CN101554988A - Wafer-grade vacuum encapsulation method for micro-electro-mechanical system - Google Patents
Wafer-grade vacuum encapsulation method for micro-electro-mechanical system Download PDFInfo
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- CN101554988A CN101554988A CNA2009100618982A CN200910061898A CN101554988A CN 101554988 A CN101554988 A CN 101554988A CN A2009100618982 A CNA2009100618982 A CN A2009100618982A CN 200910061898 A CN200910061898 A CN 200910061898A CN 101554988 A CN101554988 A CN 101554988A
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Abstract
A wafer-grade vacuum encapsulation method for a micro-electro-mechanical system belongs the an encapsulation method for a micro-electro-mechanical system, solves the problems of the existing encapsulation methods, leads a micro-vacuum chamber to keep vacuum for long time and meets a requirement that the service life is more than ten years. The method comprises an etching step, an air absorbent deposition step and a bonding step; in the etching step, a concave pitch with corresponding space dimension is etched at the position of a cover plate wafer corresponding to a silicone base MEMES device and a ring-shaped concave trough is etched surrounding the concave pitch; in the air absorbent deposition step, an air absorbent film is deposited in the concave pitch and the concave trough; and in the bonding step, the cover plate wafer and the silicon base are closely boned to each other under a vacuum environment. The method solves the problems that the existing encapsulation method has short vacuum retaining time, low sealing quality, poor reliability and high cost, can keep the vacuum degree in a micro-chamber for long time and greatly impulses the development and generalization of wafer-grade MEMES vacuum encapsulation technology.
Description
Technical field
The invention belongs to the method for packing of MEMS, particularly a kind of wafer-grade vacuum encapsulation method based on wafer bonding technology.
Background technology
The encapsulation of MEMS (MEMS) component vacuum is a kind of encapsulation technology that adopts seal chamber to come to provide for the MEMS element vacuum environment.It can form a vacuum environment around MEMS product chips such as radio frequency, inertia, microelectronic vacuum class, the MEMS device is worked under high vacuum environment, and guarantee that micro-structural wherein has good vibration performance (for example making various mechanical resonators that high quality factor is arranged), make its energy operate as normal, and improve its reliability.Vacuum Package can be divided into device level Vacuum Package and wafer level Vacuum Package.The wafer level Vacuum Package has advantages such as low cost, high yield, scribing safety, thereby has important application prospects.At present MEMS wafer level Vacuum Package mainly adopts two kinds of technology paths: the Vacuum Package of based thin film depositing technics and based on the Vacuum Package of wafer bonding technology.The wafer-grade vacuum encapsulation process of based thin film depositing technics is the enclosed cavity that is formed covering device by deposition film on the sacrifice layer, and the etching release aperture is with etching sacrificial layer on film, and last, another layer film of deposit is realized sealing on this layer film.Vacuum Package based on wafer bonding technology is to have the substrate disk and the cover plate disk Direct Bonding of micro electromechanical structure, and the cover plate disk generally is glass or silicon chip.Bonding can be the form of sealing or semitight, and prevents that MEMS from being polluted in later process.The sealing bonding can carry out in the environment of vacuum or inert gas.
Because the film of based thin film deposit vacuum encapsulation process deposit is very thin, cavity is very little, as easy as rolling off a logly in scribing processes, to damage, bigger external and internal pressure difference makes the Vacuum Package device of based thin film depositing technics have vacuum leak again, and reduce service life.And thicker based on two disks of the Vacuum Package of wafer bonding technology, seepage resistances such as the dissolving diffusion of gas molecule are big, and are less to the influence that vacuum keeps.But, R.Gooch, T.Schimert, the data that people such as W.McCardel are published in the article " Wafer-level vacuum packaging forMEMS " of J.Vac.Sci.Technol.A17 (4) to be provided show, although the material that vacuum seal technology and encapsulation are adopted satisfies airtight requirement, the vacuum that keeps below 10Pa in the miniature vacuum chamber for a long time is very difficult, and the vacuum retentivity all below 56 weeks, does not satisfy the requirement of working life more than 10 years far away.
Summary of the invention
The invention provides a kind of wafer-grade vacuum encapsulation method of MEMS, solve the vacuum retention time that existing wafer-grade vacuum encapsulation method exists short, airtight quality is low, poor reliability, problem that cost is high, make miniature vacuum chamber keep vacuum for a long time, satisfy the requirement in service life more than 10 years.
The wafer-grade vacuum encapsulation method of a kind of MEMS of the present invention comprises:
Etch step: the position etching phase of corresponding silicon chip MEMS device is answered the pit of bulk on the cover plate disk, again around pit etched rings connected in star;
Getter depositing step: deposit Fe Getter Films Prepared in described pit and groove;
The bonding step: under vacuum environment with cover plate disk and the tight bonding of silicon chip.
Described wafer-grade vacuum encapsulation method is characterized in that:
In the described etch step, adopt pit and groove on chemical homophase etching, incorgruous etching or the chemical wet etching technology etching cover plate disk; Described cover plate disk is silicon chip, glass or ceramic material, when the cover plate disk is silicon chip, implements after the etch step, and deposit electric insulation layer on silicon chip is diffused in the cover plate disk to prevent electric current;
In the described getter depositing step, deposition process is a kind of in the following method: magnetron sputtering or serigraphy;
In the described bonding step, bonding method is one or both in anode linkage, fusion bonding, eutectic bonding, the scolder bonding,
Described wafer-grade vacuum encapsulation method is characterized in that:
After the described getter depositing step, increase the bonding material depositing step: between described pit and groove, and outer edge deposit one deck bonding material of groove, bonding material is a kind of in Au, In-Sn alloy or the glass solder; Deposition process is a kind of in the following method: chemical vapour deposition (CVD), sputter, serigraphy or evaporation;
Implement the bonding step then, take eutectic bonding or scolder bonding method, under vacuum environment with cover plate disk and the tight bonding of silicon chip.
The present invention is directed to the vacuum retention time that present wafer level vacuum sealing technique exists short, airtight quality is low, poor reliability, problem that cost is high, on encapsulating structure, innovate, increased the buffering cavity, and in cushion chamber the deposit getter, the gas leak path is become from the external world by middle vacuum buffer chamber, leak in the encapsulation cavity from cushion chamber again, most of gas is cushioned the chamber getter and absorbs, have only minute quantity gas to leak in the encapsulation cavity, thereby guarantee innermost cavity air pressure from cushion chamber; Simultaneously because two disks that use based on the encapsulation of wafer bonding technology are thicker, seepage resistances such as the dissolving diffusion of gas molecule are big, less to the influence that vacuum keeps, thereby can keep the interior vacuum of miniature cavity for a long time, can promote the development and the popularization of wafer-level MEMS vacuum sealing technique greatly.For absolute pressure transducer, accelerometer, angular-rate sensor, gyroscopes etc. adopt the present invention to carry out Vacuum Package, can obtain the approximate zero point or and the higher quality factor of absolute pressure.
Description of drawings
Fig. 1 is the schematic diagram of etch step of the present invention;
Fig. 2 is the schematic diagram of getter depositing step of the present invention;
Fig. 3 is the schematic diagram before the bonding step of the present invention;
Fig. 4 is the schematic diagram after the bonding step of the present invention.
Mark among the figure: cover plate disk 1, pit 2, groove 3, getter 4, silicon chip 5, MEMS device 6, vacuum cavity 7, cushion chamber 8.
The specific embodiment
Embodiment 1:
Etch step: as shown in Figure 1, the position of corresponding silicon chip MEMS device 6 is with the pit 2 of incorgruous etching technics corresponding space size, again around pit etched rings connected in star 3 on silicon cover plate disk 1; Deposit silica electric insulation layer on silicon chip is diffused in the cover plate disk to prevent electric current;
The getter depositing step: as shown in Figure 2, with magnetron sputtering technique deposit Zr-V-Fe Fe Getter Films Prepared 4 in described pit and groove,
The bonding step: shown in Fig. 3,4, use the fusion bonding technology with cover plate disk 1 and silicon chip 5 tight bondings under vacuum environment, described pit 2 promptly forms the vacuum chamber 7 of MEMS device, and annular groove 3 forms cushion chambers 8.
Embodiment 2:
Etch step: as shown in Figure 1, the position of corresponding silicon chip MEMS device 6 adopts chemical homophase etching technics etching phase to answer the pit 2 of bulk on glass cover-plate disk 1, adopts incorgruous etching technics etched rings connected in star 3 around pit again;
The getter depositing step: as shown in Figure 2, with magnetron sputtering technique deposit Zr-Al Fe Getter Films Prepared 4 in described pit and groove,
The bonding step: shown in Fig. 3,4, use eutectic bonding technology with cover plate disk 1 and silicon chip 5 tight bondings under vacuum environment, described pit 2 promptly forms the vacuum chamber 7 of MEMS device, and annular groove 3 forms cushion chambers 8.
Embodiment 3:
Etch step: as shown in Figure 1, the pit 2 of bulk is answered with photoetching etching technics etching phase in the position of corresponding silicon chip MEMS device 6 on silicon cover plate disk 1, again around pit etched rings connected in star 3; Deposit silicon nitride electric insulation layer on silicon chip is diffused in the cover plate disk to prevent electric current;
The getter depositing step: as shown in Figure 2, with silk-screen printing technique deposit Ti-Mo Fe Getter Films Prepared 4 in described pit and groove;
The bonding material depositing step: between pit 2 and groove 3, and the outer edge of groove 3 adopts silk-screen printing technique to apply one deck glass solder;
The bonding step: shown in Fig. 3,4, use the scolder bonding technology with cover plate disk 1 and silicon chip 5 tight bondings under vacuum environment, described pit 2 promptly forms the vacuum chamber 7 of MEMS device, and annular groove 3 forms cushion chambers 8.
Embodiment 4:
Etch step: as shown in Figure 1, the position of corresponding silicon chip MEMS device 6 adopts chemical homophase etching technics etching phase to answer the pit 2 of bulk on glass cover-plate disk 1, adopts incorgruous etching technics etched rings connected in star 3 around pit again;
The getter depositing step: as shown in Figure 2, with silk-screen printing technique deposit Ti-Mo Fe Getter Films Prepared 4 in described pit and groove;
The bonding material depositing step: between pit 2 and groove 3, and outer edge sputter one deck In-Sn alloy of groove 3;
The bonding step: shown in Fig. 3,4, use the scolder bonding technology with cover plate disk 1 and silicon chip 5 tight bondings under vacuum environment, described pit 2 promptly forms the vacuum chamber 7 of MEMS device, and annular groove 3 forms cushion chambers 8.
Claims (3)
1. the wafer-grade vacuum encapsulation method of a MEMS comprises:
Etch step: the position etching phase of corresponding silicon chip MEMS device is answered the pit of bulk on the cover plate disk, again around pit etched rings connected in star;
Getter depositing step: deposit Fe Getter Films Prepared in described pit and groove;
The bonding step: under vacuum environment with cover plate disk and the tight bonding of silicon chip.
2. wafer-grade vacuum encapsulation method as claimed in claim 1 is characterized in that:
In the described etch step, adopt pit and groove on chemical homophase etching, incorgruous etching or the chemical wet etching technology etching cover plate disk; Described cover plate disk is silicon chip, glass or ceramic material, when the cover plate disk is silicon chip, implements after the etch step, and deposit electric insulation layer on silicon chip is diffused in the cover plate disk to prevent electric current;
In the described getter depositing step, deposition process is a kind of in the following method: magnetron sputtering or serigraphy;
In the described bonding step, bonding method is one or both in anode linkage, fusion bonding, eutectic bonding, the scolder bonding,
3. wafer-grade vacuum encapsulation method as claimed in claim 1 or 2 is characterized in that:
After the described getter depositing step, increase the bonding material depositing step: between described pit and groove, and outer edge deposit one deck bonding material of groove, bonding material is a kind of in Au, In-Sn alloy or the glass solder; Deposition process is a kind of in the following method: chemical vapour deposition (CVD), sputter, serigraphy or evaporation;
Implement the bonding step then, take eutectic bonding or scolder bonding method, under vacuum environment with cover plate disk and the tight bonding of silicon chip.
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| CN2009100618982A CN101554988B (en) | 2009-04-30 | 2009-04-30 | Wafer-grade vacuum encapsulation method for micro-electro-mechanical system |
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Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103187349A (en) * | 2011-12-31 | 2013-07-03 | 刘胜 | Fixture with salient point wafer bonding and bonding method thereof |
| CN104022046A (en) * | 2014-06-13 | 2014-09-03 | 中国科学院上海微系统与信息技术研究所 | Mixed wafer level vacuum packaging method and structure based on banding getter |
| CN105236345A (en) * | 2015-09-22 | 2016-01-13 | 杭州士兰微电子股份有限公司 | MEMS (Micro Electro Mechanical System) device, semiconductor device and manufacturing methods thereof |
| CN105277309A (en) * | 2014-07-25 | 2016-01-27 | ams国际有限公司 | CMOS pressure sensor with getter using Ti-w wire embedded in membrane |
| CN105304505A (en) * | 2014-06-17 | 2016-02-03 | 中国科学院上海微系统与信息技术研究所 | Mixed wafer level vacuum packaging method and structure |
| CN105439080A (en) * | 2014-08-28 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | Micro-electro-mechanical system device and forming method thereof |
| CN107851618A (en) * | 2015-10-20 | 2018-03-27 | 雷神公司 | Encapsulation pressure is reduced using external air suction agent |
| CN107963607A (en) * | 2017-10-30 | 2018-04-27 | 罕王微电子（辽宁）有限公司 | A kind of all standing getter wafer scale electronic component and its method for packing |
| CN104003352B (en) * | 2014-06-13 | 2018-07-06 | 中国科学院上海微系统与信息技术研究所 | Mixing wafer-level vacuum encapsulating method and structure based on Fe Getter Films Prepared |
| CN109399551A (en) * | 2018-09-26 | 2019-03-01 | 广西桂芯半导体科技有限公司 | Wafer-level package structure and packaging method |
| CN110562910A (en) * | 2019-08-27 | 2019-12-13 | 华东光电集成器件研究所 | MEMS wafer level vacuum packaging method |
| CN112758884A (en) * | 2021-01-21 | 2021-05-07 | 杭州海康微影传感科技有限公司 | MEMS sensor |
| US11257727B2 (en) | 2017-03-21 | 2022-02-22 | Invensas Bonding Technologies, Inc. | Seal for microelectronic assembly |
| US11380597B2 (en) * | 2017-12-22 | 2022-07-05 | Invensas Bonding Technologies, Inc. | Bonded structures |
| US11600542B2 (en) | 2017-12-22 | 2023-03-07 | Adeia Semiconductor Bonding Technologies Inc. | Cavity packages |
| US11670615B2 (en) | 2016-12-21 | 2023-06-06 | Adeia Semiconductor Bonding Technologies Inc. | Bonded structures |
| US11955393B2 (en) | 2018-05-14 | 2024-04-09 | Adeia Semiconductor Bonding Technologies Inc. | Structures for bonding elements including conductive interface features |
-
2009
- 2009-04-30 CN CN2009100618982A patent/CN101554988B/en not_active Expired - Fee Related
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103187349A (en) * | 2011-12-31 | 2013-07-03 | 刘胜 | Fixture with salient point wafer bonding and bonding method thereof |
| CN104003352B (en) * | 2014-06-13 | 2018-07-06 | 中国科学院上海微系统与信息技术研究所 | Mixing wafer-level vacuum encapsulating method and structure based on Fe Getter Films Prepared |
| CN104022046A (en) * | 2014-06-13 | 2014-09-03 | 中国科学院上海微系统与信息技术研究所 | Mixed wafer level vacuum packaging method and structure based on banding getter |
| CN104022046B (en) * | 2014-06-13 | 2017-07-11 | 中国科学院上海微系统与信息技术研究所 | Mixing wafer-level vacuum encapsulating method and structure based on banding getter |
| CN105304505B (en) * | 2014-06-17 | 2018-07-06 | 中国科学院上海微系统与信息技术研究所 | Mix wafer-level vacuum encapsulating method and structure |
| CN105304505A (en) * | 2014-06-17 | 2016-02-03 | 中国科学院上海微系统与信息技术研究所 | Mixed wafer level vacuum packaging method and structure |
| CN105277309A (en) * | 2014-07-25 | 2016-01-27 | ams国际有限公司 | CMOS pressure sensor with getter using Ti-w wire embedded in membrane |
| CN105439080A (en) * | 2014-08-28 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | Micro-electro-mechanical system device and forming method thereof |
| CN105439080B (en) * | 2014-08-28 | 2017-09-22 | 中芯国际集成电路制造(上海)有限公司 | Mems device and forming method thereof |
| CN105236345A (en) * | 2015-09-22 | 2016-01-13 | 杭州士兰微电子股份有限公司 | MEMS (Micro Electro Mechanical System) device, semiconductor device and manufacturing methods thereof |
| CN107851618A (en) * | 2015-10-20 | 2018-03-27 | 雷神公司 | Encapsulation pressure is reduced using external air suction agent |
| US11670615B2 (en) | 2016-12-21 | 2023-06-06 | Adeia Semiconductor Bonding Technologies Inc. | Bonded structures |
| US11417576B2 (en) | 2017-03-21 | 2022-08-16 | Invensas Bonding Technologies, Inc. | Seal for microelectronic assembly |
| US11257727B2 (en) | 2017-03-21 | 2022-02-22 | Invensas Bonding Technologies, Inc. | Seal for microelectronic assembly |
| CN107963607A (en) * | 2017-10-30 | 2018-04-27 | 罕王微电子（辽宁）有限公司 | A kind of all standing getter wafer scale electronic component and its method for packing |
| US11380597B2 (en) * | 2017-12-22 | 2022-07-05 | Invensas Bonding Technologies, Inc. | Bonded structures |
| US11600542B2 (en) | 2017-12-22 | 2023-03-07 | Adeia Semiconductor Bonding Technologies Inc. | Cavity packages |
| US11948847B2 (en) | 2017-12-22 | 2024-04-02 | Adeia Semiconductor Bonding Technologies Inc. | Bonded structures |
| US11955393B2 (en) | 2018-05-14 | 2024-04-09 | Adeia Semiconductor Bonding Technologies Inc. | Structures for bonding elements including conductive interface features |
| CN109399551A (en) * | 2018-09-26 | 2019-03-01 | 广西桂芯半导体科技有限公司 | Wafer-level package structure and packaging method |
| CN110562910A (en) * | 2019-08-27 | 2019-12-13 | 华东光电集成器件研究所 | MEMS wafer level vacuum packaging method |
| CN112758884A (en) * | 2021-01-21 | 2021-05-07 | 杭州海康微影传感科技有限公司 | MEMS sensor |
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