CN101559492A - Preparation method of metal nanometer line with controllable size - Google Patents
Preparation method of metal nanometer line with controllable size Download PDFInfo
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- CN101559492A CN101559492A CNA2008100236729A CN200810023672A CN101559492A CN 101559492 A CN101559492 A CN 101559492A CN A2008100236729 A CNA2008100236729 A CN A2008100236729A CN 200810023672 A CN200810023672 A CN 200810023672A CN 101559492 A CN101559492 A CN 101559492A
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Abstract
The invention discloses a preparation method of a metal nanometer line with a controllable size. The method comprises the following steps: first, using a secondary anodic oxidation method to obtain a through hole alumina template which is provided with peripheral aluminum and has the aperture of 30 nm to 70 nm; second, using an ion sputtering method to evaporate a gold film with the thickness of 90 nm to 130 nm on one side of the through hole alumina template , putting one non-evaporated surface of the through hole alumina template upwards, then, dripping an aqueous solution of metal chloride on the through hole alumina template and soaking for 1 hour to 3 hours, and afterwards, cleaning with water and drying; and third, putting the through hole alumina template with the metal nanometer line arranged in a hole into a strong slkali solution to erode the alumina template so as to prepare the metal nanometer line with the controllable size. The invention can evaporate the gold film at one side of the anodic alumina template by the reduction action of aluminum, can deposit the metal nanometer line in a nanometer pore canal of the anodic alumina template with peripheral aluminum, has stronger universality and simple operation and can manually effectively control the size of the prepared metal nanometer line.
Description
Technical field
The present invention relates to a kind of preparation method of nano wire, especially a kind of preparation method of metal nanometer line of controllable size.
Background technology
Metal nanometer line has excellent conducting performance, has a wide range of applications in various electronic equipments.For a long time, people are in the preparation method who studies it untiringly, as " a kind of Fe nanowire and the preparation method " who discloses among the disclosed Chinese invention patent ublic specification of application CN 1843671A on October 11st, 2006.It is intended to provide a kind of wet chemical process to make Fe nanowire.Concrete steps are for after being dissolved in distilled water with solubility divalent iron salt or trivalent iron salt; earlier regulating the pH value with nitric acid or sulfuric acid or hydrochloric acid and ammoniacal liquor is 1～3; again successively to wherein adding surfactant and complexing agent; then; under stirring condition to wherein adding the solution contain reducing agent again; utilize the method for electronation that iron atom is reduced into fe, product after filtration with washing back air drying under nitrogen protection, obtain Fe nanowire.But this preparation method exists weak point, at first, does not have universality, can only make Fe nanowire, and can not make other metal nanometer line; Secondly, manufacture process is numerous and diverse, and required raw material is more, needs to use surfactant and complexing agent, also environment is had certain pollution.Though also have to use template electrochemical deposition or do not have electrochemical deposition method and prepare metal nanometer line, yet, these two kinds of methods are defectiveness all: though can prepare the metal nanometer line of controllable size with electrochemical deposition method, must use direct current or AC power in preparation process; And during with no electrochemical deposition method, be difficult to the length of metal nanometer line is effectively controlled, and before electroless deposition, also need usually carry out complicated modification to the hole wall of template.
Summary of the invention
The technical problem to be solved in the present invention is the limitation that overcomes above-mentioned various technical schemes, and a kind of preparation method with metal nanometer line of universality, controllable size that technical process is easy is provided.
For solving technical problem of the present invention, the technical scheme that is adopted is: the preparation method of the metal nanometer line of controllable size comprises two-step anodization method and chemical deposition, particularly it is finished according to the following steps: the first step, and the aperture of using the two-step anodization method to obtain paripheral zone aluminium is the through hole alumina formwork of 30～70nm; Second step, use the ion sputtering method behind the thick golden film of evaporation a 90～130nm of through hole alumina formwork, earlier the not gold-plated face of through hole alumina formwork is placed up, be added dropwise on the through hole alumina formwork with the aqueous chloride solution of metal again and soak 1～3h, then, it is dry its water to be cleaned the back; The 3rd step placed strong base solution to erode alumina formwork the through hole alumina formwork that is equipped with metal nanometer line in its hole, made the metal nanometer line of controllable size.
Further improvement as the preparation method of the metal nanometer line of controllable size, described two-step anodization method is the acid solution of 0.2～0.4M for elder generation's aluminium flake that periphery is airtight places concentration, in DC voltage is anodic oxidation 3～7h under 20～60V, again it in being the mixed solution of 4～8wt% phosphoric acid of 50～70 ℃ and 1.6～2wt% chromic acid, temperature is soaked 6～10h, then, with it once more after carrying out the anodic oxidation second time 10～14h under the same process conditions, remove the unoxidized aluminium in the back side with copper chloride solution or tin chloride solution earlier, the phosphoric acid solution with 3～7wt% erodes the aluminium oxide barrier layer that is positioned at the bottom, hole again; The purity of described aluminium flake is 〉=99.9%; Described acid solution is oxalic acid solution or sulfuric acid solution; The concentration of the aqueous chloride solution of described metal is 0.25～10mM; The aqueous chloride solution of described metal is gold chloride (HAuCl
44H
2O) aqueous solution, or chloroplatinic acid (H
2PtCl
66H
2O) aqueous solution, or ammonium chloropalladite ((NH
4)
2PdCl
4) aqueous solution, or copper chloride (CuCl
22H
2O) aqueous solution, or nickel chloride (NiCl
26H
2O) aqueous solution, or cobalt chloride (CoCl
26H
2O) aqueous solution; Described drying is in air drying under the normal temperature; Described strong base solution is a sodium hydroxide solution, or potassium hydroxide solution, or lithium hydroxide solution.
Beneficial effect with respect to prior art is, one, use X-ray diffractometer, field emission scanning electron microscope and transmission electron microscope to characterize respectively to the product that makes, from the X-ray diffraction spectrogram that obtains, stereoscan photograph, transmission electron microscope photo and corresponding SEAD photo as can be known: the composition of product is gold, or platinum, or palladium, or copper, or nickel, or cobalt.The form of product is numerous nanometer thread, and the line of thread directly is that 30～60nm, line length are 100nm～20 μ m.Thread one nano wire is made up of the crystal grain of monocrystalline; They are two years old, the formation mechanism and the process of metal nanometer line are, when the metal chloride aqueous solution with after the through hole alumina formwork of paripheral zone aluminium contacts, chlorion in the solution just can be removed the oxide-film on aluminium surface, thereby metallic aluminium is come out fully and the solution metal ion carries out the spontaneous oxidation reduction reaction, so just formed metallic atom.Because the existence of metallic atom concentration gradient, metallic atom will be toward the zone diffusion away from aluminium, and metallic atom will constantly enter nano pore like this, and nucleation on the golden film that is positioned at bottom the duct at first.After more metallic atom entered nano pore, metal grain was just constantly grown up, thereby formed metal nanometer line.Because the diffusion length length difference of metallic atom, thus with the nano pore of aluminium close together in the nano wire that forms longer, and the nano wire that forms in the nano pore away from aluminium is shorter; They are three years old, the preparation method has stronger universality, the metal nanometer line that is equipped with as long as draw up meets following three conditions: the one, and raw material is the soluble metal chloride, because the aluminium flake surface has the natural oxide-film of one deck usually, so must remove it so that metallic aluminium is come out fully, be beneficial to solution and be in contact with it and carry out the spontaneous oxidation reduction reaction, and the small amounts of chlorine ion in the metal chloride aqueous solution just can be removed the oxide-film on aluminium flake surface.The 2nd, the normal reduction potential of metal ion is than aluminium height, and metallic atom just can be reduced out like this.The 3rd, the evaporation of golden film, at the golden film of an evaporation of template, it provides nucleating point in the process that metal nanometer line forms, also promoted the growth of metal nanometer line simultaneously.Prepare required metal nanometer line with regard to available the present invention; Its four, simple to operate, with low cost, the environmentally safe of method belong to the environmental type preparation.Only the reduction by aluminium just can be steamed plated metal nano wire in the nano pore of golden film and paripheral zone anodizing of aluminium aluminum alloy pattern plate in one side, neither needs power supply also need not modify the hole wall of template.These metal nanometer lines are expected to be applied to microelectronic, opto-electronic device and sensor preparation field; Its five, method can be controlled artificially effectively to the size of the metal nanometer line that makes.
Further embodiment as beneficial effect, the one, the two-step anodization method is preferably earlier the aluminium flake that periphery is airtight, and to place concentration be the acid solution of 0.2～0.4M, in DC voltage is anodic oxidation 3～7h under 20～60V, again it in being the mixed solution of 4～8wt% phosphoric acid of 50～70 ℃ and 1.6～2wt% chromic acid, temperature is soaked 6～10h, then, with it once more after carrying out the anodic oxidation second time 10～14h under the same process conditions, remove the unoxidized aluminium in the back side with copper chloride or tin chloride solution earlier, erode the technical process of the aluminium oxide barrier layer that is positioned at the bottom, hole again with the phosphoric acid solution of 3～7wt%, guaranteed that the through hole alumina formwork of making meets the requirements, for the preparation metal nanometer line is laid a good foundation; The 2nd, acid solution is preferably oxalic acid solution or sulfuric acid solution, makes the selection of raw material that bigger leeway be arranged, and is not only convenient flexibly, also is beneficial to suitability for industrialized production; The 3rd, the concentration of the aqueous chloride solution of metal is preferably 0.25～10mM, and the chlorion that not only is beneficial in the solution is removed the oxide-film on aluminium surface, also is easy to make metallic aluminium and solution metal ion to carry out spontaneous redox reaction, and then forms metallic atom.
Description of drawings
Below in conjunction with accompanying drawing optimal way of the present invention is described in further detail.
When Fig. 1 prepares metal nanometer line for using the present invention, the formation mechanism schematic diagram of metal nanometer line;
Fig. 2 is to the composition of the nanowires of gold of the present invention's preparation and the result that microstructure uses PhillipsPW 1700 type X-ray diffraction (XRD) instrument, JEOL JSM-6300 F type field emission scanning electron microscope (SEM) and JEM-200 CX type transmission electron microscope (TEM) to characterize respectively, nanowires of gold among the figure is to be that the aqueous solution of chloraurate of 10mM soaks the porous alumina formwork that one side steams gold, paripheral zone aluminium and obtained in 3 hours with concentration, and the diameter of nanowires of gold is 60nm.Wherein, Fig. 2 a is an XRD spectra, can be found out by it, and the composition of the metal nanometer line that makes is a gold.Fig. 2 b is a low power SEM photo, Fig. 2 c be Fig. 2 b amplification the SEM photo, can see the pattern of the nanowires of gold that makes by it.Fig. 2 d is the TEM photo of single nanowires of gold, and Fig. 2 e is the SEAD figure of Fig. 2 d, illustrates that nanowires of gold is made up of single grain.Fig. 2 f is high-resolution SEM photo, has further confirmed what nanowires of gold was made up of the crystal grain of monocrystalline;
Fig. 3 steams gold for using JEOL JSM-6300 F type field emission scanning electron microscope that the aqueous solution of chloraurate that adopts variable concentrations is soaked one side, the result that the nanowires of gold that the porous alumina formwork of paripheral zone aluminium made after 3 hours characterizes, wherein, Fig. 3 a is the SEM photo of the nanowires of gold that makes of the aqueous solution of chloraurate of 0.25mM for adopting concentration, can find out by it, nanowires of gold is about 100～200nm, Fig. 3 b is the SEM photo of the nanowires of gold that makes of the aqueous solution of chloraurate of 1mM for adopting concentration, can find out by it, nanowires of gold is about 120～220nm, Fig. 3 c is the SEM photo of the nanowires of gold that makes of the aqueous solution of chloraurate of 10mM for adopting concentration, can find out that by it nanowires of gold is about tens microns.This shows that under identical reaction time condition, the concentration of aqueous solution of chloraurate is big more, the length of nanowires of gold is just long more;
Fig. 4 steams gold to adopting concentration as the aqueous solution of chloraurate immersion one side of 10mM for using JEOL JSM-6300 F type field emission scanning electron microscope, the result that the nanowires of gold that makes behind the porous alumina formwork different time of paripheral zone aluminium characterizes, wherein, Fig. 4 a is the SEM photo of the nanowires of gold that obtained in 1 hour of immersion, can find out by it, gold nano line length 1.5 μ m, Fig. 4 b is the SEM photo of the nanowires of gold that obtained in 2 hours of immersion, can find out by it, gold nano line length 2.5 μ m, Fig. 4 c is the SEM photo of the nanowires of gold that obtained in 3 hours of immersion, can find out gold nano line length 15 μ m by it.This shows that under the aqueous solution of chloraurate condition of same concentrations, the time of reaction is long more, nanowires of gold is just long more;
Fig. 5 steams the result that nanowires of gold that porous alumina formwork (electrolyte that is used for oxidation is sulfuric acid solution) golden, paripheral zone aluminium makes after 3 hours characterizes for using JEOL JSM-6300 F type field emission scanning electron microscope to adopting concentration to soak one side as the aqueous solution of chloraurate of 10mM, wherein, Fig. 5 a is a low power SEM photo, Fig. 5 b is a high power SEM photo, can find out by these two photos, the diameter of nanowires of gold is 35nm, with its aperture of preparation be that the aperture of the porous alumina formwork of 30～40nm matches.Hence one can see that, just can obtain the nanowires of gold of different-diameter by the bore dia of control template.
The specific embodiment
At first make or buy aluminium flake from market with conventional method, oxalic acid solution, phosphoric acid solution and sulfuric acid solution as acid solution, aqueous solution of chloraurate, chloroplatinic acid aqueous solution, the ammonium chloropalladite aqueous solution, copper chloride solution, nickel chloride aqueous solution and cobalt chloride solution as the aqueous chloride solution of metal, as sodium hydroxide solution, potassium hydroxide solution and the lithium hydroxide solution of strong base solution, and copper chloride solution and tin chloride solution, deionized water and distilled water.Then,
Embodiment 1
The concrete steps of preparation are: the first step, and it is the acid solution of 0.2M that elder generation's aluminium flake that periphery is airtight places concentration, is anodic oxidation 3h under the 20V in DC voltage; Wherein, the purity of aluminium flake is 99.9%, and acid solution is a sulfuric acid solution.Again it in being the mixed solution of 50 ℃ 8wt% phosphoric acid and 1.6wt% chromic acid, temperature is soaked 6h.Then, with it once more after carrying out anodic oxidation second time 10h under the same process conditions, remove the unoxidized aluminium in the back side with copper chloride solution earlier, phosphoric acid solution with 3wt% erodes the aluminium oxide barrier layer that is positioned at the bottom, hole again, and the aperture that obtains paripheral zone aluminium is the through hole alumina formwork of 30nm.Second step, use the ion sputtering method behind the thick golden film of an evaporation 90nm of through hole alumina formwork, earlier the not gold-plated face of through hole alumina formwork is placed up, be added dropwise on the through hole alumina formwork with the aqueous chloride solution of metal again and soak 1h; Wherein, the concentration of the aqueous chloride solution of metal is 0.25mM, and the aqueous chloride solution of metal is an aqueous solution of chloraurate.Then, it is dry its water to be cleaned the back; Wherein, water is deionized water, and drying is in air drying under the normal temperature.The 3rd step placed strong base solution to erode alumina formwork the through hole alumina formwork that is equipped with nanowires of gold in its hole, and wherein, strong base solution is a sodium hydroxide solution.Make and be similar to shown in Fig. 2～5, and the nanowires of gold of the controllable size shown in the curve among Fig. 2 a.
Embodiment 2
The concrete steps of preparation are: the first step, and it is the acid solution of 0.25M that elder generation's aluminium flake that periphery is airtight places concentration, is anodic oxidation 4h under the 30V in DC voltage; Wherein, the purity of aluminium flake is 99.99%, and acid solution is a sulfuric acid solution.Again it in being the mixed solution of 55 ℃ 7wt% phosphoric acid and 1.7wt% chromic acid, temperature is soaked 7h.Then, with it once more after carrying out anodic oxidation second time 11h under the same process conditions, remove the unoxidized aluminium in the back side with tin chloride solution earlier, phosphoric acid solution with 4wt% erodes the aluminium oxide barrier layer that is positioned at the bottom, hole again, and the aperture that obtains paripheral zone aluminium is the through hole alumina formwork of 40nm.Second step, use the ion sputtering method behind the thick golden film of an evaporation 100nm of through hole alumina formwork, earlier the not gold-plated face of through hole alumina formwork is placed up, be added dropwise on the through hole alumina formwork with the aqueous chloride solution of metal again and soak 1.5h; Wherein, the concentration of the aqueous chloride solution of metal is 1mM, and the aqueous chloride solution of metal is an aqueous solution of chloraurate.Then, it is dry its water to be cleaned the back; Wherein, water is distilled water, and drying is in air drying under the normal temperature.The 3rd step placed strong base solution to erode alumina formwork the through hole alumina formwork that is equipped with nanowires of gold in its hole, and wherein, strong base solution is a sodium hydroxide solution.Make and be similar to shown in Fig. 2～5, and the nanowires of gold of the controllable size shown in the curve among Fig. 2 a.
The concrete steps of preparation are: the first step, and it is the acid solution of 0.3M that elder generation's aluminium flake that periphery is airtight places concentration, is anodic oxidation 5h under the 40V in DC voltage; Wherein, the purity of aluminium flake is 99.9%, and acid solution is an oxalic acid solution.Again it in being the mixed solution of 60 ℃ 6wt% phosphoric acid and 1.8wt% chromic acid, temperature is soaked 8h.Then, with it once more after carrying out anodic oxidation second time 12h under the same process conditions, remove the unoxidized aluminium in the back side with copper chloride solution earlier, phosphoric acid solution with 5wt% erodes the aluminium oxide barrier layer that is positioned at the bottom, hole again, and the aperture that obtains paripheral zone aluminium is the through hole alumina formwork of 50nm.Second step, use the ion sputtering method behind the thick golden film of an evaporation 110nm of through hole alumina formwork, earlier the not gold-plated face of through hole alumina formwork is placed up, be added dropwise on the through hole alumina formwork with the aqueous chloride solution of metal again and soak 2h; Wherein, the concentration of the aqueous chloride solution of metal is 5mM, and the aqueous chloride solution of metal is an aqueous solution of chloraurate.Then, it is dry its water to be cleaned the back; Wherein, water is deionized water, and drying is in air drying under the normal temperature.The 3rd step placed strong base solution to erode alumina formwork the through hole alumina formwork that is equipped with nanowires of gold in its hole, and wherein, strong base solution is a sodium hydroxide solution.Make and be similar to shown in Fig. 2～5, and the nanowires of gold of the controllable size shown in the curve among Fig. 2 a.
Embodiment 4
The concrete steps of preparation are: the first step, and it is the acid solution of 0.35M that elder generation's aluminium flake that periphery is airtight places concentration, is anodic oxidation 6h under the 50V in DC voltage; Wherein, the purity of aluminium flake is 99.99%, and acid solution is an oxalic acid solution.Again it in being the mixed solution of 65 ℃ 5wt% phosphoric acid and 1.9wt% chromic acid, temperature is soaked 9h.Then, with it once more after carrying out anodic oxidation second time 13h under the same process conditions, remove the unoxidized aluminium in the back side with tin chloride solution earlier, phosphoric acid solution with 6wt% erodes the aluminium oxide barrier layer that is positioned at the bottom, hole again, and the aperture that obtains paripheral zone aluminium is the through hole alumina formwork of 60nm.Second step, use the ion sputtering method behind the thick golden film of an evaporation 120nm of through hole alumina formwork, earlier the not gold-plated face of through hole alumina formwork is placed up, be added dropwise on the through hole alumina formwork with the aqueous chloride solution of metal again and soak 2.5h; Wherein, the concentration of the aqueous chloride solution of metal is 8mM, and the aqueous chloride solution of metal is an aqueous solution of chloraurate.Then, it is dry its water to be cleaned the back; Wherein, water is distilled water, and drying is in air drying under the normal temperature.The 3rd step placed strong base solution to erode alumina formwork the through hole alumina formwork that is equipped with nanowires of gold in its hole, and wherein, strong base solution is a sodium hydroxide solution.Make and be similar to shown in Fig. 2～5, and the nanowires of gold of the controllable size shown in the curve among Fig. 2 a.
Embodiment 5
The concrete steps of preparation are: the first step, and it is the acid solution of 0.4M that elder generation's aluminium flake that periphery is airtight places concentration, is anodic oxidation 7h under the 60V in DC voltage; Wherein, the purity of aluminium flake is 99.99%, and acid solution is an oxalic acid solution.Again it in being the mixed solution of 70 ℃ 4wt% phosphoric acid and 2wt% chromic acid, temperature is soaked 10h.Then, with it once more after carrying out anodic oxidation second time 14h under the same process conditions, remove the unoxidized aluminium in the back side with copper chloride solution earlier, phosphoric acid solution with 7wt% erodes the aluminium oxide barrier layer that is positioned at the bottom, hole again, and the aperture that obtains paripheral zone aluminium is the through hole alumina formwork of 70nm.Second step, use the ion sputtering method behind the thick golden film of an evaporation 130nm of through hole alumina formwork, earlier the not gold-plated face of through hole alumina formwork is placed up, be added dropwise on the through hole alumina formwork with the aqueous chloride solution of metal again and soak 3h; Wherein, the concentration of the aqueous chloride solution of metal is 10mM, and the aqueous chloride solution of metal is an aqueous solution of chloraurate.Then, it is dry its water to be cleaned the back; Wherein, water is deionized water, and drying is in air drying under the normal temperature.The 3rd step placed strong base solution to erode alumina formwork the through hole alumina formwork that is equipped with nanowires of gold in its hole, and wherein, strong base solution is a sodium hydroxide solution.Make as Fig. 2, Fig. 3 c, Fig. 4 c and shown in Figure 5, and the nanowires of gold of the controllable size shown in the curve among Fig. 2 a.
Select chloroplatinic acid aqueous solution or the ammonium chloropalladite aqueous solution or copper chloride solution or nickel chloride aqueous solution or cobalt chloride solution more respectively for use as the aqueous chloride solution of metal, potassium hydroxide solution or lithium hydroxide solution as strong base solution, repeat the foregoing description 1～5, make equally as or be similar to shown in Fig. 2～5 the and corresponding metal nano wire that is similar to the controllable size shown in the curve among Fig. 2 a.
Obviously, those skilled in the art can carry out various changes and modification and not break away from the spirit and scope of the present invention to the preparation method of the metal nanometer line of controllable size of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (8)
1, a kind of preparation method of metal nanometer line of controllable size comprises two-step anodization method and chemical deposition, it is characterized in that finishing according to the following steps:
The first step, the aperture of using the two-step anodization method to obtain paripheral zone aluminium is the through hole alumina formwork of 30～70nm;
Second step, use the ion sputtering method behind the thick golden film of evaporation a 90～130nm of through hole alumina formwork, earlier the not gold-plated face of through hole alumina formwork is placed up, be added dropwise on the through hole alumina formwork with the aqueous chloride solution of metal again and soak 1～3h, then, it is dry its water to be cleaned the back;
The 3rd step placed strong base solution to erode alumina formwork the through hole alumina formwork that is equipped with metal nanometer line in its hole, made the metal nanometer line of controllable size.
2, the preparation method of the metal nanometer line of controllable size according to claim 1, it is characterized in that the two-step anodization method is the acid solution of 0.2～0.4M for elder generation's aluminium flake that periphery is airtight places concentration, in DC voltage is anodic oxidation 3～7h under 20～60V, again it in being the mixed solution of 4～8wt% phosphoric acid of 50～70 ℃ and 1.6～2wt% chromic acid, temperature is soaked 6～10h, then, with it once more after carrying out the anodic oxidation second time 10～14h under the same process conditions, remove the unoxidized aluminium in the back side with copper chloride solution or tin chloride solution earlier, the phosphoric acid solution with 3～7wt% erodes the aluminium oxide barrier layer that is positioned at the bottom, hole again.
3, the preparation method of the metal nanometer line of controllable size according to claim 2, the purity that it is characterized in that aluminium flake is 〉=99.9%.
4, the preparation method of the metal nanometer line of controllable size according to claim 2 is characterized in that acid solution is oxalic acid solution or sulfuric acid solution.
5, the preparation method of the metal nanometer line of controllable size according to claim 1, the concentration that it is characterized in that the aqueous chloride solution of metal is 0.25～10mM.
6, the preparation method of the metal nanometer line of controllable size according to claim 5, the aqueous chloride solution that it is characterized in that metal is an aqueous solution of chloraurate, or chloroplatinic acid aqueous solution, or the ammonium chloropalladite aqueous solution, or copper chloride solution, or nickel chloride aqueous solution, or cobalt chloride solution.
7, the preparation method of the metal nanometer line of controllable size according to claim 1 is characterized in that dry is in air drying under the normal temperature.
8, the preparation method of the metal nanometer line of controllable size according to claim 1 is characterized in that strong base solution is a sodium hydroxide solution, or potassium hydroxide solution, or lithium hydroxide solution.
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