CN101540369A - Phase change memory device - Google Patents
Phase change memory device Download PDFInfo
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- CN101540369A CN101540369A CNA2009100098564A CN200910009856A CN101540369A CN 101540369 A CN101540369 A CN 101540369A CN A2009100098564 A CNA2009100098564 A CN A2009100098564A CN 200910009856 A CN200910009856 A CN 200910009856A CN 101540369 A CN101540369 A CN 101540369A
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- 230000008859 change Effects 0.000 title claims abstract description 52
- 239000000203 mixture Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 4
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 3
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 23
- 239000000956 alloy Substances 0.000 claims description 23
- 238000002844 melting Methods 0.000 claims description 10
- 238000004455 differential thermal analysis Methods 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 4
- 238000003860 storage Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 abstract description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 description 37
- 238000005516 engineering process Methods 0.000 description 18
- 238000002425 crystallisation Methods 0.000 description 15
- 230000008025 crystallization Effects 0.000 description 15
- 238000000034 method Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 6
- 229910005542 GaSb Inorganic materials 0.000 description 5
- 229910001245 Sb alloy Inorganic materials 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 150000001786 chalcogen compounds Chemical class 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000001757 thermogravimetry curve Methods 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000005300 metallic glass Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- 230000003068 static effect Effects 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
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Abstract
A phase change memory device is disclosed, including a substrate, a phase change layer over the substrate, a first electrode electrically connecting a first side of the phase change layer, a second electrode electrically connecting a second side of the phase change layer, wherein the phase change layer composes mainly of gallium (Ga), antimony (Sb) and tellurium (Te) and unavoidable impurities, having the composition range of GaxTeySbz, 5<x<40; 8<=y<48; 42<x<80; and x+y+z=100.
Description
Technical field
The present invention relates to a kind of phase-change memory, particularly relate to a kind of phase change memory material of phase-change memory.
Background technology
Ovonics unified memory has competitive characteristics such as speed, power, capacity, reliability, process integration degree and cost, is fit to be used as the stand alone type or the Embedded memory application of higher density.Because the unique advantage of Ovonics unified memory technology, make it be considered to might replace very much volatile memory such as highly competititve static memory SRAM of present commercialization and dynamic random access memory DRAM, with the non-volatile memory technologies of flash memory Flash, and be expected to become the new generation semiconductor memory that will have potentiality future.
Chalcogen compound (chalcogenide) is used in phase-change memory widely, the chemical element of the 6th family (for example sulphur, selenium or tellurium) is the main material of chalcogen compound, and the element combination of itself and the 4th family or the 5th family, and some impurity that mix are to be applied to phase-change memory.Ge
2Sb
2Te
5Be the most frequently used material of phase-change memory, reason is that it can provide the switch of binary condition by phase change fast and repeatably between amorphous state (having high relatively resistance) and crystalline state (having relative low resistance).Yet, Ge
2Sb
2Te
5Still have following shortcoming: for example low crystallization temperature, low resistance, the composition of crystalline state mainly comprises selenium when high melting temperature, and selenium has high volatile volatile and toxicity, easily process chamber and environment is polluted.Therefore, industry needs new phase-transition material, with the usefulness of lifting phase-change memory, and the pollution that alleviates environment.
Summary of the invention
According to the problems referred to above, the invention provides a kind of phase-change memory, comprise substrate, phase change layer is positioned at the substrate top, first electrode electrically connects first side of phase change layer, second electrode electrically connects second side of phase change layer, and wherein phase change layer mainly comprises Ga, Sb, Te and the alloy that some are necessary, and the compositing range of this phase change layer is:
Ga
xTe
ySb
z
5＜x＜40; 8＜y＜48; 42＜z＜80, and x+y+z=100.
The present invention provides a kind of phase-change memory in addition, comprise substrate, phase change layer is positioned at the substrate top, and first electrode electrically connects first side of phase change layer, second electrode electrically connects second side of phase change layer, and wherein phase change layer has the state of two stable phases.
Description of drawings
Fig. 1 shows the design and the research of the alloy composition of embodiment of the invention phase-transition material.
Fig. 2 shows embodiment of the invention phase-transition material Ga
20Te
30Sb
50With traditional phase-transition material Ge
2Sb
2Te
5Melting temperature and the comparison of crystallization temperature.
Fig. 3 shows the crystallization temperature of embodiment of the invention alloy and the ratio (T between crystallization temperature and melting temperature
x/ T
m).
Fig. 4 shows the resistance after the crystallization of embodiment of the invention alloy.
The graph of a relation of Fig. 5 displays temperature and resistance, relatively the present invention (Ga
20Te
30Sb
50) alloy (Ge of example alloy and known technology
2Sb
2Te
5) film.
Fig. 6 shows the technology of embodiment of the invention use Ga-Te-Sb alloy as the phase-change memory of phase-transition material.
Fig. 7 shows that the invention process example is at heating Ga
20Te
30Sb
50During the film example, use the thermogram of differential thermal analysis (DTA).
Fig. 8 shows that the invention process example uses Ga
20Te
30Sb
50As the program current of the phase-change memory of phase-transition material and the graph of a relation of resistance.
Fig. 9 A and Fig. 9 B compare the present invention (Ga for showing the graph of a relation of out-of-service time (failure time) and 1/KT
20Te
30Sb
50) alloy (Ge of example alloy and known technology
2Sb
2Te
5) data holding time of film.
Figure 10 A shows the invention process example Ga
20Te
30Sb
50The graph of a relation of program current and resistance.
Figure 10 B shows the invention process example Ga
20Te
30Sb
50The resistance ratio of putting in order and the graph of a relation of pulse duration.
Figure 11 shows example Ga of the present invention
20Te
30Sb
50The graph of a relation of number of cycles and impedance.
Description of reference numerals
502～substrate;
504～bottom electrode;
506～insulating barrier;
508～phase change layer;
510～top electrode;
512～opening.
Embodiment
Below go through the manufacturing and the use of the embodiment of the invention, yet according to notion of the present invention, it can comprise or apply to technical scope widely.It is noted that these embodiment are only in order to disclose the ad hoc approach of manufacturing of the present invention and use, not in order to limit the present invention.
Tradition is based on the phase-transition material Ge of chalcogen compound
2Sb
2Te
5Have many advantages, poor, the high crystallization temperature of the high resistance between crystalline state and amorphous state for example, however it still has many shortcomings to need to improve.
The design of the alloy composition of embodiment of the invention phase-transition material and research and defining are in the scope of following some I, II, III, IV, V and VI with Fig. 1, and it comprises the composition of two series, and A, B, C, D and E are along Sb
80Te
20-GaSb oblique line (oblique line 1) and F, G, H, I and J are along Sb
2Te
3-GaSb oblique line (oblique line 2).The composition of above-mentioned material can following formulate:
Ga
xTe
ySb
z
5＜x＜40; 8＜y＜48; 42＜z＜80, and x+y+z=100, wherein the present invention is especially at x=20, y=30, z=50; X=18, y=12, z=70; X=25, y=8, three compositions of z=67 are studied, and the composition of above three examples is respectively Ga
20Te
30Sb
50, Ga
176Te
11.8Sb
70.6And Ga
25Te
8Sb
67
The present invention can use the known technology of any this technology, prepare designed alloy and form the target that designs the alloy structure layer, in addition, the present invention can use the known deposition technique of any this technology, form the phase change layer of phase-change memory, it is including but not limited to vacuum evaporation technology (for example hot evaporation or electron beam steaming degree); Sputter technology (for example direct current DC sputter, radio frequency sputter, magnetic control sputtering plating, symmetry (symmetric) sputter or asymmetric (non-symmetric) sputter); Or vacuum ion plating membrane technology (vacuum ion plating).In addition, the present invention can use any chemical vapour deposition technique known in the art, forms the phase change alloy.The present invention uses the magnetic control sputtering plating technology to form film in following embodiment, and uses two targets (GaSb and Sb simultaneously
80Te
20), form the example of forming along oblique line 1 (forming A to E), use target (GaSb and Sb
2Te
3), form the example of forming along oblique line 2 (forming F to J).In addition, present embodiment is adjusted at the sputter energy of target, forms required film and forms.
Table 1
Table 1 shows the result of the quantitative analysis of embodiment of the invention film, wherein S
8T
2Represent Sb
80Te
20, GS represents GaSb, and it is made for reference, and table 1 shows the composition of A to E.
The above embodiment of the present invention is with traditional phase-transition material Ge
2Sb
2Te
5Ge replace with Ga, wherein the atomicity of Ga is only little by 1 than Ge, therefore, atomic radius and the Ga of Ge are similar, make above-mentioned replacement can obtain stable lattice arrangement.In addition, as shown in Figure 2,, therefore can effectively reduce Ga because the melting temperature of Ga only has 29.8 ℃
20Te
30Sb
50Melting temperature, reducing the operating energy of assembly, and the crosstalk problem of (thermal cross-talk) of the heat that reduces small size components.
Fig. 3 shows the crystallization temperature of embodiment of the invention alloy.As shown in the figure, when Ga concentration increases, the crystallization temperature (T of alloy
x), and the ratio (T between crystallization temperature and melting temperature
x/ T
m) increase, on behalf of the Ga-Te-Sb alloy, it good thermal stability can be provided.
Fig. 4 shows the resistance of non-crystaline amorphous metal after carrying out crystallization of deposition.As shown in the figure, when the concentration of Ga increases within the specific limits, the resistance (R of alloy crystalline
c) and amorphous state and crystalline state between resistance ratio (R
a/ R
c) increase.Because the Ga-Te-Sb alloy has higher resistance at crystalline state, it can reduce replacement (RESET) electric current of phase-change memory, and can therefore dwindle the size of assembly and the quantity of increase unit area unit.
The graph of a relation of Fig. 5 displays temperature and resistance is to the present invention (Ga
20Te
30Sb
50) alloy (Ge of example alloy and known technology
2Sb
2Te
5) compare.Shown in figure, traditional Ge
2Sb
2Te
5Alloy produces phase change for the first time in the time of 170 ℃, and produces phase change for the second time in the time of 300 ℃.Clearly, the alloy of this known technology is between the first and second phase change points, and resistance is quite responsive to variation of temperature, and this kind phenomenon may make the change that the waste heat of assembly operation has a resistance, and therefore influences the stability of assembly.In comparison, example phase-transition material (Ga of the present invention
20Te
30Sb
50) have more stable crystallization resistance, and when temperature increased, its crystallization resistance can not change significantly.
Below cooperate Fig. 6 to describe in detail compared to known Ge
2Sb
2Te
5The phase-transition material and the embodiment of the invention are used the Ga-Te-Sb alloy, and (cell size is 200nm * 200nm), wherein known Ge as the technology of the phase-change memory of phase-transition material
2Sb
2Te
5Phase-transition material is as comparative example.The for example substrate 502 of silicon is provided, can forms for example resilient coating of silica (not illustrating) in the substrate 502.Deposition bottom electrode 504 is in substrate 502, and in the present embodiment, bottom electrode 504 comprises that thickness is about the TiN layer of 50nm and the Ti layer that thickness is about 150nm.With the graphical bottom electrode 504 of gold-tinted photoetching technique, with the definition contact zone.The insulating barrier 506 that forms oxide for example is on bottom electrode 504, and then patterned insulator layer is to form opening 512.Deposit the thick phase change layer 508 of about 100nm on insulating barrier 506, and insert in the opening 512, wherein phase change layer 508 can be the Ga of present embodiment
2Te
2Sb
5The comparative example of alloy or the conduct of known Ge-Te-Sb phase-transition material.Afterwards, on phase change layer 508, form for example top electrode 510 of TaN, then assembly is placed in the boiler tube so that phase change layer 508 is carried out tempering, so that it converts crystalline state to.
Fig. 7 shows that the embodiment of the invention is at heating Ga
20Te
30Sb
50During the film example, use differential thermal analysis (differential thermo-analysis, thermogram DSC).It should be noted that, this phase-transition material has the fusing point of inconsistent (incongruent), and because this characteristic, make phase-transition material at differential thermal analysis (differential thermal analysis, DTA) or differential scanning calorimetric amount (differential scanningcalorimetry, DCS) have two endothermic peaks in, DTA curve as shown in Figure 7.Therefore, shown in the graph of a relation of the program current of Fig. 8 and resistance, this phase-transition material has the state (state 1 and state 2) of two stable phases, and this feature is because the phase-transition material of present embodiment has two endothermic peaks.When this material applies electric current to specific temperature, the composition fusing of first inconsistent (incongruent) forms liquid temporarily, and after it via around environment be cooled to amorphous state (unit volume partly) fast.Remaining crystalline state mixes in amorphous state that forms and the unit earlier, forms resistance ratio crystalline state height, but the metastable intermediate state lower than amorphous state (metastable intermediate state).Because electrical tissue state in the middle of this, this phase-transition material unit cell can have unnecessary memory position.In other words, phase-transition material of the present invention can be noted down three positions of unit cell.For instance, use the storage device of this phase-transition material that three positions (0,1,2) can be arranged, and memory capacity can be by traditional 2
nIncrease to 3
n
Table 2
| T x(℃) | T m(℃) | T x/T m | R c(-cm) | R a/R c | |
| Ge 2Sb 2Te 5 | 157 | 613 | 0.485 | 3.0e-3 | 2.5e5 |
| Ga 20Te 30Sb 50 | 237 | 563 | 0.61 | 6.5e-3 | 4.4e4 |
| Ga 18Te 12Sb 70 | 232 | 573.6 | 0.596 | 1.45e-3 | 6.8e3 |
| Ga 25Te 8Sb 67 | 277 | 567.5 | 0.65 | 1.9e-3 | 1.1e4 |
Table 2 shows traditional Ge
2Sb
2Te
5With three embodiment examples of the present invention Ga
20Te
30Sb
50, Ga
18Te
12Sb
70, Ga
25Te
8Sb
67The comparison of phase change layer.Shown in so showing, Ga
20Te
30Sb
50Example is compared to traditional Ge
2Sb
2Te
5, at crystalline state (R
c) present higher resistance, therefore can reduce replacement (Reset) electric current of phase-change memory.In addition, the present embodiment phase-transition material has higher crystallization temperature and T
x/ T
m, this characteristic can reduce known Ovonics unified memory material Ge
2Sb
2Te
5The problem of generation, therefore can reduce the size of assembly and increase the number of unit area memory cell.Table 2 shows that in addition the phase-transition material of three examples of the present invention has quite high T
x/ T
mTo such an extent as to, can present goodish thermal stability.Two other example is formed (Ga
18Te
12Sb
70And Ga
25Te
8Sb
67) have and Ge
2Sb
2Te
5Close R
cResistance, but it has lower melting temperature, to reduce the required energy of instant melting (replacement) memory cell.Therefore, the phase-transition material of above-mentioned example can be used for the high density phase change memory.
Fig. 9 A and Fig. 9 B show the graph of a relation of out-of-service time (failure time) and 1/KT, to compare this example Ga
20Te
30Sb
50With traditional Ge
2Sb
2Te
5Data are preserved (data retention).Shown in Fig. 9 A and Fig. 9 B, because Ga
20Te
30Sb
50Higher activation energy (activation energy, it is proportional to the potential barrier of amorphous state and crystalline state) is arranged, comprise that the assembly of this example materials is estimated and can be preserved data 1,000,000 years under the condition of 120 ℃ of temperature.Yet, comprise traditional material Ge
2Sb
2Te
5Assembly under identical condition, only can preserve data 4.2 hours.Therefore, the phase-transition material of this embodiment of the present invention has suitable good data preservation characteristics.
Table 3
| Impulse density (ns) | Reset (Ω) | ΔR＝Rreset-Rset (Ω) | According to the R500ns standardization | Ratio (%) |
| 20 | 2046 | 14423 | 0.920299 | 92.0 |
| 40 | 1318 | 15150 | 0.966728 | 96.7 |
| 60 | 1109 | 15360 | 0.980081 | 98.0 |
| 80 | 1020 | 15448 | 0.985739 | 98.6 |
| 100 | 964 | 15504 | 0.989308 | 98.9 |
| 300 | 856 | 15612 | 0.996204 | 99.6 |
| 500 | 797 | 15671 | 1 | 100 |
Table 3 shows example Ga of the present invention
20Te
30Sb
50Program speed analysis between pulse duration (pulse width) 20ns～500ns.Figure 10 A shows this example Ga
20Te
30Sb
50The graph of a relation of program current and resistance.In table 3, this example measures setting resistance (Rset) in the condition of various pulse durations, and its average replacement resistance (20ns～500ns resets with pulse duration) is 16468 Ω.Δ R deducts setting resistance Rset by average replacement resistance Rreset (16468 Ω) and obtains.This analysis this with the condition of the Δ R (15671) of pulse duration 500ns as benchmark, so that the Δ R of various different pulse duration conditions and the Δ R of pulse duration 500ns are compared.Last hurdle that the results are shown in table 3 relatively, and it is drawn on Figure 10 B.Please refer to table 3 and Figure 10 B, as this example phase-transition material Ga
20Te
30Sb
50When applying the 20ns pulse duration, it is compared to the condition that applies the 500ns pulse duration, can reach the replacement condition approximately and impose a condition between 92% resistance difference.Therefore, but have very fast program speed according to above-mentioned inference example of the present invention.
Figure 11 shows example Ga of the present invention
20Te
30Sb
50The graph of a relation of number of cycles (number of cycles) and impedance.As shown in figure 11, example of the present invention can reach 2 * 10 approximately
5Number of cycles, and its result shows that example of the present invention has the performance of good reliability.
The present invention uses the advantage of the phase-change memory of Ga-Te-Sb material to be obtained to confirm by above experimental data.At first, it is compared to traditional Ge
2Sb
2Te
5Alloy has suitable and higher crystallization temperature (T
x) and lower melting temperature, therefore assembly of the present invention has the problem of less crosstalking (cross talk) and lower replacement energy.The second, disclosed phase-transition material has higher crystallization temperature (T simultaneously
x) and activation energy (activation energy), and make storage device have higher thermal stability, and can under 161 ℃ temperature, operate 10 years.The 3rd, the composition of some embodiments of the invention can reach three positions of unit cell, therefore can reach higher memory capacity under identical size.The 4th, the phase-transition material of the embodiment of the invention has less Te, therefore compared to traditional Ge
2Sb
2Te
5Alloy, its cleaning procedure and all lower to the influence of environment.
The embodiment that more than provides is in order to the different technical characterictic of description the present invention, but according to notion of the present invention, it can comprise or apply to technical scope widely.It is noted that, embodiment is only in order to disclose the ad hoc approach of technology of the present invention, device, composition, manufacturing and use, not in order to limit the present invention, any personnel that have the knack of this technology, without departing from the spirit and scope of the present invention, when doing a little change and retouching.Therefore, protection scope of the present invention defines and is as the criterion when looking claim.
Claims (13)
1. phase-change memory comprises:
Substrate;
Phase change layer is positioned at this substrate top;
First electrode electrically connects first side of this phase change layer;
Second electrode electrically connects second side of this phase change layer;
Wherein this phase change layer mainly comprises Ga, Sb, Te and the alloy that some are necessary, and the compositing range of this phase change layer is:
Ga
xTe
ySb
z
5＜x＜40；8＜y＜48；42＜z＜80。
2. phase-change memory as claimed in claim 1, wherein this phase change layer comprises Ga-Te-Sb, and its compositing range is Ga
15～25Te
10～32Sb
50～72
3. phase-change memory as claimed in claim 1 wherein is no more than the temperature that 200 ℃ scope increases this phase change layer in temperature, the stable electrical impedance characteristics of this phase change layer performance.
4. phase-change memory as claimed in claim 1, wherein the melting temperature of this phase change layer is less than 600 ℃.
5. phase-change memory as claimed in claim 1, wherein this phase change layer has inconsistent fusing point.
6. phase-change memory as claimed in claim 1, wherein this change layer has two endothermic peaks in differential thermal analysis or differential scanning calorimetric amount.
7. phase-change memory as claimed in claim 1, wherein this phase change layer has the state of two stable phases.
8. phase-change memory as claimed in claim 7, wherein this phase-change memory has two Reset Status, and unit storage unit has three positions.
9. phase-change memory as claimed in claim 1 also comprises the insulating barrier with opening, be positioned between this first electrode and this phase change layer, and this phase change layer is inserted this opening.
10. phase-change memory comprises:
Substrate;
Phase change layer is positioned at this substrate top;
First electrode electrically connects first side of this phase change layer;
Second electrode electrically connects second side of this phase change layer, and wherein this phase change layer has the state of two stable phases.
11. phase-change memory as claimed in claim 10, wherein this phase change layer has inconsistent composition.
12. phase-change memory as claimed in claim 10, wherein this change layer has two endothermic peaks in differential thermal analysis or differential scanning calorimetric amount.
13. phase-change memory as claimed in claim 10, wherein this phase-change memory has two Reset Status, and unit storage unit has three positions.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2537908P | 2008-02-01 | 2008-02-01 | |
| US61/025,379 | 2008-02-01 | ||
| US12/189,087 | 2008-08-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101540369A true CN101540369A (en) | 2009-09-23 |
Family
ID=40930782
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2009100098564A Pending CN101540369A (en) | 2008-02-01 | 2009-01-24 | Phase change memory device |
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| Country | Link |
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| US (1) | US7906774B2 (en) |
| CN (1) | CN101540369A (en) |
| TW (1) | TWI489667B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102610750A (en) * | 2011-01-19 | 2012-07-25 | 旺宏电子股份有限公司 | Quaternary gallium tellurium antimony (m-gatesb) based phase change memory devices |
| CN106257700A (en) * | 2015-06-19 | 2016-12-28 | 旺宏电子股份有限公司 | Ovonics unified memory material, phase-change memorizer device and manufacture method thereof |
| CN110729400A (en) * | 2019-09-03 | 2020-01-24 | 华中科技大学 | Ti-Ga-Sb phase-change material, phase-change memory and preparation method of Ti-Ga-Sb phase-change material |
| CN110729401A (en) * | 2019-09-03 | 2020-01-24 | 华中科技大学 | Ga-Sb-O phase-change material and application and preparation method thereof |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7425735B2 (en) * | 2003-02-24 | 2008-09-16 | Samsung Electronics Co., Ltd. | Multi-layer phase-changeable memory devices |
| US8031518B2 (en) | 2009-06-08 | 2011-10-04 | Micron Technology, Inc. | Methods, structures, and devices for reducing operational energy in phase change memory |
| US8971089B2 (en) * | 2012-06-27 | 2015-03-03 | Intel Corporation | Low power phase change memory cell |
| US9257643B2 (en) * | 2013-08-16 | 2016-02-09 | International Business Machines Corporation | Phase change memory cell with improved phase change material |
| KR20160063067A (en) | 2014-11-26 | 2016-06-03 | 에스케이하이닉스 주식회사 | Resistive Memory Device And Method of Fabricating The Same |
| US9672906B2 (en) | 2015-06-19 | 2017-06-06 | Macronix International Co., Ltd. | Phase change memory with inter-granular switching |
| US10050196B1 (en) | 2017-05-04 | 2018-08-14 | Macronix International Co., Ltd. | Dielectric doped, Sb-rich GST phase change memory |
| US11289540B2 (en) | 2019-10-15 | 2022-03-29 | Macronix International Co., Ltd. | Semiconductor device and memory cell |
| US11362276B2 (en) | 2020-03-27 | 2022-06-14 | Macronix International Co., Ltd. | High thermal stability SiOx doped GeSbTe materials suitable for embedded PCM application |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2003282323A1 (en) | 2002-12-19 | 2004-07-14 | Koninklijke Philips Electronics N.V. | Electric device comprising phase change material |
| TWI260015B (en) * | 2003-12-19 | 2006-08-11 | Tsung-Shune Chin | Ultra-high density phase-change recording media based on the Ga-Sb-Te system |
| TWI277207B (en) * | 2004-10-08 | 2007-03-21 | Ind Tech Res Inst | Multilevel phase-change memory, operating method and manufacture method thereof |
| US7214958B2 (en) * | 2005-02-10 | 2007-05-08 | Infineon Technologies Ag | Phase change memory cell with high read margin at low power operation |
| US7321130B2 (en) | 2005-06-17 | 2008-01-22 | Macronix International Co., Ltd. | Thin film fuse phase change RAM and manufacturing method |
| US7786460B2 (en) | 2005-11-15 | 2010-08-31 | Macronix International Co., Ltd. | Phase change memory device and manufacturing method |
| KR100767333B1 (en) * | 2006-05-24 | 2007-10-17 | 한국과학기술연구원 | Non-volatile electrical phase change memory device comprising interfacial control layer and method for the preparation thereof |
| KR100748557B1 (en) * | 2006-05-26 | 2007-08-10 | 삼성전자주식회사 | Phase-change memory device |
| CN101101962A (en) | 2007-07-26 | 2008-01-09 | 上海交通大学 | Gallium-adulterated Ga3Sb8Te1 phase change memory unit and its making method |
-
2008
- 2008-08-08 US US12/189,087 patent/US7906774B2/en not_active Expired - Fee Related
- 2008-12-15 TW TW097148720A patent/TWI489667B/en not_active IP Right Cessation
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2009
- 2009-01-24 CN CNA2009100098564A patent/CN101540369A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102610750A (en) * | 2011-01-19 | 2012-07-25 | 旺宏电子股份有限公司 | Quaternary gallium tellurium antimony (m-gatesb) based phase change memory devices |
| CN106257700A (en) * | 2015-06-19 | 2016-12-28 | 旺宏电子股份有限公司 | Ovonics unified memory material, phase-change memorizer device and manufacture method thereof |
| CN110729400A (en) * | 2019-09-03 | 2020-01-24 | 华中科技大学 | Ti-Ga-Sb phase-change material, phase-change memory and preparation method of Ti-Ga-Sb phase-change material |
| CN110729401A (en) * | 2019-09-03 | 2020-01-24 | 华中科技大学 | Ga-Sb-O phase-change material and application and preparation method thereof |
| CN110729400B (en) * | 2019-09-03 | 2021-02-23 | 华中科技大学 | Ti-Ga-Sb phase-change material, phase-change memory and preparation method of Ti-Ga-Sb phase-change material |
| CN110729401B (en) * | 2019-09-03 | 2021-08-13 | 华中科技大学 | Ga-Sb-O phase-change material and application and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200935636A (en) | 2009-08-16 |
| TWI489667B (en) | 2015-06-21 |
| US7906774B2 (en) | 2011-03-15 |
| US20090194759A1 (en) | 2009-08-06 |
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Application publication date: 20090923 |