CN101533663A - Method for improving flash memory medium data access speed - Google Patents
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- CN101533663A CN101533663A CN200810007361A CN200810007361A CN101533663A CN 101533663 A CN101533663 A CN 101533663A CN 200810007361 A CN200810007361 A CN 200810007361A CN 200810007361 A CN200810007361 A CN 200810007361A CN 101533663 A CN101533663 A CN 101533663A
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Abstract
The invention provides a method for improving flash memory medium data access speed. The method comprises the following steps: configuration parameters are set according to the flash memory character of a flash memory medium; a physical block is bound according to the configuration parameters; and data manipulation is implemented to the bound physical block. The method for improving flash memory medium data access speed can unify a variety of multi-plate flash memory mediums produced by various manufacturers so as to form a unified general management module for configuration management; and according to the configuration, the page and bock are bound in a flexible and logical manner, so that the read-write speed is improved to the utmost, and the data processing capability of the master control of a storage device is improved.
Description
Technical field
The present invention relates to the semiconductor storage medium field, particularly a kind of method that improves flash memory medium data access speed.
Background technology
Along with the development of semiconductor memory technologies, comparatively universal with flash media as the memory storage such as the flash disk of data storage medium, and the prime cost of this type of memory storage is the flash media chip.And the producer that produces the flash media chip is more and more, the type of the flash media chip of each manufacturer production and employed technology also may exist than big-difference, the technology that is intended to improve flash media chip data read or write speed also is to bring in constant renewal in, and intersects read-write technology (inter leave), internal chiasma read-write technology, multistage read-write technology (two plane) etc. as the outside.
As previously mentioned, there is the technology of multiple raising reading and writing data speed in flash media itself, but the type of the flash media that different manufacturer produced and the reading and writing data technology that is adopted are inequality, there is incompatible or unsupported situation each other, as the reading and writing data technology of supporting Toshiba (Toshiba) flash media just do not support Samsung (Samsung), supports the reading and writing data technology of magnesium light (Micron) flash media just not support the modern times (Hyundai).Based on above reason, when flash media chip that comprises two or more different manufacturers productions in a certain memory storage or polylith flash media chip, can't improve the data access speed of this memory storage by the Data Access Technology of each self-supporting.
Summary of the invention
The invention provides a kind of method that improves flash memory medium data access speed, comprising: the step that configuration parameter is set according to the flash memory characteristic of flash media; Step according to configuration parameter binding physical block; To binding the step that physical block carries out data manipulation.
Preferably, above-mentioned flash memory characteristic includes but not limited to: the intragranular exponent number of number of die, support, rank binding page or leaf increment and/or crystal grain binding page or leaf increment in the outer plate number of support, the sheet of support.
Preferably, above-mentioned flash memory characteristic according to flash media step that configuration parameter is set comprises: the step of obtaining the flash memory characteristic of flash media; The step of configuration parameter is set according to the flash memory characteristic.
Preferably, the above-mentioned step of obtaining the flash memory characteristic of flash media comprises: read the flash media numbering; Judge the sheet number that flash media comprises, think that then flash media supports the outside read-write mode that intersects of multichannel, otherwise think that flash media do not support the outside read-write technology of intersecting of multichannel if comprise multi-disc; Judge in the physics sheet of flash media whether multiway intersection read-write technology is arranged, think that then flash media supports multichannel internal chiasma read-write mode, otherwise think that flash media do not support multichannel internal chiasma read-write technology if having; Whether the intragranular of judging flash media has a plurality of rank, and to think that then the flash media support has multistage if having; Otherwise think that flash media do not support multistage; Above-mentioned judged result as the flash memory characteristic, is repeated above-mentioned steps up to the flash memory characteristic of obtaining all flash medias; The flash memory characteristic of all flash medias is write flash memory characteristic records table.
Preferably, the above-mentioned step that configuration parameter is set according to the flash memory characteristic comprises: receive the order that writes configuration parameter; Execution writes the order of configuration parameter, and the flash memory characteristic is write the internal information record sheet; Write the information that is used for the control data access, flash media is formatd.
Preferably, above-mentioned flash media after binding is write data and comprises: read configuration parameter; Reception writes the order of data, carries out data writing operation; Judge whether to be last outside intersection read-write operation,, use the outside read-write technology of intersecting to carry out data writing operation if not then according to the binding contrast relationship; Judge whether to be last internal chiasma read-write operation, as otherwise according to the binding contrast relationship, use internal chiasma read-write technology to carry out data writing operation; Judge whether data writing operation carries out last rank,, then bind contrast relationship, use multistage read-write technology to carry out data writing operation as not.
The method of raising flash memory medium data access speed provided by the invention can be united the flash media of multi-disc, polytype, various manufacturers, forming unified general administration module is managed for configuration, carry out the page or leaf and the flexible logic binding of piece according to configuration, improve read or write speed to greatest extent. the data-handling capacity of raising memory storage master control.
Description of drawings
Fig. 1 is that embodiment of the invention memory device structure is formed and principle schematic;
Fig. 2 is the schematic flow sheet that the embodiment of the invention is obtained the flash memory characteristic;
Fig. 3 is the process flow diagram that the embodiment of the invention is provided with the flash memory characteristic;
Fig. 4 is the synoptic diagram that the embodiment of the invention forms the physical block in the polylith flash media binding piece;
Fig. 5 is the synoptic diagram that the embodiment of the invention forms the physical block in a plurality of crystal grain the binding piece;
Data organization form synoptic diagram in the piece after the binding of Fig. 6 embodiment of the invention;
Data writing operation process flow diagram behind Fig. 7 embodiment of the invention formation binding piece.
The realization of the object of the invention, functional characteristics and advantage will be in conjunction with the embodiments, are described further with reference to accompanying drawing.
Embodiment
As is known to the person skilled in the art, flash media is that flash chip is formed by one or more crystal grain (die) encapsulation, comprise one or more rank (plane) in each crystal grain, each rank comprises several storage blocks (Block), each storage block is made of a plurality of pages or leaves (Page), and every page comprises a plurality of sectors.The characteristic of flash media storage data is to be that unit writes data with the page or leaf, is the unit obliterated data with the piece; When writing data, write in proper order by the sector of page or leaf.In flash media, distribute the address to storage block in order, distributed the storage of address to be called physical block soon, and the imaginary address that in use has divided block is called logical address, sets up mapping relations by address mapping table between logical address and the physical address.
The embodiment that the present invention proposes comprises as shown in Figure 1 a memory storage, this memory storage 100 comprises the control module 10 of control data access, the configuration module 30 that is used for storage configuration parameter and memory module 40 at least, and control module 10 comprises flash media processing module 50, register series module 60 and runs on solidification software 20 in the control module 10.Flash media processing module 50 respectively with register series module 60, solidification software 20 and memory module 40, control is to the read-write operation and the storage administration of memory module 40.Solidification software 20 reads the configuration parameter in the configuration module 30, uses for flash media processing module 50.Wherein memory module 40 comprises that one or more is used to store the flash media of data, the same model chip that this one or more flash media can be same manufacturer production, the also dissimilar chips produced of different manufacturers.
Different flash medias has different flash memory characteristics, describes the flash memory characteristic by configuration parameter.Configuration parameter includes but not limited to number of die in the sheet of outer plate number, support of quantity, the support of sector in the quantity, each page of page or leaf in the numbering (ID), flash memory title model, flash memory manufacturer, each piece of flash media, support between intragranular exponent number, read command parameter, write order parameter, read states order, erase command, intercrystalline page or leaf increment and/or rank page or leaf increment etc.These configuration parameters are arranged in the memory storage when producing memory storage, by consulting the datasheet of each flash media, just can remove to set up flash memory characteristic records table according to the characterisitic parameter of every kind of flash media.Flash memory characteristic records table is as shown in table 1, can know according to the numbering of flash media wherein how many piece flash medias are memory module 40 comprise.For example number " 123423450000 " in the table 1, this numbering comprises " 1234 ", " 2345 " and " 0000 " three values, illustrate that this memory module 40 comprises two flash medias, i.e. first flash media 401 and second flash media 402, first flash media, 401 respective value " 1234 " wherein, its manufacturer is a Samsung, second flash media, 402 respective value " 2345 ", and its manufacturer is a Toshiba; Described memory module 40 is supported outside read-write technology and the two-way internal chiasma read-write technology of intersecting of two-way, and number of die is 4 in the sheet of its support, and the intragranular exponent number of support is 2, and its rank binding page or leaf increment is 100, and crystal grain binding page or leaf increment is 1000.
| The numbering of flash media | The outer plate number of supporting | Number of die in the sheet of supporting | The intragranular exponent number of supporting | Rank binding page or leaf increment | Crystal grain binding page or leaf increment |
| 1234234500 | 1 | 4 | 2 | 100 | 1000 |
| 1234123400 | 2 | 2 | 2 | 100 | 1000 |
Table 1
Fig. 2 illustrates present embodiment, and to obtain the flow process of flash memory characteristic as follows:
Step S101 chooses the flash media of a model, inquires about its function declaration book;
Which kind of flash step S102 by reading the characteristic that the flash media numbering obtains flash media, comprises, supports which kind of technology, is made up of several flash medias etc.;
Step S103 judges the sheet number that this flash media comprises, then carries out step S104 if comprise multi-disc, otherwise carries out step S105;
Step S104 thinks that this flash media support has the outside read-write mode that intersects of multichannel;
Step S105 thinks that this flash media only supports the 1 tunnel outside read-write technology of intersecting, and does not support the outside read-write technology of intersecting of multichannel;
Step S106 judges in each physics sheet of this flash media whether multiway intersection read-write technology is arranged, if having then carry out step S107, otherwise carries out step S108;
Step S107 thinks that this flash media supports multichannel internal chiasma read-write mode;
Step S108 thinks that this flash media only supports 1 tunnel internal chiasma read-write technology, does not support multichannel internal chiasma read-write technology;
Step S109 judges whether each intragranular of this flash media has a plurality of rank, if having then carry out step S110, otherwise carries out step S111;
Step S110 thinks that this flash media support has multistage;
Step S111 thinks that this flash media only supports 1 rank, does not support multistage;
Step S112, with above-mentioned judged result as one group of flash memory characteristic;
Step S113 writes flash memory characteristic records table with the flash memory characteristic;
Step S114 judges whether to also have new flash media, if having, returns step S101, otherwise carries out step S115;
Step S115 finishes flash memory characteristic records table.
Adopt above-mentioned flow process to obtain the flash memory characteristic of each flash media successively, and insert flash memory characteristic records table respectively, then finish obtaining of flash memory characteristic.
Present embodiment is set up flash memory characteristic records table record flash memory characteristic, and various flash media is bound into specific logical block and logical page (LPAGE).When producing memory storage, tool of production software is write flash memory characteristic records table in the piece specific in the flash media by the USB-SCSI order, the solidification software 20 of present embodiment reads flash memory characteristic records table, and flash media is done classification according to flash memory characterisitic parameter wherein, form the read-write operation of the unified various flash medias of common treatment parts.The common treatment parts receive the flash memory characteristic of various different flash medias, take different reading/writing methods to come that different flash memory mechanism is carried out logic and write page or leaf and logical erase block.The common treatment parts by reading the numbering of flash media, inquire corresponding record as index in flash memory characteristic records table when producing memory storage, then record is write the internal information record sheet by the usb order; Behind the power-up initializing of memory storage use, the common treatment parts carry out corresponding read-write operation by reading and recording information in the internal information record sheet.Above-mentioned internal information record sheet (IIR:Inner Information Record) is user-defined, and flash memory only provides storage space, puts what content, uses which space and does not use which space all to be specified by the user as for the inside.Present embodiment uses the internal information record sheet to write down self-defining information record, comprises the manufacturer's information of movable storage device, configuration information of flash memory module or the like.The internal information record sheet of present embodiment is kept in some specific of the flash media, can not be used to read and write data.
The process of configuration parameter is set in conjunction with Fig. 3 explanation:
Step S201, memory storage 100 powers on, and places the state of setting; Memory storage 100 receives the order that writes configuration parameter that the host computer system tool software sends;
Step S202, solidification software 20 judge whether to receive that USB-SCSI writes the configuration parameter order;
Step S203, to write as the flash memory characteristic in the table 1 in the internal information record sheet (IIR:Inner Information Record) by tool software, part as the IIR table is stored in the message block of flash media, promptly write down the message block of IIR table, this message block is to hide piece, is specifically designed to the specific information storage such as the IIR table;
Step S204 writes the information that other is used for the control data access by tool software, and the flash media in the flash memory module 40 is formatd.
Step S205 finishes the setting of flash memory characteristic.After described configuration parameter setting is finished, when the storage access data, read by solidification software 20.
Below in conjunction with concrete scheme above embodiment is further described.
Fig. 4 illustrates described memory module 40 and comprises that two flash medias are the binding of first flash media 401 and second flash media 402, described first flash media 401 is by crystal grain A and crystal grain B, second flash media 402 is encapsulated respectively by crystal grain A ' and crystal grain B ' and forms, comprise among the crystal grain A of described first flash media 401 and the crystal grain B that physical block 0 is to physical block 2047, comprise among the crystal grain A ' of described second flash media 402 and the crystal grain B ' that physical block 0 ' to physical block 2047 ', the first flash media 401 and second flash media 402 set up the basic table of comparisons by address mapping relation.
Now the physical block in first flash media 401 and second flash media 402 is carried out binding, binding is actually the process into physical block dispensed physical address, and its concrete binding procedure comprises:
Step S301, solidification software 20 read the flash memory characteristic in the configuration module 40, as the piece number of flash media, the number of die of every flash media etc.;
Step S302, get at least one physical block in each crystal grain from first flash media 401 and second flash media 402 respectively in proper order, as get physical block 0 and the physical block 1024 of crystal grain B, the physical block 0 ' of second flash media, 402 crystal grain A ' and 4 physical blocks such as physical block 1024 ' of crystal grain B ' of first flash media, 401 crystal grain A without binding;
Step S303 is bound into a physical block with a plurality of physical blocks of being got, and being about to above-mentioned 4 physical blocks binding becomes a binding piece 0, and the sector number of wherein binding in 0 page of the piece is 4 physical block sector number sums;
Step S304 judges whether to finish the binding of all physical blocks, if not, then returns step S302, until the binding of finishing all physical blocks; Physical block 1 ' and physical block 1025 ' binding becoming binding piece 1 as the physical block 1 of first flash media 401 and physical block 1025, second flash media 402, the rest may be inferred, ..., until the physical block 1023 ' and physical block 2047 ' binding the becoming binding piece 1023 of the physical block 1023 of first flash media 401 and physical block 2047, second flash media 402;
Step S305 is above-mentioned binding piece allocated physical address, sets up the binding contrast relationship;
Step S306 is written to the physical address of binding piece in the configuration module 30 as the part of configuration parameter.
In above-mentioned steps, if the number of die of this flash media is 1, the step of then carrying out physical block bindings in the rank comprises:
Step S401 gets at least one physical block without binding respectively, as gets the physical block 0 of rank A and the physical block 1024 of rank B from each rank of crystal grain such as rank A and rank B;
Step S402 is bound into a physical block with a plurality of physical blocks of being got, forms a binding piece; Be about to above-mentioned physical block 0 and physical block 1024 bindings becoming binding piece 0 ", wherein bind piece 0 " number of pages be above-mentioned 2 physical block number of pages sums, the sector number of its page also is 2 physical block sector number sums;
Step S403 judges whether to finish the binding of all physical blocks in each rank, if not, then returns step S501; Until the binding of finishing all physical blocks; As the physical block 1 of rank A and physical block 1025 bindings the becoming binding piece 1 of rank B ", the rest may be inferred ..., until the physical block 1023 of rank A and physical block 2047 bindings the becoming binding piece 1023 of rank B ";
Step S404 is above-mentioned binding piece allocated physical address, sets up the binding contrast relationship;
Step S405 is written to the physical address of binding piece in the configuration module 30 as the part of configuration parameter.
Above-mentioned binding contrast relationship is meant the corresponding relation of binding piece and logical address, can use the binding table of comparisons to write down this binding contrast relationship.Bind identically about the physical block of the mapping relations of binding piece and logical address and aforementioned intergranule, do not repeat them here.
Define relative binding page or leaf increment respectively for rank and crystal grain, page or leaf increment dtPlane of rank binding just and crystal grain binding page or leaf increment dtDie, can obtain this two values by the function declaration book that reads flash media, just can know how to bind in the sheet, read and write and intragranular 2 rank patterns and mainly contain in the sheet to intersect in 2 road sheets.
Below enumerate the signal of the physical block after the binding of 2 tunnel internal chiasma read-write technology, this crystal grain has 1024 pieces, and each piece has 128 pages or leaves:
Block0 block1024
0 page address: 0 1024*128
1 page address: 1 1024*128+1
2 page addresss: 2 1024*128+2
...... ......
The actual physics page address of the 7th page of the 5th sector of the 0th block after the above-mentioned binding is exactly: 7+1024*128=131079 (128 pages or leaves of each piece), sevtor address: 5%4=1 in the actual page; Can get thus, be actually according to page address be 131079 and sevtor address 1 remove to visit flash media.
Lift the physical block signal after a slice is bound again outward, this addresses of physical blocks is the same, and whether ready signal line is different but chip selection signal is with being used to judge flash media:
Block0 block0
0 page address: 00
1 page address: 11
2 page addresss: 22
...... ......
Sheet choosing: the 1st the 2nd
The actual physics page address of the 7th page of the 5th sector of the 0th block after the above-mentioned binding is exactly: 7, and sevtor address: 5%4=1 in the actual page; In fact visiting flash is the 7th page the 1st sector of the 2nd of visit.Because physically one page is 4 sectors, if greater than the 2nd of the visit of arriving of 4 sectors, so 0-3 at the 1st flash page or leaf, and 4-7 is in the 2nd flash page or leaf.
Above-mentioned step for binding piece allocated physical address also can be arranged on after the step S303, and promptly allocated physical address after whenever finishing a plurality of physical blocks of being got to be bound into a physical block is carried out the bindings to other physical block again.
Above-mentioned binding piece after binding is set up the binding piece physical address and the corresponding binding table of comparisons of logical address by address mapping relation, it is corresponding one by one with the logical address of mapping to binding piece 1023 to be above-mentioned binding piece 0, as binding piece 0 counterlogic piece 0, bind piece 1 counterlogic piece 1 ..., until binding piece 1023 counterlogic pieces 1023.The institutional framework of the binding table of comparisons can be identical with the table of comparisons that prior art is used, and contrasts the binding contrast relationship of a plurality of bound physical blocks but the contrast relationship that writes down in the binding table of comparisons is a logical address.
Present embodiment is in the data writing operation process, adopt the addressing of the binding table of comparisons to carry out write operation, promptly when needs write new data, logical address with the binding piece is a unit, in the binding piece, write data by the addressing of the binding table of comparisons, can further improve the speed that writes data in conjunction with technology such as outside intersection read-writes.
Fig. 5 shows described memory module 40 and comprises the i.e. binding of first flash media 401 of a flash media, described first flash media 401 is formed by crystal grain A and crystal grain B encapsulation, wherein crystal grain A comprises physical block 0 to physical block 1023, and crystal grain B comprises physical block 1024 to physical block 2047.First flash media 401 is set up the basic table of comparisons by address mapping relation, and above-mentioned physical block 0 is corresponding one by one with the logical address of mapping to physical block 2047.
Fig. 6 illustrates data organization form in the piece after the binding, and the page or leaf size remains unchanged in each binding piece, and sector number is multiplied in the page or leaf.
Above-mentioned first flash media 401 without its order that writes data of when binding is being: send write order (80h)+transmissions and write address (without page or leaf 0 address of binding logical block 0)+send and write finish (wait rb) to be written such as data (2048bytes)+transmission program command (11h)+wait.When therefore first flash media 401 is without binding can only be that unit writes data successively with the page or leaf to the physical block of crystal grain A or the physical block of crystal grain B, and have only when last secondary data has been write, could continue to write down the data of one page, so writing speed is relatively slow.
And through first flash media 401 after the binding when using multistage read-write technology to write data, it writes data command and is: send write order (80h)+transmissions and write address (the page or leaf 0 ' address of logical block 0 ')+send and write data (2048 bytes)+transmissions program command (11h)+wait intact (wait rb) to be written+send write order (81h)+transmissions and write finish (wait rb) to be written such as address (page 0 ' address of logical block 1 ')+transmission write data (2048bytes)+transmission program command (10h)+wait.Because logical block 0 ' physical address corresponding is binding piece 0 ', and binding piece 0 ' is made up of the physical block 0 of crystal grain A and the physical block 1024 of crystal grain B, binding piece 1 ' is made up of the physical block 1 of crystal grain A and the physical block 1025 of crystal grain B, therefore described first flash media 401 uses multistage read-write technology to write in the data procedures after binding, be to be that unit writes data simultaneously with the page or leaf to the physical block 1 of the physical block 1024 of the physical block 0 of first flash media, 401 crystal grain A and crystal grain B and crystal grain A and physical block 1025, the process that writes data is to carry out simultaneously in crystal grain A and crystal grain B, since send write order (80h) etc. time of intact (wait rb) to be written very short, substantially can ignore, therefore with write data without binding and compare, its programming time can be saved one times, promptly uses and once waits the time of intact (wait rb) to be written to finish the data of writing 2 pages or leaves.
The data that Fig. 7 shows the flash media of use after binding write flow process, comprise step:
Step S601, behind the power-up initializing, solidification software 20 reads the configuration parameter that configuration module 30 sets in advance, as the correlation parameter of binding piece;
Step S602 receives the order that the host computer system data write, and carries out data writing operation in memory module 40, comprises the logical address that writes data in this data writing operation;
Step S603 judges whether to be last outside intersection read-write operation, as denying execution in step S604; Otherwise, finish this data write operation;
Step S604 according to the corresponding relation of binding piece and logical address in the binding table of comparisons, uses the outside read-write technology of intersecting to carry out data writing operation;
Step S606 judges whether to be last internal chiasma read-write operation, as denying execution in step S607; Otherwise, return step S603;
Step S607 according to the corresponding relation of binding piece and logical address in the binding table of comparisons, uses internal chiasma read-write technology to carry out data writing operation;
Step S608 judges whether data writing operation carries out last rank, as denying execution in step S609; Otherwise, return step S606;
Step S609, the corresponding relation according to binding piece and logical address in the binding table of comparisons uses multistage read-write technology to carry out data writing operation.
The above only is the preferred embodiments of the present invention; be not so limit claim of the present invention; every equivalent structure or equivalent flow process conversion that utilizes instructions of the present invention and accompanying drawing content to be done; or directly or indirectly be used in other relevant technical fields, all in like manner be included in the scope of patent protection of the present invention.
Claims (13)
1. method that improves flash memory medium data access speed comprises:
The step of configuration parameter is set according to the flash memory characteristic of flash media;
Step according to configuration parameter binding physical block;
To binding the step that physical block carries out data manipulation.
2. the method for raising flash memory medium data access speed as claimed in claim 1, it is characterized in that described flash memory characteristic includes but not limited to: the intragranular exponent number of number of die, support, rank binding page or leaf increment and/or crystal grain binding page or leaf increment in the outer plate number of support, the sheet of support.
3. the method for raising flash memory medium data access speed as claimed in claim 1 is characterized in that,
The step that described flash memory characteristic according to flash media is provided with configuration parameter comprises:
Obtain the step of the flash memory characteristic of flash media;
The step of configuration parameter is set according to described flash memory characteristic.
4. the method for raising flash memory medium data access speed as claimed in claim 3 is characterized in that,
The described step of obtaining the flash memory characteristic of flash media comprises:
Read the flash media numbering;
Judge the sheet number that described flash media comprises, think that then described flash media supports the outside read-write technology of intersecting of multichannel, otherwise think that described flash media do not support the outside read-write technology of intersecting of multichannel if comprise multi-disc;
Judge in the physics sheet of described flash media whether multiway intersection read-write technology is arranged, think that then flash media supports multichannel internal chiasma read-write mode, otherwise think that flash media do not support multichannel internal chiasma read-write technology if having;
Whether the intragranular of judging described flash media has a plurality of rank, thinks that then described flash media support has multistage if having; Otherwise think that described flash media do not support multistage;
Above-mentioned judged result as the flash memory characteristic, is repeated above-mentioned steps up to the flash memory characteristic of obtaining all flash medias;
The flash memory characteristic of all flash medias is write flash memory characteristic records table.
5. the method for raising flash memory medium data access speed as claimed in claim 3 is characterized in that,
The described step that configuration parameter is set according to described flash memory characteristic comprises:
Reception writes the order of configuration parameter;
Execution writes the order of configuration parameter, and the flash memory characteristic is write the internal information record sheet;
Write the information that is used for the control data access, flash media is formatd.
6. as the method for any described raising flash memory medium data access speed of claim 1 to 5, it is characterized in that:
Rank binding page or leaf increment and crystal grain binding page or leaf increment according to described flash media are realized in the binding sheet.
7. as the method for any described raising flash memory medium data access speed of claim 1 to 5, it is characterized in that described step according to configuration parameter binding physical block comprises:
Read the flash memory characteristic of flash media;
Get at least one physical block in the crystal grain from first flash media and second flash media respectively in proper order without binding;
Described a plurality of physical blocks are bound into a physical block;
Repeat above-mentioned steps until the binding of finishing all physical blocks;
Be described binding piece allocated physical address, set up the binding contrast relationship;
To bind the physical address of piece as configuration parameter.
8. the method for raising flash memory medium data access speed as claimed in claim 7 is characterized in that:
Rank binding page or leaf increment and crystal grain binding page or leaf increment according to described flash media are realized in the binding sheet.
9. the method for raising flash memory medium data access speed as claimed in claim 7, it is characterized in that, after whenever finishing a plurality of physical blocks of being got and being bound into a physical block, allocated physical address is also set up the binding contrast relationship, carries out the bindings to other physical block again.
10. as the method for any described raising flash memory medium data access speed of claim 1 to 5, it is characterized in that if the number of die of described flash media is 1, then described step according to configuration parameter binding physical block comprises:
Read the flash memory characteristic of flash media;
From each sheet of crystal grain, get at least one physical block respectively without binding;
A plurality of physical blocks of being got are bound into a physical block, form a binding piece;
Repeat above-mentioned steps until the binding of finishing all physical blocks;
Be described binding piece allocated physical address, set up the binding contrast relationship;
To bind the physical address of piece as configuration parameter.
11. the method for raising flash memory medium data access speed as claimed in claim 10 is characterized in that:
Rank binding page or leaf increment according to described flash media is realized in the binding sheet.
12. the method for raising flash memory medium data access speed as claimed in claim 10, it is characterized in that, after whenever finishing a plurality of physical blocks of being got and being bound into a physical block, allocated physical address is also set up the binding contrast relationship, carries out the bindings to other physical block again.
13. the method as any described raising flash memory medium data access speed of claim 1 to 5 is characterized in that, described flash media after binding is write data, comprising:
Read described configuration parameter;
Reception writes the order of data, carries out data writing operation;
Judge whether to be last outside intersection read-write operation,, use the outside read-write technology of intersecting to carry out data writing operation if not then according to described binding contrast relationship;
Judge whether to be last internal chiasma read-write operation, as otherwise according to as described in the binding contrast relationship, use internal chiasma read-write technology to carry out data writing operation;
Judge whether data writing operation carries out last rank, as not, then described binding contrast relationship uses multistage read-write technology to carry out data writing operation.
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| CN200810007361.3A CN101533663B (en) | 2008-03-11 | 2008-03-11 | Method for improving flash memory medium data access speed |
| PCT/CN2009/070736 WO2009111981A1 (en) | 2008-03-11 | 2009-03-11 | Method for improving data access speed of flash media and apparatus employing this method |
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| CN200810007361.3A CN101533663B (en) | 2008-03-11 | 2008-03-11 | Method for improving flash memory medium data access speed |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN108733580A (en) * | 2014-09-05 | 2018-11-02 | 慧荣科技股份有限公司 | Method for scheduling read commands |
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| CN115687171B (en) * | 2022-10-26 | 2023-06-06 | 深圳三地一芯电子股份有限公司 | Flash memory block binding method, device, equipment and storage medium |
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| CN113111013A (en) * | 2021-04-19 | 2021-07-13 | 深圳芯邦科技股份有限公司 | Flash memory data block binding method, device and medium |
| CN113111013B (en) * | 2021-04-19 | 2023-09-01 | 深圳芯邦科技股份有限公司 | Flash memory data block binding method, device and medium |
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| WO2009111981A1 (en) | 2009-09-17 |
| CN101533663B (en) | 2014-07-16 |
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