CN101572096A - Method for optimizing L1<0>-FePt film microstructure - Google Patents

Method for optimizing L1<0>-FePt film microstructure Download PDF

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CN101572096A
CN101572096A CNA2009100742725A CN200910074272A CN101572096A CN 101572096 A CN101572096 A CN 101572096A CN A2009100742725 A CNA2009100742725 A CN A2009100742725A CN 200910074272 A CN200910074272 A CN 200910074272A CN 101572096 A CN101572096 A CN 101572096A
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fept film
former
film
fept
high strength
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CN101572096B (en
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张湘义
李晓红
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Yanshan University
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Yanshan University
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Abstract

The invention discloses a method for optimizing an L1<0>-FePt film microstructure, which adopts a high-pressure technology in the annealing process of a room temperature prepared FePt film in an original state, and the characteristic that high pressure can promote the nucleation of an L1<0> ordered domain and inhibit the growth of the L1<0> ordered domain is utilized; the size of the L1<0> ordered domain in the FePt film is reduced to near 10nm, and the size uniformity of the L1<0> ordered domain is significantly enhanced. The invention reduces the grain size of the FePt film, and effectively optimizes the microstructure of the L1<0>-FePt film. The method adopts the technological parameters: annealing temperature is 400 to 700 DEG C, annealing time is 2 to 200 min, pressure is 0.2 to 1 GPa, and vacuum is p less than 10<-3>Pa. The invention provides basis for the application and the development of the L1<0>-FePt film which is used as magnetic recording material of super-high density.

Description

A kind of optimization L1 0The method of-FePt film microstructure
Technical field
The present invention relates to the magnetic recording media field, specially refer to a kind of optimization method of the most rising super-high density magnetic recording media microstructure.
Background technology
The develop rapidly of digitizing technique needs to transmit, write down a large amount of information.Has L1 0The FePt film of ordered structure is owing to have extra high magnetic anisotropy constant (K u=(4-7) * 10 7Erg/cm 3Thereby) have minimum super paramagnetic critical dimension (2-3nm) and become super-high density magnetic recording media material of new generation.Theoretical prophesy, the magnetic recording density of this dielectric material can surpass 1TB/in 2L1 0The microstructure of-FePt film has fundamental influence to the raising of its magnetic recording density and magnetic property, for the recording density that realizes superelevation and high signal to noise ratio (S/N ratio) L1 0-FePt film need have the extra fine crystallite dimension (<10nm) and grain size be evenly distributed.And the FePt film for preparing under the room temperature has face-centred cubic structure (A1 structure), does not have the magnetic recording function, must it be taken place by the A1 structure to L1 through high annealing (generally being higher than 500 ℃) 0The transformation of ordered structure.Studies show that this process of ordering mainly is subjected to L1 in the FePt film 0Domain growth is controlled in order, and so the annealing of high-temperature will inevitably cause the thick, inhomogeneous of the domain of order, thereby can cause L1 0The abnormality growth of-FePt film crystal grain, finally cause the FePt film to have thick crystallite dimension (20-50nm) and grain size distribution inhomogeneous.Though much orderings that under lower temperature, has promoted the FePt film of research work success, owing to promote FePt film L1 0A lot of methods of ordering all pass through to promote L1 0Domain growth is finished in order, thereby thick, the inhomogeneous key issue that also always is restriction FePt film as application of super-high density magnetic recording media material and development of crystallite dimension.
Summary of the invention
The object of the present invention is to provide a kind of optimization L1 0The method of-FePt film microstructure, this invention utilize high pressure energy to promote L1 by adopt high pressure technique in FePt film annealing process 0Domain of order forming core also suppresses the characteristics of its growth, greatly reduces the crystallite dimension and the L1 of FePt film 0Domain of order size, and significantly improved the homogeneity of this Size Distribution.Effective optimization L1 0The microstructure of-FePt film.
Optimization L1 provided by the present invention 0The processing step that method adopted of-FePt microstructure is:
1, at room temperature, adopting the DC magnetron sputtering system growth components scope on the Si of autoxidation substrate with electromagnet is Fe: Pt=40: 60~60: 40 the former primary state FePt film with unordered A1 structure.
2, prepared former primary state FePt film is faced down put in the high strength graphite sleeve pipe, fill cubic boron nitride and do pressure transmitting medium, after sealing with the graphite capping, with this high strength graphite sleeve pipe that FePt film is housed pack into an internal diameter size equal the graphite bush diameter by in interior former and the former that outer female die set becomes, load onto two to the roof pressure head in high strength graphite sleeve pipe both sides.Be close to placement one temperature thermocouple 9 on the interior former of high strength graphite sleeve pipe, in order to the annealing temperature of in site measurement film, a temperature control thermopair is placed in the position near former on pressure head, in order to the annealing temperature of control FePt film 4.
3, the above-mentioned grinding tool that graphite bush and pressure head are housed is contained in the Gleeble-3500 hot modeling test machine vacuum cavity, fixes with jig, the vacuum of vacuum cavity is evacuated to p<10 -3Pa, by jig by hot modeling test machine to the FePt film 0.2~1GPa that exerts pressure.
4, in the process of pressurization, anneal for FePt film rising temperature to 400~700 ℃, annealing time is 2min~200min; Its temperature is reduced to room temperature, lay down pressure, take out the FePt film.
The invention has the beneficial effects as follows: in the process of FePt film ordering annealing, adopt high pressure technique, because high pressure has the FePt of promotion film L1 0Domain of order forming core also suppresses the effect of its growth, thereby can reduce this film L1 0The size of the domain of order and improve the homogeneity of its Size Distribution; Inhibited owing to high pressure again to atom diffusion, thereby can effectively reduce the crystallite dimension of FePt film, thus improve L1 0The microstructure of-FePt film.The present invention can prepare crystallite dimension tiny (near 10nm) L1 uniformly 0-FePt film.
Description of drawings
Fig. 1 is a kind of optimization L1 0The high pressure annealing device synoptic diagram of-FePt film microstructure method;
Fig. 2 is L1 behind the high pressure annealing 0The size of the domain of order and the degree of order are with the variation relation of pressure;
Fig. 3 is transmission electron microscope dark field image and the bright field image photo and the Size Distribution collection of illustrative plates of FePt film after high pressure (a) and (b) and normal pressure (c), (d) anneal down.
In Fig. 1,1. jig, 2. temperature control thermopair, 3. high strength graphite sleeve pipe, the 4.FePt film, 5. pressure head, 6. in former, 7. outer former, 8. boron nitride pressure transmitting medium, 9. temperature thermocouple, 10. vacuum cavity.
Embodiment
At room temperature, employing magnetron sputtering technique growth components ratio on the Si of autoxidation substrate is 1: 1 a former primary state FePt film 4.To this FePt film at the enterprising horizontal high voltage annealing experiment of Gleeble-3500 hot modeling test machine.Experimental provision as shown in Figure 1.These FePt film 4 faces are placed in the high strength graphite sleeve pipe 3 down, fill cubic boron nitride 8 and do pressure transmitting medium, after sealing with the graphite capping, this high strength graphite sleeve pipe 3 that FePt film 4 is housed internal diameter size of packing into is equaled to load onto two to roof pressure head 5 in high strength graphite sleeve pipe 3 both sides in the former of being made up of interior former 6 and outer former 7 of graphite bush diameter.Adopt these two the pressure head on top vertically put on FePt film 4 surfaces by high strength graphite cover 3 with pressure.Pressure calculates by the load of pressure head 5.Be close to placement one temperature thermocouple 9 on the interior former of high strength graphite sleeve pipe, in order to the annealing temperature of in site measurement film, a temperature control thermopair is placed in the position near former on pressure head, in order to the annealing temperature of control FePt film 4.The above-mentioned grinding tool that high strength graphite cover 3 and pressure head 5 are housed is contained in the vacuum cavity 10 of Gleeble-3500 hot modeling test machine, and fixing with jig 1, vacuum cavity 10 vacuum are evacuated to p<10 -3Pa, by jig 1 by hot modeling test machine to the FePt film 1GPa that exerts pressure.600 ℃ of annealing temperatures, annealing time 30min.
Experimental result shows: L1 behind the 1GPa high pressure annealing 0The size d=24nm[that the size d=12nm of the domain of order is significantly less than the normal pressure annealing back domain of order sees Fig. 2 and Fig. 3 (a), (c)], the (see figure 2) but the degree of order is more or less the same.1GPa high pressure annealing sample L1 0The size of the domain of order is significantly than the even size distribution [seeing Fig. 3 (a), (c) illustration] of normal pressure annealing specimen.And behind the 1GPa high pressure annealing, the FePt film has more tiny, uniform crystallite dimension [see Fig. 3 (b) and (d)].

Claims (1)

1. optimize L1 for one kind 0The method of-FePt film microstructure is characterized in that: the processing step of described method is:
A. at room temperature, adopting the DC magnetron sputtering system growth components scope on the Si of autoxidation substrate with electromagnet is Fe: Pt=40: 60~60: 40 the former primary state FePt film (4) with unordered A1 structure;
B. prepared former primary state FePt film (4) face is put in the high strength graphite sleeve pipe (3) down, fill cubic boron nitride (8) and do pressure transmitting medium, after sealing with the graphite capping, this high strength graphite sleeve pipe (3) internal diameter of packing into is equaled to load onto two to roof pressure head (5) in high strength graphite sleeve pipe (3) both sides in the former of being made up of interior former (6) and outer former (7) of high strength graphite sleeve pipe (3) diameter; Place temperature thermocouple (9) on the interior former of high strength graphite sleeve pipe being close to, in order to the annealing temperature of in site measurement film, temperature control thermopair (2) is placed in the position near former on pressure head, in order to the annealing temperature of control FePt film (4).
C. the above-mentioned grinding tool that high strength graphite sleeve pipe (3) and pressure head (5) are housed is contained in the Gleeble-3500 hot modeling test machine vacuum cavity (10), fixing with jig (1), vacuum cavity (10) vacuum is evacuated to p<10 -3Pa, by jig (1) by hot modeling test machine to the FePt film 0.2~1GPa that exerts pressure.
D. in the process of pressurization, anneal for FePt film (4) rising temperature to 400~700 ℃, annealing time is 2min~200min; Its temperature is reduced to room temperature, lay down pressure, take out FePt film (4).
CN2009100742725A 2009-04-29 2009-04-29 Method for optimizing L1<0>-FePt film microstructure Expired - Fee Related CN101572096B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112305009A (en) * 2020-11-06 2021-02-02 北京石油化工学院 Resistance type high-temperature pressure thermal simulation test device and test method
CN112962122A (en) * 2021-02-01 2021-06-15 浙江工业大学 Preparation method of high-coercivity B-doped FePt film

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112305009A (en) * 2020-11-06 2021-02-02 北京石油化工学院 Resistance type high-temperature pressure thermal simulation test device and test method
CN112305009B (en) * 2020-11-06 2024-01-19 北京石油化工学院 Resistance type high-temperature pressure thermal simulation test device and test method
CN112962122A (en) * 2021-02-01 2021-06-15 浙江工业大学 Preparation method of high-coercivity B-doped FePt film
CN112962122B (en) * 2021-02-01 2022-03-15 浙江工业大学 Preparation method of high-coercivity B-doped FePt film

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