CN101560640A - Method for preparing zinc oxide nano-layer structure on supportless carbon nano-tube film - Google Patents
Method for preparing zinc oxide nano-layer structure on supportless carbon nano-tube film Download PDFInfo
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- CN101560640A CN101560640A CNA2009100516298A CN200910051629A CN101560640A CN 101560640 A CN101560640 A CN 101560640A CN A2009100516298 A CNA2009100516298 A CN A2009100516298A CN 200910051629 A CN200910051629 A CN 200910051629A CN 101560640 A CN101560640 A CN 101560640A
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Abstract
The invention discloses a method for preparing a zinc oxide nano-layer structure on a supportless carbon nano-tube film, which is characterized in that zinc oxide is evenly attached to the supportless carbon nano-tube film to form the zinc oxide nano-layer structure through thermal evaporation by using nitrogen as carrier gas, wherein the zinc oxide nano-layer has a needle-like structure; the length thereof is 1mu m; and the particle size of zinc oxide particles is about 100 nanometers. The method improves the field emission characteristic of a carbon tube, improves the field emission performance and increases the field emission current density with lower turn-on electric field and good emission stability; and compared with the prior art, the method has the advantages of simple manufacturing process, low cost and good repeatability, is particularly suitable for large-area manufacture, and can perform kinking and clipping.
Description
Technical field
The present invention relates to the photoelectron material technical field, specifically a kind of method that on unsupported carbon nano-tube film, prepares zinc-oxide nano layer structure.
Background technology
Since carbon nanotube was found, an application the most significant that causes because of its its specific structure characteristics was exactly to make carbon nano-tube field emission display, yet low lightness, lack of homogeneity are perplexing the development of carbon nano-tube field emission display all the time.It has been generally acknowledged that high field enhancement factor and low work function are to win the essential factor of excellent field emission characteristic.ZnO is a kind of wide bandgap semiconductor, and have bigger exciton bind energy, very big application prospect is arranged in opto-electronic device, again because its thermostability, special property such as high mechanical strength and chemical stability has caused the interest of people to the field emission characteristic research of its nanostructure.
In recent years, people utilize solution method, molecular beam epitaxy, pulsed laser deposition, the metal-organic chemical vapor deposition equipment method is prepared various One-Dimensional ZnO nanostructure, nano wire for example, nano belt, nanoneedle, the nanometer pencil, nanometer rod etc., and the field emission characteristic of these nanostructures studied, the result shows, has the most advanced and sophisticated easier electronics of launching of those nanostructures, yet up to the present, all one dimension Nano structures are because the further raising of field emission performance often all can only have been limited from top emission electronic in its slick surface.So introduced a kind of carbon pipe and zinc oxide bonded structure here, improved the field emission characteristic of carbon pipe, strengthened the field emission performance of carbon pipe, improved an emission, and it is lower to open electric field, launch stability is good.On the other hand, also have a lot of scholars to do much about carbon pipe and zinc oxide structure combining before this, but, structure is before this all used the method for silk screen printing, and as substrate, complex manufacturing technology, cost height, and not bent are cut out difficulty by silicon chip.
Summary of the invention
A kind of method for preparing zinc-oxide nano layer structure on unsupported carbon nano-tube film of providing at the deficiencies in the prior art is provided, it with thermal evaporation with zinc oxide evenly attached to forming zinc-oxide nano layer structure on the film of unsupported carbon nanotube, manufacture craft is simple, cost is low, be fit to large-area manufacturing, especially in the making of semiconducter device, more have wide practical use than silicon chip.
The concrete technical scheme that realizes the object of the invention is: a kind of method for preparing zinc-oxide nano layer structure on unsupported carbon nano-tube film, characteristics be adopt thermal evaporation with zinc oxide evenly attached to forming zinc-oxide nano layer structure on the film of unsupported carbon nanotube, specifically may further comprise the steps:
A, horizontal pipe furnace is preheating to 800～850 ℃ with the speed of 15 ℃/min;
B, metallic zinc powder, oxide powder and zinc, carbon dust mixed with mass ratio at 10: 1: 1 be put in the quartz boat as the attachment material source, quartz boat is put into the horizontal pipe furnace middle part of preheating, get the unsupported carbon nanotube diaphragm of a slice and be placed on place apart from about the about 15cm in attachment material source, collect resultant of reaction as substrate;
C, feeding flow are the nitrogen of 1～2L/min, temperature is controlled at 800～850 ℃, react 20～40min under normal pressure, reaction is closed nitrogen after finishing, and zinc oxide is evenly attached to the approaching transparent membranaceous zinc-oxide nano layer structure that forms one deck white on the unsupported carbon nano-tube film.
The carbon length of tube of described carbon nanotube diaphragm is 5～20 μ m, and diameter is 20～40nm.
Described zinc-oxide nano layer is an acicular structure, and its length is about 1 μ m, and Zinc oxide particles is about 100nm.
The purity of described metallic zinc is: 99.999%; Zinc oxide is analytical pure, and carbon dust is a spectroscopically pure.
The present invention has improved the field emission characteristic of carbon pipe, strengthened field emission performance, improved an emission, and it is lower to open electric field, launch stability is good, have compared with prior art that manufacture craft is simple, cost is low, good reproducibility especially is fit to large-area manufacturing, and can bends, cut out conveniently, have wide practical use.
Description of drawings
Fig. 1 is horizontal pipe furnace structural representation among the present invention
Fig. 2 is the SEM photo with carbon nano-tube film of nanometer layer structure
Embodiment
A, horizontal pipe furnace 1 are made up of the different silica tube of two root radiuses (2), (3) and electrothermal oven silk (4), and its length of bigbore silica tube (2) is 110cm, and diameter is 8cm; Its length of small-bore silica tube (3) is 140cm, diameter is 4cm, small-bore silica tube (3) is inserted the bottom of heavy caliber silica tube (2), its carrier gas port (5) inserts nitrogen, electrothermal oven silk (4) is wrapped in that heavy caliber silica tube (2) is outer to be connected with power supply, horizontal pipe furnace 1 horizontal positioned, and be preheating to 850 ℃ with the speed of 15 ℃/min, test is carried out in small-bore silica tube (3), and nitrogen is as the carrier gas of resultant of reaction.
B, metallic zinc powder, oxide powder and zinc, carbon dust mixed with mass ratio at 10: 1: 1 put into quartz boat (6) as material source, the purity of metallic zinc powder is: 99.999%; Zinc oxide is analytical pure, carbon dust is a spectroscopically pure, quartz boat (6) is placed on the middle part of small-bore silica tube (3), the diaphragm of getting the unsupported carbon nanotube of a slice (7) is placed on apart from the place of the about 15cm of material source of quartz boat (6), collect resultant of reaction as substrate, the carbon length of tube of carbon nanotube (7) is 5～20 μ m, and diameter is 20～40nm.
C, open nitrogen valve, the flow of nitrogen with 1.5L/min fed in the silica tube (3), and temperature is controlled at 850 ℃, and normal pressure is reaction 30min down, reaction is closed nitrogen after finishing, and forms the approaching transparent membranaceous zinc-oxide nano layer structure of one deck white on the carbon nano-tube film of carbon periosteum sheet (7).
Just the present invention will be further described for above embodiment, is not in order to the restriction this patent, all for the present invention's equivalence enforcement, all should be contained within the claim scope of this patent.
Claims (4)
1, a kind of method that on unsupported carbon nano-tube film, prepares zinc-oxide nano layer structure, it is characterized in that adopting thermal evaporation with zinc oxide evenly attached to forming zinc-oxide nano layer structure on the unsupported carbon nano-tube film, specifically may further comprise the steps:
A, horizontal pipe furnace is preheating to 800～850 ℃ with the speed of 15 ℃/min;
B, metallic zinc powder, oxide powder and zinc, carbon dust mixed with mass ratio at 10: 1: 1 be placed in the quartz boat as the attachment material source, quartz boat is put into the horizontal pipe furnace middle part of preheating, get the unsupported carbon nanotube diaphragm of a slice and be placed on place apart from about the about 15cm in attachment material source, collect resultant of reaction as substrate;
C, feeding flow are the nitrogen of 1～2L/min, temperature is controlled at 800～850 ℃, react 20～40min under normal pressure, reaction is closed nitrogen after finishing, and zinc oxide is evenly attached to the approaching transparent membranaceous zinc-oxide nano layer structure that forms one deck white on the unsupported carbon nano-tube film.
2, according to the described method for preparing zinc-oxide nano layer structure on unsupported carbon nano-tube film of claim 1, the carbon length of tube that it is characterized in that described carbon nanotube diaphragm is 5～20 μ m, and diameter is 20～40nm.
3, according to the described method that on unsupported carbon nano-tube film, prepares zinc-oxide nano layer structure of claim 1, it is characterized in that described zinc-oxide nano layer is an acicular structure, its length is about 1 μ m, and Zinc oxide particles is about 100nm.
4,, it is characterized in that the purity of described metallic zinc is: 99.999% according to the described method that on unsupported carbon nano-tube film, prepares zinc-oxide nano layer structure of claim 1; Zinc oxide is analytical pure, and carbon dust is a spectroscopically pure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009100516298A CN101560640A (en) | 2009-05-21 | 2009-05-21 | Method for preparing zinc oxide nano-layer structure on supportless carbon nano-tube film |
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| CNA2009100516298A CN101560640A (en) | 2009-05-21 | 2009-05-21 | Method for preparing zinc oxide nano-layer structure on supportless carbon nano-tube film |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324349A (en) * | 2011-08-07 | 2012-01-18 | 张研 | Zinc oxide (ZnO) nanowire emitter growing on aligned carbon nanotube (ACNT) array template |
| CN103382550A (en) * | 2013-07-18 | 2013-11-06 | 哈尔滨工业大学 | Method for preparing copper-doped zinc oxide nano-comb |
-
2009
- 2009-05-21 CN CNA2009100516298A patent/CN101560640A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324349A (en) * | 2011-08-07 | 2012-01-18 | 张研 | Zinc oxide (ZnO) nanowire emitter growing on aligned carbon nanotube (ACNT) array template |
| CN102324349B (en) * | 2011-08-07 | 2013-08-28 | 上海康众光电科技有限公司 | Zinc oxide (ZnO) nanowire emitter growing on aligned carbon nanotube (ACNT) array template |
| CN103382550A (en) * | 2013-07-18 | 2013-11-06 | 哈尔滨工业大学 | Method for preparing copper-doped zinc oxide nano-comb |
| CN103382550B (en) * | 2013-07-18 | 2016-05-11 | 哈尔滨工业大学 | A kind of method of preparing copper doped zinc oxide nano-comb |
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