CN101570831B - Large-sized distillation furnace for producing high purity arsenic - Google Patents
Large-sized distillation furnace for producing high purity arsenic Download PDFInfo
- Publication number
- CN101570831B CN101570831B CN2009100329272A CN200910032927A CN101570831B CN 101570831 B CN101570831 B CN 101570831B CN 2009100329272 A CN2009100329272 A CN 2009100329272A CN 200910032927 A CN200910032927 A CN 200910032927A CN 101570831 B CN101570831 B CN 101570831B
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- CN
- China
- Prior art keywords
- distillation
- high purity
- purity arsenic
- chamber
- distillation furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052785 arsenic Inorganic materials 0.000 title claims abstract description 21
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 238000004821 distillation Methods 0.000 title claims abstract description 20
- 239000007769 metal material Substances 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000011229 interlayer Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 17
- 239000000463 material Substances 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000000746 purification Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 16
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 3
- 238000005660 chlorination reaction Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000003245 working effect Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000001458 anti-acid effect Effects 0.000 description 1
- OEYOHULQRFXULB-UHFFFAOYSA-N arsenic trichloride Chemical compound Cl[As](Cl)Cl OEYOHULQRFXULB-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000012084 conversion product Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000001117 sulphuric acid Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
Landscapes
- Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
- Manufacture And Refinement Of Metals (AREA)
Abstract
The invention provides a large-sized distillation furnace for producing high purity arsenic, and relates to production technology for industrialized purification of non-metallic materials, in particular to technology of a distillation furnace for producing ultra-high purity arsenic, which is a basic material for semiconductors. The distillation furnace comprises a sealed distillation chamber made of metallic materials; the distillation chamber is provided with a separate cavity, of which the sandwich is provided with heating plates; the inside of the distillation chamber is provided with a separate layer; and one upper end of the distillation chamber is communicated with a distillation pipe made of the metallic materials. The distillation furnace has the advantages of reasonable structuraldesign, easy production, convenient use, long service life, and convenient mass industrialized production of 7N high-purity arsenic. The heating plates can be independently controlled for heating so as to ensure a temperature equalized thermal field of the distillation and the consistency of product quality.
Description
Technical field
The present invention relates to a kind of industrialization purification production technique of non-metallic material, particularly the production of the ultra-pure arsenic of the semiconductor foundation material technology of distilling furnace.
Background technology
The production method of high purity arsenic has chlorination rectification method, plumbous molten bath subliming method and hydrogen arsenide cracking process at present, and their common defects is a production cost height, little in batches, can not meeting the market requirement.In addition, there is operation cost height again in the chlorination rectification method, produces, unstable product quality fragile with tower, easily produce the arsenic chloride gas leakage in the production process, there is potential safety hazard in production process; Plumbous molten bath subliming method exists the quality can not be up to standard; There is the potential safety hazard of hydrogen arsenide toxic gas leakage in the hydrogen arsenide cracking process.Application number is the defective that the production method of 2006100395410 high purity arsenic has not only overcome above three kinds of methods, also combine the advantage of plumbous molten bath method and chlorination rectifying reduction method, first formation arsenical lead has been proposed, from wherein extracting arsenic with the method for sublimation separation, the acquisition purity that more isolated arsenic distil in hydrogen is the arsenic of 7N again.This method need adopt the quartzy various apparatus of reaction of making, but because quartzy utensil volumetric quantity is little, easily broken, silica tube is because of corrosion-vulnerable in still-process, work-ing life is short, cost is high, so the production method of 2006100395410 high purity arsenic can't be applied to industrialized mass production.
Summary of the invention
The large-sized distillation furnace that is used to produce high purity arsenic that the object of the invention is is good for the supporting a kind of wearing quality of the production method of above high purity arsenic, long service life, adaptation are produced in enormous quantities.
The present invention includes the sealing stilling chamber of making by metallic substance, described stilling chamber is provided with separate space, in described separate space interlayer, hot-plate is set, in described stilling chamber, separate layer is set, be communicated with the still tube that setting is made by metallic substance in a upper end of described stilling chamber.
In clean environment, need are carried out distillatory work in-process material to be divided in each charging tray, each charging tray combination is loaded into each separate layer of large-sized distillation furnace, sealed fire door, stilling chamber is sealed fully, by thermostat each hot-plate of distilling furnace is heated, with different vapour pressures each conversion product in the work in-process is separated and reach the purpose of purification.Work in-process are subjected to thermal distillation, and the high purity arsenic that purity reaches 7N distills out from still tube, just can unload batch can in clean environment at the other end of still tube and carry out discharging.
The present device reasonable in design, be easy to produce, the convenient use, and long service life, be beneficial to the mass industrialized production of 7N high purity arsenic.Each hot-plate can add temperature control respectively, guarantees distillatory samming thermal field, guarantees the consistence of product quality.
In order to make the distillation room temp balanced more, each separate layer back side of the present invention is provided with Thermal couple casing pipe, and Heating element is set respectively in each Thermal couple casing pipe.
Stilling chamber of the present invention is made up of main chamber and fire door.On the basis of all-sealed structure, can take on material by free charging tray again, guaranteed the security and the cleanliness factor of production operation so effectively.
Above-mentioned metallic substance is preferably titanium.
Bring secondary pollution in order to reduce production process, improve the purification rate of arsenic, the present invention must adopt have that density is little, high-low temperature resistant, plasticity is good, physical strength is big, the good metallic substance of antiacid caustic corrosion is made large-sized distillation furnace, at normal temperatures, can do not corroded, have only the concentrated hydrochloric acid, the vitriol oil etc. of hydrofluoric acid, heat just can act on it by dilute hydrochloric acid, dilute sulphuric acid, nitric acid or dilute alkaline soln.Use this metallic substance and can reduce the production cost that arsenic is purified greatly, approximately be quartzy more than 10 times the work-ing life behind the employing novel material, generally not fragile.
Description of drawings
Fig. 1 is a kind of structural representation of the present invention.
Embodiment
As shown in Figure 1, the sealing stilling chamber that the present invention is made up of main chamber 1 and fire door 2, main chamber 1 forms separate space 3 by bilayer structure, and polylith hot-plate 4 is set in separate space 3, and each hot-plate 4 is respectively to be electrically connected and to be arranged on outside thermostat.
Separate layer 5 is set in main chamber 1, and the back side of each separate layer 5 is provided with Thermal couple casing pipe 7, in each Thermal couple casing pipe 7 Heating element is set respectively, and each Heating element is electrically connected with thermostat.1 upper end is communicated with the still tube 6 that setting is made by metallic substance in the main chamber.
Above main chamber 1, fire door 2, separate layer 5, still tube 6 and Thermal couple casing pipe 7 are made with the metal titanium material respectively.
Claims (3)
1. be used to produce the large-sized distillation furnace of high purity arsenic, comprise the sealing stilling chamber of making by metallic substance, described stilling chamber is provided with separate space, in described separate space interlayer, hot-plate is set, in described stilling chamber, separate layer is set, is communicated with the still tube that setting is made by metallic substance in a upper end of described stilling chamber; It is characterized in that described each separate layer back side is provided with Thermal couple casing pipe, is provided with Heating element respectively in each Thermal couple casing pipe.
2. according to the described large-sized distillation furnace that is used to produce high purity arsenic of claim 1, it is characterized in that described stilling chamber is made up of main chamber and fire door.
3. according to claim 1 or the 2 described large-sized distillation furnaces that are used to produce high purity arsenic, it is characterized in that metallic substance is a titanium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100329272A CN101570831B (en) | 2009-06-09 | 2009-06-09 | Large-sized distillation furnace for producing high purity arsenic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100329272A CN101570831B (en) | 2009-06-09 | 2009-06-09 | Large-sized distillation furnace for producing high purity arsenic |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101570831A CN101570831A (en) | 2009-11-04 |
| CN101570831B true CN101570831B (en) | 2010-11-17 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009100329272A Active CN101570831B (en) | 2009-06-09 | 2009-06-09 | Large-sized distillation furnace for producing high purity arsenic |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101570831B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103290237A (en) * | 2013-05-23 | 2013-09-11 | 扬州高能新材料有限公司 | Arsenic lead alloy synthesis and sublimation integral furnace used for producing high-purity arsenic |
| CN103253703A (en) * | 2013-06-06 | 2013-08-21 | 江西海宸光电科技有限公司 | Preparation method and equipment of high-purity arsenic oxide |
-
2009
- 2009-06-09 CN CN2009100329272A patent/CN101570831B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN101570831A (en) | 2009-11-04 |
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Address after: 225123 Shuang Tang Industrial Park, Ganquan, Yangzhou, Jiangsu, Weiyang Patentee after: Yangzhou Zhongtianli New Material Co., Ltd. Address before: 225123 Shuang Tang Industrial Park, Ganquan, Yangzhou, Jiangsu, Weiyang Patentee before: Yangzhou Crown New Materials Co., Ltd. |
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Address after: 225123 flower road, Ganquan double pond Industrial Park, Hanjiang District, Hanjiang, Jiangsu, Yangzhou Patentee after: Yangzhou Zhongtianli New Material Co., Ltd. Address before: 225123 Shuang Tang Industrial Park, Ganquan, Yangzhou, Jiangsu, Weiyang Patentee before: Yangzhou Zhongtianli New Material Co., Ltd. |
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Effective date of registration: 20160715 Address after: 024000 the Inner Mongolia Autonomous Region Chifeng City Linxi Linxi County Industrial Park Patentee after: Inner Mongolia Zhongtian Lixin Mstar Technology Ltd Address before: 225123 flower road, Ganquan double pond Industrial Park, Hanjiang District, Hanjiang, Jiangsu, Yangzhou Patentee before: Yangzhou Zhongtianli New Material Co., Ltd. |
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Effective date of registration: 20200605 Address after: 225123 Shuang Tang Tong Industrial Park, Hanjiang District, Hanjiang, Jiangsu, Yangzhou Patentee after: YANGZHOU ZTL NEW MATERIALS Co.,Ltd. Address before: 024000 the Inner Mongolia Autonomous Region Chifeng City Linxi Linxi County Industrial Park Patentee before: Inner Mongolia Zhongtian Lixin Mstar Technology Ltd. |
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Effective date of registration: 20211008 Address after: 471700 industrial cluster area of Luoning County, Luoyang City, Henan Province (rooms 313 and 315, 3rd floor, No. 1 complex building) Patentee after: Luoning zhongtianli New Material Co.,Ltd. Address before: 225123 Ganquan Shuangtang Industrial Park, Hanjiang District, Yangzhou City, Jiangsu Province Patentee before: YANGZHOU ZTL NEW MATERIALS Co.,Ltd. |