CN101530913B - Stirred reacting and grinding processing method for production of high purity alpha-aluminum oxide, silicon carbide micron, nanometer grade powder material - Google Patents
Stirred reacting and grinding processing method for production of high purity alpha-aluminum oxide, silicon carbide micron, nanometer grade powder material Download PDFInfo
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- CN101530913B CN101530913B CN2009100646446A CN200910064644A CN101530913B CN 101530913 B CN101530913 B CN 101530913B CN 2009100646446 A CN2009100646446 A CN 2009100646446A CN 200910064644 A CN200910064644 A CN 200910064644A CN 101530913 B CN101530913 B CN 101530913B
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- stirring reaction
- alundum
- water
- carborundum
- aluminum oxide
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 39
- 239000000843 powder Substances 0.000 title claims abstract description 24
- 238000000227 grinding Methods 0.000 title claims abstract description 23
- 239000000463 material Substances 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000003672 processing method Methods 0.000 title claims abstract description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract 6
- 238000003756 stirring Methods 0.000 claims abstract description 53
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910001868 water Inorganic materials 0.000 claims abstract description 29
- 238000000926 separation method Methods 0.000 claims abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims description 52
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 41
- 239000011734 sodium Substances 0.000 claims description 13
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical group [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 13
- 239000004094 surface-active agent Substances 0.000 claims description 13
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 12
- 239000004115 Sodium Silicate Substances 0.000 claims description 12
- 229910052708 sodium Inorganic materials 0.000 claims description 12
- 235000019795 sodium metasilicate Nutrition 0.000 claims description 12
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 12
- 238000013019 agitation Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 3
- 239000000376 reactant Substances 0.000 claims description 2
- 230000036632 reaction speed Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 8
- 230000003213 activating effect Effects 0.000 abstract description 7
- 239000003795 chemical substances by application Substances 0.000 abstract description 7
- 238000012545 processing Methods 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- XJKVPKYVPCWHFO-UHFFFAOYSA-N silicon;hydrate Chemical compound O.[Si] XJKVPKYVPCWHFO-UHFFFAOYSA-N 0.000 abstract 1
- 230000003139 buffering effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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- Carbon And Carbon Compounds (AREA)
- Manufacture And Refinement Of Metals (AREA)
Abstract
Description
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009100646446A CN101530913B (en) | 2009-04-14 | 2009-04-14 | Stirred reacting and grinding processing method for production of high purity alpha-aluminum oxide, silicon carbide micron, nanometer grade powder material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009100646446A CN101530913B (en) | 2009-04-14 | 2009-04-14 | Stirred reacting and grinding processing method for production of high purity alpha-aluminum oxide, silicon carbide micron, nanometer grade powder material |
Publications (2)
Publication Number | Publication Date |
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CN101530913A CN101530913A (en) | 2009-09-16 |
CN101530913B true CN101530913B (en) | 2010-07-21 |
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CN2009100646446A Active CN101530913B (en) | 2009-04-14 | 2009-04-14 | Stirred reacting and grinding processing method for production of high purity alpha-aluminum oxide, silicon carbide micron, nanometer grade powder material |
Country Status (1)
Country | Link |
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CN (1) | CN101530913B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101734695B (en) * | 2009-12-02 | 2012-08-08 | 蔡育成 | Production method of micron-level and nanometer-level serial products of alpha-aluminum oxide and alpha-silicon carbide |
CN106118138B (en) * | 2016-06-27 | 2017-12-29 | 大连海事大学 | A kind of composite and preparation method of polarity macromolecular coating nano carbon SiClx |
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2009
- 2009-04-14 CN CN2009100646446A patent/CN101530913B/en active Active
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Publication number | Publication date |
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CN101530913A (en) | 2009-09-16 |
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C06 | Publication | ||
PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20091113 Address after: Pharmaceutical street, hi tech Development Zone, Henan, Zhengzhou Province, China: 450065 Applicant after: Cai Yucheng Address before: Pharmaceutical street, hi tech Development Zone, Henan, Zhengzhou Province, China: 450065 Applicant before: Cai Yu Cheng Co-applicant before: Zhengzhou Shuguang piezoelectric Technology Co., Ltd. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Zhengzhou Shuguang piezoelectric Technology Co., Ltd. Assignor: Cai Yucheng Contract record no.: 2011410000025 Denomination of invention: Stirred reacting and grinding processing method for production of high purity alpha-aluminum oxide, silicon carbide micron, nanometer grade powder material Granted publication date: 20100721 License type: Exclusive License Open date: 20090916 Record date: 20110401 |
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ASS | Succession or assignment of patent right |
Owner name: ZHENGZHOU SHUGUANG PIEZOELECTRIC TECHNOLOGY CO., L Free format text: FORMER OWNER: CAI YUCHENG Effective date: 20140618 |
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TR01 | Transfer of patent right |
Effective date of registration: 20140618 Address after: 450065 pharmaceutical street, hi tech Development Zone, Zhengzhou, Henan Patentee after: Zhengzhou Shuguang piezoelectric Technology Co., Ltd. Address before: 450065 pharmaceutical street, hi tech Development Zone, Zhengzhou, Henan Patentee before: Cai Yucheng |
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TR01 | Transfer of patent right |
Effective date of registration: 20220125 Address after: 450001 300m west of the intersection of Kaixuan Road, Pharmaceutical Factory Street, high tech Industrial Development Zone, Zhengzhou, Henan Province Patentee after: Zhengzhou Shuguang Precision Material Co.,Ltd. Address before: 450065 pharmaceutical street, hi tech Development Zone, Zhengzhou, Henan Patentee before: Zhengzhou Shuguang Piezoelectric Technology Co.,Ltd. |
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TR01 | Transfer of patent right |