CN101565303A - Iron oxide material with huge electroresistance effect - Google Patents
Iron oxide material with huge electroresistance effect Download PDFInfo
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- CN101565303A CN101565303A CNA2008101049359A CN200810104935A CN101565303A CN 101565303 A CN101565303 A CN 101565303A CN A2008101049359 A CNA2008101049359 A CN A2008101049359A CN 200810104935 A CN200810104935 A CN 200810104935A CN 101565303 A CN101565303 A CN 101565303A
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- iron oxide
- oxide material
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- effect
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Abstract
The invention discloses an iron oxide material with huge electroresistance effect. A chemical formula of the material is (Lu1-xRx)Fe2O4, wherein R is a heavy rare earth element; x is more than or equal to 0 and less than or equal to 1; and x represents the atom percentage content. The iron oxide material has large electroresistance effect near the room temperature; and when the iron oxide material is added with a small electric field, the resistance of the material can be converted from an insulating state to a metallic state. Therefore, the iron oxide material has large application value to a high-density storage electronic element, an adjustable resistor, an electric transducer and other fields.
Description
Technical field
The present invention relates to a kind of iron oxide material, refer near a kind of iron oxide material that huge electricity is sent a telegraph inhibition effect that room temperature, has especially.
Background technology
Electricity is sent a telegraph inhibition effect and is meant that the resistance of material produces obvious variation and shows as current-voltage curve and have strong nonlinear under extra electric field.Utilize this effect, can regulate and control the Resistance states of material by extra electric field: when extra electric field is zero or hour, material is in high-resistance state; When extra electric field was big, material was in low resistance state.Therefore, utilize electricity to send a telegraph inhibition effect and can develop a lot of electron devices, particularly, send a telegraph inhibition effect principle development high-density nonvolatile storage unit and electric random access memory (RRAM, Resistance Switching RandomAccess Memory) is the important topic of paying close attention in the world wide based on electricity
To effectively utilize electricity to send a telegraph inhibition effect in actual applications, need to solve two key issues.The one, low big effect after the match namely has enough big electroresistance effect under littler electric field; The 2nd, keep big electroresistance effect near room temperature.Found in some materials that at present big electricity sends a telegraph inhibition effect, as calcium titanium ore manganose oxide Pr
1-xCa
xMnO
3, titanate Cr:SrTiO
3, and Fe
3O
4Or the like.But electroresistance effect big in these materials all occurs in very low temperature, and needs bigger extra electric field, therefore practical application is had very big restriction.
Summary of the invention
Problem at prior art exists the object of the present invention is to provide a kind of material that huge electricity is sent a telegraph inhibition effect that has near room temperature.
For achieving the above object, the invention provides a kind of iron oxide material with huge electroresistance effect, its chemical formula is (Lu
1-xR
x) Fe
2O
4, wherein R is heavy rare earth element, 0≤x≤1, and x represents atom percentage content.
Further, described heavy rare earth element is Ho, Er, Tm, Yb or Y.
Further, the chemical formula of described ferroelectric material is LuFe
2O
4
Further, the chemical formula of described iron oxide material is YbFe
2O
4
Further, the chemical formula of described iron oxide material is (Lu
0.5Y
0.5) Fe
2O
4
Iron oxide material with huge electroresistance effect as claimed in claim 1 is characterized in that, the chemical formula of described iron oxide material is YFe
2O
4
The invention provides a kind of iron oxide material that huge electricity is sent a telegraph inhibition effect that has, this material has huge electricity and sends a telegraph inhibition effect near room temperature, adding less electric field thereon just can make the resistance of material change metallic state into from the insulation attitude, therefore, the present invention has great using value in fields such as high-density store electrons elements.
Description of drawings
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail:
Fig. 1 is LuFe
2O
4The resistance of sample is the variation with temperature relation under different applied voltages;
Fig. 2 is LuFe
2O
4The current-voltage curve of sample under different temperatures;
Fig. 3 is (300K) LuFe under the room temperature
2O
4The variation relation of the electrical resistance applied voltage of sample.
Embodiment
Of the present invention have huge electricity and send a telegraph the iron oxide material of inhibition effect and adopt solid reaction process sintering preparation in a vacuum.With powder X-ray diffractometry the sample for preparing is carried out structure and material phase analysis, it is well single-phase to show that sample has.With the magnetic of superconducting quantum interference device (SQUID) measure sample, with the resistance and the electric current-resistance curve of rerum natura measuring system (PPMS, Physical Properties Measuring System) measure sample.Volts DS is provided by a Keithley 2400 type voltage sources.
Embodiment 1: preparation LuFe
2O
4Polycrystalline
Be 99.99% Lu with 2.8370 gram purity
2O
3, 1.8975 gram purity are 99.9998% Fe
2O
3And 0.2654 gram purity be 99.99% Fe powder, agitation grinding is used the powder compressing machine compression molding to evenly, puts into quartz ampoule, vacuumizes sealing, 1100 ℃ of sintering 48 hours, naturally cools to room temperature with stove.With powder X-ray diffractometry the Polycrystalline for preparing is carried out structure and material phase analysis, show the LuFe of generation
2O
4Sample has well single-phase.
The LuFe that surveys
2O
4The resistance variation with temperature of sample as shown in Figure 1.Under small voltage, sample is the insulation attitude in whole temperature range.Under high-voltage, resistance reduces several magnitude rapidly in a certain temperature, and isolator-metallic transition takes place.Along with the increase of applied voltage, transition temperature moves to low temperature.
The LuFe that surveys
2O
4The current-voltage curve of sample under different temperatures as shown in Figure 2.Near room temperature, curve table reveals strong nonlinear.When applied voltage is increased to a certain threshold value, unexpected sharp increase takes place in electric current, shows from the insulation attitude to enter metallic state.
At room temperature resistance is with the variation of impressed voltage as shown in Figure 3 for institute's test sample product.Along with the increase of impressed voltage, the resistance of sample sharply reduces.
Embodiment 2: preparation YbFe
2O
4Polycrystalline
At LuFe
2O
4On the material foundation, by with other neighbours' rare earth element (comprising Ho, Er, Tm, Yb) to Lu bit position or replacing whole, can form a series of derivative compounds.These derivatives and LuFe
2O
4Have identical crystal structure and similar electrical property.In this example, we substitute the Lu element fully with the Yb element and form YbFe
2O
4Be 99.99% Yb with 2.8251 gram purity
2O
3, 1.9080 gram purity are 99.9998% Fe
2O
3And 0.2669 gram purity be 99.99% Fe powder, agitation grinding is used the powder compressing machine compression molding to evenly, puts into quartz ampoule, vacuumizes sealing, 1100 ℃ of sintering 48 hours, naturally cools to room temperature with stove.With powder X-ray diffractometry the sample for preparing is carried out structure and material phase analysis, show the YbFe of generation
2O
4Sample has well single-phase.
Embodiment 3: preparation (Lu
1-xY
x) Fe
2O
4The polycrystalline sample, x=0.5,1.0.
At LuFe
2O
4On the material foundation, by with Y element to Lu bit position or replacing whole, can form (Lu
1-xY
x) Fe
2O
4Compound.This compounds and LuFe
2O
4Have similar crystal structure and close electrical property.In this example, we substitute the Lu element with the Y element of 50% Y and 100% respectively and form (Lu
0.5Y
0.5) Fe
2O
4And YFe
2O
4Be preparation (Lu
0.5Y
0.5) Fe
2O
4Sample is 99.99% Y with 0.9175 gram purity
2O
3, 1.6169 gram purity are 99.99% Lu
2O
32.1630 gram purity is 99.9998% Fe
2O
3And 0.3026 gram purity be 99.99% Fe powder, agitation grinding is used the powder compressing machine compression molding to evenly, puts into quartz ampoule, vacuumizes sealing, 1150 ℃ of sintering 48 hours, naturally cools to room temperature with stove.Be preparation YFe
2O
4Sample is 99.99% Y with 2.1335 gram purity
2O
3, 2.5147 gram purity are 99.9998% Fe
2O
3And 0.3518 gram purity be 99.99% Fe powder, agitation grinding is used the powder compressing machine compression molding to evenly, puts into quartz ampoule, vacuumizes sealing, 1150 ℃ of sintering 48 hours, naturally cools to room temperature with stove.With powder X-ray diffractometry the sample for preparing is carried out structure and material phase analysis, show (the Lu of generation
0.5Y
0.5) Fe
2O
4And YFe
2O
4Sample all has well single-phase.
Claims (6)
1. the iron oxide material with huge electroresistance effect is characterized in that, the chemical formula of this iron oxide material is (Lu
1-xR
x) Fe
2O
4, wherein R is heavy rare earth element, 0≤x≤1, and x represents atom percentage content.
2. as claimed in claim 1 have an iron oxide material that huge electricity is sent a telegraph inhibition effect, it is characterized in that described heavy rare earth element is Ho, Er, Tm, Yb or Y.
3. the iron oxide material with huge electroresistance effect as claimed in claim 1 is characterized in that, the chemical formula of described iron oxide material is LuFe
2O
4
4. the iron oxide material with huge electroresistance effect as claimed in claim 1 is characterized in that, the chemical formula of described iron oxide material is YbFe
2O
4
5. as claimed in claim 1 have an iron oxide material that huge electricity is sent a telegraph inhibition effect, it is characterized in that the chemical formula of described iron oxide material is (Lu
0.5Y
0.5) Fe
2O
4
6. the iron oxide material with huge electroresistance effect as claimed in claim 1 is characterized in that, the chemical formula of described iron oxide material is YFe
2O
4
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008101049359A CN101565303A (en) | 2008-04-25 | 2008-04-25 | Iron oxide material with huge electroresistance effect |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008101049359A CN101565303A (en) | 2008-04-25 | 2008-04-25 | Iron oxide material with huge electroresistance effect |
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| Publication Number | Publication Date |
|---|---|
| CN101565303A true CN101565303A (en) | 2009-10-28 |
Family
ID=41281702
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111792926A (en) * | 2020-07-23 | 2020-10-20 | 李笑天 | Method for preparing embryo body by using rare earth element-iron oxide |
| CN116655365A (en) * | 2023-05-06 | 2023-08-29 | 江西理工大学 | Hexagonal rare earth iron oxide high-entropy single-phase multiferroic material, preparation and application thereof |
-
2008
- 2008-04-25 CN CNA2008101049359A patent/CN101565303A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111792926A (en) * | 2020-07-23 | 2020-10-20 | 李笑天 | Method for preparing embryo body by using rare earth element-iron oxide |
| WO2022017543A3 (en) * | 2020-07-23 | 2022-03-17 | 李笑天 | Method for using rare earth element-iron oxide to prepare blank |
| CN111792926B (en) * | 2020-07-23 | 2023-12-19 | 李笑天 | Method for preparing embryo body from rare earth element-iron oxide |
| CN116655365A (en) * | 2023-05-06 | 2023-08-29 | 江西理工大学 | Hexagonal rare earth iron oxide high-entropy single-phase multiferroic material, preparation and application thereof |
| CN116655365B (en) * | 2023-05-06 | 2024-03-15 | 江西理工大学 | Hexagonal rare earth iron oxide high-entropy single-phase multiferroic material, preparation and application thereof |
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Open date: 20091028 |