CN101567326A - Printed circuit board and method for forming same - Google Patents
Printed circuit board and method for forming same Download PDFInfo
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- CN101567326A CN101567326A CN 200810095810 CN200810095810A CN101567326A CN 101567326 A CN101567326 A CN 101567326A CN 200810095810 CN200810095810 CN 200810095810 CN 200810095810 A CN200810095810 A CN 200810095810A CN 101567326 A CN101567326 A CN 101567326A
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- electronic component
- support plate
- dielectric layer
- film
- circuit board
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Abstract
The embodiment of the invention discloses a printed circuit board and a method for forming the same. The method for forming the printed circuit board comprises the following steps: providing a support plate, forming a first circuit on the support plate, settling a thin film on the support plate; using the thin film to arrange an electronic part on the support plate, enabling the electronic part to be electrically connected with the first circuit, forming a dielectric layer to cover the electronic part in a carpeting way, and removing the support plate. The embodiment of the invention is beneficial to reducing the size of a finished electronic product.
Description
Technical field
The present invention relates to a kind of printed circuit board (PCB) and forming method thereof, especially about a kind of printed circuit board (PCB) that is embedded with electronic component and forming method thereof.
Background technology
Printed circuit board (PCB) (printed circuit board) is a kind of mechanism that constitutes the circuit pattern that interconnects between each electronic component.Figure 1 shows that the schematic diagram of traditional printing circuit board 10 and electronic component such as integrated circuit 20 and passive device 30 interconnection.As described in Figure, known printed circuit board (PCB) 10 adopts the surface to glue the mode of dress with the interconnection system of integrated circuit 20, wherein integrated circuit 20 is to have encapsulated and have the electronic component of pin 21, sees through circuit 11 that welding makes pin 21 and printed circuit board (PCB) 10 and joins and finish interconnection.
The compact trend of electronic product has made traditional printing circuit board 10 can not meet demand gradually now.For example, because electronic component is contained on the surface of printed circuit board (PCB) 10,, thereby dwindling of its size is restricted so printed circuit board (PCB) 10 must provide enough surface areas to use for it.Moreover the known integrated circuit 20 that is installed on the printed circuit board (PCB) 10 all is a product of having finished encapsulation usually, so its volume will be more a lot of greatly than the volume of the former not naked core of encapsulation, this point makes the size of final electronic product dwindle too and is restricted.Therefore, need a kind of structure and method of improvement to solve known problem.
Summary of the invention
The invention provides a kind of printed circuit board (PCB) that is embedded with electronic component, its practice is to utilize printed circuit board technology to form circuit earlier on a temporary transient support plate, directly on temporary transient support plate, build electronic component then, as diode, transistor and other optoelectronic semiconductor etc., and make the electronic component electrical connection therewith of this circuit.Then, utilize the suitable insulation material with this circuit therewith electronic component encapsulate simultaneously.After finishing, encapsulation more temporary transient support plate is removed.
The present invention has the following characteristics that help to dwindle the size of final electronic product at least: electronic component is embedded in the packaging insulating layer; Electronic component is directly to make on support plate, will encapsulate simultaneously with circuit after it completes; After circuit and electronic component are transferred to the packaging insulating layer, remove temporary transient support plate to reduce thickness.
According to an embodiment, the invention provides a kind of formation method of printed circuit board (PCB), comprising provides a support plate; Form one first circuit on support plate; Deposit a film on support plate; Utilize film to build an electronic component on support plate, electronic component is electrically connected first circuit; Code-pattern ground forms a dielectric layer to coat electronic component; Remove dielectric layer a part so that a upper surface of electronic component expose; Form one second circuit on dielectric layer, second line electricity connects electronic component; Form an insulating barrier to cover second circuit and dielectric layer; And remove support plate.
According to another embodiment, the invention provides a kind of formation method of printed circuit board (PCB), comprising provides a support plate; Form one first circuit on support plate; Build an electronic component on support plate, electronic component is electrically connected first circuit; Code-pattern ground forms a dielectric layer to coat electronic component; Remove dielectric layer a part so that a upper surface of electronic component expose; Form one second circuit on dielectric layer, second line electricity connects electronic component; Form an insulating barrier to cover this second circuit and this dielectric layer; And remove this support plate.
Description of drawings
Fig. 1 shows the schematic diagram of known printed circuit board (PCB) and electronic component interconnection.
Fig. 2 A to 2I is the manufacturing process schematic diagram of the printed circuit board (PCB) that is embedded with electronic component of first embodiment of the invention.
Fig. 3 A to 3D is the manufacturing process schematic diagram of the printed circuit board (PCB) that is embedded with electronic component of second embodiment of the invention.
Fig. 4 A to 4C is the manufacturing process schematic diagram of the printed circuit board (PCB) that is embedded with electronic component of third embodiment of the invention.
Description of reference numerals
10 printed circuit board (PCB)s
11 circuits
20 integrated circuits
21 pins
30 passive devices
200 support plates
201 first circuits
202 films
202a one end
203 ray structure layers
The 203a upper surface
204 first electrical semiconductor layers
205 luminescent layers
206 second electrical semiconductor layers
210 dielectric layers
220 second circuits
230 insulating barriers
300 support plates
301 first circuits
302 films
302a one end
303 transistor arrangements
The 303a upper surface
304 source electrodes
305 drain electrodes
306 gate insulators
307 grids
310 dielectric layers
320 second circuits
330 look edge layers
400 support plates
401 first circuits
403 electroluminescence body structures
The 403a upper surface
404 electron injecting layers
405 electronic conductive layers
406 electroluminescence layers
407 hole transmission layers
408 hole injection layers
410 dielectric layers
420 second circuits
430 insulating barriers
Embodiment
Below with reference to appended diagram demonstration the preferred embodiments of the present invention.Similar components adopts the components identical symbol in the appended diagram.Should note presenting the present invention for clear, each element in the appended diagram is not the scale according to material object, and for avoiding fuzzy content of the present invention, below known spare part, associated materials and correlation processing technique thereof are also omitted in explanation.
Fig. 2 A to 2I is the first embodiment of the present invention, and illustration has the making flow process of the printed circuit board (PCB) of flush type light-emitting diode.With reference to figure 2A, a support plate 200 is provided and forms one first circuit 201 on support plate 200.Support plate 200 can be any suitable substrate, is good with the conducting metal substrate especially, for example copper clad laminate or stainless thin alloy sheets.The formation of first circuit 201 can utilize known printed circuit board technology.For example, can on support plate 200, be coated with dry film; Then with the surface of dry film patterning with the support plate 200 under exposing; Then be that mask is electroplated on the surface of the support plate 200 that conductor material such as copper nickel equals to expose with the dry film; And then dry film divested to form first circuit 201.
With reference to figure 2B, deposit a film 202 on support plate 200.Preferred, film 202 is formed directly on the surface of support plate 200, and film 202 has an end 202a and connects first circuit 201.Film 202 is the growth substrate of the follow-up light-emitting diode that will form.With growth LED epitaxial layer is example, and the material of film 202 can be GaAs (GaAs), indium phosphide (InP), gallium phosphide (GaP), sapphire (sapphire), carborundum (SiC) etc.Film 202 can have the patterning profile.The formation of film 202 can be adopted suitable thin film deposition and mask technique, technologies such as for example known sputter, vapour deposition or screen printing.
With reference to figure 2C, be substrate with film 202, utilize known epitaxy technology and semiconductor deposition technology to form ray structure layer 203 on support plate 200.Ray structure layer 203 can comprise several epitaxial loayers as one first electrical semiconductor layer 204, luminescent layer 205 and one second electrical semiconductor layer 206.For example, the first electrical semiconductor layer 204 can be n type (Al
xGa
1-x)
0.5In
0.5The P epitaxial loayer; Luminescent layer 205 bags are the (Al of undoped
xGa
1-x)
0.5In
0.5The P epitaxial loayer, and the second electrical semiconductor layer 206 can be p type (Al
xGa
1-x)
0.5In
0.5The P epitaxial loayer.The relative thickness of may command film 202, the first electrical semiconductor layer 204 and first circuit 201 is so that the first electrical semiconductor layer 204 electrically connects first circuit 201.It should be noted that luminescent layer 205 and one second electrical semiconductor layer 206 can not touch first circuit 201, otherwise will make ray structure layer 203 lose function.Except each above-mentioned epitaxial loayer, ray structure layer 203 also can comprise other functional structure, for example ohmic contact layer, barrier layer, and reflector or the like.
With reference to figure 2D, code-pattern ground forms a dielectric layer 210 and coats the ray structure layer 203 and first circuit 201.Dielectric layer 210 preferably then optional from spin coating glass, silicones, epoxy resin (Epoxy), pi (polyimide) or cross the fluorine cyclobutane (prefluorocyclobutane, PFCB) etc.Can utilize known accurate coating process to finish this step.Should note before carrying out this step ray structure layer 203 un-encapsulated.
With reference to figure 2E, the part with appropriate chemical mechanical polishing technology removal dielectric layer 210 is exposed a upper surface 203a of ray structure layer 203.Then,, form one second circuit 220 on dielectric layer 210, and make second circuit 220 be electrically connected ray structure layers 203 via suitably controlling with reference to figure 2F.For example, can form the dry film of patterning earlier on the upper surface 203a of dielectric layer 210 and ray structure layer 203; Then with this patterning dry film as mask, utilize the sputter technology to inject the electric conducting material crystal seed; Then, see through this crystal seed and carry out electroplating technology to form second circuit 220 on the surface of dielectric layer 210, this second circuit 220 also contacts the upper surface 203a of ray structure layer 203 simultaneously to reach electrical connection.In addition, also can use screen printing technology, conductor material such as copper cream silver paste etc. is printed on the dielectric layer 210 to form second circuit 220.
Then, with reference to figure 2G, code-pattern ground forms an insulating barrier 230 to link second circuit 220, ray structure layer 203 and dielectric layer 210.The material of insulating barrier 230 can be polyesters, pi (polyimide) class, wherein can contain suitable organic supporting material.The mode that can be coated with forms insulating barrier 230, or the above-mentioned material pressing is affixed in flakes again on the surface of second circuit 220 and ray structure layer 203.Can suitably adjust the thickness and the intensity of insulating barrier 230, make it be enough to supporting layer, so support plate 200 can be removed, form the structure shown in Fig. 2 H as each above-mentioned element.Support plate 200 remove available known etching technique.
Fig. 2 I shows the selectivity step after Fig. 2 H.As shown in the figure, can utilize etching that film 202 is removed, because of film 202 may be a light absorbent, so it is removed the brightness that can increase light-emitting diode.In addition, as shown in the figure, can optionally suitably grind insulating barrier 230 and second circuit 220 is exposed.
Should understand via above-mentioned, the present invention is not integrally sticking being loaded on the support plate of electronic component (for example being the electronic component of generally having finished encapsulation) that directly will complete.The present invention provides a kind of method of integrating printed circuit board technology and semiconductor technology or other electronic component technology.In brief, the present invention utilizes printed circuit board technology to form one external circuit on support plate earlier, directly utilizes semiconductor technology or other electronic component technology progressively to set up the primary structure of electronic component on support plate then; Utilizing printed circuit board technology to form another road external circuit afterwards again is electrically connected with electronic component.The electronic component of first embodiment of the invention presents a demonstration with light-emitting diode, so should be appreciated that except light-emitting diode, the method that first embodiment is disclosed also is applicable to other diodes, engages diode, photodiode (photodiode), reaches laser diode as PN.
Fig. 3 A to 3D illustration second embodiment of the present invention.The difference of second embodiment and first embodiment is that its electronic component of imbedding is a transistor.In detail, as shown in Figure 3A, a support plate 300 is provided and forms one first circuit 301 on support plate 300.Then, deposit a film 302 on support plate 300 with reference to figure 3B.Preferred, film 302 is formed directly on the surface of support plate 300, and film 302 has an end 302a and connects first circuit 301.Film 302 is the growth substrate of the follow-up semiconductor transistor that will form.As example, the material of film 302 can be silicon (Si), GaAs (GaAs), indium phosphide (InP), gallium phosphide (GaP), sapphire (sapphire), carborundum (SiC) etc.The formation of film 302 can be adopted suitable known technology, for example technologies such as sputter, vapour deposition or screen printing.
With reference to figure 3C, be substrate with film 302, utilize known semiconductor technology and suitable semi-conducting material to form transistor arrangement 303.Transistor arrangement 303 comprises source electrode 304, drain electrode 305, gate insulator 306 and grid 307, wherein source electrode 304 and drain and 305 connect first circuit 301 respectively.The subsequent step of Fig. 3 C is then similar with first embodiment.Shown in Fig. 3 D, code-pattern ground forms a dielectric layer 310 to coat the upside-down mounting lamellar body tubular construction 303 and first circuit 301, should note before carrying out this step transistor arrangement 303 un-encapsulated.Then, the part with appropriate chemical mechanical polishing technology removal dielectric layer 310 is exposed a upper surface 303a of transistor arrangement 303.Then, form one second circuit 320 on dielectric layer 310, and make second circuit 320 be electrically connected transistor arrangements 303 via suitably controlling.Then, code-pattern ground forms an insulating barrier 330 to link second circuit 320, transistor arrangement 303 and dielectric layer 310.Can suitably adjust the thickness and the intensity of insulating barrier 330, make it be enough to supporting layer, again support plate 300 be removed at last as each above-mentioned element.
The electronic component of second embodiment of the invention presents a demonstration with MOS transistor, should be appreciated that so other transistors such as bipolar transistor, the CMOS transistor etc. beyond the MOS transistor also are applicable to the present invention.
Fig. 4 A to 4C illustration third embodiment of the present invention.The difference of the 3rd embodiment and aforementioned two embodiment is that the manufacture method of its electronic component does not contain the step as growth substrate such as formation film 202 and 302.In other words, make the also technology of available non high temperature of flush type electronic component of the present invention, for example vacuum vapour deposition, method of spin coating or typography (Printing Process), wire mark (Screen Printing), ink-jet seal (Inkjet Printing) and contact print (Contact Printing) or the like.The electronic component of the 3rd embodiment is an example with electroluminor (Electroluminescence) promptly.In detail, shown in Fig. 4 A, a support plate 400 is provided and forms one first circuit 401 on support plate 400.Then, utilize above-mentioned evaporation, coating or printing technology to merge suitable mask technique and form electroluminescence body structure 403 with reference to figure 4B.Electroluminescence body structure 403 comprises electron injecting layer 404, electronic conductive layer 405, electroluminescence layer 406, hole transmission layer 407, reaches hole injection layer 408.The material of electron injecting layer 404 can be the organic material of doping alkalinous metal; Electronic conductive layer 405 can be oxadiazoles (Oxadiazole), triazole (Triazoles) or phenanthrolene (Phenanthroline); Electroluminescence layer 406 can be the macromolecule that contains various fluorchromes; Hole transmission layer 407 can be the allyl amine compounds; Hole injection layer 408 can be the organic material of doping lewis' acid.The subsequent step of Fig. 4 B is then similar with first embodiment and second embodiment.Shown in Fig. 4 C, code-pattern ground forms a dielectric layer 410 to coat the electric electroluminescence body structure 403 and first circuit 401, should note before carrying out this step electroluminescence body structure 403 un-encapsulated.Then, the part with appropriate chemical mechanical polishing technology removal dielectric layer 410 is exposed a upper surface 403a of electroluminescence body structure 403.Then, form one second circuit 420 on dielectric layer 410, and make second circuit 420 be electrically connected electroluminescence body structures 403 via suitably controlling.Then, code-pattern ground forms an insulating barrier 430 binding second circuit 420, electroluminescence body structure 403 and dielectric layers 410.Can suitably adjust the thickness of insulating barrier 430, make it be enough to supporting layer, again support plate 400 be removed at last as each above-mentioned element.
The electronic component of aforementioned each embodiment of the present invention presents a demonstration with light-emitting diode, transistor, electroluminor, so should be appreciated that except these electronic components, and other is fit to the electronic component of above-mentioned technology, and for example the fiber optic conduction part is also in scope of the present invention.
The above is the preferred embodiments of the present invention only, is not in order to limit claim of the present invention; All other do not break away from the equivalence of being finished under the disclosed spirit and changes or modification, all should be included in the following application thickness claim.
Claims (17)
1, a kind of formation method of printed circuit board (PCB) comprises:
One support plate is provided;
Form one first circuit on this support plate;
Deposit a film on this support plate;
Utilize this film to build an electronic component on this support plate, this electronic component is electrically connected this first circuit;
Code-pattern ground forms a dielectric layer to coat this electronic component;
Remove this dielectric layer a part so that a upper surface of this electronic component expose;
Form one second circuit on this dielectric layer, this second line electricity connects this electronic component;
Form an insulating barrier and cover this second circuit and this dielectric layer; And
Remove this support plate.
2, the method for claim 1, wherein this support plate is a metal substrate, and forms the step utilization plating of this first circuit.
3, the method for stating as claim 1, wherein the material of this film is selected from the group that following project is formed: silicon, GaAs, indium phosphide, gallium phosphide, sapphire, and carborundum.
4, the method for claim 1, wherein this film of this deposition utilizes sputter, chemical vapour deposition (CVD) or screen printing in the step of this support plate.
5, the method for claim 1, wherein this to utilize this film to build that this electronic component comprises with this film in the step on this support plate be that substrate grown one epitaxial structure is on this film.
6, method as claimed in claim 5, wherein this electronic component is a diode.
7, method as claimed in claim 6, wherein this diode comprises PN junction diode, photodiode, light-emitting diode, reaches laser diode.
8, the method for claim 1, wherein this to utilize this film to build that this electronic component comprises with this film in the step on this support plate be that substrate utilizes semiconductor technology to form a transistor arrangement on this substrate.
9, the method for claim 1, wherein this method does not comprise directly and to be loaded on this support plate this electronic component is integrally sticking.
10, the method for claim 1, wherein code-pattern ground form this dielectric layer with this step that coats this electronic component before, this electronic component un-encapsulated.
11, a kind of printed circuit board (PCB), this printed circuit board (PCB) is made with the method for claim 1.
12, a kind of formation method of printed circuit board (PCB) comprises:
One support plate is provided;
Form one first circuit on this support plate;
Build an electronic component on this support plate, this electronic component is electrically connected this first circuit;
Code-pattern ground forms a dielectric layer to coat this electronic component;
Remove this dielectric layer a part so that a upper surface of this electronic component expose;
Form one second circuit on this dielectric layer, this second line electricity connects this electronic component;
Form an insulating barrier to cover this second circuit and this dielectric layer; And
Remove this support plate.
13, method as claimed in claim 12, wherein this support plate is a metal substrate, and forms the step utilization plating of this first circuit.
14, method as claimed in claim 12, wherein this electronic component is an electroluminor.
15, method as claimed in claim 12, wherein this method does not comprise directly and to be loaded on this support plate this electronic component is integrally sticking.
16, method as claimed in claim 12, wherein code-pattern ground form this dielectric layer with this step that coats this electronic component before, this electronic component un-encapsulated.
17, a kind of printed circuit board (PCB), this printed circuit board (PCB) is made with method as claimed in claim 12.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810095810 CN101567326B (en) | 2008-04-24 | 2008-04-24 | Printed circuit board and method for forming same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810095810 CN101567326B (en) | 2008-04-24 | 2008-04-24 | Printed circuit board and method for forming same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101567326A true CN101567326A (en) | 2009-10-28 |
| CN101567326B CN101567326B (en) | 2013-04-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200810095810 Expired - Fee Related CN101567326B (en) | 2008-04-24 | 2008-04-24 | Printed circuit board and method for forming same |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105575923A (en) * | 2014-09-12 | 2016-05-11 | 矽品精密工业股份有限公司 | Substrate structure and method for fabricating the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4635356A (en) * | 1984-12-28 | 1987-01-13 | Kabushiki Kaisha Toshiba | Method of manufacturing a circuit module |
| US5353498A (en) * | 1993-02-08 | 1994-10-11 | General Electric Company | Method for fabricating an integrated circuit module |
| DE10234951B4 (en) * | 2002-07-31 | 2009-01-02 | Qimonda Ag | Process for the production of semiconductor circuit modules |
| KR100757910B1 (en) * | 2006-07-06 | 2007-09-11 | 삼성전기주식회사 | Buried pattern substrate and manufacturing method thereof |
-
2008
- 2008-04-24 CN CN 200810095810 patent/CN101567326B/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105575923A (en) * | 2014-09-12 | 2016-05-11 | 矽品精密工业股份有限公司 | Substrate structure and method for fabricating the same |
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| Publication number | Publication date |
|---|---|
| CN101567326B (en) | 2013-04-17 |
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Granted publication date: 20130417 Termination date: 20140424 |