CN101566702A - Colored filter and method for manufacturing same - Google Patents
Colored filter and method for manufacturing same Download PDFInfo
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- CN101566702A CN101566702A CNA2008100959499A CN200810095949A CN101566702A CN 101566702 A CN101566702 A CN 101566702A CN A2008100959499 A CNA2008100959499 A CN A2008100959499A CN 200810095949 A CN200810095949 A CN 200810095949A CN 101566702 A CN101566702 A CN 101566702A
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- charged
- colored
- photoresist
- light shield
- shield layer
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Abstract
The invention relates to a colored filter and a method for manufacturing the same. The colored filter comprises a base plate; an energized photosensitive layer is formed on the base plate, and an energized light shading layer is formed on the energized photosensitive layer, thus a plurality of subsidiary pixel areas are defined, and at least one colored photoresist is formed in the subsidiary pixel areas. Due to the repulsive electrical property among the colored photoresists and between the colored photoresists and the energized light shading layer, the problems of the overflow, the crossing, the color mixing and the coffee ring effect of the colored energized photoetching glue are alleviated, and furthermore, the position of the colored photoresists can be precisely controlled and the colored photoresists can be evenly sprayed.
Description
Technical field
The invention relates to a kind of colored filter and manufacture method thereof, refer to a kind of colored filter and manufacture method thereof that is applicable to flat-panel screens especially.
Background technology
Flat-panel screens is to establish the display device of a liquid crystal material to form by the two substrates folder, and in general, two substrates is after the structure of independently producing respectively on it, two substrates is stood hyte and the perfusion liquid crystal again.Yet the structure on common two substrates is to be difference, and for instance, wherein substrate is produced the structure of thin film transistor (TFT) array, is produced the structure of colored filter on another piece substrate.
Please refer to Figure 1A~Fig. 1 D, it shows known making manufacturing method of color filters, is the order that shows manufacturing process with the section of colored optical filtering substrates 100 among the figure.As shown in Figure 1A, at first be on a transparency carrier 110, to form a light shield layer 140,140 are distinguished into and have pixel region 141,142,143 and 144 a plurality of times on the light shield layer, inferior pixel region 141,142,143 and 144 is to make via general semiconductor gold-tinted developing process, thereafter, as shown in Figure 1B, utilize ink-jet equipment 500 that colored photoresist 510,520,530 and 540 is sprayed into time pixel region 141,142,143 and 144.Thereupon, and make transparency carrier 110 irradiations one ultraviolet light,, at last, transparency carrier 110 is heated a period of times, so that colored photoresist 510,520,530 and 540 hardens fully so that colored photoresist 510,520,530 and 540 tentatively hardens.
Yet very wayward colored photoresist 510,520,530 and 540 accurately splashes in inferior pixel region 141,142,143 and 144 in ink jet process.Therefore, known manufacture method is normal extends many problems because of can't accurately controlling colored photoresist 510,520,530 and 540 ink jetting positions or being coated with uniformity coefficient, as: photoresist overflow, across, colour mixture and coffee toroidal effect.Please refer to the diagrammatic cross-section shown in Fig. 2 A, Fig. 2 B more to understand the problems referred to above, wherein Fig. 2 A shows when colored photoresist 520 overflows to cause the bad situation of colored filter to colored photoresist 510 tops, and Fig. 2 B shows when colored photoresist 510 to take place colour mixtures to take place and cause the bad situation of colored filter with colored photoresist 520 across phenomenon.
Summary of the invention
The objective of the invention is to, a kind of colored filter and manufacture method thereof are provided, its be the principle utilizing between the charged colored photoresist, electrically repel each other between charged colored photoresist and the charged light shield layer with reduce charged colored photoresist overflow, across the problem of, colour mixture and coffee toroidal effect, and then reach the charged colored photoresist spraying position of accurate control and spray the effect of charged colored photoresist equably.
The invention provides a kind of method for manufacturing colored filtering substrate, it comprises the following steps: to provide a substrate; Form a charged photographic layer on substrate; Form a charged light shield layer on charged photographic layer, to define pixel region a plurality of times; And form at least one charged colored photoresist in inferior pixel region.Principle that it utilizes between charged colored photoresist, electrically repel each other between charged colored photoresist and the charged light shield layer and then the effect that reaches the charged colored photoresist of even spraying.
In the present invention, above-mentioned charged photographic layer can be semiconductor photocatalyst material charged behind irradiation, and charged light shield layer material can be a charged black photoresist.Charged photographic layer can be electrically with this charged light shield layer to be inhaled mutually, and charged colored photoresist and charged light shield layer can be electrically and repel each other.Therefore, when charged light shield layer and charged colored photoresist all had electronegativity, charged photographic layer then was to have electropositivity, and on the other hand, when charged light shield layer and charged colored photoresist all had electropositivity, charged photographic layer then was to have electronegativity.
Above-mentioned semiconductor photocatalyst material can be monoxide, as: titanium dioxide (TiO
2), zinc paste (ZnO), tin oxide (SnO
2) or zirconia (ZrO
2), it can be via chemical vapour deposition technique (CVD), physical vaporous deposition (PVD) or spin-coating method (Spincoating) to be formed on the substrate.Thereafter, the semiconductor photocatalyst material can be through irradiation, as: irradiation ultraviolet radiation or sunshine make the electronics of semiconductor photocatalyst material obtain enough energy and break away from material itself and then formation a plurality of hydroxyl free radicals (OH radical) in the semiconductor photocatalyst material after a period of time.Its hydroxyl free radical has the very big activity of grabbing electronics, so the semiconductor photocatalyst material can attract with opposite electrical colored photoresist so that charged colored photoresist is distributed in time pixel region equably.
Charged colored photoresist of the present invention can be the one or the combination in any of red photoresist, green photoresist or blue photoresist.The present invention makes charged colored photoresist and charged light shield layer have electrical mode and can be any-mode, be preferably that one with polar molecule, nanoparticle or conducting polymer adds in charged colored photoresist or the charged light shield layer so that it has electrically, perhaps via feeding an ozone (Ozone) to charged colored photoresist or charged light shield layer, so that it has electrically.
Therefore, colored filter of the present invention and manufacture method thereof comprise provides a substrate, on substrate, form a charged photographic layer, on charged photographic layer, form a charged light shield layer defining pixel region a plurality of times, and form at least one charged colored photoresist in a plurality of pixel regions.And, use charged photographic layer electrically to inhale mutually with charged light shield layer, and the principle that charged colored photoresist and charged light shield layer electrically repel each other with reduce colored photoresist overflow, across the problem of, colour mixture and coffee toroidal effect, and then reach the colored photoresist spraying position of accurate control and spray the effect of colored photoresist equably.
Description of drawings
Specific embodiment of the present invention will be further described by following embodiment and accompanying drawing, wherein:
Figure 1A~Fig. 1 D is known making manufacturing method of color filters.
Fig. 2 A, Fig. 2 B are the bad situations of display color optical filter.
Fig. 3 A~Fig. 3 G is the substrate diagrammatic cross-section of a preferred embodiment of the present invention.
The main element symbol description
Colored optical filtering substrates ... 100
Light source ... 200
Transparency carrier ... 110
Charged photographic layer ... 120
Charged light shield layer ... 130,140
Nozzle ... 310,320,330
Colored photoresist ... 510,520,530,540
Charged colored photoresist ... 311,321,331
Hydroxyl free radical ... 121
The ink-jet equipment ... 500
Inferior pixel region ... 131,132,133,141,142,143,144
Embodiment
At first, please refer to Fig. 3 A~Fig. 3 G, it shows the substrate diagrammatic cross-section of a preferred embodiment of the present invention.
As shown in Fig. 3 A, Fig. 3 B, colored optical filtering substrates 100 is to use a transparency carrier 110, and utilize physical vaporous deposition (PVD) thereon sputter (Sputter) layer of semiconductor photocatalyst material to form a charged photographic layer 120, in the present embodiment, the semiconductor photocatalyst material is to be titanium dioxide (TiO
2), in other embodiments, also can use other sedimentation herein, as: vapour deposition method (Evaporation), molecular beam epitaxy are grown up (Molecular Beam Epitaxy), physical vaporous deposition, spin-coating method or chemical vapour deposition technique etc. to make charged photographic layer 120.
Please refer to Fig. 3 C, it is after the sputter step that is shown in Fig. 3 B is finished, the diagrammatic cross-section of making a charged light shield layer 130 with a charged black photoresist on colored optical filtering substrates 100.As shown in FIG., define pixel region 131,132,133 on the charged light shield layer 130 a plurality of times, and charged light shield layer 130 is to be a charged black photoresist, and charged black photoresist can be through doping polar molecule, nanoparticle and conducting polymer or through feeding ozone processing such as (Ozone) has electrical black resin.
In detail, above-mentioned polar molecule can be coordination bond (Coordinate Bond) and is the molecule or the polar radicals of unsaturated co-ordinate covalent bond (Coordinate Covalent Bond), as-NH-polar group (Polar Group), it can cause high surface energy or be easy to generate ionizing event and make black resin charged.Above-mentioned nanoparticle can be 1A family ion, as: Li
+, Na
+Or K
+Deng, or the transitional element ion, as: Pd
+ 2, Pt
+ 2, Ru
+ 3, Ag
+, Au
+, Ti
+ 2, In
+, Cu
+, Cr
+ 3Or Fe
+ 2Deng, or halide ion, as: F
-, Cl
-, Br
-Or I
-Deng, or 5A family ion, as: N
-3Or P
-3Deng, or 6A family ion, as: O
-Or P
-2Deng, can make it charged in black resin above-mentioned arbitrary ion doping.Above-mentioned conducting polymer can be polyaniline or polyacetylene etc., its illumination energy that is subjected to producing electronic transition (Electron Transition) is so that black resin is charged, and the energy of illumination is preferably and makes conducting polymer produce electronic transition but do not make the black resin sclerosis.In addition, above-mentioned black resin also can be through feeding ozone (Ozone) and irradiating ultraviolet light so that ozone (Ozone) is decomposed into O
2And O
-Ion and charged, in the present embodiment, charged light shield layer 130 is for through feeding the electronegative black resin of ozone (Ozone).
Above-mentioned pixel region 131,132,133 structure is to make via following technology: at first it is evenly to be coated with the charged black photoresist of one deck, in the present embodiment, charged black photoresist is a negative photoresist, then charged black photoresist is shone a light (not shown), and between a charged black photoresist and a light source (not shown), place a mask (not shown), mask comprises a pattern, the part of shield lights is to correspond to time pixel region 131 respectively in this pattern, 132,133, then after illumination a period of time, promptly on charged black photoresist, define time pixel region 131,132,133.Afterwards, colored optical filtering substrates 100 is positioned in the developer solution (not shown), be not subjected to the part of illumination, promptly the charged black photoresist at time pixel region 131,132,133 places is to be dissolved in developer solution and to be removed to appear the profile of time pixel region 131,132,133.
Then, please refer to Fig. 3 D, Fig. 3 E, it is after the charged light shield layer 130 that is shown in Fig. 3 C completes, the diagrammatic cross-section of irradiation one light source 200 on colored optical filtering substrates 100.In the present embodiment, light source 200 is ultraviolet lights, and when it exposed to titanium dioxide, it produced following reaction:
TiO
2+hυ(3.2ev)→h
++e
- (1)
H
2O+h
+(valence band) → .OH+H
+(2)
At first, ultraviolet light is to make the electronics of titania surface obtain enough energy of disengaging, behind the electron detachment, it originally promptly forms the hole (as (1) formula) of positively charged in the position at place, because of electropositivity makes the hydroxy (OH that near it hydrone dissociates and to electronegative attractive force
-) oxidation and discharge electronics so that the hole returns steady state (SS).Yet, shown in Fig. 3 E, on titania surface, the hydroxy that loses electronics then forms hydroxyl free radical (OH radical, i.e. .OH) 121, and it has very big activity to grab electronics (as (2) formula), hereat, after illumination, charged photographic layer 120 promptly has positive electricity.
Then, please refer to Fig. 3 F, it is presented at the diagrammatic cross-section that the charged colorama of coating is carved glue 311,321,331 on the colored optical filtering substrates 100 of Fig. 3 E.The charged colored photoresist 311,321,331 of present embodiment is respectively and has electrical redness, green and blue resins through doping polar molecule, nanoparticle and conducting polymer or through feeding ozone processing such as (Ozone).Above-mentioned polar molecule can be coordination bond (Coordinate Bond) and is the molecule or the polar radicals of unsaturated co-ordinate covalent bond (CoordinateCovalent Bond), as-NH-polar group (Polar Group), it can cause high surface energy or be easy to generate ionizing event and make redness, green and blue resins 311,321,331 charged.Above-mentioned nanoparticle can be 1A family ion, as: Li
+, Na
+Or K
+Deng, or the transitional element ion, as: Pd
+ 2, Pt
+ 2, Ru
+ 3, Ag
+, Au
+, Ti
+ 2, In
+, Cu
+, Cr
+ 3Or Fe
+ 2Deng, or halide ion, as: F
-, Cl
-, Br
-Or I
-Deng, or 5A family ion, as: N
-3Or P
-3Deng, or 6A family ion, as: O
-Or P
-2Deng, can make it charged in redness, green and blue resins 311,321,331 above-mentioned arbitrary ion doping.Above-mentioned conducting polymer can be polyaniline or polyacetylene etc., it is subjected to can producing the illumination energy of electronic transition (Electron Transition) so that redness, green and blue resins 311,321,331 are charged, and the energy of illumination is preferably and makes conducting polymer produce electronic transition but do not make redness, green and blue resins 311,321,331 sclerosis.In addition, above-mentioned redness, green and blue resins 311,321,331 also can be through feeding ozone (Ozone) and irradiating ultraviolet light so that ozone (Ozone) is decomposed into O
2And O
-Ion and charged.In the present embodiment, red, green and blue resins the 311,321, the 331st, electronegative mode is made to feed ozone (Ozone), therefore red, green and blue resins the 311,321, the 331st, with charged light shield layer 130 have identical electrically.
In addition, as shown in FIG., redness, green and blue resins the 311,321, the 331st are sprayed into time pixel region 131,132,133 by a nozzle 310,320,330 respectively, and adjacent pixel region the 131,132, the 133rd, are coated with the colored photoresist 311,321,331 of different colours.Therefore, have different electrical charged photographic layers 120 with redness, green and blue resins 311,321,331 and promptly electrically inhale mutually, so that redness, green and blue resins 311,321,331 are evenly coated in the inferior pixel region 131,132,133 with redness, green and blue resins 311,321,331.On the other hand, with redness, green and blue resins 311,321,331 identically have electronegative charged light shield layer 130 and are and redness, green and blue resins 311,321,331 electrically repel each other, and make time pixel region 131,132, redness in 133, green and blue resins 311,321,331 are difficult for crossing charged light shield layer 130 and pollute adjacent inferior pixel region 131,132,133, and the redness of electrically repelling each other, green and blue resins 311,321,331 also are difficult for mixing mutually, hereat can reduce the photoresist overflow, across, the problem of colour mixture and coffee toroidal effect, and then reach the colored photoresist spraying position of accurate control and spray the effect of colored photoresist equably.
The foregoing description only is to give an example for convenience of description, and the interest field that the present invention advocated should be as the criterion so that the claim scope is described certainly, but not only limits to the foregoing description.
Claims (20)
1, a kind of method for manufacturing colored filtering substrate is characterized in that, comprising:
One substrate is provided;
Form a charged photographic layer on this substrate;
Form a charged light shield layer on this charged photographic layer, to define pixel region a plurality of times; And
Form at least one charged colored photoresist in a plurality of pixel regions.
2, method for manufacturing colored filtering substrate as claimed in claim 1 is characterized in that, wherein, this charged photographic layer is electrically inhaled mutually with this charged light shield layer, and this colour photoresist electrically repels each other with this charged light shield layer.
3, method for manufacturing colored filtering substrate as claimed in claim 1, it is characterized in that, wherein, this charged photographic layer via vapour deposition method, molecular beam epitaxy growth, chemical vapour deposition technique, physical vaporous deposition or spin-coating method one of them mode and be formed on this substrate.
4, method for manufacturing colored filtering substrate as claimed in claim 1 is characterized in that, wherein, this charged photographic layer material is the semiconductor photocatalyst material.
5, method for manufacturing colored filtering substrate as claimed in claim 4 is characterized in that, wherein, this semiconductor photocatalyst is for producing the material of a plurality of hydroxyl free radicals behind irradiation.
6, method for manufacturing colored filtering substrate as claimed in claim 1 is characterized in that, wherein, this charged photographic layer be titanium dioxide, zinc paste, tin oxide or zirconic one of them.
7, method for manufacturing colored filtering substrate as claimed in claim 1 is characterized in that, wherein, this charged light shield layer material is a charged black photoresist.
8, method for manufacturing colored filtering substrate as claimed in claim 2 is characterized in that, wherein, this charged colored photoresist all has negative electricity with this charged light shield layer, and this charged photographic layer then has positive electricity.
9, method for manufacturing colored filtering substrate as claimed in claim 1 is characterized in that, wherein, this charged colored photoresist is one of them of red photoresist, green photoresist or blue photoresist.
10, method for manufacturing colored filtering substrate as claimed in claim 1 is characterized in that, wherein, this charged colored photoresist and this charged light shield layer comprise the material of polar molecule, nanoparticle, conducting polymer and combination in any thereof.
11, a kind of colored filter is characterized in that, comprising:
One substrate;
One charged photographic layer is formed on this substrate;
One charged light shield layer is formed on this charged photographic layer, to define pixel region a plurality of times; And
At least one charged colored photoresist is formed in a plurality of pixel regions.
12, colored filter as claimed in claim 11 is characterized in that, wherein, this charged photographic layer is electrically inhaled mutually with this charged light shield layer, and this colour photoresist electrically repels each other with this charged light shield layer.
13, colored filter as claimed in claim 11 is characterized in that, wherein, this charged photographic layer material is the semiconductor photocatalyst material.
14, colored filter as claimed in claim 13 is characterized in that, wherein, this semiconductor photocatalyst is for producing the material of a plurality of hydroxyl free radicals behind irradiation.
15, colored filter as claimed in claim 11 is characterized in that, wherein, this charged photographic layer is a monoxide.
16, colored filter as claimed in claim 15 is characterized in that, wherein, this charged photographic layer be titanium dioxide, zinc paste, tin oxide or zirconic one of them.
17, colored filter as claimed in claim 11 is characterized in that, wherein, this charged light shield layer material is a charged black photoresist.
18, colored filter as claimed in claim 12 is characterized in that, wherein, this charged colored photoresist all has negative electricity with this charged light shield layer, and this charged photographic layer then has positive electricity.
19, colored filter as claimed in claim 11 is characterized in that, wherein, this charged colored photoresist is one of them of red photoresist, green photoresist or blue photoresist.
20, colored filter as claimed in claim 11 is characterized in that, wherein, this charged colored photoresist and this charged black photoresist comprise the material of polar molecule, nanoparticle, conducting polymer and combination in any thereof.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNA2008100959499A CN101566702A (en) | 2008-04-25 | 2008-04-25 | Colored filter and method for manufacturing same |
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CNA2008100959499A CN101566702A (en) | 2008-04-25 | 2008-04-25 | Colored filter and method for manufacturing same |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102654592A (en) * | 2011-08-29 | 2012-09-05 | 京东方科技集团股份有限公司 | Color filter and manufacturing method thereof |
CN106932847A (en) * | 2017-03-27 | 2017-07-07 | 友达光电股份有限公司 | Manufacturing method of color filter element and active element substrate |
CN108172586A (en) * | 2017-12-29 | 2018-06-15 | 深圳市华星光电技术有限公司 | A kind of display panel and display device |
-
2008
- 2008-04-25 CN CNA2008100959499A patent/CN101566702A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102654592A (en) * | 2011-08-29 | 2012-09-05 | 京东方科技集团股份有限公司 | Color filter and manufacturing method thereof |
CN106932847A (en) * | 2017-03-27 | 2017-07-07 | 友达光电股份有限公司 | Manufacturing method of color filter element and active element substrate |
CN106932847B (en) * | 2017-03-27 | 2019-06-04 | 友达光电股份有限公司 | Manufacturing method of color filter element and active element substrate |
CN108172586A (en) * | 2017-12-29 | 2018-06-15 | 深圳市华星光电技术有限公司 | A kind of display panel and display device |
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Effective date of abandoning: 20091028 |
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