CN101523570A - Method for manufacturing electronic device using plasma reactor processing system - Google Patents
Method for manufacturing electronic device using plasma reactor processing system Download PDFInfo
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- CN101523570A CN101523570A CNA2007800381285A CN200780038128A CN101523570A CN 101523570 A CN101523570 A CN 101523570A CN A2007800381285 A CNA2007800381285 A CN A2007800381285A CN 200780038128 A CN200780038128 A CN 200780038128A CN 101523570 A CN101523570 A CN 101523570A
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Abstract
To enable change of a concentration of atmosphere in a process chamber and realize a plasma reaction process required for manufacturing a liquid crystal device and a semiconductor device with a high yTo enable change of a concentration of atmosphere in a process chamber and realize a plasma reaction process required for manufacturing a liquid crystal device and a semiconductor device with a high yield at a low cost.A new flow rate setting value given to a pressure control type flow rate adjusting device of each constituent gas is a value obtained by calculating back from the process gas concenield at a low cost.A new flow rate setting value given to a pressure control type flow rate adjusting device of each constituent gas is a value obtained by calculating back from the process gas concentration after an estimated change under the condition that the total flow rate value is identical before and after the concentration change.A pressure controller of an exhaust pipe is switched from a tration after an estimated change under the condition that the total flow rate value is identical before and after the concentration change.A pressure controller of an exhaust pipe is switched from a pressure setting mode to a valve open setting mode only for a predetermined small time from the modification start and receives a valve open setting value obtained experimentally so as to mitigate thepressure setting mode to a valve open setting mode only for a predetermined small time from the modification start and receives a valve open setting value obtained experimentally so as to mitigate thepressure fluctuation immediately after the change. pressure fluctuation immediately after the change.
Description
Technical field
This invention relate to electronic installations such as being fit to liquid crystal apparatus or semiconductor equipment manufacturing utilization the manufacture method of electronic installation of plasma (plasma) reactor processing system.
Background technology
This plasma reactor processing system has: the processing case (process chamber) of built-in plasma generator (for example, parallel plate-type electrode mode, microwave antenna mode etc.); With the inert gas source more than a kind or 2 kinds (for example, Ar, Kr, Xe etc.) respectively with the supply line of the inert gas that is connected of processing case; With processing gas source (for example, the H more than a kind or 2 kinds
2, O
2, NF
3, Cl
2, SiCl
4, HBr, SF
6, C
5F
8, CF
4Deng) respectively with the supply line of the processing gas that is connected of processing case; And the discharge line that connects the interior gas of case of processing case and exhaust pump.
In each of the supply line of each inert gas and each processing gas, the flow regulator that the flow that flows through the gas of its pipeline can be adjusted into the value that sets is arranged, and in the discharge line of gas pressure controller is arranged in case, this pressure controller has the function that direction that the deviation of the pressure measuring value that the aperture of flow control valve is measured towards the pressure set points that is provided with via pressure measurement cell reduces automatically changes.
But, in this plasma reactor processing system, need be in the way of when beginning processing, processing, the concentration change of processing gas medium in the case (atmosphere) during the end of processing.For example when the beginning of processing, the concentration that need carry out from the single gas medium of inert gas (diluent gas) to the mist medium of inert gas and the processing gas more than a kind or 2 kinds changes.In addition, in the way of processing, need to carry out the concentration change of the different mist medium of mist medium from the mist medium of a certain concentration of inert gas and processing gas to other concentration or gaseous species sometimes.And then when the end of processing, need carry out concentration change from the mist medium of inert gas and processing gas to the single gas medium of inert gas.
Generally, the change of this concentration is by providing new flow setting value to realize to the flow regulator in the supply line of each composition gas respectively.In the past,, adopted the adjuster that after just beginning the gas supply, often produces the Temperature Distribution formula of excess flow, therefore needed the problem of time till the pressure stability of existence in the processing case as the flow regulator that is used for such purpose.
Such problem is solved (with reference to patent documentation 1) by adopting pressure control type flow regulator as flow regulator.Promptly, pressure control type flow regulator has the aperture of flow control valve towards flow setting value that is provided and the function that automatically changes corresponding to the direction that the deviation of the flow detection value of the fluid pressure of being measured by pressure measurement cell reduces, can obtain the such flow of flow setting value after just beginning the gas supply.
On the other hand, even adopt pressure control type flow regulator as flow regulator, when the flow regulator to each composition gas provides new flow setting value and changes flow, even if in the processing case, in the discharge line of gas pressure controller is arranged, also exist in the processing case to produce the problem of bigger pressure oscillation.
Such problem solves by the following method, promptly by aperture changeable type control valve for fluids or exhaust velocity changeable type exhaust pump in the discharge line of gas in the processing case, the flow that causes with pressure control type flow regulator changes in linkage instantaneous change (increase) air displacement (with reference to patent documentation 2).
Patent documentation 1:(Japan) spy opens the 2000-200780 communique
Patent documentation 2:(Japan) spy opens the 2002-203795 communique
Summary of the invention
The problem that invention will solve
But, the utilization that patent documentation 2 is put down in writing in the manufacture method of electronic installation of plasma reactor processing system, it is different because but flowable or venting quality are pressed each gaseous species, therefore even there is the instantaneous in linkage change air displacement of flow change that causes with pressure control type flow regulator, the problem of the interior pressure oscillation of the processing case that caused of the flow change that causes of absorption pressure control type flow regulator fully.
The present invention is conceived to the problems referred to above point and finishes, its purpose is to provide the manufacture method of the electronic installation that has utilized plasma reactor processing system, this manufacture method can be in the way of when beginning processing, processing, the concentration of gas medium in the instantaneous change processing case during end of processing, thereby can be with high production rate and the low-cost required plasma reaction processing of production that realize liquid crystal apparatus or semiconductor equipment.
For other purposes of the present invention and action effect, those skilled in the art should be readily appreciated that by the following record of reference specification.
Be used to solve the scheme of problem
The manufacture method of inventing the electronic installation that above-mentioned problem to be solved can be by having utilized the plasma reactor processing system that is made of following such structure solves.
That is, the plasma reactor processing system of having used the manufacture method of this electronic installation has: processing case (plasma reaction furnace main body), built-in plasma generator; The supply line of inert gas is connected the inert gas source more than a kind or 2 kinds respectively with the processing case; The supply line of processing gas is connected the processing gas source more than a kind or 2 kinds respectively with the processing case; And the discharge line of the interior gas of case, connect processing case and exhaust pump.
The present invention is in such plasma reactor processing system, has the 1st step, provide new flow setting value to described pressure control type flow regulator between the supply line of each composition gas, concentration with the processing gas in the change processing case, and in described the 1st step, each of the new flow setting value that each flow regulator is provided is, so that back total flow value is identical as condition before changing in concentration, the value of obtaining by inverse operation according to the processing gas concentration of being supposed after changing.
And, pressure controller with the 1st pattern is arranged in the discharge line of gas in case, described the 1st pattern is meant, the direction that the deviation of the pressure measuring value that the aperture of flow control valve is measured towards the pressure set points that is provided with via pressure measurement cell reduces automatically changes.
According to such structure, when the concentration change of processing gas, to the new flow setting value that flow regulator provided be between the supply line of each composition gas, so that total flow value in back is identical as condition before changing in concentration, the value of obtaining by inverse operation according to the processing gas concentration of being supposed after changing, therefore even if carried out the flow change by flow regulator between the supply line of each composition gas, flow change amount is cancelled mutually, thereby can not produce pressure oscillation in the processing case, that also is very little value even if perhaps produce pressure oscillation.Therefore, if the pressure oscillation of this degree, the pressure controller generation effect of the discharge line by gas in case, the change of case internal pressure will be stablized immediately.
In preferred embodiment, in described the 1st step, each of the new flow setting value that each flow regulator is provided is set to, begin to only limit to the 1st pettiness time from change in regulation, reduce the part that exceeds the quata of direction about the composition gas addition that reduces after changing, increase the part that exceeds the quata of direction about the composition gas addition that increases after changing, and the part total amount that exceeds the quata that exceeds the quata the part total amount and increase direction that reduces direction equates.At this moment, preferred the 1st pettiness time is below 2 seconds.
According to such structure, begin to only limit to pettiness time from change in regulation, even if the flow value based on each flow regulator increases because of the increase desired value that exceeds as purpose, perhaps exceed as the minimizing desired value of purpose and reduce, thereby under the bigger situation of Capacity Ratio of processing case, the concentration of gas medium also can promptly arrive aimed concn from concentration change beginning in the processing case, and after stablize.And, just at last flow exceed during equate owing to be set to the part total amount that exceeds the quata that exceeds the quata the part total amount and increase direction that reduces direction, so these exceed the quata to be cancelled out each other between the total amount, can not work to pressure oscillation.
In the present invention further optimization execution mode, pressure controller in described case in the discharge line of gas also has the 2nd pattern, described the 2nd pattern is meant, the aperture of flow control valve is automatically changed towards the direction that the deviation of aperture set point that is provided and aperture currency reduces, and described manufacture method also has: the 2nd step, begin to only limit to the 2nd pettiness time from change in regulation, to switch to described the 2nd pattern from described the 1st pattern between the pressure controller in the described discharge line, and the valve opening set point of being obtained by experience of the pressure oscillation that should relax just after changing will be provided.
According to such structure, the new flow setting value that flow regulator provided of just getting it right between the supply line of each composition gas is, so that total flow value in back is identical as condition before changing in concentration, the value of obtaining by inverse operation according to the processing gas concentration of being supposed after changing, when because of each gaseous species when but the difference on flowable or the venting quality produces pressure oscillation in the processing case, because pressure controller in discharge line is switched to the 2nd pattern from the 1st pattern from the pettiness time that change begins to only limit in regulation, be provided the valve opening set point of obtaining by experience of the pressure oscillation that should relax just after changing simultaneously, therefore the pressure oscillation that causes for such gaseous species is relaxed at once by instantaneous the following of valve opening.
In the time of can being applied in the processing beginning as the concentration change of the processing gas of the feature of producing device of the present invention, in the processing way or be self-evident in any one of the concentration change of the processing gas during process finishing.
So in the present invention, the article on plasma reaction treatment contributes owing to can be directed to the processing gas plasma immediately in the reacting furnace, so the utilization ratio of processing gas improves correspondingly manufacturing cost decline.And, owing to can also significantly reduce the stand-by period of reaction treatment before beginning, the therefore shortening of the TAT (Turn-Around Time) by engineering and productivity ratio also improves.
In addition, since can be when plasma reaction be finished dealing with stop supplies processing gas immediately, and after this promptly the article on plasma generator plasma generation halt instruction is provided, therefore can prevent the use that is wasted of processing gas that not article on plasma reaction contributes, the raising of the utilization ratio by processing gas can realize the decline of manufacturing cost.
In addition, because the stand-by period can also reduce reaction treatment significantly and finish the time, the therefore shortening of the TAT (Turn-Around Time) by engineering and productivity ratio also improves.
In addition, except the processing gas that is provided the article on plasma reaction treatment contributes immediately, electric power can not wasted consumption when plasma reaction is handled beginning, thus except the saving of the raising of productivity ratio and processing gas, by the saving of electric energy, cost degradation can be pursued ultimate attainment.
And, in outage and when the plasma reaction processing finished, the supply of processing gas also was stopped, therefore processing gas can not wasted consumption, except the saving of the raising of productivity ratio and processing gas,, cost degradation can be pursued ultimate attainment thus by the saving of electric energy.
The invention effect
According to the present invention, when the concentration change of processing gas, to the new flow setting value that flow regulator provided be between the supply line of each composition gas, so that total flow value in back is identical as condition before changing in concentration, the value of obtaining by inverse operation according to the processing gas concentration of being supposed after changing, therefore even if carried out the flow change by flow regulator between the supply line of each composition gas, flow change amount is cancelled mutually, thereby can not produce pressure oscillation in the processing case, that also is very little value even if perhaps produce pressure oscillation.Therefore, if the pressure oscillation of this degree, the pressure controller generation effect of the discharge line by gas in case, the change of case internal pressure will be stablized immediately.
Description of drawings
Fig. 1 is the overall structure figure of plasma reactor processing system.
Fig. 2 is the summary construction diagram of FCS and APC.
Fig. 3 is the figure of the configuration example of expression plasma generator.
The key diagram (one) of the concentration change control when Fig. 4 is the processing beginning.
The key diagram (its two) of the concentration change control when Fig. 5 is the processing beginning.
The figure that gas concentration when Fig. 6 is expression use the inventive method changes.
The figure that gas concentration when Fig. 7 is expression use previous methods changes.
Fig. 8 is the figure that respectively 3 kinds of gaseous species is represented to process the relation of gas flow in the case and pressure.
Fig. 9 is valve (valve) aperture among the expression APC and processes the figure of the relation (gas flow 100sccm) of case internal pressure.
Figure 10 is the valve opening among the expression APC and processes the figure of the relation (gas flow 500sccm) of case internal pressure.
Figure 11 is the timing diagram of relation of the pattern of expression supply of processing gas and APC.
Figure 12 is the flow chart of an example that the manufacture method of electronic installation of the present invention has been used in expression.
Figure 13 is the flow chart that is used to illustrate effect of the present invention.
Label declaration
1 processing case
The 1a plasma generator
2 the 1st import port
3 the 2nd import port
4 APC (pressure regulator)
5 exhaust pumps
6 microwave power supplys
7 RF power supplys (13.56MHz)
8 RF power supplys (2MHz)
9 Programmable Logic Controllers (PLC)
The interface of 9a～9e PLC
10 programmable terminals (programmable terminal:PT)
11 communications
The MV hand-operated valve
FCS flow control system (pressure control type flow regulator)
SV electromagnetically operated valve (stop valve)
41 control units
42 control valves
43 pressure measurement cells
51 control units
52 control valves
53 pressure measurement cells
54 restrictions (orifice)
100 plasma reactor processing systems
Embodiment
Below, explain the preferred implementation of the manufacture method of the electronic installation that has utilized plasma reactor processing system of the present invention with reference to accompanying drawing.
Fig. 1 represents the overall structure figure of plasma reaction furnace system.As shown in the figure, this plasma reactor processing system 100 has: the processing case 1 of built-in plasma generator 1a; With the inert gas source more than a kind or 2 kinds (being Ar, Kr, Xe in this example) respectively with the supply line of the inert gas that is connected of processing case 1; With the processing gas source more than a kind or 2 kinds (is H in this example
2, O
2, NF
3, Cl
2, SiCl
4, HBr, SF
6, C
5F
8, CF
4) respectively with the supply line of the processing gas that is connected of processing case 1; And the discharge line that connects the interior gas of case of processing case 1 and exhaust pump (Pump) 5.
In each of the supply line of the supply line of inert gas and processing gas, have the flow control system that the flow regulator as the pressure control type works (below, be called FCS), pressure control type flow regulator has following function, and the aperture that is about to flow control valve automatically changes towards the flow setting value that is provided with corresponding to the direction that the deviation of the flow detection value of the fluid pressure of being measured by pressure measurement cell reduces.
Be described more specifically, the supply line of Ar gas is branched to, towards to the importing of epimere shower face (shower plate) with the 1st supply line of port 2 with towards to the importing of hypomere shower face the 2nd supply line with port 3.And hand-operated valve MV11, FCS11 are arranged in the 1st supply line, as the electromagnetically operated valve SV11 that stop valve works, hand-operated valve MV9, FCS9, electromagnetically operated valve SV9 are arranged in the 2nd supply line.Therefore, by the flow setting value of operation FCS11 and/or FCS9, can control the flow of Ar gas.
Feed lines for Kr gas and Xe gas also is same.Therefore, by the flow setting value of operation FCS10 and/or FCS8, can control the flow of Kr gas or Xe gas.
H
2The supply line of gas gas direct and to hypomere shower face imports and is connected with port 3.Hand-operated valve MV7, FCS7, electromagnetically operated valve SV7 are arranged in this pipeline.Therefore, by the flow setting value of operation FCS7, can control H
2The flow of gas.
For HBr gas, SF
6Gas, C
5F
8The supply line of gas also is same.Therefore, by the flow setting value of operation FCS2 or FCS3, can control HBr gas, SF
6Gas, C
5F
8The flow of gas.
O
2The supply line of gas after via hand-operated valve MV6, FCS6, electromagnetically operated valve SV6, branch into towards to the importing of epimere shower face with the 1st supply line of port 2 with towards to the importing of hypomere shower face the 2nd supply line with port 3.And, hand-operated valve MV62 is arranged in the 1st supply line, hand-operated valve MV61 is arranged in the 2nd supply line.Therefore, by the flow setting value of operation FCS6, can control the flow of O2 gas.
For NF
3Gas, Cl
2Gas, SiCl
4The supply line of gas also is same.Therefore, by the flow setting value of operation FCS5 or FCS4, can control NF
3Gas, Cl
2Gas, SiCl
4The flow of gas.
The summary construction diagram of the FCS that Fig. 2 (a) expression is worked as pressure control type flow regulator.As shown in the drawing, FCS has control unit 51, control valve 52, pressure measurement cell 53 and restriction 54.Omitted diagram in the control unit 51, but (opened 2003-203789 with reference to the spy, Fig. 3) comprising amplifying circuit, flow computing circuit, comparison circuit and valve-driving circuit.After the measuring-signal of pressure measurement cell 53 is exaggerated, in the flow computing circuit, be transformed to the corresponding flow detection signal in amplifying circuit.This flow detecting signal compares with flow setting signal in comparison circuit, tries to achieve their deviation signal.Valve-driving circuit is towards the aperture of the direction control control valve 52 of the value minimizing of this deviation signal.
This FCS utilizes if the pressure P at upper reaches 1 is dirty more than 2 times of pressure P 2, then fluid enter velocity of sound zone and with the equipment of the proportional principle of pressure of upstream side, control flow by the pressure P 1 of adjusting the upper reaches, therefore also can the such gas flow of instantaneous supply target behind firm supply gas.As FCS with such function, selling various products by a plurality of manufacturers, as an example, can enumerate pattern FCS-4WS-798-F3L, pattern FCS-4WS-798-F500 that Off ジ キ Application Co., Ltd. makes, pattern FCS-4WS-798-F1600 etc.
On the other hand, automatic pressure controller (Auto Pressure Controller) (hereinafter referred to as the APC) 4 that works as pressure controller arranged in the discharge line of gas in case, and pressure controller has the function that direction that the deviation of the pressure measuring value that the aperture of flow control valve is measured towards the pressure set points that is provided with via pressure measurement cell reduces automatically changes.
The summary construction diagram of Fig. 2 (b) expression APC4.As shown in the drawing, APC is built-in with control unit 41 and control valve 42.Control unit 41 has the 1st pattern (pressure setting pattern) and the 2nd pattern (aperture setting pattern), the 1st pattern is meant, the pattern that the direction that the deviation of the pressure measuring value that the aperture of control valve 42 is measured towards the pressure set points that is provided with via the pressure measurement cell 43 that is installed in the processing case reduces automatically changes, the 2nd pattern are meant the pattern that direction that the aperture of control valve 42 is reduced towards the deviation of aperture set point that is provided and aperture currency automatically changes.As APC with such function, selling various products by a plurality of manufacturers, as an example, can enumerate pattern controller PM-3, controller valve (valve) F61-87665-18 etc. that VAT SKK VACUUMLTD company makes.
Fig. 3 represents the configuration example of plasma generator.As plasma generator 1a, can enumerate the equipment of parallel plate-type electrode mode and the equipment of microwave antenna mode.
Shown in Fig. 3 (a), the plasma generator of parallel plate-type electrode mode comprises: parallel plate-type electrode (being made of excitation of plasma electrode 112 and electrode 113); Be used for it is provided the RF power supply 7,8 (with reference to Fig. 1) of High frequency power; The shower face 115 of processing with gas etc. is provided; The case 111 that holds these.And, by utilizing parallel plate electrode the processing that is provided being applied high frequency waves with gas, processing is excited with gas and becomes plasmoid.On the other hand, shown in Fig. 3 (b), the plasma generator of microwave antenna mode replaces utilizing High frequency power, and 116 pairs of casees of microwave antenna, the 111 interior radiated microwaves from being driven by microwave-driven circuit 117, thereby excite processing gas.In any one plasma generator, can both control isoionic generation or stop by plasma power supply (RF power supply 7,8 or microwave power supply 6 etc.) by conducting.
Get back to Fig. 1, the FCS1 that is comprised in plasma reactor processing system～11, electromagnetically operated valve SV1～SV11, APC4, microwave power supply 6, being controlled at of RF power supply 7,8 are to use Programmable Logic Controller (hereinafter referred to as PLC) 9 to carry out in this example.PLC9 is connected with the programmable terminal that works as operation (hereinafter referred to as PT) 10 via communication 11.
That is, between PLC9 and the FCS1～FCS11, connect via the PLC interface 9a that comprises the DA/AD unit.Between PLC9 and the electromagnetically operated valve SV1～SV11, connect via the PLC interface 9b that comprises the DO unit.Between PLC9 and the microwave power supply 6, connect via the PLC interface 9c that comprises DA/AD unit or DO/DI unit.Between PLC9 and the APC4, connect via the PLC interface 9d that comprises RS232.And, between PLC9 and the RF power supply 7,8, connect via the PLC interface 9e that comprises DA/AD unit or DO/DI unit.And PLC9 carries out the processing shown in the flow chart of Figure 11 described later via user program, thereby realizes manufacture method of the present invention.
Then, concentration change control as the pith of the manufacture method of the electronic installation that has utilized plasma reactor processing system of the present invention is described.The inventive method is characterised in that, when the concentration change of processing gas, as the new flow setting value that the FCS in the supply line of each composition gas (pressure control type flow regulator) is provided, with identical as condition, adopt the value of obtaining by inverse operation according to the processing gas concentration of being supposed after changing in the front and back of concentration change total flow value.
Fig. 4 represents the key diagram of concentration change control of the present invention.Supposition now, concentration processing gas concentration before changing (for example is made as A1,0%), the processing gas supply (for example is made as F11,0sccm), the inert gas supply (for example is made as F21,420sccm), concentration processing gas concentration after changing (for example is made as A2,24%), the processing gas supply (for example is made as F13,100sccm), the inert gas supply is made as F23 (for example, 320sccm) time, in concentration change control of the present invention, (F13 F23), is worth identical (F11+F21=F13+F23=K) as condition with the front and back total flow in the concentration change as the new flow setting value that the FCS in the supply line of each composition gas (pressure control type flow regulator) is provided, the value that employing is obtained by inverse operation according to the processing gas concentration of being supposed (A2) after changing (F13=A2 * K, F23=(1-A2) * K).
If the flow setting value (F13 that will try to achieve like this, F23) offer each FCS, then in the front and back of concentration change, total flow can not increase on principle in the case, pressure when concentration changes in the processing case can significantly not change (increase), and the case internal pressure is estimated can be instantaneous stable.
; if adopt such method without exception; then concentration before changing the flow amplitude of fluctuation of each gas in the back can be restricted; therefore based on gaseous species be difficult for flow or the situation capacious of processing case etc.; reach as spended time till the processing gas concentration of purpose; as a result, begin to produce delay in processing.
Therefore, in this example, the new flow setting value of each composition gas is set to, begin to only limit to pettiness time (Δ t) from change in regulation, reduce the part (Δ F) that exceeds the quata of direction about the composition gas addition that reduces after changing, increase the part (+Δ F) that exceeds the quata of direction about the composition gas addition that increases after changing, and the part total amount that exceeds the quata that exceeds the quata the part total amount and increase direction that reduces direction equates.
In addition, if satisfy the condition that the part total amount that exceeds the quata of exceed the quata part total amount and the increase direction that reduce direction equates, the part that then exceeds the quata also can be realized by a plurality of pulses.As an example of a plurality of pulses, the key diagram when Fig. 5 represents to exceed the quata partly to be two pulses.In the figure, the new flow setting value of each cost gas is set to, at first, begin to only limit in the small time (Δ t1) of regulation from change, reduce the part (Δ F1) that exceeds the quata of direction about the composition gas addition that reduces after changing, increase the part (+Δ F1) that exceeds the quata of direction about the composition gas addition that increases after changing, and the part total amount that exceeds the quata that exceeds the quata the part total amount and increase direction that reduces direction equates.And then, after small time (Δ t2) of regulation in also be set to, reduce the part (Δ F2) that exceeds the quata of direction about the composition gas addition that reduces after changing, increase the part (+Δ F2) that exceeds the quata of direction about the composition gas addition that increases after changing, and the part total amount that exceeds the quata that exceeds the quata the part total amount and increase direction that reduces direction equates.
According to such part phase add mode that exceeds the quata, begin to only limit to small time (Δ t) from concentration change in regulation, though total flow is kept necessarily, produce big flow change about all gases kind, therefore can shorten the time that reaches as till the processing gas concentration of purpose.In addition, the aperture of the APC in Fig. 5 (e) small time of expression.In addition, the pettiness time (Δ t) as regulation,, be fit to below 2 seconds though also depend on the kind of gas.
Below, Benq is in the control result of concentration change control of the present invention (with reference to Fig. 4) and the control result who controls based on concentration change in the past so that concrete plasma reactor processing system is example.Use the plasma generator (with reference to Fig. 3 (b)) of microwave mode, (etching) carries out etching to the poly-Si film by the excitation of plasma etching.Tankage is 53 liters, and gas flow adds up to 420cc/min in the case, and gaseous species is made as HBr with the processing gas kind, and excitation of plasma gas is made as Ar as inert gas.The HBr of stable state, the concentration ratio of Ar are target with 24%, 76% respectively.In addition, will process case internal object pressure and be made as 30mTorr, it is 2.45GHz that plasma takes place with microwave, and self-bias voltage high frequency is 13.56MHz, and substrate temperature is 20 ℃, and the processed reaction time is 30 seconds.
Gas concentration when Fig. 6 represents to use concentration change control of the present invention (with reference to Fig. 4) changes, and the gas concentration that Fig. 7 represents to use concentration in the past to change when controlling changes.
Under the situation of having used concentration change control in the past, as shown in Figure 7, after plasma power supply (ON) in moment t21 connection, when the moment, t22 began to supply processing gas, after till the moment t23 of concentration stabilize of processing gas, spend about 7 seconds time.Therefore, in the past in the example, after the processing gas supply begins, thereby, need be used for the stand-by period (about 7 seconds) of gas concentration and pressure stability at this with till the reaction of RF power connection beginning processed.And, be not used in the processed reaction at the processing gas that waiting time provided, and discharge and waste from the processing case.
Under the situation of having used concentration change control of the present invention, as shown in Figure 6, after plasma power supply (ON) in moment t11 connection, when the moment, t12 began to supply processing gas, after till the moment t13 of concentration stabilize of processing gas, only spend about about 1 second time.Thereby judge, after the processing gas supply begins, thereby with till the reaction of RF power connection beginning processed, just enough as the stand-by period that is used for a gas concentration and pressure stability offer 1 second.This stabilization time is so long as the degree of irregularity of etching that the transition state of processing gas concentration causes or film forming converges to short like that the getting final product of degree of permissible range according to the purpose of processing.The connection of RF power supply and the supply of processing gas begin almost can be made as simultaneously (for example, the variation from processing gas concentration begin till stable during connect RF etc.).
Like this, in previous methods with respect to 30 seconds processed reaction time, the stand-by period of processed reaction beginning be 7 seconds from but height ratio, but in the methods of the invention the stand-by period be that thereby engineering time shortens tremendously below 1 second, simultaneously because therefore the processing gas that does not need to provide in the stand-by period can realize effective utilization of processing gas.
In addition, in above-mentioned example, constitute, the gas that carries out from the argon gas body (Ar) of inert gas to the mist (Ar/HBr:76 is than 24) of inert gas and processing gas switches, thus the processing of beginning poly-Si etching, but should understand this only example of the present invention.
That is, concentration change control of the present invention also can be applicable to the situation of carrying out the switching from processing gas (A) to processing gas (B) under the state of having connected plasma power supply.Switch if carry out such plasma processing gas in taking place, then can be on substrate as process object the diverse multiple film of stacked formation.By applying self bias voltage, can also carry out etching in addition to diverse multiple film.
So, as shown in Figure 8, in case, there are a plurality of gaseous species (Ar, HBr, O
2) time, its flow of gas separately equates but the difference of case internal pressure as can be seen.This be because depend on gaseous species gas flowable difference or to the flowable difference of the exhaust of pump.Even if gas flow is identical in the gaseous species difference of case internal pressure as can be seen simultaneously not, even if therefore similarly total flow is identical but can not present the difference of case internal pressure simultaneously at gas ratio in mist.Therefore, when gaseous species, gas ratio variation, pressure is made as under certain situation,, also needs the pressure control of APC4 even total flow is certain.
Promptly, the new flow setting value that just getting it right is provided between the FCS (pressure control type flow regulator) of the supply line of each composition gas is, so that total flow value in back is identical as condition before changing in concentration, the value of obtaining by inverse operation according to the processing gas concentration of being supposed after changing, but, still can produce pressure oscillation in the processing case because of the difference of each gaseous species on flowable or venting quality.
At this moment, because APC (with reference to Fig. 1) in discharge line is switched to the 2nd pattern (valve opening setting pattern) from the 1st pattern (pressure setting pattern) from the pettiness time that change begins to only limit in regulation, be provided the valve opening set point of obtaining by experience of the pressure oscillation that should relax just after changing simultaneously, therefore the pressure oscillation that causes for such gaseous species is relaxed at once by instantaneous the following of valve opening.In addition, switching to the 2nd pattern from the 1st pattern here is because the 2nd pattern (valve opening setting pattern) can reach the valve opening as purpose at short notice than the 1st pattern (pressure setting pattern).
Here, as Fig. 9 and shown in Figure 10, APC4 between the aperture and case internal pressure of built-in control valve, as parameter, can find out certain relation with gas flow in the case.Therefore, according to this relation, and by repeated experiments, try to achieve and relax the concentration required valve opening set point of pressure oscillation after before changing just, and switching to from the 1st pattern on the basis of the 2nd pattern, the valve opening set point of trying to achieve is like this offered APC4.
More particularly, as shown in figure 11, begin to supply processing gas (concentration change) at moment t31, and the pattern of APC4 switched to the 2nd pattern (valve opening setting pattern) from the 1st pattern (pressure setting pattern), the valve opening set point of being obtained by experience that should relax just pressure oscillation after changing simultaneously offers APC4.
Like this, the pressure oscillation the during change of concentration that the difference of gaseous species etc. causes needn't be waited for stable slowly based on the 1st pattern (pressure setting pattern), and instantaneous and forcibly be formulated by the 2nd pattern (valve opening setting pattern).
And, if and use control based on the 2nd pattern (valve opening setting pattern), then be made as about the new flow setting value that will be provided to the FCS (pressure control type flow regulator) of each composition gas, so that total flow value in back is identical as condition before changing in concentration, the control of the value of obtaining by inverse operation according to the processing gas concentration of being supposed after changing, do not need to consider the difference of gaseous species, correspondingly can avoid the complexity of controlling.In addition, as switch to the 2nd pattern (constantly t31) since the 1st pattern, turn back to the time till the 1st pattern (moment t32), promptly the 1st pattern switches to the pettiness time of the 2nd pattern, though also rely on the kind of gas, be fit to below 3 seconds.In addition, this switching can be carried out simultaneously with the change of gas stream value, also can regularly carry out at other.
Figure 12 has represented to use the flow chart of an example of manufacture method of the present invention (comprising the control of Fig. 4 and Figure 11).In this example, adopted Ar as inert gas, adopted HBr as processing gas.In addition, also can in PLC9, realize by a series of processing shown in this flow chart.
At first, in step 1201, carry out Ar flow value setting for the FCS of Ar gas.In next step 1202, the unlatching of Ar gas trap (between the electromagnetically operated valve of the secondary side of the FCS of Ar gas) and set (pressure in the 1st pattern is set) for the pressure of APC and carry out simultaneously.Thus, being imported into Ar gas and its pressure in the case is stabilized under the effect of the 1st pattern (pressure setting pattern) of APC and is authorized pressure.
In next step 1203, carry out setting for the microwave power value of microwave power supply 6.In next step 1204, microwave power supply is connected (access of microwave power supply).
In next step 1205, the APC of aperture set the flow value change (F22 that comprises the part Δ F that exceeds the quata of Fig. 4) of (F12 that comprises the part Δ F that exceeds the quata of Fig. 4), Ar gas and to(for) the HBr flow value of the FCS of HBr gas is set (aperture in the 2nd pattern is set) and is carried out simultaneously.In next step 1206, carry out the unlatching of HBr gas trap (between the electromagnetically operated valve of the secondary side of the FCS of HBr gas).
In next step 1207, HBr flow value change (F13 of Fig. 4) and Ar flow value change (F23 of Fig. 4) are carried out simultaneously.In addition, the aperture of carrying out APC is as required set.This step 1207 is carried out repeatedly as required and as shown in Figure 5.In next step 1208, carry out APC pressure and set (pressure in the 1st pattern is set).In next step 1209, carry out setting (for the setting of the RF power supply of lower electrode) for the RF performance number of RF power supply 7,8.In next step 1210, carry out the RF power connection.Thus, the processing beginning is ready to complete.Then, each processing content constantly carries out the change of RF performance number matchingly with this, thereby implements semiconductor fabrication process or liquid crystal manufacturing processing etc.
If process finishing, then in next step 1211, cut off the RF power supply, in step 1212, carry out that the HBr gas trap cuts out and the change of Ar flow value, in next step 1213, cut off microwave power supply.In next step 1214, carry out that the Ar gas trap cuts out and the APC aperture is all opened.
Then,, just switch employed processing gas (gas that in Figure 12, is equivalent to HBr) accordingly with processing as long as a series of manufacturing engineering is continuing (step 1215 is a "No"), and the processing of repeated execution of steps 1201～step 1214.If a series of manufacturing engineering finishes (step 1215 is a "Yes"), then processing finishes.Therefore according to the embodiment of the present invention, when processing gas switches, carry out different processed continuously and do not stop reaction halfway, realize that the time of engineering integral body shortens.
As mentioned above, comprise the manufacture method that concentration of the present invention change handles and for example can use PLC9, wait and realize by suitably controlling FCS1～FCS11, electromagnetically operated valve SV1～SV11, APC4, microwave power supply 6, RF power supply 7,8.
At last, thus Figure 13 represents to compare the flow chart that is used to illustrate effect of the present invention with example in the past.
Shown in Figure 13 (a), in manufacture method in the past, beginning to have supplied processing gas (switching from the inert gas to the processing gas) back (step 1310), concentration and pressure stability etc. the processing gas in the case to be processed are desired value (step 1311), thereby connect plasma power supply beginning processed reaction (step 1312) then.And, when the processed reaction finishes, thereby cut off plasma power supply and finish processed reaction (step 1313), stop supplies processing gas (switching from the processing gas to the inert gas) (step 1314) then, before the concentration of the gas in the processing case and pressure stability are desired value, be not used for the processing (for example, open the door of processing case and take out substrate etc.) of next engineering and wait for (step 1315).At this moment, the stable time of the concentration of the gas in the wait case and pressure becomes the time of the waste of not carrying out any processing.
With respect to this, in the present invention shown in Figure 13 (b), can almost carry out the processing gas supply simultaneously and begin (step 1320) and plasma power supply connection (step 1321), similarly also can almost carry out plasma power supply cut-out (step 1322) and processing gas supply simultaneously and stop (step 1323).With different in the past, this is feasible to be because gas concentration can reach desired value and stablizes instantaneous in processing case 1, begins just can carry out the cause of processed from the moment of having supplied gas.Here, processing gas is the mist of material gas (becoming the gas of the materials such as film that generated by processing) and inert gas sometimes, is material gas sometimes.
In addition, in the present invention shown in Figure 13 (c), in the processing case, connected plasma power supply after (step 1330), begin to supply processing gas (switching from the inert gas to the processing gas) (step 1331).And stop supplies processing gas when process finishing (switching from the processing gas to the inert gas) back (step 1332) cuts off plasma power supply (step 1333).With different in the past, this is feasible to be because gas concentration can reach desired value and stablizes instantaneous in processing case 1, begins just can carry out the cause of processed from the moment of having supplied gas.
At this moment, can almost carry out the processing gas supply simultaneously and begin (switching from the inert gas to the processing gas) and plasma power supply connection, the supply that similarly also can almost carry out processing gas simultaneously stops (switching from the processing gas to the inert gas) and plasma power supply cut-out.Here, processing gas is the mist of material gas (becoming the gas of the materials such as film that generated by processing) and inert gas sometimes, is material gas sometimes.
Industrial utilizability
According to the present invention, owing to can will be directed to the interior immediately plasma of processing gas of reacting furnace The article on plasma reaction treatment contributes, so the raising of the utilization ratio of processing gas, correspondingly manufactures This decline. And, begin the front stand-by period owing to can also significantly reduce reaction treatment, therefore pass through The shortening of the TAT of engineering (Turn-Around Time) and productivity ratio also improves.
In addition since can be when plasma reaction be finished dealing with stop supplies processing gas immediately, And after this promptly plasma generator plasma generation halt instruction is provided, therefore can prevent not The processing gas that article on plasma reaction the contributes use that is wasted, the utilization ratio by processing gas Raising can realize the decline of manufacturing cost.
In addition, owing to the stand-by period that can also reduce significantly after reaction treatment finishes, therefore pass through the worker The shortening of the TAT of journey (Turn-Around Time) and productivity ratio also improves.
In addition, except the processing gas that is provided the article on plasma reaction treatment contributes immediately, Electric power can not wasted consumption when plasma reaction was processed beginning, thus except raising and the processing gas of productivity ratio Outside the saving of body, by the saving of electric energy, cost degradation can be pursued ultimate attainment.
And, in outage and when the plasma reaction processing finished, the supply of processing gas also was stopped, Therefore processing gas can not wasted consumption, thus except the saving of the raising of productivity ratio and processing gas, By the saving of electric energy, cost degradation can be pursued ultimate attainment.
Used the manufacture method of electronic installation of plasma reactor processing system of the present invention at semiconductor (liquid crystal indicator or organic EL show dress for device, solar cell, large-scale type flat panel display apparatus Put etc.), in the manufacturing of other electronic installation, the plasma reaction that can be applied to substrate is processed (plasma Oxidation processes, plasma nitridation process, plasma CVD processing, plasma etch processes, plasma ash Changing (ashing) processes etc.) or the plasma of chamber interior wall etc. remove and process. That is, method of the present invention is suitable Be used for the general manufacturing of electronic installation.
Claims (6)
1, a kind of manufacture method of having utilized the electronic installation of plasma reactor processing system,
Described plasma reactor processing system comprises:
The processing case, built-in plasma generator;
The supply line of inert gas is connected the inert gas source more than a kind or 2 kinds respectively with the processing case;
The supply line of processing gas is connected the processing gas source more than a kind or 2 kinds respectively with the processing case; And
The discharge line of gas in the case connects processing case and exhaust pump,
In each of the supply line of the supply line of inert gas and processing gas, pressure control type flow regulator is arranged, this pressure control type flow regulator has following function, the aperture that is about to flow control valve automatically changes towards the flow setting value that is provided with corresponding to the direction that the deviation of the flow detection value of the fluid pressure of being measured by pressure measurement cell reduces, and
Pressure controller with the 1st pattern is arranged in the discharge line of gas in case, and described the 1st pattern is meant, the aperture of flow control valve is automatically changed towards the direction that the deviation of pressure set points that is provided and pressure measuring value reduces,
Described manufacture method is characterised in that to have
The 1st step provides new flow setting value respectively to the described pressure control type flow regulator between the supply line of each composition gas, with the concentration of the processing gas in the change processing case, and,
In described the 1st step, each of the new flow setting value that each flow regulator is provided is, so that total flow value in back is identical as condition before changing in concentration, and the value of obtaining by inverse operation according to the processing gas concentration of being supposed after changing.
2, the manufacture method of having utilized the electronic installation of plasma reactor processing system as claimed in claim 1 is characterized in that,
In described the 1st step, each of the new flow setting value that each flow regulator is provided is set to, begin to only limit to the 1st pettiness time from change in regulation, reduce the part that exceeds the quata of direction about the composition gas addition that reduces after changing, increase the part that exceeds the quata of direction about the composition gas addition that increases after changing, and the part total amount that exceeds the quata that exceeds the quata the part total amount and increase direction that reduces direction equates.
3, the manufacture method of having utilized the electronic installation of plasma reactor processing system as claimed in claim 2 is characterized in that,
Described the 1st pettiness time is below 2 seconds.
4, the manufacture method of having utilized the electronic installation of plasma reactor processing system as claimed in claim 1 or 2 is characterized in that,
Pressure controller in described case in the discharge line of gas also has the 2nd pattern, and described the 2nd pattern is meant, the aperture of flow control valve is automatically changed towards the direction that the deviation of aperture set point and aperture currency reduces, and,
Described manufacture method also has:
The 2nd step, begin to only limit to the 2nd pettiness time from change in regulation, to switch to described the 2nd pattern from described the 1st pattern between the pressure controller in the described discharge line, and the valve opening set point of being obtained by experience of the pressure oscillation that should relax just after changing will be provided.
5, the manufacture method of having utilized the electronic installation of plasma reactor processing system as claimed in claim 4 is characterized in that,
Described the 2nd pettiness time is below 3 seconds.
6, as each described manufacture method of having utilized the electronic installation of plasma reactor processing system of claim 1 to 5, it is characterized in that,
When the change of the concentration of processing gas comprises the processing beginning, in the processing way or the concentration change of the processing gas during process finishing.
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| JP2006280263 | 2006-10-13 | ||
| JP280275/2006 | 2006-10-13 | ||
| JP280263/2006 | 2006-10-13 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105225913A (en) * | 2014-06-30 | 2016-01-06 | 东京毅力科创株式会社 | Plasma processing apparatus and method of plasma processing |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105225913A (en) * | 2014-06-30 | 2016-01-06 | 东京毅力科创株式会社 | Plasma processing apparatus and method of plasma processing |
| CN105225913B (en) * | 2014-06-30 | 2018-10-16 | 东京毅力科创株式会社 | Plasma processing apparatus and method of plasma processing |
| US10204763B2 (en) | 2014-06-30 | 2019-02-12 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
| TWI659448B (en) * | 2014-06-30 | 2019-05-11 | 日商東京威力科創股份有限公司 | Plasma processing device and plasma processing method |
| US10861675B2 (en) | 2014-06-30 | 2020-12-08 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
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