CN101523214A - Magnetic sensor device with pairs of detection units - Google Patents
Magnetic sensor device with pairs of detection units Download PDFInfo
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- CN101523214A CN101523214A CNA2007800378210A CN200780037821A CN101523214A CN 101523214 A CN101523214 A CN 101523214A CN A2007800378210 A CNA2007800378210 A CN A2007800378210A CN 200780037821 A CN200780037821 A CN 200780037821A CN 101523214 A CN101523214 A CN 101523214A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/12—Measuring magnetic properties of articles or specimens of solids or fluids
- G01R33/1269—Measuring magnetic properties of articles or specimens of solids or fluids of molecules labeled with magnetic beads
Abstract
The invention relates to a magnetic sensor device (100) with a primary and secondary detection unit (P, S), each of which comprises a magnetic sensor element and a magnetic field generator. In a preferred embodiment, the magnetic sensor elements are GMR elements (12, 22) with the same sensitive directions (D12, D22), and the magnetic field generators are parallel wires (11, 21) which are supplied by an evaluation and control unit (40) with anti-parallel magnetic excitation currents. The magnetic excitation currents generate magnetic excitation fields (Bn, B2i) with opposite sense of rotation which in turn induce oppositely directed magnetic reaction fields (B'11, B'21) in magnetized particles (1) provided in an investigation region (2). The magnetic reaction fields (B'11, B'21) therefore have opposite effects on the GMR elements, yielding an increase in the difference (delta) between the output signals of these elements. In a preferred embodiment, four detection units are arranged in aWheatstone bridge.
Description
Technical field
The present invention relates to a kind of magnetic sensor device that is used for the detection of magnetized particle, it comprises that the detecting unit with magnetic field generator and magnetic sensor element is right.In addition, the present invention relates to the application of this magnetic sensor device.
Background technology
From WO 2005/010543 A1 and the known a kind of magnetic sensor device of WO 2005/010542 A2, it for example can be used for the target molecule that certification mark has magnetic bead, biological example molecule in micro fluidic biosensor.This micro-sensor apparatus disposes array of detection units, and array of detection units comprises and is used to produce the lead-in wire of magnetic excitation field and is used to detect by the fixing giant magnetoresistance (GMR) of the magnetic reaction field of pearl generation of magnetization.The signal of GMR (resistance variations) is then represented near the number of the pearl the sensor.
In the time will measuring the target molecule of extremely low concentration and/or in the time will minimizing Measuring Time, for the magnetic sensor device of aforementioned type, key is to maximize signal to noise ratio (S/N ratio).Yet, in view of many different interference sources, for example power supply noise, temperature drift, common mode interference, crosstalk etc., this task is difficult.
Summary of the invention
Based on this situation, the purpose of this invention is to provide a kind of method that is used for the magnetized particles of more accurate detection survey region, wherein expectation can be made relevant magnetic sensor device and need not complicated making step.
This purpose realizes by magnetic sensor device as claimed in claim 1 and as claimed in claim 13 should being used for.Preferred embodiment is disclosed in the dependent claims.
Will main (but only not being) be used for detecting the magnetized particles of survey region according to magnetic sensor device according to the present invention, for example be used for detecting and be attached to the magnetic bead of being located at the target molecule of sample fluid in the sample chamber as label.This magnetic sensor device comprises as lower member.
A) " main detecting unit " and " inferior detecting unit ", wherein wording " master " and " inferior " just are selected for and distinguish these unit, and should not hint between them that any difference or grade must be arranged.Each comprises following parts in the main and secondary detecting unit:
A1) have " magnetic sensor element " of sensitive direction.
In context, at first note, thereby following wording and definition will be applicable to the spatial relationship between the geometric object of explanatory note description in the whole text:
-(how much) " line " ad infinitum or limitedly extend along one or two direction as the crow flies, and do not have specific orientation.
-" direction " is the line with orientation, that is, it extends to terminal point (wherein these points can be the infinite distances) from starting point.Direction can be described as vector on mathematics.Usually, direction has limited extension and is visualized as arrow.
If distance is identical each other for-two lines or direction, then be called " parallel " everywhere.
If-both direction has the orientation of same/opposite, perhaps more strictly, if dependent vector
a,
bJust have/negative scalar product
a b, then claim this both direction to be " being orientated identical "/" opposite orientation ".The parallel direction of opposite orientation is also referred to as " antiparallel " sometimes.
" sensitive direction " of magnetic sensor element refers to that then this sensor element is for the component of the magnetic vector parallel with described direction in space the most responsive (perhaps only to its sensitivity).Moreover if these components are that orientation is identical or opposite orientation with respect to this sensitive direction, it is poor then to occur.Usually, magnetic sensor element only has a single sensitive direction and insensitive substantially to the magnetic-field component vertical with this direction.
A2) " magnetic field generator " is used for producing " magnetic excitation field " in (at least a portion) survey region, and wherein, if magnetized particles is arranged in this survey region, then described magnetic excitation field can encourage " magnetic reaction field " of these particles.In addition, the described magnetic reaction field of magnetized particles should have " angle of the crossing ", and it is defined as the vector and the angle between the sensitive direction of the associated magnetic sensor element of the position of associated magnetic sensor element of reaction field.In most of the cases, magnetic reaction field parallel (and same orientation) or be antiparallel to the sensitive direction of associated magnetic sensor element means that this angle of the crossing is respectively 0 ° or 180 °.Yet generally speaking, this angle of the crossing can be the arbitrary value between 0 to 180 °.
Strict, the orientation of magnetic reaction field not only depends on applied magnetic excitation field, but also depends on the actual distribution of magnetized particles.For unique definition of the angle of the crossing, " magnetic reaction field " therefore always is meant predetermined representative orientation in the context of the present invention, for example refers to the average orientation of the magnetic reaction field of all actual capabilities.
Moreover, the parts xyz of detecting unit defined above (magnetic sensor element, sensitive direction, magnetic field generator, magnetic excitation field, magnetic reaction field, the angle of the crossing) is called " master unit xyz " or " inferior parts xyz " hereinafter sometimes, depends on that it is the member of main or inferior detecting unit." main magnetic sensor element " for example is the abbreviation of " magnetic sensor element of main detecting unit " therefore.
B) control module is controlled the magnetic field generator of main and secondary detecting unit according to (defining as mentioned) relevant mutually different mode of the angle of the crossing.
C) assessment unit is used for output signal poor of the magnetic sensor element of sensing main and secondary detecting unit.This assessment unit and control module may be embodied as and the circuit of detecting unit on same microelectronic chip, perhaps can (to small part) realize in this chip exterior.
Described magnetic sensor device is realized high signal to noise ratio (S/N ratio), because poor between two measuring-signals of evaluation unit senses, this means that the interference that influences two magnetic sensor element similarly (for example, power supply noise, temperature drift, common mode interference, crosstalk) will cancel out each other.But avoided the expectation measuring-signal promptly in the counteracting of the amplitude of the magnetic reaction field of magnetized particles underexcitation.This is because of such fact, according to feature a2), the reaction field that is energized has the different angles of the crossing in the main and secondary magnetic sensor element, and therefore produces different measurement results.
According to a preferred embodiment of the invention, the main and secondary detecting unit has identical haply design (that is, they comprise the same material/parts of same size and positioned opposite).This same configuration has guaranteed to disturb and will influence two detecting units similarly and therefore will (almost) offset fully in the difference of output signal.
Generally speaking, the main and secondary magnetic excitation field can overlap in survey region more or less.But, in a preferred embodiment, the magnetic excitation field that the main and secondary magnetic field generator is arranged such that the main and secondary magnetic field generator accounts for leading the magnetic field intensity of described partial contribution at least 70% (that is) in the different piece of this survey region.More preferably, the essentially no overlapping of the magnetic excitation field of main and secondary magnetic field generator, this has minimized the related cross-talk between the main and secondary detecting unit.
In the general situation,, also can overlap between (producing) main and secondary magnetic reaction field by magnetized particles in the position of main and/or inferior magnetic sensor element.But, preferably, the main and secondary magnetic sensor element is arranged to mainly be arrived by main or inferior magnetic reaction field respectively.Ideally, main magnetic reaction field will only arrive relevant main magnetic sensor element, and inferior magnetic reaction field will only arrive relevant inferior magnetic sensor element.In this case, the magnetic cross-talk between the main and secondary detecting unit can significantly reduce.With previous embodiment combination, that is, if the main and secondary magnetic excitation field does not overlap yet, what this had realized crosstalking certainly minimizes.
Should for example can realize by (main and/or inferior) magnetic field generator by at least one lead.In exemplary embodiments, it will extend in parallel lead-in wire by a pair of two and realize.
Should (main and/or inferior) magnetic sensor element specifically can comprise Hall element, wherein the sensitive direction of this sensor is by the direction of current decision of flowing through magnetic sensor element.Two identical parallel Hall elements for example when the antiparallel conduction of current is passed through them, will produce the signal of opposite polarity.This (main and/or inferior) magnetic sensor element also can comprise the magnetoresistive element of similar GMR (giant magnetoresistance), TMR (tunnel magnetoresistive) or AMR (anisotropic magnetoresistive) element, and wherein the sensitive direction of GMR element is for example determined by its pinning layer (pinned layer).Moreover, the additional step that for example uses the CMOS technology and be used on the cmos circuit top, realizing magnetoresistive element, this magnetic field generator and magnetic sensor element can realize becoming integrated circuit.Described integrated circuit also can comprise the control module and/or the assessment unit of this magnetic sensor device alternatively.
Though the main and secondary sensitive direction generally can be located arbitrarily in the space, but preferably, they are parallel and are orientated identical.Although adjacent GMR is made for the magnetic sensor element with anti-parallel sensitive directions known on principle (with reference to WO 2004/109725 A1), if but the magnetic sensor element on the microchip all has same sensitive direction, then more easy.Although be the identical sensitive direction of orientation,, can in the magnetic sensor device that is proposed, obtain (that is magnetic reaction field) different-effect of signal of interest by using different magnetic excitation field.
In a preferred embodiment of the invention, this control module is adapted to and supplies the opposite electric current of big or small equidirectional respectively to the main and secondary magnetic field generator.Suppose that magnetic field generator is the parallel wire on the microchip, then the electric current that this direction is opposite will produce the opposite magnetic excitation field of sense of rotation, and the result responds to the magnetic reaction field of opposite orientation in magnetized particles.Therefore these reaction fields respectively and the angle of the crossing between the main and secondary sensitive direction differ 180 °, the maximum that forms between the output signal of main and secondary magnetic sensor element is poor.
This magnetic sensor device can (and inciting somebody to action usually) comprise more than a pair of main and secondary detecting unit.In the preferred embodiment with many this magnetic sensor devices to the main and secondary detecting unit, some (alternatively, all) magnetic sensor element of detecting unit is connected to common line, for example is connected to ground.Like this, the number of interconnection can significantly reduce.
In another important embodiment of the present invention, magnetic sensor device comprises second pair of main and secondary detecting unit, and wherein the magnetic sensor element of all four detecting units connects into Wheatstone bridge.For the situation that magnetic sensor element is realized by (magnetic) resistance, Wheatstone bridge allows the very sensitive detection of any resistance variations, and the interference of similar temperature drift is simultaneously suppressed best.
In the other modified example of previous embodiment, the sensitive direction of all magnetic sensor element of Wheatstone bridge is parallel to each other and is orientated identical.Describe as preamble, this has realized the simplest making and need not additional making step.
In the modified example again of Wheatstone bridge embodiment, the angle of the crossing of two magnetic sensor element that are connected in series (definition as mentioned is between magnetic reaction field and the sensitive direction) differs about 180 °.Therefore the magnetic reaction field that acts on these magnetic sensor element has the opposite effect, for example increases the resistance of a magnetic sensor element and reduces the resistance of another magnetic sensor element.Therefore voltage between the magnetic sensor element will be offset along equidirectional by these two magnetic sensor element.Preferably, in two branches of Wheatstone bridge, realize having the proposal design of contrary sign.Voltages at nodes between two magnetic sensor element of first branch descends, and what follow is that voltages at nodes between the magnetic sensor element of another branch rises, and vice versa, obtains the maximum voltage difference between these two nodes.
The invention still further relates to aforesaid microelectronic magnetic sensor device in molecular diagnosis, biological sample analysis and/or chemical example analysis, the application during particularly micromolecule detects.Molecular diagnosis for example can be reached by means of the magnetic bead that directly or indirectly is attached to target molecule.
Description of drawings
These and other aspect of the present invention is will be with reference to following (a plurality of) embodiment obvious and set forth.These embodiment will exemplarily be described by accompanying drawing, in the accompanying drawing:
Fig. 1 schematically shows the main detecting unit and time detecting unit of magnetic sensor device of the present invention;
Fig. 2 illustrates the angle of the crossing between magnetic reaction field and the magnetic sensor element sensitive direction;
Fig. 3 schematically shows main detecting unit of two couple who is connected to full wheatstone bridge and time detecting unit;
Fig. 4 schematically shows a pair of main detecting unit and time detecting unit that is connected to half Wheatstone bridge; And
Fig. 5 illustrates the modified example of Fig. 4 embodiment, and wherein two and half Wheatstone bridges are coupled to common line.
Identical reference number is represented same or analogous parts in the accompanying drawing.
Embodiment
Fig. 1 illustrates microelectronic magnetic sensor device 100 of the present invention, and it has particular application as the biology sensor of the magnetic interactive particles (for example super paramagnetic beads 1) that is used for detecting survey region (sample chamber 2).Magneto-resistive biochips or biology sensor have the promising attribute that is used for bio-molecular diagnostics aspect susceptibility, specificity, integrated, the easy to use and cost.The example of this biochip is described in WO 2003/054566, WO 2003/054523, WO2005/010542 A2, WO 2005/010543 A1 and WO 2005/038911 A1, and it is incorporated into the application by reference.
Biology sensor usually by type shown in Figure 1 (for example, 100) array of magnetic sensor device 100 forms, and therefore can measure the concentration of the multiple different target molecule (for example protein, DNA, amino acid, drug abuse) in the solution (for example, blood or saliva) simultaneously.In the association schemes of so-called " sandwich method (sandwich assay) " a kind of may example, this realized that by mating surface 3 is provided this mating surface 3 has the combinative first antibody of target molecule.1 of the super paramagnetic beads of carrying second antibody can be attached to this combining target molecule.In order to simplify, only pearl 1 is shown among the figure.
Fig. 1 also illustrates design identical haply and " main detecting unit " P and " inferior detecting unit " S that realize in the substrate of surface under 3.Wherein each comprises master drive lead-in wire 11 and time excitation wire 21 (as magnetic field generator) and main GMR element 12 and time GMR element 22 (as magnetic sensor element) respectively for detecting unit P and S.The electric current that flows in excitation wire 11 and 21 will produce main magnetic excitation field B respectively
11With inferior magnetic excitation field B
21, these magnetize super paramagnetic beads 1 conversely.Main and secondary magnetic reaction field B ' from super paramagnetic beads 1
11, B '
21Magnetization component in the lead-in surface in GMR 12 and 22 the most respectively, this causes measurable resistance variations.
Assessment/control module 40 is also connected to parallel excitation wires 11 and 21 to be used for to its supply exciting current.These exciting currents have identical amplitude and direction opposite (that is, antiparallel), the feasible magnetic excitation field B that is produced
11And B
21Has opposite sense of rotation.As a result, the magnetic reaction field B ' of induction
11And B '
21Also has opposite sense of rotation.In the example shown, this is hinting main magnetic reaction field B '
11With main sensitive direction D
12Between angle of the crossing α
1Be 180 °, and secondary response field B '
21With inferior sensitive direction D
22Between angle of the crossing α
2It is 0 °.Along with the resistance of main GMR element 11 reduces, the resistance of inferior GMR element 22 correspondingly increases, and wherein these reverse effects add up in output difference △.
Fig. 2 comprises relevant main and secondary sensitive direction D
12And D
22And relevant main and secondary magnetic reaction field B '
11And B '
21The main sketch of general situation.Although these sensitive directions are parallel and be orientated identically in the example of Fig. 1, but they generally can have any spatial orientation.The angle of the crossing between sensitive direction and the relevant magnetic reaction field, for example main sensitive direction D
12With main magnetic reaction field B '
11Between angle of the crossing α
1So, be defined as the angle between the dependent vector.
Poor for the effect that can observe the main and secondary magnetic reaction field in the main and secondary GMR element respectively requires main crossings angle α now
1With the inferior angle of the crossing (α among Fig. 2
2) difference.Many configurations can be satisfied this condition, exception be inferior magnetic reaction field B ' shown in the figure dotted line
21Both direction; These directions are " forbidding ", because they will produce the angle of the crossing α identical with main detecting unit
2=α
1
If poor between the main and secondary angle of the crossing | α
1-α
2| be 180 ° of maximal values,, then obtain the maximum broadening of the signal that produces by main and secondary GMR element as the situation of the layout of Fig. 1.This optimization can by following the two realize (i) parallel sensitive direction and antiparallel magnetic reaction field (Fig. 1) and (ii) anti-parallel sensitive directions and parallel magnetic reaction field.Yet a kind of option in back is not suitable for owing to being difficult to produce.Moreover anti-parallel sensitive directions has such shortcoming: approximate uniform external magnetic field measurement of inductance signal in the zone of main and secondary detecting unit P, S, these measuring-signals add up in the output difference, and disappear mutually in the layout of Fig. 1.
Fig. 3 illustrates the layout according to preferred magnetic sensor device 200 of the present invention, and wherein two main detecting unit P, P ' and two detecting unit S, S ' are arranged to full wheatstone bridge.More precisely, Xiang Guan GMR element 12,22,32 and 42 is connected to full wheatstone bridge.Assessment/control module 40 can produce the voltage difference between terminal A and the B, thereby the bias current that flows through GMR element 12,22,32,42 is provided.Differential sensor output signal △ between terminal C and the D is then evaluated subsequently/and differential amplifier in the control module 40 picks up and further handles.Sensor output signal △ can be differential voltage or electric current.
Electric current is through excitation wire 11,21,31 and 41, makes local magnetic reaction field (coming from magnetic-particle) be arranged in to be parallel to the pinning layer (this situation is corresponding to GMR 12 and 42) of relevant GMR or antiparallel (GMR 22,32) with it.
Shown in the advantage of magnetic sensor device comprise:
-this device is insensitive to the common mode magnetic interference.
The dc point of-this device is insensitive to the temperature variation of GMR element 12,22,32,42.
The temperature variation of the voltage difference between-terminal A and the B, noise, broadening etc. are revealed as the common-mode signal at terminal C and D two ends, and the common mode inhibition of the differential amplifier of evaluated/control module 40 inside suppresses.
-common mode capacitance and inductive cross-talk from the excitation wire to the electric bridge also suppressed by this differential amplifier.
Fig. 4 illustrates the magnetic sensor device 300 as the adjustment example of last embodiment, wherein only realizes half Wheatstone bridge by a pair of main and secondary detecting unit P and S.Assessment/control module 40 provides exciting current to arrive excitation wire 11 and 21 equally.In addition, assessment/control module 40 provides the bias current that flows through GMR element 12,22 via terminal A that is positioned at a side and B and the terminal C that is positioned at opposite side.Obtain differential output signal △ at terminal A and B.This differential output signal can be differential voltage or electric current.
The attendant advantages of present embodiment is to compare with full wheatstone bridge, needs still less sensor element and interconnection.
Fig. 5 illustrates the magnetic sensor device 400 as the modified example of last embodiment, and it comprises having still less half Wheatstone bridge of interconnection.With Fig. 4 relatively, two (may many in) half Wheatstone bridges are provided, these half Wheatstone bridges all use common node C, for example substrate (ground connection).Like this, a plurality of sensor units are shared same terminal C, and the interconnection of this feasible assessment/control module 40 still less.
Mention, described embodiment has the advantage that the sensitive direction of all GMR elements can be identical.After the micro production of sensor device, the pinning layer of all GMR elements will have identical orientation.Therefore, if some pinning layer of two GMR elements counter-rotating (for example, GMR element 22 and 32 layer in the Wheatstone bridge of Fig. 3) then needs the post-processing step that adds.The technology that realizes this counter-rotating relates to being close to be used Hard Magnetic " seal " above the sensor surface and to its heating, programmes thereby the direction (direction of pinning layer is duplicated from this seal) of pinning layer is carried out the part again.Another kind of technology is used (with reference to WO 2004/109725 A1) based on controlled application that flows through the current impulse that is used for spot heating GMR element and external magnetic field the time.Two kinds of technology all need additional step in manufacture craft, these additional steps or relate to accurate mechanical registeration or relate to and use high electric current and relevant high voltage, and this high voltage is far above the voltage breakdown of for example standard CMOS process.In addition, the programming again to pinned-layer orientation can cause producing extra magnetic domains and become the unsettled cause of sensor (Barkhausen noise, the swollen quick-fried noise of baseline).
Although the previous embodiment of the sensitive direction of (adjacent) GMR element counter-rotating belongs to scope of the present invention, make differential sensor and need not extra processing step and sensor is not exposed to high temperature and the method in big magnetic field but preferably provide.Embodiments of the invention mentioned above have the concrete advantage that this method is provided.These embodiment are based on the proposal of magnetic excitation field direction in the counter-rotating sensor fragment, rather than the counter-rotating pinned-layer orientation.For example this can realize by the counter-rotating of exciting current, and the effect of exciting current counter-rotating is that relevant GMR element shows the response opposite with magnetic-particle.Therefore can set up the operation of fully differential sensor.
Point out that at last in this application, wording " comprises " not getting rid of and exist other elements or step, " one " or " one " not to get rid of to exist a plurality of that and the function of some devices can be realized in single processor or other unit.The invention reside in each and each combination of each and each novel property feature and property feature.In addition, any reference symbol in the claim should not be read as its scope that limits.
Claims (13)
1. magnetic sensor device (100,200,300,400) that is used for detecting the magnetized particles (1) of survey region (2) comprising:
A) main detecting unit (P, P ') and time detecting unit (S, S '), each described main detecting unit and time detecting unit include:
A1) has sensitive direction (D
12, D
22) magnetic sensor element (12,22,32,42);
A2) magnetic field generator (11,21,31,41), be used for described survey region (2) generation can encourage magnetized particles (1) magnetic reaction field (B '
11, B '
21) magnetic excitation field (B
11, B
21), wherein said reaction field has the sensitive direction (D with described magnetic sensor element in associated magnetic sensor element (12,22,32,42)
12, D
22) the angle of the crossing (α
1, α
2);
B) control module (40) is used for according to the relevant angle of the crossing (α
1, α
2) mutually different mode controls the magnetic field generator (11,21,31,41) of main and secondary detecting unit (P, P ', S, S ');
C) assessment unit (40) is used for poor (Δ) of output signal of the magnetic sensor element (12,22,32,42) of sensing main and secondary detecting unit (P, P ', S, S ').
2. magnetic sensor device as claimed in claim 1 (100,200,300,400),
It is characterized in that described main detecting unit (P, P ') and described detecting unit (S, S ') have identical design.
3. magnetic sensor device as claimed in claim 1 (100,200,300,400),
It is characterized in that described magnetic field generator (11,21,31,41) is arranged such that the magnetic excitation field (B of described magnetic field generator
11, B
21) account for leading in the different piece of described survey region (2).
4. magnetic sensor device as claimed in claim 1 (100,200,300,400),
It is characterized in that, described magnetic sensor element (12,22,32,42) be arranged such that described magnetic sensor element mainly by the magnetic reaction field of coherent detection unit (P, P ', S, S ') (B '
11, B '
21) arrive.
5. magnetic sensor device as claimed in claim 1 (100,200,300,400),
It is characterized in that at least one magnetic field generator comprises at least one lead (11,21,31,41) in the described magnetic field generator.
6. magnetic sensor device as claimed in claim 1 (100,200,300,400),
It is characterized in that at least one magnetic sensor element comprises the magnetoresistive element of Hall element or similar GMR (12,22,32,42), AMR or TMR element in the described magnetic sensor element.
7. magnetic sensor device as claimed in claim 1 (100,200,300,400),
It is characterized in that the sensitive direction (D of described detecting unit (P, P ', S, S ')
12, D
22) parallel and be orientated identical.
8. magnetic sensor device as claimed in claim 1 (100,200,300,400),
It is characterized in that described control module (40) is adapted to the opposite electric current of the big or small equidirectional of supply to described magnetic field generator (11,21,31,41).
9. magnetic sensor device as claimed in claim 1 (400),
It is characterized in that described magnetic sensor device comprises many to the main and secondary detecting unit, the magnetic sensor element of wherein said detecting unit is connected to common line (C).
10. magnetic sensor device as claimed in claim 1 (200),
It is characterized in that described magnetic sensor device comprises second pair of main and secondary detecting unit (P ', S '), wherein the magnetic sensor element (12,22,32,42) of four detecting units (P, P ', S, S ') connects into Wheatstone bridge.
11. magnetic sensor device as claimed in claim 10 (200),
It is characterized in that the sensitive direction of all magnetic sensor element (12,22,32,42) is parallel to each other and is orientated identical.
12. magnetic sensor device as claimed in claim 10 (200),
It is characterized in that the magnetic sensor element (12,32 that is connected in series; 22,42) angle of the crossing in differs about 180 °.
13. magnetic sensor device as claimed in claim 1 is in molecular diagnosis, biological sample analysis and/or chemical example analysis, the application during particularly micromolecule detects.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP06121980.4 | 2006-10-09 | ||
| EP06121980 | 2006-10-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101523214A true CN101523214A (en) | 2009-09-02 |
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ID=39283255
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007800378210A Pending CN101523214A (en) | 2006-10-09 | 2007-09-28 | Magnetic sensor device with pairs of detection units |
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| Country | Link |
|---|---|
| EP (1) | EP2082231A2 (en) |
| JP (1) | JP2010521649A (en) |
| CN (1) | CN101523214A (en) |
| WO (1) | WO2008044162A2 (en) |
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| CN102073023A (en) * | 2009-11-19 | 2011-05-25 | Nxp股份有限公司 | Magnetic field sensor |
| CN103069282A (en) * | 2010-08-23 | 2013-04-24 | 阿尔卑斯绿色器件株式会社 | Magnetic-balance current sensor |
| CN105574982A (en) * | 2016-01-12 | 2016-05-11 | 深圳粤宝电子科技有限公司 | Magnetism reading device for coil magnetic core full bridge structure |
| US10725126B2 (en) | 2016-09-05 | 2020-07-28 | Industrial Technology Research Institute | Biomolecule magnetic sensor |
| CN112345624A (en) * | 2020-10-27 | 2021-02-09 | 北京信息科技大学 | High-sensitivity metal wear particle detection sensor based on giant magnetoresistance effect |
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| CN102470373B (en) | 2009-07-17 | 2014-11-26 | 皇家飞利浦电子股份有限公司 | Apparatus for the enrichment of magnetic particles |
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| JP6285641B2 (en) * | 2013-05-10 | 2018-02-28 | 旭化成エレクトロニクス株式会社 | Magnetic sensor and magnetic field component calculation method |
| CN112650406A (en) * | 2019-10-10 | 2021-04-13 | 北京小米移动软件有限公司 | Electronic device and electronic device protection system |
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| KR20040075011A (en) * | 2001-12-21 | 2004-08-26 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | Magnetoresistive sensing device, system and method for determining a density of magnetic particles in fluid |
| US7048890B2 (en) * | 2001-12-21 | 2006-05-23 | Koninklijke Philips Electronics N.V. | Sensor and method for measuring the areal density of magnetic nanoparticles on a micro-array |
| US20060194327A1 (en) | 2003-07-30 | 2006-08-31 | Koninklijke Philips Electronics N.V. | On-chip magnetic particle sensor with improved snr |
| US20080309329A1 (en) | 2003-07-30 | 2008-12-18 | Koninklike Philips Electronics N.V. | On-Chip Magnetic Sensor Device with Suppressed Cross-Talk |
| CN1829908B (en) * | 2003-07-30 | 2010-04-28 | 皇家飞利浦电子股份有限公司 | Circuit, bio-chip and method for removing noise of a magneto-resistive nano-particle sensor |
| WO2005111596A1 (en) * | 2004-05-18 | 2005-11-24 | Koninklijke Philips Electronics N.V. | Magnetic rotation to improve signal-over-background in biosensing |
| EP1754063A1 (en) | 2004-05-24 | 2007-02-21 | Koninklijke Philips Electronics N.V. | Magneto-resistive sensor for high sensitivity depth probing |
| WO2006018811A1 (en) * | 2004-08-20 | 2006-02-23 | Instituto De Engenharia De Sistemas E Computadores Para Os Microsistemas E As Nanotecnologias (Inesc-Mn) | A bio-electronic device |
| EP2018560A2 (en) * | 2006-05-09 | 2009-01-28 | Koninklijke Philips Electronics N.V. | Microelectronic sensor device for concentration measurements |
| CN101443674A (en) * | 2006-05-10 | 2009-05-27 | 皇家飞利浦电子股份有限公司 | System and methods for actuation on magnetoresistive sensors |
| US8133439B2 (en) * | 2006-08-01 | 2012-03-13 | Magic Technologies, Inc. | GMR biosensor with enhanced sensitivity |
| CN101501486A (en) * | 2006-08-09 | 2009-08-05 | 皇家飞利浦电子股份有限公司 | Magnetic sensor device on a microchip |
-
2007
- 2007-09-28 JP JP2009530982A patent/JP2010521649A/en not_active Withdrawn
- 2007-09-28 EP EP07826574A patent/EP2082231A2/en not_active Withdrawn
- 2007-09-28 CN CNA2007800378210A patent/CN101523214A/en active Pending
- 2007-09-28 WO PCT/IB2007/053944 patent/WO2008044162A2/en active Application Filing
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102073023A (en) * | 2009-11-19 | 2011-05-25 | Nxp股份有限公司 | Magnetic field sensor |
| US8587299B2 (en) | 2009-11-19 | 2013-11-19 | Nxp B.V. | Magnetic field sensor |
| CN103069282A (en) * | 2010-08-23 | 2013-04-24 | 阿尔卑斯绿色器件株式会社 | Magnetic-balance current sensor |
| CN103069282B (en) * | 2010-08-23 | 2015-06-03 | 阿尔卑斯绿色器件株式会社 | Magnetic-balance current sensor |
| CN105574982A (en) * | 2016-01-12 | 2016-05-11 | 深圳粤宝电子科技有限公司 | Magnetism reading device for coil magnetic core full bridge structure |
| US10725126B2 (en) | 2016-09-05 | 2020-07-28 | Industrial Technology Research Institute | Biomolecule magnetic sensor |
| CN112345624A (en) * | 2020-10-27 | 2021-02-09 | 北京信息科技大学 | High-sensitivity metal wear particle detection sensor based on giant magnetoresistance effect |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010521649A (en) | 2010-06-24 |
| EP2082231A2 (en) | 2009-07-29 |
| WO2008044162A3 (en) | 2008-07-17 |
| WO2008044162A2 (en) | 2008-04-17 |
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