electrooptic crystal.Owing to birefringent reason, will produce o light and e light, and its corresponding refractive index is inconsistent, thereby obtains the cross-polarization laser output that frequency difference reaches tens MHz, hundreds of MHz.Because such laser has all utilized birefringence effect, so claim that this class laser is a birefringence double-frequency laser.But because the restriction of the gain bandwidth of He-Ne laser, this type of laser is exported maximum frequency difference and also is no more than 1.5GHz.In order to improve certainty of measurement and speed, tens GHz, hundreds of GHz, even bigger very-large frequency difference two-frequency laser becomes the research focus.
Compare the non-constant width of bright dipping bandwidth of solid state laser with gas laser.Restriction for the gain bandwidth that overcomes the He-Ne laser, someone has proposed a kind of large frequency-difference birefringence double-frequency Nd:YAG laser, the manufacture method of this laser is, in the resonant cavity of laser diode LD pumping Nd:YAG solid state laser, insert a multifunctional element-crystalline quartz F-P etalon that integrates longitudinal mode selection and longitudinal mode splitting.Because of there being birefringence effect in the chamber, each laser longitudinal mode splitting is two mutually orthogonal linearly polarized modes, i.e. o mould and e mould; Equally, the very big peak of unique transmission of Nd:YAG laser gain bandwidth range internal standard tool also is divided into two, and promptly is split into o peak and e peak.Make an o mould be positioned at the summit place at o peak, and make an e mould be positioned at the summit place at e peak, thereby avoid mode competition, running when can realize o mould and e mould.
This method is specially: with thickness is 0.645mm, cutting angle (angle between the optical axis of crystal and plane of crystal normal) is 10 ° of crystalline quartz F-P etalons, place the chamber long in the Nd:YAG laserresonator of 40mm, inclination angle by the fine setting etalon, make o mould e mould avoid mode competition, obtained the output of vibrating simultaneously of two longitudinal modes, its frequency difference is about 2GHz.
The benefit of the method is to add that at original laser the F-P etalon gets final product.But its shortcoming is, require laser cavity long very short in some fields of measurement, and the long continuous shortening in chamber will make laser increased by the influence of ambient temperature, and stability is with variation.Such laser adopts the F-P structure in addition, mostly is not basic mode resonance, and efficient and Q value are lower.Prior, this class laser volume is big, and structure, preparation complexity and cost height are the difficult problems of avoiding and overcoming, and this has very big restriction to optics to microminiaturized and integrated direction development.
Photonic crystal is that high dielectric constant and low dielectric constant medium are arranged the artificial material that forms in space periodicity, and its lattice constant is the same order of magnitude with the wavelength of work light wave.If in this periodic structure, introduce suitable defective, then can in the forbidden band of photonic crystal, produce the defective mould, form photonic crystal resonant cavity.By suitable resonator design, just can obtain very little laser of size (micron dimension even nanometer scale size) and extremely low threshold light pump power (microwatt power) or not have the laser of threshold value.Around this principle, someone has proposed the double-colored resonant cavity of a kind of New-type photon crystal, its manufacture method is, by in 1-D photon crystal, introducing specific defective, by regulating the thickness and the refractive index size of defect layer, accurately the light of two kinds of specific wavelengths is exported in control, and the light of other wavelength can't form resonance field in this photonic crystal resonant cavity.
This structure as laser resonant cavity, then can further be reduced the volume of solid state laser, and simple in structure, and cost is lower, is beneficial to integrated.Because dwindling of size, corresponding frequency difference will obtain bigger increase.But should be applied in the laser by double-colored resonant cavity, the dual-wavelength laser of generation separates needs additional separation equipment, not as the separation of the such easy realization dual wavelength of biorthogonal polarization laser.In addition, this double-colored resonant cavity adjusting at interval need be regulated defect layer simultaneously to dual wavelength thickness and two parameters of refractive index, comfort level is not enough.More distinct issues are, this two-color laser device is difficult to obtain pattern two bandwidth unanimities, that wavelength difference is little, is basic mode because there is one in such pattern, and another is a higher mode.
[summary of the invention]
Purpose of the present invention is exactly the deficiency that exists in the above-mentioned existing technology in order to solve, and proposes a kind of new double frequency cross-polarization photon crystal resonant cavity and laser and manufacture method thereof.The present invention is by integrating the advantage of photonic crystal and birefringence laser, obtained that volume is little, cost is low, the resonant cavity and the laser of little frequency difference or large frequency-difference, high-gain, high Q value.
A kind of photonic crystal resonant cavity, described photonic crystal resonant cavity is the 1-D photon crystal resonant cavity, and it comprises defect layer, it is characterized in that, and described defect layer is filled with anisotropic material.
The thickness of described defect layer is decided by the refractive index and the operation wavelength of the o light correspondence of propagating in the defect layer, the thickness of this defect layer is to make incident light pass through the thickness that the 1-D photon crystal resonant cavity forms biorthogonal polarization defective mould afterwards, the thickness of described defect layer is less than operation wavelength, under the best circumstances, its value is 1/4 refractive index divided by the defect layer medium of operation wavelength.
Described photonic crystal resonant cavity comprises low refractive index dielectric layer, high refractive index medium layer, and the thickness of described low refractive index dielectric layer and high refractive index medium layer is used to guarantee that operation wavelength is in the forbidden band scope of photonic crystal.
Described operation wavelength is two resonance wavelengths of resonant cavity, and the best is to guarantee one of them resonance wavelength at the center in the forbidden band district of photonic crystal, and promptly operation wavelength is the wavelength of center, the forbidden band correspondence of photonic crystal.
The low refractive index dielectric layer on described defect layer both sides and the periodicity of high refractive index medium layer are 2,3,4,5,6 or 7.
Preferably, periodicity is 2 or 3 or 4 or 5.
Described anisotropic material comprises uniaxial crystal.
Uniaxial crystal is identical with biaxial crystal action principle in the present invention, and described anisotropic material also can be biaxial crystal.
A kind of manufacture method of aforesaid photonic crystal resonant cavity is characterized in that, comprising:
Determine the wave-length coverage of required double frequency ripple, operation wavelength for required double frequency ripple, choose low refractive index dielectric, high refractive index medium and defect layer medium and make up 1-D photon crystal resonant cavity model structure, and the operation wavelength of double frequency ripple is dropped in the forbidden band scope of photonic crystal;
Select the periodicity of low refractive index dielectric layer and high refractive index medium layer repetitive;
Obtain the o optical index parameter of refractive index, high refractive index medium refractive index and the defect layer medium of low refractive index dielectric;
According to the thickness that the refractive index and the operation wavelength of low refractive index dielectric and high refractive index medium are determined low refractive index dielectric layer and high refractive index medium layer, guarantee that operation wavelength is in the scope of forbidden band;
According to the thickness that the o optical index and the operation wavelength of defect layer medium are determined defect layer, form biorthogonal polarization defective mould.
Further, the wavelength of center, the forbidden band correspondence that is photonic crystal of an operation wavelength in the wavelength of described double frequency ripple.
Said method further comprises:
By regulating the adjustment of optical axis deviation angle acquisition to biorthogonal polarization mode frequency difference.
A kind of photon crystal laser that comprises aforesaid photonic crystal resonant cavity is characterized in that, also is doped with gain medium in the anisotropic material in the described defect layer, and the optimum gain medium that mixes at 1.55 μ m communication bands is Er.
A kind of manufacture method of aforesaid photon crystal laser is characterized in that, comprising:
Determine the wave-length coverage of required double frequency ripple, operation wavelength for required double frequency ripple, choose low refractive index dielectric, high refractive index medium and defect layer medium and make up 1-D photon crystal resonant cavity model structure, and the operation wavelength of double frequency ripple is dropped in the forbidden band scope of photonic crystal;
Select the low refractive index dielectric layer on defect layer both sides and the cycle number of plies of high refractive index medium layer;
Obtain the o optical index parameter of low refractive index dielectric refractive index, high refractive index medium refractive index and defect layer medium;
Thickness according to the refractive index and the operation wavelength of low refractive index dielectric and high refractive index medium are determined low refractive index dielectric and high refractive index medium guarantees this operation wavelength in the scope of forbidden band, and described forbidden band scope comprises the gain bandwidth scope of gain media;
According to the thickness that the o optical index and the centre wavelength of defect layer medium are determined defect layer, form biorthogonal polarization defective mould;
By regulating the adjustment of optical axis deviation angle acquisition to biorthogonal polarization mode frequency difference;
Suitable gain media mixes;
Regulate the imaginary values of the gain media correspondence of mixing, realize the gain that waits of biorthogonal polarization defective mould.
Further, the wavelength of center, the forbidden band correspondence that is photonic crystal of an operation wavelength in the wavelength of described double frequency ripple.
Beneficial technical effects of the present invention is,
1. in 1-D photon crystal, introduce anisotropic material and form resonant cavity, can arbitrarily obtain needed frequency difference by adjusting the optical axis deviation angle with biorthogonal polarization defective mould.
2. by integrating the advantage of photonic crystal and birefringence laser, it is little to have obtained volume, and cost is low, the biorthogonal polarized photon crystal resonant cavity of little frequency difference or large frequency-difference.
3. realize the gain that waits of biorthogonal polarization defective mould by the corresponding imaginary values of regulate mixing, guaranteed that two defective moulds can avoid mode competition and amplified simultaneously, obtain the biorthogonal polarization laser of high-gain, high Q value.
[description of drawings]
Fig. 1 is the structural representation of 1-D photon crystal resonant cavity;
Fig. 2 is a schematic diagram for the structure coordinate of 1-D photon crystal resonant cavity;
Fig. 3 is the transmission spectrum of 1-D photon crystal;
Fig. 4 is the variation diagram of the defective mould Wavelength distribution of p light and s light correspondence with optical axis deviation x shaft angle degree θ;
Fig. 5 is the variation relation figure of the gain of defective mould with imaginary part γ;
Fig. 6 is a defect layer doping gain media, γ
E=-0.011182 o'clock, the gain spectrogram of 1-D photon crystal;
[embodiment]
The present invention is applied in the photonic crystal by the cross-polarization splitting principle with birefringence double-frequency laser, designs the tunable biorthogonal polarization laser of the resonant cavity of biorthogonal polarized photon crystal laser of near the micro-dimension that is operated in the communication wavelengths 1.55 μ m, tunable very-large frequency difference and high-gain, high Q value.
The structural model of photonic crystal resonant cavity of the present invention as shown in Figure 1,1-D photon crystal resonant cavity model structure is (AB)
NC (BA)
NThe periodicity of N repeateding unit, choose optimal value N=3 in the present embodiment, the solid line strip is represented low refractive index dielectric, and the dotted line strip is represented high refractive index medium, it is the anisotropic material dielectric layer that middle black entity is represented defect layer, all is made as harmless, no chromatic dispersion, nonmagnetic medium.Described low refractive index dielectric is the MgO crystal, and high refractive index medium is the GaAs crystal, for the wavelength X of required double frequency
1And λ
2, the high refractive index medium parameter is n
b, the low refractive index dielectric parameter is n
a, get L
b=λ
c/ (4n
b), L
a=λ
c/ (4n
a), so just guaranteed the λ in the described operation wavelength
1Equal the center λ in the forbidden band of photonic crystal
c,, thereby obtain higher Q value and gain, and the forbidden band scope of described photonic crystal comprises the gain bandwidth scope of gain media.
Described defect layer anisotropic material is a uniaxial crystal, optical axis as shown in Figure 2, two main shaft refractive indexes are respectively n
o, n
e, L
d=λ
c/ (4n
o), thereby guaranteed that light wave is through forming biorthogonal polarization defective mould behind the defect layer.
Refractive index parameter through measuring MgO crystal and GaAs crystal is as follows: n
a=1.735, n
b=4.02, as operation wavelength λ
cDuring=1.55 μ m, L
a=λ
c/ (4n
a)=0.2233 μ m, L
b=λ
c/ (4n
b)=0.0964 μ m.Described defect layer uniaxial crystal is Ca
5(PO4)
3Cl crystal, wherein n
o=1.65, n
e=1.647, defect layer width L
d=λ
c/ (4n
o)=0.2348 μ m.
When making this photonic crystal resonant cavity, choose low refractive index dielectric MgO crystal, high refractive index medium GaAs crystal and defect layer medium Ca
5(PO4)
3The Cl crystal is made 1-D photon crystal resonant cavity model structure;
Selecting the periodicity of low refractive index dielectric and high refractive index medium repetitive is 3.
Obtain low refractive index dielectric, high refractive index medium refractive index parameter is respectively: 1.735 and 4.02;
For required double frequency ripple wavelength X
1And λ
2, choose one of them wavelength X
1=λ
2=1.55 μ m;
Refractive index parameter and λ according to MgO crystal and GaAs crystal
1=1.55 μ m determine that the thickness of low MgO crystal and GaAs crystal is respectively 0.2233 μ m and 0.0964 μ m, guarantee that this operation wavelength 1.55 μ m are in the center, forbidden band of photonic crystal, and the forbidden band scope of photonic crystal comprises the gain bandwidth scope of gain media.
Light is decomposed, resolve into o light and e light, as shown in Figure 2.Measure Ca
5(PO4)
3Cl crystal o optical index is 1.65, Ca
5(PO4)
3The refractive index of Cl Kristall light is 1.647;
According to Ca
5(PO4)
3The o optical index 1.65 and the λ of Cl crystal
1=λ
c=1.55 μ m determine Ca
5(PO4)
3Cl crystal width is 0.2348 μ m, forms biorthogonal polarization defective mould.
The present invention also provides a kind of double frequency cross-polarization photon crystal laser, and described photon crystal laser comprises aforesaid photonic crystal resonant cavity, also comprises gain media, and described gain media is entrained in uniaxial crystal Ca
5(PO4)
3Among the Cl, described gain media is Er, by regulating the frequency difference that the optical axis deviation angle obtains maximum frequency difference interval and arbitrarily needs, by the gain media Er of doping suitable concn in uniaxial crystal, obtains the equal gain of biorthogonal polarization defective mould.Its manufacture method step is specific as follows:
Determine λ
1=λ
c=1.55 μ m choose low refractive index dielectric MgO crystal and high refractive index medium GaAs crystal, and its refractive index is respectively n
a=1.735, n
b=4.02, the thickness L of low refractive index dielectric layer
a=λ
c/ (4n
a)=0.2233 μ m, the thickness L of low refractive index dielectric layer
b=λ
c/ (4n
b)=0.0964 μ m.Thereby guarantee that 1.55 μ m are in the center of the forbidden band scope of photonic crystal, the forbidden band scope of described photonic crystal comprises gain bandwidth scope 1.45 μ m～1.65 μ m of Er.
Determine optical axis deviation angle θ by the actual needs frequency difference, thereby obtain our needed frequency difference.The θ adjustable range is that 0 °～90 ° the present invention program get θ=0, wavelength interval Δ λ=0.0016 μ m, and corresponding frequency interval Δ ν=199.8GHz is maximum (frequency difference is 0 during in θ=90 °, is minimum value).
Choose suitable doping, the imaginary values that just gains γ
EThereby, guarantee that the pairwise orthogonal polarization mode is avoided mode competition and resonance simultaneously.The gain imaginary values γ that waits of the present invention
E=-0.011182, wait gain imaginary part adjustable range Δ γ=1.0164 * 10
-6, wait yield value G
E=6.0649 * 10
5, wait the Q of gain place defective mould
E=6.7947 * 10
4
The present invention also to the adjusting of orthogonal polarization mode division, biorthogonal polarization defective mould frequency difference and biorthogonal polarization mode etc. gain realization study:
The main shaft coordinate as shown in Figure 2, incident light is to depart from the angle of polarization vertical incidence of 45 ° on x axle, i.e. θ
0=0, i
s=i
p=0.5.
Can obtain its transmission spectrum as shown in Figure 3, T by calculating
sRepresent s optical transmission spectrum, T
PRepresent p optical transmission spectrum, in calculating, photolysis become p light (polarization direction is on the xoz plane, corresponding to the e light of the propagation in the anisotropic medium) and s light (polarization direction is at the y direction of principal axis, corresponding to the o light of propagating in the anisotropic medium).
Have said structure to form two defective moulds as seen from Figure 3, and its polarization is mutually orthogonal.The reason that produces two mutually orthogonal polarization defective moulds is, defect layer is the uniaxial anisotropy crystal, and its refractive index to the light wave of different polarization direction is different.This structure is equivalent to have simultaneously two kinds of different defectives, and a kind of refractive index of defect layer is the refractive index of o light, and it is the light wave (s light just) of y axle corresponding to the polarization direction; The refractive index of alternative defect layer correspondence is the refractive index of e light, and it is a light wave (p light just) on the xoz plane corresponding to the polarization direction.Owing to be equivalent to have two kinds of defect layers to exist simultaneously, so formed two defective moulds.Because the refractive index of e light correspondence is less than the refractive index of o light correspondence, can readily appreciate that by perturbation method the defective of e light correspondence touches the wavelength that wavelength is touched less than the defective of o light correspondence.If in laser resonant cavity, just can obtain the defective mould of two different wave lengths of cross-polarization each other simultaneously to this structure applications.
In real work, often need to obtain different wave length defective mould at interval, such as in the micro-displacement measurement process, often need the light of two kinds of different frequencies, needed difference on the frequency is also different under different situations.According to the characteristics of anisotropic medium, can the dielectric tensors of medium be changed by the orientation that changes optical axis, and then change the refractive index of o light and e light correspondence, finally make the defective mode spacing change.
Coordinate system as shown in Figure 2, initial optical axis is in the x direction of principal axis, and around y axle rotation optical axis, the dextrorotation gyration is for just, counterclockwise for negative.According to the symmetry of structure, when the optical axis that draws departed from the x direction of principal axis clockwise, other parameter was identical with Fig. 3, and the defective mould Wavelength distribution of pairwise orthogonal polarization with the variation of deviation angle θ as shown in Figure 4.
The defective mould wavelength X of s light correspondence as seen from Figure 4
sBe in 1.55 μ m places always, and the defective mould wavelength X of e light correspondence
pAlong with the more and more close λ of the increase of θ
s, finally the defective mould corresponding with o light overlaps fully in 90 °.Wherein maximum frequency difference is at interval at θ=0 place, and the wavelength interval is Δ λ=0.0016 μ m, and corresponding frequency interval is: Δ ν=199.8GHz.Minimum frequency difference ° is located in θ=90 at interval, and the pairwise orthogonal mould overlaps, and is spaced apart 0.So only need realize adjustment by the angle that changes optical axis deviation to the wavelength interval of pairwise orthogonal polarization mode.
In laser, mode competition is a ubiquitous phenomenon.If biorthogonal polarization defective mould do not have equal gain, be difficult to then guarantee that the biorthogonal polarization mode is at laser resonance simultaneously wherein.The present invention has studied the situation of the gain media Er that mixed in anisotropic medium.Near wavelength 1.55 μ m, the approximate and Wavelength-independent of the spontaneous emission spectrum of Er.Because the wave-length coverage of research of the present invention is near the 1.55 μ m, so the present invention does not consider gain with wavelength change, the mode of mixing up gain media is the n in the anisotropic medium
e, n
oAll added an identical imaginary part i γ.By discovering, the gain of two defective mould correspondences is not along with the γ monotone variation, but has maximum, and the γ value of extreme point is respectively: γ
p=-0.01116214, γ
s=-0.01120280, as shown in Figure 5, G wherein
sAnd G
pThe gain of the corresponding defective mould of corresponding s light and p light respectively.
Periodicity at this figure repetitive is got N=3, considers the light vertical incidence, other parameter gain that calculates variation relation figure with imaginary part that remains unchanged.Can know that by Fig. 5 the G-γ of the defective mould of two cross-polarizations each other strivies for survival at intersection point.Therefore, if get cusp γ among the figure
E=-0.011182, two defective moulds will obtain equal gain.The present invention chooses this γ value, and other parameter is the same with Fig. 3, calculates its gain spectral, obtains Fig. 6, and Fig. 6 is defect layer doping gain (activation) medium, γ
E=-0.011182 o'clock, the gain spectrogram of 1-D photon crystal, wherein G represents the gain summation of p light and s light, G
sRepresent s optical transmission rate, G
pRepresent p optical transmission rate.
As seen from Figure 6, two defective moulds obtain equal gain.Therefore in photon crystal laser,, promptly select suitable doping content, can realize gains such as two defective moulds, thereby avoid two situations that the defective mould can't coexist bringing because of mode competition effectively by choosing appropriate imaginary values.Certainly, utilize this characteristic to realize the defective mould of a certain polarization is suppressed equally by change degree of mixing up.In actual conditions, the gain of two defective moulds allows certain difference also can avoid the emergence pattern competition.The gain and the imaginary part of gain place such as getting are G
EAnd γ
EIf two defective moulds are while resonance in laser, the difference that gain allows is G
e-G
o≤ α G
E, then satisfy this inequality the γ span we be defined as γ adjustable range Δ γ.Get α=0.1, as calculated, at said structure parameter medium gain imaginary values γ
E=-0.011182, wait gain imaginary part adjustable range Δ γ=1.0164 * 10
-6, wait yield value G
E=6.0649 * 10
5, wait the Q of gain place defective mould
E=6.7947 * 10
4
Though the present invention has only studied near the communication wavelengths the 1.55 μ m; but cardinal principle of the present invention is to introduce the resonant cavity that anisotropic material forms dual-polarization defective mould in photonic crystal; realize the adjusting of double frequency mould difference by adjusting optical axis and x shaft angle degree; by regulating the gain that waits that the corresponding imaginary values of mixing realizes dual-polarization defective mould; the refractive index of operation wavelength and each dielectric layer has determined the thickness of each dielectric layer; so protection scope of the present invention should only not be confined to the 1-D photon crystal resonant cavity that the foregoing description gives and the model of photon crystal laser, all should be within protection scope of the present invention as long as belong to design of the present invention.
Claims (7)
1. photonic crystal resonant cavity, described photonic crystal resonant cavity is the 1-D photon crystal resonant cavity, comprise defect layer, it is characterized in that, described photonic crystal resonant cavity also comprises the low refractive index dielectric layer, the high refractive index medium layer, the thickness of described low refractive index dielectric layer and high refractive index medium layer is used to guarantee that operation wavelength is positioned at the forbidden band scope, this operation wavelength is two resonance wavelengths of resonant cavity, one of them resonance wavelength is the wavelength of forbidden band district center correspondence, described defect layer is filled with anisotropic material, the thickness of this defect layer is to make incident light pass through the thickness that the 1-D photon crystal resonant cavity forms biorthogonal polarization defective mould afterwards, the thickness of described defect layer is less than operation wavelength, the o optical index product of its thickness and defect layer medium be operation wavelength one of them 1/4.
2. photonic crystal resonant cavity according to claim 1 is characterized in that, the low refractive index dielectric layer on described defect layer both sides and the cycle number of plies of high refractive index medium layer are 2,3,4,5,6 or 7.
3. photonic crystal resonant cavity according to claim 1 is characterized in that described anisotropic material comprises uniaxial crystal.
4. the manufacture method as the arbitrary described photonic crystal resonant cavity of claim 1-3 is characterized in that, comprising:
Determine the wave-length coverage of required double frequency ripple, operation wavelength for required double frequency ripple, choose low refractive index dielectric, high refractive index medium and defect layer medium and make up 1-D photon crystal resonant cavity model structure, and the operation wavelength of double frequency ripple is dropped in the forbidden band scope of photonic crystal;
Select the periodicity of low refractive index dielectric layer and high refractive index medium layer repetitive;
Obtain the o optical index parameter of refractive index, high refractive index medium refractive index and the defect layer medium of low refractive index dielectric;
According to the thickness that the refractive index and the operation wavelength of low refractive index dielectric and high refractive index medium are determined low refractive index dielectric layer and high refractive index medium layer, guarantee that operation wavelength is in the scope of forbidden band;
According to the thickness that the o optical index and the operation wavelength of defect layer medium are determined defect layer, form biorthogonal polarization defective mould.
5. the manufacture method of photonic crystal resonant cavity according to claim 4 is characterized in that, further comprises:
By regulating the adjustment of optical axis deviation angle acquisition to biorthogonal polarization defective mould frequency difference.
6. one kind comprises the photon crystal laser as the arbitrary described photonic crystal resonant cavity of claim 1-3, also be doped with gain medium in the anisotropic material in the described defect layer, it is characterized in that the gain media that mixes at 1.55 μ m communication bands is Er.
7. the manufacture method of a photon crystal laser as claimed in claim 6 is characterized in that, comprising:
Determine the wave-length coverage of required double frequency ripple, operation wavelength for required double frequency ripple, choose low refractive index dielectric, high refractive index medium and defect layer medium and make up 1-D photon crystal resonant cavity model structure, and the operation wavelength of double frequency ripple is dropped in the forbidden band scope of photonic crystal;
Select the low refractive index dielectric layer on defect layer both sides and the cycle number of plies of high refractive index medium layer;
Obtain the o optical index parameter of low refractive index dielectric refractive index, high refractive index medium refractive index and defect layer medium;
Thickness according to the refractive index and the operation wavelength of low refractive index dielectric and high refractive index medium are determined low refractive index dielectric and high refractive index medium guarantees this operation wavelength in the scope of forbidden band, and described forbidden band scope comprises the gain bandwidth scope of gain media;
According to the thickness that the o optical index and the centre wavelength of defect layer medium are determined defect layer, form biorthogonal polarization defective mould;
By regulating the adjustment of optical axis deviation angle acquisition to biorthogonal polarization defective mould frequency difference; Suitable gain media mixes;
Regulate the imaginary values of the gain media correspondence of mixing, realize the gain that waits of biorthogonal polarization defective mould.
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| CN104007489B (en) * | 2014-05-16 | 2016-04-27 | 河南科技大学 | A kind of photonic crystal plated film lens and preparation method thereof |
| CN109323661B (en) * | 2018-12-06 | 2020-06-09 | 湖北科技学院 | High-sensitivity angular displacement sensor based on beam space Gus-Hansen displacement |
| CN112152060B (en) * | 2020-10-30 | 2024-06-07 | 电子科技大学 | Photonic crystal micro laser resonant cavity based on Brewster angle |
| CN113899717B (en) * | 2021-10-11 | 2023-06-13 | 南京信息工程大学 | Air humidity measurement method based on one-dimensional photonic crystal defect mode characteristics |
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Non-Patent Citations (1)
| Title |
|---|
| Ryotaro Ozaki et al.Electrically color-tunable defect mode lasing in one-dimensional photonic-band-gap system containing liquid crystal.《APPLIED PHYSICS LETTERS》.2003,第82卷(第21期),第3593-3595页. * |
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