CN101567363B - ballast resistor of bipolar junction transistor emitter - Google Patents
ballast resistor of bipolar junction transistor emitter Download PDFInfo
- Publication number
- CN101567363B CN101567363B CN 200910074716 CN200910074716A CN101567363B CN 101567363 B CN101567363 B CN 101567363B CN 200910074716 CN200910074716 CN 200910074716 CN 200910074716 A CN200910074716 A CN 200910074716A CN 101567363 B CN101567363 B CN 101567363B
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- China
- Prior art keywords
- steady resistance
- bipolar junction
- junction transistor
- transistor emitter
- ballast resistor
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000005540 biological transmission Effects 0.000 claims abstract description 9
- 230000016507 interphase Effects 0.000 claims description 4
- 239000011241 protective layer Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 2
- 229910002113 barium titanate Inorganic materials 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 230000003993 interaction Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000013021 overheating Methods 0.000 abstract 1
- 230000002457 bidirectional effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Bipolar Transistors (AREA)
Abstract
The invention discloses a ballast resistor of a bipolar junction transistor emitter, which belongs to the manufacturing field of transistors and comprises a ballast resistor body, input leads and output leads connected with the ballast resistor body; and the input leads and output leads are arranged in the shape of flat surface and pectination. The key improvements of the invention are characterized in that the output leads are arranged equidistantly while the input leads are arranged by density interaction, thus forming a unidirectional transmission channel of current. The ballast resistor can effectively reduce power consumption and prevent high-power electric appliances from burning out due to overheating, dispensed with changing the basic structure of the electric appliances and the ballast resistor.
Description
Technical field
The invention belongs to transistor arts, particularly the architecture advances of bipolar junction transistor emitter steady resistance.
Background technology
In the use of high-power bipolar junction transistor device, raising along with the device working temperature, the input impedance of device reduces, under the certain situation of applied voltage, can cause the electric current of EB knot to increase, produce a large amount of heats, and then cause the temperature of EB knot further to raise, and forming vicious circle, resulting devices burns because of " heat is run quickly ".For this reason, in the design of high-power bipolar junction transistor,, generally adopt emitter ballast resistance to form Current Negative Three-Point Capacitance for avoiding the generation of this type of phenomenon.Because the existence of steady resistance, when increase tendency appearred in emitter current, the voltage drop on the steady resistance increased, and reduced the EB junction voltage of bipolar junction transistor to a certain extent, thereby emitter current had reduced, the problem of effectively having avoided device to burn.
Tradition, commonly used steady resistance are referring to Fig. 1～Fig. 3, as can be seen: at the bipolar junction transistor emitter steady resistance of connecting, the structure of steady resistance comprises steady resistance body, the input lead and the output lead that are connected with the steady resistance body.In Fig. 1 structure, input lead is parallel relative with the transverse plane of output lead, constitutes current path.Under the certain situation of the distance between the both ends of the surface, the area of end face is more little, and the electric current handling capacity is more little, and along with the development of high frequency bipolar junction transistor, the distance between the adjacent transmission utmost point is more and more littler, the electric current handling capacity worse and worse, power consumption is also increasing.
In Fig. 3 structure, input lead and output lead are equidistant plane pectination and arrange, the electric current that flows out from emitter is diverted to output lead behind input lead, be equivalent to two resistance parallel connections, the electric current handling capacity is stronger, but the metering function of steady resistance is relatively poor, along with the development of high frequency bipolar junction transistor, causes device to burn easily.
Therefore, for the steady resistance of bipolar junction transistor emitter, not only need to consider the current limitation effect of steady resistance, i.e. the size of resistance also needs to consider the electric current handling capacity of steady resistance, i.e. power problems simultaneously.
Summary of the invention
The technical issues that need to address of the present invention are to have now under the constant situation of steady resistance body, the steady resistance of the bipolar junction transistor emitter of a kind of handling capacity that can take into account electric current simultaneously and current limitation effect is provided, and the present invention improves the structure of existing bipolar junction transistor emitter steady resistance.
For addressing the above problem, steady resistance of the present invention comprises steady resistance body, the input lead and the output lead that are connected with the steady resistance body, input lead and output lead are the plane pectination and arrange, crucial improvement is: output lead is equidistantly arranges, input lead is density interphase arranges, and forms the one-way transmission path of electric current.
In the existing technical scheme, the corresponding output lead of input lead, and in the above-mentioned improved plan, article two, corresponding output lead of input lead, therefore, on the steady resistance body, vacate bigger area, and arrange again input lead and output lead.Input lead is density interphase arranges, and output lead is equidistantly arranges, and the distance between input lead and the output lead has increased, and electric current has become one-way transmission by original bidirectional shunt.
Compare with Fig. 3, suppose among Fig. 3 that resistance is R between input lead and output lead
1, electric current is equivalent to two resistance parallel connections by input lead to the bidirectional shunt of output lead, and result in parallel is less than R
1And in the improved technical scheme, the distance between input lead and the output resistance has increased, and the electric current one-way transmission, and its resistance is R
1+ Δ R, obviously, under the constant situation of steady resistance body, steady resistance has increased in the improved plan.
Compared to Figure 1, electric current flows to the situation that the distance of output lead is more or less the same by input lead, and in the improved technical scheme of the present invention, the sectional area that electric current is flowed through has increased, and promptly the handling capacity of electric current increases, and power consumption reduces.
The beneficial effect that adopts the present invention to produce is: under the condition that does not change device and steady resistance basic structure, accomplished guaranteeing under the stronger situation of electric current handling capacity, improved the resistance of steady resistance, promptly effectively reduced power consumption, avoided high power device to burn simultaneously because of " heat is run quickly ".
Description of drawings
Fig. 1 is the structural representation of existing bipolar junction transistor emitter steady resistance;
Fig. 2 is that the A-A of Fig. 1 is to profile;
Fig. 3 is the structural representation of existing bipolar junction transistor emitter steady resistance;
Fig. 4 is a structural representation of the present invention;
Among the figure, 1, input lead; 2, steady resistance body; 3, output lead; E represents emitter; B represents base stage; C represents collector electrode.
Embodiment
Below in conjunction with accompanying drawing the present invention is done and to describe in further detail.
Referring to Fig. 4, the steady resistance of bipolar junction transistor emitter, described steady resistance comprises steady resistance body 2, the input lead 1 that is connected with steady resistance body 2 and output lead 3, input lead 1 and output lead 3 are the plane pectination and arrange, crucial improvement is: output lead 3 is equidistantly arranges, input lead 1 is density interphase arranges, and forms the one-way transmission path of electric current.
Above-described input lead 1 and output lead 3 are sheet metal.
Above-described steady resistance body 2 is a plane resistance.
The surface of above-described steady resistance body 2 is with one deck insulating protective layer.The effect of insulating protective layer: prevent that moisture, static, airborne dust etc. from staining the steady resistance surface, the resistance of steady resistance is changed.When input lead 1, output lead 3 are connected with steady resistance body 2, must remove above-mentioned insulating protective layer in the junction perforate, in the junction of input lead 1, output lead 3 and steady resistance body 2, obtain contacting the good Ohmic knot.
Barium titanate ceramic or alloy or polysilicon or the monocrystalline silicon of the composition of above-described steady resistance for mixing.
To sum up, referring to Fig. 3, existing steady resistance, input lead 1 a corresponding output lead 3, form electric current bidirectional shunt path, under the constant condition of steady resistance body construction, improved structure is: two input lead 1 corresponding output leads 3, vacate more space like this, again arrange input lead and output lead, form the one-way transmission path of electric current, metering function increases, referring to Fig. 4; Compared to Figure 1, under the current delivery distance situation about being more or less the same, the sectional area of transmission increases, and promptly the electric current handling capacity increases.The steady resistance of improved bipolar junction transistor emitter can effectively reduce power consumption, can avoid again burning device because of " heat is run quickly ".
Claims (5)
1. the steady resistance of bipolar junction transistor emitter, described steady resistance comprises steady resistance body (2), the input lead (1) that is connected with steady resistance body (2) and output lead (3), input lead (1) and output lead (3) are the plane pectination and arrange, it is characterized in that: output lead (3) is equidistantly arranged, input lead (1) is density interphase arranges, and forms the one-way transmission path of electric current.
2. the steady resistance of bipolar junction transistor emitter according to claim 1, it is characterized in that: described input lead (1) and output lead (3) are sheet metal.
3. the steady resistance of bipolar junction transistor emitter according to claim 1, it is characterized in that: described steady resistance body (2) is a plane resistance.
4. the steady resistance of bipolar junction transistor emitter according to claim 1 is characterized in that: the surface of described steady resistance body (2) is with one deck insulating protective layer.
5. the steady resistance of bipolar junction transistor emitter according to claim 1, it is characterized in that: the composition of described steady resistance body (2) is barium titanate ceramic or the alloy or the monocrystalline silicon of polysilicon or doping.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910074716 CN101567363B (en) | 2009-06-11 | 2009-06-11 | ballast resistor of bipolar junction transistor emitter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910074716 CN101567363B (en) | 2009-06-11 | 2009-06-11 | ballast resistor of bipolar junction transistor emitter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101567363A CN101567363A (en) | 2009-10-28 |
| CN101567363B true CN101567363B (en) | 2011-12-07 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200910074716 Expired - Fee Related CN101567363B (en) | 2009-06-11 | 2009-06-11 | ballast resistor of bipolar junction transistor emitter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101567363B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5841184A (en) * | 1997-09-19 | 1998-11-24 | The Whitaker Corporation | Integrated emitter drain bypass capacitor for microwave/RF power device applications |
| CN1252168A (en) * | 1997-04-04 | 2000-05-03 | 艾利森电话股份有限公司 | Bipolar transistor structure |
| EP0811249B1 (en) * | 1995-02-24 | 2002-08-28 | Telefonaktiebolaget Lm Ericsson | Emitter ballast bypass for radio frequency power transistors |
-
2009
- 2009-06-11 CN CN 200910074716 patent/CN101567363B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0811249B1 (en) * | 1995-02-24 | 2002-08-28 | Telefonaktiebolaget Lm Ericsson | Emitter ballast bypass for radio frequency power transistors |
| CN1252168A (en) * | 1997-04-04 | 2000-05-03 | 艾利森电话股份有限公司 | Bipolar transistor structure |
| US5841184A (en) * | 1997-09-19 | 1998-11-24 | The Whitaker Corporation | Integrated emitter drain bypass capacitor for microwave/RF power device applications |
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| Publication number | Publication date |
|---|---|
| CN101567363A (en) | 2009-10-28 |
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| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111207 |