CN101540270A - System and method for monitoring program - Google Patents
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- CN101540270A CN101540270A CN200810086665A CN200810086665A CN101540270A CN 101540270 A CN101540270 A CN 101540270A CN 200810086665 A CN200810086665 A CN 200810086665A CN 200810086665 A CN200810086665 A CN 200810086665A CN 101540270 A CN101540270 A CN 101540270A
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Abstract
The invention relates to a system for monitoring program, which comprises a two-dimensional orthogonal diagram and a marker, wherein the two-dimensional orthogonal diagram is provided with a first shaft which is related to the wafer measurement value of a wafer, and a second shaft which is related to the program total value of a set program, and the two-dimensional orthogonal diagram is provided with a sealing and annular control limit inside; and the marker displays the program total value and the wafer measurement value in the two-dimensional orthogonal diagram.
Description
Technical field
The present invention relates to a kind of system and method for monitoring program.
Background technology
Along with the sustainable development of semiconductor fabrication process, the pattern of semiconductor device is more and more trickleer, and integration is also more and more higher, and is therefore also more and more higher for the requirement of the processing procedure control level of semiconductor product.In process of production, product is that inevitably the fluctuation of processing dimension may be by due to the influence of fluctuations of Fundamentals such as people, machine, material, method and environment in the processing dimension change of each road processing procedure.Some fluctuation is expected, for example the concentration of reaction solution can be diluted gradually along with the growth of time, make that board has been changed new hardware in the program of periodic maintenance and the change gradually that causes processing dimension, or the cataclysm of expection property, belong to the normal fluctuation that is caused by accidental cause (inevitable factor), it is less to the product quality influence, is difficult to technically eliminate, and also is unworthy economically eliminating.But still some is the unusual fluctuations that can't expect, and unusual fluctuations are normally caused by system's reason (abnormal factors), and is very big to the influence of product quality, preferably can take measures to avoid and eliminate.When fluctuation takes place, processing procedure is stable and do not influence under the requirement of production capacity controlling, the engineer must find out the main cause that causes fluctuation effectively in the shortest time, judge the stability of processing procedure rapidly, to allow kinds of goods react by board under safest environment.
The stability of manufacture of semiconductor is generally by processing procedure real-time status monitoring or manufacturing board real-time status monitoring, to reach the purpose of predictability maintenance.At present, the processing procedure real-time status monitoring uses statistical process control technology (Statistical Process Control mostly, SPC), to do parameter through the chip of intact processing procedure measures, to obtain as thickness, the degree of depth, or parameter measuring value such as etch-rate, again in the parameter measuring value input variable raw-data map (run chart) with gained, to observe or to analyze the processing procedure performance in the time period.Make the board real-time status monitoring, (fault detection and classification FDC), makes the actual production and the gross data of the process parameter of board with collection then to utilize detecting fault and categorizing system mostly.
Yet processing procedure and the relevance of making between each system of board are very complicated.In theory, should there be specific relation in the parameter measuring value of chip according to some physical laws (as quality and balancing energy) and the real-world operation situation of making board.For example, in the chemical vapor deposition process section, final thickness that forms on the chip and temperature setting and the reaction time relation maximum in the stable high temperature section.Yet this does not represent at the monitor procedure of making the board real-time status and only notes that the situation of stablizing high temperature section gets final product, if long, the too short or temperature anomaly of reaction time of intensification or temperature descending section also may cause the unusual drift of measuring value of chip parameter.Perhaps, though the measuring value of chip parameter was normal at that time, owing to made the board abnormal state at that time, and cause the electrical measurement drift of final products.Therefore, no matter be statistical process control technology (Statistical Process Control to the processing procedure real-time status monitoring, SPC), or the detecting fault and categorizing system (the fault detection and classification of manufacturing board real-time status monitoring, FDC), both monitor for processing procedure and have important function.
But statistical process control technology and detecting fault and categorizing system are separate operation at present, therefore can lose some important, effective processing procedure monitoring and improve chance.Therefore, the necessary system and method that a kind of novel monitoring program is provided.
Summary of the invention
The objective of the invention is to, provide the analytical technology of a kind of performance statistics processing procedure control technology simultaneously and detecting fault and categorizing system, to improve product quality and the stable effective prediction of processing procedure.
To achieve these goals, the invention provides a kind of system of monitoring program, it comprises: a two-dimensional quadrature figure, it has one relevant with the wafer measuring value of wafer first and one relevant with the processing procedure total value of set processing procedure second, and has the keyholed back plate limit of a closed circular among the two-dimensional quadrature figure; And one indicate body, and it shows that processing procedure total value and wafer measuring value are in two-dimensional quadrature figure.
The present invention also provides a kind of method of monitoring program, and it may further comprise the steps: a wafer is provided, makes in the board one wafer is carried out a set processing procedure, and measure and note down several process parameter values of making board when participating in the cintest simultaneously; After wafer finishes set processing procedure, wafer is carried out a measurement step, to obtain a wafer measuring value; The process parameter value is converted to a processing procedure total value; One two-dimensional quadrature figure is provided, and it has one relevant with the wafer measuring value first and one relevant with the processing procedure total value second, and has the keyholed back plate limit of a closed circular among the two-dimensional quadrature figure; And processing procedure total value and wafer measuring value are indicated body with one be shown among the two-dimensional quadrature figure.
Description of drawings
Below in conjunction with accompanying drawing, describe in detail the specific embodiment of the present invention with and corresponding technique effect, wherein:
Fig. 1 is the flow chart of an execution mode of method of monitoring program of the present invention.
Fig. 2 is in an embodiment of the invention, and wafer is made the corresponding relation that carries out the resulting process parameter value of set processing procedure in the board in one.
Fig. 3 is the processing procedure control chart in embodiment of the present invention.
Fig. 4 is the processing procedure control chart in another embodiment of the present invention.
Wherein: A: the target location; C: keyholed back plate limit; C1: keyholed back plate limit; C2: keyholed back plate limit; C3: keyholed back plate limit; K: indicate body.
Embodiment
Please refer to Fig. 1, it is depicted as the flow chart of an execution mode of method of monitoring program of the present invention: at first carry out step S101: provide a wafer, in a manufacturing board, wafer is carried out a set processing procedure, and measure and note down several process parameter values of making board simultaneously.Wafer carries out in the process of set processing procedure in making board, and the process parameter value of being noted down can comprise temperature, pressure, flow, leak rate, concentration and/or the time value of noting down by a Fixed Time Interval etc.
Please refer to Fig. 1, can carry out step S103 to the wafer after the manufacturing board finishes set processing procedure among the step S101: wafer is carried out a measurement step, to obtain a wafer measuring value.According to an embodiment of the invention, make board single wafer is carried out set processing procedure, after wafer finishes set processing procedure, can carry out measurement step to obtain the wafer measuring value.According to another implementation of the invention, make board a collection of or many batches of wafers are carried out set processing procedure, after a collection of or many batches of wafers finish set processing procedure, can in a collection of or many batches of wafers, select a wafer to carry out measurement step at random or according to the ad-hoc location of making in the board, to obtain the wafer measuring value.According to other execution modes of the present invention, can make production continuously through one period cycle or for several times at the manufacturing board, a wafer after the manufacturing board finishes set processing procedure, is carried out measurement step to wafer, to obtain the wafer measuring value.The wafer measuring value can comprise granule number, electrically, flatness, etch-rate, thickness and/or doping etc.
Please refer to Fig. 1, can carry out step S102: several process parameter values are carried out the conversion Calculation step, to convert a processing procedure total value to the process parameter value of noting down among the step S101.According to an embodiment of the invention, can provide one with reference to the process parameter value, will carry out the conversion Calculation step with reference to process parameter value and several process parameter values, to obtain processing procedure total value corresponding to several process parameter values.According to an embodiment of the invention, the process parameter value can be included in temperature, pressure, flow, leak rate, concentration, time and/or other process parameter values that (the same terms) noted down under Fixed Time Interval or the step.According to another implementation of the invention, the process parameter value can also comprise the pressure of making in the board and reduce to the required time of low pressure (the same terms) (process parameter value) by atmospheric pressure, wafer soaks and places etching solvent to carry out the maximum or the Cmin value (process parameter value) of etching step process (the same terms) etching solvent, or following of other possible process conditions note down value.Therefore, process parameter value described here can be according to engineer's experience, at the process parameter that may influence the wafer measuring value (as in chemical vapor deposition process, grow up film thickness on wafer and the constant temperature total time between the high temperature constant temperature step and thermostat temperature has bigger relation), maybe the process parameter that need pay special attention to (as step-down or broken time of pressing) is done suitable selection.Comprise desired value with reference to the process parameter value, or calculate resulting mean value or optimization numerical value in the historical data corresponding to the process parameter value.
According to an embodiment of the invention, the conversion Calculation step can one or more wafers and the relational matrix of process parameter value do computing.According to an embodiment of the invention, wafer carries out in the process of set processing procedure in making board, the corresponding relation of resulting process parameter value is as shown in Fig. 2, wherein, process parameter 1 be the reative cell heater temperature (chamber temperature) (℃), process parameter 2 is gas (for example oxygen) flow (SCCM), process parameter 3 be suction pressure (pumping pressure) (torr), process parameter 4 be the wall heater temperature (wall heater temperature) (℃), process parameter 5 is gas (for example nitrogen) flow (SCCM).In this execution mode, the wafer process parameter value corresponding with it can 10x5 or the matrix α of 5x10 do computing.According to an embodiment of the invention, processing procedure total value Z can obtain according to the following equation computing:
Z＝(α-α)
TS
-1(α-α)
Wherein α is the relevant matrix of process parameter value, and α is with reference to the relevant matrix of process parameter value, S
-1Be the inverse correlation matrix.According to another implementation of the invention, processing procedure total value Z also can obtain according to the following equation computing:
Wherein σ is the standard difference that calculates based on reference process parameter value.
Need to prove that except aforesaid equation, processing procedure total value Z can also obtain according to other suitable equation computings.
Please refer to Fig. 1, then carry out step S104: resulting wafer measuring value and processing procedure total value are presented at a processing procedure control chart with a sign body K, as shown in Figure 3.Wherein, sign body K is presented at the position in the processing procedure control chart, decides corresponding to the size of its related parameter values of processing procedure control chart.
Please refer to Fig. 3, it is depicted as the processing procedure control chart in one embodiment of the present invention, the processing procedure control chart is one to have mutually perpendicular first (X) axle and second (Y) two-dimensional quadrature figure, first (X) axle is relevant with the processing procedure total value with the wafer measuring value respectively with second (Y) axle, and wafer measuring value and processing procedure total value indicate body K according to first (X) axle and second (Y) axle with one respectively and be shown in the processing procedure control chart.According to other execution modes of the present invention, wafer measuring value and processing procedure total value also can indicate body K with one and be shown in the processing procedure control chart respectively according to second (Y) axle and first (X) axle.
It should be noted that, has an elliptoid keyholed back plate limit C in the processing procedure control chart shown in Figure 3, it both can be by the resulting a plurality of wafer measuring values of a plurality of processing procedures of past and the statistical computation of processing procedure total value and had got, also can be by the resulting a plurality of preferableization wafer measuring values of a plurality of preferableization processing procedures of past and the statistical computation of processing procedure total value and get.According to an embodiment of the invention, keyholed back plate limit C can be for calculating the standard deviation of gained by statistics.According to other execution modes of the present invention, keyholed back plate limit C is not limited to ellipticity, also can have other suitable closed circular.The center position of ellipticity keyholed back plate limit C is a target location A, in execution mode shown in Figure 3, target location A is the desired value (optimum value) of wafer measuring value corresponding to the value of first (X) axle, is the desired value (optimum value) of processing procedure total value corresponding to the value of second (Y) axle.According to another implementation of the invention, target location A is the desired value (optimum value) of processing procedure total value corresponding to the value of first (X) axle, and is the desired value (optimum value) of wafer measuring value corresponding to the value of second (Y) axle.According to other execution modes of the present invention, target location A is not limited to the center position of keyholed back plate limit C, also can be positioned at keyholed back plate limit C with other suitable position.
Therefore, can be according to showing that the position that body K is arranged in the processing procedure control chart assesses the process quality of making board: it be approaching more far from target location A to show that body K is arranged in the position of processing procedure control chart, and the process quality that board is made in expression is good more; Otherwise it is far away more far from target location A to show that body K is arranged in the position of processing procedure control chart, and it is poor more that the process quality of board is made in expression.When show body K be positioned at keyholed back plate limit C with regional the time, set processing procedure can be considered as being in the processing procedure of " control state (under control) "; When showing that body K is positioned at regional beyond the keyholed back plate limit C, set processing procedure can be considered as being in the processing procedure of " non-control state (out of control) ".
According to an embodiment of the invention, when showing that body K is offset from target location A, control system can be according to wafer measuring value or processing procedure total value with suitable process parameter value feedback, with the process parameter of the set processing procedure of controlling next wafer.According to another implementation of the invention, when showing that body K is positioned at regional beyond the keyholed back plate limit C, system can carry out an alerts action, and the warning mode comprises making to be made board and produce alarm signal, pipe and/or stop procedure for producing.According to other execution modes of the present invention, when the majority in the processing procedure control chart shows that body K distributes with the trend of a direction or a position, normally owing to cause corresponding to a same or similar process parameter value variation institute that makes board.Therefore, a kind of processing procedure control chart of monitoring wafer measuring value and complex process parameter value simultaneously can be provided, both can avoid only relying on wafer measuring value assessment processing procedure stability but can't learn the problem of process variation in advance, also can avoid because the process parameter that the manufacturing board is involved in carrying out set processing procedure process is various, if by the stability of manpower observation process parameter value, not only consuming time and inefficient problem.
Show body K can Any shape and any color be shown in the processing procedure control chart: according to an embodiment of the invention, can be respectively be positioned at keyholed back plate limit C with inner region be positioned at the demonstration body K of keyholed back plate limit C and manifest with different kenels with exterior domain, as shown in Figure 3.Be understandable that, according to other execution modes of the present invention, be positioned at keyholed back plate limit C with inner region be positioned at keyholed back plate limit C and can different colors manifest with exterior domain; The wafer measuring value and the processing procedure total value that show body K representative can be presented at by the demonstration body K; Can have a prompting sign in the processing procedure control chart, it can show as the sign of green, orange, red or other colors makes the set processing procedure that board carries out at last with real-time demonstration, or the stability of nearest continuous process; Be positioned near the numbering that can demonstrate wafer the demonstration body K of keyholed back plate limit C with exterior domain; Or other kenel that can conveniently monitor.
Please refer to Fig. 4, it is depicted as the processing procedure control chart in another execution mode of the present invention, and its content identical with Fig. 3 does not repeat them here.According to an embodiment of the invention, processing procedure control chart shown in Figure 4 has the keyholed back plate limit C1 of 1 standard deviation (1 sigma) of calculating gained by statistics, the keyholed back plate limit C2 of 2 standard deviations (2 sigma) and the keyholed back plate limit C3 of 3 standard deviations (3 sigma), and keyholed back plate limit C1, C2 and C3 represent the variation boundary line of processing procedure in various degree respectively.Therefore, comparing result or relativeness by keyholed back plate limit C1, C2 and C3 and aforementioned demonstration body K, when showing that body K is positioned at regional beyond the keyholed back plate limit C3 of 3 standard deviations, set processing procedure can be considered as being in the processing procedure of " non-control state (out of control) "; When show keyholed back plate limit C3 that body K is positioned at 3 standard deviations with regional the time, set processing procedure can be considered as being in the processing procedure of " control state (under control) ".Wherein, the keyholed back plate limit C1 that is positioned at 1 standard deviation as the sign body K that is positioned at " control state " scope with regional the time, this set processing procedure can be considered as the good processing procedure of a quality; And when indicating regional between keyholed back plate limit C1 that body K is shown in 1 and 3 standard deviations and the C3, Fabrication parameter value that board is made in its expression morphs.Therefore, can carry out the improvement measure at the unusual part of processing procedure before at the processing procedure that processing procedure becomes at " non-control state (outof control) ", to improve quality management.
The present invention is wafer is carried out a set processing procedure in a manufacturing board after, with write down in this set processing procedure several process parameter values carry out the conversion Calculation step to convert a processing procedure total value to, and wafer is carried out measurement step to obtain the wafer measuring value, and wafer measuring value and processing procedure total value can be shown in the processing procedure control chart by a sign body.Wherein, the processing procedure control chart has an elliptoid keyholed back plate limit, and be positioned at the keyholed back plate limit with the zone have a target location, corresponding to the desired value of first (X) axle and second (Y) wafer measuring value and the desired value of processing procedure total value.Can be according to showing that body K is arranged in the distance of processing procedure control chart with respect to the target location, the process quality of board is made in assessment.Therefore, the invention provides and to monitor the processing procedure control chart that obtains wafer measuring value and complex process parameter value simultaneously, the problem that both can avoid only depending on wafer measuring value assessment processing procedure stability and can't learn process variation in advance, also can avoid because the process parameter that the manufacturing board is involved in carrying out set processing procedure process is various, if by the stability of manpower observation process parameter value, not only consuming time and inefficient problem.When fluctuation takes place, processing procedure is stable and do not influence under the requirement of production capacity controlling, the engineer can find out the main cause that causes fluctuation efficiently in the shortest time, judge the stability of processing procedure rapidly, to allow kinds of goods under safest environment, also seek inefficacy or the unusual processing procedure situation analyzed in advance or in real time by the board reaction, grasp equipment health status (Equipment Health Condition) with it, and then to reach with predictability maintenance (Predictive Maintenance) be the maintenance of equipment mechanism of benchmark.Therefore; can assist the engineering staff to reduce the predetermined equipment downtime number of times of inoperative; the board of the problem of detecting generation in good time; reduce the generation probability of defective products or waste product; and then online adjustment process recipe; not influenced because of the drift of board characteristic to guarantee product quality, lifting has great help for overall efficiency.
Though the present invention discloses as above by each embodiment, above-mentioned execution mode only is used for explaining and explanation the present invention, is not that the present invention is constituted any qualification.Those of ordinary skill in the art without departing from the spirit and scope of the present invention, still can carry out suitable retouching, change and modification to the present invention, and therefore, protection scope of the present invention should be as the criterion with defining of claim.
Claims (10)
1, a kind of system of monitoring program, it comprises:
One two-dimensional quadrature figure, it has second spool relevant with the processing procedure total value of set processing procedure of relevant with the wafer measuring value of wafer first and, and has the keyholed back plate limit of a closed circular among the two-dimensional quadrature figure; And
One indicates body, and it shows that processing procedure total value and wafer measuring value are in two-dimensional quadrature figure.
2, the system of monitoring program according to claim 1 is characterized in that: described processing procedure total value and wafer measuring value obtain by the method that comprises the following steps:
Wafer is provided, makes in the board one wafer is carried out set processing procedure, and measure and note down several process parameter values of making board when participating in the cintest simultaneously;
After wafer finishes set processing procedure, wafer is carried out a measurement step, to obtain the wafer measuring value; And
The process parameter value is converted to the processing procedure total value.
3, the system of monitoring program according to claim 2 is characterized in that: described wafer measuring value comprise granule number, electrically, flatness, etch-rate, thickness and doping.
4, the system of monitoring program according to claim 2 is characterized in that: described process parameter value comprises temperature, pressure, flow, leak rate, concentration and time.
5, the system of monitoring program according to claim 1 is characterized in that: the keyholed back plate limit of described closed circular is a keyholed back plate limit that is got by resulting a plurality of optimization wafer measuring values of a plurality of optimization processing procedures of past and processing procedure total value statistics.
6, a kind of method of monitoring program, it comprises the following steps:
One wafer is provided, makes in the board one wafer is carried out a set processing procedure, and measure and note down several process parameter values of making board when participating in the cintest simultaneously;
After wafer finishes set processing procedure, wafer is carried out a measurement step, to obtain a wafer measuring value;
The process parameter value is converted to a processing procedure total value;
One two-dimensional quadrature figure is provided, and it has one relevant with the wafer measuring value first and one relevant with the processing procedure total value second, and has the keyholed back plate limit of a closed circular among the two-dimensional quadrature figure; And
Processing procedure total value and wafer measuring value are shown among the two-dimensional quadrature figure with a sign body.
7, the method for monitoring program according to claim 6 is characterized in that: described wafer measuring value comprise granule number, electrically, flatness, etch-rate, thickness and doping.
8, the method for monitoring program according to claim 6 is characterized in that: described process parameter value comprises temperature, pressure, flow, leak rate, concentration and time.
9, the method for monitoring program according to claim 6 is characterized in that: the keyholed back plate limit of described closed circular is added up and is got by resulting a plurality of optimization wafer measuring values of a plurality of optimization processing procedures of past and processing procedure total value.
10, the method for monitoring program according to claim 6, it is characterized in that: the process quality of described manufacturing board is assessed in the position that is arranged in described two-dimensional quadrature figure according to described demonstration body, when described demonstration body be positioned at described keyholed back plate limit with regional the time, described set processing procedure can be considered as the processing procedure of a control state; When described demonstration body is positioned at regional beyond the described keyholed back plate limit, described set processing procedure can be considered as the processing procedure of a non-control state.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105302036A (en) * | 2014-06-27 | 2016-02-03 | 力晶科技股份有限公司 | Method and system for monitoring process state running according to multiple process schemes |
| CN105573269A (en) * | 2014-11-05 | 2016-05-11 | 中芯国际集成电路制造(上海)有限公司 | Parameter monitoring system for semiconductor manufacturing machine and method |
| CN106024664A (en) * | 2016-05-25 | 2016-10-12 | 上海华力微电子有限公司 | Metal layer film thickness stack model calibration method and system |
| CN110874086A (en) * | 2018-08-31 | 2020-03-10 | 长鑫存储技术有限公司 | Evaluation method and device based on semiconductor measurement parameters and terminal equipment |
| US12074073B2 (en) | 2018-12-13 | 2024-08-27 | Applied Materials, Inc. | Prescriptive analytics in highly collinear response space |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2608132B2 (en) * | 1989-03-27 | 1997-05-07 | 日本電信電話株式会社 | Crystal growth monitoring device |
| JP2606753B2 (en) * | 1989-09-01 | 1997-05-07 | 日本電信電話株式会社 | Method for measuring growth state of epitaxial growth layer and apparatus for measuring growth state of epitaxial growth layer used therefor |
| JPH06349925A (en) * | 1993-06-07 | 1994-12-22 | Mitsubishi Electric Corp | Epitaxial growth layer evaluation method and process evaluation test pattern structure |
| US7144297B2 (en) * | 2005-05-03 | 2006-12-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus to enable accurate wafer prediction |
| US7206721B1 (en) * | 2005-12-12 | 2007-04-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Methods and systems of offline measurement for process tool monitoring |
-
2008
- 2008-03-20 CN CN2008100866653A patent/CN101540270B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105302036A (en) * | 2014-06-27 | 2016-02-03 | 力晶科技股份有限公司 | Method and system for monitoring process state running according to multiple process schemes |
| CN105573269A (en) * | 2014-11-05 | 2016-05-11 | 中芯国际集成电路制造(上海)有限公司 | Parameter monitoring system for semiconductor manufacturing machine and method |
| CN105573269B (en) * | 2014-11-05 | 2018-06-01 | 中芯国际集成电路制造(上海)有限公司 | The parameter monitoring system and method for semiconductor manufacturing board |
| CN106024664A (en) * | 2016-05-25 | 2016-10-12 | 上海华力微电子有限公司 | Metal layer film thickness stack model calibration method and system |
| CN106024664B (en) * | 2016-05-25 | 2019-04-12 | 上海华力微电子有限公司 | A kind of metal layer film thickness stacks the method and system of model calibration |
| CN110874086A (en) * | 2018-08-31 | 2020-03-10 | 长鑫存储技术有限公司 | Evaluation method and device based on semiconductor measurement parameters and terminal equipment |
| CN110874086B (en) * | 2018-08-31 | 2021-11-23 | 长鑫存储技术有限公司 | Evaluation method and device based on semiconductor measurement parameters and terminal equipment |
| US12074073B2 (en) | 2018-12-13 | 2024-08-27 | Applied Materials, Inc. | Prescriptive analytics in highly collinear response space |
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Effective date of registration: 20170303 Address after: Idaho Patentee after: Micron Technology, Inc. Address before: China Taiwan Taoyuan County Inotera Park revival Road No. 667 three Patentee before: Inotera Memories, Inc. |