CN101546856B - Planar superconducting microstrip resonator - Google Patents
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Abstract
The invention relates to a planar superconducting microstrip resonator which comprises a microstrip line comprising an upper-layer superconducting film, a lower-layer superconducting film and a monocrystal medium positioned between the upper-layer and the lower-layer superconducting films, finger-inserting capacitors, a double-helix curved inductor and a blocky capacitor formed together with the ground, wherein the finger-inserting capacitors are parallel to the double-helix curved inductor, and the finger-inserting capacitors are connected with the double-helix curved inductor in parallel, and the finger-inserting capacitors and the double-helix curved inductor which are connected in parallel are connected with the blocky capacitor in series. The planar superconducting microstrip resonator has small volume and less electromagnetic radiation. The planar superconducting microstrip resonator can be used for designing and manufacturing a narrowband superconducting band-pass filter with high performance.
Description
Technical field
The present invention relates to resonator, relate in particular to a kind of planar superconducting microstrip resonator.
Background technology
In the microwave engineering; Superconducting microstrip resonator can be formed the flat superconducting filter (a kind of passive device) of different rank; Use is used for selecting the signal of certain frequency in various microwave devices (like radar, mobile telephone base station, microwave communication device, radio astronomical telescope etc.).At the front end of various microwave receiving systems, often use filter to suppress signal frequency not, the signal frequency that needs is passed through smoothly.High temperature superconduction wave filter is a kind of planar device of processing with high temperature superconducting materia, it by several planar resonator by certain regularly arranged forming.For the band pass filter of manufacturing with common metal, relative bandwidth just is being narrow band filter below 5% usually.The relative bandwidth of high temperature superconduction wave filter can be worth little a lot than this, also compares difficulty but relative bandwidth is less than 0.5%, and reason is the interference of parasitic couplings.Relevant theory is pointed out: the coupling coefficient between the resonator should satisfy following relationship
M in the formula
IjIt is the coupling coefficient between i resonator and j the resonator; FBW is a relative bandwidth, defines its ratio for passband width and centre frequency; G is a normalization electric capacity; J is a characteristic admittance.This formula shows that coupling coefficient M depends on relative bandwidth, also depends on the character of resonator self.Obviously, be that normalization electric capacity g or characteristic admittance J should be closely related with the geometry of planar resonator self.The coupling of two adjacent resonators generations is called adjacent coupled in filter, and this coupling is necessary.But also have coupling between non-conterminous two resonators, this type coupling might cause adverse effect to Filter Design, and this harmful non-adjacent coupled is exactly parasitic couplings (parasitical coupling).When carrying out the design of broadband flat superconducting filter, the parasitic couplings between the resonant element can be ignored.But the situation of arrowband flat superconducting filter is then different fully, and parasitic couplings has often caused destructive interference, and this contradiction is particularly outstanding when bandwidth is near 0.5%, and desirable solution is seen at the end so far.
In addition, owing to receive the restriction (being generally the 2-3 inch) of superconducting thin film substrate size, for the UHF wave band, VHF wave band even be operated in the filter under the low frequency more, traditional distributed resonator is no longer suitable, because according to
λ
0For the frequency in the vacuum is the electromagnetic wavelength of f, c is the light velocity, λ
gFor being ε at relative dielectric constant
ReThe medium medium frequency be the electromagnetic wavelength of f, approximate the length of corresponding frequencies resonator in this kind medium, ε
ReDIELECTRIC CONSTANTS with medium itself
r, dielectric thickness and electromagnetic wavelength are relevant.For example for f=300MHz, the medium MgO (ε that 0.5mm is thick
r=9.67), ε
Re=6.44, λ
g=394mm; For f=300MHz, the medium LaAlO3 (ε that 0.5mm is thick
r=23.6), ε
Re=15.14, λ
g=257mm; It is thus clear that its length is very large, even if the form of the bending of taking to use always can not significantly reduce the resonator volume; Can't place it on the superconducting thin film substrate of 2-3 inch; So for the UHF wave band, VHF wave band even be operated in the filter under the low frequency more, traditional distributed resonator is no longer suitable.Under low frequency, the resonator volume increases in addition, can not reduce parasitic couplings through the distance that increases between the resonator merely, so must find the new method that reduces parasitic couplings, is used for designing narrow band filter.
Traditional planar resonator mainly contains two kinds of versions, promptly distributed and lump type.The research of flat superconducting filter has in recent years obtained significant progress, and corresponding planar resonator also develops and a series of other forms.General designer is many from the area that reduces resonator or change purpose such as coupled modes and go out to send the topological structure of confirming resonant element; For example the folding line planar superconducting microstrip resonator (2002 International Conference on Microwave and Millimeter Wave Technology Proceedings collected works, 168 pages) of Birmingham, GBR university design is exactly an example.
Summary of the invention
In order to solve above-mentioned technical problem; Provide a kind of realize and switch synchronously, the device of asynchronous mapping mode, its purpose is, a kind of planar superconducting microstrip resonator is provided; This planar superconducting microstrip resonator has high Q value; Compact conformation, and can on a slice superconducting thin film, put down this flat superconducting resonator of 10 rank even more VHF wave bands or more low-frequency low electromagnetic, and make parasitic couplings be reduced to negligible degree.
The invention provides a kind of planar superconducting microstrip resonator; This planar superconducting microstrip resonator is made up of microstrip line; Said microstrip line is made up of a upper and lower two-layer superconducting thin film and the monocrystalline medium between said two-layer superconducting thin film; This planar superconducting microstrip resonator comprises the block electric capacity of inserting finger electric capacity, double helix curve inductance and forming with ground; Said slotting finger electric capacity is parallelly connected with said double helix curve inductance, said slotting finger electric capacity and the said double helix curve inductance and the said block capacitances in series of parallel connection.
Said block electric capacity be shaped as straight line, broken line, circle, rectangle, trapezoidal or triangle.
The quantity of the block electric capacity that forms with ground is two.
Insert and refer to that electric capacity intersects opposite polarity between any two adjacent microstrip line bars for the parallel microstrip line bar with block electric capacity connection.
Direction of resonant current in the double helix curve inductance between any two adjacent curves is opposite.
Said double helix curve inductance is at least a circle.
Planar superconducting microstrip resonator volume provided by the invention is little, and electromagnetic radiation is little.Resonator provided by the invention can be used for designing and producing high performance arrowband superconducting bandpass filter.When this resonator group provided by the invention lumped together, in order to satisfy certain coupling relation, they must draw closer together, and so just made entire area compacter.
Description of drawings
Fig. 1 is the sectional view of microstrip line;
Fig. 2 is the first kind of geometry and the charge current distribution schematic diagram of planar superconducting microstrip resonator of the present invention;
Fig. 3 a is second kind of geometry sketch map of planar superconducting microstrip resonator of the present invention;
Fig. 3 b is the third geometry sketch map of planar superconducting microstrip resonator of the present invention;
Fig. 4 a and 4b are the sweep resonators of planar superconducting microstrip resonator of the present invention and conduct same frequency relatively;
Fig. 5 is planar superconducting microstrip resonator coupled structure of the present invention and CHARGE DISTRIBUTION sketch map;
Fig. 6 is according to given frequency=252.45MHz, the dielectric constant of crystal medium LaAlO3=23.6, the superconducting microstrip resonator figure of design;
Fig. 7 is the frequency response curve through the resonator that obtains after the Computer Simulation;
Fig. 8 a is coupled structure and the far field coupling frequency response curve thereof that superconducting resonator is formed among the present invention;
Fig. 8 b is another kind of coupled structure and the far field coupling frequency response curve thereof that superconducting resonator is formed among the present invention;
Fig. 9 is coupled structure and the far field coupling frequency response curve thereof that a kind of single-screw superconducting resonator is formed.
Embodiment
Planar superconducting microstrip resonator provided by the invention comprises: a micro-strip resonantor of being made up of upper and lower two-layer superconducting thin film and the artificial single crystal's medium between two-layer superconducting thin film; It is characterized in that said micro-strip resonantor is made up of three parts: insert finger electric capacity for one group, parallelly connected one group of double helix curve inductance, the one group of block electric capacity that forms with ground of connecting together then.
In above-mentioned technical scheme, said block electric capacity can be straight line, broken line, and circle, rectangle, trapezoidal, triangular form or other arbitrary polygons, two block electric capacity can be identical, also can be different
In above-mentioned technical scheme, said slotting finger electric capacity is that two groups of parallel lines that are connected in block electric capacity intersect, and opposite charge between any two adjacent lines has been formed an electric capacity.
In above-mentioned technical scheme, the direction of resonant current in said one group of double helix curve inductance between any two adjacent curves is opposite.
In above-mentioned technical scheme, said double helix curve inductance can be a circle, two circles, three circles or many arbitrarily circles.
In above-mentioned technical scheme, said block electric capacity is rectangle, and double helix curve inductance is two a structure.
The slotting finger electric capacity of above-mentioned different characteristic, block electric capacity and double helix curve inductance can connect together with combination in any forms a lumped parameter resonator, and the three is independent of each other.
The present invention also provides a kind of brand-new coupled modes.In above-mentioned technical scheme; Said brand-new coupled modes are following: with several second lines shorten from the outside in the slotting finger electric capacity of first resonator; Even excision fully, second resonator inserted the outermost single line bar that refers to electric capacity elongate crooked (like Fig. 5); And extend into first resonator between outside several first and the 3rd lines, these three straight lines have just constituted a kind of brand-new coupled modes that refer to that through inserting electric capacity is realized like this.For the coupled modes between traditional resonator, all be the size that changes coupling coefficient through the distance between the change resonator.The brand-new coupled modes that provide in this patent make the size of coupling coefficient and the range-independence between the resonator; Both can under the situation that does not change resonator coupling size, change the distance between the resonator again so that under the situation that does not change distance between the resonator, change the size of coupling coefficient.
Below in conjunction with accompanying drawing, the present invention is done further detailed description.
First embodiment
With reference to Fig. 1,2, utilize a complete microstrip line, this microstrip line is the superconductive micro-strip line, and its upper strata micro belt conductor 3 is high-temperature superconducting thin film with lower floor's ground plane conductor 1, and the centre is that dielectric constant is the monocrystalline dieelctric sheet of ε r.Form one by one group of slotting electric capacity that refers to, parallelly connected one group of double helix curve inductance, the one group of structure that block electric capacity three parts that form with ground are formed of connecting together then.In the present embodiment, the microstrip line of selecting for use adopts crystal medium LaAlO3, its DIELECTRIC CONSTANTS
r=23.6, the rectangle that block electric capacity is chosen in this structure, it is isometric wide to insert finger electric capacity; The double helix inductance is two; Can reduce the resonator volume to greatest extent like this, and utilize the space to greatest extent, insert the lines of finger electric capacity and the curve of double helix inductance and be wide equidistance.The electric field major part concentrates on to insert and refers to that leakage seldom in the electric capacity during resonance in this structure; The magnetic field major part concentrates in the double helix inductance, the transient resonance opposite current between any two adjacent curves wherein, more than two aspects can make the global radiation of resonator very little.
Fig. 4 b is that present embodiment is according to given frequency f
0=252MHz, the DIELECTRIC CONSTANTS of crystal medium LaAlO3
r=23.6, a superconducting microstrip resonator figure of design, its maximal side is 5.4mm, and maximum hem width is 4.3mm, and the live width of microstrip line is 0.08mm, and distance between centers of tracks is 0.08mm.
Fig. 7 shows the resonance curve that present embodiment obtains through the Computer Simulation measuring and calculating, and the resonance frequency that its peak value is corresponding is 252.451MHz, through calculating nonloaded Q greater than 6000.
In order to embody and the little and compact advantage of resonator volume of the present invention, the present invention has provided a sweep (meanderline) resonator and has done comparison, and Fig. 4 a is according to given frequency f
0=252.45MHz, the DIELECTRIC CONSTANTS of crystal medium LaAlO3
r=23.6, a sweep resonator of design is for the ease of comparing; The live width of microstrip line is identical with the resonator that distance between centers of tracks and the invention described above provide, and is 0.08mm, and the maximum hem width also resonator of the present invention with as above design is identical; Be 4.3mm, in such cases, the maximal side of sweep resonator is 14.16mm; Be about 1.75 times of resonator length of the present invention, this shows that resonator of the present invention can significantly reduce the resonator volume.
Coupling coefficient between two resonators is measured by following method.Two kinds of coupled structures that Fig. 8 a, 8b are made up of two resonators and far field coupling frequency response curve thereof; Distance between two resonators is slightly larger than resonator width; Curve among the figure is the transmission characteristic of this coupled structure, and the frequency that its two peak values are corresponding respectively is f
1, f
2, correlation theory points out that the coupling coefficient k of this coupled structure can use formula (2) to calculate,
Δ f=f in the formula
2-f
1, f
0It is the resonator centre frequency.Can find out that coupling coefficient k is directly proportional with Δ f.
Fig. 9 is coupled structure and the far field coupling frequency response curve thereof that a kind of single conchoid resonator is formed.Single conchoid line resonator is a kind of design form that Birmingham, GBR university announced in 2005, and this resonator structure is also very compact, and in order to guarantee the reliability of comparing result, the frequency of folding line resonator should be adjusted to f
0Interval between=252MHz, two resonators and Fig. 8 a, Fig. 8 b are consistent.By the coupling coefficient that formula (2) is calculated this structure, can find out that the difference on the frequency Δ f of the coupled structure among Fig. 9 is 20 times and 158 times of resonator coupled structure of the present invention among Fig. 8 a and the 8b, thereby proof resonator of the present invention has weak relatively coupled characteristic.
Second embodiment
With a complete superconductive micro-strip line, form one by one group of slotting electric capacity that refers to, parallelly connected one group of double helix curve inductance, the one group of structure that block electric capacity three parts that form with ground are formed of connecting together then.Block electric capacity straight line in the present embodiment is inserted the isometric wide equidistance of finger electric capacity, inserts to refer to that the electric capacity line is a broken line, and the double helix inductance is three circles, and the curve of double helix inductance is wide equidistance, shown in Fig. 3 b.
Present embodiment outer shroud maximal side is 6.4mm, and maximum hem width is 5.2mm, and the live width of microstrip line is 0.4mm, and the inner and outer rings distance between centers of tracks is 0.3mm, and inner and outer rings openend spacing is 0.12mm.
The 3rd embodiment
With a complete superconductive micro-strip line, form one by one group of slotting electric capacity that refers to, parallelly connected one group of double helix curve inductance, the one group of structure that block electric capacity three parts that form with ground are formed of connecting together then.The triangle that block electric capacity is chosen in the present embodiment, it is not isometric not wide to insert finger electric capacity, and the double helix inductance is two, and the curve of double helix inductance is not wide not equidistance.
Present embodiment outer shroud maximal side is 6.0mm, and maximum hem width is 5.2mm, and the live width of microstrip line is 0.5mm, and the inner and outer rings distance between centers of tracks is 0.3mm, and inner and outer rings openend spacing is 0.12mm.
The 4th embodiment
With a complete superconductive micro-strip line, form one by one group of slotting electric capacity that refers to, parallelly connected one group of double helix curve inductance, the one group of structure that block electric capacity three parts that form with ground are formed of connecting together then.What block electric capacity was chosen in the present embodiment is trapezoidal, inserts to refer to that electric capacity is isometric wide, inserts to refer to that the electric capacity line is a broken line, and the double helix inductance is one, and the curve of double helix inductance is not wide not equidistance.
Present embodiment outer shroud maximal side is 5.0mm, and maximum hem width is 4.5mm, and the live width of microstrip line is 0.4mm, and the inner and outer rings distance between centers of tracks is 0.3mm, and inner and outer rings openend spacing is 0.15mm.
The 5th embodiment
With a complete superconductive micro-strip line, form one by one group of slotting electric capacity that refers to, parallelly connected one group of double helix curve inductance, the one group of structure that block electric capacity three parts that form with ground are formed of connecting together then.The irregular polygon that block electric capacity is chosen in the present embodiment is inserted the not isometric wide equidistance of finger electric capacity, inserts to refer to that the electric capacity line is broken line and straight line and deposits that the double helix inductance is two, and the curve of double helix inductance is wide not equidistance.
Present embodiment outer shroud maximal side is 6.4mm, and maximum hem width is 5.2mm, and the live width of microstrip line is 0.4mm, and the inner and outer rings distance between centers of tracks is 0.3mm, and inner and outer rings openend spacing is 0.12mm.
The 6th embodiment
With a complete superconductive micro-strip line, form one by one group of slotting electric capacity that refers to, parallelly connected one group of double helix curve inductance, the one group of structure that block electric capacity three parts that form with ground are formed of connecting together then.Broken line of choosing of block electric capacity is chosen inverted-triangular for one in the present embodiment, inserts to refer to the not isometric not wide equidistance of electric capacity, inserts to refer to that the electric capacity line is a broken line, and the double helix inductance is one, and the curve of double helix inductance is not wide equidistance.
Present embodiment outer shroud maximal side is 6.4mm, and maximum hem width is 5.2mm, and the live width of microstrip line is 0.4mm, and the inner and outer rings distance between centers of tracks is 0.3mm, and inner and outer rings openend spacing is 0.12mm.
The 7th embodiment
With a complete superconductive micro-strip line, form one by one group of slotting electric capacity that refers to, parallelly connected one group of double helix curve inductance, the one group of structure that block electric capacity three parts that form with ground are formed of connecting together then.The circle that block electric capacity is chosen in the present embodiment, it is isometric wide to insert finger electric capacity, and the double helix inductance is one, inserts the lines of finger electric capacity and the curve of double helix inductance and is wide equidistance, shown in Fig. 3 a.
Present embodiment outer shroud maximal side is 6.0mm, and maximum hem width is 5.2mm, and the live width of microstrip line is 0.5mm, and the inner and outer rings distance between centers of tracks is 0.3mm, and inner and outer rings openend spacing is 0.12mm.
The technology of the making microstrip line that relates among the present invention is a kind of prior art.Fig. 1 is the sectional view of microstrip line.Figure is micro belt conductor 3 at the middle and upper levels, and the centre is a medium 2, and lower floor is a ground plane conductor 1.Microstrip line among the present invention is the superconductive micro-strip line, and its upper strata micro belt conductor 3 is high-temperature superconducting thin film with lower floor's ground plane conductor 1, and the centre is that dielectric constant is ε
rThe monocrystalline dieelctric sheet.The microstrip line geometry of mentioning among the present invention refers to the geometry that upper strata micro belt conductor 3 constitutes.When the design micro-strip resonantor, dielectric thickness h, DIELECTRIC CONSTANTS
rBe known, resonance frequency f
0Also given with quality factor q.
Design work utilizes microwave simulation software (like sonnet or ansoft) to carry out concrete operations and emulation on computers among the present invention
Superconducting microstrip resonator among the present invention is made by conventional process, promptly makes by processing steps such as photoetching, dry etching, cutting, assemblings, belongs to those skilled in the art's known technology.
Those skilled in the art can also carry out various modifications to above content under the condition that does not break away from the definite the spirit and scope of the present invention of claims.Therefore scope of the present invention is not limited in above explanation, but confirm by the scope of claims.
Claims (7)
1. planar superconducting microstrip resonator; This planar superconducting microstrip resonator is made up of microstrip line; Said microstrip line is made up of a upper and lower two-layer superconducting thin film and the monocrystalline medium between said two-layer superconducting thin film; It is characterized in that; This planar superconducting microstrip resonator comprises the block electric capacity of inserting finger electric capacity, double helix curve inductance and forming with ground, and said slotting finger electric capacity is parallelly connected with said double helix curve inductance, said slotting finger electric capacity and the said double helix curve inductance and the said block capacitances in series of parallel connection.
2. planar superconducting microstrip resonator as claimed in claim 1 is characterized in that, said block electric capacity be shaped as straight line, broken line, circle, rectangle, trapezoidal or triangle.
3. planar superconducting microstrip resonator as claimed in claim 2 is characterized in that, the quantity of the block electric capacity that forms with ground is two.
4. planar superconducting microstrip resonator as claimed in claim 1 is characterized in that, inserts to refer to that electric capacity intersects opposite polarity between any two adjacent microstrip line bars for the parallel microstrip line bar with block electric capacity connection.
5. planar superconducting microstrip resonator as claimed in claim 1 is characterized in that, the direction of resonant current in the double helix curve inductance between any two adjacent curves is opposite.
6. planar superconducting microstrip resonator as claimed in claim 1 is characterized in that, said double helix curve inductance is at least a circle.
7. planar superconducting microstrip resonator as claimed in claim 1 is characterized in that, said slotting finger electric capacity, block electric capacity and double helix curve inductance connect together forms a lumped parameter resonator.
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| CN101841077B (en) * | 2010-04-30 | 2013-05-22 | 中国科学院物理研究所 | Tunable filter resonator and manufacturing method thereof |
| CN102891352B (en) * | 2011-07-19 | 2015-04-29 | 深圳市信维通信股份有限公司 | Antenna unit, antenna and antenna matching device with antenna unit |
| CN102496764B (en) * | 2011-12-30 | 2014-07-16 | 清华大学 | Variable frequency superconducting microstrip line resonator |
| CN104837292B (en) * | 2015-04-27 | 2018-02-23 | 华东师范大学 | A kind of plane low power microwave microplasma linear array source |
| CN105576336B (en) * | 2016-02-26 | 2018-09-25 | 绍兴文理学院 | A kind of superconducting microstrip resonator of remote harmonics |
| CN105870568B (en) * | 2016-05-13 | 2019-04-12 | 电子科技大学 | A kind of balance filter of HTS Resonator and its composition |
| US10164724B2 (en) | 2016-09-26 | 2018-12-25 | International Business Machines Corporation | Microwave combiner and distributer for quantum signals using frequency-division multiplexing |
| CN106410338B (en) * | 2016-11-18 | 2020-12-18 | 桂林电子科技大学 | High-temperature superconducting filter |
| US10553531B2 (en) * | 2017-09-20 | 2020-02-04 | Qualcomm Incorporated | Process-invariant resistor and capacitor pair |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1607695A (en) * | 2003-10-16 | 2005-04-20 | 海泰超导通讯科技（天津）有限公司 | Micro band filter with fork-shaped hair pin type structure for microwave communication |
| CN1622389A (en) * | 2003-11-24 | 2005-06-01 | 海泰超导通讯科技（天津）有限公司 | Resonator with symmetric double helix structure and filter thereof |
| CN1901275A (en) * | 2005-07-19 | 2007-01-24 | 中国科学院物理研究所 | Plane high temperature super conductive microstrip resonator with low electromagnetic radiation |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1607695A (en) * | 2003-10-16 | 2005-04-20 | 海泰超导通讯科技（天津）有限公司 | Micro band filter with fork-shaped hair pin type structure for microwave communication |
| CN1622389A (en) * | 2003-11-24 | 2005-06-01 | 海泰超导通讯科技（天津）有限公司 | Resonator with symmetric double helix structure and filter thereof |
| CN1901275A (en) * | 2005-07-19 | 2007-01-24 | 中国科学院物理研究所 | Plane high temperature super conductive microstrip resonator with low electromagnetic radiation |
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