CN101566767A - Liquid crystal display panel - Google Patents

Liquid crystal display panel Download PDF

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Publication number
CN101566767A
CN101566767A CNA200810096034XA CN200810096034A CN101566767A CN 101566767 A CN101566767 A CN 101566767A CN A200810096034X A CNA200810096034X A CN A200810096034XA CN 200810096034 A CN200810096034 A CN 200810096034A CN 101566767 A CN101566767 A CN 101566767A
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CN
China
Prior art keywords
disposed
layer
substrate
active component
insulation course
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Granted
Application number
CNA200810096034XA
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Chinese (zh)
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CN101566767B (en
Inventor
张营辉
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Chunghwa Picture Tubes Ltd
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Chunghwa Picture Tubes Ltd
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Priority to CN200810096034XA priority Critical patent/CN101566767B/en
Publication of CN101566767A publication Critical patent/CN101566767A/en
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Publication of CN101566767B publication Critical patent/CN101566767B/en
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Abstract

The invention provides a liquid crystal display panel comprising a counter baseplate, a liquid crystal layer and an active element array baseplate, wherein the liquid crystal layer is arranged between the active element array baseplate and the counter baseplate; the active element array baseplate comprises a first baseplate, a scan wiring, a data wiring, an active element, a plurality of semiconductor layers, a maskant and a pixel electrode; the active element is arranged on the first baseplate and is respectively and electrically connected with the scan wiring and the data wiring; the active element is provided with an insulation layer which extends outside the active element and covers the first baseplate; the semiconductor layers are arranged on the insulation layer; the maskant covers the semiconductor layers, the active element and part of the insulation layer; the pixel electrode is arranged on the maskant and is connected with the active element; and the semiconductor layers of the active element array baseplate correspond to bulges on the counter baseplate.

Description

Display panels
Technical field
The invention relates to a kind of display panels, and particularly relevant for a kind of active elements array substrates and subtend substrate that can effectively suppress dark attitude light leak.
Background technology
In order to allow the user that better display quality is arranged, LCD all develops towards characteristics such as height contrast (highcontrast ratio), the counter-rotating of no gray scale (no gray scale inversion), colour cast little (little color shift), brightness height (high luminance), high color saturation, rapid reaction and wide viewing angles at present.With the wide viewing angle technology, common LCD for example has copline suitching type (in-plane switching, IPS) LCD, stable twisted nematic LCD, limit suitching type (fringe field switching) LCD and multidomain vertical alignment type (multi-domain vertical alignment, MVA) LCD etc.
For existing multiple domain vertical orientation type liquid crystal display, because the orientation protrusion (alignment bump) that is disposed on the colored optical filtering substrates can be so that liquid crystal molecule be multi-direction arrangement, obtaining several different orientation fields (domain), so multiple domain vertical orientation type liquid crystal display can be reached the requirement of wide viewing angle.
It should be noted that, when display frame presents dark attitude picture, still can be subjected to the influence of orientation protrusion and topple over corresponding near the liquid crystal molecule the orientation protrusion on the colored optical filtering substrates (alignment bump), thereby cause dark attitude picture that the phenomenon of light leak is arranged corresponding to orientation protrusion part.Thus, the contrast of display frame and display quality all can be subjected to bad influence.
Summary of the invention
The invention provides a kind of display panels, it has good display quality.
The present invention proposes a kind of display panels, and it comprises a subtend substrate, a liquid crystal layer and an active elements array substrates.Wherein, liquid crystal layer is disposed between active elements array substrates and the subtend substrate.This active elements array substrates comprises one first substrate, one scan distribution, a data wiring, an active component, a plurality of semiconductor layer, a protective seam and a pixel electrode.Active component of the present invention is disposed on first substrate and with scan wiring and electrically connects.Active component has an insulation course, and insulation course to extend to active component outer and cover first substrate and scan wiring.Above-mentioned data wiring is disposed on the insulation course and with active component and electrically connects.In addition, semiconductor layer is disposed on the insulation course, and semiconductor layer is suitable for corresponding with a plurality of protrusions on the subtend substrate.In addition, protective seam covers semiconductor layer, active component and partial insulating layer.Above-mentioned pixel electrode is disposed on the protective seam, and electrically connects with active component.In addition, the subtend substrate comprises at least altogether with electrode layer and a plurality of protrusions that are disposed on the common electrode layer.Semiconductor layer in the active elements array substrates of the present invention can be corresponding with the protrusion on the subtend substrate.
In one embodiment of this invention, above-mentioned active component comprises a grid, a channel layer, an ohmic contact layer, one source pole and a drain electrode.Wherein, gate configuration is on first substrate, and insulation course cover gate and first substrate partly.In addition, channel layer is disposed on the insulation course of grid top.In addition, ohmic contact layer is disposed on the channel layer.Ohmic contact layer of the present invention can be between source electrode and the channel layer and between drain electrode and the channel layer.
In one embodiment of this invention, above-mentioned subtend substrate comprises one second substrate and a colored filter pattern layers.Wherein, colored filter pattern layers is disposed on second substrate, and the common electrode layer is positioned on the colored filter pattern layers, and protrusion is disposed on the common electrode layer.
In one embodiment of this invention, above-mentioned protective seam has a contact window, and pixel electrode sees through contact window and electrically connects with active component.
In one embodiment of this invention, above-mentioned pixel electrode has a plurality of slits.
In one embodiment of this invention, the material of above-mentioned semiconductor layer comprises amorphous silicon.
The present invention proposes a kind of subtend substrate, and it comprises one the 3rd substrate, a plurality of semiconductor layer, a filter pattern layer, has altogether with electrode layer and a plurality of protrusion.Wherein, semiconductor layer is disposed on the 3rd substrate.In addition, the filter pattern layer covers semiconductor layer and the 3rd substrate partly.The common electrode layer is disposed on the filter pattern layer.In addition, protrusion is disposed on the common electrode layer, and protrusion is corresponding with the position of semiconductor layer.
In one embodiment of this invention, above-mentioned filter pattern layer comprise red filter membranous layer, green filter film layer and blue filter membranous layer at least one of them.
In one embodiment of this invention, above-mentioned filter pattern layer comprises a transparent caching layer.
Because when display panels presents dark attitude picture, still can be subjected to the influence of protrusion on the subtend substrate and topple over corresponding to the liquid crystal molecule of protrusion.Therefore, dark attitude picture has the phenomenon of light leak probably.Active elements array substrates of the present invention has semiconductor layer corresponding to the position of protrusion.Because semiconductor layer has light-absorbing characteristic, therefore when display panels presented dark attitude picture, semiconductor layer can effectively absorb the light leak of dark attitude picture.Therefore, display panels of the present invention can have good display quality.In addition, the also configurable semiconductor layer of subtend substrate is with the light leakage phenomena of the dark attitude picture of effective inhibition.
Description of drawings
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, below in conjunction with accompanying drawing the specific embodiment of the present invention is elaborated, wherein:
Figure 1A is the diagrammatic cross-section of first embodiment of the invention display panels.
Figure 1B is the vertical view of first embodiment of the invention active elements array substrates.
Fig. 2 is the diagrammatic cross-section of the subtend substrate of second embodiment of the invention.
The main element symbol description:
100: display panels
200: active elements array substrates
210: the first substrates
211: scan wiring
212: data wiring
220: active component
221: grid
222: insulation course
223: channel layer
224: ohmic contact layer
225: source electrode
226: drain electrode
230,520: semiconductor layer
240: protective seam
250: pixel electrode
300: liquid crystal layer
400,500: the subtend substrate
410: the second substrates
412: colored filter pattern layers
414,540: the common electrode layer
416,550: protrusion
510: the three substrates
530: the filter pattern layer
LC: liquid crystal molecule
S: slit
W: contact window
Embodiment
First embodiment
Figure 1A is the diagrammatic cross-section of first embodiment of the invention display panels, and Figure 1B is the vertical view of first embodiment of the invention active elements array substrates.Please also refer to Figure 1A and Figure 1B, display panels 100 of the present invention comprises an active elements array substrates 200, a liquid crystal layer 300 and a subtend substrate 400.Wherein, liquid crystal layer 300 is disposed between active elements array substrates 200 and the subtend substrate 400.In detail, active elements array substrates 200 of the present invention comprises one first substrate 210, one scan distribution 211 (shown in Figure 1B), a data wiring 212 (shown in Figure 1B), an active component 220, a plurality of semiconductor layer 230, a protective seam 240 and a pixel electrode 250.Active component 220 is disposed on first substrate 210.Under have in the technical field and know that usually the knowledgeable should know that the active component 220 shown in Figure 1A can select the structure of bottom-gate (bottom gate) or the structure of top grid (top gate) for use, at this only in order to painstakingly restriction of explanation.
Present embodiment is that the structure with bottom-gate (bottom gate) explains.Active component 220 mainly is to be made of a grid 221, a channel layer 223, an ohmic contact layer 224, one source pole 225 and 226 of drain electrodes.Wherein, grid 221 is disposed on first substrate 210 and with the scan wiring 211 shown in Figure 1B and electrically connects, and insulation course 222 cover gate 221 and first substrate 210 partly.In addition, channel layer 223 is disposed on the insulation course 222 of grid 221 tops.In addition, ohmic contact layer 224 of the present invention between source electrode 225 and the channel layer 223 and drain 226 and channel layer 223 between, thereby can reduce contact impedance between semiconductor material and the metal material.Wherein, source electrode 225 can electrically connect with the data wiring 212 shown in Figure 1B.On the practice, switching signal can see through the transmission of scan wiring 211 and active component 220 is opened, and opening the back shows signal at active component 220 can and be passed in the pixel electrode 250 through data wiring 212.
On the other hand, semiconductor layer 230 of the present invention is disposed on the insulation course 222, and the material of semiconductor layer 230 for example is an amorphous silicon.It should be noted that this semiconductor layer 230 can need not additionally increase processing procedure with channel layer 223 by forming in the lump with the mask processing procedure.By Figure 1A as can be known, protective seam 240 can cover active component 220, partial insulating layer 222 and semiconductor layer 230.In detail, protective seam 240 has a contact window W, and is positioned at that pixel electrode 250 on the protective seam 240 can see through contact window W and electrically connects with the drain electrode 226 of active component 220.This pixel electrode 250 has a plurality of slit S, and it can be in order to influencing Electric Field Distribution, so that the liquid crystal molecule LC in the liquid crystal layer 300 arranges towards different directions, and can obtain a plurality of orientations field (domain).
The subtend substrate 400 of present embodiment comprises one second substrate 410, a colored filter pattern layers 412, has altogether with electrode layer (common electrode layer) 414 and a plurality of protrusions 416 (bump).Wherein, colored filter pattern layers 412 is disposed between second substrate 410 and the common electrode layer 414.In addition, protrusion 416 is disposed on the common electrode layer 414.Specifically, the position of subtend substrate 400 protrusions things 416 can be corresponding with the position of semiconductor layer 230 in the active elements array substrates 200.The layout of semiconductor layer 230 (layout) all can correspond to the layout of the subtend substrate 400 protrusions things 416 shown in Figure 1A shown in Figure 1B.Certainly, have the layout of knowing the visual protrusion 416 of the knowledgeable usually in the affiliated technical field and the corresponding layout of adjusting semiconductor layer 230, the layout of semiconductor layer shown in Figure 1B 230 is only in order to explanation, in this limitation painstakingly.
Because semiconductor layer 230 has light-absorbing characteristic, therefore when display panels 100 presented dark attitude picture, semiconductor layer 230 can effectively absorb the light leak of dark attitude picture in the generation of the place of protrusion 416.On the other hand, when display frame was the bright attitude picture of high contrast, this semiconductor layer 230 can allow light pass through, and can not produce harmful effect to display frame.Therefore, the display frame of display panels of the present invention can have good contrast and display quality.
Subsidiary one what carry is that in one embodiment, subtend substrate 400 also can select not form colored filter pattern layers 412.In order to make display frame that full-color effect can be arranged, this means that active elements array substrates must adopt COA (color filter on array) technology to make.
Second embodiment
Semiconductor layer on the active elements array substrates of the present invention also can be made on the subtend substrate, below will describe in detail.Fig. 2 is the diagrammatic cross-section of the subtend substrate of second embodiment of the invention.Please refer to Fig. 2, subtend substrate 500 of the present invention comprises one the 3rd substrate 510, a plurality of semiconductor layer 520, a filter pattern layer 530, has altogether with electrode layer 540 and a plurality of protrusions 550.Wherein, semiconductor layer 520 is disposed on the 3rd substrate 510.In addition, filter pattern layer 530 can cover semiconductor layer 520 and the 3rd substrate 510 partly.In one embodiment, filter pattern layer 530 can comprise red filter membranous layer, green filter film layer and blue filter membranous layer at least one of them.Certainly, this filter pattern layer 530 also can be a transparent caching layer.This all can be along with whether active elements array substrates adopts the COA technology and do suitable adjustment.
As shown in Figure 2, common electrode layer 540 is disposed on the filter pattern layer 530.Specifically, being positioned at the position of the protrusion 550 on the common electrode layer 540 can be corresponding with the position of semiconductor layer 520.Thus, the semiconductor layer 520 on the subtend substrate 500 just can effectively be absorbed near the light leak that is produced the protrusion 550, with effective raising quality of display pictures.
In sum, active elements array substrates of the present invention has semiconductor layer corresponding to the position of protrusion.Because semiconductor layer has light-absorbing characteristic, therefore when display panels presented dark attitude picture, this semiconductor layer can effectively absorb near the light leak of dark attitude picture protrusion, with the contrast of lifting display frame.Therefore, display panels of the present invention can have good display quality.In addition, the also configurable semiconductor layer in the position of respective protrusions thing on the subtend substrate can effectively suppress the light leakage phenomena of dark attitude picture equally.
Though the present invention discloses as above with preferred embodiment; right its is not in order to qualification the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when can doing a little modification and perfect, so protection scope of the present invention is when with being as the criterion that claims were defined.

Claims (6)

1. display panels comprises:
One subtend substrate comprises at least altogether with electrode layer and a plurality of protrusions that are disposed on this common electrode layer;
One liquid crystal layer;
One active elements array substrates, this liquid crystal layer are disposed between this active elements array substrates and this subtend substrate, and this active elements array substrates comprises:
One first substrate;
The one scan distribution is disposed on this first substrate;
One active component is disposed on this first substrate and electrically connects with this scan wiring, and this active component has an insulation course, and this insulation course to extend to this active component outer and cover this first substrate and this scan wiring;
One data wiring is disposed on this insulation course and electrically connects with this active component;
A plurality of semiconductor layers are disposed on this insulation course, and those semiconductor layers are corresponding with those protrusions on this subtend substrate;
One protective seam covers those semiconductor layers, this active component and this insulation course partly; And
One pixel electrode is disposed on this protective seam, and electrically connects with this active component.
2. display panels as claimed in claim 1 is characterized in that, this active component comprises:
One grid is disposed on this first substrate and electrically connects with this scan wiring, and this insulation course covers this first substrate of this grid, this scan wiring and part;
One channel layer is disposed on this insulation course of this grid top;
One ohmic contact layer is disposed on this channel layer; And
An one source pole and a drain electrode, this ohmic contact layer is disposed between this source electrode and this channel layer and between this drain electrode and this channel layer, and this source electrode and the electric connection of this data wiring.
3. display panels as claimed in claim 1 is characterized in that, this subtend substrate comprises:
One second substrate; And
One colored filter pattern layers is disposed on this second substrate, and this common electrode layer is positioned on this colored filter pattern layers, and those protrusions are disposed on this common electrode layer.
4. display panels as claimed in claim 1 is characterized in that this protective seam has a contact window, and this pixel electrode sees through this contact window and electrically connects with this active component.
5. display panels as claimed in claim 1 is characterized in that this pixel electrode has a plurality of slits.
6. display panels as claimed in claim 1 is characterized in that the material of this semiconductor layer comprises amorphous silicon.
CN200810096034XA 2008-04-24 2008-04-24 Liquid crystal display panel Expired - Fee Related CN101566767B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200810096034XA CN101566767B (en) 2008-04-24 2008-04-24 Liquid crystal display panel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN200810096034XA CN101566767B (en) 2008-04-24 2008-04-24 Liquid crystal display panel

Publications (2)

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CN101566767A true CN101566767A (en) 2009-10-28
CN101566767B CN101566767B (en) 2011-02-09

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102200668A (en) * 2010-03-23 2011-09-28 深圳华映显示科技有限公司 Electric driving liquid crystal lens and three-dimensional display
TWI504975B (en) * 2012-08-23 2015-10-21 Japan Display Inc Liquid crystal display device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102200668A (en) * 2010-03-23 2011-09-28 深圳华映显示科技有限公司 Electric driving liquid crystal lens and three-dimensional display
CN102200668B (en) * 2010-03-23 2013-05-29 深圳华映显示科技有限公司 Electric driving liquid crystal lens and three-dimensional display
TWI504975B (en) * 2012-08-23 2015-10-21 Japan Display Inc Liquid crystal display device

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