CN101527174A - Schottky type nuclear battery and preparation method thereof - Google Patents
Schottky type nuclear battery and preparation method thereof Download PDFInfo
- Publication number
- CN101527174A CN101527174A CN200910030429A CN200910030429A CN101527174A CN 101527174 A CN101527174 A CN 101527174A CN 200910030429 A CN200910030429 A CN 200910030429A CN 200910030429 A CN200910030429 A CN 200910030429A CN 101527174 A CN101527174 A CN 101527174A
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- CN
- China
- Prior art keywords
- schottky
- type
- nuclear battery
- doped layer
- gan
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- 238000002360 preparation method Methods 0.000 title abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract description 8
- 238000000407 epitaxy Methods 0.000 claims abstract description 6
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims abstract description 5
- 229910002601 GaN Inorganic materials 0.000 claims description 42
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 34
- 238000009413 insulation Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 10
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- 229910001020 Au alloy Inorganic materials 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 2
- CIOAGBVUUVVLOB-NJFSPNSNSA-N Strontium-90 Chemical compound [90Sr] CIOAGBVUUVVLOB-NJFSPNSNSA-N 0.000 claims description 2
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 2
- 238000003754 machining Methods 0.000 claims description 2
- PXHVJJICTQNCMI-RNFDNDRNSA-N nickel-63 Chemical group [63Ni] PXHVJJICTQNCMI-RNFDNDRNSA-N 0.000 claims description 2
- VQMWBBYLQSCNPO-NJFSPNSNSA-N promethium-147 Chemical compound [147Pm] VQMWBBYLQSCNPO-NJFSPNSNSA-N 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- 239000002699 waste material Substances 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 3
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 abstract 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 12
- 230000000694 effects Effects 0.000 description 12
- 230000005855 radiation Effects 0.000 description 9
- 229910021529 ammonia Inorganic materials 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 238000010792 warming Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000005676 thermoelectric effect Effects 0.000 description 2
- 101100460147 Sarcophaga bullata NEMS gene Proteins 0.000 description 1
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000000155 isotopic effect Effects 0.000 description 1
- 244000005700 microbiome Species 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052722 tritium Inorganic materials 0.000 description 1
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Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009100304294A CN101527174B (en) | 2009-04-10 | 2009-04-10 | Schottky type nuclear battery and preparation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009100304294A CN101527174B (en) | 2009-04-10 | 2009-04-10 | Schottky type nuclear battery and preparation method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101527174A true CN101527174A (en) | 2009-09-09 |
CN101527174B CN101527174B (en) | 2012-01-25 |
Family
ID=41094999
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2009100304294A Expired - Fee Related CN101527174B (en) | 2009-04-10 | 2009-04-10 | Schottky type nuclear battery and preparation method thereof |
Country Status (1)
Country | Link |
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CN (1) | CN101527174B (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101923906A (en) * | 2010-07-06 | 2010-12-22 | 西安电子科技大学 | Silicon carbide-based grid-shaped Schottky contact type nuclear battery |
CN103035310A (en) * | 2012-12-27 | 2013-04-10 | 长安大学 | Silicon carbide (SIC) transverse Schottky junction type mini-sized nuclear battery and manufacturing method thereof |
CN111659416A (en) * | 2020-05-21 | 2020-09-15 | 中国原子能科学研究院 | Platinum-based catalyst containing strontium or strontium compound |
CN114203329A (en) * | 2021-12-13 | 2022-03-18 | 中国核动力研究设计院 | GaN-based Schottky diode, beta nuclear battery and preparation method thereof |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5859484A (en) * | 1995-11-30 | 1999-01-12 | Ontario Hydro | Radioisotope-powered semiconductor battery |
US6479919B1 (en) * | 2001-04-09 | 2002-11-12 | Terrence L. Aselage | Beta cell device using icosahedral boride compounds |
JP4221697B2 (en) * | 2002-06-17 | 2009-02-12 | 日本電気株式会社 | Semiconductor device |
CN101320601B (en) * | 2008-06-18 | 2011-08-17 | 西北工业大学 | Silicon carbide Schottky junction type nuclear cell and preparation thereof |
CN101325093B (en) * | 2008-07-23 | 2011-08-24 | 西安电子科技大学 | Minisize nuclear battery manufacture method |
-
2009
- 2009-04-10 CN CN2009100304294A patent/CN101527174B/en not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101923906A (en) * | 2010-07-06 | 2010-12-22 | 西安电子科技大学 | Silicon carbide-based grid-shaped Schottky contact type nuclear battery |
CN103035310A (en) * | 2012-12-27 | 2013-04-10 | 长安大学 | Silicon carbide (SIC) transverse Schottky junction type mini-sized nuclear battery and manufacturing method thereof |
CN111659416A (en) * | 2020-05-21 | 2020-09-15 | 中国原子能科学研究院 | Platinum-based catalyst containing strontium or strontium compound |
CN114203329A (en) * | 2021-12-13 | 2022-03-18 | 中国核动力研究设计院 | GaN-based Schottky diode, beta nuclear battery and preparation method thereof |
Also Published As
Publication number | Publication date |
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CN101527174B (en) | 2012-01-25 |
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Owner name: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS(SIN Free format text: FORMER OWNER: SUZHOU NANO TECHNIQUE + NANO BIONIC RESEARCH INST. Effective date: 20100907 |
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Free format text: CORRECT: ADDRESS; FROM: 215125 NO.398, RUOSHUI ROAD, GAOJIAO DISTRICT, DUSHUHU, INDUSTRIAL PARK, SUZHOU CITY, JIANGSU PROVINCE TO: 215123 NO.398, RUOSHUI ROAD, INDUSTRIAL PARK, SUZHOU CITY, JIANGSU PROVINCE |
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Effective date of registration: 20100907 Address after: 215123 Suzhou Industrial Park, Jiangsu, if waterway No. 398 Applicant after: Suzhou Institute of Nano-Tech and Bionics (SINANO), Chinese Academy of Sciences Address before: 215125 Jiangsu city of Suzhou province Dushu Lake Industrial Park No. 398 waterway if higher education Applicant before: Suzhou Nano Technique & Nano Bionic Research Inst. |
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